Advanced Electronic Materials最新文献_第5页

Ferroelectric Tuning of Excitons in Sc2CO2/WSe2 Heterostructures Sc2CO2/WSe2异质结构中激子的铁电调谐

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-26 DOI: 10.1002/aelm.202500432

Zhe Zhang, Shudong Wang

{"title":"Ferroelectric Tuning of Excitons in Sc2CO2/WSe2 Heterostructures","authors":"Zhe Zhang, Shudong Wang","doi":"10.1002/aelm.202500432","DOIUrl":"https://doi.org/10.1002/aelm.202500432","url":null,"abstract":"Van der Waals heterostructures serve as ideal platforms for regulating exciton states. The introduction of ferroelectric materials has provided a new strategy for heterostructure exciton engineering. In this study, the electronic structures and excitonic optical properties of ferroelectric‐based heterostructure Sc2CO2↓/WSe2 and Sc2CO2↑/WSe2 with different out‐of‐plane polarization directions have been investigated by the GW+BSE formalism. The findings show that out‐of‐plane polarization can realize the transition of heterostructure band alignment from Type I to Type II by regulating the band structure of the adsorbed layer WSe2, significantly enhancing carrier separation efficiency. More importantly, changing the out‐of‐plane polarization direction enables dynamic regulation of the bright‐dark attributes of heterostructure exciton states, achieving an optically switchable mechanism analogous to binary ″0″ and ″1″. Additionally, out‐of‐plane polarization exhibits significant regulatory effects on the optical absorption characteristics and radiative lifetimes of excitons. This study not only clarifies the effective modulation of ferroelectric polarization direction on the electronic structures of heterostructure but also reveals its unique advantages in manipulating the excitation behavior of optoelectronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144906087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear Optical Imaging of Entangled Heterophase Polydomains in Ferroelectric BZT Films (Adv. Electron. Mater. 13/2025) 铁电BZT薄膜中纠缠异相多畴的非线性光学成像。板牙。13/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-25 DOI: 10.1002/aelm.70056

Piyali Maity, Hongbo Chen, Jun Ouyang, Yuhang Ren

引用次数: 0

N‐Butyl Pyridinium Chlorobismuthates (III): A Soft Organic‐Inorganic Hybrid Transparent Solid‐State Ion Conductor N -丁基氯铋酸吡啶（III）：一种软有机-无机杂化透明固体离子导体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-23 DOI: 10.1002/aelm.202500323

Biswajit Bhattacharyya, Christian Balischewski, Jiyong Kim, Eric Sperlich, Christina Günter, Shashank Gahlaut, Ilko Bald, Armin Wedel, Andreas Taubert

{"title":"N‐Butyl Pyridinium Chlorobismuthates (III): A Soft Organic‐Inorganic Hybrid Transparent Solid‐State Ion Conductor","authors":"Biswajit Bhattacharyya, Christian Balischewski, Jiyong Kim, Eric Sperlich, Christina Günter, Shashank Gahlaut, Ilko Bald, Armin Wedel, Andreas Taubert","doi":"10.1002/aelm.202500323","DOIUrl":"https://doi.org/10.1002/aelm.202500323","url":null,"abstract":"Transparent solid‐state ionic conductors are emerging as next‐generation materials for various modern optoelectronics and energy applications. In this study, an organic‐inorganic hybrid metal halide is introduced, tris‐N‐butyl pyridinium nonachlorido‐dibismuthate(III), (C4py)3[Bi2Cl9]. The material is an optically transparent solid‐state ion conductor with high ionic conductivity at room temperature. Single crystal analysis reveals a structure composed of N‐butyl pyridinium cations and [Bi2Cl9]3− anions, formed by edge‐sharing BiCl6 octahedra. The material is thermally stable up to 300 °C and undergoes a melting transition at 101.6 °C. Notably, it demonstrates unidirectional growth in thin films, boasting over 90% optical transparency in the visible wavelength and overall ionic conductivity of 10−3 mS cm−1 at room temperature. (C4py)3[Bi2Cl9] stands out as one of the first reported low‐melting, optically transparent ionic solids, showcasing superior ion conduction and holding promise for applications such as electrochromic devices and energy storage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analog ReLU Activation Enabled by Van Hove Singularities in a Kagome Semiconductor Field‐Effect Transistor Kagome半导体场效应晶体管中的Van Hove奇点使能模拟ReLU激活

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-22 DOI: 10.1002/aelm.202500255

Ziyuan Meng, Hang Xu, Xueli Geng, Zhaoying Ren, Haifeng Feng, Kunrong Du, Zhijian Shi, Wei Cai, Zhe Sun, Hongrun Zhang, Anping Huang, Feng Cheng, Binghui Ge, Yi Du, Weichang Hao

