Advanced Electronic Materials最新文献_第5页

Stabilization of Ultrafast Domain Wall Motion by Edge-Anisotropy Engineering in Ferrimagnetic Nanowires 利用边缘各向异性工程稳定铁磁纳米线的超快畴壁运动

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-12 DOI: 10.1002/aelm.70535

Mojtaba Mohammadi, Sina Ranjbar, Yoshinobu Nakatani, Benjamin Lilienthal-Uhlig, Kenji Tanabe, Hiroyuki Awano

{"title":"Stabilization of Ultrafast Domain Wall Motion by Edge-Anisotropy Engineering in Ferrimagnetic Nanowires","authors":"Mojtaba Mohammadi, Sina Ranjbar, Yoshinobu Nakatani, Benjamin Lilienthal-Uhlig, Kenji Tanabe, Hiroyuki Awano","doi":"10.1002/aelm.70535","DOIUrl":"10.1002/aelm.70535","url":null,"abstract":"Achieving stable, ultrafast current-induced domain wall motion (CIDWM) is essential for practical racetrack memory devices. Here, anisotropy-engineering at the edges of Pt/GdFe ferrimagnetic nanowires with composition near magnetic compensation is investigated through experimental laser-annealing (LA) treatments and Landau–Lifshitz–Gilbert (LLG)-based micromagnetic simulations. CIDWM measurements show that LA enhances DW velocity and stabilizes propagation over a wide current-density range. The velocity reaches approximately 3200 m s−1 and remains relatively stable at high current densities, indicating a stable high-speed propagation regime. Kerr microscopy further reveals that LA transforms curved and distorted DW profiles into straighter, more uniform configurations. Simulations varying the local perpendicular magnetic anisotropy (Ku) and annealed-edge width clarify the underlying mechanism. Moderate edge-anisotropy reduction suppresses pinning, stabilizes the DW configuration, and enables coherent spin–orbit-torque-driven propagation. In contrast, excessive anisotropy reduction or excessively wide annealed regions induce multidomain instability and deteriorate DW motion. The simulated dynamics reproduce the experimentally observed velocity saturation and stable propagation behavior. LA-defined channels further suggest a scalable multi-lane architecture in which N laser traces can define up to N+1 DW transport paths within a single wire. These findings establish LA as an effective anisotropy-engineering technique and provide a quantitative design framework for racetrack memory and reconfigurable spintronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70535","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single-Layer TADF Organic Light-Emitting Diodes 预测单层TADF有机发光二极管外量子效率的集成光电模型

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-02-19 DOI: 10.1002/aelm.202500729

Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert-Jan A. H. Wetzelaer

{"title":"Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single-Layer TADF Organic Light-Emitting Diodes","authors":"Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert-Jan A. H. Wetzelaer","doi":"10.1002/aelm.202500729","DOIUrl":"10.1002/aelm.202500729","url":null,"abstract":"Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are an attractive alternative to phosphorescent OLEDs to harvest triplet excitons. However, a quantitative device model is still lacking. Here, we present an optoelectronic device model that fully predicts the performance of single-layer TADF OLEDs without any adjustable parameter. All input parameters have been independently obtained from charge-transport characterization, optical constants, and photoluminescence measurements. The electrical characteristics of the OLED are first simulated with a drift-diffusion solver, followed by the determination of the position- and voltage-dependent exciton densities based on kinetic rates determined from photoluminescence experiments, and finally combined with an optical-outcoupling model. The integrated optoelectronic model is validated with single-layer OLEDs based on the TADF emitter 9,10-bis(4-(9H-carbazol-9-yl)−2,6-dimethylphenyl)−9,10-diboraanthracene (CzDBA), quantitatively describing the external quantum efficiency and its roll-off for different layer thicknesses and temperatures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500729","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Incorporation of Extrinsic Alkali Cations Modulates Ion Migration and Hysteresis in Lateral MAPbBr3 Devices 外源碱阳离子的掺入调节离子迁移和滞后在横向mapbbr3器件

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-25 DOI: 10.1002/aelm.70540

Hongxin Yuan, Yahong Pu, Darrell Jun Jie Tay, Si En Ng Timothy, Yanfang Zhang, Chenguang Zhang, Teddy Salim, Natalia Yantara, Shixuan Du, Nripan Mathews, Kedar Hippalgaonkar

