Advanced Electronic Materials最新文献

{"title":"Toward All-Carbon Electronics Buried in Diamond","authors":"Calum S. Henderson, Patrick S. Salter, Emil T. Jonasson, Richard B. Jackman","doi":"10.1002/aelm.202500267","DOIUrl":"https://doi.org/10.1002/aelm.202500267","url":null,"abstract":"This work investigates the use of femtosecond laser processing to fabricate various nanocarbon structures with distinct electrical behaviors within diamond substrates. Conventional approaches for achieving diamond doping have significant disadvantages, including challenging growth profiles, limited environmental stability, and sub-optimal psuedo-vertical structures. Here, it is demonstrated that laser-written nanocarbon networks (NCNs) directly alleviate these issues, demonstrating the highly repeatable fabrication of robust and precise electrical architectures buried in diamond with proven stability over repeated temperature and voltage cycling. By varying the laser pulse repetition rate (PRR), a transition from Ohmic conductive to semiconductive/ambipolar behavior is achieved in the modified diamond. Furthermore, a proof-of-concept, all-carbon transistor architecture buried within the bulk diamond is presented, showcasing the potential for integrated device fabrication using the laser-writing process.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance","authors":"Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He","doi":"10.1002/aelm.202500505","DOIUrl":"https://doi.org/10.1002/aelm.202500505","url":null,"abstract":"Developing low-temperature sputtering for gate dielectrics is crucial for simple, flexible oxide TFT fabrication. However, such films suffer from low capacitance, high leakage, and high interfacial defects. This work proposes a synergistic strategy using an ultrathin alumina passivation layer combined with ultraviolet-assisted oxygen ambient rapid thermal annealing (UV-ORTA) to enable fully low-temperature sputtered high-performance amorphous indium gallium zinc oxide (a-IGZO) TFTs. The UV-ORTA process significantly improves the gate dielectric by reducing oxygen vacancies, increasing optical bandgap, and boosting capacitance density. The sputtered alumina layer effectively optimizes the dielectric/active layer interface, reducing defect density comparably to atomic layer deposition. TFTs fabricated entirely by sputtering at 200 °C demonstrate high performance: saturation mobility of 14.5 cm²·V⁻¹·s⁻¹, on/off ratio of 8.6 × 10⁶, subthreshold swing of 0.09 V/dec, and good bias stability. Resulting inverters show full-swing operation, sensitive dynamic response, excellent frequency stability, and a voltage gain exceeding 12. This strategy provides a promising solution for low-temperature, fully-sputtered all-oxide TFTs compatible with flexible displays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Modulation of Polarization and Leakage Current in MPB-HZO Capacitors via TiO2 Interlayer","authors":"Changhyeon Han, Been Kwak, Joonhyeok Choi, Sung-Wook Park, Dahye Yu, Minsuk Song, Rino Choi, Daewoong Kwon","doi":"10.1002/aelm.202500314","DOIUrl":"https://doi.org/10.1002/aelm.202500314","url":null,"abstract":"To address critical reliability concerns in ferroelectric devices, the role of a TiO₂ interlayer in modulating the electrical characteristics of Hf_xZr_1-xO₂ (HZO)-based metal-ferroelectric-metal (MFM) capacitors near the morphotropic phase boundary (MPB) is investigated. The TiO₂ interlayer is inserted at the HZO interface to selectively modulate defect behavior while preserving the desired MPB phase composition. Electrical, structural, and spectroscopic analyses reveal that TiO₂ integration enables 1) suppression of leakage pathways, 2) stabilization of polarization with enhanced dielectric response, 3) modulation of oxygen vacancy (V_O) distribution, and 4) reduction of low-frequency noise (LFN) amplitude. These synergistic effects collectively improve the reliability and energy efficiency of MPB-HZO capacitors, offering a promising interface-engineering strategy for next-generation ferroelectric DRAM technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"196 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing Electrical Impedance Based Deformation Sensing with Dielectric Current Guide","authors":"Arsen Abdulali, David Hardman, Yue Xie, Fumiya Iida","doi":"10.1002/aelm.202500365","DOIUrl":"https://doi.org/10.1002/aelm.202500365","url":null,"abstract":"Sensing the deformation of soft robots is vital for effective control and interaction with the environment. Electrical impedance tomography (EIT) enables such sensing by monitoring changes in conductivity, but its sensitivity is often highest near the electrodes, limiting performance for distant deformations. Existing strategies to address this limitation typically rely on introducing conductive material heterogeneities, such as anisotropic or patterned conductors, to redirect current flow. In this work, a fundamentally different approach is presented: utilizing a dielectric guide to manipulate the electric field within the conductive body. This method leverages widely used soft robotic materials, such as silicone, in a new role as a passive electric field guide, allowing reconfiguration of sensitivity distributions without embedding conductive components. Physical experiments with a conductive hydrogel cylinder show that the dielectric guide increases deformation sensing accuracy by 21%, reduces sensitivity to noise, and enables a reduction in the number of required EIT channels. This work establishes dielectric-based field manipulation as a novel design strategy for high-fidelity, low-interference proprioception in soft robotics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145140640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"“Understanding and Overcoming the Poor Efficiency of QLEDs Utilizing Organic Electron Transport Layers”","authors":"B. S. B. Mobarak, Hany