Advanced Electronic Materials最新文献

{"title":"Ultrafast Dynamics of Electronic and Structural Modifications Induced by Photoexcitation in Cerium Oxide","authors":"Samuele Pelatti, Eleonora Spurio, Daniele Catone, Patrick O'Keeffe, Stefano Turchini, Giuseppe Ammirati, Fulvio Paleari, Daniele Varsano, Stefania Benedetti, Alessandro di Bona, Sergio D'Addato, Yifeng Jiang, Peter Zalden, Yohei Uemura, Hao Wang, Doriana Vinci, Xinchao Huang, Frederico Lima, Mykola Biednov, Dmitry Khakhulin, Christopher Jackson Milne, Federico Boscherini, Paola Luches","doi":"10.1002/aelm.202500429","DOIUrl":"https://doi.org/10.1002/aelm.202500429","url":null,"abstract":"Pump-probe spectroscopies utilizing X-ray free-electron lasers offer element-specific insights into the processes occurring in photocatalysts following photoexcitation, which are essential for the rational optimization of the efficiency of these materials. This study examines the dynamic evolution of the electronic and atomic structure in stoichiometric cerium oxide films following photoexcitation, employing ultrafast pump-probe X-ray absorption spectroscopy (XAS) at the Ce L₃ edge in both the near-edge and extended energy ranges using an X-ray free electron laser. The results reveal a rapid relaxation pathway occurring within the first few hundred femtoseconds, followed by the formation of an excited state with a lifetime on the order of hundreds of picoseconds. The analysis of pump-probe XAS in the extended energy range identifies a structural distortion consistent with the formation of a photoinduced small polaron state. The observed time correlation between the photoinduced electronic and structural changes further reinforces the hypothesis of photoinduced polaron formation. Constrained density functional theory simulations offer insights into the electronic modifications and structural distortions in the photoexcited material. The consequences of the observed processes on material functionality are discussed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145083907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sign Competing Sources of Berry Curvature and Anomalous Hall Conductance Humps in Topological Ferromagnets","authors":"Wojciech Brzezicki, Carmine Autieri, Mario Cuoco","doi":"10.1002/aelm.202500307","DOIUrl":"https://doi.org/10.1002/aelm.202500307","url":null,"abstract":"The use of Berry-phase concepts has established a strong link between the anomalous Hall effect (AHE) and the topological character of the Hall currents. However, the occurrence of sign competition in the Berry curvature often hinders the topological origin of the observed anomalous Hall effects. Here, a 2D topological ferromagnet is studied with coupled spin and orbital degrees of freedom to assess the anomalous Hall effects in the presence of sign-competing sources of Berry curvature. It is shown that itinerant topological ferromagnets can generally lead to topological metallic bands marked by a non-zero Chern number. It is found that the resulting Berry curvature exhibits a characteristic anisotropic profile with a non-monotonous angular dependence. The sign change of the intrinsic contribution to the anomalous Hall conductance can occur together with topological transitions or be driven by the population imbalance of the topological bands. The breaking of the inversion symmetry introduces the orbital Rashba coupling in the system. The interplay between the orbital Rashba and sign competing sources of Berry curvature leads to anomalies in the anomalous Hall conductance at values of magnetic fields for which the magnetization switches its orientation. The humps in topological ferromagnets arise when the anomalous Hall conductivity is small in absolute value and they can be detected only far from half-filling. This study can be relevant for the family of the topological 2D ferromagnets as well as Weyl ferromagnets, and can particularly account for the variety of unconventional behaviors observed in ultrathin films of SrRuO₃.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"80 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable Anomalous Hall Effect in Non‐Magnetic Topological Semimetal Cd3As2 Nanoplates","authors":"Xin‐Jie Liu, Liang Xiong, Jia‐Peng Peng, Xiang‐Long Yu, Yan‐Fei Wu, Shuo Wang, Ben‐Chuan Lin, Shou‐Guo Wang","doi":"10.1002/aelm.202500384","DOIUrl":"https://doi.org/10.1002/aelm.202500384","url":null,"abstract":"The emergence of topology has profoundly transformed condensed matter physics, driving the discovery of topological materials, including topological semimetals. Here, we report the observation of gate‐tunable anomalous Hall effect (AHE) in the non‐magnetic Dirac semimetal Cd<jats:sub>3</jats:sub>As<jats:sub>2</jats:sub>. The anomalous Hall conductivity reaches the maximum when the gate voltage is near the Dirac point. Fitting the anomalous Hall resistivity using the scaling relationship of AHE reveals that the AHE in Cd<jats:sub>3</jats:sub>As<jats:sub>2</jats:sub> is dominated by the intrinsic contribution of Berry curvature. Our results are valuable for understanding AHE in topological semimetals and could have possible potential applications in topological devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145072172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High-Bit RIS","authors":"Jun Wei Zhang, Zheng Xing Wang, Wanwan Cao, Zhen Jie Qi, Li Jie Wu, Han Qing Yang, Qun Yan Zhou, Si Ran