MOCVD生长gaas和inp基可调谐VCSEL结构的原位表征

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562579

C. Grasse, Y. Tomita, P. Wiecha, R. Meyer, T. Grundl

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引用次数: 1

摘要

介绍了对InP和GaAs基材料的厚度和质量等生长参数的原位监测。这是制造vcsel等光电器件的关键技术。

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In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

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来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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