250-290 GHz放大器采用75nm InP HEMT技术，采用反向微带传输线

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562648

H. Matsumura, S. Shiba, Masaru Sato, Tsuyoshi Takahashi

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引用次数: 4

摘要

本文介绍了基于75nm InP HEMT技术的j波段放大器的发展。该电路采用6级共源放大器。放大器的网络匹配采用反向微带线(IMSL)结构。该放大器实现了17.3 dB的小信号增益和35ghz的3db带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line

In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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