Advanced Electronic Materials最新文献

Multiferroicity in Calcium Manganate via Strain Engineering 应变工程研究锰酸钙的多铁性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-02 DOI: 10.1002/aelm.202500346

Ye Yuan, Zhen Yang, Cheng Ma, Kui‐juan Jin, Shuai Xu, Er‐jia Guo, Chen Ge, Can Wang, Xiulai Xu, Meng He, Guozhen Yang

{"title":"Multiferroicity in Calcium Manganate via Strain Engineering","authors":"Ye Yuan, Zhen Yang, Cheng Ma, Kui‐juan Jin, Shuai Xu, Er‐jia Guo, Chen Ge, Can Wang, Xiulai Xu, Meng He, Guozhen Yang","doi":"10.1002/aelm.202500346","DOIUrl":"https://doi.org/10.1002/aelm.202500346","url":null,"abstract":"Multiferroics have attracted intense interest due to their potential applications in multifunctional devices and high‐density storage for the next‐generation electronic technologies, owing to their multiple ferroic orders, especially ferroelectric and magnetic ones. However, the symmetry constraints imposed by magnetic point groups and the electronic configuration conflicts in d orbitals between ferroelectricity and magnetism hinder the coexistence of ferroelectric and magnetic orders, leading to a scarcity of multiferroics. In this work, multiferroicity is achieved in the non‐ferroelectric magnet Calcium Manganate (CaMnO3) through tensile‐strain engineering. The ferroelectricity with a Curie temperature up to 45 K is evidenced by the polarization‐electric field (P‐E) hysteresis loops, which also suggest that the spontaneous polarization aligns along [100] and [010] directions. Meanwhile, the magnetization below 125 K is confirmed by both the magnetization hysteresis loops and the temperature‐dependent magnetization measurements, providing compelling evidence for the multiferroic nature in the tensile‐strained CaMnO3 films. In addition, an abrupt increase in magnetization is found below 10K, indicating the establishment of a new ferromagnetic order due to the suppression of thermal fluctuations. These findings highlight strain engineering as a universal strategy to induce multiferroicity in non‐ferroelectric magnets.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145203087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer 基于新型等靛蓝基共轭聚合物的非氯化溶剂全溶液加工ofet

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-01 DOI: 10.1002/aelm.202500375

Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld

{"title":"All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer","authors":"Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202500375","DOIUrl":"https://doi.org/10.1002/aelm.202500375","url":null,"abstract":"Here, an Isoindigo (IID) comprised with Naphthodithiophene (NDT)‐based low band‐gap donor–acceptor copolymer semiconductor is designed, synthesized, and investigated. The newly reported polymer provides good solubility in a range of halogenated and non‐halogenated solvents due to the attachment of long branched alkyl chains on the Isoindigo core. After optimizing the performance of organic field effect transistors (OFETs) through the use of high‐boiling‐point chlorinated solvents, A similar approach is followed to realize transistors without the need of using halogenated solvents as a green approach. Well‐working transistors are shown with mobility values in a similar range as obtained for OFETs with films prepared from halogenated solvents, while significantly reducing the environmental impact. Finally, all‐solution‐processed, flexible OFETs are prepared without the use of halogenated solvents, which is an important step in the view of potential large area production of flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145203088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution‐Processed Bi2S3 Nanostructures for Flexible Memory and Neuromorphic Computing 溶液处理的Bi2S3纳米结构用于灵活记忆和神经形态计算

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-30 DOI: 10.1002/aelm.202500370

Sayali Shrishail Harke, Omesh Kapur, Peng Dai, Tongjun Zhang, Bingkai Ding, Bohao Ding, Ruomeng Huang, Chitra Gurnani

