Advanced Electronic Materials最新文献

{"title":"Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices","authors":"WenBin Liu,&nbsp;Lifang Hu,&nbsp;RuoXuan Zhao,&nbsp;ZhiYong Hou,&nbsp;JinYu Tian","doi":"10.1002/aelm.202500037","DOIUrl":"10.1002/aelm.202500037","url":null,"abstract":"<p>This study investigates the electrical properties of the SnO₂/SnS₂ heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH₄)₄Sn₂S₆ is used as a source for the production of the heterojunction. The results indicate that as the annealing temperature increases, the composition of the SnS₂ based thin film changes while the cycle-to-cycle stability of the device improved. The thin film is examined by X-ray photoelectron spectroscopy (XPS), scanning electronic microscopy (SEM) and atomic force microscopy (AFM), which proves the formation of SnO₂/SnS₂ heterojunction. Devices with SnO₂/SnS₂ heterojunction exhibited lower operating voltages and more uniform resistive switching behavior. The RRAM can be repeatedly and consistently switched between a high-resistance state and a low-resistance state over 1000 cycles, with a long data retention time of &gt; 4 × 10⁴ s at room temperature. Meanwhile, this study explores the relationship between this type of resistive memory and the neuromorphic simulation of the human brain. SnO₂/SnS₂ heterojunction with 224 PJ set power at 0.4 V pulse shows excellent resistive memory characteristics. This study provides a vital reference for high-performance and long-lifespan heterojunction memory devices.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500037","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural Information Processing and Time-Series Prediction with Only Two Dynamical Memristors","authors":"Dániel Molnár,&nbsp;Tímea Nóra Török,&nbsp;János Volk,&nbsp;Roland Kövecs,&nbsp;László Pósa,&nbsp;Péter Balázs,&nbsp;György Molnár,&nbsp;Nadia Jimenez Olalla,&nbsp;Zoltán Balogh,&nbsp;János Volk,&nbsp;Juerg Leuthold,&nbsp;Miklós Csontos,&nbsp;András Halbritter","doi":"10.1002/aelm.202500353","DOIUrl":"10.1002/aelm.202500353","url":null,"abstract":"<p>Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical properties of memristors, such as the tailorable response times arising from the exponential voltage dependence of the resistive switching speed remain largely unexploited. Here, an information processing scheme which fundamentally relies on the latter is proposed. Simple dynamical memristor circuits capable of solving complex temporal information processing tasks are realized. A scheme is presented in which a single non-volatile meristor and a series resistor can perform temporal pattern recognition tasks, such as the discrimination of sub-threshold and super-threshold voltage pulses, or the identification of neural spikes buried in high noise. By coupling to an oscillator circuit of a volatile Mott memristor, a complete neural circuit is realized that fires an output pulse upon signal detection and resets itself in a fully autonomous manner. Furthermore, a time series prediction circuit is implemented using a dynamic layer of only two memristors and a readout layer based on the linear combination of their output signals. This scheme can learn the operation of an external dynamical system and predict its output with high accuracy.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500353","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145182839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarons in DPP Polymers – How Glycol Side Chains and Elongated Conjugated Backbone Influence the Formation and Transport","authors":"Katherine Stewart,&nbsp;Ellasia Tan,&nbsp;Jingwan Kim,&nbsp;Yun-Hi Kim,&nbsp;Ji-Seon Kim","doi":"10.1002/aelm.202500731","DOIUrl":"10.1002/aelm.202500731","url":null,"abstract":"<p>Understanding polaron formation in conjugated polymers is critical for advancing solid-state organic electronics. Here, we investigate diketopyrrolopyrrole (DPP)-based polymers with tailored side chains to elucidate the impact of glycolation on charge transport and polaron formation. We demonstrate that glycol side chains enhance p-type character and charge carrier density, while backbone elongation improves planarity and mobility. Electrochemical doping using a semicrystalline solid-state ionic liquid (SSIL) can increase