基于前置光相位开关的新型inp单片源的56Gb/s PDM-BPSK实验

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562626

C. Kazmierski, N. Chimot, F. Blache, J. Decobert, F. Alexandre, J. Honecker, C. Leonhardt, A. Steffan, O. Bertran-Pardo, H. Mardoyan, J. Renaudier, G. Charlet

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引用次数: 3

摘要

采用柔性光子集成电路技术，在InP上实现了一种基于快速EAMs前置相位开关的单片QPSK-ready发射源。在DPSK相干传输实验中，其传输速率高达56Gb/s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching

A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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