Advanced Electronic Materials最新文献

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Emerging Spatiotemporal Dynamics in Multiterminal Neuromorphic Nanowire Networks Through Conductance Matrices and Voltage Maps 通过电导矩阵和电压图揭示多端神经形态纳米线网络的时空动态性
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-13 DOI: 10.1002/aelm.202400750
Davide Pilati, Fabio Michieletti, Alessandro Cultrera, Carlo Ricciardi, Gianluca Milano
{"title":"Emerging Spatiotemporal Dynamics in Multiterminal Neuromorphic Nanowire Networks Through Conductance Matrices and Voltage Maps","authors":"Davide Pilati, Fabio Michieletti, Alessandro Cultrera, Carlo Ricciardi, Gianluca Milano","doi":"10.1002/aelm.202400750","DOIUrl":"https://doi.org/10.1002/aelm.202400750","url":null,"abstract":"Self-organizing memristive nanowire (NW) networks are promising candidates for neuromorphic-type data processing in a physical reservoir computing framework because of their collective emergent behavior, which enables spatiotemporal signal processing. However, understanding emergent dynamics in multiterminal networks remains challenging. Here experimental spatiotemporal characterization of memristive NW networks dynamics in multiterminal configuration is reported, analyzing the activation and relaxation of network's global and local conductance, as well as the inherent spatial nonlinear transformation capabilities. Emergent effects are analyzed <i>i)</i> during activation, by investigating the spatiotemporal dynamics of the electric field distribution across the network through voltage mapping; <i>ii)</i> during relaxation, by monitoring the evolution of the conductance matrix of the multiterminal system. The multiterminal approach also allowed monitoring the spatial distribution of nonlinear activity, demonstrating the impact of different network areas on the system's information processing capabilities. Nonlinear transformation tasks are experimentally performed by driving the network into different conductive states, demonstrating the importance of selecting proper operating conditions for efficient information processing. This work allows a better understanding of the local nonlinear dynamics in NW networks and their impact on the information processing capabilities, providing new insights for a rational design of self-organizing neuromorphic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142609903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning the Magnetism in Ultrathin CrxTey Films by Lattice Dimensionality 通过晶格维度调节超薄 CrxTey 薄膜的磁性
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-12 DOI: 10.1002/aelm.202400720
Guangyao Miao, Minghui Gu, Haojie Sun, Pan Chen, Jiade Li, Siwei Xue, Nuoyu Su, Zhibin Su, Weiliang Zhong, Zhihan Zhang, Xuetao Zhu, Jiandi Zhang, Yugui Yao, Wei Jiang, Meng Meng, Weihua Wang, Jiandong Guo
{"title":"Tuning the Magnetism in Ultrathin CrxTey Films by Lattice Dimensionality","authors":"Guangyao Miao, Minghui Gu, Haojie Sun, Pan Chen, Jiade Li, Siwei Xue, Nuoyu Su, Zhibin Su, Weiliang Zhong, Zhihan Zhang, Xuetao Zhu, Jiandi Zhang, Yugui Yao, Wei Jiang, Meng Meng, Weihua Wang, Jiandong Guo","doi":"10.1002/aelm.202400720","DOIUrl":"https://doi.org/10.1002/aelm.202400720","url":null,"abstract":"2D magnetic crystals with atomic thickness exhibit intriguing physical properties, which have attracted considerable research interest in the related materials’ family, both in fundamental research and in developing spintronic devices. The recent discovery of some non-van der Waals 2D magnetic crystals expands the systems. Nevertheless, the relationship between the dimensionality of microscopic magnetic exchange interactions and macroscopic magnetic properties at the 2D limit remains to be fully elucidated. Here, we have fabricated mono-phased continuous ultrathin CrTe<sub>2</sub> and Cr<sub>3</sub>Te<sub>4</sub> films by molecular beam epitaxy and elucidated the diverse magnetism tuned by the dimensionality of exchange interactions by a joint study of spin-polarized scanning tunneling microscopy, magnetization, magneto-transport measurements, and density functional theory calculations. The transition from a zigzag-antiferromagnetic order in the monolayer CrTe<sub>2</sub> to a ferromagnetic (FM) order in the second-layer CrTe<sub>2</sub> is confirmed, which is driven by their varied in-plane lattice constants induced change of 2D exchange interactions. A robust FM state with large perpendicular magnetic anisotropy in Cr<sub>3</sub>Te<sub>4</sub> is observed, originating from its strong 3D exchange interactions. The observed evolution of magnetism demonstrates that the dimensionality of magnetic exchange interactions strongly influences magnetism even at the 2D limit.