在InP衬底上生长具有InAs/GaSb ii型量子阱的中红外光电探测器

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562598

H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata

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引用次数: 2

摘要

在InP衬底上制备了InAs/GaSb ii型量子阱红外探测器，并对其进行了评价。112K时暗电流密度为0.1mA/cm2。5μm处量子效率为10%。结果表明，在InP衬底上制备的InAs/GaSb量子阱具有应用于红外图像传感器的潜力。

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Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate

Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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