Advanced Electronic Materials最新文献_第5页

Phase-Selective MOCVD of Orthorhombic Ferroelectric Gallium Oxide: Temperature-Pressure Control of Phase Stability, Crystallinity, and Ferroelectricity for Memristor Applications 正交铁电氧化镓的相位选择性MOCVD：相稳定性、结晶度和忆阻器铁电性的温度-压力控制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 DOI: 10.1002/aelm.202500747

Po-Kai Kung, Hsin-Yu Chou, Wei-Hsiang Chiang, Anoop Kumar Singh, Wen-Hao Lee, Tung-Han Wu, Po-Liang Liu, Ying-Hao Chu, Dong-Sing Wuu

{"title":"Phase-Selective MOCVD of Orthorhombic Ferroelectric Gallium Oxide: Temperature-Pressure Control of Phase Stability, Crystallinity, and Ferroelectricity for Memristor Applications","authors":"Po-Kai Kung, Hsin-Yu Chou, Wei-Hsiang Chiang, Anoop Kumar Singh, Wen-Hao Lee, Tung-Han Wu, Po-Liang Liu, Ying-Hao Chu, Dong-Sing Wuu","doi":"10.1002/aelm.202500747","DOIUrl":"https://doi.org/10.1002/aelm.202500747","url":null,"abstract":"Orthorhombic ferroelectric gallium oxide ε(κ)-Ga2O3 holds significant promise for non-volatile functionality in ultra-wide-bandgap electronics, yet achieving scalable epitaxy remains a challenge. This study establishes a quantitative materials-to-device framework by mapping the temperature-pressure landscape of metal-organic chemical vapor deposition, delineating a phase transformation map from amorphous to ε(κ) and β phases. A narrow stability window for phase-pure ε(κ)-Ga2O3 is identified between 560–590∘C and 7–23 Torr. Within this regime, phase boundaries are shown to follow an inverse T-P trade-off and an Ostwald step rule pathway. A critical kinetic threshold is established: when the growth rate exceeds ∼11-12 nm/min, the system bypasses the metastable ε(κ) phase in favor of the thermodynamically stable β phase. At the optimized condition of 570°C, the films exhibit a minimum oxygen-vacancy fraction of 2.1% and peak c-axis crystalline coherence (rocking-curve FWHM = 0.56°), which directly amplifies the ferroelectric response. Positive-Up-Negative-Down (PUND) measurements confirm a switchable polarization of 60 nC/cm2 after excluding leakage contributions. Lateral memristors fabricated from these optimized films deliver an Ion/Ioff ratio of ∼200 and robust synaptic functions, with the spike-voltage-dependent plasticity index increasing by 70 percentage points. This work provides a transferable blueprint linking process kinetics to defect chemistry and device-level performance for ε(κ)-Ga2O3 ferroelectric memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147626032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Adhesive Conductive Elastomers for Gel-Free Biopotential Recording 用于无凝胶生物电位记录的自粘导电弹性体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 DOI: 10.1002/aelm.202600004

Kirstie M. K. Queener, Alec Brewer, He Sun, Jack Twiddy, Vladimir A. Pozdin, Koji Sode, Alper Bozkurt, Michael Daniele

{"title":"Self-Adhesive Conductive Elastomers for Gel-Free Biopotential Recording","authors":"Kirstie M. K. Queener, Alec Brewer, He Sun, Jack Twiddy, Vladimir A. Pozdin, Koji Sode, Alper Bozkurt, Michael Daniele","doi":"10.1002/aelm.202600004","DOIUrl":"https://doi.org/10.1002/aelm.202600004","url":null,"abstract":"The growth of wearable electrophysiology is accelerating demand for gel-free biopotential electrodes that are skin-conformal, comfortable for extended use, and stable under typical human motion. Here we report σPOMaC, a self-adhesive, conductive, skin-compatible elastomer based on poly(octamethylene maleate (anhydride) citrate) (POMaC), a citrate-derived polyester with mechanical characteristics that are easily tunable via changes to monomer ratios and curing. Although POMaC is readily processed into soft structures, achieving robust electronic conductivity that survives curing, drying, and handling remains challenging, hindering its use in bioelectronic interfaces. To address this, we co-formulate a soft conductor, poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), with a surfactant, 4-dodecylbenzenesulfonic acid (DBSA), into the POMaC prepolymer to generate conductive σPOMaC composites. Because these additives affect processing parameters and material properties, such as curing time and viscoelasticity, we optimized composition and processing to jointly achieve high conductivity (50 S/cm; ∼ 0.02 Ω·cm), skin-appropriate adhesion (0.013 ± 0.004 N/mm on PDMS), and elastomeric compliance suitable for biopotential recording. Using optimized σPOMaC, we fabricated a custom chest patch featuring conformal ECG electrodes and demonstrated clear, high-fidelity on-body ECG waveforms comparable in morphology and timing to simultaneous recordings made using commercial Ag/AgCl electrodes. Together, these results position σPOMaC as a material platform for gel-free, self-adhesive, skin-interfaced bioelectronic electrodes, enabling simplified application and improved interface with the end-user and reducing disposable hydrogel waste in longitudinal monitoring.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147626033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Speed Flexible Schottky Diodes Based on Carbon Nanotubes 基于碳纳米管的高速柔性肖特基二极管

