Advanced Electronic Materials最新文献_第5页

Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films 电化学掺杂用于P（NDI2OD-T2）薄膜的吸收和电导率调谐

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-15 DOI: 10.1002/aelm.202400956

David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs

{"title":"Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films","authors":"David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs","doi":"10.1002/aelm.202400956","DOIUrl":"https://doi.org/10.1002/aelm.202400956","url":null,"abstract":"Electrochemical doping of thin films of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) is shown as straightforward method to achieve different degrees of doping both during in situ electrochemical experiments as well as in the solid state. Results obtained from cyclic voltammetry and absorption spectroscopy upon reduction can be explained by the presence of the neutral state as well as polaron and bipolaron species, including neutral/polaron and polaron/bipolaron mixed valence states. The UV-vis-NIR spectra are analyzed and explained based on the calculated electronic structure and the corresponding transitions between different states, this includes features such as numbers and positions of the peaks and their evolution during reduction. Most intruingly, doped films are stable after transfer in the solid state, as evidenced by absorption spectroscopy. Conductivity measurements of films with different degrees of doping show a bell-shaped conductivity profile, which underlines the classification of P(NDI2OD-T2) as a conjugated redox polymer with mixed valence transport. Maximum conductivities of up to 2 × 10−4 S cm−1 are obtained at intermediate doping levels under the coexistence of neutral state and polarons. Conductivity measurements of blade-coated films point to anisotropic charge transport with the highest charge transport along the blade /polymer chain direction and an anisotropic conductivity ratio of 4.1.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

BiSbF2 Monolayer: A 2D Inversion-Asymmetric Topological Insulator With Linearly Tunable Giant Spin-Splitting and Bulk Gap 具有线性可调巨自旋分裂和体隙的二维逆不对称拓扑绝缘体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-14 DOI: 10.1002/aelm.202400996

Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu

{"title":"BiSbF2 Monolayer: A 2D Inversion-Asymmetric Topological Insulator With Linearly Tunable Giant Spin-Splitting and Bulk Gap","authors":"Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu","doi":"10.1002/aelm.202400996","DOIUrl":"https://doi.org/10.1002/aelm.202400996","url":null,"abstract":"Using first-principles calculations, an intriguing 2D topological insulator (TI), fluorinated β-BiSb monolayer (BiSbF2 ML) is identified, which not only harbors topologically protected gapless edge states, but also contains spin-split bulk states with opposite Berry curvature and spin moment in inequivalent valleys. Specifically, its topological edge states reside in a sizable bulk gap of up to 252 meV, sufficiently large for realizing room-temperature quantum spin Hall effect. For its bulk states, there exist giant spin-orbit induced spin-splittings in both the uppermost valence band (390 meV) and the lowermost conduction band (478 meV) due to the breaking of inversion symmetry. In particular, both of the spin-splitting and the bulk gap can be linearly tuned by external strains from −5% to 5% in a considerable energy window of about 100 meV. Moreover, the intrinsic electronic structure of BiSbF2 ML near the Fermi level can be well preserved in the substrate-supported BiSbF2 ML. The results establish a new 2D inversion asymmetric TI with distinguished bulk state, which provides an ideal platform for exploring the combined effects among spintronics, valleytronics, and topological physics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exotic Photothermal Response in Ti-Based MXene Optoelectronic Devices ti基MXene光电器件的奇异光热响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-14 DOI: 10.1002/aelm.202500017

Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi

{"title":"Exotic Photothermal Response in Ti-Based MXene Optoelectronic Devices","authors":"Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi","doi":"10.1002/aelm.202500017","DOIUrl":"https://doi.org/10.1002/aelm.202500017","url":null,"abstract":"MXenes represent one-of-a-kind materials to devise radically novel technologies and achieve breakthroughs in optoelectronics. To exploit their full potential, precise control over the influence of stoichiometry on optical and thermal properties, as well as device performance, must be achieved. Here, the characteristics of optoelectronic devices based on Ti3C2Tx and Ti2CTx thin films are uncovered, highlighting the striking difference in their photothermal responses to laser irradiation under different experimental conditions. Even though their absorption coefficients at 450 nm are comparable, the thermal excitation and relaxation phenomena display markedly different kinetics: Ti2CTx devices show a strong asymmetry during the heating-cooling cycle, with the heat dissipation kinetics being three orders of magnitude slower than Ti3C2Tx and strongly influenced by environmental conditions. The findings are expected to stimulate fundamental investigations into the photothermal response of MXenes and open exciting prospects for their use in printed and wearable optoelectronics, including memory devices and neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"299 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces 用于生物光子应用的共轭聚合物纳米粒子：生物杂交界面的制备、表征和模拟

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-10 DOI: 10.1002/aelm.202500073

Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca

{"title":"Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces","authors":"Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca","doi":"10.1002/aelm.202500073","DOIUrl":"https://doi.org/10.1002/aelm.202500073","url":null,"abstract":"Biophotonics has gained significant interest in recent years due to its potential in medical theranostic applications, with nano‐materials emerging as key enablers for advancing optical and electronic functionalities in biological environments. In this study, conjugated polymer nanoparticles (CP‐NPs), namely regio‐regular poly(3‐hexylthiophene) (P3HT), [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), and their blend (P3HT:PCBM), are exploited as nano‐materials for biophotonic applications. The CP‐NPs, obtained via a nanoprecipitation method, showed an average size of ca. 180 nm. Their optoelectrical properties indicate visible absorbance (350–600 nm) and red/near infra‐red (NIR, 650–900 nm) emission, demonstrating their suitability for biophotonic applications, in particular in biohybrid interfaces where effective light absorption and emission in biological environments are crucial. Interestingly, under light stimulation, the photocurrent response of the CP‐NPs in electrolyte solution (phosphate‐buffered saline, PBS) showed a stable and reproducible signal (current density ranging from 0.18 to 7 nA cm−2) thereby enhancing their potential for bio‐sensing/stimulation. Simulations of CP‐NPs interactions with biological fluids (i.e., PBS) under light stimulation showed distinct carrier generation and transport behaviors, with P3HT‐NPs exhibiting consistent charge generation (up to 3 × 1020 nA cm−3). These findings demonstrate that CP‐NPs are promising for biophotonic applications, such as photothermal therapy, due to their efficient charge transport, UV‐vis absorption, NIR emission, and controlled interactions with biological environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143813882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection 用于高灵敏度红外探测的自对准异质结栅极碳纳米管光电晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-09 DOI: 10.1002/aelm.202400966

Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang

{"title":"Self-Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection","authors":"Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang","doi":"10.1002/aelm.202400966","DOIUrl":"https://doi.org/10.1002/aelm.202400966","url":null,"abstract":"Heterojunction-gated (HG) phototransistors have shown exceptional performance in weak-light infrared detection due to their internal gain mechanism and the opto-electric decoupling design. However, huge room is remained on optimizing device structure to further improve the performance, integrated density and yield. In this work, a carbon nanotube (CNT) film-based phototransistor is fabricated with a self-aligned gate consisting of a zinc oxide (ZnO) film/PbS colloidal quantum dot heterojunction. This fabrication process involves a standard lift-off method to form an atomic-layer-deposited dielectric and a self-aligned sputtered ZnO film, which fully covers the CNT network channel to provide the maximum light absorption area. The resulting device demonstrates a high responsivity of 2.9 × 105 A W−1, a specific detectivity of 9.6 × 1013 Jones, and an ultraweak detectable intensity of 0.8 nW cm−2 at 1300 nm illumination, all at room temperature. The self-aligned HG phototransistor presents infrared photodetection performance comparable to non-self-aligned one, which typically require electron-beam lithography or high-precision lithography. This study can be insightful in developing high-performance, easily manufacturable CNT-based infrared detectors and high-resolution imaging applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"195 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution-Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating-Gates for High-Efficiency Ambipolar Charge Trapping Memory 溶液加工的立体受阻供体-受体小分子作为分子浮动门，用于高效安比极电荷捕获存储器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-09 DOI: 10.1002/aelm.202500095

Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling

{"title":"Solution-Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating-Gates for High-Efficiency Ambipolar Charge Trapping Memory","authors":"Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling","doi":"10.1002/aelm.202500095","DOIUrl":"https://doi.org/10.1002/aelm.202500095","url":null,"abstract":"The molecular floating-gate transistor memories are fabricated by a simple spinning-coating method using a small-molecule material spiro[fluorene-9,7′-dibenzo[c,h]acridine]-5′-one (SFDBAO) as the trapping element. The molecule with donor–acceptor (D–A) structures contains naphthylamine and quinone-like structures, which can serve as trapping sites for hole and electron integration. Combined with the steric hindrance effect of the molecule itself, the pentacene (PEN)-based transistor memory device with solution-processed SFDBAO shows excellent charge-trapping ability, including high hole trapping efficiency (3.43 × 1013 cm−2 V−1 s−1), fast programming speed (≈1 ms), and ambipolar memory behavior with a large memory window (74.3 V). The optimized device based on the SFDBAO@polystyrene (SFDBAO@PS = 5:1) film exhibits reliable endurance characteristic (>103 cycles) and good charge retention (>2 × 104 s). These results suggest that the high-performance ambipolar OFET memory can be achieved through a small-molecule material by rational molecular design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"99 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wearable Image-Based Colorimetric Sensor for Real-Time Gas Detection with High Chromaticity 用于高色度实时气体检测的可穿戴图像比色传感器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-09 DOI: 10.1002/aelm.202400977

Ji-Eun Yeo, Joo Hwan Ko, Seung Hyeon Lee, Young Min Song

{"title":"Wearable Image-Based Colorimetric Sensor for Real-Time Gas Detection with High Chromaticity","authors":"Ji-Eun Yeo, Joo Hwan Ko, Seung Hyeon Lee, Young Min Song","doi":"10.1002/aelm.202400977","DOIUrl":"https://doi.org/10.1002/aelm.202400977","url":null,"abstract":"Flexible gas sensing technologies are essential for a wide range of environments and applications, from wearable devices to large-scale industrial systems. Among various approaches, colorimetric sensing stands out for its distinct advantages, including energy-free operation, intuitive visual feedback, and high resistance to environmental disturbances. Leveraging ultrathin resonators, colorimetric sensing achieves enhanced chromaticity and angular stability. In this study, a flexible colorimetric gas sensor is introduced based on a resonator array integrated with polyvinyl alcohol (PVA). This sensor achieves nearly 100% coverage of the standard RGB color gamut, enabling precise and visually distinguishable gas detection. Fabricated on a flexible substrate, it demonstrates remarkable angular robustness, maintaining consistent color under incident light angle variations of up to 60°. This capability, combined with rapid response times of 180 ms for PVA swelling and 210 ms for shrinking, highlights the sensor's adaptability for diverse applications, including wearable devices and industrial-scale monitoring. Furthermore, the sensor is evaluated under various volatile organic compounds (VOCs) and imaging conditions, showcasing its potential for image-based analysis and accurate VOC detection. Notably, it demonstrated the ability to detect VOC concentrations that are indistinguishable using a single sensor by simultaneously analyzing data from four sensor arrays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Electron Beam Irradiation on Network Carbon Nanotube Films Based Field Effect Transistors 电子束辐照对基于碳纳米管薄膜的场效应晶体管的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-08 DOI: 10.1002/aelm.202500048

