Advanced Electronic Materials最新文献

{"title":"A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration","authors":"Jingye Xie, Qinyuan Wang, Junchen Dong, Dedong Han, Xing Zhang","doi":"10.1002/aelm.202500286","DOIUrl":"https://doi.org/10.1002/aelm.202500286","url":null,"abstract":"A two‐step thermal annealing treatment strategy is proposed to enhance the electrical performance of the InAlZnO (IAZO) transistors, where the devices are initially pre‐annealing at 400 °C for 30 min, followed by a second annealing step across a wide temperature range of 200–500 °C. The optimized IAZO transistors exhibit excellent electrical properties, including a field‐effect mobility of 59.31 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>, a subthreshold swing of 68.56 mV per decade, a turn‐on voltage of −0.74 V, an off‐state current below 100 pA, and an on‐to‐off current ratio over 10<jats:sup>7</jats:sup>. The devices show excellent bias stress stability and thermal stability as well. By Hall measurement, X‐ray photoelectron spectroscopy, and atomic force microscopy characterization analysis, it is found that two‐step annealing treatment stabilizes carrier concentration and smooths surface of the IAZO active layer. Furthermore, the inverters and 9‐stage ring oscillators based on the IAZO transistors are demonstrated. This work promotes the application of the oxide transistors in back‐end‐off‐line and monolithic 3D integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144500788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Regular and Inverted Hysteresis in Organic Electrochemical Transistors: Mechanisms and Electrochemical Insights","authors":"Ramesh Kumar, Marcos Luginieski, Ankush Kumar, Henrique Frulani de Paula Barbosa, Andreas Schander, Gregório Couto Faria, Björn Lüssem","doi":"10.1002/aelm.202500176","DOIUrl":"https://doi.org/10.1002/aelm.202500176","url":null,"abstract":"Organic electrochemical transistors (OECTs) are one of the most versatile electronic devices, offering great potential applications from bioelectronics and smart sensors to analog neuromorphic computing, owing to their unique electronic‐ionic coupling characteristics. However, despite their considerable success, the complex interplay between electronic and ionic charge carriers leads to various anomalous device behaviors that are still poorly understood, hindering their practical application. For instance, OECTs often exhibit different hysteresis behaviors in their transfer characteristics and asymmetry in switching during turn‐on and turn‐off operations. Herein, the evolution of hysteresis in the transfer curves of OECTs as a function of delay time and channel length is systematically investigated, employing a range of electrochemical measurements. The findings reveal that the transition from regular hysteresis to inverted hysteresis is governed by the interplay between ion injection and extraction dynamics, which is closely linked to the open circuit potential (OCP) of the electrolyte‐semiconductor interface. This work provides valuable electrochemical insights into the device physics of OECTs, paving the way for future optimization and advancement of these devices for practical implications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"58 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Strategic Approach for Enhanced p‐Type Doping of WSe2 p‐MOSFETs Using an Atomic Oxidation Process","authors":"Dongjea Seo, Shivanshu Mishra, Ruixue Li, Jiaxuan Wen, Seung Gyo Jeong, Brayden Lukaskawcez, Seungjun Lee, Tony Low, Alexander S. McLeod, Bharat Jalan, Steven J. Koester","doi":"10.1002/aelm.202500108","DOIUrl":"https://doi.org/10.1002/aelm.202500108","url":null,"abstract":"Doping allows precise tuning of the electronic properties in 2D materials, optimizing their performance for applications such as complementary metal‐oxide‐semiconductor (CMOS) technology. However, developing reliable <jats:italic>p</jats:italic>‐type 2D semiconductors remains challenging due to intrinsic defects or unintentional <jats:italic>n</jats:italic>‐type doping. This study presents robust <jats:italic>p</jats:italic>‐type monolayer WSe<jats:sub>2</jats:sub> field‐effect transistors (FETs) using phase‐engineered WSe<jats:sub>2</jats:sub>/WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> building blocks created via an atomic oxidation process (AOP). The findings reveal that when bilayer WSe<jats:sub>2</jats:sub> is exposed to AOP, the top layer undergoes self‐limited oxidation to WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> with no detectable oxidation of