Advanced Electronic Materials最新文献_第5页

Elucidation of Switching Mechanisms in Memristive Junctions Integrating a Iron(II)-Ter Pyridine Diazoted Complex 阐明整合了铁(II)-三吡啶偶氮络合物的膜结中的开关机制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-06 DOI: 10.1002/aelm.202400350

Camille Jubert Tomasso, Thomas Petenzi, Anna Tidu, Rassen Boukraa, Sofia Russi, Giorgio Mattana, Christelle Gautier, Tony Breton, Ivan T. Lucas, Hubert Perrot, Laure Fillaud

引用次数: 0

Highly Resistive Biomembranes Coupled to Organic Transistors enable Ion-Channel Mediated Neuromorphic Synapses 与有机晶体管耦合的高阻生物膜可实现离子通道介导的神经形态突触

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-05 DOI: 10.1002/aelm.202400526

Joshua J. Maraj, Emily A. Schafer, Michelle M. Mansour, Essraa A. Hussein, Joseph Berryman, Elizabeth Klavon, Jonathan Rivnay, Stephen A. Sarles

{"title":"Highly Resistive Biomembranes Coupled to Organic Transistors enable Ion-Channel Mediated Neuromorphic Synapses","authors":"Joshua J. Maraj, Emily A. Schafer, Michelle M. Mansour, Essraa A. Hussein, Joseph Berryman, Elizabeth Klavon, Jonathan Rivnay, Stephen A. Sarles","doi":"10.1002/aelm.202400526","DOIUrl":"https://doi.org/10.1002/aelm.202400526","url":null,"abstract":"Organic electrochemical transistors (OECTs) functionalized with lipid membranes could enable new hybrid synapses for sensing and neuromorphic computing in biological media. However, prior attempts to pair these components resulted in low quality membranes formed on the OECT surface. We present a new method for forming a highly-resistive phospholipid bilayer coupled to a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) OECT that avoids the disruptive effects of the rough polymer surface. Transistor coupled droplet bilayers (TCDBs) formed from diphytanoyl phosphatidylcholine lipids exhibit an average specific resistance that is 1000X higher than values reported for solid-supported lipid membranes assembled on PEDOT:PSS. High membrane resistance and the addition of voltage-activated ionophores enable us to demonstrate that selective ion transport and spontaneous membrane resealing in response to dynamic gate voltage imparts selective programming and memory-storage capability to an OECT without chemical modification of the PEDOT:PSS. These capabilities enable paired-pulse facilitation and depression with writing speeds and memory retentions that are both >10X higher than previously reported with membrane-coated OECTs. The high resistance of the TCDB establishes a basis for hybrid biomolecular synapses that can integrate stimuli-responsive membranes and organic electronics for future applications in sensing, signal processing, and neuromorphic computing at the edge of biology.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"127 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions 二维卟啉金属有机框架纳米片分子异质结中的可调整流

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-05 DOI: 10.1002/aelm.202400773

Bing Huang, Xiaoyu Wang, Chaoguang He, Yongkang Zhang, Pan Qi, Ying Wang, Tong Li, Huixia Fu, Hui Wei, Cunlan Guo

{"title":"Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions","authors":"Bing Huang, Xiaoyu Wang, Chaoguang He, Yongkang Zhang, Pan Qi, Ying Wang, Tong Li, Huixia Fu, Hui Wei, Cunlan Guo","doi":"10.1002/aelm.202400773","DOIUrl":"https://doi.org/10.1002/aelm.202400773","url":null,"abstract":"As functional electrical devices advance, new strategies for regulating electrical properties are essential for achieving diverse electrical performance. In this study, molecular heterojunction rectifiers are constructed by connecting porphyrinic 2D metal–organic framework (2D MOF) nanosheets and oligophenylene thiols self-assembled monolayers (OPT SAMs) within metal electrodes. The rectification characteristics can be tuned by the molecular length of OPT and the coordinated metal atom in the center of 2D MOFs. Specifically, a rectification ratio of more than 1.67 orders of magnitude is achieved in the heterojunction composed of 2D Zn-TCPP MOF nanosheet (TCCP, tetrakis(4-carboxyphenyl) porphyrin) and OPT3 SAM. Combining Kelvin probe force microscopy measurements and first-principles calculations of the 2D MOF nanosheets, it elucidates that the rectification variations come from the adjustment of energy level alignment at OPT SAMs//2D MOF interface, leading to asymmetric charge transport with the voltage polarities. This strategy can be further extended to Cu-MOF nanosheets, which also exhibit rectification behaviors when placed on OPT2 SAMs. This work provides a universal and flexible strategy for regulating the electrical behaviors of MOFs without the need for specific design and synthesis, paving the way for the development of MOF-based functional electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"191 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Long-Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors 随机取向碳纳米管薄膜晶体管中的长沟道效应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-05 DOI: 10.1002/aelm.202400660