{"title":"Solution‐Processed Bi2S3 Nanostructures for Flexible Memory and Neuromorphic Computing","authors":"Sayali Shrishail Harke, Omesh Kapur, Peng Dai, Tongjun Zhang, Bingkai Ding, Bohao Ding, Ruomeng Huang, Chitra Gurnani","doi":"10.1002/aelm.202500370","DOIUrl":"https://doi.org/10.1002/aelm.202500370","url":null,"abstract":"The rapid advancement of wearable computing and edge AI technologies is driving the need for low‐temperature, flexible, and neuromorphic‐compatible electronic materials. In this work, the successful low‐temperature deposition of Bi2S3 thin films via an in situ solvothermal method using the single‐source precursor (SSP) [Bi(S2P(OC3H₇)2)3] is reported. This solution‐processed approach enables the formation of high‐quality, crystalline, and stoichiometric Bi2S3 films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi2S3‐based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long‐term synaptic plasticity, achieving high learning accuracy. These findings establish SSP‐derived Bi2S3 films as a promising material platform for next‐generation flexible neuromorphic computing and memory technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization 28Si聚焦离子束制备平面高富集硅及其实验优化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-29 DOI: 10.1002/aelm.202500233

Maddison Coke, Mason Adshead, Ravi Acharya, Kexue Li, Katie L. Moore, David N. Jamieson, Richard J. Curry

引用次数: 0

Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs 非平衡态氮峰退火晶化增强实现了高迁移率和高可靠性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-29 DOI: 10.1002/aelm.202500399

Kuo Zhang, Jiayi Wang, Ziheng Bai, Chunyu Zhang, Tong Yu, Yang Xu, Nannan You, Rui Chen, Zhicheng Wu, Di Geng, Guanhua Yang, Shengkai Wang, Ling Li, Ming Liu

{"title":"Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs","authors":"Kuo Zhang, Jiayi Wang, Ziheng Bai, Chunyu Zhang, Tong Yu, Yang Xu, Nannan You, Rui Chen, Zhicheng Wu, Di Geng, Guanhua Yang, Shengkai Wang, Ling Li, Ming Liu","doi":"10.1002/aelm.202500399","DOIUrl":"https://doi.org/10.1002/aelm.202500399","url":null,"abstract":"Poly-crystallized In-Ga-O (IGO) semiconductor has the potential for application in high-density memory and back end of line (BEOL) integration with CPU. Since the development of In2O3-based multi-cation oxides, i.e., IGZO, such material is very difficult to be poly-crystallized under the limitation of BEOL temperature. Here, a novel Nitrogen-Spike Annealing (NSA) method is demonstrated, this nonequilibrium annealing process utilizes a transient high temperature to induce crystallization while reducing the overall thermal budget. During NSA, the O atoms are more intended to bond with Ga, resulting in a more rigid framework that stabilizes the O atoms. The crystal orientation of the NSA treated IGO film is more concentrated compared with the conventional equilibrium annealed one. Furthermore, poly-IGO thin-film transistors (TFTs) with high crystallinity and more centered crystal orientation are demonstrated through material characterization. Electrical characteristics revealed that the poly-IGO TFT exhibits high mobility of ≈86.2 cm2 V s−1 and enhanced reliability after NSA treatment. These findings will advance the design and improvement of oxide semiconductor memory applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145183246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors 仅用两个动态记忆电阻器的神经信息处理和时间序列预测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-28 DOI: 10.1002/aelm.202500353

Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter

{"title":"Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors","authors":"Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter","doi":"10.1002/aelm.202500353","DOIUrl":"https://doi.org/10.1002/aelm.202500353","url":null,"abstract":"Memristive devices are commonly benchmarked by the multi‐level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical properties of memristors, such as the tailorable response times arising from the exponential voltage dependence of the resistive switching speed remain largely unexploited. Here, an information processing scheme which fundamentally relies on the latter is proposed. Simple dynamical memristor circuits capable of solving complex temporal information processing tasks are realized. A scheme is presented in which a single non‐volatile meristor and a series resistor can perform temporal pattern recognition tasks, such as the discrimination of sub‐threshold and super‐threshold voltage pulses, or the identification of neural spikes buried in high noise. By coupling to an oscillator circuit of a volatile Mott memristor, a complete neural circuit is realized that fires an output pulse upon signal detection and resets itself in a fully autonomous manner. Furthermore, a time series prediction circuit is implemented using a dynamic layer of only two memristors and a readout layer based on the linear combination of their output signals. This scheme can learn the operation of an external dynamical system and predict its output with high accuracy.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145182839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward All-Carbon Electronics Buried in Diamond 迈向埋藏在钻石中的全碳电子器件

