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2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators 毫米波InGaAs MOSFET/RTD小波发生器的频率调制
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562644
M. Egard, M. Arlelid, L. Ohlsson, B. Borg, E. Lind, L. Wernersson
{"title":"Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators","authors":"M. Egard, M. Arlelid, L. Ohlsson, B. Borg, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2013.6562644","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562644","url":null,"abstract":"Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124076976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate 直接键合InP/Si衬底上InAs/InP量子点的MOVPE生长
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562577
Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura
{"title":"MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate","authors":"Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562577","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562577","url":null,"abstract":"InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131558768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reshaping the optical properties of quantum dots via strain and electric fields 通过应变和电场重塑量子点的光学特性
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562563
A. Rastelli, R. Trotta, E. Zallo, P. Atkinson, O. Schmidt
{"title":"Reshaping the optical properties of quantum dots via strain and electric fields","authors":"A. Rastelli, R. Trotta, E. Zallo, P. Atkinson, O. Schmidt","doi":"10.1109/ICIPRM.2013.6562563","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562563","url":null,"abstract":"We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows us on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements for their use in quantum optics experiments and possibly future devices for quantum communication.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134042324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The measurement of dislocation on InP wafers InP晶圆位错的测量
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562582
Qi-jian Huang, Zhiguo Liu, R. Yang, Xiaolan Li, Qiang Wang, Xiuwei Tian, Jianye Yang, Shuai Li
{"title":"The measurement of dislocation on InP wafers","authors":"Qi-jian Huang, Zhiguo Liu, R. Yang, Xiaolan Li, Qiang Wang, Xiuwei Tian, Jianye Yang, Shuai Li","doi":"10.1109/ICIPRM.2013.6562582","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562582","url":null,"abstract":"We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133948773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f-noise in vertical InAs nanowire transistors 垂直InAs纳米线晶体管的1/f噪声
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562634
Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson
{"title":"1/f-noise in vertical InAs nanowire transistors","authors":"Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2013.6562634","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562634","url":null,"abstract":"The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132225459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs 基于双光栅栅极inp - hemt的超高灵敏度太赫兹探测器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562642
Y. Kurita, Kengo Kobayashi, T. Otsuji, G. Ducournau, Y. Meziani, V. Popov, W. Knap
{"title":"Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs","authors":"Y. Kurita, Kengo Kobayashi, T. Otsuji, G. Ducournau, Y. Meziani, V. Popov, W. Knap","doi":"10.1109/ICIPRM.2013.6562642","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562642","url":null,"abstract":"We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116741545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy 金属有机气相外延在钌掺杂InP中的退火扩散
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562581
H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi
{"title":"Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy","authors":"H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi","doi":"10.1109/ICIPRM.2013.6562581","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562581","url":null,"abstract":"Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128914318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate 在(113)B InP衬底上生长的InAs/InP量子点锁模激光器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562595
K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane
{"title":"InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate","authors":"K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane","doi":"10.1109/ICIPRM.2013.6562595","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562595","url":null,"abstract":"We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123288551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monolithic InP receiver chip with a 90° hybrid and a variable optical attenuator for 100GBit/s colourless WDM detection 具有90°混合和可变光衰减器的单片InP接收器芯片，用于100GBit/s无色WDM检测
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562574
P. Runge, S. Schubert, A. Seeger, T. Gartner, K. Janiak, J. Stephan, D. Trommer, M. Nielsen
{"title":"Monolithic InP receiver chip with a 90° hybrid and a variable optical attenuator for 100GBit/s colourless WDM detection","authors":"P. Runge, S. Schubert, A. Seeger, T. Gartner, K. Janiak, J. Stephan, D. Trommer, M. Nielsen","doi":"10.1109/ICIPRM.2013.6562574","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562574","url":null,"abstract":"We demonstrate a monolithically integrated quadrature coherent receiver photonic integrated circuit (PIC) on an InP substrate with a 90° optical hybrid, a variable optical attenuator (VOA) and four pin-photodetectors. With an attenuation of more than 20dB the VOA enables the usage of the receiver PIC for colourless WDM detection.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122822006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Room-temperature continuous-wave operation of lateral current injection membrane laser 侧向电流注入膜激光器的室温连续波工作
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562637
K. Doi, T. Shindo, M. Futami, Jieun Lee, T. Hiratani, D. Inoue, Shu Yang, T. Amemiya, N. Nishiyama, S. Arai
{"title":"Room-temperature continuous-wave operation of lateral current injection membrane laser","authors":"K. Doi, T. Shindo, M. Futami, Jieun Lee, T. Hiratani, D. Inoue, Shu Yang, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562637","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562637","url":null,"abstract":"Toward realization of an ultralow-power-consumption semiconductor light source for optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane Fabry-Perot (FP) laser with 220 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 3.5 mA for the cavity length of 700 μm and the stripe width of 1.0 μm, which is almost the same as the theoretical value.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131902523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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