Advanced Electronic Materials最新文献

One‐Step Synthesis of Size‐Controlled Copper Oxide Nanoparticles on Laser‐Induced Graphene Sensor for L‐Cysteine Detection

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70562

Gustavo Miguel Sousa, Ketley Caroline Rocha Pereira, Deissy Johanna Feria Garnica, Marcos Rocha Diniz da Silva, Matheus Santos Dias, Camila Marchetti Maroneze, Cecilia de Carvalho Castro Silva

{"title":"One‐Step Synthesis of Size‐Controlled Copper Oxide Nanoparticles on Laser‐Induced Graphene Sensor for L‐Cysteine Detection","authors":"Gustavo Miguel Sousa, Ketley Caroline Rocha Pereira, Deissy Johanna Feria Garnica, Marcos Rocha Diniz da Silva, Matheus Santos Dias, Camila Marchetti Maroneze, Cecilia de Carvalho Castro Silva","doi":"10.1002/aelm.70562","DOIUrl":"https://doi.org/10.1002/aelm.70562","url":null,"abstract":"Laser‐induced graphene (LIG) has emerged as a sustainable platform for electrochemical sensing due to its low‐cost, chemical‐free, and scalable fabrication. However, integrating metal or metal oxide nanoparticles into LIG remains challenging, as traditional doping strategies are constrained by complex pretreatment procedures and poor metal cation–graphene interfacial interactions, limiting performance. Therefore, simple and efficient strategies for metal‐doped LIG are highly desirable. Herein, we report a single‐step, in situ approach for synthesizing CuO‐decorated LIG using polyimide (PI) as precursor, targeting electrochemical detection of L‐cysteine (L‐Cys). Oxygen plasma pretreatment enhances PI surface hydrophilicity and promotes precursor anchoring, enabling improved nanoparticle dispersion. Subsequent laser irradiation simultaneously induces LIG formation and CuO nanoparticle synthesis. Importantly, this strategy enables control of nanoparticle size by tuning precursor concentration, yielding average diameters of ≈53 nm (50 m m ) and ≈194 nm (100 m m ), a feature rarely explored in LIG systems. Structural and compositional analyses confirm CuO incorporation into the LIG matrix while preserving high conductivity (≈20 Ω sq − 1 ). As a proof of concept, CuO–LIG electrodes exhibit enhanced electrochemical performance for L‐Cys detection, reducing oxidation overpotential to 350 mV vs Ag/AgCl (3 m KCl), achieving a limit of detection of 8.89 µ m and fast response time, only 0.23 ± 0.06 s, demonstrating a simple and effective route for LIG‐based sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"376 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70550

Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim

{"title":"Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration","authors":"Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim","doi":"10.1002/aelm.70550","DOIUrl":"https://doi.org/10.1002/aelm.70550","url":null,"abstract":"The rapid growth of bio‐integrated electronics, ranging from epidermal wearables to deep‐tissue implants, has created an urgent need for energy‐autonomous systems capable of operating without external power. While conventional silicon‐based devices suffer from poor mechanical compliance and low energy efficiency at biological interfaces, organic electrochemical transistors (OECTs) offer a compelling alternative by combining biocompatibility, low‐voltage operation, and intrinsic signal amplification. This review examines the integration of OECTs with energy harvesting technologies, with a particular focus on self‐powered biosensing. We first outline the fundamental operating principles, highlighting how volumetric capacitance and mixed ionic‐electronic conduction enable high transconductance at low voltages, making OECTs well suited for amplifying weak physiological signals. We then review recent advances in materials and device architectures, emphasizing how organic mixed ionic‐electronic conductors govern energy efficiency and operational stability. The electrolyte plays an active role by regulating ion transport and interfacial capacitance, thereby critically influencing device performance under energy‐autonomous conditions. The core discussion focuses on system‐level integration, where OECTs interface with mechanical (triboelectric and piezoelectric), thermal, and optical energy harvesters. Key challenges, including impedance matching and rectification, are analyzed to optimize sensing performance under harvested energy inputs. Finally, we outline future directions toward fully integrated, battery‐free bioelectronic platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"103 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.202500821

