Advanced Electronic Materials最新文献

{"title":"Computational and AI-Driven Design of Hydrogels for Bioelectronic Applications","authors":"Rebekah Finster, Prashant Sankaran, Eloise Bihar","doi":"10.1002/aelm.202400763","DOIUrl":"https://doi.org/10.1002/aelm.202400763","url":null,"abstract":"As hydrogel research progresses, hydrogels are becoming essential tools in bioelectronics and biotechnology. This review explores the diverse range of natural and synthetic gel materials tailored for specific bioelectronic applications, with a focus on their integration with electronic components to create responsive, multifunctional systems. The role of Artificial Intelligence (AI) in advancing gel design and functionality from optimizing material properties to enabling precise, predictive modeling is investigated. Furthermore, recent innovations that harness the synergy between hydrogels, electronics, and AI are discussed, emphasizing the potential of these materials to drive future advances in biomedical technologies. AI-driven approaches are transforming the development of hydrogels for applications in wound healing, biosensing, drug delivery, and tissue engineering.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neuron-Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks","authors":"Braydon Segars, Kyle Rosenberg, Sarita Shrestha, Joshua J. Maraj, Stephen A. Sarles, Eric Freeman","doi":"10.1002/aelm.202400644","DOIUrl":"https://doi.org/10.1002/aelm.202400644","url":null,"abstract":"Brain-inspired (or neuromorphic) computing circumvents costly bottlenecks in conventional Von Neumann architectures by collocating memory and processing. This is accomplished through dynamic material architectures, strengthening or weakening internal conduction pathways similar to synaptic connections within the brain. A new class of neuromorphic materials approximates synaptic interfaces using lipid membranes assembled via the droplet interface bilayer (DIB) technique. These DIB membranes have been studied as novel memristors or memcapacitors owing to the soft, reconfigurable nature of both the lipid membrane geometry and the embedded ion-conducting channels. In this work, a biomolecular approach to neuromorphic materials is expanded from <i>model synapses</i> to a <i>charge-integrating model neuron</i>. In these serial membrane networks, it is possible to create distributions of voltage-sensitive gates capable of trapping ionic charge. This trapped charge creates transmembrane potential differences that drive changes in the system's net capacitance through electrowetting, providing a synaptic weight that changes in response to the history and timing of input signals. This fundamental change from interfacial memory (dimensions of the membrane) to internal memory (charge trapped within the droplets) provides a functional plasticity capable of multiple weights, longer-term retention roughly an order of magnitude greater than memory stored in the membranes alone, and programming-erasure.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Transient Photoelectric Spiking Neuron Based on a Highly Robust MgO Composite Threshold Switching Memristor for Selective UV Perception","authors":"Yaxiong Cao, Rui Wang, Saisai Wang, Tonglong Zeng, Wanlin Zhang, Jing Sun, Xiaohua Ma, Hong Wang, Yue Hao","doi":"10.1002/aelm.202400678","DOIUrl":"https://doi.org/10.1002/aelm.202400678","url":null,"abstract":"The biological photoreceptors in the retina convert light information into spikes, inspiring the emergence of artificial photoelectric spiking neurons. However, due to the lack of biocompatible and biodegradable characteristics, artificial photoelectric spiking neurons based on threshold switching (TS) devices are not available for bio‐integrated optical medical diagnostics and neuromorphic computing. Here, an artificial photoelectric spiking neuron integrated with a physically transient memristor and photodetector for UV perception is proposed. The transient memristor with a MgO:Mg resistive layer implemented by the co‐sputtering process of MgO and Mg targets shows highly robust TS performance, while the ZnO‐based transient photodetector can selectively detect UV light at power densities below 10 mW cm<jats:sup>−2</jats:sup>. More interestingly, the frequency of