Xiaoxiao Guan, Boxiang Zhang, Yunong Xie, Chuanhong Jin

{"title":"Influence of Electron Beam Irradiation on Network Carbon Nanotube Films Based Field Effect Transistors","authors":"Xiaoxiao Guan, Boxiang Zhang, Yunong Xie, Chuanhong Jin","doi":"10.1002/aelm.202500048","DOIUrl":"https://doi.org/10.1002/aelm.202500048","url":null,"abstract":"Semiconducting single-walled carbon nanotube random network thin films (network CNTs) hold promising applications in nanoelectronic devices. However, exposure to electron beam irradiation during characterization and fabrication of network CNTs via tools like scanning electron microscope (SEM) and e-beam lithography (EBL) is often unavoidable and may degrade network CNT field effect transistors (FETs). This study investigates the influences of SEM electron beam irradiation on network CNT FETs, focusing on dose, energy, and dose rate, with the on-state current (Ion) as the primary metric. At lower doses (≤7.2 × 1014 e cm−2), Ion exhibits a temporary reduction, while recovering mostly within 60 min in the ambient environment. At higher doses (>2.9 × 1015 e cm−2), Ion decreases significantly and persistently. The observed phenomena can be attributed to the charging of the SiO2 substrate and defect formation in the SiO2 substrate. The findings provide insights for optimizing electron beam-based techniques in the characterization of network CNT FETs and device fabrication.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flash-Thermal Reduction of Graphene Oxide with Flexible Electronics Platform for Highly Sensitive Wearable Temperature Sensor 高灵敏度可穿戴温度传感器柔性电子平台氧化石墨烯闪热还原

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-08 DOI: 10.1002/aelm.202400984

Yeong Jun Yun, Hyun Jin Kang, Chan Yun Bae, Gyu Heon Bae, Hyun Jin Lee, Ki Hoon Kim, Yeong Jun Jang, Tae Won Nam, Jung Woo Lee

{"title":"Flash-Thermal Reduction of Graphene Oxide with Flexible Electronics Platform for Highly Sensitive Wearable Temperature Sensor","authors":"Yeong Jun Yun, Hyun Jin Kang, Chan Yun Bae, Gyu Heon Bae, Hyun Jin Lee, Ki Hoon Kim, Yeong Jun Jang, Tae Won Nam, Jung Woo Lee","doi":"10.1002/aelm.202400984","DOIUrl":"https://doi.org/10.1002/aelm.202400984","url":null,"abstract":"Accurate and continuous temperature monitoring is essential for effective diagnosis and management of health conditions, particularly amid global challenges such as the COVID-19 pandemic and the rising prevalence of age-related diseases and cancer. However, conventional temperature-measuring devices suffer from inherent limitations, including rigidity, bulkiness, and insufficient sensitivity, making them unsuitable for long-term, real-time applications. To overcome these challenges, a highly sensitive and flexible temperature sensor utilizing partially reduced graphene oxide (PrGO) as the sensing material is developed. Graphene oxide (GO), characterized by disrupted sp2 bonds and oxygen-rich functional groups that act as electron traps, undergoes controlled reduction to modulate its electrical and structural properties. In this study, by employing the flash-thermal reduction technique, the reduction degree of the GO with systematic analyses on conductivity and material stability is precisely adjusted. The optimized flash-thermal reduced graphene oxide based sensor exhibits exceptional flexibility, reversibility, high sensitivity (≈1.28% °C−1), excellent linearity (R2 ≈ 0.999), long-term stability, and a rapid response time (≈0.6 s), outperforming conventional metal-based temperature sensors in sensitivity. These advancements highlight the transformative potential of flash-thermal reduction for next-generation wearable sensors, offering a lightweight, adaptable, and highly responsive platform for real-time medical monitoring and healthcare applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143806296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reversal of Spin-Torque Polarity with Inverting Current Vorticity in Composition-Graded Layer at the Ti/W Interface Ti/W界面成分梯度层中电流涡度反转的自旋-转矩极性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-08 DOI: 10.1002/aelm.202400797

Hayato Nakayama, Taisuke Horaguchi, Jun Uzuhashi, Cong He, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuto Yamanoi, Yukio Nozaki

引用次数: 0