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2025-12-13 DOI: 10.1002/aelm.202500736

Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang

{"title":"High-Speed Flexible Schottky Diodes Based on Carbon Nanotubes","authors":"Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang","doi":"10.1002/aelm.202500736","DOIUrl":"10.1002/aelm.202500736","url":null,"abstract":"The rapid advancements in fifth and sixth-generation (5 and 6G) mobile communication networks, along with the growing demands of the Internet of Things (IoT), necessitate the development of high-speed diodes on flexible substrates. However, most of the flexible diodes with low operating frequencies are limited by relatively low material mobility, large resistance, and capacitance. In this work, we present a flexible Schottky diode (FSBD) based on high-purity semiconducting carbon nanotube (CNT) network films, offering an innovative solution to the long-standing challenge of achieving large-area, cost-effective, high-performance radio frequency (RF) diodes on flexible substrates. Using polyimide (PI) as the substrate and a low-temperature-compatible fabrication process, the CNT-based flexible Schottky diodes (CNT-FSBDs) exhibit a remarkable responsivity of 6 A/W, an intrinsic cut-off frequency of 153 GHz, and an extrinsic cut-off frequency exceeding 10 GHz at zero bias. Furthermore, the diodes achieve efficient response at low input RF power levels (−25 dBm), owing to the low resistance, zero-bias operation, and high responsivity. These features underpin the FSBDs performance in flexible, high-efficiency rectification applications. Additionally, the CNT-FSBDs exhibit excellent uniformity and stability, making them ideal for scalable manufacturing in wearable devices, large-area sensing systems, wireless energy harvesting, and next-generation communication technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500736","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145732085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre-Reduction Agent 引入预还原剂改进二氧化钼原子层沉积工艺

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2026-03-02 DOI: 10.1002/aelm.202500637

Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon

{"title":"Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre-Reduction Agent","authors":"Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon","doi":"10.1002/aelm.202500637","DOIUrl":"10.1002/aelm.202500637","url":null,"abstract":"In this study, the molybdenum dioxide (MoO2) as a promising electrode material for next-generation semiconductor memory devices is investigated. A pre-reduction agent is introduced into the MoO2 atomic layer deposition (ALD) process to prevent surface morphology degradation occurring during crystallization. The chemical changes in MoO2 thin films upon the application of the pre-reduction agent are analyzed, thereby elucidating the role of the pre-reduction agent in MoO2 ALD. With the use of the pre-reduction agent, the Mo6+ corresponding to molybdenum trioxide (MoO3) decreased, while that of Mo5+ corresponding to MoOx (2 < x < 3) increases in the as-deposited state. Accordingly, the MoOx thin film is partially reduced in the as-deposited state, suppressing surface morphology degradation during the annealing process. The improved surface morphology of MoO2, MoO2/TiO2 thin film, enhances the electrical performance of MoO2/TiO2-based metal-insulator-metal (MIM) capacitors. The insights into the role and mechanism of the pre-reduction agent contribute to the development of optimized MoO2/TiO2-based MIM capacitors, providing significant progress toward addressing the challenges and enhancing the performance of next-generation semiconductor memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500637","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving Directional Oil Manipulation by Open Inducing Structure for Electrowetting Displays 利用开放式感应结构实现电润湿显示器的定向油操纵

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2026-03-08 DOI: 10.1002/aelm.202500843

Qilu Li, Yuxin You, Tinghong Yang, Simin Ma, Wenzhen Chen, Yuhuai Yang, Guofu Zhou, Jiawei Lai, Dong Yuan