{"title":"Analog ReLU Activation Enabled by Van Hove Singularities in a Kagome Semiconductor Field‐Effect Transistor","authors":"Ziyuan Meng, Hang Xu, Xueli Geng, Zhaoying Ren, Haifeng Feng, Kunrong Du, Zhijian Shi, Wei Cai, Zhe Sun, Hongrun Zhang, Anping Huang, Feng Cheng, Binghui Ge, Yi Du, Weichang Hao","doi":"10.1002/aelm.202500255","DOIUrl":"https://doi.org/10.1002/aelm.202500255","url":null,"abstract":"With the growing demand for high‐performance computing in deep learning, energy‐efficient analog computing has emerged as a promising alternative to conventional energy‐intensive digital processing. A major obstacle in this field is the physical realization of activation functions, due to the lack of analog f (FETs) that inherently exhibit the desired piecewise‐linear transfer characteristics. Here, a novel strategy is presented for implementing the Rectified Linear Unit (ReLU) activation function by exploiting the high density of states (DOS) associated with van Hove singularities (vHs), induced by flat bands in a kagome semiconductor Nb3Cl8 FET. This vHs‐enhanced DOS imparts pronounced piecewise‐linear transfer behavior at low temperatures, effectively mimicking the ReLU function. To enable room‐temperature operation, the origin of the hysteresis commonly observed in Nb3Cl8 FETs is identified and addressed. Temperature‐dependent and time‐resolved measurements attribute the hysteresis to charge trapping at the Nb3Cl8–substrate interface. By introducing a hexagonal boron nitride (h‐BN) buffer layer, the hysteresis is successfully suppressed, achieving stable and highly linear transfer characteristics at room temperature. These results demonstrate the potential of vHs‐engineered electronic states for the physical implementation of analog activation functions, offering a pathway toward compact, high‐density, and energy‐efficient hardware for analog deep learning accelerators.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indium Alloying as a Mobility Booster in IGZO Thin‐Film‐Transistor via Plasma‐Enhanced Atomic Layer Deposition Approach for BEOL Compatible Circuits 通过等离子体增强原子层沉积方法在BEOL兼容电路中作为IGZO薄膜晶体管迁移率增强剂的铟合金化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-22 DOI: 10.1002/aelm.202500162

Meishan Zhang, Mei Shen, Wenhui Wang, Jun Lan, Jiqing Lu, Yida Dong, Xiao Huang, Zhixiong Li, Longyang Lin, Yida Li

{"title":"Indium Alloying as a Mobility Booster in IGZO Thin‐Film‐Transistor via Plasma‐Enhanced Atomic Layer Deposition Approach for BEOL Compatible Circuits","authors":"Meishan Zhang, Mei Shen, Wenhui Wang, Jun Lan, Jiqing Lu, Yida Dong, Xiao Huang, Zhixiong Li, Longyang Lin, Yida Li","doi":"10.1002/aelm.202500162","DOIUrl":"https://doi.org/10.1002/aelm.202500162","url":null,"abstract":"Indium Gallium Zinc Oxide (IGZO) thin‐film transistors (TFTs) offer promising potential for next‐gen monolithic three ‐ dimensional (M3D) integrated chips due to their decent mobility, excellent electrostatic characteristics, and low‐temp processing. However, mobility in IGZO TFT is still underwhelming. Here, accurate modulation of the Indium (In) ratio via a plasma‐enhanced atomic‐layer deposition (PEALD) approach is investigated, together with a post‐deposition annealing (PDA) process over multiple temperatures. Through detailed material characterization, it is elucidated that a high In ratio with PDA favorｓ more In─O bonding and reduction of defects state. While a higher PDA temperature results in a higher mobility, other electrical performance is degraded due to unwanted defects generation. Optimized IGZO (In (5): Ga (1): Zn (1)) TFT is obtained after a PDA of 350 °C with a significant enhancement in field‐effect mobility (µFE) from 25.10 to 66.04 cm2 V·s−1. In addition, the TFT achieves other excellent electrical performance, including an Ion‐off of 107, low subthreshold swing (SS) of 79.25 mV dec−1, and threshold voltage (VTH) of −0.39 V. Building upon the optimized IGZO TFT, a n‐ IGZO TFT‐based pseudo enhancement load (PEL) inverter is presented, achieving robust rail‐to‐rail operation, thus demonstrating its suitability for integration in CMOS backend‐of‐line (BEOL) for high‐performance circuitries.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"82 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors 电解质门控有机突触晶体管的神经形态运动控制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-20 DOI: 10.1002/aelm.202500359

Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee

{"title":"Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors","authors":"Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee","doi":"10.1002/aelm.202500359","DOIUrl":"https://doi.org/10.1002/aelm.202500359","url":null,"abstract":"Neuromorphic motor control systems aim to emulate the adaptive and efficient motor regulation observed in biological organisms by seamlessly integrating sensing and processing with actuation. Electrolyte‐gated organic synaptic transistors (EGOSTs) have emerged as promising building blocks for such systems due to their ability to mimic synaptic behavior through ion–electronic coupling, analogous to biological synapses. This review highlights recent advances in EGOST‐based neuromorphic motor control systems, focusing on their operational mechanisms, biological synaptic plasticity characteristics, and integration with motor actuators. A biological perspective on motor control is provided, emphasizing the roles of synaptic transmission and plasticity. It is then examined how these functions are emulated in EGOSTs, including strategies for tuning device behavior through morphology control and incorporating intrinsic sensing capabilities within a single device. Applications are categorized across artificial muscle fibers, robotic manipulators, and neuromuscular prostheses, demonstrating the versatility of EGOSTs in enabling low‐power, adaptive, and biointegrated motion control. Finally, key challenges—such as material limitations, electrochemical stability, and system‐level integration are discussed—that must be addressed to transition from proof‐of‐concept demonstrations to real‐world applications. This review underscores the transformative potential of EGOST‐based neuromorphic platforms for future wearable robotics, neuroprosthetics, and bioinspired intelligent systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144901829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “Hydrogen Plasma Treatment for Improving Reliability of In-Ga-Zn-O Transistors Without Side Effects Through Post-Annealing Process” 对“通过后退火工艺提高In - Ga - Zn - O晶体管可靠性的氢等离子体处理无副作用”的修正

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202500509

Taewon Seo, Juyoung Yun, Seung-Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung

引用次数: 0

p‐Type β‐Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties 具有优异电输运性能的p‐Type β‐Ga2O3同外延薄膜

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202500190

Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez‐Tomás, Ekaterine Chikoidze

{"title":"p‐Type β‐Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties","authors":"Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez‐Tomás, Ekaterine Chikoidze","doi":"10.1002/aelm.202500190","DOIUrl":"https://doi.org/10.1002/aelm.202500190","url":null,"abstract":"This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β‐Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)‐ and (–201)‐oriented substrates. (010) β‐Ga2O3 samples exhibit mobility of up to 69.4 cm2 (V·s)−1 and stable hole concentrations ≈2.4 × 1017 cm−3 from 370 to 700 K. Structural and morphological studies, including XRD, AFM, and STEM, confirm high epitaxial quality, absence of extended defects and minimal strain. (–201) β‐Ga2O3 layer, which is simultaneously grown, exhibits typical p‐Ga2O3 behavior with observed deep level defects. The hole mobility ranging from 26 to 36 cm2 V−1·s−1 is measured between 420 and 700 K. Comparison of (010) and (–201) orientations reveals distinct anisotropic electrical properties. The findings emphasize the free motion of holes in β‐Ga2O3 and the critical role of crystallographic orientation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144901832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield FeCu/MWCNT纳米复合材料具有宽的微波吸收带和高减小的雷达截面和远场

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202400965

Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara

{"title":"FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield","authors":"Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara","doi":"10.1002/aelm.202400965","DOIUrl":"10.1002/aelm.202400965","url":null,"abstract":"<p>To address the issue of electromagnetic pollution, the development of materials with favorable microwave attenuation over a wide range of frequency, is imperative. These materials should have lightweight and relatively low thickness. In this study, FeCu nanoparticles (NPs) is synthesized using a co-precipitation method, and a novel FeCu/MWCNT nanocomposite is formed by decorating multi-walled carbon (MWCNT) with FeCu NPs in two different ratios (2:1) & (3:1). The FeCu/MWCNT nanocomposites exhibited superior microwave absorption properties, owing to the increased polarization loss (surface polarization and dipole), conduction loss, ferromagnetic and multiple natural resonance. At 9.67 GHz, FeCu/MWCNT (3:1) displayed a minimum reflection loss (RL<sub>min</sub>) of −39.82 dB with an effective absorption bandwidth which covered 98.2% of X and Ku bands at a thickness of 1.8 mm. The radar cross section (RCS) and far field simulation confirmed that, covering a typical perfect conductor (PEC) sphere with FeCu/MWCNT nanocomposites causes RCS and far field reduction for 30–50 dB and 20 dB, respectively, in comparison with uncovered PEC.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400965","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Regiochemistry on Doping and Thermoelectric Properties of n‐Doped Fullerene Derivatives 区域化学对n掺杂富勒烯衍生物掺杂和热电性能的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-18 DOI: 10.1002/aelm.202500287

Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster

引用次数: 0