Advanced Electronic Materials最新文献

{"title":"Shaping Magnetic Liquid Metals Into 3D Leakage‐Free, Shape‐Programmable Structures and Electronics","authors":"Yongyu Lu, Zizheng Wang, Vagif Abdulla, Jacob Pfund, Shao‐Hao Lu, Yi Li, Xincheng Zhang, Gavin Fennell, Yuxuan Zhang, Menka Jain, Yi Zhang, Xueju Wang","doi":"10.1002/aelm.202500166","DOIUrl":"https://doi.org/10.1002/aelm.202500166","url":null,"abstract":"Liquid metals (LMs), renowned for their high conductivity and large deformability, find increasing applications including in flexible electronics and soft robotics. One critical process in these applications is the precise patterning of LMs into desired shapes. Yet, existing LM patterning techniques predominantly focus on 2D patterns due to challenges posed by the inherent fluidity and leakage of LMs. Here, we introduce an approach that bypasses these limitations, enabling the creation of complex 3D leakage‐free LM structures. This is achieved through mechanical programming of 2D magnetically immobilized LM paste formed via incorporating magnetic particles into LMs. Such composite effectively resists leakage due to the combined effect of strong magnetic inter‐attraction within the porous magnetic networks and the high surface tension of LMs, while retaining the high conductivity. Diverse freestanding magnetic LM structures, obtained upon LM solidification at ambient temperature, dynamically morph between their 2D and various 3D configurations through multiple cycles of induction heating and magnetic‐assisted reprogramming, featuring large compression resistance and self‐healing capabilities. Potential applications of these leakage‐resistant, shape‐adaptable structures are demonstrated through a helical magnetic LM antenna, which showcases its efficiency in wireless communication and energy harvesting.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144701434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of the AlGaO Spacer Layer on the Performance of β‐Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors","authors":"Sheng‐Ti Chung, Catherine Langpoklakpam, Yicong Dong, Yi‐Kai Hsiao, Shaloo Rakheja, Hao‐Chung Kuo, Dong‐Sing Wuu, Kenneth Järrendahl, Ching‐Lien Hsiao, Edmund Dobročka, Milan Ťapajna, Filip Gucmann, Ray‐Hua Horng","doi":"10.1002/aelm.202500291","DOIUrl":"https://doi.org/10.1002/aelm.202500291","url":null,"abstract":"This study utilizes a metalorganic chemical vapor deposition system to grow a β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> epitaxial layer on a sapphire substrate and fabricate lateral β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). To enhance the performance of the β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> MOSFET, a (Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> spacer layer is introduced, with its aluminum (Al) composition modulated through energy band engineering. Three epitaxial samples are designed: a reference sample (without a spacer layer) and samples with (Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layers containing different Al compositions, specifically (Al<jats:sub>0.14</jats:sub>Ga<jats:sub>0.86</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and (Al<jats:sub>0.21</jats:sub>Ga<jats:sub>0.79</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. The influence of the Al composition in the (Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer on the two dimensional electron gas (2DEG) is investigated. The results show that a lower Al composition increases the carrier concentration in the 2DEG, boosting the saturation current (I<jats:sub>D,sat</jats:sub>) from 2.94 to 7.88 mA mm<jats:sup>−1</jats:sup>—a significant 168% improvement in the (Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> stacked epitaxy structure. For the high‐Al‐composition barrier layer ((Al<jats:sub>0.21</jats:sub>Ga<jats:sub>0.79</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>), the higher energy barrier slightly reduces the turn‐on current but effectively increases the breakdown voltage, from 210 to 576 V—an improvement of 188%. These improvements result from the higher energy barrier of the β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/(Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> interface, which reduced the leakage current density. By optimizing the Al composition in (Al<jats:sub>x</jats:sub>Ga<jats:sub>1‐x</jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, transistors suitable for either high performance or high breakdown voltage are successfully produced.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene Aerogel Pressure Sensor Improved by Introducing Intermolecular Forces for Human Motion Detection and Voice Recognition","authors":"Anqi Zhou, Wenchang Yi, Yingjun Wu, Ziyi Wu, Yawei Fu, Tang Liu, Huimin Li, Naizheng Bian, Song Liu","doi":"10.1002/aelm.202500262","DOIUrl":"https://doi.org/10.1002/aelm.202500262","url":null,"abstract":"MXene aerogels, known for their exceptional conductivity, hold significant potential in the development of pressure sensors. However, the van der Waals forces that solely exist between pure MXene nanosheets are inadequate for forming aerogels with high elasticity and mechanical properties, thus restricting the broad application of MXene aerogels in sensor technology. In this research, reduced graphene oxide (RGO) is utilized as the primary framework and incorporate polyaniline (PANI) to enhance intermolecular interaction