Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

Abstract

We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.