Aziz","doi":"10.1002/aelm.202500412","DOIUrl":"https://doi.org/10.1002/aelm.202500412","url":null,"abstract":"Despite their potential advantages over widely used ZnO, the use of organic materials for the electron transport layers (ETLs) in quantum dot light-emitting devices (QLEDs) has been limited by subpar external quantum efficiency (EQE). This work investigates the root causes of this issue and approaches to address them. Contrary to expectations, electron leakage toward the hole transport layer (HTL) is identified as a plays a primary role in limiting the efficiency of these devices. By using a multilayer ETL configuration that includes electron blocking interfaces, electron leakage is reduced, and higher EQE is achieved. Using this approach, a max EQE of ≈10% in green- and red-emitting QLEDs, the highest reported for a green QLED not utilizing a ZnO ETL and among the highest in the case of red QLEDs, has been demonstrated. Tests on electron-only devices as well as transient electroluminescence measurements point to a mechanism where the formation of electron space charges within the organic ETLs may be assisting hole injection in the quantum dot layer, thus helping to reduce leakage. The findings highlight the importance of layer interface engineering and leakage control for achieving higher EQE in QLEDs, and present strategies for the effective utilization of organic ETLs in them.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Women in Emerging Organic and Hybrid Electronic Materials and Interfaces","authors":"Francesca Santoro, Thuc-Quyen Nguyen, Luisa Petti","doi":"10.1002/aelm.202500382","DOIUrl":"10.1002/aelm.202500382","url":null,"abstract":"<p>The joint special issue “Women in Emerging Organic and Hybrid Electronic Materials and Interfaces” celebrates the scientific excellence, creativity, and leadership of women researchers at the forefront of organic and hybrid electronics. Launched in honor of the International Day of Women and Girls in Science, this initiative presents a compelling collection of original research and perspectives that exemplify the rigor, imagination, and interdisciplinary spirit of women-led work across materials science, physics, chemistry, and biology.</p><p>This editorial presents a selection of recent publications selected for the Advanced Electronic Materials audience with a focus on bioelectronics, energy systems, and optoelectronics. Here, in the area of hydrogel engineering, Zhan et al. (202400214) report the synthesis of stretchable, self-healing hydrogels with integrated electrical conductivity and antibacterial properties. These materials are designed for use in soft robotics and bioelectronic sensors. Finster et al. (202400763) complement this with a review of data-driven methods, highlighting the role of computational tools and machine learning in guiding hydrogel formulation for tissue engineering and biosensing applications. Moving to plant bioelectronics, Allarà et al. review (202500080) the functional use of nanomaterials in agriculture, focusing on nutrient delivery and stress resistance. Toward engineering of new materials and device architectures, organic electrochemical transistors (OECTs) are the focus of work by Priyadarshini et al. (202400681) and Simotko et al. (202500085). Both papers propose novel strategies for modulating transistor behavior through material design, expanding their application range in bioelectronics. The work by Ramirez et al. (202500123) is instead focused on OECT facilitating fabrication processes through inkjet printable semiconducting inks development. In polymer synthesis, Lin et al. (202400756) present a series of semiconducting polymers that combine mechanical flexibility with preserved electrical performance, supporting their integration in wearable electronics.</p><p>Energy storage advances are demonstrated by Skorupa et al. (202400761) and Alemdag et al (202400818); both highlight scalable approaches to enhancing electrode performance using structured layers and machine learning.</p><p>Photodetector and sensing applications are addressed in papers by Prescimone et al. (202400762), Macchia et al. (202400908), and Seo et al. (202400816), each presenting device-level innovations for infrared light detection or rapid bioanalytical diagnostics. Additionally, Allarà (202500073) et al. introduce conjugated polymer nanoparticles for use in biophotonic applications, combining visible absorption with NIR emission for potential sensing and therapeutic uses. Biocompatibility and biofunctionality are further explored by Polz et al. (202400899), confirming the non-cytotoxic behavior of PM6:Y6 photovoltaic films in physi","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500382","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Progress in Sub-10 Nm Nanofabrication for Scaling Down 2D Transistors","authors":"Haichuan Li,&nbsp;Yongyu Wu,&nbsp;Dawei Gao,&nbsp;Kai Xu,&nbsp;Kun Ren,&nbsp;Dianyu Qi","doi":"10.1002/aelm.202500306","DOIUrl":"10.1002/aelm.202500306","url":null,"abstract":"<p>2D field-effect transistors (2D-FETs) leverage atomically thin, dangling-bond-free channels to overcome short-channel effects and surface defects in sub-10 nm nodes. However, conventional lithography hardly meets the requirement of sub-10 nm nanofabrication because of resolution limits, making the fabrication of 2D-FETs with sub-10 nm channel lengths still a significant challenge. Here, strategies of realizing 2D-FETs are reviewed with sub-10 nm channels: i) Ultraprecise nanolithography, including electron-beam lithography, cold development, and block copolymers (BCP)-based directed self-assembly (DSA); ii) Nanogap formation, leveraging stress-induced cracking, grain-boundary widening, electromigration, carbon-nanotube masking, and shadow evaporation; iii) Vertical-channel architectures, where channel length is defined by dielectric thickness in metal–insulator–metal stacks or barristor structures; iv) Self-aligned isolation, employing ultrathin film oxidation, adhesion lithography, and heterostructure undercut processes to precisely define source-drain separations. Key performance metrics are compiled and compared—contact resistance, on-state current, off-state leakage, DIBL, and subthreshold swing—across representative devices, illustrating the robust scaling immunity of 2D materials. Finally, emerging “lab-to-fab” approaches are discussed, such as edge lithography, mechanical cracking, and post-pattern modification, pointing toward scalable, low-cost manufacturing of wafer-scale sub-10 nm 2D-FETs. This outlook provides practical guidelines for future integrated circuit implementations based on 2D semiconductors.