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2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode 降低高速InGaAs/InAlAs雪崩光电二极管起始增益的研究
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562572
M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki
{"title":"Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode","authors":"M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki","doi":"10.1109/ICIPRM.2013.6562572","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562572","url":null,"abstract":"We investigate a novel InAlAs avalanche photodiode with double p-field control layers, which effectively eliminates the potential barrier between InGaAs absorption and InAlAs avalanche layers. The fabricated APD exhibits a low onset gain required for future optical fiber communications systems. A large 3-dB bandwidth of 22 GHz is maintained with a low gain of 2.8 for an APD with 100-nm avalanche-layer, and a GB product of 235 GHz is also achieved.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"47 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132721406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel planar structure single-RF drive MZ optical modulator on InP(110) substrate 基于InP(110)衬底的新型平面结构单射频驱动MZ光调制器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562569
Y. Ogiso, M. Arai, E. Yamada, H. Tanobe, Y. Shibata, M. Kohtoku
{"title":"Novel planar structure single-RF drive MZ optical modulator on InP(110) substrate","authors":"Y. Ogiso, M. Arai, E. Yamada, H. Tanobe, Y. Shibata, M. Kohtoku","doi":"10.1109/ICIPRM.2013.6562569","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562569","url":null,"abstract":"A MZ optical modulator (MZM) with a novel planar structure was proposed. A single-RF drive push-pull MZM with a simple coplanar waveguide (CPW) was fabricated by utilizing a (110)-oriented InP substrate in terms of the crystallographic orientation dependence of the electro-optic Pockels effect. The device exhibits a 3 dB-EO bandwidth of 30 GHz and 40 Gb/s NRZ high speed modulation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131771694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low power consumption operation of light sources for inter-chip optical interconnects 芯片间光互连光源的低功耗操作
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562593
N. Hatori, Takanori Shimizu, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, Y. Urino, M. Mori, Takahiro Nakamura, Y. Arakawa
{"title":"Low power consumption operation of light sources for inter-chip optical interconnects","authors":"N. Hatori, Takanori Shimizu, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, Y. Urino, M. Mori, Takahiro Nakamura, Y. Arakawa","doi":"10.1109/ICIPRM.2013.6562593","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562593","url":null,"abstract":"In this work, we present a multi-channel configuration for the low power consumption operation of light sources on a silicon substrate in a photonics-electronics convergence system. We simulated the power consumed by the entire system with a focus on the characteristics of a laser diode used as a light source and the total loss of the system. Simulation results showed that lower power consumption per channel can be achieved with a single-LD multi-channel branching configuration. We found that using a hybrid integrated light source on a Si substrate with this branching configuration is suitable for photonics-electronics convergence systems.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130858846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency-resolved optical gating measurements of sub-ps pulses from InAs/InP quantum dash based mode-locked lasers 基于InAs/InP量子脉冲锁模激光器的次ps脉冲的频率分辨光学门控测量
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562616
C. Calò, H. Schmeckebier, K. Merghem, R. Rosales, F. Lelarge, A. Martinez, D. Bimberg, A. Ramdane
{"title":"Frequency-resolved optical gating measurements of sub-ps pulses from InAs/InP quantum dash based mode-locked lasers","authors":"C. Calò, H. Schmeckebier, K. Merghem, R. Rosales, F. Lelarge, A. Martinez, D. Bimberg, A. Ramdane","doi":"10.1109/ICIPRM.2013.6562616","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562616","url":null,"abstract":"Mode-locking of single-section Fabry-Pérot lasers based on InAs/InP quantum dashes is studied by second-harmonic generation frequency-resolved optical gating (SHG-FROG). The devices take advantage of an optimized epitaxial structure with modal gain of 50 cm-1 showing a broad and flat emission spectrum of width in excess of 14 nm. Self-starting pulses of a width down to 430 fs are observed after intracavity dispersion compensation using single-mode fiber (SMF).","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125760284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate 在Si衬底上采用n-InP源的50nm以下InGaAs MOSFET
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562631
Atsushi Kato, T. Kanazawa, Eiji Uehara, Y. Yonai, Y. Miyamoto
