Advanced Electronic Materials最新文献

{"title":"Experimental Evidence of Electron-enhanced Interfacial Thermal Conductance Through Two-Dimensional Electron Gas","authors":"Xing Fan,&nbsp;Yi Tao,&nbsp;Wangwei Zhang,&nbsp;Chen Li,&nbsp;Bingxin Li,&nbsp;Ziyuan Ma,&nbsp;Zhiming Geng,&nbsp;Xue-Jun Yan,&nbsp;Ming-Hui Lu,&nbsp;Di Wu,&nbsp;Deyu Li,&nbsp;Hong Lu,&nbsp;Yan-Feng Chen","doi":"10.1002/aelm.202400931","DOIUrl":"10.1002/aelm.202400931","url":null,"abstract":"<p>It has been a persistent challenge to experimentally distinguish the contribution of electron-phonon coupling on interfacial thermal conductance from phonon-dominated pathways. The LaAlO₃/SrTiO₃ (LAO/STO) interface offers a unique platform to address this, at which two-dimensional electron gas (2DEG) can be formed or absent depending on whether the LAO is terminated by TiO₂ or SrO during the growth, and enables a direct comparison of thermal transport with and without interfacial free electrons. Using time-domain thermoreflectance measurements, it is demonstrated that the interfacial thermal conductance is enhanced by 35–40% in the 2DEG-active interface compared to its 2DEG-free counterpart. This enhancement provides direct experimental evidence of electron-phonon coupling as an additional thermal transport channel, distinct from phonon contributions. The extracted electron-phonon coupling coefficient (G≈10¹⁶ W m⁻³ K⁻¹) aligns with the first-principles predictions for oxide interfaces. Crucially, the results resolve the long-standing ambiguity in decoupling electronic and phononic thermal pathways, offering a generalizable framework to quantify electron-phonon interactions at metal-dielectric heterointerfaces.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400931","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors","authors":"Chen‐Han Chou, Han‐Yi Huang, Hsin‐Yuan Chiu, Guan‐Zhen Wu, Bo‐Heng Liu, Chien‐Wei Chen, Chi‐Chung Kei, Chao‐Hsin Chien","doi":"10.1002/aelm.202500231","DOIUrl":"https://doi.org/10.1002/aelm.202500231","url":null,"abstract":"Doping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT) leakage. In this work, the n‐type doping of CNTs is investigated using aluminum nitride (AlN) as the dopant material and present a tunable doping approach by incorporating various screening dielectric layers between CNTs and AlN. It is confirmed that the screening effect is the dominant factor governing doping strength and demonstrates tunable doping levels ranging from 0.26 to 0.89 nm<jats:sup>−1</jats:sup> by varying the screening materials and thickness. Furthermore, through the Wentzel–Kramers–Brillouin (WKB) approximation method, as the extension doping strength weakened from 0.75 to 0.45 nm<jats:sup>−</jats:sup><jats:sup>1</jats:sup>, the BTBT leakage current can be reduced from 19 to 1.2 nA/CNT, offering significant potential for future carbon‐based electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Advances in Bioresorbable Biomedical Applications: From Materials to Devices","authors":"Do Yun Park,&nbsp;Hye-Min Lee,&nbsp;Su-Hwan Kim,&nbsp;Youngmin Sim,&nbsp;Yoojin Kang,&nbsp;Gyu-rim Jang,&nbsp;Sara Kim,&nbsp;Kyeongha Kwon,&nbsp;Hanjun Ryu","doi":"10.1002/aelm.202400997","DOIUrl":"10.1002/aelm.202400997","url":null,"abstract":"<p>Wearable and implantable devices provide users with continuous monitoring and treatment, and bioresorbable features can facilitate the use of temporary biomedical devicesand reduce electronic wastes (e-wastes). Bioresorbable metals and polymers offer multiple benefits, such as high conductivity and mechanical support, for skin-interfaced and implantable biomedical devices in versatile biomedical applications. These materials dissolve naturally after their targeted lifetime, avoiding complications arising from retrieval surgeries and preventing e-waste accumulation. This review summarizes recent advances in both bioresorbable materials and devices, highlighting various polymers, semiconductors, and metal options along with their dissolution processes. The following contents introduce the current developments in bioresorbable skin-interfaced and implantable systems including electrostimulation (ES), energy harvesting, sensor, and transistor systems. A concluding section discusses current challenges and future research opportunities in this field.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400997","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal and Dimensional Stability of Photocatalytic Material ZnPS3 Under Extreme Environmental Conditions","authors":"Abhishek Mukherjee, Vivian J. Santamaría‐García, Damian Wlodarczyk, Ajeesh K. Somakumar, Piotr Sybilski, Ryan Siebenaller, Emmanuel Rowe, Saranya Narayanan, Michael A. Susner, L. Marcelo Lozano‐Sanchez, Andrzej Suchocki, Julio L. Palma, Svetlana V. Boriskina","doi":"10.1002/aelm.202500093","DOIUrl":"https://doi.org/10.1002/aelm.202500093","url":null,"abstract":"Zinc phosphorus trisulfide (ZnPS<jats:sub>3</jats:sub>), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. Its optical and structural properties are explored under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). The experimental results identify a pressure‐induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS<jats:sub>3</jats:sub> demonstrates robust stability across a broad pressure range up to 24.5 GPa. DFT calculations support these observations and