Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura
{"title":"直接键合InP/Si衬底上InAs/InP量子点的MOVPE生长","authors":"Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562577","DOIUrl":null,"url":null,"abstract":"InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate\",\"authors\":\"Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura\",\"doi\":\"10.1109/ICIPRM.2013.6562577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate
InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.
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