Advanced Electronic Materials最新文献

{"title":"High-Performance Conductive Elastomers Based on Deep Eutectic Solvents and Polyvinyl Alcohol for Flexible Monitoring Sensors","authors":"Pinwen Wang, Shouhua Han, Zhipeng Hou, Sihang Ren, Muxin Zhao, Liqun Yang","doi":"10.1002/aelm.202400937","DOIUrl":"https://doi.org/10.1002/aelm.202400937","url":null,"abstract":"The rapid advancement of wearable technology has led to the growing significance of flexible sensors in medical health monitoring and motion tracking. Traditional electronic skin frequently experiences unstable sensing performance attributed to inadequate interface compatibility and uneven distribution of conductive materials. Ionic skin presents an innovative method for acquiring biological signals via ion migration; however, its biocompatibility concerns restrict its broader use. This study introduces an eco-friendly and efficient synthetic method for the preparation of conductive elastomers utilizing deep eutectic solvents (DES) and polyvinyl alcohol (PVA). The resulting composite polymer network structure demonstrates a balance between elevated mechanical strength and high conductivity. The resultant material exhibits an electrical conductivity of 4.4 × 10⁻¹ S m⁻¹ and a tensile strain of 1200%. The attributes of this elastomer allow pressure sensors to demonstrate exceptional performance, featuring a sensitivity of 0.21 kPa⁻¹ and a wide detection range of 0–200 kPa. This research presents a novel approach for the development of high-performance flexible sensing materials, which hold considerable application potential in areas including healthcare and motion detection.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"93 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143905514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism of Fixed Pattern Noise of Micro-Channel Plate Focusing on Cross-Section of Single Channel","authors":"Dongyu Jiang, Yonggang Huang, Guanlin Li, Yuwen Xing, Peng Jiao, Yajie Du, Tiezhu Bo, Jing Ma, Hui Liu, Jinsheng Jia","doi":"10.1002/aelm.202400868","DOIUrl":"https://doi.org/10.1002/aelm.202400868","url":null,"abstract":"Fixed Pattern Noise (FPN) of MCP significantly influences resolution and clarity of detected images. This investigation focuses on the cross-section of single channel to clarify the formation mechanism of FPN. The cross-section is obtained by microscopic observation of circular MCP samples, and the FPN is measured. Circular and defective cross-sections, as well as regular polygonal and rectangular cross-sections are modeled. The shortest distance through the center of the cross-section is proposed as an index to characterize length-to-diameter ratio(L/D). The gain, escape dynamics of multiplied electrons from the output end and electron beam spot shape on phosphor screen are simulated. Results indicate that defective circulars are equal in cross-sectional area. As the bias voltage increases, the electron gain increases. The higher the roundness and the shortest distance through the center of cross-section, the higher the gain and the spreading angle of emitted electron beam. The electron emission trajectory at the output end of MCP and beam spot shape on phosphor screen varies with the cross-section. Deformation of boundary micropores in the multi-fiber decreases gain, resulting in dark-grid fixed pattern noise. With higher bias voltage, the L/D of boundary micropores increases gain, leading to bright-grid fixed pattern noise.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143905516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Hardened Infrared Photodetectors Based on a Narrow Bandgap Conjugated Polymer Semiconductor","authors":"Anthony R. Benasco, Chih‐Ting Liu, Bernie Rax, Giacomo Mariani, Steve McClure, Tyler Bills, Sanyukta Datta Gupta, Mohammad I. Vakil, Stefan Nikodemski, Jarrett H. Vella, Jason D. Azoulay","doi":"10.1002/aelm.202400918","DOIUrl":"https://doi.org/10.1002/aelm.202400918","url":null,"abstract":"Space missions critically rely on sensors that operate throughout the near‐ to longwave infrared (NIR – LWIR, λ = 0.9–14 µm) regions of the electromagnetic spectrum. These sensors capture data beyond the capabilities of traditional optical tools and sensors, critical for the detection of thermal emissions, conducting atmospheric studies, and surveillance. However, conventional NIR‐LWIR detectors depend on bulky, cryogenically cooled semiconductors, making them impractical for broader space‐based applications due to their high cost, size, weight, and power (C‐SWaP) demands. Here, an