利用MOVPE双覆盖控制InAs量子点的宽能级

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562585

M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura

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引用次数: 0

摘要

我们获得了宽能级控制的InAs QDs结构，其PL峰波长范围在1200nm到1800nm之间。采用低压全金属有机源MOVPE生长了Stranski-Krastanov InAs量子点。我们通过改变量子点下的缓冲层组成和双封顶工艺的高度来控制InAs量子点的能级，并控制量子点的供给量。

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Wide energy level control of InAs QDs using doublecapping procedure by MOVPE

We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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