Advanced Electronic Materials最新文献

筛选
英文 中文
Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects (Adv. Electron. Mater. 17/2025) 植物电子纳米材料的研究进展与展望[j]。板牙。17/2025)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70120
Ciro Allará, Giuseppe Ciccone, Manuela Ciocca, Sahira Vasquez, Pietro Ibba, Mauro Maver, Tanja Mimmo, Paolo Lugli, Luisa Petti
{"title":"Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects (Adv. Electron. Mater. 17/2025)","authors":"Ciro Allará,&nbsp;Giuseppe Ciccone,&nbsp;Manuela Ciocca,&nbsp;Sahira Vasquez,&nbsp;Pietro Ibba,&nbsp;Mauro Maver,&nbsp;Tanja Mimmo,&nbsp;Paolo Lugli,&nbsp;Luisa Petti","doi":"10.1002/aelm.70120","DOIUrl":"https://doi.org/10.1002/aelm.70120","url":null,"abstract":"<p><b>Electronic Nanomaterials</b></p><p>In their Review Article (10.1002/aelm.202500080), Ciro Allará, Giuseppe Ciccone, and co-workers review the potential of electronic nanomaterials to improve plant performance by enhancing photosynthesis, nutrient uptake, and stress tolerance. These materials offer sustainable and scalable strategies for boosting crop productivity in challenging environments, with opportunities for integration into advanced testing platforms (e.g., microfluidic systems). Created with BioRender.com.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70120","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inkjet Printable Semiconducting Inks for Enhancement-Mode Organic Electrochemical Transistors (Adv. Electron. Mater. 17/2025) 用于增强型有机电化学晶体管的可喷墨印刷半导体油墨。板牙。17/2025)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70122
Alan Eduardo Avila Ramirez, Shofarul Wustoni, Yizhou Zhong, Abdulelah Saleh, Prem D. Nayak, Jokubas Surgailis, Tania Cecilia Hidalgo Castillo, Sahika Inal
{"title":"Inkjet Printable Semiconducting Inks for Enhancement-Mode Organic Electrochemical Transistors (Adv. Electron. Mater. 17/2025)","authors":"Alan Eduardo Avila Ramirez,&nbsp;Shofarul Wustoni,&nbsp;Yizhou Zhong,&nbsp;Abdulelah Saleh,&nbsp;Prem D. Nayak,&nbsp;Jokubas Surgailis,&nbsp;Tania Cecilia Hidalgo Castillo,&nbsp;Sahika Inal","doi":"10.1002/aelm.70122","DOIUrl":"https://doi.org/10.1002/aelm.70122","url":null,"abstract":"<p><b>Inkjet Printed Enhancement-Mode OECTs</b></p><p>In their Research Article (10.1002/aelm.202500123), Sahika Inal and co-workers present inkjet-printable, molecularly dedoped PEDOT:PSS (p-type) and BBL (n-type) inks for enhancement-mode organic electrochemical transistors. These inks enable fully printed and hybrid device architectures on diverse substrates. High-performance NOT logic gate inverters and electrochemical sensors highlight the potential of scalable, low-cost, and stable organic electronics enabled by additive manufacturing with commercially available materials.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70122","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces (Adv. Electron. Mater. 17/2025) 用于生物光子应用的共轭聚合物纳米粒子:制备、表征和在生物杂化界面中的模拟(Adv.电子。板牙。17/2025)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70123
Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca
{"title":"Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces (Adv. Electron. Mater. 17/2025)","authors":"Ciro Allarà,&nbsp;Antonio Orlando,&nbsp;Giuseppe Ciccone,&nbsp;Soufiane Krik,&nbsp;Michele Pompilio,&nbsp;Andrea Pedrielli,&nbsp;Andrea Gaiardo,&nbsp;Paolo Lugli,&nbsp;Luisa Petti,&nbsp;Franco Cacialli,&nbsp;Manuela Ciocca","doi":"10.1002/aelm.70123","DOIUrl":"https://doi.org/10.1002/aelm.70123","url":null,"abstract":"<p><b>Conjugated Polymer Nanoparticles</b></p><p>The cover illustrates light-activated conjugated polymer nanoparticles (P3HT-, PCBM-, and P3HT:PCBM-NPs) interacting with a biological fluids environment. Upon visible light stimulation (420 nm and 520 nm), they generate photoelectrical signals (due to the generation and transport of charge carriers) to affect biological systems. The CP-NPs acting as biohybrid interfaces enable next-generation biophotonic and bioelectronic applications. Cover artwork by Daniela Moxedano. More information can be found in the Research Article by Manuela Ciocca and co-workers (10.1002/aelm.202500073).\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70123","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films (Adv. Electron. Mater. 17/2025) 电化学掺杂用于P(NDI2OD-T2)薄膜的吸收和电导率调谐。板牙。17/2025)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70124