Hai-Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang

{"title":"Long-Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors","authors":"Hai-Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang","doi":"10.1002/aelm.202400660","DOIUrl":"https://doi.org/10.1002/aelm.202400660","url":null,"abstract":"Carbon nanotube (CNT) thin film transistors (TFTs) have demonstrated great potential for application in highly sensitive biosensors and large-area electronics. However, research on the electrical behavior of long-channel CNT TFTs is lacking; thus, the purposeful improvement in the performance of biosensors or circuits is difficult. In this study, the electrical transport characteristics of ionic-liquid-gate CNT TFTs with channel lengths (Lch) ranging from 10 to 400 µm are investigated. The CNT TFTs present classical drift-diffusion transport at on-state with a carrier mobility of around 27 cm2 V−1 s−1. In the subthreshold region of the CNT TFTs, an abnormal Lch-dependent subthreshold swing (SS) relationship, named as the long-channel effect (LCE)is observed, where SS worsens with increasing Lch. The existence of the junctions between the CNTs results in an unconventional density of states for carriers and a large series resistance for sharing the gate voltage; this dominates the abnormal scaling behavior in the subthreshold region by degrading the electrostatic integrity. The discovery of the abnormal LCE can aid in the construction of device models and purposefully improve the performance of CNT TFTs for biosensors and other large-scale electronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain Fluctuations Unlock Ferroelectricity in Wurtzites 应变波动揭开沃特兹石铁电性的神秘面纱

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-04 DOI: 10.1002/aelm.202400567

Steven M. Baksa, Simon Gelin, Seda Oturak, R. Jackson Spurling, Alireza Sepehrinezhad, Leonard Jacques, Susan E. Trolier-McKinstry, Adri C. T. van Duin, Jon-Paul Maria, Andrew M. Rappe, Ismaila Dabo

引用次数: 0

Effects of Charge Imbalance on Field-Induced Instability of HfO2-Based Ferroelectric Tunnel Junctions 电荷失衡对基于 HfO2 的铁电隧道结的场致不稳定性的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-04 DOI: 10.1002/aelm.202400299

Wonjun Shin, Chang-Hyeon Han, Jangsaeng Kim, Ryun-Han Koo, Kyung Kyu Min, Daewoong Kwon

{"title":"Effects of Charge Imbalance on Field-Induced Instability of HfO2-Based Ferroelectric Tunnel Junctions","authors":"Wonjun Shin, Chang-Hyeon Han, Jangsaeng Kim, Ryun-Han Koo, Kyung Kyu Min, Daewoong Kwon","doi":"10.1002/aelm.202400299","DOIUrl":"https://doi.org/10.1002/aelm.202400299","url":null,"abstract":"Ferroelectricity in hafnium-based materials has attracted significant research attention and is used in various applications owing to their complementary metal-oxide-semiconductor compatibility, scalability, and low-power operation. However, their widespread integration into various technologies is hindered by reliability and stability problems, particularly field-induced instability, which causes fluctuations in polarization characteristics during operation. Herein, on the underlying mechanism of field-induced instability is reported in pure hafnium oxide films within metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric tunnel junctions (FTJs). The comprehensive material analysis combined with low-frequency noise (LFN) measurements reveals that the presence of oxygen vacancies and interface traps within the ferroelectric and dielectric layers induces a charge imbalance in the FTJ, leading to distortion in its polarization characteristics and the onset of cyclic evolution in field-induced instability. Furthermore, high-pressure annealing effectively mitigates field-induced instability by reducing the defects within the film, thereby alleviating the associated charge imbalance. These findings contribute to a deeper understanding of the internal dynamics of FTJs and provide an efficient approach to enhancing their stability.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142574574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine Learning Enabled High-Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials 机器学习支持高通量筛选二维超宽带隙半导体，用于柔性电阻材料

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-04 DOI: 10.1002/aelm.202400435

Chi Chen, Hao Wang, Houzhao Wan, Dan Sun

{"title":"Machine Learning Enabled High-Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials","authors":"Chi Chen, Hao Wang, Houzhao Wan, Dan Sun","doi":"10.1002/aelm.202400435","DOIUrl":"https://doi.org/10.1002/aelm.202400435","url":null,"abstract":"The 2D ultrawide bandgap (UWBG) semiconductors have attracted great attentions for the next generation of electronics and optoelectronics, owing to their superiority on material flexibility, device stability, and power consumption. However, few 2D UWBG semiconductors have been discovered, impeding their prosperous developments and widespread applications. Here, a high-throughput workflow is constructed to screen 2D UWBG semiconductors assisted by machine learning, and 507 potential candidates are obtained. Moreover, by learning, predicting, and screening Young's modulus and Poisson's ratio, 31 flexible 2D UWBG semiconductors are identified. Then the generation and the diffusion of anion vacancies, as well as the corresponding electronic properties are investigated by using the first-principles calculations, and 3 of them are demonstrated as the most promising candidates for the flexible resistive materials. The facile interface tunneling and the increased material conductance caused by the anion vacancies will contribute to the transition from high resistive state to low resistive state. This work provides an efficient high-throughput screening protocol to enrich the family of 2D UWBG semiconductors and is expected to foster their practical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142574578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Variable-Range Hopping Conduction in Amorphous, Non-Stoichiometric Gallium Oxide 非晶、非匀质氧化镓中的可变范围跳变传导