the firing spikes generated by artificial photoelectric spiking neuron increases with the enhancement of UV light intensity. In addition, the recognition accuracy of UV information extracted from the surrounding environment reaches ≈99.8% by spiking neural network consisting of photoelectric spiking neuron when the object that blended into the background are not easily detected. This work demonstrates that the functions of the biological photoreceptors may be truly mimicked by artificial photoelectric spiking neuron with transiency, expanding its application in optical disease diagnosis and implantable visual neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142968278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Organic Photo-Responsive Piezoelectric Materials Based on Pyrene Molecules for Flexible Sensors","authors":"Xinyi Song, Xiaohui Wang, Wei Liu, Xiaoxue Chen, Shaoling Li, Md Shariful Islam, Ling Li, Xiaobo Zhao, Carl Redshaw, Yu Zhao, Changyong (Chase) Cao, Xing Feng","doi":"10.1002/aelm.202400933","DOIUrl":"https://doi.org/10.1002/aelm.202400933","url":null,"abstract":"Due to the advantages of multiplicity, functionality, and flexibility of organic building blocks, organic piezoelectric materials are regarded as next-generation materials for potential applications in flexible sensors and energy harvesting devices. Here, a new pure organic pyrene-based molecule, <b>PyPT</b> is presented, which crystallizes in a non-centrosymmetric structure. <b>PyPT</b> is synthesized and demonstrated to be suitable for developing flexible sensors due to its remarkable piezoelectric properties. The pyrene-based piezoelectric molecule exhibits excitation wavelength-dependent emission behavior and aggregation-caused quenching properties and demonstrated a piezoelectric coefficient (d₃₃) of 8.02 ± 0.26 pm V⁻¹. The output electronic signal of a <b>PyPT</b>-based flexible sensor shows a significant increase from 30 to 721 pA as the strain increases from 0.12% to 0.59% with a low Young's modulus of 1.63 Gpa. This high-performance piezoelectric sensor can serve as a sensitive sound sensor for sound detection and recognition based on the basic characteristics of sound, such as amplitude, frequencies, and timbres. This research offers new insights into advancing pure organic luminescent materials with piezoelectric properties, paving the way for applications in flexible electronics for wearables, human–machine interfaces, and the Internet of Things.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Robust Double Memristive Device Based on Perovskite/Molybdenum Oxide‐Sulfide Compound Heterojunction System","authors":"Gion Kalemai, Apostolos Verykios, Georgios Chatzigiannakis, Polychronis Tsipas, Athanasios Dimoulas, Vassilis Psycharis, Elias Sakellis, Nikos Boukos, Vlassis Likodimos, Ioannis Karatasios, Michael‐Alexandros Kourtis, Konstantinos Aidinis, Alexander Chroneos, Abd Rashid bin Mohd Yusoff, Panagiotis Argitis, Dimitris Davazoglou, Maria Vasilopoulou, Anastasia Soultati","doi":"10.1002/aelm.202400433","DOIUrl":"https://doi.org/10.1002/aelm.202400433","url":null,"abstract":"Halide organic–inorganic perovskites (HOIPs) are a promising class of materials for neuromorphic computing and processing systems demonstrating a variety of resistive switching (RS) mechanisms. HOIPs have been used as active layers in two‐ and three‐terminal synaptic devices reporting high performance in metrics of speed and energy consumption. Nevertheless, halide perovskites suffer from poor ambient stability and reproducibility. In this work, a highly robust double memristor based on two active layers forming a stacking heterojunction is demonstrated. In particular, the functional layer consists of a molybdenum oxide‐molybdenum sulfide compound (MoO<jats:sub>3</jats:sub>‐MoS<jats:sub>2</jats:sub>) and a quadruple cation perovskite (RbCsMAFA) deposited on top showing favorable band alignment for the specific application. The double memristor based on the MoO<jats:sub>3</jats:sub>‐MoS<jats:sub>2</jats:sub>/RbCsMAFA heterojunction exhibits impressive and stable resistive switching behavior with endurance of 100 cycles, high retention of 2 × 10<jats:sup>4</jats:sup> s, high environmental stability maintaining its memristive behavior for 1 month, and