Advanced Electronic Materials最新文献

{"title":"Ultralow Electrical Current Driven Field-Free Spin-Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators","authors":"Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu","doi":"10.1002/aelm.202500022","DOIUrl":"https://doi.org/10.1002/aelm.202500022","url":null,"abstract":"Spin-orbit torque-driven magnetic random-access memory (SOT-MRAM) is one of the promising candidates for next-generation memory technologies beyond Moore's law. Due to its separation of writing and reading channels, the 3-terminal device design significantly improves the device endurance of SOT-MRAM. However, two major challenges still exist for the perpendicular SOT-MRAM: the ultrahigh writing current density and the need for an external magnetic field to achieve deterministic switching. In this work, a 3-terminal SOT-MRAM device is demonstrated that integrates topological insulators (TIs) by perpendicular magnetic tunnel junction (pMTJ). The giant spin-orbit torque generated by spin-momentum-locked topological surface states significantly reduces the switching current density to as low as 3.0 × 10⁵ A cm⁻². The double magnetic layers with different saturation magnetizations are employed as the recording layer of TIs-pMTJ. Therefore, non-collinear canted magnetic states are generated during the current-driven SOT. By breaking the chiral symmetry of these states through interlayer Dzyaloshinskii–Moriya interaction (DMI), the field-free deterministic SOT switching is achieved. This work demonstrates the topological insulator-driven magnetic field-free SOT-MRAM with ultralow writing density, inspiring the revolution of SOT-MRAM technology from classical to quantum materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrogen Plasma Treatment for Improving Reliability of In-Ga-Zn-O Transistors Without Side Effects Through Post-Annealing Process","authors":"Taewon Seo, Juyoung Yun, Seung-Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung","doi":"10.1002/aelm.202400893","DOIUrl":"https://doi.org/10.1002/aelm.202400893","url":null,"abstract":"In this work, a novel hydrogen process is proposed to enhance the stability of IGZO transistors without side effects such as defect generation or negative threshold voltage (V_TH) shift. Conventional hydrogen treatments on IGZO transistors, including thermal annealing and plasma, typically resulted in excess hydrogen incorporation, leading to unstable states like M─OH bonds and hydrons, which degrade electrical stability. This approach integrates a post-annealing process step following plasma treatment, eliminating undesired hydrogen-related states while preserving only beneficial and stable hydrogen bonds. The hydroxyl radicals formed during hydrogen plasma are converted into highly reactive oxygen radicals in an oxygen-rich environment. These oxygen radicals subsequently passivate oxygen vacancies to form stable M─O bonds. Compared to bare devices, interface/bulk trap densities are reduced by 90% and 86%, respectively, after the hydrogen process; this is attributed to the effective removal of deep-level oxygen defects and the formation of stable M─O bonds during the post-annealing process. As a result, IGZO transistors treated with this hydrogen process showed a significant reduction in ∆V_TH under positive gate-bias and negative gate-bias illumination stresses by 83% and 62%, respectively, along with high field-effect mobility (15.14 ± 0.39 cm² V s⁻¹), subthreshold slope (90 ± 5.9 mV dec⁻¹), and I_on/I_off ratio (>10⁷).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"45 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural-Network Potential for Defect Formation Induced by Knock-On Irradiation Damage in 4H-SiC","authors":"Wei Liu, Pengsheng Guo, Ziyue Zheng, Shiyou Chen, Yu-Ning Wu","doi":"10.1002/aelm.202400911","DOIUrl":"https://doi.org/10.1002/aelm.202400911","url":null,"abstract":"Understanding the microscopic mechanism of the irradiation damage in silicon carbide (SiC) is of great importance for improving the irradiation resistance and the ion implantation processes of SiC-based devices. Currently, the atomic-scale simulations of the cascade collisions caused by irradiation in SiC are bottlenecked by the low accuracy of molecular dynamics (MD) with classical interatomic potentials and the low efficiency of ab initio MD (AIMD). In this study, a neural network