Wang, Hui Dong Li, Jun Yan Dai, Jiang Luo, Jun Wei Wu, Jia Nan Zhang, Zhen Zhang, Qiang Cheng","doi":"10.1002/aelm.202500446","DOIUrl":"https://doi.org/10.1002/aelm.202500446","url":null,"abstract":"High-performance reconfigurable intelligent surfaces (RISs) are growing in significance for practical applications. However, current design methods typically accommodate one or two properties of RISs, and reliance on time-consuming and burdensome full-wave simulations slows down design efficiency. To overcome these limitations, we propose a general and efficient framework for the rapid design of high-performance RISs. It integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high-performance RISs. To boost efficiency, the framework leverages a multi-port network model to quickly obtain the electromagnetic (EM) responses of RIS units with various loads and employs the genetic algorithm for fast optimization of desired units. For validation, we designed a miniaturized, wideband, and high-bit RIS unit using this framework. It achieves 4-bit phase modulation, 23% relative bandwidth and a <i>λ</i>/5 size. A RIS prototype with a size of 20×10 was designed, simulated, and measured based on this unit. All results are in good agreement, demonstrating effective beam scanning from -50° to 50°. The entire design process takes only 1.2 hours and one full-wave EM simulation. This framework enables rapid high-performance RISs design, facilitating their large-scale applications in communication and radar systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Air Stability of Organic Thin-Film Transistors with Thiol-Functionalized Gold Bottom Source and Drain Contacts","authors":"Tobias Wollandt, Sabrina Steffens, Karla Cordero-Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk","doi":"10.1002/aelm.202500298","DOIUrl":"https://doi.org/10.1002/aelm.202500298","url":null,"abstract":"The contact resistance and the intrinsic channel mobility of p-channel and n-channel organic thin-film transistors (TFTs) based on four different vacuum-deposited small-molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact-semiconductor interface. Across all investigated parameters, DPh-DNTT is found to yield the most air-stable TFTs among the semiconductors investigated here.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compositionally Tunable 2D PtSexTey Alloys Synthesized via Thermally Assisted Conversion for Mid-Wave Infrared Photodetection","authors":"Dongki Shin, Yunjin Lee, Jiyoung Kim, Youngjo Choi, Woong Kim","doi":"10.1002/aelm.202500344","DOIUrl":"https://doi.org/10.1002/aelm.202500344","url":null,"abstract":"Mid-wave infrared (MWIR) photodetectors play a crucial role in thermal imaging, environmental monitoring, and medical diagnostics due to their ability to detect subtle thermal signatures. However, advancements in this field have been limited by the scarcity of suitable semiconductor materials and the high cost of epitaxial growth techniques. 2D materials have emerged as a promising new class of candidates for MWIR photodetectors, offering tunable optical properties and compatibility with scalable, cost-effective fabrication methods. While band gap tuning in the MWIR range has thus far been achieved through thickness modulation and defect engineering, compositional engineering remains largely unexplored. Here, broadband band gap tuning across the MWIR spectrum is demonstrated via compositional engineering in a 2D PtSe<i>_x</i>Te<i>_y</i> system synthesized through direct thermally assisted conversion. Optical characterization reveals a strong correlation between composition and band gap. As the Te content increases and the band gap narrows, a photodetector based on a p-type PtSe<i>_x</i>Te<i>_y</i>/n-type Si heterojunction exhibits significantly enhanced response to 800 °C blackbody radiation, indicating improved MWIR detection capability. These findings underscore the potential of compositional engineering as a straightforward and effective strategy for developing next-generation MWIR photodetectors for advanced optoelectronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"InGaZnO-Based Thin-Film Thermistors on PEEK Fabric for Green Smart Textiles","authors":"Albert Heinrich Lanthaler, Sahira Vasquez, Riccardo Zamboni, Michael Haller, Luisa Petti, Niko Münzenrieder, Giuseppe Cantarella","doi":"10.1002/aelm.202500146","DOIUrl":"https://doi.org/10.1002/aelm.202500146","url":null,"abstract":"Electronic textiles (e-textiles) have recently achieved outstanding results, allowing fast and reliable systems to be directly integrated into fabrics and threads. However, based on the environmental impact of these systems, the improvement of their limited End-of-Life (EoL) strategies is nowadays a major challenge. For this reason, the development of a circular technology for the realization of e-textiles, aiming at waste reduction and support of materials recycling, is highly required. Herein, an innovative and fully recyclable integration of thin-film electronics on a biocompatible polyether ether ketone (PEEK) fabric is presented. Specifically, three different configuration of InGaZnO-based thin-film thermistors are investigated, comparing their capabilities and sustainability. The devices are characterized over a temperature range from 25 to &lt;span