forces, employing freeze‐drying techniques to fabricate 3D porous‐structured MXene aerogels. This approach significantly enhances the elasticity and electrical responsiveness of the aerogel. The resulting aerogel‐based pressure sensor exhibits high sensitivity (4 kPa<jats:sup>−1</jats:sup>), a wide linear response range (1–20 kPa), rapid response/recovery time (300/100 ms), and excellent stability. The sensor is capable of detecting a variety of pressure signals, from gentle breezes to human motion, and is applied in voice recognition. Using a machine learning framework based on feature engineering, it is possible to accurately identify and classify distinctly pronounced letters from sensor outputs with an accuracy rate as high as 98%. In summary, the high‐performance flexible pressure sensor based on MXene aerogel shows great potential for applications in health monitoring, smart wearable devices, and artificial intelligence.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios","authors":"Sehyeon Choi, Yunseo Lim, Sejin Kim, San Park, Boncheol Ku, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, Changhwan Choi","doi":"10.1002/aelm.202400960","DOIUrl":"https://doi.org/10.1002/aelm.202400960","url":null,"abstract":"As the number of word‐line layers of vertical flash memory increases, it is difficult to develop high aspect ratio contact further. NAND cell scaling can consistently reduce with advanced fabrication development, but the reliability deterioration becomes challenge as the cell‐to‐cell distance decreases. In this study, the hydrogen profile in the SiO<jats:sub>2</jats:sub>/SiN<jats:sub>x</jats:sub>/SiO<jats:sub>2</jats:sub> (ONO) stack is controlled through post annealing treatment and forming accessible deep level traps. When ONO stack employing with SiN<jats:sub>x</jats:sub>(x:1.02) is N<jats:sub>2</jats:sub>‐annealed, Si─Si and Si‐dangling bonds are observed. The polaron effect stemming from the Si─Si bonds led to a reduction in charge loss, thereby maintaining 84% of the memory window (MW). Conversely, when ONO stack employing SiN<jats:sub>x</jats:sub>(x:1.24) is annealed under forming gas ambient, the MW is increased from 4.68 to 6.57 V. This is attributed to the passivation of interface trap by dissociating N─H bonds and alleviating charge retention by reduction in the density of Si‐dangling bond, leading to maintaining 89.7% of MW. These results address the reliability issue caused by trapped‐charge instability and successfully mitigate the trade‐off relation between MW and retention characteristics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"94 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ReRAM/CMOS Array Integration and Characterization via Design of Experiments","authors":"Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam","doi":"10.1002/aelm.202500203","DOIUrl":"https://doi.org/10.1002/aelm.202500203","url":null,"abstract":"No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance. However, in an array each device needs to be measured in similar operating settings. Therefore, it is necessary to find the optimal settings where most devices will have the best performance across the entire array population. Traditional sampling methods require a large number of tests within an experimental space, which is time‐intensive and resource‐draining. As an alternative, this study proposes the adoption of the Latin square method under the Design of Experiments (DoE) framework for the characterization and performance optimization of arrays of ReRAM devices. This innovative approach drastically reduces the number of experimental tests, thereby offering a faster way to discern the impact of each factor and fine‐tune device parameters effectively. The core objective of employing this DoE technique is to harness its potential for optimizing parameters that significantly enhance the ON/OFF ratio and endurance of ReRAM devices. The optimization technique, performed on a CMOS‐integrated 20 k array of ReRAM devices, increases the device yield by ≈84%, compared to the previous integration with an unoptimized technique.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"7‐Methylquinolinium Iodobismuthate Memristor: Exploring Plasticity and Memristive Properties for Digit Classification in Physical Reservoir Computing","authors":"Gisya Abdi, Ahmet Karacali, Alif Syafiq Kamarol Zaman, Marlena Gryl, Andrzej Sławek, Aleksandra Szkudlarek, Hirofumi Tanaka, Konrad Szaciłowski","doi":"10.1002/aelm.202500049","DOIUrl":"https://doi.org/10.1002/aelm.202500049","url":null,"abstract":"This study explores 7‐methylquinolinium halobismuthates (I, Br, and Cl) with a focus on: (1) the impact of halide composition on their structural and semiconducting properties, and (2) their memristive behavior and plasticity for neuromorphic and reservoir computing. Crystallographic analysis reveals that halide substitution leads to the formation of low‐dimensional bismuth‐based frameworks. Optical bandgaps, measured via diffuse reflectance spectroscopy, correlate well with density functional theory calculations. Due to solubility constraints, only bismuth iodide complexes are integrated into electronic devices. Current–voltage measurements reveal pinched hysteresis loops, indicative of memristive behavior. Conductivity versus temperature analysis suggests both ionic and electronic conduction pathways. Given their ability to function as synaptic analogs, further tests on