X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune
{"title":"柱状结构中InAs量子点在电信波段的单光子发射","authors":"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune","doi":"10.1109/ICIPRM.2013.6562567","DOIUrl":null,"url":null,"abstract":"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure\",\"authors\":\"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune\",\"doi\":\"10.1109/ICIPRM.2013.6562567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure
We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.
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