M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro

{"title":"Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing","authors":"M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro","doi":"10.1002/aelm.202500821","DOIUrl":"https://doi.org/10.1002/aelm.202500821","url":null,"abstract":"Controlling electrostatic potential landscapes at the mesoscale is essential for the advancement of adaptive electronic systems. In edge‐gated electrostatic geometries based on ferroionic Li 2.99 B a0.005 OCl films, directional spillover fields and polaron pinning effects generate structured, air‐side electrostatic gradients across centimeter‐scale gaps. A combination of piezoresponse force microscopy (PFM), micrometer‐resolution scanning Kelvin probe (µm‐SKP) analysis, electrochemical impedance spectroscopy (EIS), and temperature‐dependent transport measurements, supported by numerical solutions of the Poisson–Nernst–Planck (PNP) equations, shows dynamic coupling between surface polarization and mobile charge carriers. Apparent surface mobilities in the range of 300–500 cm 2 V −1 s −1 are observed under non‐equilibrium polarization conditions, accompanied by negative static resistance (NSR) and field‐induced carrier asymmetry. These results point to topologically guided conduction paths constrained by interface geometry and electrostatic boundary conditions. Such phenomena enable programmable capacitance zoning and field shaping, with implications for the design of solid‐state transistors and batteries, neuromorphic elements, energy harvesters, and high‐sensitivity sensing platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiO x Memristors

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70568

Biswajit Jana, Indranil Goswami, Ajoy Dinda, Ayan Roy Chaudhuri

{"title":"Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiO x Memristors","authors":"Biswajit Jana, Indranil Goswami, Ajoy Dinda, Ayan Roy Chaudhuri","doi":"10.1002/aelm.70568","DOIUrl":"https://doi.org/10.1002/aelm.70568","url":null,"abstract":"Achieving uniform resistive switching in silicon oxide (SiO x )‐based memristors remains a central challenge due to stochastic electroforming and uncontrolled defect redistribution. Programming the defect landscape through interfacial thermodynamics offers a potential route to suppress this variability. Here we demonstrate a thermodynamic interface‐redox strategy that intrinsically preconditions SiO x memristors and enables forming‐free switching. Deposition of scandium onto SiO x induces a spontaneous interfacial oxidation reaction, forming a stable scandium oxide layer while simultaneously reducing the adjacent SiO x region. This deposition‐driven redox process establishes an equilibrium oxygen‐vacancy reservoir at the interface, effectively defining the defect landscape prior to electrical biasing. The chemically stabilized interfacial layer acts as a predefined nucleation site for conductive filament formation, enabling intrinsic bipolar resistive switching in Sc/SiO x /W devices. The resulting memristors exhibit narrow resistance distributions, endurance exceeding 2 × 10 4 cycles, and retention beyond 10 6 s at 85°C. Unlike conventional oxygen‐scavenging electrodes that rely on dynamic oxygen exchange under high electric fields, the Sc/SiO x interface provides a stable defect reservoir that shifts device operation from stochastic defect generation to controlled vacancy percolation, thereby significantly improving switching uniformity. This interface‐defined defect programming strategy provides a pathway toward reliable SiO x memristors for practical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70569

Sehwan Park, Minseok Kim, Giheon Kim, Seungjun Lee, Haeyun Lee, Namsun Chou, Hyogeun Shin

{"title":"Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes","authors":"Sehwan Park, Minseok Kim, Giheon Kim, Seungjun Lee, Haeyun Lee, Namsun Chou, Hyogeun Shin","doi":"10.1002/aelm.70569","DOIUrl":"https://doi.org/10.1002/aelm.70569","url":null,"abstract":"Neural probes are essential electrophysiological tools for investigating brain function. Gold (Au) has traditionally been used as the standard signal‐line material due to its high electrical conductivity and excellent biocompatibility. However, global factors, including the COVID‐19 pandemic and associated supply‐chain instabilities, have driven a sharp rise in Au prices over the past decade, substantially increasing the cost of neural probe fabrication. Here, we introduce a neural probe that replaces Au with aluminum (Al), a widely available, low‐cost metal with high electrical conductivity and extensive use in semiconductor manufacturing. To ensure stable electrical performance despite Al's intrinsic susceptibility to oxidation, we developed a Ti/Al/Ni multilayer metal stack engineered to enhance interfacial adhesion, suppress spontaneous oxide formation, and mitigate electrochemical reactivity in electrolyte environments. Using this optimized architecture, the total fabrication cost of a Ti/Al/Ni multilayer neural probe was approximately USD 217—roughly one‐quarter the cost of a probe fabricated with Au under identical process conditions. The resulting probes exhibited robust electrical and chemical stability across multiple evaluations, and in vivo recordings demonstrated neural signal quality comparable to that of conventional Ti/Au neural probes. This approach can expand accessibility to high‐quality neural recording technologies, particularly in resource‐limited research settings.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Amorphous, Highly Conductive Pr 0.7 Ca 0.3 MnO 3 for Area‐Dependent Resistive Switching AlO x Bilayer Devices 非晶，高导电性Pr 0.7 Ca 0.3 mno3，用于面积相关电阻开关双层器件