IR photodetector using a solution‐processed narrow bandgap conjugated polymer is demonstrated. This direct bandgap photoconductor demonstrates exceptional infrared sensitivity without cooling and has minimal changes in figures‐of‐merit after substantial ionizing radiation exposure up to 1,000 krad – equivalent to three years in the most intense low Earth orbit (LEO). Its performance and resilience to radiation notably surpass conventional inorganic detectors, with a 7.7 and 98‐fold increase in radiation hardness when compared to epitaxial mercury cadmium telluride (HgCdTe) and indium gallium arsenide (InGaAs) photodiodes, respectively, offering a more affordable, compact, and energy‐efficient alternative. This class of organic semiconductors provides a new frontier for C‐SWaP optimized IR space sensing technologies, enabling the development of new spacecraft and missions with enhanced observational capabilities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"95 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143901501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Using Highly Functional Cr2O3 Interfacial Layer to Enhance the Electrical Performance of Au/InP Schottky Diodes","authors":"Sreedhar Gari Sai Krupa, Dandala Surya Reddy, Ambadi Lakshmi-Narayana, Varra Rajagopal Reddy, Chintalapalle V. Ramana","doi":"10.1002/aelm.202500050","DOIUrl":"https://doi.org/10.1002/aelm.202500050","url":null,"abstract":"Herein, the significant impact of the spin-coated Cr₂O₃ interface layer on the electrical properties and performance characteristics of Au/undoped-InP (Au/InP) Schottky diodes (SD) is reported. The material characterization of spin-coated Cr₂O₃ films using a wide variety of analytical techniques, namely, atomic force microscopy, field emission scanning electron microscope, X-ray diffraction, Fourier transform infrared spectroscopy, and Raman spectroscopy, indicate the formation of hexagonal phase, nanocrystalline, and stoichiometric Cr₂O₃ on InP. Optical absorption measurements reveal a bandgap of ≈3.5 eV. In-depth analyses and detailed measurements of current-voltage (<i>I</i>–<i>V</i>) and capacitance-voltage (C-V) employed to assess the interface characteristics and electrical performance of the Au/InP (SD) versus Au/Cr₂O₃/InP (MIS) devices. Compared to SD, MIS revealed superior rectifying properties. Indicating that the Cr₂O₃ interface layer significantly influences the barrier height (Φ_BH) of SD, the estimated Φ_BH (0.64 eV (<i>I</i>–<i>V</i>)/0.86 eV (C-V)) is higher than that of SD (0.57 eV (<i>I</i>–<i>V</i>)/0.67 eV (C-V)). In addition, Cheungs and Nordes' methods are used to obtain the Φ_BH, ideality factor (n), and series resistance (R_S). The equivalent Φ_BH values obtained from current–voltage, Cheungs, and Nordes methods demonstrate stability and dependability in addition to validating their superior characteristics of MIS devices. The interface state density (N_SS) for MIS is lower than the SD's, indicating that the effectiveness of Cr₂O₃ layer significantly reduces N_SS. Analyses to probe the mechanism demonstrate that, in SD and MIS, the Schottky emission controls the higher bias area, while the Poole-Frenkel emission dominates the reverse conduction mechanism at the lower bias region. The present work convincingly demonstrates the potential application of the Cr₂O₃ interfacial layer in delivering the enhanced performance and contributes to the progression of electrical devices for emerging electronics and energy-related applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143897553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum Transport in SnTe Nanowire Devices","authors":"Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis, Vince van de Sande, Xin Guan, Hans Bolten, Marcel A. Verheijen, Chuan Li, Joost Ridderbos, Erik P.A.M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg","doi":"10.1002/aelm.202500027","DOIUrl":"https://doi.org/10.1002/aelm.202500027","url":null,"abstract":"A variety of quantum transport experiments are reported in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to their high surface‐to‐volume ratio that suppresses the bulk contribution to the conductance. A low‐resistance and a high‐resistance regime are observed. The highly resistive devices display semiconducting and quantum dot behavior caused by microscopic differences in the fabrication, while devices with low resistance show partial superconductivity when in a hybrid superconductor‐nanowire configuration or Fabry‐Pérot oscillations. The latter suggests quantum interference in a