excellent artificial synaptic functions. The robust device also exhibits good thermal stability maintaining the memristive characteristics at 85 °C, as well as good photonic memristive behavior with an improved ON/OFF ratio under constant illumination. Here it is proven that the proposed double memristor is a promising candidate for artificial synapses and neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current","authors":"Chunlin Qu, Isha Maini, Qing Guo, Alastair Stacey, David A. J. Moran","doi":"10.1002/aelm.202400770","DOIUrl":"https://doi.org/10.1002/aelm.202400770","url":null,"abstract":"In this work, a new Field Effect Transistor device concept based on hydrogen‐terminated diamond (H‐diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement‐mode operation and high on‐current with improved channel charge mobility compared to Transfer‐Doped equivalents. Electron‐beam evaporated Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is used on H‐diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high‐quality H‐diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high‐density hole accumulation layer by gating the entire device channel which is encapsulated in dual‐stacks of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage &lt; −6 V with on‐current &gt; 80 mA mm<jats:sup>−1</jats:sup>. Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10<jats:sup>12</jats:sup> cm<jats:sup>−2</jats:sup> and increased hole mobility of 110 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> in comparison with more traditional Transfer‐Doped H‐diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H‐diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025)","authors":"Yunwei Ma,&nbsp;Yuan Qin,&nbsp;Matthew Porter,&nbsp;Joseph Spencer,&nbsp;Zhonghao Du,&nbsp;Ming Xiao,&nbsp;Boyan Wang,&nbsp;Yifan Wang,&nbsp;Alan G. Jacobs,&nbsp;Han Wang,&nbsp;Marko Tadjer,&nbsp;Yuhao Zhang","doi":"10.1002/aelm.202570001","DOIUrl":"10.1002/aelm.202570001","url":null,"abstract":"<p><b>Multidimensional Power Devices</b></p><p>Ultra-wide bandgap semiconductors are promising for power applications in grid and renewable energy systems. In article number 2300662, Yuhao Zhang and co-authors demonstrate nickel oxide as a p-type material with tunable doping and high field. The 8000 V charge-balance device shows a record high average electric field.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025)","authors":"Xian-Hu Zha,&nbsp;Yu-Xi Wan,&nbsp;Shuang Li,&nbsp;Dao Hua Zhang","doi":"10.1002/aelm.202570002","DOIUrl":"10.1002/aelm.202570002","url":null,"abstract":"<p><b>Ternary Ultra-Wide Bandgap Semiconductors</b></p><p>In article number 2400547, Dao Hua Zhang and co-workers show that low energy level and flat band dispersion at valence band maximum (VBM) restricts the <i>p</i>-type conduction of β-Ga₂O₃. Here, β₃B₂;-Ga₂O₃-based new type ternary ultra-wide bandgap semiconductors: β-(Rh_xGa_1−x)₂O₃'s alloys with <i>x</i> from 0 to 0.5 are reported. The energy and band-dispersion curvature of β-Ga₂O₃'s VBM are significantly enhanced via Rh-alloying. The bandgaps of β-(Rh_xGa_1−x)₂O₃ are still much larger than that in commercial silicon carbide. The β-(Rh_xGa_1−x)₂O₃ can be candidate semiconductors for a new generation of optoelectronics and power electronics.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials","authors":"","doi":"10.1002/aelm.202400958","DOIUrl":"10.1002/aelm.202400958","url":null,"abstract":"&lt;p&gt;As we mark the 10th anniversary of Advanced Electronic Materials, it is an ideal moment to pause and reflect on the incredible journey that has shaped this journal into a leading platform for innovation and cutting-edge research in the field of electronic materials. From its humble beginnings in 2015 to its current position as one of the most respected journals in the field, the past decade has been one of extraordinary growth, collaboration, and scientific advancement. In particular, as a platform for publishing significant studies on the design, fabrication, and application of electronic materials in emerging technologies, the journal serves a broad geographical authorship covering a wide spectrum of topics.