data-altimg=\"/cms/asset/72bf4860-8c0f-4914-9c19-d6e11a9dda08/aelm70069-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"48\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm70069-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3,4\" data-semantic-content=\"5,6\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"60 Superscript ring Baseline normal upper C\" data-semantic-type=\"infixop\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"7\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-msup data-semantic-children=\"1,2\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"unknown\" data-semantic-type=\"superscript\"&gt;&lt;mjx-mspace data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\" style=\"width: 0.16em;\"&gt;&lt;/mjx-mspace&gt;&lt;mjx-script style=\"vertical-align: 0.363em;\"&gt;&lt;mjx-mo data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-script&gt;&lt;/mjx-msup&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"7\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;/mjx-mrow&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altim","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"323 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning","authors":"Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho","doi":"10.1002/aelm.202500361","DOIUrl":"https://doi.org/10.1002/aelm.202500361","url":null,"abstract":"Optoelectronic neuromorphic devices promise real‐time processing of unstructured biometric data, yet challenges remain in achieving material non‐toxicity and long‐term synaptic retention, along with a clear understanding of the underlying mechanisms. Here, an optical charge trap memory (CTM) is reported based on a graphene/ZnO nanoparticle (GZO) heterostructure that addresses these limitations through its large photoconductive gain and abundant charge trap sites. Distinct from previous nanoparticle/graphene photodetectors, the work leverages interfacial trap‐mediated processes to implement stable optoelectronic neuromorphic functionalities, including long‐term potentiation, retention, and efficient relearning. The GZO CTM exhibits robust charge trapping characteristics, with charge retention exceeding 54 h at the e<jats:sup>−1</jats:sup> loss point, attributed to interfacial trap states and a substantial energy barrier at the GZO interface. These trapped charges enable stable potentiation and efficient memory reprogramming, requiring significantly fewer pulses after partial memory loss. Furthermore, artificial neural network simulations based on GZO CTM characteristics demonstrate rapid convergence and near‐unity accuracy in handwriting recognition tasks within 20 training epochs, even under noise conditions. This study highlights the potential of trap‐engineered GZO heterostructures as scalable, energy‐efficient platforms for biocompatible neuromorphic computing, particularly in wearable systems requiring stable optical memory and real‐time signal processing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145072173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling","authors":"Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia","doi":"10.1002/aelm.202500373","DOIUrl":"https://doi.org/10.1002/aelm.202500373","url":null,"abstract":"Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐based compact model for analog filamentary Conductive‐Metal‐Oxide (CMO)/HfO<jats:sub>x</jats:sub> ReRAM, capable of reproducing switching characteristics over a broad range of operating conditions. Compared to the state‐of‐the‐art, the model extends the dynamic interplay between ion migration and electron hopping, while also accounting for parasitic resistive elements. Simulations of various voltage inputs are tested to reproduce quasi‐static <jats:italic>I–V</jats:italic> curves, SET switching kinetics under single‐pulse programming conditions, and analog accumulative conductance modulation upon bipolar identical pulse streams. Additional simulations reveal the physical criterion underlying the stabilization of the CMO/HfO<jats:sub>x</jats:sub>‐based ReRAM memory state around the equilibrium point, namely symmetry point, under pulsing conditions when a fading memory mechanism emerges. Building upon the evidence of such equilibrium stabilization under pulsing and quasi‐static conditions, a procedure is established to visualize and map equilibrium memory states across different input domains. The physical model supports design optimization of switching behavior for analog neuromorphic systems and non‐volatile memory architectures. It also enables accurate integrated circuit simulations with CMO/HfO<jats:sub>x</jats:sub>‐based ReRAM technology.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3","authors":"Matteo Fettizio, Can Onur Avci, Roberto Mantovan, Emanuele Longo","doi":"10.1002/aelm.202500280","DOIUrl":"https://doi.org/10.1002/aelm.202500280","url":null,"abstract":"Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques. Recent studies have validated the topological properties of <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub> thin films grown via metal–organic chemical vapor deposition on 4‐inch wafers. To advance <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>‐based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin‐orbit torque (SOT) and magnetoresistive responses in <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10<jats:sup>6</jats:sup> . These findings underscore the potential of the <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub> TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}