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142599959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Near-Zero Index Metamaterial Lens for Reduced Complexity and High-Performance Active Electronically Scanned Arrays 用于降低复杂性和高性能有源电子扫描阵列的近零指数超材料透镜
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-12 DOI: 10.1002/aelm.202400224
J. Daniel Binion, Colin A. Mussman, Erik Lier, Thomas H. Hand, Douglas H. Werner
{"title":"A Near-Zero Index Metamaterial Lens for Reduced Complexity and High-Performance Active Electronically Scanned Arrays","authors":"J. Daniel Binion, Colin A. Mussman, Erik Lier, Thomas H. Hand, Douglas H. Werner","doi":"10.1002/aelm.202400224","DOIUrl":"https://doi.org/10.1002/aelm.202400224","url":null,"abstract":"A lens consisting of an anisotropic near-zero index metamaterial (NZIM) is introduced for improving the far-field performance of active electronically scanned arrays (AESA). Several simulation studies demonstrate how the NZIM lens (metalens) can be functionalized to transform the embedded element pattern of an array from a typical cosinusoidal shape to a flat-topped pattern, dramatically reducing the gain at wider angles. This corresponds to reductions in scan loss and suppression of grating lobes in the desired field of view (FOV), especially for arrays with large element spacing (i.e., sparse or thinned arrays). The metalens concept is demonstrated through several simulation studies illustrating the beam shaping capability of NZIM materials. A fabricated metalens demonstrates full suppression of grating lobes and minimal scan loss with a ±10° FOV, which is ideally suited for limited FOV applications such as geosynchronous satellite communications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142599958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring Inorganic Flexible Electronics: III-Nitride Light-Emitting Diode Epilayers on Wafer-Scale Exfoliable Mica Substrate (Adv. Electron. Mater. 11/2024) 探索无机柔性电子器件:晶圆级可剥离云母基底上的Ⅲ-氮化物发光二极管外延层(Adv.)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-09 DOI: 10.1002/aelm.202470037
Tongxin Lu, Zhiwen Liang, Ye Yuan, Shangfeng Liu, Jiahui Li, Jiale Zhao, Tianren Cai, Tai Li, Wei Luo, Tao Wang, Qi Wang, Xinqiang Wang
{"title":"Exploring Inorganic Flexible Electronics: III-Nitride Light-Emitting Diode Epilayers on Wafer-Scale Exfoliable Mica Substrate (Adv. Electron. Mater. 11/2024)","authors":"Tongxin Lu,&nbsp;Zhiwen Liang,&nbsp;Ye Yuan,&nbsp;Shangfeng Liu,&nbsp;Jiahui Li,&nbsp;Jiale Zhao,&nbsp;Tianren Cai,&nbsp;Tai Li,&nbsp;Wei Luo,&nbsp;Tao Wang,&nbsp;Qi Wang,&nbsp;Xinqiang Wang","doi":"10.1002/aelm.202470037","DOIUrl":"10.1002/aelm.202470037","url":null,"abstract":"<p><b>Inorganic Flexible Electronics: III-Nitride Epilayers on Exfoliable Mica Substrate</b></p><p>Mica is a promising substrate for flexible photonic applications. By means of sputtered AlN as a buffer layer, two types of light-emitting diode (LED) epitaxial wafers, blue and green, were fabricated on 2-inch exfoliated mica substrates. Strong electroluminescence of the LED epitaxial wafers confirms the prospect of mica in electrically driven flexible opto-electronics. For further details, see article number 2400256 by Ye Yuan, Xinqiang Wang, and co-workers. \u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470037","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: (Adv. Electron. Mater. 11/2024) 刊头:(Adv.)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-09 DOI: 10.1002/aelm.202470038
{"title":"Masthead: (Adv. Electron. Mater. 11/2024)","authors":"","doi":"10.1002/aelm.202470038","DOIUrl":"10.1002/aelm.202470038","url":null,"abstract":"","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470038","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142597844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust Light Detection from Ultraviolet to Near-Infrared with ZnGa2O4/p-Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024) 利用 ZnGa2O4/p-Si 异质结光电二极管实现从紫外到近红外的强光检测及其在光电物理不可克隆功能中的应用(Adv.)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-09 DOI: 10.1002/aelm.202470035