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.202500556

Max Buczek,Iliyas T. Dossayev,Clemens Wittberg,Yen‐Po Liu,Kalle Goß,David N. Mueller,Zoe Moos,Zhenhao Liu,Karsten Bittkau,Mohammad Hassan Sultani,Stephan Menzel,Susanne Hoffmann‐Eifert,Regina Dittmann

{"title":"Amorphous, Highly Conductive Pr\u0000 0.7\u0000 Ca\u0000 0.3\u0000 MnO\u0000 3\u0000 for Area‐Dependent Resistive Switching AlO\u0000 \u0000 x\u0000 \u0000 Bilayer Devices","authors":"Max Buczek,Iliyas T. Dossayev,Clemens Wittberg,Yen‐Po Liu,Kalle Goß,David N. Mueller,Zoe Moos,Zhenhao Liu,Karsten Bittkau,Mohammad Hassan Sultani,Stephan Menzel,Susanne Hoffmann‐Eifert,Regina Dittmann","doi":"10.1002/aelm.202500556","DOIUrl":"https://doi.org/10.1002/aelm.202500556","url":null,"abstract":"ABSTRACT Memristive Pr 0.7 Ca 0.3 MnO 3 (PCMO) heterostructures exhibit area‐dependent resistive switching via a valence change mechanism, making them promising for neuromorphic architectures. A major challenge in PCMO‐based memory is higher‐dimensional lattice defects that affect oxygen‐vacancy migration and concentration. This study mitigates these defects using highly conductive amorphous PCMO fabricated via a CMOS back‐end‐of‐line‐compatible process and compares it with low‐conductive amorphous and polycrystalline PCMO. The resistance differences are attributed to changes in electronic mobility, based on the analysis of short‐ and long‐range order, Mn–O hybridization, and Mn valence state. AlO x /qa‐PCMO devices showed the highest ON/OFF ratio compared to low‐conductive amorphous and polycrystalline PCMO, because the field‐accelerated oxygen vacancy movement switches the mechanism from Poole–Frenkel emission in the LRS to trap‐assisted tunneling in the HRS. The mechanism change was identified by systematically analyzing the I–V asymmetry, device band diagrams for different PCMO types, and shape changes in the I–V curve fits. The band diagrams were calculated from the measured bandgaps and work functions of the different PCMO types. Analysis of the electric field distribution in the devices showed a clear correlation between the pre‐switching field strength in AlO x and the resulting ON/OFF ratio.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces 可编程元表面中全波验证实时波束形成的物理信息生成代理学习

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70480

Wenqian Liu,Weidong Chen,Chang Chen,Xiang Zhang,Sensong An

引用次数: 0

Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents 喷墨印刷的h - BN记忆电阻器在低电流下具有创纪录的耐久性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70557

Pere Aran Vilà,Giovanni Vescio,Juan Castillo,Francisco Palacio,Blas Garrido,Sergi Hernández,Albert Cirera

{"title":"Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents","authors":"Pere Aran Vilà,Giovanni Vescio,Juan Castillo,Francisco Palacio,Blas Garrido,Sergi Hernández,Albert Cirera","doi":"10.1002/aelm.70557","DOIUrl":"https://doi.org/10.1002/aelm.70557","url":null,"abstract":"ABSTRACT Memristors exhibiting both volatile and non‐volatile resistive switching (RS) behaviors hold significant potential for their utilization as artificial neurons and synapses in neuromorphic computing systems, respectively. Inkjet printing presents an economical, low‐material‐waste, and compatible process for the fabrication of solution‐based memristors, which are essential for flexible, wearable and biocompatible applications. However, inkjet‐printed memristors typically exhibit low endurance (below 10 4 cycles) and high switching currents (above 100 µA), both of which represent critical limitations for the practical implementation and low‐power operation of neuromorphic computing systems. In this work, a hexagonal boron nitride (h‐BN) based memristor formulated via liquid phase exfoliation (LPE) and fabricated with inkjet printing demonstrates exceptional electrical performance with a remarkable endurance of 2.2 million cycles at very low currents (below 1 µA) in a volatile regime under a current‐driven approach. This result surpasses the highest endurance reported to date on inkjet‐printed‐based memristors, surpassing the threshold of one million cycles. At higher currents (above 10 µA), the same devices exhibit stable non‐volatile RS with an endurance of 70 000 cycles. This study not only demonstrates the remarkable performance of the designed memristors, but also opens new avenues for current‐driven memristive electrical characterization and neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Backbone Engineering of Benzodifurandione‐Based n ‐Type OMIECs With Antiambipolar Behavior 具有反双极性行为的苯二呋喃二酮类n型OMIECs骨架工程