{"title":"Incorporation of Extrinsic Alkali Cations Modulates Ion Migration and Hysteresis in Lateral MAPbBr3 Devices","authors":"Hongxin Yuan, Yahong Pu, Darrell Jun Jie Tay, Si En Ng Timothy, Yanfang Zhang, Chenguang Zhang, Teddy Salim, Natalia Yantara, Shixuan Du, Nripan Mathews, Kedar Hippalgaonkar","doi":"10.1002/aelm.70540","DOIUrl":"10.1002/aelm.70540","url":null,"abstract":"Lead halide perovskites exhibit outstanding optoelectronic properties, yet ion migration can influence device performance—detrimental in photovoltaics but beneficial in resistive-switching devices. Intrinsic ion migration has been extensively studied, whereas the effects of extrinsic alkali cations on field-driven ionic behavior remain less understood, particularly in lateral device architectures. Here, the effects of Li+, Na+, and K+ incorporation on the ionic behavior of MAPbBr3 thin films are investigated. Nanoscale and macroscopic measurements reveal cation-dependent ionic responses, which are particularly pronounced at grain boundaries and surfaces. Among the three cations, 1% Li+ incorporation shows the strongest effect, yielding higher current and more pronounced hysteresis in lateral ITO/MAPbBr3/ITO devices. The hysteresis index (Hindex) increases from ∼0.61 in the first cycle (–0.15 for the control) to ∼0.85 after 20 cycles (∼0.30 for the control), accompanied by ∼40× higher current under identical conditions. Density functional theory (DFT) calculations further show cation-dependent differences in the calculated diffusion barriers at the (100) surface and across the N–N interfacial model, with Li+ exhibiting the lowest barriers. These results indicate that extrinsic alkali-cation incorporation provides an effective approach to modulate ionic transport and hysteresis in lateral perovskite devices, offering insights for perovskite electronics where ionic effects play a key role.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70540","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible IGZO Field-Effect Transistor Biosensor Platform for Mechanically Stable and Cortisol Detection 用于机械稳定和皮质醇检测的柔性IGZO场效应晶体管生物传感器平台

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-09-09 DOI: 10.1002/aelm.70570

Ngoc Thanh Ho, Sina Jamali, Tuan-Khoa Nguyen, Nam-Trung Nguyen

{"title":"Flexible IGZO Field-Effect Transistor Biosensor Platform for Mechanically Stable and Cortisol Detection","authors":"Ngoc Thanh Ho, Sina Jamali, Tuan-Khoa Nguyen, Nam-Trung Nguyen","doi":"10.1002/aelm.70570","DOIUrl":"10.1002/aelm.70570","url":null,"abstract":"Flexible field-effect transistor (FET) biosensors based on amorphous oxide semiconductors are promising approaches for wearable biochemical monitoring. However, achieving electrical uniformity, mechanical stability, and receptor-mediated specificity simultaneously remains challenging. We report a wafer-scale fabricated indium–gallium–zinc oxide (IGZO) FET platform on a polyimide (PI) substrate for cortisol detection under liquid-gated operation. Statistical characterization across 50 devices demonstrates consistent transistor performance, with an average transconductance of 0.326 mS and an average subthreshold swing of 130.75 mV dec−1. The devices maintain stable electrical performance under bending radii of 15–30 mm and after 100 deformation cycles. The bare IGZO FET exhibits reversible pH response, confirming stable electrostatic coupling at the semiconductor–electrolyte interface. Following covalent immobilization of a cortisol-specific aptamer, the device exhibits a concentration-dependent drain current response from 10 fM to 10 µm at a constant gate bias (VG = 0.4 V). The normalized response follows a linear relationship with a slope of 0.0195 per decade. Scrambled aptamer controls and non-target analytes confirm receptor-mediated specificity. These results demonstrate a flexible IGZO FET platform capable of translating cortisol binding into reproducible electrical signals, providing a mechanically robust and electrically stable biosensing platform for wearable biochemical monitoring.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70570","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148915545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors 顶部电极金属对多层MOCVD MoS2忆阻器阻性开关的影响

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-04-30 DOI: 10.1002/aelm.202600017

Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme

{"title":"Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors","authors":"Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme","doi":"10.1002/aelm.202600017","DOIUrl":"https://doi.org/10.1002/aelm.202600017","url":null,"abstract":"Two-dimensional (2D) materials such as molybdenum disulfide (MoS2) show promise for memristor applications. Most MoS2 memristors use vertical metal/MoS2/metal stacks with gold or silver active electrodes and rely on electron-beam evaporation; sputtering is seldom used. This study investigates palladium (Pd), nickel (Ni), and aluminum (Al) as electrodes and compares resistive switching (RS) performance for sputtered versus evaporated top electrodes. Pd acts as a passive electrode with minimal contribution to RS. Devices with Ni active electrodes exhibit very low initial resistance and a small RS window, consistent with deposition-induced damage to MoS2. Sputtered Al yields highly reproducible RS in Pd/MoS2/Al memristors, achieving 95% yield across 64 devices. In contrast, evaporated Al forms a parasitic oxide at the Al/MoS2 interface that inhibits RS, even when deposited at a base pressure comparable to that of sputtered Al. Area scaling and temperature-dependent measurements indicate Al filament formation and dissolution via electrochemical metallization as the RS mechanism. Metal-specific energy barriers for filament formation explain the superior performance of sputtered Al. Overall, the results identify Al as an effective active electrode within the investigated device architecture and show that sputtering is a viable alternative for top-electrode deposition because it suppresses interfacial oxide formation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202600017","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrastable Self-Cross-linkable Electro-Optic Materials Based on a Bisanthracene Scaffold 基于双蒽支架的超稳定自交联电光材料

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-06-01 DOI: 10.1002/aelm.70447

Xingtao Wang, Zhifan Liu, Qinghua Yang, Jiayan Xu, Lin Li, Fenggang Liu, Shengyu Cong

{"title":"Ultrastable Self-Cross-linkable Electro-Optic Materials Based on a Bisanthracene Scaffold","authors":"Xingtao Wang, Zhifan Liu, Qinghua Yang, Jiayan Xu, Lin Li, Fenggang Liu, Shengyu Cong","doi":"10.1002/aelm.70447","DOIUrl":"10.1002/aelm.70447","url":null,"abstract":"In this study, self-cross-linkable chromophores TD1 and TD2 were designed and synthesized, both of which use aniline derivatives as the donor, isophorone-derived structures as the bridging unit, and trifluoromethyl-substituted TCF (CF3-TCF) as the acceptor. Among them, TD1 was functionally modified with cross-linkable alkynyl and azide groups at the donor end and bridging end, respectively, while TD2 was introduced with bianthracene groups and acrylate groups. After cross-linking, the nonlinear optical coefficients (r33) of TD1 and TD2 were 191 and 141 pm/V, respectively. Benefiting from the introduction of the bianthracene structure in TD2 molecules, its thermal stability was significantly superior to that of TD1, with a glass transition temperature (Tg) of 111.06°C, which was 50.68°C higher than that of TD1. The glass transition temperature of cross-linked TD2 was as high as 195.32°C, an increase of 51.97°C compared with TD1. After constant temperature heating at 85°C for more than 500 h, the cross-linked and poled TD2 electro-optic thin film could still retain 99.75% of its initial r33 value, indicating that its thermal stability was significantly improved compared with TD1. Therefore, TD2 is expected to be applied in advanced electronic materials under high-temperature conditions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70447","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148288386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Local Order Is Not Enough: Synthetically Accessible Polymers Reveal the Role of Side-chain Branching Point in Organic Solar Cell and Transistor Performance 局部顺序是不够的：合成可及聚合物揭示了侧链分支点在有机太阳能电池和晶体管性能中的作用

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-11 DOI: 10.1002/aelm.70521

Martina Rimmele, Xabier Rodríguez-Martínez, Zhuoran Qiao, Kaiyang Wei, Adam V. Marsh, Julianna Panidi, Nicola Gasparini, Jaime Martin, Martin Heeney

{"title":"Local Order Is Not Enough: Synthetically Accessible Polymers Reveal the Role of Side-chain Branching Point in Organic Solar Cell and Transistor Performance","authors":"Martina Rimmele, Xabier Rodríguez-Martínez, Zhuoran Qiao, Kaiyang Wei, Adam V. Marsh, Julianna Panidi, Nicola Gasparini, Jaime Martin, Martin Heeney","doi":"10.1002/aelm.70521","DOIUrl":"10.1002/aelm.70521","url":null,"abstract":"Side-chain engineering provides a powerful strategy for controlling the microstructure and electronic properties of conjugated polymers, but improved crystalline order does not necessarily translate into enhanced device performance. To investigate this, a homologous series of donor polymers, FO6-T, 3-FO6-T, 4-FO6-T, and 5-FO10-T, in which the branching point is moved progressively away from the backbone, were synthesized using a two-step protocol. Thin-film microstructure was analyzed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy, and optoelectronic properties by optical spectroscopy and electrochemical measurements. Shifting the branching point further from the backbone improved local crystal quality, evidenced by increased coherence lengths and reduced paracrystalline disorder, but resulted in a progressive deterioration in organic solar cell and thin-film transistor performance. This counterintuitive result is explained by the interplay between overall crystallinity and polymer orientation. FO6-T combines the highest overall crystallinity with a predominantly face-on orientation and outperforms the other polymers in both devices. The latter exhibit either insufficient overall crystallinity or unfavorable edge-on orientation, despite superior local crystal order. These findings demonstrate that local crystal quality alone does not ensure high device performance and highlight the branching point as a critical parameter for balancing crystallinity, orientation, and electronic coupling.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70521","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications 高探测率的GaAs/GaAsP超晶格PIN光电探测器，用于1100 nm应用