David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs
{"title":"Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films (Adv. Electron. Mater. 17/2025)","authors":"David Neusser,&nbsp;Xiuming Sun,&nbsp;Sushri Soumya Jena,&nbsp;Wen Liang Tan,&nbsp;Lars Thomsen,&nbsp;Christopher R. McNeill,&nbsp;Sarbani Ghosh,&nbsp;Igor Zozoulenko,&nbsp;Sabine Ludwigs","doi":"10.1002/aelm.70124","DOIUrl":"https://doi.org/10.1002/aelm.70124","url":null,"abstract":"<p><b>Electrochemical Doping</b></p><p>In their Research Article (10.1002/aelm.202400956), Sabine Ludwigs and co-workers present electrochemical doping as a versatile tool to access the whole range of redox states upon reduction of the n-type polymer P(NDI2OD-T2). A smart coupling with UV-vis-NIR spectroscopy and conductivity measurements using 4-line gold electrodes allows for unprecedented insights into redox doping, both in electrolyte and in solid state, which is further corroborated by DFT calculations.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70124","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments? (Adv. Electron. Mater. 17/2025) PM6:Y6体异质结光活性膜在生物环境中是否具有细胞相容性和电稳定性?放置电子。板牙。17/2025)
IF 5.3 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70121
Mathias Polz, Konrad Binter, Kaila M. Yallum, Thomas Rath, Marta Nowakowska-Desplantes, Christa Schimpel, Gerhard Sommer, Nassim Ghaffari-Tabrizi-Wizsy, Natalie Banerji, Gregor Trimmel, Theresa Rienmüller
{"title":"Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments? (Adv. Electron. Mater. 17/2025)","authors":"Mathias Polz,&nbsp;Konrad Binter,&nbsp;Kaila M. Yallum,&nbsp;Thomas Rath,&nbsp;Marta Nowakowska-Desplantes,&nbsp;Christa Schimpel,&nbsp;Gerhard Sommer,&nbsp;Nassim Ghaffari-Tabrizi-Wizsy,&nbsp;Natalie Banerji,&nbsp;Gregor Trimmel,&nbsp;Theresa Rienmüller","doi":"10.1002/aelm.70121","DOIUrl":"https://doi.org/10.1002/aelm.70121","url":null,"abstract":"<p><b>Organic Photovoltaics</b></p><p>In their Research Article (10.1002/aelm.202400899), Theresa Rienmüller and co-workers explore the cytocompatibility and electrical stability of PM6:Y6 photoactive films in biological environments. The graphical abstract symbolizes optical excitation, leading to exciton formation and charge separation, and subsequent generation of an electric field in electrolytic solutions. Turquoise ions illustrate ionic movement, and red water molecules the film's interaction with the physiological environment.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 17","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70121","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vacuum Thermal Evaporation for OLEDs: Fundamentals, Optimization, and Implications for Perovskite LEDs 有机发光二极管的真空热蒸发:基本原理、优化和钙钛矿led的影响
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500555
Chenxi Shen, Ying Hu, Siqian Zhou, Ziquan He, Junchao Han, Daquan Zhang, Lei Lu, Xiaoliang Mo, Qianpeng Zhang
{"title":"Vacuum Thermal Evaporation for OLEDs: Fundamentals, Optimization, and Implications for Perovskite LEDs","authors":"Chenxi Shen, Ying Hu, Siqian Zhou, Ziquan He, Junchao Han, Daquan Zhang, Lei Lu, Xiaoliang Mo, Qianpeng Zhang","doi":"10.1002/aelm.202500555","DOIUrl":"https://doi.org/10.1002/aelm.202500555","url":null,"abstract":"Organic light‐emitting diodes (OLEDs) are central to high‐end displays and solid‐state lighting due to their small thickness and high flexibility, wide color gamut, and low power consumption. While solution processing offers simplicity and cost advantages for polymer‐based OLEDs, vacuum thermal evaporation (VTE) remains the dominant method for the commercial production of high‐performance small‐molecule OLEDs, owing to its precise control over film thickness, material purity, and multilayer integration. However, to meet the demands of display applications for higher performance, lower cost and more diverse forms (such as flexibility and high resolution), it is crucial to continuously optimize the VTE process. Meanwhile, although solution processing remains the predominant approach for perovskite light‐emitting diodes (PeLEDs), recent exploratory efforts have investigated VTE as an alternative route, thereby opening opportunities to transfer process insights from OLEDs to PeLEDs. This review aims to systematically summarize the application foundation and optimization strategies of VTE technology in OLEDs, and to explore how these mature practices can inform the process development and device design of vacuum‐evaporated PeLEDs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors 真空退火缺陷工程:高性能铟硒光电探测器的精确硒空位控制