Wangmyung Choi, Seungme Kang, Yeong Jae Kim, Youngwoo Yoo, Wonjun Shin, Yeongkwon Kim, Young-Joon Kim, Byung Chul Jang, Jaehyun Hur, Hocheon Yoo
{"title":"Robust Light Detection from Ultraviolet to Near-Infrared with ZnGa2O4/p-Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)","authors":"Wangmyung Choi,&nbsp;Seungme Kang,&nbsp;Yeong Jae Kim,&nbsp;Youngwoo Yoo,&nbsp;Wonjun Shin,&nbsp;Yeongkwon Kim,&nbsp;Young-Joon Kim,&nbsp;Byung Chul Jang,&nbsp;Jaehyun Hur,&nbsp;Hocheon Yoo","doi":"10.1002/aelm.202470035","DOIUrl":"10.1002/aelm.202470035","url":null,"abstract":"<p><b>Robust Light Detection with Broadband ZnGa<sub>2</sub>O<sub>4</sub>/p-Si Heterojunction Photodiode for Physically Unclonable Functions</b></p><p>In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa<sub>2</sub>O<sub>4</sub> film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa<sub>2</sub>O<sub>4</sub>. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470035","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of Conjugated Polymer Monolayer Networks on Water Surface and Nonlinear Charge Transport (Adv. Electron. Mater. 11/2024) 水面共轭聚合物单层网络的形成与非线性电荷传输(Adv.)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-09 DOI: 10.1002/aelm.202470036
Yuya Ishizaki-Betchaku, Naoki Hara, Taikai Matsuda, Jun Matsui, Takahiro Seki, Shusaku Nagano
{"title":"Formation of Conjugated Polymer Monolayer Networks on Water Surface and Nonlinear Charge Transport (Adv. Electron. Mater. 11/2024)","authors":"Yuya Ishizaki-Betchaku,&nbsp;Naoki Hara,&nbsp;Taikai Matsuda,&nbsp;Jun Matsui,&nbsp;Takahiro Seki,&nbsp;Shusaku Nagano","doi":"10.1002/aelm.202470036","DOIUrl":"10.1002/aelm.202470036","url":null,"abstract":"<p><b>Formation of Conjugated Polymer Monolayer Networks and Nonlinear Charge Transport</b></p><p>Yuya Ishizaki-Betchaku, Shusaku Nagano, and co-workers (article number 2400427) have demonstrated that the origin of nonlinear charge transport is a two-dimensional conducting network. Doped poly(3-hexylthiophene) network monolayers and multilayers with controlled density and number of layers are fabricated by modifying Langmuir–Blodgett deposition. These networks exhibit nonlinear properties that strongly depend on the network density and the number of layers. This research highlights the unique features of conducting polymer monolayer networks and paves the way for neuromorphic device applications, including a reservoir of conjugated semiconductor polymer-based materials with controllable nanostructures.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470036","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Impact of Non‐Monolithic Semiconductor Capacitance on Organic Electrochemical Transistors Performance and Design 非单片半导体电容对有机电化学晶体管性能和设计的影响
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-09 DOI: 10.1002/aelm.202400373
Ned E. Dreamer, Dimitrios A. Koutsouras, Morteza Hassanpour Amiri, Paschalis Gkoupidenis, Kamal Asadi
{"title":"The Impact of Non‐Monolithic Semiconductor Capacitance on Organic Electrochemical Transistors Performance and Design","authors":"Ned E. Dreamer, Dimitrios A. Koutsouras, Morteza Hassanpour Amiri, Paschalis Gkoupidenis, Kamal Asadi","doi":"10.1002/aelm.202400373","DOIUrl":"https://doi.org/10.1002/aelm.202400373","url":null,"abstract":"The existing device models for organic electrochemical transistors (OECTs) fail to provide any device design guidelines for optimized performance parameters such as transconductance that are pivotal for the applications OECTs in sensing. Moreover, the current models are based on the questionable assumption of a homogenous organic semiconductor layer, and all predict a linear behavior of the resistance with the OECT channel length. Consequently, the experimentally observed nonlinear resistance behavior in OECTs has been overlooked thus far. Here, an OECT device model is developed that accurately describes the nonlinear behavior of the OECT channel resistance and offers the first guidelines for maximizing transconductance. The model is inherently nonlinear and the nonlinearity stem from the non‐monolithic capacitance of the organic semiconductor layer. Moreover, the model provides a consistent and reliable estimations for the contact resistance in OECTs. The success of the model in accurately describing and providing predictions of the OECT operation by relating the device's geometrical parameters with electrochemical parameters of the semiconductor layer paves the way toward unlocking OECT potentials in diverse applications, from biosensing to neuromorphic computing and flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices 利用金属氧化物薄膜器件进行神经元多单元活动处理