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-11 DOI: 10.1002/aelm.70528

Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron

{"title":"High-Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications","authors":"Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron","doi":"10.1002/aelm.70528","DOIUrl":"10.1002/aelm.70528","url":null,"abstract":"III-V materials exhibit superior optoelectronic properties compared to conventional semiconductors, making them ideal for short-wavelength infrared (SWIR) photodetectors. These devices are in demand for applications such as telecommunications, LiDAR, and biomedical engineering around 1100 nm wavelength, which is safer for humane eyes, minimally absorbed by the atmosphere, and resistant to ambient light interference. Despite this, semiconductor-based solutions in this range remain limited. Here, we present a strain-compensated InGaAs/GaAsP superlattice grown by metal-organic vapor phase epitaxy on a 100 mm GaAs substrate. High-quality epitaxy is confirmed by Transmission Electron Microscopy, surface morphology is analyzed by Atomic Force Microscopy, structural properties are characterized using X-Ray Diffraction, and optical characteristics are assessed via photoluminescence and absorbance. At −1 V bias, the device exhibits a low dark current density of 2.3 × 10−7 A/cm2 at room temperature and a high detectivity of 1.9 × 1011 Jones under 1100 nm excitation, with an external quantum efficiency (EQE) close to expectations. The structural and optoelectronic results demonstrate the potential for producing very thin photodetectors compared to those currently on the market with performances that can be further improved by integrating these photodetectors into resonant cavities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70528","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexomagnetic Effect in Wrinkled SrRuO3 Thin Films 皱褶srru3薄膜的柔性磁效应

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-08-20 DOI: 10.1002/aelm.70544

Liwen Zhu, Renhong Liang, Zhiguo Wang, Zhibin Wen, Longlong Shu, Fei Li, Shanming Ke

{"title":"Flexomagnetic Effect in Wrinkled SrRuO3 Thin Films","authors":"Liwen Zhu, Renhong Liang, Zhiguo Wang, Zhibin Wen, Longlong Shu, Fei Li, Shanming Ke","doi":"10.1002/aelm.70544","DOIUrl":"10.1002/aelm.70544","url":null,"abstract":"The coupling between strain gradients and magnetic spins in perovskite thin films has long been a key focus of magnetism research, representing one of the essential pathways toward the realization of functional and flexible magnetic sensors and data storage systems. In this context, we confirm that the strain-gradient-driven flexoelectric polarization can modify the magnetic moment of SrRuO3 (SRO) film. Given that conventional epitaxial methods often have some limitations (such as substrate clamping effect, localization of strain gradient), we propose to achieve controllable flexoelectric modulation of the magnetic properties in SRO thin films via employing the wrinkles. Results show that the flexoelectric polarization induced by wrinkling can modulate spin co-orientation, thereby enhancing the local magnetic properties of the SRO thin films, exhibiting opposite trends in magnetic moment variations at the crests and troughs of the wrinkles. Furthermore, the overall asymmetry of the wrinkle morphology governs the enhancement of the macroscopic magnetic properties of the SRO films; the saturation magnetization of the wrinkled film increases nearly tripling. This study offers new insights into strain gradient―spin coupling in perovskite oxides, while the introduction of wrinkle structures expands the application scope of the flexoelectric effect in the field of flexible devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70544","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-Reconfigurable Single- and Double-Dot Transport in Trilayer MoSe2 栅极可重构的三层MoSe单点和双点传输2

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-25 Epub Date: 2026-09-04 DOI: 10.1002/aelm.70564

Seungwoo Lee, Minjun Park, Yunsang Noh, Sung Jin An, Soyun Kim, Minseo Cho, Dohun Kim, Takashi Taniguchi, Kenji Watanabe, Minkyung Jung, Youngwook Kim

引用次数: 0