&lt;/p&gt;&lt;p&gt;&lt;/p&gt;&lt;p&gt;When Advanced Electronic Materials was launched ten years ago, the landscape of materials science, especially electronic materials, was rapidly evolving. The innovations in semiconductors, neuromorphic architecture, magnetic materials, flexible electronics, topological and superconducting compounds, and other critical technologies have revolutionized the fields of computing and software development, as well as the fields of bioelectronics and biomedical engineering. Our goal for the journal was clear: to provide a premier platform where the most impactful and pioneering research on advanced materials for applications in electronics could be published and disseminated to drive the next wave of technological advancement.&lt;/p&gt;&lt;p&gt;As we reflect on the journal's journey, it is evident that we have surpassed our initial goals. Launched by a team of qualified and professional editors, along with a well-trusted academic advisory editorial board, the journal Advanced Electronic Materials has been there every step of the way, publishing interdisciplinary research, from collaborative works bridging physics, chemistry, and engineering, to studies examining real-world applications.&lt;/p&gt;&lt;p&gt;More closely, the most cited articles in 10 years include a research article authored by Y. Gogotsi et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;1&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; reporting the fabrication of Field Effect Transistors (FETs) based on monolayer Ti&lt;sub&gt;3&lt;/sub&gt;C&lt;sub&gt;2&lt;/sub&gt;T&lt;sub&gt;x&lt;/sub&gt; flakes exhibiting high field-effect electron mobility, a review article by J. Y. Tsao et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;2&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; on ultrawide bandgap semiconductors and a review article by H. Shi et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;3&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; summarizing approaches for improving the electrical conductivity of one of the most used conducting polymers:PEDOT:PSS (see all listed in &lt;b&gt;Table&lt;/b&gt; 1).&lt;/p&gt;&lt;p&gt;We have also seen a marked increase in international collaborations, with authors and readers from around the globe contributing to enlightening the role of advanced materials in solving some of the world's most pressing technological challenges. These studies are often the result of cross-disciplinary teams that have worked together to push the boundaries of what is","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400958","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freestanding Membranes of Titania Nanorods, Photocatalytically Reduced Graphene Oxide, and Silk Fibroin: Tunable Properties and Electrostatic Actuation","authors":"Finn Dobschall, Hauke Hartmann, Sophia Caroline Bittinger, Norbert Schulz, Hendrik Schlicke, Hoc Khiem Trieu, Tobias Vossmeyer","doi":"10.1002/aelm.202400602","DOIUrl":"https://doi.org/10.1002/aelm.202400602","url":null,"abstract":"In this study, the mechanical properties of freestanding membranes made of graphene oxide (GO), titania nanorods (TNRs), and silk fibroin (SF) are investigated and their application is demonstrated as electrostatically driven actuators. Using a stamping process, the membranes are transferred onto substrates with circular apertures or square cavities measuring ∼80 to 245 µm in diameter or edge length, respectively. Afterwards, the membranes are exposed to deep-UV (DUV) radiation in order to photocatalytically convert GO to reduced graphene oxide (rGO). Microbulge tests combined with atomic force microscopy (AFM) measurements reveal enhanced mechanical stability after the DUV treatment, as indicated by an increase of Young's modulus from ∼22 to ∼35 GPa. The toughness of the DUV-treated membranes is up to ∼1.25 MJ m⁻³, while their ultimate biaxial tensile stress and strain are in the range of ∼377 MPa and ∼0.68%, respectively. Further, by applying voltages of up to ±40 V the membranes are electrostatically actuated and deflected by up to ∼1.7 µm, as determined via in situ AFM measurements. A simple electrostatic model is presented that describes the deflection of the membrane as a function of the applied voltage very well.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"98 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}