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500436
Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao
{"title":"Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors","authors":"Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao","doi":"10.1002/aelm.202500436","DOIUrl":"https://doi.org/10.1002/aelm.202500436","url":null,"abstract":"Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in InSe is hindered by the complex interplay between defect evolution and phase transitions. In this work, a low‐temperature, high‐vacuum annealing strategy is introduced that allows for fine‐tuned regulation of selenium vacancies, enabling significant optoelectronic improvements while suppressing unwanted phase transitions. By performing measurements on InSe optoelectronic devices throughout the vacuum annealing process, it is demonstrated that vacuum annealing can serve as an n‐type doping, coupled with the enhancement of mobility (from 1.2 to 276 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>) and photoresponsivity (from 1000 to 2.3 × 10<jats:sup>4</jats:sup> A W<jats:sup>−1</jats:sup>). Through thermodynamic hypothesis and semi‐quantitative X‐ray photoelectron spectroscopy (XPS) results, a direct correlation is established between these performance improvements and the controlled increase of Se vacancy concentration (from ≈2% to ≈7%). Based on this, a band diagram model is proposed to explain the change of charge transport and photocurrent generation processes in InSe devices. This work establishes defect engineering as a critical standalone parameter for optimizing InSe device performance, offering both theoretical insights and practical guidelines for the fabrication of high‐performance InSe functional devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
46‐Channel Image Encryption Based on Optically Controlled Metasurfaces 基于光控超表面的46通道图像加密
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500533
Yufei Liu, Guibin Li, Zehao He, Xinke Wang, Yan Zhang
{"title":"46‐Channel Image Encryption Based on Optically Controlled Metasurfaces","authors":"Yufei Liu, Guibin Li, Zehao He, Xinke Wang, Yan Zhang","doi":"10.1002/aelm.202500533","DOIUrl":"https://doi.org/10.1002/aelm.202500533","url":null,"abstract":"With the rapid growth of data volumes in modern society, efficient and secure methods for information transmission, storage, and encryption have become essential. Benefiting from high‐density storage and fast access to 2D data, optical encryption shows significant promise for data protection. Metasurfaces, as a type of 2D artificial metamaterials capable of precisely controlling electromagnetic waves, have greatly advanced the development of multi‐channel optical encryption. However, many existing metasurface‐based optical encryption devices are limited by static operation and stringent requirements on materials or light sources. Here, a 46‐channel image encryption device is proposed, integrated with optically controlled metasurfaces to achieve dynamically tunable and high‐capacity optical encryption. An efficient binary amplitude‐phase inverse‐design method is developed that enables high performance optical encryption by incorporating binary amplitude distributions into an isotropic phase metasurface. This approach imposes minimal additional requirements on the light source or the metasurface. Experimental demonstrations using an infrared‐pump/terahertz‐probe imaging system confirm the effectiveness and robustness of the encryption device, highlighting its potential for advanced and flexible optical encryption applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors 高性能超宽带隙CaSnO3金属氧化物半导体场效应晶体管