ballistic transport channel, attributed to the 2D surface states in SnTe. The wide variety of quantum transport phenomena demonstrate SnTe nanowires as a promising platform for diverse follow‐up experiments and novel device architectures, including the exploration of topological superconductivity and the development of low‐energy spintronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143893598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Weyl Fermion Manipulation Through Magnetic Transitions in the Ferromagnetic Non‐Centrosymmetric Weyl Semimetal PrAlSi","authors":"Kaipu Wang, Wujun Shi, Weizheng Cao, Xiaotian Yang, Zhengyang Lv, Cheng Peng, Cheng Chen, Defa Liu, Haifeng Yang, Lexian Yang, Meng Lyu, Peijie Sun, Enke Liu, Mao Ye, Yulin Chen, Yan Sun, Yanpeng Qi, Zhongkai Liu","doi":"10.1002/aelm.202500044","DOIUrl":"https://doi.org/10.1002/aelm.202500044","url":null,"abstract":"PrAlSi, a non‐centrosymmetric ferromagnetic Weyl semimetal candidate with a Curie temperature of 17.8K, offers a unique platform for exploring the interplay of symmetry breaking and topological electronic structures. Up to now, the Weyl fermion distribution as well as their evolution across the ferromagnetic to paramagnetic phase transition in PrAlSi has not been explored. Here, the presence of Weyl fermions is uncovered in PrAlSi and demonstrates that they can be manipulated through the magnetic phase transition. The ab‐initio calculations indicate a shift in the momentum and energy positions of Weyl fermions, alongside an increase in Weyl point numbers due to band splitting. The predicted band splitting and shifting of Weyl fermions are corroborated by the angle‐resolved photoemission spectroscopy experiments. Such manipulation of Weyl fermions leads to the appearance of a net chirality charge and a significant modulation in optical conductivity, as proposed by the calculations. The research presents a novel method for adjusting the properties of Weyl semimetals by controlling Weyl fermions through magnetic phase transitions, positioning PrAlSi as a model system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143893599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation","authors":"Dongmin Kim, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Pendar Azaripour Masouleh, Jisung Lee, Joonhyun Kwon, Chul‐Heung Kim, Hyunsang Hwang","doi":"10.1002/aelm.202400881","DOIUrl":"https://doi.org/10.1002/aelm.202400881","url":null,"abstract":"As encryption demands at the edges grow, volatile switching devices have emerged as promising candidates for entropy sources because of their inherent stochastic properties, offering fast, energy‐efficient operation and a minimal footprint. Although most studies have focused on exploiting inherent stochasticity, efforts to analyze and optimize these devices to enhance their randomness remain scarce. In this study, the stochastic switching characteristics of Ovonic Threshold Switch (OTS) devices by controlling the first firing temperatures to amplify their inherent stochasticity are explored. It is demonstrated that firing at cryogenic temperatures (77 K) induces field‐dominant firing and a considerable increase in traps within the device. These additional traps lead to a substantial enhancement in switching variability, with the switching time fluctuation increasing up to four times compared to the first firing temperature of 298 K. Furthermore, a reference‐free entropy‐harvesting method is proposed that ensures robust and stable operation even under cycling degradation. Based on this approach, the OTS devices that undergo first firing at cryogenic temperatures achieve stable entropy generation at speeds exceeding 20 Mbit s<jats:sup>−1</jats:sup>. This study demonstrates the potential of optimizing OTS devices to satisfy the increasing demand for fast and energy‐efficient entropy sources in advanced cryptographic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143893597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Enhanced p-Type Performance of Back-Gated WS2 Devices","authors":"Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño-Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz","doi":"10.1002/aelm.202500079","DOIUrl":"https://doi.org/10.1002/aelm.202500079","url":null,"abstract":"In this work, a scalable technique is presented for the direct growth of tungsten disulfide (WS₂) utilized in back-gated field-effect transistors (FETs), demonstrating robust and persistent p-type behavior across diverse conditions. Notably, this p-type behavior is consistently observed