Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao
{"title":"偶极子掺杂界面单行载流子光电探测器的分析","authors":"Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao","doi":"10.1109/ICIPRM.2013.6562596","DOIUrl":null,"url":null,"abstract":"A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface\",\"authors\":\"Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao\",\"doi\":\"10.1109/ICIPRM.2013.6562596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface
A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.