transient conductance (potentiation–depression) and spike‐time‐dependent plasticity are performed. The observed nonlinearity and fading memory characteristics highlight their potential for physical reservoir computing. To evaluate system‐level behavior, a device with 16 gold electrodes (1 input, 15 outputs) is fabricated on a silicon substrate coated with the target compound. The device is assessed through benchmark tasks including waveform generation, NARMA‐2, memory capacity, and noise response under DC/AC signals. Finally, the system demonstrates 82.26% accuracy in MNIST digit classification and 82% accuracy in spoken digit “2” recognition across six different speakers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in MXene‐Based Electronics via Surface and Structural Redesigning and Beyond","authors":"Adnan Younis, Edvin Idrisov, Saleh Thaker, Fathalla Hamed, El Hadi Sadki, Muhammad Zafar Iqbal, Tariq Mahmood, Babar Shabbir, Qiaoliang Bao","doi":"10.1002/aelm.202500321","DOIUrl":"https://doi.org/10.1002/aelm.202500321","url":null,"abstract":"MXenes, a prominent class of 2D materials, offer exceptional physicochemical properties, including tunable surface chemistry, high electrical conductivity, and structural versatility, making them ideal for advanced electronic, energy, and sensing applications. This review critically examines recent progress in the surface and structural engineering of MXenes, emphasizing their impact on tailoring electronic properties and enabling multifunctional device integration. Key surface modification strategies, such as termination group control, defect regulation, heteroatom doping, and oxidation tuning, are discussed in relation to their influence on the work function, conductivity, and chemical reactivity. Concurrently, structural engineering approaches, including interlayer manipulation, hierarchical assembly, and the formation of MXene‐based composites and heterostructures, are analyzed for their roles in enhancing charge transport, mechanical robustness, and device adaptability. This review highlights how these synergistic modifications drive performance enhancements in field‐effect transistors, photodetectors, and resistive memory devices. This work offers a cohesive framework for understanding and advancing MXene functionality by integrating insights across diverse engineering strategies. The findings aim to guide future research directions and stimulate innovation in next‐generation nanoelectronics based on MXenes and related 2D materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On Ga2O3 Self-Switching Nano-Diodes (Adv. Electron. Mater. 11/2025)","authors":"Glen Isaac Maciel García,&nbsp;Jorge Esteban Bolio,&nbsp;Vishal Khandelwal,&nbsp;Ganesh Mainali,&nbsp;Jose Taboada,&nbsp;Haicheng Cao,&nbsp;Biplab Sarkar,&nbsp;Xiaohang Li","doi":"10.1002/aelm.70036","DOIUrl":"https://doi.org/10.1002/aelm.70036","url":null,"abstract":"<p><b>Ga₂O₃ Self-Switching Nano-Diodes</b></p><p>This cover image illustrates a multichannel self-switching nano-diode, highlighting enhanced channel current flow under UV illumination. Additionally, increased relative permittivity in the trench regions also leads to higher current flow. More information can be found in article number 2500177 by Xiaohang Li and co-workers.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70036","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor","authors":"Lan Li, Ran Bi, Xiaomei Li, Zuoyuan Dong, Chao Yan, Shuying Wang, Pengpeng Ren, Ming Li, Xing Wu","doi":"10.1002/aelm.202400943","DOIUrl":"https://doi.org/10.1002/aelm.202400943","url":null,"abstract":"The gate‐all‐around field‐effect transistor (GAAFET) provides enhanced electrostatic control and improved current driving capabilities, positioning it as a promising candidate for fin field‐effect transistor (FinFET). However, the SiGe selective etching process‐induced strain affects the current transportation property along the channel, while the morphology and strain profiles at atomistic scale remain unclear. In this study, the anisotropic etching of the Si/SiGe stack and the selective isotropic etching of the SiGe process is carried out. It is discovered that uneven etching rates in lateral and vertical dimensions of the stack induce non‐uniform etching depth within the SiGe layer. High‐resolution high‐angle annular dark‐field (HAADF) imaging in scanning transmission electron microscopy (STEM) with strain analysis technique shows that the strain profile in the Si stack is inhomogeneous, and the bottom layer of the nanosheet suffers the highest strain. Technology computer‐aided design (TCAD) simulation results at the device level indicate that such inhomogeneous strain profiles reduce the drain current. The findings provide direct proof at the atomistic scale for high‐performance manufacturing of advanced GAAFET.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator","authors":"Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel","doi":"10.1002/aelm.202500175","DOIUrl":"https://doi.org/10.1002/aelm.202500175","url":null,"abstract":"Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m<jats:sup>−1</jats:sup> K<jats:sup>−1</jats:sup> and thermal boundary conductance (TBC) of 147 MW m<jats:sup>−2</jats:sup> K<jats:sup>−1</jats:sup>. Modified Williamson‐Hall (W‐H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross‐plane heat spreader in our AlN‐SOI platform.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}