Advanced Electronic Materials最新文献_第4页

Colossal Modulation of Mechanical Resonance with temperature in single‐Crystalline SrTiO 3 Microbridges Integrated on Silicon 硅基单晶srtio3微桥中机械共振随温度的巨大调制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-29 DOI: 10.1002/aelm.70601

Deepa Guragain, Laveeza Ahmad, Alexander A. Puretzky, Carson Hester, Zheng Hui Lim, Richard Le, Sundeep Mukherjee, Ye Cao, Joseph H. Ngai

{"title":"Colossal Modulation of Mechanical Resonance with temperature in single‐Crystalline SrTiO 3 Microbridges Integrated on Silicon","authors":"Deepa Guragain, Laveeza Ahmad, Alexander A. Puretzky, Carson Hester, Zheng Hui Lim, Richard Le, Sundeep Mukherjee, Ye Cao, Joseph H. Ngai","doi":"10.1002/aelm.70601","DOIUrl":"https://doi.org/10.1002/aelm.70601","url":null,"abstract":"Multifunctional oxides exhibit material properties that differ from yet complement those of conventional semiconductors. For nano/microelectromechanical systems, structural coupling between materials that exhibit dissimilar mechanical characteristics opens a pathway to realize novel functionalities. Here we present the structural characteristics and resonant mechanical behavior of suspended microbridges comprised of single‐crystalline SrTiO 3 that has been epitaxially integrated on Si(100). While the epitaxial SrTiO 3 is relaxed relative to the silicon substrate, residual tensile strain persists due to the difference in thermal expansion between the former and the latter. The strain in the SrTiO 3 microbridges is inhomogeneous at the nanoscale due to the presence of extended defects associated with film relaxation. We find that the resonant frequencies of the microbridges are not only enhanced by the residual strain, but are also hyper‐sensitive to temperature, as quantified by exceptionally large temperature coefficients of frequency at room temperature. The “colossal” temperature coefficients of frequency potentially enable ultra‐sensitive, uncooled, infrared radiation sensors to be created.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Decoupled Dielectric Optimization and YbO x Contact Engineering in All‐Spray‐Processed Oxide Thin‐Film Transistors 全喷涂氧化薄膜晶体管的解耦介电优化和YbO x接触工程

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-28 DOI: 10.1002/aelm.70598

Ahmed Mohamed, Nathan R. Halcovitch, Oleg V. Kolosov, Arokia Nathan, William I. Milne, George Adamopoulos

{"title":"Decoupled Dielectric Optimization and YbO x Contact Engineering in All‐Spray‐Processed Oxide Thin‐Film Transistors","authors":"Ahmed Mohamed, Nathan R. Halcovitch, Oleg V. Kolosov, Arokia Nathan, William I. Milne, George Adamopoulos","doi":"10.1002/aelm.70598","DOIUrl":"https://doi.org/10.1002/aelm.70598","url":null,"abstract":"Control of dielectric transport and contact energetics remains a central challenge in scalable oxide electronics. We present a decoupled optimization strategy for fully spray‐processed oxide thin‐film transistors with In 2 O 3 :W channels, where dielectric densification and interfacial dipole formation are engineered independently. MgO gate dielectrics reveal a transition from trap‐assisted to Schottky‐dominated leakage with increasing deposition temperature, suppressing defect‐mediated conduction and reducing interface trap density. Transistors incorporating MgO deposited at 400°C exhibit improved electrostatic control, with electron mobility approaching 40 cm 2 V −1 s −1 and subthreshold swing reduced to 0.35 V dec −1 . Introduction of a thermochemically stabilized 3 nm YbO x interlayer between the source/drain electrodes and the In 2 O 3 :W channel enhances operation. Kelvin probe measurements reveal a dipole‐induced work‐function reduction exceeding 1.7 eV. This band‐alignment engineering lowers the injection barrier and suppresses contact limitations, enabling a transition from injection‐limited toward channel‐dominated transport. Consequently, fully spray‐processed transistors exhibit electron mobility of 94 cm 2 V −1 s −1 , subthreshold swing of 191 mV dec −1 , and on/off current modulation ratios exceeding 10 7 . Statistical analysis of 104 devices with identical nominal geometry further demonstrates the reproducibility of the optimized transistor characteristics across the evaluated device population. These findings establish a scalable route toward high‐performance solution‐processed electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Solar-Blind Photodetectors Enabled by Post-Annealing Optimization of Solution-Processed Ga2O3 Films 通过溶液处理的ga2o3薄膜后退火优化实现高性能太阳盲光电探测器

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-07-29 DOI: 10.1002/aelm.70467