potential (NNP) is constructed for the simulations of irradiation damage in 4H-SiC using the stochastic surface walking (SSW) for the potential energy surface (PES) exploration. This potential is not only able to provide accurate structural and elastic properties, but also capable of predicting the defect properties and threshold displacement energies (TDEs) that well agree with the first-principles results. More importantly, using this NNP, the directional dependence of the TDEs can be determined based on a set of high throughput calculations, and the minimal TDEs and the corresponding collision directions for Si and C can be predicted, which are in good agreement with the experimental results. This potential provides an efficient and accurate tool to accurately simulate the cascade collisions and gain fundamental understanding of the irradiation damage mechanisms of 4H-SiC.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate","authors":"Hadi Ebrahimi-Darkhaneh, Leunam Fernandez-Izquierdo, Josefina Arellano-Jimenez, Manuel Quevedo-Lopez, Sanjay K. Banerjee","doi":"10.1002/aelm.202400945","DOIUrl":"https://doi.org/10.1002/aelm.202400945","url":null,"abstract":"This study investigates the performance of thin film Ga₂O₃-based fin field-effect transistors (FinFETs) built on patterned silicon substrates. The Ga₂O₃ thin film is deposited using trimethylgallium (TMGa) ALD processes. Three devices are fabricated: one utilizing as-deposited thin film materials, another subjected to post-deposition annealing at 450°C, and a third annealed at 900°C. The electrical, optical, and material properties of the thin films and transistor devices are evaluated using a range of complementary characterization techniques, whilst the effects of post-deposition annealing at moderate (450°C) and higher temperature (900°C) are also investigated. The as-deposited device exhibited an Ion/Ioff ratio of 8.8 × 10⁶, an Ion density of 0.062 µA.µm⁻², a maximum charge carrier mobility of 3.2 cm2.V⁻¹s⁻¹, a threshold voltage (Vth) of 7.9 V, a sub-threshold swing (SS) of 590 mV.dec⁻¹, and a breakdown voltage (BVDSS) of 40 V. After annealing in N₂ atmosphere, the device annealed at 450°C displayed significant improvements, with an Ion/Ioff ratio of 8.3 × 107, Ion density of 0.14 µA.µm⁻², a maximum charge carrier mobility of 8.5 cm2.V⁻¹s⁻¹, Vth of 8.5 V, SS of 475 mV.dec⁻¹, and a remarkable BVDSS exceeding 200 V. In contrast, the 900°C annealed sample exhibited a decrease in performance, with an Ion/Ioff ratio of 1.2 × 107, Ion density of 0.023 µA.µm⁻², mobility dropping to 1.4 cm₂.V⁻¹s⁻¹, Vth of 9.2 V, and SS of 510 mV.dec⁻¹, although it maintained a breakdown voltage above 200 V. The surface morphology and materials compositions of the fabricated devices are further analyzed via a combination of scanning electron and transmission electron microscopy techniques. The obtained results confirmed a significant material transition from amorphous phase in as-deposited films into polycrystalline morphologies with noticeable grain boundaries for samples with thermal annealing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chiral Magnetic Memory Device at the 10 Nm Scale Using Self-Assembly Nano Floret Electrodes","authors":"Sheli Muzafe Reiss, Salma Khaldi, Omer Shoseyov, Shira Yochelis, Roie Yerushalmi, Yossi Paltiel","doi":"10.1002/aelm.202400919","DOIUrl":"https://doi.org/10.1002/aelm.202400919","url":null,"abstract":"As data storage demands increase, the need for highly dense memory solutions becomes crucial. Magnetic nanostructures offer a pathway to achieve dense memory devices, but standard magnetic memory bit sizes are limited to over 50 nm due to fundamental ferromagnetic properties. In this study, a 10 nm chiral magnetic memory device is introduced using a self-assembly gold nano-floret device. The device is composed of a SiGe nanowire with a selectively decorated gold metallic shell deposited at the nanowire tip. The tip with the thiol linkers functions as a weak ferromagnet particle that is stabilized by the chiral ligands. The nano-floret functions as a high geometrical aspect ratio electrode measuring 30–60 nm in diameter and 1–10 microns in length. The mechanical contact of the Au with a counter Ti electrode forms a nanojunction that can be probed electrically, bridging the gap between the nanoscale and the microscale. In this junction, chiral molecules are adsorbed together with 10 nm super-paramagnetic iron oxide nanoparticles (SPIONs) forming a magnetic memory device. The same device provides valuable insights into the chiral monolayer properties on selected metal surfaces demonstrating a new approach for characterizing the molecular tilt angle in monolayers of chiral molecules.