conductivity by four orders of magnitude. In situ field-dependent Raman spectroscopy probes polaron formation, showing increased π-electron redistribution in glycolated DPP. Polaron formation of the DPPT-T conjugated backbone shows a more localised polaron with structural changes to the thiophene donor unit. Backbone elongation results in greater polaron delocalisation with lower reorganisation energy. Finally, ion-gel gated organic synaptic transistors (IGOSTs) demonstrate significant performance gains for glycolated polymers with gDPPT-T and gDPPT-TVT exhibiting strong excitatory post-synaptic currents. The more facile polaron formation pathway for gDPPT-TVT offers a significant advantage in the dynamics of ion migration and retention. This work provides molecular-level insight into the incorporation of glycol side chains to high-performance conjugated polymers for solid-state applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500731","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Progress and Opportunities in Oxide Semiconductor Devices for In-Memory and Neuromorphic Computing","authors":"Suwon Seong,&nbsp;Taejun Ha,&nbsp;Sangwook Jung,&nbsp;Wontae Jeong,&nbsp;Yoonyoung Chung","doi":"10.1002/aelm.202500521","DOIUrl":"10.1002/aelm.202500521","url":null,"abstract":"<p>The increasing complexity of artificial intelligence has exposed critical limitations of conventional von Neumann architectures, particularly in terms of data transfer bottlenecks and high energy consumption. Consequently, alternative paradigms such as in-memory and neuromorphic computing have attracted significant attention. Oxide semiconductors, which have achieved commercial success in the display industry, have recently garnered significant attention for neuromorphic computing applications due to their unique properties, including extremely low leakage current, low processing temperatures, and excellent compatibility with back-end-of-line integration with conventional silicon circuits. This review discusses recent advancements and challenges in oxide semiconductor-based devices for in-memory and neuromorphic computing. It explicitly addresses multilevel memory devices optimized for analog multiply-accumulate operations, highlighting key trade-offs among retention, endurance, operational speed, and energy efficiency. Neuromorphic synaptic devices utilizing oxide semiconductors are highlighted for their effective emulation of synaptic behaviors for spiking neural networks. Additionally, recent developments in optoelectronic neuromorphic systems and reservoir computing using oxide semiconductors are presented, along with insights into emerging device structures and future opportunities for 3D integration to maximize computing efficiency.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500521","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145801269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D-Printed Supramolecular Eutectogels—Tunable Conductive Wires for Soft Electric Circuits","authors":"Tajmon T. Vadukoote,&nbsp;Nathaniel Craft,&nbsp;Alyssa-Jennifer Avestro,&nbsp;David K. Smith","doi":"10.1002/aelm.202500884","DOIUrl":"10.1002/aelm.202500884","url":null,"abstract":"<p>Supramolecular eutectogels based on 1,3:2,4-dibenzylidenesorbitol (DBS) derivatives as low-molecular-weight gelators (LMWGs) are 3D-printed via wet-spinning. Solubility and assembly kinetics play key roles in LMWG printability in a deep eutectic solvent (DES), a process facilitated by the addition of water. On drying, the printed gels lose some water content, reaching a stable composition for optimal, reproducible electronic properties. The printed supramolecular eutectogels have high conductivities of ca. 5.0 mS/cm, enabling them to be used as soft conductive wires in simple electronic circuits. Furthermore, depending on LMWG structure, they can be selectively reacted with Au(III) and loaded with gold nanoparticles, demonstrating the tunability of this supramolecular approach at the molecular scale. The ability to print functional conductive gels with curved and flexible structures indicates the potential of LMWG eutectogels in the fabrication of soft electronic circuitry with future applications in bionanoelectronics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500884","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Proximity