{"title":"Achieving Directional Oil Manipulation by Open Inducing Structure for Electrowetting Displays","authors":"Qilu Li, Yuxin You, Tinghong Yang, Simin Ma, Wenzhen Chen, Yuhuai Yang, Guofu Zhou, Jiawei Lai, Dong Yuan","doi":"10.1002/aelm.202500843","DOIUrl":"10.1002/aelm.202500843","url":null,"abstract":"Oil movement control is crucial for optimizing the optical performance of electrowetting display (EWD) devices. Herein, an open inducing structure (OIS) is introduced, which is directly formed by photoembossing of dielectric layer materials into EWD pixels, aiming to regulate oil dynamics by inducing local electric field inhomogeneity. The OIS is designed with a frustum-shaped profile, circumventing secondary processing requirements and abrupt aperture ratio changes associated with traditional cylindrical notch structures. Optimal height of OIS is in the range of 10%–30% of the pixel wall height. Utilizing photoembossing combined with predefined mask patterns enables precise control of the structure's position, quantity, and height. Experimental results demonstrate that this OIS effectively reduces the oil aperture voltage, guides directional oil movement, and enhances the device's optoelectronic performance without compromising the aperture ratio. This study provides a versatile and scalable oil control strategy for EWD devices, offering broad device compatibility.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500843","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147374234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution Processed Polymer Source-Gated Transistors for Zero-Power Photosensing 用于零功率光敏的溶液处理聚合物源门控晶体管

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2026-03-19 DOI: 10.1002/aelm.202500813

Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea

{"title":"Solution Processed Polymer Source-Gated Transistors for Zero-Power Photosensing","authors":"Eva Bestelink, Ahmed Wafic, Mattia Scagliotti, Dimitar Kutsarov, Imalka Jayawardena, Matteo Rapisarda, Radu A. Sporea","doi":"10.1002/aelm.202500813","DOIUrl":"10.1002/aelm.202500813","url":null,"abstract":"This study demonstrates the first solution-processed bulk heterojunction organic source-gated transistors (OSGTs) and photo-OSGTs fabricated using a poly(N-alkyl diketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene):[6,6]-phenyl-C61-butyric acid methylester (DPP-DTT: PCBM) blend. Copper-electrode OSGTs fabricated alongside reference transistors with Ag contacts are investigated via electrical and optical measurements and further analysed using numerical simulations. OSGTs show uniform enhancement-mode operation with a nominal threshold voltage of −17.4 V, deep off-state at zero gate-source voltage (tens of pA), channel length-independent current in the on-state, and low voltage saturation (saturation coefficient γ = 0.22). Cu-contact photo-OSGTs achieve a photo-to-dark current ratio (PDCR) over 3400 at zero gate-source voltage 0 VGS, vs. VGS ∼20 V for Ag devices. Simulations show that the primary causes of current nonuniformity and occasional loss of contact control are the inhomogeneity of the source contact barrier and/or thickness of the active layer, and not the channel length. Design optimizations should consider spin-coating thickness variability, possible Cu-active interface effects, and leakage induced by the high electric fields present at the source edge. Performance should improve further when channel length is kept short, and contact interlayers or dual work function electrodes are adopted.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500813","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Printed Flexible WO3-Based Supercapacitors for Powering Low-Powered Electronics in Wearable Devices and Energy Autonomous Temperature Monitoring 印刷柔性wo3基超级电容器，用于为可穿戴设备中的低功耗电子设备供电和能源自主温度监测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 DOI: 10.1002/aelm.202500886

Jithin Kanathedath, Adarsh Sivan Pillai, Febin Paul, Prasutha Rani Markapudi, Nazmi Sellami, Firdaus Muhammad-Sukki, Libu Manjakkal

{"title":"Printed Flexible WO3-Based Supercapacitors for Powering Low-Powered Electronics in Wearable Devices and Energy Autonomous Temperature Monitoring","authors":"Jithin Kanathedath, Adarsh Sivan Pillai, Febin Paul, Prasutha Rani Markapudi, Nazmi Sellami, Firdaus Muhammad-Sukki, Libu Manjakkal","doi":"10.1002/aelm.202500886","DOIUrl":"https://doi.org/10.1002/aelm.202500886","url":null,"abstract":"Wearable electronic systems require flexible and manufacturable energy storage devices that can be integrated with printed sensors and electronics. In this work, a flexible supercapacitor (FSC) is fabricated by direct screen printing of WO3 electrodes, providing a scalable and manufacturing-compatible route for WO3-based flexible electrochemical energy storage devices. The screen-printed WO3-based FSC exhibits stable charge-storage behavior with contributions from electric double-layer capacitance (47.22%) and pseudocapacitive processes (52.78%). The device delivers a specific capacitance of 3.44 F g−1 (18.58 mF cm−2) at 0.05 mA, decreasing to 2.25 F g−1 (12.19 mF cm−2) at 0.5 mA, indicating good rate capability. An energy density of 0.302 Wh kg−1 and a power density of 3.68 W kg−1 are achieved at 0.05 mA. The FSC maintains consistent electrochemical performance under mechanical deformation at bending angles of 0°, 15°, 25°, 35°, and 45°. Finally, the FSC is integrated with a solar cell and a temperature sensor to demonstrate energy-autonomous wearable temperature monitoring.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"117 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147626031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation 电阻式随机存取存储器中Ta2O5中Ru和氧空位的扩散特性：密度泛函理论研究

