发布求助
文献互助 智能选刊 最新文献

2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

筛选
英文 中文
Monolithic InP receiver chip with a 90° hybrid and a variable optical attenuator for 100GBit/s colourless WDM detection 具有90°混合和可变光衰减器的单片InP接收器芯片，用于100GBit/s无色WDM检测
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562574
P. Runge, S. Schubert, A. Seeger, T. Gartner, K. Janiak, J. Stephan, D. Trommer, M. Nielsen
{"title":"Monolithic InP receiver chip with a 90° hybrid and a variable optical attenuator for 100GBit/s colourless WDM detection","authors":"P. Runge, S. Schubert, A. Seeger, T. Gartner, K. Janiak, J. Stephan, D. Trommer, M. Nielsen","doi":"10.1109/ICIPRM.2013.6562574","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562574","url":null,"abstract":"We demonstrate a monolithically integrated quadrature coherent receiver photonic integrated circuit (PIC) on an InP substrate with a 90° optical hybrid, a variable optical attenuator (VOA) and four pin-photodetectors. With an attenuation of more than 20dB the VOA enables the usage of the receiver PIC for colourless WDM detection.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122822006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode 降低高速InGaAs/InAlAs雪崩光电二极管起始增益的研究
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562572
M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki
{"title":"Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode","authors":"M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki","doi":"10.1109/ICIPRM.2013.6562572","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562572","url":null,"abstract":"We investigate a novel InAlAs avalanche photodiode with double p-field control layers, which effectively eliminates the potential barrier between InGaAs absorption and InAlAs avalanche layers. The fabricated APD exhibits a low onset gain required for future optical fiber communications systems. A large 3-dB bandwidth of 22 GHz is maintained with a low gain of 2.8 for an APD with 100-nm avalanche-layer, and a GB product of 235 GHz is also achieved.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132721406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel planar structure single-RF drive MZ optical modulator on InP(110) substrate 基于InP(110)衬底的新型平面结构单射频驱动MZ光调制器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562569
Y. Ogiso, M. Arai, E. Yamada, H. Tanobe, Y. Shibata, M. Kohtoku
{"title":"Novel planar structure single-RF drive MZ optical modulator on InP(110) substrate","authors":"Y. Ogiso, M. Arai, E. Yamada, H. Tanobe, Y. Shibata, M. Kohtoku","doi":"10.1109/ICIPRM.2013.6562569","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562569","url":null,"abstract":"A MZ optical modulator (MZM) with a novel planar structure was proposed. A single-RF drive push-pull MZM with a simple coplanar waveguide (CPW) was fabricated by utilizing a (110)-oriented InP substrate in terms of the crystallographic orientation dependence of the electro-optic Pockels effect. The device exhibits a 3 dB-EO bandwidth of 30 GHz and 40 Gb/s NRZ high speed modulation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131771694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room-temperature continuous-wave operation of lateral current injection membrane laser 侧向电流注入膜激光器的室温连续波工作
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562637
K. Doi, T. Shindo, M. Futami, Jieun Lee, T. Hiratani, D. Inoue, Shu Yang, T. Amemiya, N. Nishiyama, S. Arai
{"title":"Room-temperature continuous-wave operation of lateral current injection membrane laser","authors":"K. Doi, T. Shindo, M. Futami, Jieun Lee, T. Hiratani, D. Inoue, Shu Yang, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562637","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562637","url":null,"abstract":"Toward realization of an ultralow-power-consumption semiconductor light source for optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane Fabry-Perot (FP) laser with 220 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 3.5 mA for the cavity length of 700 μm and the stripe width of 1.0 μm, which is almost the same as the theoretical value.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131902523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures MOCVD生长gaas和inp基可调谐VCSEL结构的原位表征
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562579
C. Grasse, Y. Tomita, P. Wiecha, R. Meyer, T. Grundl
{"title":"In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures","authors":"C. Grasse, Y. Tomita, P. Wiecha, R. Meyer, T. Grundl","doi":"10.1109/ICIPRM.2013.6562579","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562579","url":null,"abstract":"In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123516052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
From surface dimer orientations to bonds at the GaP/Si(100) heterointerface 从表面二聚体取向到GaP/Si(100)异质界面上的键
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562578
