用SiO2溅射和退火技术制备InP (311)B衬底上高度堆叠的InAs/InGaAlAs量子点

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562629

A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka

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引用次数: 2

摘要

我们研究了在InP (311)B衬底上生长的高度堆叠的InAs/InGaAlAs量子点，采用SiO2溅射和低温650℃退火技术，发现了大约60 nm的大PL光谱蓝移。这一结果表明，低温混合技术很容易形成具有高堆叠量子点结构的单片集成电路。

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Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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