the bottom layer. This result is confirmed by Raman spectroscopy, X‐ray photoelectron spectroscopy, and Kelvin probe force microscopy. This process has further been used to demonstrate a well‐controlled and fully encapsulated WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic>/WSe<jats:sub>2</jats:sub>/WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> heterostructure, ensuring symmetrical protection and stability of the WSe<jats:sub>2</jats:sub> channel region. The surface charge transfer doping using WSe<jats:italic><jats:sub>y</jats:sub></jats:italic>O<jats:italic><jats:sub>x</jats:sub></jats:italic> provides the capability to selectively modulate the carrier concentration in a WSe<jats:sub>2</jats:sub> without altering the intrinsic properties of the channel. This non‐destructive method simplifies the fabrication of <jats:italic>p</jats:italic>‐type 2D FETs with monolithic, phase‐engineered heterostructures, facilitating seamless integration into next‐generation device architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Unprecedented Impulse‐Type Response of Ferroelectric Nematic Liquid Crystals under In‐Plane Switching","authors":"Yuji Kinose, Shigemasa Nakasugi, Junji Watanabe, Yoshinobu Tsujii, Osamu Sato","doi":"10.1002/aelm.202500153","DOIUrl":"https://doi.org/10.1002/aelm.202500153","url":null,"abstract":"The orientation and electro‐optical properties of in‐plane switching liquid crystal displays (IPS LCDs) filled with a newly developed ferroelectric nematic liquid crystal (N<jats:sub>F</jats:sub>LC), 3FM‐C4T, are investigated. The 3FM‐C4T‐based IPS LCDs exhibit a uniform, homogeneous orientation and robust orientation stability, equivalent to those of nematic LCs. In addition, unlike conventional nematic LCDs, a fast‐response impulse‐type transmission efficiency (<jats:italic>TE</jats:italic>) modulation occurs in LCDs with 3FM‐C4Ts, in which the <jats:italic>TE</jats:italic> changes only for a moment when the polarity of the applied voltage reverses. The novel impulse‐type <jats:italic>TE</jats:italic> modulation is identified for the first time and differs from the impulse‐type emission observed in self‐luminous displays in the sense that the <jats:italic>TE</jats:italic> increases and decreases during an ON signal. This phenomenon occurs because the polarization vector of the 3FM‐C4Ts, which are oriented symmetrically with no voltage, becomes asymmetric under the application of an electric field below the coercive electric field, resulting in shielding voltage for the 3FM‐C4T layer via the polarization of the thin polyimide alignment layer and a corresponding decrease in the effective applied voltage to the 3FM‐4CTs. The proposed LC device effectively improves the image quality of LCDs and is useful for many other applications requiring fast‐response impulse‐type <jats:italic>TE</jats:italic> and polarization modulation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Added Ni Nanoparticles on the Microstructure and Mechanical Properties of Sn58Bi/Cu Solder Joints under Thermal Shock Conditions","authors":"Jiamin Zhang, Liang Zhang, Yuhao Chen, Weimin Long, Yunxin Liu","doi":"10.1002/aelm.202500197","DOIUrl":"https://doi.org/10.1002/aelm.202500197","url":null,"abstract":"Comprehensive properties of Sn58Bi/Cu and Sn58Bi‐0.6Ni/Cu solder joints were systematically investigated after 200, 400, 600, 800, 1000, and 1200 thermal shock cycles ranging from 218 K to 398 K. The results revealed that the Bi‐rich phase of all solder joints exhibited a coarsening trend due to atomic diffusion mechanisms. The intermetallic compound (IMC) layer increased thicker as the thermal shock cycles increased. The IMC thickness of Sn58Bi/Cu solder joints increased by 9.14µm, whereas that of Sn58Bi‐0.6Ni/Cu solder joints added 11.25µm, after 1200 cycles. Notably, the IMC thickness of Sn58Bi‐0.6Ni/Cu joints always exceeded Sn58Bi/Cu joints. Furthermore, significant cracks were noticed at the IMC interface of Sn58Bi/Cu joints, whereas this phenomenon was nearly absent in Sn58Bi‐0.6Ni/Cu joints, suggested that the incorporation of Ni nanoparticles enhanced joint reliability. The IMC grains of Cu<jats:sub>6</jats:sub>Sn<jats:sub>5</jats:sub> and (Cu, Ni)<jats:sub>6</jats:sub>Sn<jats:sub>5</jats:sub> in both joint types gradually coarsened. However, the size of (Cu, Ni)<jats:sub>6</jats:sub>Sn<jats:sub>5</jats:sub> grains remained consistently smaller than that of Cu<jats:sub>6</jats:sub>Sn<jats:sub>5</jats:sub> grains. Additionally, the strength of Sn58Bi solder joints decreased from 38.21 MPa to 11.17 MPa, while that of Sn58Bi‐0.6 