further predict a semiconductor‐to‐semimetal transition at 100 GPa, while PL measurements reveal defect‐assisted emission that quench under pressure due to enhanced non‐radiative recombination. At cryogenic temperatures, PL quenching intensifies as non‐radiative processes dominate, driven by a rising Grüneisen parameter and reduced phonon population. Cryogenic X‐ray diffraction (XRD) also reveals a high mean thermal expansion coefficient (TEC) of (4.369 ± 0.393) × 10<jats:sup>−5</jats:sup> K<jats:sup>−1</jats:sup>, among the highest reported for 2D materials. This unique combination of tunable electronic properties under low pressure and high thermal sensitivity makes ZnPS<jats:sub>3</jats:sub> a strong candidate for sensing applications in extreme environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain‐Induced Polarization Rotation in Freestanding Ferroelectric Oxide Membranes","authors":"Alban Degezelle, Razvan Burcea, Pascale Gemeiner, Maxime Vallet, Brahim Dkhil, Stéphane Fusil, Vincent Garcia, Sylvia Matzen, Philippe Lecoeur, Thomas Maroutian","doi":"10.1002/aelm.202500266","DOIUrl":"https://doi.org/10.1002/aelm.202500266","url":null,"abstract":"Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e., piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weigh their respective contributions for a given membrane geometry, the strain profile has to be mapped with respect to the ferroelectric polarization landscape, a necessary step to allow for a controlled tailoring of the latter. In this study, the effect of bending strain on a Pb(Zr,Ti)O<jats:sub>3</jats:sub> membrane is examined in a fold‐like structure, observing a polarization rotation from out‐of‐plane to in‐plane at the fold apex. Combining piezoresponse force microscopy, Raman spectroscopy, and scanning transmission electron microscopy, the ferroelectric polarization direction is mapped relative to the height profile of the membrane and the contributions of strain and strain gradients for this archetypal fold geometry are discussed. These findings offer new insights into strain‐engineered polarization configurations and emphasize strain effects at the nanoscale to tune the functional properties in freestanding membranes beyond conventional electrical methods.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Full‐Color n‐i‐p Perovskite Light‐Emitting Diodes Based on SnO2","authors":"Jianhong Wu, Dongmin Qian, Ruishan Wang, Yuxiao Cai, Yangyang Guo, Fuyi Zhou, Xiaopeng Liang, Lin Zhu, Nana Wang, Yu Cao, Jianpu Wang","doi":"10.1002/aelm.202500313","DOIUrl":"https://doi.org/10.1002/aelm.202500313","url":null,"abstract":"Perovskite light‐emitting diodes (LEDs) have achieved their highest efficiency with an n‐i‐p device structure, utilizing n‐type ZnO as the electron transport layer. The exceptional device efficiency is highly dependent on the interfacial reaction between ZnO and perovskite intermediates, which promotes the formation of high‐quality perovskite films. However, achieving green and blue perovskite LEDs with this n‐i‐p device structure remains a challenge, which hinders the fabrication of full‐color perovskite LED arrays with a consistent device structure. This challenge stems from the vigorous interfacial reaction between ZnO and bromine/chlorine‐based perovskites compared to iodine‐based perovskites during the crystallization process. Here, n‐i‐p perovskite LEDs with enhanced device performance on a relatively stable n‐type SnO<jats:sub>2</jats:sub> layer are demonstrated. The near‐infrared perovskite LEDs based on SnO<jats:sub>2</jats:sub> reach a peak external quantum efficiency of 21.2%. More importantly, this approach enables the realization of full‐color n‐i‐p perovskite LEDs, offering significant potential for streamlining the manufacturing process of full‐color displays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Current Flow Mapping in Conducting Ferroelectric Domain Walls Using Scanning NV‐Magnetometry","authors":"Conor J. McCluskey, James Dalzell, Amit Kumar, J. Marty Gregg","doi":"10.1002/aelm.202500142","DOIUrl":"https://doi.org/10.1002/aelm.202500142","url":null,"abstract":"The electrical conductivity of parallel plate capacitors, with ferroelectric lithium niobate as the dielectric layer, can be extensively and progressively modified by the controlled injection of conducting domain walls. Domain wall‐based memristor devices result. Microstructures, developed as a result of partial switching, are complex, and so simple models of equivalent circuits, based on the collective action of all conducting domain wall channels acting identically and in parallel, may not be appropriate. Here, the current density in ferroelectric domain wall memristors is directly mapped in situ by mapping Oersted fields, using nitrogen vacancy center microscopy. Current density maps are found to directly correlate with the domain microstructure, revealing that a strikingly small fraction of the total domain wall network is responsible for the majority of the current flow. This insight forces a two order of magnitude correction to the carrier densities, previously inferred from standard scanning probe or macroscopic electrical characterization.