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"92 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143880609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Thermoelectric Generators Based on Single-Walled Carbon Nanotube/Poly(aniline-co-acrylonitrile) Composites","authors":"Fuat Erden, Ilhan Danaci, Salih Ozbay","doi":"10.1002/aelm.202500026","DOIUrl":"https://doi.org/10.1002/aelm.202500026","url":null,"abstract":"Composites of polyaniline (PANI) with carbon nanotubes (CNTs) are widely studied for thermoelectric applications. In this work, acrylonitrile (AN) is incorporated into the backbone of aniline (ANI) to form a poly(ANI-co-AN) copolymer, which is in situ wrapped around the single-walled carbon nanotubes (SWNTs) to enhance the thermoelectric performance. The idea is to address the well-known inverse relationship between the Seebeck coefficient and electrical conductivity through the carrier concentration, by using the insulating nature of AN to better control the charge transport properties. The results show that the carrier concentration is reduced without deteriorating the carrier mobility in the 70% SWNT/30% poly(90ANI-co-10AN) composites as compared to pristine SWNT/PANI. Consequently, the highest power factor (PF) reached in this work is 201 µWm⁻¹K⁻² for the 70% SWNT/30% poly(90ANI-co-10AN) composite, representing a ≈1.7-fold improvement over SWNT/PANI composites prepared under identical conditions. Further, a flexible thermoelectric generator is fabricated using SWNT/poly(ANI-co-AN) composite films, demonstrating a promising output power and power density of 117 nW and 43.3 µWcm⁻², respectively, at a temperature difference of 30 K. These findings suggest that wrapping CNTs with copolymers comprising monomers of both conducting and insulating polymers can be a promising strategy to enhance the thermoelectric properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine-Learning-Assisted Understanding of Depth-Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects","authors":"Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue","doi":"10.1002/aelm.202400944","DOIUrl":"https://doi.org/10.1002/aelm.202400944","url":null,"abstract":"Lithium niobate (LiNbO₃, LN) has unique electro-optic and piezoelectric properties, making it widely used in optical devices, telecommunications, sensors, and acoustic systems. Thermal conductivity <i>κ</i> is a critical property influencing the performance and reliability of these applications. Point defects commonly exist in LN and can significantly reduce its <i>κ</i>. However, the effects of point defects on thermal transport in LN remain poorly understood. In this work, LN crystals are prepared through thermal reduction at 600–800 °C, inducing a depth-dependent distribution of oxygen vacancies (V_O) that increases in concentration with increasing reduction temperature. Time-domain thermoreflectance and square-pulsed source measurements reveal a significant suppression and a notable gradient in <i>κ</i>, attributed to the depth-dependent distribution of V_O. A machine learning potential with ab initio accuracy is developed to simulate the impact of typical point defects on thermal transport in LN, demonstrating that V_O predominantly suppresses <i>κ</i> by affecting the transport of low-frequency phonons below 6 THz. Notably, niobium vacancies and antisite defects exhibit similar effects, whereas lithium vacancies show minimal impact. This work highlights the dominant role of V_O in modulating <i>κ</i> and provides insights into defect engineering for advanced LN-based devices and similar ferroelectric crystals.