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70567

Dilara Gunturkun,Dilara Meli,Meike Kuhn,Eva M. Herzig,Jonathan Rivnay,Christian B. Nielsen

{"title":"Backbone Engineering of Benzodifurandione‐Based\u0000 n\u0000 ‐Type OMIECs With Antiambipolar Behavior","authors":"Dilara Gunturkun,Dilara Meli,Meike Kuhn,Eva M. Herzig,Jonathan Rivnay,Christian B. Nielsen","doi":"10.1002/aelm.70567","DOIUrl":"https://doi.org/10.1002/aelm.70567","url":null,"abstract":"ABSTRACT Organic mixed ionic‐electronic conductors (OMIECs) are key components for the next‐generation bioelectronics, albeit with n ‐type materials remaining significantly underrepresented compared to their p ‐type counterparts. Furthermore, reaching low operating voltages alongside high ambient and operational stability remains challenging when employing n ‐type OMIECs in organic electrochemical transistor (OECT)‐based applications. Herein, we report two novel n ‐type polymeric OMIECs, based on an azaisatin and benzodifurandione‐based backbone, incorporating either non‐fluorinated or fluorinated bithiophene donor units. The resulting polymers, obtained via Aldol polymerization, have high electron affinities of 4.5–4.7 eV. Both polymers function in n ‐type accumulation mode OECTs with indications of tunable antiambipolar behavior. The fluorinated polymer displays a low threshold voltage of 0.14 V, while the non‐fluorinated analogue offers excellent operational stability, with the OECT retaining 96% of its initial current after 1800 s of cycling.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance and Environmental Impact of Flexible Temperature Sensors on Cellulose‐Based Substrate 纤维素基基柔性温度传感器的性能和环境影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70548

Dianne C. Corsino,Diego Ferri,Claudio Bonizzoni,Marco Affronte,Shuvaraj Ghosh,Stefania Benedetti,Alberto Rota,Antonio Ballestrazzi,Luca Pasquali,Ahmed Rasheed,Luisa Petti,Hafiza Faiqa Maqsood,Niko Münzenrieder,Roberto Rosa,Giuseppe Cantarella

{"title":"Performance and Environmental Impact of Flexible Temperature Sensors on Cellulose‐Based Substrate","authors":"Dianne C. Corsino,Diego Ferri,Claudio Bonizzoni,Marco Affronte,Shuvaraj Ghosh,Stefania Benedetti,Alberto Rota,Antonio Ballestrazzi,Luca Pasquali,Ahmed Rasheed,Luisa Petti,Hafiza Faiqa Maqsood,Niko Münzenrieder,Roberto Rosa,Giuseppe Cantarella","doi":"10.1002/aelm.70548","DOIUrl":"https://doi.org/10.1002/aelm.70548","url":null,"abstract":"ABSTRACT To tackle the alarming generation of electronic waste, sustainable strategies must not be presented blindly without quantitatively assessing their environmental impacts. Here, a nature‐based flexible substrate called Triacetyl Cellulose (TAC) is analyzed as an eco‐friendly alternative to the widely‐used polyimide, not only by demonstrating functional thin‐film sensors but also through substrate recovery and reusability, and evaluation of associated environmental benefits through a life cycle assessment (LCA). Resistance temperature detectors (RTDs) and thermistors are realized on the TAC substrate using Cu, Mo, and AZO contacts, and InGaZnO. The temperature response of Cu‐ and Mo‐based RTDs show negligible hysteresis over multiple thermal cycles, while the AZO‐based RTD and the thermistors show consistent resistance drift. The sensors' mechanical performance is evaluated by bending measurements involving radii down to . We further show TAC recovery by Mo RTD dissolution in deionized water and TAC reusability by another sensor fabrication. Finally, LCA is employed to reliably compare the potential environmental implications of utilizing TAC in comparison with polyimide. Key results show that sensor fabrication on TAC demonstrates lower relative impacts than polyimide in all impact categories, including resource use and climate change, making it a more sustainable substrate choice for the fabrication of thin‐film temperature sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0