Ferroelectricity in Compositionally Graded Structures","authors":"Eugene A. Eliseev,&nbsp;Anna N. Morozovska,&nbsp;Sergei V. Kalinin,&nbsp;Long-Qing Chen,&nbsp;Venkatraman Gopalan","doi":"10.1002/aelm.202500661","DOIUrl":"10.1002/aelm.202500661","url":null,"abstract":"<p>Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material, such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed in direct contact with a thin switchable ferroelectric layer (such as Al_1-xSc_xN or Zn_1-xMg_xO), they become a practically switchable ferroelectric. Using the thermodynamic Landau-Ginzburg-Devonshire theory, in this work, we perform the finite element modeling of the polarization switching in the compositionally graded AlN-Al_1-xSc_xN, ZnO-Zn_1-xMg_xO, and MgO-Zn_1-xMg_xO structures sandwiched in both a parallel-plate capacitor geometry as well as in a sharp probe-planar electrode geometry. We reveal that the compositionally graded structure allows the simultaneous switching of spontaneous polarization in the whole system by a coercive field significantly lower than the electric breakdown field of unswitchable polar materials. The physical mechanism is the depolarization electric field determined by the gradient of chemical composition “x”. The field lowers the steepness of the switching barrier in the otherwise unswitchable parts of the compositionally graded AlN-Al_1-xSc_xN and ZnO-Zn_1-xMg_xO structures. In the MgO-like regions of the compositionally graded MgO-Zn_1-xMg_xO structure, a shallow double-well free energy potential emerges. Proximity ferroelectric switching of the compositionally graded structures placed in the probe-electrode geometry occurs due to nanodomain formation under the tip. We predict that a gradient of chemical composition “x” significantly lowers effective coercive fields of the compositionally graded AlN-Al_1-xSc_xN and ZnO-Zn_1-xMg_xO structures compared to the coercive fields of the corresponding multilayers with a uniform chemical composition in each layer. A tip-induced switching further lowers the coercive field, enabling control of ferroelectric domains in otherwise unswitchable compositionally graded structures, which can provide nanoscale domain control for memory, actuation, sensing, and optical applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500661","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene","authors":"Md. Ibrahim Kholil,&nbsp;Alexey Lipatov,&nbsp;Saman Bagheri,&nbsp;Hanna Pazniak,&nbsp;Venera Alimova,&nbsp;Alexander Sinitskii","doi":"10.1002/aelm.202500422","DOIUrl":"10.1002/aelm.202500422","url":null,"abstract":"<p>We present a synthetic procedure for large Ti₂CT<i>_x</i> MXene monolayers with the majority of flakes having sizes of 10–15 µm and the largest ones reaching 40 µm, which are used for device fabrication and electrical measurements on a single-flake level. We demonstrate that if exposed to ambient conditions, Ti₂CT<i>_x</i> monolayers oxidize in an aqueous solution or on a substrate on a time scale of hours, but multilayer flakes are more resistant to environmental degradation. The partially oxidized monolayer Ti₂CT<i>_x</i> flakes exhibit low electrical conductivity and electron mobility, as well as the semiconducting-like temperature dependence of resistance with d<i>R</i>/d<i>T</i> &lt; 0. However, the more degradation-resistant multilayer flakes show electrical conductivity of about 3700 S cm⁻¹ and electron mobility of about 1.6 cm² V⁻¹ s⁻¹, which are among the highest values reported for MXene materials, as well as the metallic temperature dependence of resistance with d<i>R</i>/d<i>T</i> &gt; 0, which is expected for Ti₂CT<i>_x</i> with mixed surface terminations (T<i>_x</i> = ─F, ─OH, = O) based on prior theoretical calculations. These results correlate with the electrical measurements of Ti₂CT<i>_x</i> films, which showed that the thicker films exhibit better environmental stability. The characteristics of multilayer flakes suggest high intrinsic electrical conductivity of Ti₂CT<i>_x</i> and justify its potential for electronic applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500422","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ReRAM/CMOS Array Integration and Characterization via Design of Experiments","authors":"Imtiaz