Ni solder joints decreased from 40.86 MPa to 17.29 MPa. The Sn58Bi‐0.6Ni/Cu solder joints consistently exhibited greater shear strength in comparison to the Sn58Bi/Cu joints under identical conditions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless, Battery-free, Implantable Inductor-Capacitor Based Sensors","authors":"Baochun Xu,&nbsp;Cunjiang Yu","doi":"10.1002/aelm.202500184","DOIUrl":"10.1002/aelm.202500184","url":null,"abstract":"<p>The growing demand for reliable and minimally invasive health monitoring technologies has driven the development of advanced implantable devices. Traditional systems relying on batteries and wires face challenges such as limited lifespan, complexity, and risks of complications. Inductor-capacitor (LC) sensors offer a compelling alternative that uses simple resonant circuits to achieve battery-free and wireless operation. These sensors function through magnetic coupling with external readers, eliminating the need for internal power sources or physical connections, while enabling compact and biocompatible designs. This review begins by introducing the fundamental principles and key design considerations of LC sensors, including material selection, geometric constraints, and implantation methods. It then examines their examplary applications, such as intracranial pressure monitoring, intraocular pressure measurement, tissue mechanics assessment, and tumor microenvironment analysis among others. Finally, this review discusses the challenges and future directions for implantable LC sensor technologies, emphasizing the importance of mechanism and material innovation, scalability and multifunctionality, and integration with digital healthcare systems to meet the demands of health monitoring.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500184","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144341467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sidewall Suppression and Top Surface Enhancement of Light Extraction Efficiency in Vertically Stacked Full-Color Micro-LEDs Based on L-Shaped Metal Walls","authors":"Huachang Guo, Jun He, Jie Sun, Kaixin Zhang, Zhonhang Huang, Tailiang Guo, Qun Yan, Victor Belyaev, Aslan Abduev, Alexander Kazak","doi":"10.1002/aelm.202500214","DOIUrl":"https://doi.org/10.1002/aelm.202500214","url":null,"abstract":"Micro light-emitting diodes (Micro-LEDs) are regarded as the core of next-generation display technology due to their high brightness and energy efficiency. However, the reduction in the size of Micro-LEDs has led to increased manufacturing challenges and exacerbated issues such as sidewall emission, which hinder the development of high-pixel-density displays. This paper proposes a vertically stacked Micro-LED design based on an L-shaped metal wall structure, aiming to suppress sidewall emission and enhance top light extraction efficiency (LEE). Through parameter scanning, the dimensions of the Micro-LED and the thickness of the epitaxial layer are optimized. Combined with inclined sidewalls and the reflective structure of the L-shaped metal wall, the optical characteristics of red, green, and blue Micro-LEDs are analyzed using ray-tracing simulations. The sidewall emission is significantly reduced (with a maximum reduction of 68.04% compared to vertically stacked Micro-LEDs without metal walls), and top light emission is enhanced (the LEE within ±90° direction for blue, green, and red light increased by 196.18%, 51.69%, and 3.45%, respectively, compared to stacked Micro-LEDs without metal walls). The simulation results demonstrate the potential of the L-shaped metal wall in vertically stacked full-color Micro-LED displays, providing a new approach to suppressing optical crosstalk and improving display performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144340850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vertical Electrolyte-Gated Transistors: Structures, Materials, Integrations, and Applications","authors":"Bin Bao,&nbsp;Ting Zhang,&nbsp;Junlei Xie,&nbsp;Jin Wu,&nbsp;Gang He,&nbsp;Lang Jiang,&nbsp;Yanlin Song,&nbsp;Shouguo Wang","doi":"10.1002/aelm.202400955","DOIUrl":"10.1002/aelm.202400955","url":null,"abstract":"<p>Biological synapse-inspired electrolyte-gated transistors have received broad attention recently as a competitive candidate for constructing artificial intelligence (AI) systems to meet the data memorizing and processing challenges brought by the big data era. Vertically structured electrolyte-gated transistors, which decouple the channel length of the transistors from the resolution of photolithography and