InAs/Al80Ga20Sb自开关二极管的低温直流特性研究

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562599

A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart

{"title":"InAs/Al80Ga20Sb自开关二极管的低温直流特性研究","authors":"A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart","doi":"10.1109/ICIPRM.2013.6562599","DOIUrl":null,"url":null,"abstract":"DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes\",\"authors\":\"A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart\",\"doi\":\"10.1109/ICIPRM.2013.6562599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了一种用于太赫兹探测的InAs/Al80Ga20Sb自开关二极管在300 K和6 K下的直流特性。与300 K相比，在6 K的零偏条件下，二极管的I-V非线性和相关的响应性增强。在300 K和6 K时，其固有响应率分别为490 V/W和4400 V/W。

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Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes

DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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