在(113)B InP衬底上生长的InAs/InP量子点锁模激光器

K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane
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引用次数: 1

摘要

本文首次报道了基于(113)B InP衬底上生长的InAs量子点的单节Fabry-Perot (FP)激光器的被动锁模。正在研究的器件是一个1和2毫米长的激光二极管,发光约1.58 μm。通过适当长度的单模光纤进行腔内色散补偿后,可以观察到重复频率约为39 GHz和23 GHz,脉冲宽度低至1.5 ps的自启动脉冲。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate
We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
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