Shiqi Yan, Dingding Ni, Yaqi Zhou, Zijian Ding, Zhanjun Shi, Jingrui Ma, Baoqing Zhang, Jiawei Zhang, Xiao Wei Sun, Qian Xin, Aimin Song

{"title":"High-Performance Solar-Blind Photodetectors Enabled by Post-Annealing Optimization of Solution-Processed Ga2O3 Films","authors":"Shiqi Yan, Dingding Ni, Yaqi Zhou, Zijian Ding, Zhanjun Shi, Jingrui Ma, Baoqing Zhang, Jiawei Zhang, Xiao Wei Sun, Qian Xin, Aimin Song","doi":"10.1002/aelm.70467","DOIUrl":"10.1002/aelm.70467","url":null,"abstract":"Gallium oxide (Ga2O3) is an ultra-wide-bandgap semiconductor with an intrinsic absorption edge in the solar-blind region, making it attractive for deep-ultraviolet photodetectors. However, solution-processed Ga2O3 photodetectors typically exhibit limited photoresponse, which hinders their practical application. Therefore, developing effective post-annealing strategies to regulate defect states and improve optoelectronic performance is essential. In this work, the post-annealing process of solution-processed Ga2O3 films is investigated by tailoring the annealing atmosphere and temperature. By varying the annealing atmosphere using different gas compositions, oxygen-related defect states are modulated, as revealed by x-ray photoelectron spectroscopy, leading to enhanced photocurrent and photo-to-dark-current ratio. In addition, the influence of annealing temperature on device performance is evaluated through the evolution of photoresponse characteristics, revealing an optimal thermal treatment window for maximizing photoconductive gain while maintaining low dark current. Through the combined optimization of annealing atmosphere and temperature, Ga2O3 solar-blind photodetectors with enhanced photoresponse are achieved, exhibiting a responsivity of 7.5 × 102 A W−1 under 254 nm illumination together with high external quantum efficiency and specific detectivity. These results demonstrate that controlled post-annealing optimization provides an effective route for improving the performance of solution-processed Ga2O3 solar-blind photodetectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70467","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148633706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Responsivity and Fast-Response Organic Phototransistor Based on Dinaphtho[2,3-b:2′,3′-f]Thieno[3,2-b]Thiophene 基于Dinaphtho[2,3‐b:2 ‘,3 ’‐f]Thieno[3,2‐b]噻吩的高响应和快速有机光电晶体管

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-11 DOI: 10.1002/aelm.70527

Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli

{"title":"High-Responsivity and Fast-Response Organic Phototransistor Based on Dinaphtho[2,3-b:2′,3′-f]Thieno[3,2-b]Thiophene","authors":"Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli","doi":"10.1002/aelm.70527","DOIUrl":"10.1002/aelm.70527","url":null,"abstract":"Organic phototransistors (OPTs) are promising as low-cost detectors compatible with plastic-substrate electronics for visible light communication (VLC) systems. However, enhancing their sensitivity without sacrificing speed remains challenging. In this work, we report on an OPT based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) optimized for detecting blue light. The device employs an Al/Al2O3/DNTT/Au layered structure fabricated at ≤100°C on a PEN substrate by shadow-mask patterning. Key performance metrics include stable low-voltage transistor operation, a field-effect mobility in the range 0.16–0.24 cm2 V−1 s−1, and a low contact resistance (≈12 kΩ·cm). Under low-intensity illumination (≈10−8 W cm−2) the phototransistor achieves an exceptional responsivity of ≈ 250 A/W and a specific detectivity on the order of 1012 Jones, indicating competitive weak-light sensing capability. Even at higher light levels (≈10−3 W cm−2), it maintains a large photosensitivity up to ≈120. High-frequency tests demonstrate fast and detectable response up to 150 kHz. The device thus offers a rare combination of high sensitivity and fast response. These results represent a substantial advancement for organic optoelectronics, suggesting that the proposed OPT design is a promising candidate for future high-speed VLC and other applications requiring lightweight, high-performance photodetectors in the visible range.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70527","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strategies and Challenges in Memristor-Selector Integration for High-Density Memory and Compute-in-Memory Systems 高密度存储器和计算存储器系统中记忆电阻选择器集成的策略和挑战

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-09-14 DOI: 10.1002/aelm.70558

Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak

{"title":"Strategies and Challenges in Memristor-Selector Integration for High-Density Memory and Compute-in-Memory Systems","authors":"Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak","doi":"10.1002/aelm.70558","DOIUrl":"10.1002/aelm.70558","url":null,"abstract":"Memristor crossbar arrays offer ultrahigh integration density and exceptional area efficiency, establishing a promising platform for data storage and compute-in-memory (CIM) architectures, including neuromorphic and analogue vector–matrix multiplication (VMM) accelerators. Their compact 4F2 footprint and compatibility with 3D stacking enable dense, low-latency compute-in-memory architectures can alleviate the von Neumann bottleneck. By emulating large-scale synaptic networks, these arrays support brain-inspired information processing with reduced energy consumption. However, large-scale implementation remains constrained by parasitic sneak-path currents, which induce unintended conduction through neighboring cells, degrade read–write fidelity, and increase power dissipation. This review presents a systematic analysis of resistive-switching mechanisms and current–voltage characteristics, clarifying the non-linear relationship between switching parameters and synaptic functionality. We evaluate key performance metrics across state-of-the-art memristors, highlighting progress toward femtojoule-level switching energies and biologically comparable efficiency. Comparative assessments of transistor- and memristor-based synapses further elucidate energy–performance trade-offs in CIM hardware. We then examine selector-integration strategies in one-transistor–one-memristor and one-diode–one-memristor architectures, with emphasis on rectification strength, threshold nonlinearity, bidirectional plasticity, and back-end-of-line compatibility. As a result, we identify intrinsically bidirectional, scalable selector–memristor co-design as a critical pathway toward robust, low-power memristor CIM and neuromorphic crossbar systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70558","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Limited Switching Femtojoule-Class RESET Energy Estimate in Deep-Confine in-Doped Sb2Te3 Phase-Change Memory 深限掺sb2t3相变存储器中自限开关飞焦耳级复位能量估计

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-09-14 DOI: 10.1002/aelm.70552

Ke Gao, Yiliang Guo, Ruizhe Zhao, Rongjiang Zhu, Ninghua Li, Yunfei Hu, Ye Yu, Hao Tong, Xiangshui Miao

{"title":"Self-Limited Switching Femtojoule-Class RESET Energy Estimate in Deep-Confine in-Doped Sb2Te3 Phase-Change Memory","authors":"Ke Gao, Yiliang Guo, Ruizhe Zhao, Rongjiang Zhu, Ninghua Li, Yunfei Hu, Ye Yu, Hao Tong, Xiangshui Miao","doi":"10.1002/aelm.70552","DOIUrl":"10.1002/aelm.70552","url":null,"abstract":"Programming energy, particularly RESET, limits phase-change memory scaling by increasing heat dissipation, cross-talk, and access-device requirements. While substantial progress has been achieved by aggressively shrinking the electrode–PCM contact area and enhancing thermal confinement, further reductions become increasingly challenging. Here we demonstrate an orthogonal strategy: self-limited switching in deep-confined In-doped Sb2Te3 (InST) cells enabled by pulsed electrodeposition of a fully amorphous, composition-uniform alloy. The devices deliver nanosecond RESET at microampere-level currents with a mean RESET energy of ∼15 fJ (n = 20), sustain 800 cycles under femtojoule-level RESET pulses. Cross-sectional TEM reveals partial crystallization within an amorphous matrix, consistent with a self-limited conductive pathway that preserves a relatively high low-resistance state and suppresses RESET current without further contact-area reduction.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70552","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions 磁隧道结兼容异质结构中垂直磁各向异性的选择性调谐和Dzyaloshinskii-Moriya相互作用

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-20 DOI: 10.1002/aelm.70536

Bob Vermeulen, Seongbin Seo, Domenico Giuliano, Jyotirmoy Chatterjee, Giacomo Talmelli, Robert Carpenter, Yann Canvel, Yanan Li, Björn Heinz, Philipp Pirro, Bart Sorée, Kristiaan Temst, Van Dai Nguyen, Gouri Sankar Kar, Siddharth Rao

{"title":"Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions","authors":"Bob Vermeulen, Seongbin Seo, Domenico Giuliano, Jyotirmoy Chatterjee, Giacomo Talmelli, Robert Carpenter, Yann Canvel, Yanan Li, Björn Heinz, Philipp Pirro, Bart Sorée, Kristiaan Temst, Van Dai Nguyen, Gouri Sankar Kar, Siddharth Rao","doi":"10.1002/aelm.70536","DOIUrl":"10.1002/aelm.70536","url":null,"abstract":"Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in-plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya interaction, eliminating the need for current-driven domain-wall motion. Nevertheless, experimental implementation of this concept requires precise manipulation of PMA to define IP interconnections between MTJs, as well as independent control of DMI to ensure reliable coupling. Here, we introduce a hybrid free layer (HFL) stack comprising an Ir/Co bottom layer and a CoFeB/MgO top layer providing PMA. We show that ultrathin Pt insertion layers at the Ir/Co interface provide an effective means to tune the DMI without affecting PMA, enabling independent control of both properties. Finally, we develop an ion beam etching (IBE) process on a 300-mm platform that selectively suppresses the CoFeB/MgO contribution to PMA, thereby converting the stack to IP magnetization. This approach enables the manipulation of the PMA of the interconnecting free layer during MTJ patterning, providing a scalable pathway for the fabrication of chirally coupled MTJs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70536","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge) (Adv. Electron. Mater. 18/2026) 中心对称Skyrmion宿主GdRu2X2 （X = Si和Ge）的原子调制竞争交换相互作用板牙。18/2026)

