降低高速InGaAs/InAlAs雪崩光电二极管起始增益的研究

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562572

M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki

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引用次数: 1

摘要

我们研究了一种具有双p场控制层的新型InAlAs雪崩光电二极管，它有效地消除了InGaAs吸收层和InAlAs雪崩层之间的势垒。制备的APD具有未来光纤通信系统所需的低起始增益。对于具有100 nm雪崩层的APD，以2.8的低增益保持了22 GHz的大3db带宽，并实现了235 GHz的GB产品。

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Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode

We investigate a novel InAlAs avalanche photodiode with double p-field control layers, which effectively eliminates the potential barrier between InGaAs absorption and InAlAs avalanche layers. The fabricated APD exhibits a low onset gain required for future optical fiber communications systems. A large 3-dB bandwidth of 22 GHz is maintained with a low gain of 2.8 for an APD with 100-nm avalanche-layer, and a GB product of 235 GHz is also achieved.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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