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration","authors":"Jingye Xie, Qinyuan Wang, Junchen Dong, Dedong Han, Xing Zhang","doi":"10.1002/aelm.202500286","DOIUrl":"https://doi.org/10.1002/aelm.202500286","url":null,"abstract":"A two‐step thermal annealing treatment strategy is proposed to enhance the electrical performance of the InAlZnO (IAZO) transistors, where the devices are initially pre‐annealing at 400 °C for 30 min, followed by a second annealing step across a wide temperature range of 200–500 °C. The optimized IAZO transistors exhibit excellent electrical properties, including a field‐effect mobility of 59.31 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>, a subthreshold swing of 68.56 mV per decade, a turn‐on voltage of −0.74 V, an off‐state current below 100 pA, and an on‐to‐off current ratio over 10<jats:sup>7</jats:sup>. The devices show excellent bias stress stability and thermal stability as well. By Hall measurement, X‐ray photoelectron spectroscopy, and atomic force microscopy characterization analysis, it is found that two‐step annealing treatment stabilizes carrier concentration and smooths surface of the IAZO active layer. Furthermore, the inverters and 9‐stage ring oscillators based on the IAZO transistors are demonstrated. This work promotes the application of the oxide transistors in back‐end‐off‐line and monolithic 3D integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144500788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Regular and Inverted Hysteresis in Organic Electrochemical Transistors: Mechanisms and Electrochemical Insights","authors":"Ramesh Kumar, Marcos Luginieski, Ankush Kumar, Henrique Frulani de Paula Barbosa, Andreas Schander, Gregório Couto Faria, Björn Lüssem","doi":"10.1002/aelm.202500176","DOIUrl":"https://doi.org/10.1002/aelm.202500176","url":null,"abstract":"Organic electrochemical transistors (OECTs) are one of the most versatile electronic devices, offering great potential applications from bioelectronics and smart sensors to analog neuromorphic computing, owing to their unique electronic‐ionic coupling characteristics. However, despite their considerable success, the complex interplay between electronic and ionic charge carriers leads to various anomalous device behaviors that are still poorly understood, hindering their practical application. For instance, OECTs often exhibit different hysteresis behaviors in their transfer characteristics and asymmetry in switching during turn‐on and turn‐off operations. Herein, the evolution of hysteresis in the transfer curves of OECTs as a function of delay time and channel length is systematically investigated, employing a range of electrochemical measurements. The findings reveal that the transition from regular hysteresis to inverted hysteresis is governed by the interplay between ion injection and extraction dynamics, which is closely linked to the open circuit potential (OCP) of the electrolyte‐semiconductor interface. This work provides valuable electrochemical insights into the device physics of OECTs, paving the way for future optimization and advancement of these devices for practical implications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"58 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Strategic Approach for Enhanced p‐Type Doping of WSe2 p‐MOSFETs Using an Atomic Oxidation Process","authors":"Dongjea Seo, Shivanshu Mishra, Ruixue Li, Jiaxuan Wen, Seung Gyo Jeong, Brayden Lukaskawcez, Seungjun Lee, Tony Low, Alexander S. McLeod, Bharat Jalan, Steven J. Koester","doi":"10.1002/aelm.202500108","DOIUrl":"https://doi.org/10.1002/aelm.202500108","url":null,"abstract":"Doping allows precise tuning of the electronic properties in 2D materials, optimizing their performance for applications such as complementary metal‐oxide‐semiconductor (CMOS) technology. However, developing reliable <jats:italic>p</jats:italic>‐type 2D semiconductors remains challenging due to intrinsic defects or unintentional <jats:italic>n</jats:italic>‐type doping. This study presents robust <jats:italic>p</jats:italic>‐type monolayer WSe<jats:sub>2</jats:sub> field‐effect transistors (FETs) using phase‐engineered WSe<jats:sub>2</jats:sub>/WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> building blocks created via an atomic oxidation process (AOP). The findings reveal that when bilayer WSe<jats:sub>2</jats:sub> is exposed to AOP, the top layer undergoes self‐limited oxidation to WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> with no detectable oxidation of the bottom layer. This result is confirmed by Raman spectroscopy, X‐ray photoelectron spectroscopy, and Kelvin probe force microscopy. This process has further been used to demonstrate a well‐controlled and fully encapsulated WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic>/WSe<jats:sub>2</jats:sub>/WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> heterostructure, ensuring symmetrical protection and stability of the WSe<jats:sub>2</jats:sub> channel region. The surface charge transfer doping using WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> provides the capability to selectively modulate the carrier concentration in a WSe<jats:sub>2</jats:sub> without altering the intrinsic properties of the channel. This non‐destructive method simplifies the fabrication of <jats:italic>p</jats:italic>‐type 2D FETs with monolithic, phase‐engineered heterostructures, facilitating seamless integration into next‐generation device architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}