O. Supplie, S. Bruckner, H. Doscher, P. Kleinschmidt, T. Hannappel
{"title":"From surface dimer orientations to bonds at the GaP/Si(100) heterointerface","authors":"O. Supplie, S. Bruckner, H. Doscher, P. Kleinschmidt, T. Hannappel","doi":"10.1109/ICIPRM.2013.6562578","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562578","url":null,"abstract":"Despite intense research in III-V-on-silicon-heteroepitaxy since the 1980ies, ultra-high efficiency opto-electronic devices are yet to be realized. Pseudomorphic growth of GaP films on Si(100) is an adequate model system to study the polar-on-non-polar heterointerface which still is a major source of defects. Generally, in situ control of growth processes is vital in order to understand and, finally, avoid defect formation. While metalorganic vapor phase epitaxy is of big interest regarding device production at large scale, the existence of a process gas limits in situ access to electron-based surface science techniques. Reflection anisotropy spectroscopy (RAS), however, is applicable in vapor phase. Dimerized (100) surfaces of cubic crystals usually exhibit characteristic RA spectra, as known for both monohydride-terminated Si(100) and for P-rich GaP(100). Rotation of an anisotropic structure by 90° flips the sign of its RA spectrum so that dimer orientations are controllable in situ during surface preparation. This is essential, in particular, directly before III-V nucleation since process parameters strongly affect the surface formation. Moreover, the polarity of the GaP film determines the orientation of the P-dimers at the Prich GaP/Si(100) surface. Knowing both the polarity of the GaP film and the dimer orientation at the Si(100) substrate prior to nucleation, a simplistic model published by Beyer et al. allows to estimate whether Si-Ga or Si-P bonds are preferred at the heterointerface. Our findings are in favor of Si-P bonds which we demonstrate here for both preferentially A-type and B-type Si(100) 2° substrates.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127081235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High growth rate Gallium Phosphide for red LEDs 用于红色led的高生长速率磷化镓
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562611
S. Farrell, C. Ebert, D. Dyer
{"title":"High growth rate Gallium Phosphide for red LEDs","authors":"S. Farrell, C. Ebert, D. Dyer","doi":"10.1109/ICIPRM.2013.6562611","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562611","url":null,"abstract":"Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129934362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly non-linear phenomena and coherent effects in 1500 nm QD lasers and amplifiers 1500 nm量子点激光器和放大器中的高度非线性现象和相干效应
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562575
G. Eisenstein, A. Capua, O. Karni, J. Reithmaier
{"title":"Highly non-linear phenomena and coherent effects in 1500 nm QD lasers and amplifiers","authors":"G. Eisenstein, A. Capua, O. Karni, J. Reithmaier","doi":"10.1109/ICIPRM.2013.6562575","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562575","url":null,"abstract":"We present dynamical properties of quantum dot lasers and amplifiers operating under extreme nonlinear conditions. Several unique phenomena including coherent quantum interactions are demonstrated.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131556630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate 在Si衬底上采用n-InP源的50nm以下InGaAs MOSFET
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562631
Atsushi Kato, T. Kanazawa, Eiji Uehara, Y. Yonai, Y. Miyamoto
{"title":"Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","authors":"Atsushi Kato, T. Kanazawa, Eiji Uehara, Y. Yonai, Y. Miyamoto","doi":"10.1109/ICIPRM.2013.6562631","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562631","url":null,"abstract":"We demonstrated a sub-50-nm InGaAs 5-nm/InP 5-nm MOSFET with an n-InP source on a Si substrate using a 5-nm Al<sub>2</sub>O<sub>3</sub> dielectric. In the measurement of the fabricated device, the maximum drain current and the peak transconductance at V<sub>D</sub> = 0.5 V were 0.9 mA/μm and 0.8 mS/m, respectively. The threshold voltage was 0.09 V, and the drain-induced barrier lowering was 378 mV/V. From the channel length dependence, clear suppression of the short channel effect by the 5-nm-thick Al<sub>2</sub>O<sub>3</sub> gate dielectric and the extremely thin body III-V-OI structure was confirmed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130504227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT 低温超低噪声放大- InP PHEMT与GaAs MHEMT
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562600
J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn
{"title":"Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT","authors":"J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn","doi":"10.1109/ICIPRM.2013.6562600","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562600","url":null,"abstract":"We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信