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500306","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors","authors":"Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer","doi":"10.1002/aelm.202500310","DOIUrl":"https://doi.org/10.1002/aelm.202500310","url":null,"abstract":"Research on transistors with various architectures is crucial for developing high‐performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint. Simulation studies have shown that transistors fabricated using a U‐shape channel have a higher functionality as their natural geometry enables the realization of gate‐all‐around structures and long channel lengths within a small footprint. The experimental realization of the transistor is essential for exploring circuit applications. This paper presents the process integration route and the first experimental results of a U‐shape ambipolar Schottky barrier field effect transistor. Also, a detailed explanation of the challenges in fabricating a 3D transistor and the improvement steps are given. The fabricated device demonstrates highly symmetrical on‐currents for both p‐ and n‐branches. Self‐aligned contact formation and atomic force microscopy imaging are used to simplify fabrication and facilitate 3D structural monitoring. In addition, the formation of self‐aligned contacts in the proposed device architecture is significantly simplified compared to traditional 3D architectures. TCAD simulations are also performed to support the experimental findings and demonstrate the device's future potential and scalability. In conclusion, it effectively addresses the challenges of the fabrication of 3D transistors and drives innovations in device design with its silicon‐on‐insulator body.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies","authors":"Md Saifur Rahman, William J. Scheideler","doi":"10.1002/aelm.202500367","DOIUrl":"https://doi.org/10.1002/aelm.202500367","url":null,"abstract":"Liquid metal (LM) materials are redefining the design of soft and stretchable radio frequency (RF) devices by combining high electrical conductivity with mechanical reconfigurability. Recent advances demonstrate the use of LM in a wide range of RF components, including inductors, capacitors, antennas, and sensors, where geometry‐dependent electromagnetic properties enable new forms of wearable, bio‐integrated, and adaptive electronics. This review focuses on the underlying physics of RF loss in LM systems, including skin and proximity effects, magnetic and parasitic losses, and the influence of mechanical strain on resonant behavior. Beyond planar designs, emerging LM‐compatible fabrication methods such as freeze casting, 2.5D and 3D printing, and viscosity tuning are explored to construct conformal, high‐performance RF structures. Applications range from deformable Magnetic Resonance Imaging (MRI) coils and reconfigurable antennas to skin‐mounted wireless power transfer systems. The integration of LM with magnetic and dielectric materials to achieve multifunctional RF responses is also discussed. Finally, key opportunities in high‐frequency design, system‐level integration, and scalable soft manufacturing are outlined, positioning LM RF platforms as a versatile foundation for the next generation of communication, sensing, and biomedical technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-Driven Transfer Printing of Hyper-Stretchable Liquid Metal Electronics","authors":"Zhiyuan Ma, Yi Liu, Jian-Guan Hua, Yu Lei, Tao Wang, Lei Zhang, Ning Lin, Cuifang Kuang, Ruixiang Qu, Jin Huang, Yuan Jin, Biwei Deng","doi":"10.1002/aelm.202500244","DOIUrl":"https://doi.org/10.1002/aelm.202500244","url":null,"abstract":"Liquid metal (LM) alloys can conform to large deformations for flexible and stretchable electronics. The high surface energy and low wettability of LM hinder the binding with flexible substrates, making it difficult to precisely pattern LM-only electronic devices. Herein, a laser lift-off-and-fuse (LLOF) process is proposed for transfer printing LM onto flexible substrates with a patterning resolution of hundreds of microns. Liquid metal nanoparticles (LM NPs) from the donor substrate are transferred and subsequently activated on the receiver substrate by laser pulses, resulting in uniform, conductive patterns with arbitrary designs. Specifically, the LLOF method involves two steps: a transferring step by high-fluence laser pulses and an in situ activation step by low-fluence laser pulses. The LLOF method is additive and free of thermal or chemical damage to soft substrates. It brings superior quality and processability for high-precision LM flexible devices on stretchable substrates. Multiphysics numerical simulations provide a detailed demonstration of the transient vaporization of LM NPs and reveal a dynamic vapor-driven droplet transfer process. Finally, LM flexible devices with high conductivity, large ultimate strain, excellent fatigue resistance, and controllable strain conductivity are demonstrated, respectively.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"85 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145103636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}