InP/InGaAs DHBT技术采用SiN/SiO2侧壁垫片

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562650

N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki

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引用次数: 1

摘要

本文介绍了采用SiN/SiO2侧壁垫片的0.25 μm射极InP/InGaAs DHBT技术。该技术可以制造钝化边缘(0.10-μm宽度)和窄母材(2。

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InP/InGaAs DHBT technology using SiN/SiO2 sidewall spacers

This paper describes 0.25-μm-emitter InP/InGaAs DHBT technology that uses SiN/SiO² sidewall spacers. The technology enables the fabrication of HBTs with a passivation ledge (0.10-μm width) and narrow base metal (<; 0.25 μm). The fabricated HBT exhibits a high current gain of over 50 and an ft of 491 GHz at a collector current density of 18 mA/μm².

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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