Hossen,&nbsp;William A. Borders,&nbsp;Advait Madhavan,&nbsp;Shweta Joshi,&nbsp;Patrick M. Braganca,&nbsp;Jabez J. McClelland,&nbsp;Brian D. Hoskins,&nbsp;Gina C. Adam","doi":"10.1002/aelm.202500203","DOIUrl":"10.1002/aelm.202500203","url":null,"abstract":"<p>No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance. However, in an array each device needs to be measured in similar operating settings. Therefore, it is necessary to find the optimal settings where most devices will have the best performance across the entire array population. Traditional sampling methods require a large number of tests within an experimental space, which is time-intensive and resource-draining. As an alternative, this study proposes the adoption of the Latin square method under the Design of Experiments (DoE) framework for the characterization and performance optimization of arrays of ReRAM devices. This innovative approach drastically reduces the number of experimental tests, thereby offering a faster way to discern the impact of each factor and fine-tune device parameters effectively. The core objective of employing this DoE technique is to harness its potential for optimizing parameters that significantly enhance the ON/OFF ratio and endurance of ReRAM devices. The optimization technique, performed on a CMOS-integrated 20 k array of ReRAM devices, increases the device yield by ≈84%, compared to the previous integration with an unoptimized technique.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500203","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epitaxial Growth of p-Type β-Ga2O3 Thin Films and Demonstration of a p–n Diode","authors":"Chuang Zhang,&nbsp;Hanzhao Song,&nbsp;Chee Keong Tan","doi":"10.1002/aelm.202500719","DOIUrl":"10.1002/aelm.202500719","url":null,"abstract":"<p><i>β</i>-Ga₂O₃, with its ultrawide bandgap (∼4.9 eV) and well-established n-type conductivity, is a promising semiconductor for next-generation power electronics. However, the realization of stable <i>p</i>-type doping remains a fundamental challenge owing to the deep-acceptor levels of conventional dopants. Here, a Te–Mg co-doping strategy is developed via metal–organic chemical vapor deposition (MOCVD) to overcome this limitation. The co-doped films exhibit a room-temperature resistivity of 32.4 Ω·cm, a Hall hole concentration of 1.78 × 10¹⁷ cm⁻³, and mobilities up to 5.29 cm² V⁻¹ s⁻¹ at lower carrier concentrations (5.72 × 10¹⁴ cm⁻³). A preliminary p–n diode is successfully demonstrated. Density functional theory (DFT) calculations reveal that Te incorporation introduces an intermediate band near the valence band maximum (VBM), effectively reducing the Mg acceptor ionization energy. Spectroscopic analyses further confirm VBM elevation through Te–Ga orbital hybridization and a Fermi-level shift toward the valence band, consistent with p-type behavior. These results establish a viable route for achieving <i>p</i>-type <i>β</i>-Ga₂O₃ homoepitaxy and lay the groundwork for future optimization toward sub-1 Ω·cm resistivity and a deeper understanding of the Te–Mg doping mechanism, paving the way for bipolar device applications in ultrawide-bandgap electronics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500719","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147448189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene (Adv. Electron. Mater. 7/2026)","authors":"Md. Ibrahim Kholil,&nbsp;Alexey Lipatov,&nbsp;Saman Bagheri,&nbsp;Hanna Pazniak,&nbsp;Venera Alimova,&nbsp;Alexander Sinitskii","doi":"10.1002/aelm.70327","DOIUrl":"10.1002/aelm.70327","url":null,"abstract":"<p><b>Metallic Ti₂CT_<i>x</i> MXene</b></p><p>This cover image presents the synthesis and electrical characterization of large (up to 40 μm) flakes of Ti₂CT_<i>x</i> MXene. Monolayer flakes degrade rapidly under ambient conditions, leading to semiconducting-like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced environmental stability and high metallic conductivity (∼3700 S cm⁻¹). More information can be found in the Research Article by Alexey Lipatov, Alexander Sinitskii, and co-workers (10.1002/aelm.202500422).\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70327","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147683298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}