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-03 DOI: 10.1002/aelm.202400407

Philipp Hein, Tobias Romstadt, Fabian Draber, Jinseok Ryu, Thorben Böger, Andreas Falkenstein, Miyoung Kim, Manfred Martin

{"title":"Variable-Range Hopping Conduction in Amorphous, Non-Stoichiometric Gallium Oxide","authors":"Philipp Hein, Tobias Romstadt, Fabian Draber, Jinseok Ryu, Thorben Böger, Andreas Falkenstein, Miyoung Kim, Manfred Martin","doi":"10.1002/aelm.202400407","DOIUrl":"https://doi.org/10.1002/aelm.202400407","url":null,"abstract":"Amorphous, non-stoichiometric gallium oxide (a-GaOx, x < 1.5) is a promising material for many electronic devices, such as resistive switching memories, neuromorphic circuits and photodetectors. So far, all respective measurements are interpreted with the explicit or implicit assumption of n-type band transport above the conduction band mobility edge. In this study, the experimental and theoretical results consistently show for the first time that for an O/Ga ratio x of 0.8 to 1.0 the dominating electron transport mechanism is, however, variable-range hopping (VRH) between localized states, even at room temperature and above. The measured conductivity exhibits the characteristic exponential temperature dependence on T−1/4, in remarkable agreement with Mott's iconic law for VRH. Localized states near the Fermi level are confirmed by photoelectron spectroscopy and density of states (DOS) calculations. The experimental conductivity data is reproduced quantitatively by kinetic Monte Carlo (KMC) simulations of the VRH mechanism, based on the ab-initio DOS. High electric field strengths F cause elevated electron temperatures and an exponential increase of the conductivity with F1/2. Novel results concerning surface oxidation, magnetoresistance, Hall effect, thermopower and electron diffusion are also reported. The findings lead to a new understanding of a-GaOx devices, also with regard to metal|a-GaOx Schottky barriers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142574283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scalable Fabrication of Neuromorphic Devices Using Inkjet Printing for the Deposition of Organic Mixed Ionic-Electronic Conductor 利用喷墨打印技术沉积有机离子电子混合导体，实现神经形态设备的可扩展制造

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-03 DOI: 10.1002/aelm.202400479

Fabian Gärisch, Vincent Schröder, Emil J. W. List-Kratochvil, Giovanni Ligorio

{"title":"Scalable Fabrication of Neuromorphic Devices Using Inkjet Printing for the Deposition of Organic Mixed Ionic-Electronic Conductor","authors":"Fabian Gärisch, Vincent Schröder, Emil J. W. List-Kratochvil, Giovanni Ligorio","doi":"10.1002/aelm.202400479","DOIUrl":"https://doi.org/10.1002/aelm.202400479","url":null,"abstract":"Recent advancements in artificial intelligence (AI) have highlighted the critical need for energy-efficient hardware solutions, especially in edge-computing applications. However, traditional AI approaches are plagued by significant power consumption. In response, researchers have turned to biomimetic strategies, drawing inspiration from the ion-mediated operating principle of biological synapses, to develop organic neuromorphic devices as promising alternatives. Organic mixed ionic-electronic conductor (OMIEC) materials have emerged as particularly noteworthy in this field, due to their potential for enhancing neuromorphic computing capabilities. Together with device performance, it is crucial to select devices that allow fabrication via scalable techniques. This study investigates the fabrication of OMIEC-based neuromorphic devices using inkjet printing, providing a scalable and material-efficient approach. Employing a commercially available polymer mixed ionic-electronic conductor (BTEM-PPV) and a lithium salt, inkjet-printed devices exhibit performance comparable to those fabricated via traditional spin-coating methods. These two-terminal neuromorphic devices demonstrate functionality analogous to literature-known devices and demonstrate promising frequency-dependent short-term plasticity. Furthermore, comparative studies with previous light-emitting electrochemical cells (LECs) and neuromorphic OMIEC devices validate the efficacy of inkjet printing as a potential fabrication technique. The findings suggest that inkjet printing is suitable for large-scale production, offering reproducible and stable fabrication processes. By adopting the OMIEC material system, inkjet printing holds the potential for further enhancing device performance and functionality. Overall, this study underscores the viability of inkjet printing as a scalable fabrication method for OMIEC-based neuromorphic devices, paving the way for advancements in AI hardware.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"109 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142574575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Superconductivity in Ternary Mg4Pd7As6 三元 Mg4Pd7As6 中的超导性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-03 DOI: 10.1002/aelm.202400284

Hanna Świątek, Sylwia Gutowska, Michał J. Winiarski, Bartlomiej Wiendlocha, Tomasz Klimczuk

引用次数: 0