Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka
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引用次数: 2

Abstract

We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.
用SiO2溅射和退火技术制备InP (311)B衬底上高度堆叠的InAs/InGaAlAs量子点
我们研究了在InP (311)B衬底上生长的高度堆叠的InAs/InGaAlAs量子点,采用SiO2溅射和低温650℃退火技术,发现了大约60 nm的大PL光谱蓝移。这一结果表明,低温混合技术很容易形成具有高堆叠量子点结构的单片集成电路。
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