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 DOI: 10.1002/aelm.70591

Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran

引用次数: 0

Physics-Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory 先进3D纳米级垂直NAND闪存的基于物理的紧凑建模

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-04-05 DOI: 10.1002/aelm.202600009

Ilho Myeong, Seonho Shin, Ickhyun Song

{"title":"Physics-Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory","authors":"Ilho Myeong, Seonho Shin, Ickhyun Song","doi":"10.1002/aelm.202600009","DOIUrl":"10.1002/aelm.202600009","url":null,"abstract":"The increasing complexity of 3-dimensional (3D) NAND flash memory necessitates advanced simulation frameworks to predict read behavior, program/erase (P/E) dynamics, and interactions between neighboring cells. We propose a unified compact model for Simulation Program with Integrated Circuit Emphasis (SPICE) that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. The framework begins with a newly devised de-embedding methodology that isolates the intrinsic cell characteristics from measured string current. These extracted behaviors are integrated into a compact model that reflects grain-boundary-induced mobility degradation in the polycrystalline-silicon (poly-Si) channel as well as its temperature dependence. To reproduce complex P/E transients, the model incorporates physics-based voltage-controlled current sources (VCCS), inter-cell fringing capacitances, and a gate-induced drain-leakage (GIDL) capacitance network. By modeling not only the target string but also the channel-potential evolution of neighboring inhibit strings, the framework captures key array-level behaviors such as natural local self-boosting (NLSB) and the down-coupling phenomenon (DCP). The proposed unified model provides a powerful tool for reducing design uncertainty and enables accurate evaluation of design trade-offs, including short-channel effects from Lg/Ls scaling, bit-line current (IBL) degradation with increased stacking, sensing-margin variation, and the impact of gate-stack engineering on P/E performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202600009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147619808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio-Based Electrodes Beyond ECG 超越ECG的可持续、软性和生物基电极推进水果生物阻抗监测

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-05-06 DOI: 10.1002/aelm.70417

Sundus Riaz, Ahmed Rasheed, Angelo Zanella, Almudena Rivadeneyra, Paolo Lugli, Luisa Petti, Pietro Ibba

{"title":"Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio-Based Electrodes Beyond ECG","authors":"Sundus Riaz, Ahmed Rasheed, Angelo Zanella, Almudena Rivadeneyra, Paolo Lugli, Luisa Petti, Pietro Ibba","doi":"10.1002/aelm.70417","DOIUrl":"10.1002/aelm.70417","url":null,"abstract":"Electrical impedance spectroscopy (EIS), referred to as bioimpedance when used to characterize biological tissues, is emerging as a powerful, low-cost, and non-invasive technique for real-time assessment of fruit quality. It enables detection of physiological, biochemical, and structural changes during ripening, as well as internal defects, microbial contamination, and postharvest stress during storage and transport. Nevertheless, achieving accurate and reliable fruit bioimpedance measurements requires careful consideration of electrode design, flexibility, and stability of the electrode–fruit interface. This perspective traces the technological evolution of electrodes for fruit sensing, highlighting the transition from conventional ECG-inspired platforms to soft, unconventional architectures and bio-based sustainable solutions, including cellulose substrates, epidermal-mimetic electrodes, corn-protein conductive adhesives, and other biosourced materials. Recent fabrication strategies exploiting natural substrates, carbon-based composites, and agro-waste materials to improve conductivity, conformability, and environmental compatibility are examined. Emerging biocompatible, biodegradable, and circular electrode architectures are highlighted as promising pathways to reduce ecological footprint and electronic waste while maintaining signal fidelity. Key challenges including conductivity variability, instability at the electrode–substrate interface, and limited reproducibility across heterogeneous biological matrices are assessed. Finally, a roadmap is outlined for integrating sustainable materials with scalable manufacturing routes toward next-generation EIS platforms for precision agriculture and horticultural sensing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70417","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148287496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0