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2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching 基于前置光相位开关的新型inp单片源的56Gb/s PDM-BPSK实验
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562626
C. Kazmierski, N. Chimot, F. Blache, J. Decobert, F. Alexandre, J. Honecker, C. Leonhardt, A. Steffan, O. Bertran-Pardo, H. Mardoyan, J. Renaudier, G. Charlet
{"title":"56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching","authors":"C. Kazmierski, N. Chimot, F. Blache, J. Decobert, F. Alexandre, J. Honecker, C. Leonhardt, A. Steffan, O. Bertran-Pardo, H. Mardoyan, J. Renaudier, G. Charlet","doi":"10.1109/ICIPRM.2013.6562626","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562626","url":null,"abstract":"A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125157576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mode locked InAs/InP Quantum dash based DBR Laser monolithically integrated with a semiconductor optical amplifier 基于锁模InAs/InP量子冲刺的DBR激光器与半导体光放大器单片集成
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562638
S. Joshi, N. Chimot, R. Rosales, S. Barbet, A. Accard, A. Ramdane, F. Lelarge
{"title":"Mode locked InAs/InP Quantum dash based DBR Laser monolithically integrated with a semiconductor optical amplifier","authors":"S. Joshi, N. Chimot, R. Rosales, S. Barbet, A. Accard, A. Ramdane, F. Lelarge","doi":"10.1109/ICIPRM.2013.6562638","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562638","url":null,"abstract":"In this paper we present the first demonstration of a InAs/InP Quantum Dash based mode Locked Laser (MLL) compatible with uncooled operation. For integration purpose, we designed a Distributed Bragg Reflector (DBR) mirror in order to close the cavity without disturbing the mode-locking efficiency. As a demonstration of integration, we fabricated such DBR monolithically integrated with a semiconductor optical amplifier. This opens the way to the integration e.g. of frequency comb generators in photonic integrated circuits.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121782253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate 在InP衬底上生长具有InAs/GaSb ii型量子阱的中红外光电探测器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562598
H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata
{"title":"Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate","authors":"H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata","doi":"10.1109/ICIPRM.2013.6562598","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562598","url":null,"abstract":"Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122781271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP based photonic integrated circuits for DWDM optical communication 基于InP的光子集成电路用于DWDM光通信
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562635
B. Mason, M. Larson, Y. Akulova, S. Kalluri
{"title":"InP based photonic integrated circuits for DWDM optical communication","authors":"B. Mason, M. Larson, Y. Akulova, S. Kalluri","doi":"10.1109/ICIPRM.2013.6562635","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562635","url":null,"abstract":"We review and discuss several new advances in InP based photonic integrated circuits and their application to 100Gb/s coherent transmission applications.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123173716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/InGaAs DHBT technology using SiN/SiO2 sidewall spacers InP/InGaAs DHBT技术采用SiN/SiO2侧壁垫片
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562650
N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki
{"title":"InP/InGaAs DHBT technology using SiN/SiO2 sidewall spacers","authors":"N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki","doi":"10.1109/ICIPRM.2013.6562650","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562650","url":null,"abstract":"This paper describes 0.25-μm-emitter InP/InGaAs DHBT technology that uses SiN/SiO<sup>2</sup> sidewall spacers. The technology enables the fabrication of HBTs with a passivation ledge (0.10-μm width) and narrow base metal (<; 0.25 μm). The fabricated HBT exhibits a high current gain of over 50 and an ft of 491 GHz at a collector current density of 18 mA/μm<sup>2</sup>.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures 基于三势垒共振隧道结构的零偏置射频检测二极管的表征与建模
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562641
G. Keller, A. Tchegho, B. Munstermann, W. Prost, F. Tegude, M. Suhara
{"title":"Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures","authors":"G. Keller, A. Tchegho, B. Munstermann, W. Prost, F. Tegude, M. Suhara","doi":"10.1109/ICIPRM.2013.6562641","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562641","url":null,"abstract":"InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetrical I/V-characteristic. Sensitivity measurements are performed and further improvements by scaling of the active device area are discussed. To allow SPICE based circuit simulation an approach for a large signal model is presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132364367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface 偶极子掺杂界面单行载流子光电探测器的分析
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562596
Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao
{"title":"Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface","authors":"Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao","doi":"10.1109/ICIPRM.2013.6562596","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562596","url":null,"abstract":"A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line 250-290 GHz放大器采用75nm InP HEMT技术，采用反向微带传输线
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562648
H. Matsumura, S. Shiba, Masaru Sato, Tsuyoshi Takahashi
{"title":"250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line","authors":"H. Matsumura, S. Shiba, Masaru Sato, Tsuyoshi Takahashi","doi":"10.1109/ICIPRM.2013.6562648","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562648","url":null,"abstract":"In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125025561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Simultaneous 40-Gbps direct modulation of 1.3-µm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate 半绝缘InP衬底上1.3µm波长AlGaInAs分布反射激光阵列的40 gbps同步直接调制
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562614
M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, Tsuyoshi Yamamoto
{"title":"Simultaneous 40-Gbps direct modulation of 1.3-µm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate","authors":"M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, Tsuyoshi Yamamoto","doi":"10.1109/ICIPRM.2013.6562614","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562614","url":null,"abstract":"40-Gbps direct modulation of 1.3-μm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate are investigated. Clear eye-opening is demonstrated under simultaneous operation of two lasers.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128828445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Wide energy level control of InAs QDs using doublecapping procedure by MOVPE 利用MOVPE双覆盖控制InAs量子点的宽能级
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562585
M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura
{"title":"Wide energy level control of InAs QDs using doublecapping procedure by MOVPE","authors":"M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562585","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562585","url":null,"abstract":"We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126299497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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