Wide energy level control of InAs QDs using doublecapping procedure by MOVPE

Abstract

We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.