InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane
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引用次数: 1

Abstract

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
在(113)B InP衬底上生长的InAs/InP量子点锁模激光器
本文首次报道了基于(113)B InP衬底上生长的InAs量子点的单节Fabry-Perot (FP)激光器的被动锁模。正在研究的器件是一个1和2毫米长的激光二极管,发光约1.58 μm。通过适当长度的单模光纤进行腔内色散补偿后,可以观察到重复频率约为39 GHz和23 GHz,脉冲宽度低至1.5 ps的自启动脉冲。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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