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-27 DOI: 10.1002/aelm.202500267

Calum S. Henderson, Patrick S. Salter, Emil T. Jonasson, Richard B. Jackman

引用次数: 0

Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance 采用超薄Al2O3钝化和低热预算退火的全溅射a-IGZO tft提高逻辑电路性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-27 DOI: 10.1002/aelm.202500505

Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He

{"title":"Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance","authors":"Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He","doi":"10.1002/aelm.202500505","DOIUrl":"https://doi.org/10.1002/aelm.202500505","url":null,"abstract":"Developing low-temperature sputtering for gate dielectrics is crucial for simple, flexible oxide TFT fabrication. However, such films suffer from low capacitance, high leakage, and high interfacial defects. This work proposes a synergistic strategy using an ultrathin alumina passivation layer combined with ultraviolet-assisted oxygen ambient rapid thermal annealing (UV-ORTA) to enable fully low-temperature sputtered high-performance amorphous indium gallium zinc oxide (a-IGZO) TFTs. The UV-ORTA process significantly improves the gate dielectric by reducing oxygen vacancies, increasing optical bandgap, and boosting capacitance density. The sputtered alumina layer effectively optimizes the dielectric/active layer interface, reducing defect density comparably to atomic layer deposition. TFTs fabricated entirely by sputtering at 200 °C demonstrate high performance: saturation mobility of 14.5 cm2·V−1·s−1, on/off ratio of 8.6 × 106, subthreshold swing of 0.09 V/dec, and good bias stability. Resulting inverters show full-swing operation, sensitive dynamic response, excellent frequency stability, and a voltage gain exceeding 12. This strategy provides a promising solution for low-temperature, fully-sputtered all-oxide TFTs compatible with flexible displays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic Modulation of Polarization and Leakage Current in MPB-HZO Capacitors via TiO2 Interlayer TiO2中间层协同调制MPB-HZO电容器的极化和漏电流

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-27 DOI: 10.1002/aelm.202500314

Changhyeon Han, Been Kwak, Joonhyeok Choi, Sung-Wook Park, Dahye Yu, Minsuk Song, Rino Choi, Daewoong Kwon

引用次数: 0

Enhancing Electrical Impedance Based Deformation Sensing with Dielectric Current Guide 介质电流波导增强基于电阻抗的变形传感

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-26 DOI: 10.1002/aelm.202500365

Arsen Abdulali, David Hardman, Yue Xie, Fumiya Iida

{"title":"Enhancing Electrical Impedance Based Deformation Sensing with Dielectric Current Guide","authors":"Arsen Abdulali, David Hardman, Yue Xie, Fumiya Iida","doi":"10.1002/aelm.202500365","DOIUrl":"https://doi.org/10.1002/aelm.202500365","url":null,"abstract":"Sensing the deformation of soft robots is vital for effective control and interaction with the environment. Electrical impedance tomography (EIT) enables such sensing by monitoring changes in conductivity, but its sensitivity is often highest near the electrodes, limiting performance for distant deformations. Existing strategies to address this limitation typically rely on introducing conductive material heterogeneities, such as anisotropic or patterned conductors, to redirect current flow. In this work, a fundamentally different approach is presented: utilizing a dielectric guide to manipulate the electric field within the conductive body. This method leverages widely used soft robotic materials, such as silicone, in a new role as a passive electric field guide, allowing reconfiguration of sensitivity distributions without embedding conductive components. Physical experiments with a conductive hydrogel cylinder show that the dielectric guide increases deformation sensing accuracy by 21%, reduces sensitivity to noise, and enables a reduction in the number of required EIT channels. This work establishes dielectric-based field manipulation as a novel design strategy for high-fidelity, low-interference proprioception in soft robotics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145140640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0