Comparative study on frequency limits of nanoscale HEMTs with various channel materials

Abstract

The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic f_T from the lower V_ds because of the higher electron velocity. Owing to the shorter limit in the L_g scaling at the lower V_ds, the device C also exhibits the higher frequency limit in the intrinsic f_T, indicating its potential for the low power and THz operation.