Sign Competing Sources of Berry Curvature and Anomalous Hall Conductance Humps in Topological Ferromagnets

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wojciech Brzezicki, Carmine Autieri, Mario Cuoco
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Abstract

The use of Berry-phase concepts has established a strong link between the anomalous Hall effect (AHE) and the topological character of the Hall currents. However, the occurrence of sign competition in the Berry curvature often hinders the topological origin of the observed anomalous Hall effects. Here, a 2D topological ferromagnet is studied with coupled spin and orbital degrees of freedom to assess the anomalous Hall effects in the presence of sign-competing sources of Berry curvature. It is shown that itinerant topological ferromagnets can generally lead to topological metallic bands marked by a non-zero Chern number. It is found that the resulting Berry curvature exhibits a characteristic anisotropic profile with a non-monotonous angular dependence. The sign change of the intrinsic contribution to the anomalous Hall conductance can occur together with topological transitions or be driven by the population imbalance of the topological bands. The breaking of the inversion symmetry introduces the orbital Rashba coupling in the system. The interplay between the orbital Rashba and sign competing sources of Berry curvature leads to anomalies in the anomalous Hall conductance at values of magnetic fields for which the magnetization switches its orientation. The humps in topological ferromagnets arise when the anomalous Hall conductivity is small in absolute value and they can be detected only far from half-filling. This study can be relevant for the family of the topological 2D ferromagnets as well as Weyl ferromagnets, and can particularly account for the variety of unconventional behaviors observed in ultrathin films of SrRuO3.

Abstract Image

拓扑铁磁体中Berry曲率和异常霍尔电导峰的符号竞争源
贝里相位概念的使用已经建立了异常霍尔效应(AHE)和霍尔电流的拓扑特征之间的紧密联系。然而,Berry曲率中符号竞争的发生往往阻碍了观测到的异常霍尔效应的拓扑起源。本文研究了具有自旋和轨道耦合自由度的二维拓扑铁磁体,以评估在Berry曲率的符号竞争源存在下的异常霍尔效应。结果表明,流动的拓扑铁磁体通常可以形成以非零陈氏数为标志的拓扑金属带。结果表明,得到的贝里曲率具有非单调角依赖的各向异性特征。异常霍尔电导的本征贡献的符号变化可以与拓扑跃迁一起发生,也可以由拓扑带的人口不平衡驱动。逆对称的破坏在系统中引入了轨道Rashba耦合。Rashba轨道和Berry曲率的符号竞争源之间的相互作用导致在磁化方向改变的磁场值下异常霍尔电导的异常。当异常霍尔电导率绝对值很小时,拓扑铁磁体中的峰状结构就会出现,并且只有在距离半填充很远的地方才能探测到。这项研究可以与拓扑二维铁磁体家族以及Weyl铁磁体相关,并且可以特别解释SrRuO3超薄膜中观察到的各种非常规行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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