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-06 DOI: 10.1002/aelm.202400638
Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis
{"title":"Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices","authors":"Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis","doi":"10.1002/aelm.202400638","DOIUrl":"https://doi.org/10.1002/aelm.202400638","url":null,"abstract":"Intra-cortical brain-machine interfaces (BMIs), able to decode neural activity in real-time, represent a revolutionary opportunity for treating medical conditions. However, traditional systems focusing on single-neuron spike detection require high processing rates and power, hindering the up-scaling for neurons-population monitoring in clinical application. An intriguing proposition is the memristive integrating sensor (MIS) approach, which uses resistive RAM (RRAM) for threshold-based neural activity detection. MIS leverages analogue multi-state switching properties of metal-oxide RRAM to compress neural inputs by encoding above-threshold events in resistance displacement, facilitating efficient data down-sampling in the post-processing, enabling low-power, high-channel systems. Initially tested on spikes and local field potentials, here MIS is adapted to process multi-unit activity envelope (eMUA)—the envelope of entire spiking activity—which has recently been proposed as crucial input for real-time neuro-prosthetic control. Prior necessary modifications to the MIS for effective operation, this adaptation achieved over 95% sensitivity across two types of metal-oxide devices: Pt/TiO<sub><i>x</i></sub>/Pt and TiN/HfO<sub><i>x</i></sub>/TiN, proving its platform-agnostic capabilities. Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal-oxide-semiconductor (CMOS) front-ends. This eMUA-MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"146 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recyclability-by-design of Printed Electronics by Low-Temperature Sintering of Silver Microparticles 通过低温烧结银微颗粒实现印刷电子产品的可回收设计
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2024-11-06 DOI: 10.1002/aelm.202400533
David van Impelen, Lola González-García, Tobias Kraus
{"title":"Recyclability-by-design of Printed Electronics by Low-Temperature Sintering of Silver Microparticles","authors":"David van Impelen, Lola González-García, Tobias Kraus","doi":"10.1002/aelm.202400533","DOIUrl":"https://doi.org/10.1002/aelm.202400533","url":null,"abstract":"A low-temperature sintering mechanism of silver microparticles is established and used to enable the design-for-recycling of printed electronics. The formation of necks during the initial phase sintering of precipitated and atomized silver microparticles is studied. Temperature- and time-dependent in-situ analyses indicate the existence of a mobile silver species that provides efficient mass transport. The activation energy of neck formation identifies silver ion formation as the rate-limiting step of low-temperature silver sintering. It is demonstrated that resistivities of 271 times that of bulk silver can be attained after 40 minutes at 150°C. Low-temperature sintering not only reduces the energy required during thermal treatment but it yields layers that are suitable for recycling, too. The resulting layers have conductive necks that are mechanically weak enough to be broken during recycling. Printed layers are redispersed and the recycled silver powder is reused without loss of the electrical performance in new prints. Their conductivities are industrially relevant, which makes this recyclability-by-design approach promising for manufacturing more sustainable printed electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"243 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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