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Elimination of Double-Slope Nonideality in C60 Field Effect Transistors","authors":"Xingwei Zeng, Xinyi Zhao, Jianbin Xu, Qian Miao","doi":"10.1002/aelm.202500101","DOIUrl":"https://doi.org/10.1002/aelm.202500101","url":null,"abstract":"Double-slope nonideality, widely observed in organic field-effect transistors (OFETs), leads to inaccurate extraction of field-effect mobility, hindering the evaluation of new organic semiconductors and limiting OFET applications. This study presents a solution to this issue in n-type OFETs based on C₆₀. Applying a pre-scan reversed gate-source bias (PRGSB) eliminates the double-slope nonideality. This discovery emerges serendipitously during an experiment where the source and drain connections are accidentally swapped. On the basis of the gradual formation of the active channel as the gate voltage increases, it is proposed that the double-slope nonideality stems from high-density traps in the semiconductor layer near the source electrode, presumably due to defects introduced during vacuum deposition of gold contact. The application of PRGSB injects positive charges into the dielectric layer via a large source-gate voltage. When this voltage is removed, the trapped charges act as an additional gate voltage during subsequent gate scans, filling the traps near the source and correcting the nonideality in the transfer I–V curve. These findings offer a new approach to addressing the double-slope nonideality challenge in OFET characterization and suggest an unprecedented explanation for this phenomenon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bias Induced Ambipolar Transport in Organic Heterojunction Sensors","authors":"Abhishek Kumar, Charles H. Devillers, Rita Meunier‐Prest, Dimitri Sabat, Eric Lesniewska, Marcel Bouvet","doi":"10.1002/aelm.202400865","DOIUrl":"https://doi.org/10.1002/aelm.202400865","url":null,"abstract":"Interface engineering in organic heterostructures is an important approach to tuning the characteristics of organic electronic devices and improving their performances in applications, such as gas sensing. Herein, organic heterostructures containing, a polyporphine (pZnP‐1), perfluorinated copper phthalocyanine (Cu(F<jats:sub>16</jats:sub>Pc)), and lutetium bis‐phthalocyanine (LuPc<jats:sub>2</jats:sub>) are synthesized by a combination of electrochemical and PVD methods for investigation of charge transport and ammonia (NH<jats:sub>3</jats:sub>) sensing application. pZnP‐1 is synthesized by controlled oxidative electropolymerization and reveals a rough surface, which influences the electrical nature of its interface with the phthalocyanine. The electrical properties of the heterojunction devices reveal distinct interfacial and bulk charge transport properties, which are modulated by the thickness of pZnP‐1 and the external electric field. Indeed, the heterojunction device containing a thin film of pZnP‐1 displays n‐type behavior at low bias and p‐type nature at higher bias; i.e., an ambipolar behavior, in which ambipolarity is triggered by the external electric field. On the other hand, the heterojunction device having a thick film of pZnP‐1 exhibits p‐type behavior at all the studied biases. Investigation of NH<jats:sub>3</jats:sub> sensing properties of the heterojunction devices highlights the advantages of introducing pZnP‐1 in the heterostructures, which enhances the sensitivity, stability, repeatability, and humidity tolerance of the sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal Control of Vortex Motion in Nanoscale Superconductors","authors":"Björn Niedzielski, Jamal Berakdar","doi":"10.1002/aelm.202400946","DOIUrl":"https://doi.org/10.1002/aelm.202400946","url":null,"abstract":"Thermally induced motion of vortices in nanoscale superconductors (SCs) is investigated. Using numerical and analytical methods it is shown how local heating can be mapped onto an effective driving scalar potential resembling the action of a static electric field. In particular, for a local hot spot in a micron-size SC sample, a mutual attraction is found between the vortex and the hot spot that traces back to an interaction between the superconducting condensate and the superfluid velocity. It is shown that this interaction acts as an electric field resulting in a quasi Lorentz-force on the vortex. The field dependence on the material parameters of the SC as well as on pining centers is studied. It is concluded that a large magnetic penetration depth goes along with a large superfluid velocity making the vortex-hot spot attractive force stronger and leading to a mutual amplification of field and velocity. The results and analysis point to an interesting way to simulate electric field effects via local heating.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}