regardless of the metal contacts, semiconductor thickness, or ambient conditions, and remains stable even after high-vacuum and high-temperature annealing. Electrical characterization reveals negligible Fermi-level pinning at the conduction band edge, with minimal Schottky barrier heights for hole carriers below 180 mV and a well-defined thermionic transport regime. The devices exhibit field-effect mobilities with a clear back-gate dependence, reaching values up to 0.1 cm²V⁻¹s⁻¹. Temperature-dependent transport analysis indicates that charge carrier mobility is predominantly limited by impurity scattering and Coulomb interactions. First-principles simulations corroborate that the persistent p-type behavior could be driven by the presence of tungsten vacancies or WO₃ oxide species. This study highlights the potential of WS₂ for scalable integration into advanced p-type electronic devices and provides critical insights into the intrinsic mechanisms governing its charge transport properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"274 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Physics-Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures","authors":"Ella Paasio, Rikhard Ranta, Sayani Majumdar","doi":"10.1002/aelm.202400840","DOIUrl":"https://doi.org/10.1002/aelm.202400840","url":null,"abstract":"Binary oxide ferroelectrics like doped HfO₂, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic technologies. However, there is no single model for doped hafnia systems that can explain physical properties of the system while being circuit simulation compatible and computationally efficient. It is presented physics-based compact modelling based on the Jiles-Atherton equations to reproduce experimentally measured polarization switching in ferroelectric thin film capacitors under different electric field and temperature conditions. Additionally, device-to-device variation effect on the model parameters is presented, which will enable large-scale integration of the FE components to complex functional circuits. Due to increasing interest in cryogenic electronics for quantum computing and space technologies, effect of temperatures on polarization switching is investigated down to 4 K. It is shown the model can reproduced the experimental polarization-voltage relation of Hafnium Zirconium Oxide capacitors with nearly 100% accuracy, for different electric fields and temperatures down to 4 K, including analog switching. It is find cooling the devices below 100 K increases polarization update linearity and symmetry significantly. This results represent an important advancement toward application of ferroelectric capacitors for large-scale memory and neuromorphic circuits operating down to deep cryogenic temperatures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"94 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultralow Electrical Current Driven Field-Free Spin-Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators","authors":"Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu","doi":"10.1002/aelm.202500022","DOIUrl":"https://doi.org/10.1002/aelm.202500022","url":null,"abstract":"Spin-orbit torque-driven magnetic random-access memory (SOT-MRAM) is one of the promising candidates for next-generation memory technologies beyond Moore's law. Due to its separation of writing and reading channels, the 3-terminal device design significantly improves the device endurance of SOT-MRAM. However, two major challenges still exist for the perpendicular SOT-MRAM: the ultrahigh writing current density and the need for an external magnetic field to achieve deterministic switching. In this work, a 3-terminal SOT-MRAM device is demonstrated that integrates topological insulators (TIs) by perpendicular magnetic tunnel junction (pMTJ). The giant spin-orbit torque generated by spin-momentum-locked topological surface states significantly reduces the switching current density to as low as 3.0 × 10⁵ A cm⁻². The double magnetic layers with different saturation magnetizations are employed as the recording layer of TIs-pMTJ. Therefore, non-collinear canted magnetic states are generated during the current-driven SOT. By breaking the chiral symmetry of these states through interlayer Dzyaloshinskii–Moriya interaction (DMI), the field-free deterministic SOT switching is achieved. This work demonstrates the topological insulator-driven magnetic field-free SOT-MRAM with ultralow writing density, inspiring the revolution of SOT-MRAM technology from classical to quantum materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}