250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line

Abstract

In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.