printing techniques, enjoy significantly improved electrical performances compared to their planar counterparts. The vertical electrolyte-gated transistors (vEGTs) are constructed in different device architectures by diverse materials, and integrated into circuits with hierarchical level of sophistication. Benefiting from their unique device structures, a wealth of available component materials and integration strategies, vEGTs are finding their pathway toward diverse applications such as synaptic emulating, neuromorphic computing, and biological sensing. Herein, recent progress on the vEGTs is reviewed. Three typical device structures for the vEGTs are categorized and exemplified. The materials used to construct the semiconductor channels and the ion-conducting electrolytes are presented. The electrical performances of typical vEGTs are briefly discussed. The integration strategies and application fields of the vEGTs are summarized. At the end, the challenges for the further development of advanced vEGTs are discussed.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400955","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144341466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Influence of Magnetothermal Stimulation on Viability of Cells in 2D Cultures and 3D Magnetic Collagen Gels","authors":"Shahar Shalom, Ekaterina Kuznetsova, Gal Shklarski Shchori, Shir Sasson, Noa Frides, Ariella Nouman, Dekel Rosenfeld","doi":"10.1002/aelm.202500105","DOIUrl":"https://doi.org/10.1002/aelm.202500105","url":null,"abstract":"Magnetic nanoparticles (MNPs) hold great promise for bioelectronic medicine, particularly as transducers of remote activation to control cell function. MNPs in the 20–30 nm size range efficiently dissipate heat under alternating magnetic fields (AMFs), enabling control of heat-sensitive receptors that regulate electrogenic cell signaling. However, effective magnetothermal stimulation tools must maintain cell viability and optimally deliver heat to the cellular microenvironment. Moreover, improved in vitro models, particularly 3D cultures that better mimic the cell microenvironment, are needed to assess magnetothermal stimulation before transitioning to in vivo demonstrations. This study examined cell viability under AMF conditions with different heating rates and stimulation durations. In addition, a tunable magnetic collagen gel is developed to support magnetothermal stimulation while allowing control over heat dissipation and mechanical properties by adjusting MNP concentration inside the gel. Cells embedded within the stimuli-responsive magnetic gel exhibited proliferation and cytoskeletal organization, suggesting its suitability as a biological implant. These findings advance the design of magnetothermal stimulation systems and pave new avenues for bioelectronic medicine, including the integration of magnetic implants in cell therapies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144340852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-Materia Neuromorphic Properties Induced by Locally Denatured Regions in Sulfonated Polyaniline Networks Incorporating Au Nanoparticles","authors":"Yuki Usami, Tomoyo Fukumaru, Yuya Kawashima, Tomoki Misaka, Yoichi Otsuka, Hiroshi Ohoyama, Yasuhisa Naitoh, Takuya Matsumoto","doi":"10.1002/aelm.202400699","DOIUrl":"https://doi.org/10.1002/aelm.202400699","url":null,"abstract":"Neuromorphic computation has the potential to reduce the energy and resource costs associated with conventional digital computing. Nanomaterials are highly suited for use in neuromorphic computing devices. In this study, locally-doped sulfonated polyaniline networks incorporating Au-nanoparticle (SPAN–AuNP networks) are investigated using multiple microscale Au electrodes. Raman spectroscopy results of the SPAN–AuNP networks indicate that the SPAN molecules are partially dedoped in the regions surrounding the AuNPs. These dedoped regions act as bottlenecks for the hopping conduction path and lead to diverse nonlinear current–voltage characteristics that are dependent on the combination of the electrodes used, suggesting percolative conduction. The bottlenecks also act as charge-trapping sites that impart long-term hysteresis properties and enable the realization of a sum-of-products function. These results indicate that the design-less SPAN–AuNP networks exhibit neuromorphic behavior similar to that of spiking neurons and thus have potential applications in in-materia computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144312053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}