Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562642

Y. Kurita, Kengo Kobayashi, T. Otsuji, G. Ducournau, Y. Meziani, V. Popov, W. Knap

引用次数: 1

Abstract

We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.

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基于双光栅栅极inp - hemt的超高灵敏度太赫兹探测器

我们报道了一种超高灵敏度的太赫兹(THz)探测器，该探测器基于我们原始的非对称双光栅栅极高电子迁移率晶体管(A-DGG hemt)，采用InAlAs/InGaAs/InP材料系统设计和制造。得到的响应度在200ghz时为22.7 kV/W。据我们所知，该值是在室温下该频率范围内报告的记录响应性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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