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500459
Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, Gang Qiu
{"title":"High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors","authors":"Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, Gang Qiu","doi":"10.1002/aelm.202500459","DOIUrl":"https://doi.org/10.1002/aelm.202500459","url":null,"abstract":"The increasing demand for high‐voltage and high‐power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room‐temperature electron mobilities among all perovskite oxides. Among this family, Calcium stannate (CaSnO<jats:sub>3</jats:sub>) has the largest band gap of ≈4.7 eV, holding great promise for high‐power applications. However, the demonstration of CaSnO<jats:sub>3</jats:sub> power electronic devices is so far limited. In this work, high‐performance metal‐oxide‐semiconductor field‐effect transistor (MOSFET) devices based on lanthanum (La)‐doped CaSnO<jats:sub>3</jats:sub> are demonstrated for the first time. The MOSFETs exhibit an on/off ratio exceeding 10<jats:sup>8</jats:sup>, along with field‐effect mobility of 8.4 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> and on‐state current of 30 mA mm<jats:sup>−1</jats:sup>. The high performance of the CaSnO<jats:sub>3</jats:sub> MOSFET devices can be ascribed to the excellent metal‐to‐semiconductor contact resistance of 0.73 kΩ·µm. The devices also show great potential for harsh environment operations, as high‐temperature operations up to 400 K are demonstrated. An off‐state breakdown voltage of 1660 V is achieved, with a breakdown field of ∼8.3 MV cm<jats:sup>−1</jats:sup> among the highest reported for all UWB semiconductors. This work represents significant progress toward realizing the practical application of CaSnO<jats:sub>3</jats:sub> in future high‐voltage power electronic technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current Developments and Challenges in the Field of Biohybrid Neural Interfaces—A Scoping Review 生物杂化神经接口领域的现状与挑战——综述
IF 6.2 2区 材料科学
Advanced Electronic Materials Pub Date : 2025-10-15 DOI: 10.1002/aelm.202500259
Yi-Lin Yu, Jameel Muzaffar, Veronica Philips, Yun-Ju Yang, Damiano Giuseppe Barone, George G. Malliaras, Manohar Bance
{"title":"Current Developments and Challenges in the Field of Biohybrid Neural Interfaces—A Scoping Review","authors":"Yi-Lin Yu, Jameel Muzaffar, Veronica Philips, Yun-Ju Yang, Damiano Giuseppe Barone, George G. Malliaras, Manohar Bance","doi":"10.1002/aelm.202500259","DOIUrl":"https://doi.org/10.1002/aelm.202500259","url":null,"abstract":"Biohybrid neural interfaces (BNIs) will be pivotal for the future of advancing neuroprosthetics and neuromodulation technologies, though they have not yet been widely adopted into routine practice. This scoping review aims to consolidate recent advancements, identify ongoing challenges, and examine methodologies in biohybrid neural interfaces to highlight knowledge gaps and inform future research. Following the Preferred Reporting Items for Systematic Reviews and Meta-Analyses Extension for Scoping Reviews (PRISMA-ScR) framework, electronic literature searches of Medline/Embase, IEEE Xplore, Scopus, Web of Science, and the Cochrane Library, covering studies from 2000 onwards, focus on peer reviewed articles in English. A total of 25 articles are included in this scoping review, comprising 15 primary research studies, 7 review articles, and 3 related reports. These studies explore the integration of living cells, induced pluripotent stem cells (iPSCs), neurotrophic factors, hydrogels, and conductive polymers to enhance neural function and biocompatibility. Despite encouraging advances, challenges such as immune response, device durability, and signal fidelity remain critical barriers to clinical translation. Despite advancements, the field faces challenges that require further research. Future efforts should focus on refining bioactive coatings, advancing biohybrid designs, and developing next-generation neural recording systems to improve long-term integration and performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信