垂直InAs纳米线晶体管的1/f噪声

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562634

Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson

{"title":"垂直InAs纳米线晶体管的1/f噪声","authors":"Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2013.6562634","DOIUrl":null,"url":null,"abstract":"The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1/f-noise in vertical InAs nanowire transistors\",\"authors\":\"Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson\",\"doi\":\"10.1109/ICIPRM.2013.6562634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

高k界面的材料质量是FET器件的主要关注点。研究了对两种InAs纳米线(NW)晶体管的影响，并比较了其特性。研究发现，通过在高κ界面引入Al2O3内层，每单位栅极面积栅极电压噪声谱密度SVg的低频噪声(LFN)性能提高了一个数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

1/f-noise in vertical InAs nanowire transistors

The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量