用于红色led的高生长速率磷化镓

S. Farrell, C. Ebert, D. Dyer
{"title":"用于红色led的高生长速率磷化镓","authors":"S. Farrell, C. Ebert, D. Dyer","doi":"10.1109/ICIPRM.2013.6562611","DOIUrl":null,"url":null,"abstract":"Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High growth rate Gallium Phosphide for red LEDs\",\"authors\":\"S. Farrell, C. Ebert, D. Dyer\",\"doi\":\"10.1109/ICIPRM.2013.6562611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

实现了MOCVD生长的磷化镓每小时高达17微米的生长速率,并分析了材料的掺杂特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High growth rate Gallium Phosphide for red LEDs
Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.
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