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2025-05-08 DOI: 10.1002/aelm.202500128

Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy

{"title":"Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation","authors":"Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy","doi":"10.1002/aelm.202500128","DOIUrl":"10.1002/aelm.202500128","url":null,"abstract":"The resistive switching behavior of memristors is primarily determined by the characteristics of their mobile species, with balancing retention and switching energy being a significant challenge. Ruthenium (Ru) has recently emerged as a potential mobile species, enabling low switching currents, rapid operation, and good retention, addressing critical issues in next-generation memory systems. However, understanding the atomistic details of Ru diffusion in oxides remains lacking but critical for interpreting its promising experimental device behavior. Here, we conduct a comprehensive atomistic analysis of Ru and oxygen vacancy (OV) diffusion in Ta2O5-based memristors utilizing density functional theory computations. Our findings reveal that Ru-doping at interstitial sites demonstrates a noticeably lower diffusion barrier than OVs, signifying improved mobility under an electric field. This underscores the emergence of Ru-based conductive filaments as a crucial mechanism for memristive switching. Formation energy analyses indicate that Ru ions possess lower formation energies than OVs, improving their thermodynamic stability and mobility within the oxide matrix. Moreover, electronic structure studies reveal significant alterations in the local density of states near the Fermi level around Ru and OV sites, influencing the material's conductive properties. These findings establish a strong basis for optimizing Ru-based memristive devices for next-generation memory technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500128","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143920933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs 氟化单层栅极-介电表面工程：最小化ofet的接触电阻和非理想性

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2025-09-04 DOI: 10.1002/aelm.202500260

Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas-Torrent, Esther Barrena

{"title":"Gate-Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs","authors":"Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas-Torrent, Esther Barrena","doi":"10.1002/aelm.202500260","DOIUrl":"10.1002/aelm.202500260","url":null,"abstract":"Organic field-effect transistors (OFETs) hold great potential for flexible, large-area electronics, but face challenges related to hysteresis in the transfer characteristics, contact resistance, and charge trapping. This study examines the growth and electrical properties of 2-decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) organic-semiconductor films on Al2O3 as gate dielectric, focusing on the effects of surface functionalization with a self-assembled monolayer (SAM) of either a non-fluorinated or a more or less strongly fluorinated phosphonic acid. This functionalization of the gate dielectric surface is found not to significantly affect the structural organization of Ph-BTBT-10 thin films grown at room temperature. Thin films grown at room temperature exhibit a single-layer lamella with a step height of 26.7 Å, although there is evidence of a bilayer arrangement at the semiconductor-dielectric interface. Remarkably, the use of Al2O3 functionalized with a fluorinated SAM leads to significant improvements in OFET performance, including near-zero threshold voltages, reduced hysteresis, reduced contact resistance, and more ideal electrical characteristics compared to bare Al2O3. This work highlights the significant yet non-trivial benefits of gate-dielectric surface functionalization in reducing contact resistance and mitigating non-ideal behaviors in OFETs, offering an alternative to traditional approaches like contact doping or functionalization of the source/drain contacts in bottom-contact organic thin-film transistors (TFTs).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500260","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144995230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering 迈向可靠的金属卤化物钙钛矿场效应管：从电子结构和器件物理到稳定性和性能工程

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-06 Epub Date: 2026-02-11 DOI: 10.1002/aelm.202500568

Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros-Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou

{"title":"Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering","authors":"Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros-Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou","doi":"10.1002/aelm.202500568","DOIUrl":"10.1002/aelm.202500568","url":null,"abstract":"Metal halide perovskite field-effect transistors (PeFETs) have rapidly gained recognition as leading candidates for next-generation electronic and optoelectronic technologies, owing to their exceptional optoelectronic properties, facile solution processability, and notable mechanical flexibility. Nevertheless, the practical deployment of high-performance PeFETs is significantly impeded by persistent challenges, including ion migration, hysteresis effects, and environmental instability, which collectively hinder their widespread adoption. This review offers a thorough and up-to-date overview of recent progress in the field of PeFETs, with particular emphasis on advances in material engineering, device architecture optimization, and innovative processing techniques designed to enhance device performance. The discussion encompasses the fundamental physics governing charge transport in perovskite semiconductors, with a focus on the influence of defect chemistry, interface engineering, and stability considerations. Special attention is devoted to a comparative analysis of tin-based and lead-based PeFETs, elucidating their respective charge transport mechanisms, benefits, and limitations. The review concludes by identifying the principal challenges and outlining future research directions that are essential for realizing the full potential of perovskite transistors in delivering high-speed, flexible, and cost-effective electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500568","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146153367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0