{"title":"Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","authors":"Atsushi Kato, T. Kanazawa, Eiji Uehara, Y. Yonai, Y. Miyamoto","doi":"10.1109/ICIPRM.2013.6562631","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562631","url":null,"abstract":"We demonstrated a sub-50-nm InGaAs 5-nm/InP 5-nm MOSFET with an n-InP source on a Si substrate using a 5-nm Al<sub>2</sub>O<sub>3</sub> dielectric. In the measurement of the fabricated device, the maximum drain current and the peak transconductance at V<sub>D</sub> = 0.5 V were 0.9 mA/μm and 0.8 mS/m, respectively. The threshold voltage was 0.09 V, and the drain-induced barrier lowering was 378 mV/V. From the channel length dependence, clear suppression of the short channel effect by the 5-nm-thick Al<sub>2</sub>O<sub>3</sub> gate dielectric and the extremely thin body III-V-OI structure was confirmed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130504227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures MOCVD生长gaas和inp基可调谐VCSEL结构的原位表征
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562579
C. Grasse, Y. Tomita, P. Wiecha, R. Meyer, T. Grundl
{"title":"In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures","authors":"C. Grasse, Y. Tomita, P. Wiecha, R. Meyer, T. Grundl","doi":"10.1109/ICIPRM.2013.6562579","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562579","url":null,"abstract":"In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123516052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
From surface dimer orientations to bonds at the GaP/Si(100) heterointerface 从表面二聚体取向到GaP/Si(100)异质界面上的键
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562578
O. Supplie, S. Bruckner, H. Doscher, P. Kleinschmidt, T. Hannappel
{"title":"From surface dimer orientations to bonds at the GaP/Si(100) heterointerface","authors":"O. Supplie, S. Bruckner, H. Doscher, P. Kleinschmidt, T. Hannappel","doi":"10.1109/ICIPRM.2013.6562578","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562578","url":null,"abstract":"Despite intense research in III-V-on-silicon-heteroepitaxy since the 1980ies, ultra-high efficiency opto-electronic devices are yet to be realized. Pseudomorphic growth of GaP films on Si(100) is an adequate model system to study the polar-on-non-polar heterointerface which still is a major source of defects. Generally, in situ control of growth processes is vital in order to understand and, finally, avoid defect formation. While metalorganic vapor phase epitaxy is of big interest regarding device production at large scale, the existence of a process gas limits in situ access to electron-based surface science techniques. Reflection anisotropy spectroscopy (RAS), however, is applicable in vapor phase. Dimerized (100) surfaces of cubic crystals usually exhibit characteristic RA spectra, as known for both monohydride-terminated Si(100) and for P-rich GaP(100). Rotation of an anisotropic structure by 90° flips the sign of its RA spectrum so that dimer orientations are controllable in situ during surface preparation. This is essential, in particular, directly before III-V nucleation since process parameters strongly affect the surface formation. Moreover, the polarity of the GaP film determines the orientation of the P-dimers at the Prich GaP/Si(100) surface. Knowing both the polarity of the GaP film and the dimer orientation at the Si(100) substrate prior to nucleation, a simplistic model published by Beyer et al. allows to estimate whether Si-Ga or Si-P bonds are preferred at the heterointerface. Our findings are in favor of Si-P bonds which we demonstrate here for both preferentially A-type and B-type Si(100) 2° substrates.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127081235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly non-linear phenomena and coherent effects in 1500 nm QD lasers and amplifiers 1500 nm量子点激光器和放大器中的高度非线性现象和相干效应
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562575
G. Eisenstein, A. Capua, O. Karni, J. Reithmaier
{"title":"Highly non-linear phenomena and coherent effects in 1500 nm QD lasers and amplifiers","authors":"G. Eisenstein, A. Capua, O. Karni, J. Reithmaier","doi":"10.1109/ICIPRM.2013.6562575","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562575","url":null,"abstract":"We present dynamical properties of quantum dot lasers and amplifiers operating under extreme nonlinear conditions. Several unique phenomena including coherent quantum interactions are demonstrated.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131556630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High growth rate Gallium Phosphide for red LEDs 用于红色led的高生长速率磷化镓
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562611
S. Farrell, C. Ebert, D. Dyer
{"title":"High growth rate Gallium Phosphide for red LEDs","authors":"S. Farrell, C. Ebert, D. Dyer","doi":"10.1109/ICIPRM.2013.6562611","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562611","url":null,"abstract":"Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129934362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique 用SiO2溅射和退火技术制备InP (311)B衬底上高度堆叠的InAs/InGaAlAs量子点
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562629
A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka
{"title":"Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique","authors":"A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2013.6562629","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562629","url":null,"abstract":"We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131371126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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