InGaAs-OI mosfet沟道厚度波动散射分析

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562632

S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi

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引用次数: 0

摘要

分析了通道厚度波动散射对电子迁移率的影响，发现通道厚度波动散射是决定ETB III-V-OI mosfet迁移率的重要参数。此外，我们还阐明了引入MOS界面缓冲层可以通过增加μ波动来有效地提高迁移率。

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Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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