Advanced Electronic Materials最新文献

{"title":"Side-Chain Branching Dictates the σ–S Coupling in Conjugated Polymer Thermoelectrics","authors":"Yingyao Zhang, So-Huei Kang, Po Chen, Huadeng Xie, Qinfang Zhang, Seoyoung Kim, Donghoo Won, Zilong Zhang, Chi Li, Liang Liu, Qi Zhu, Feiyan Wu, Lie Chen, Reza Keshavarzia, Changduk Yang, Peng Gao","doi":"10.1002/aelm.202500888","DOIUrl":"https://doi.org/10.1002/aelm.202500888","url":null,"abstract":"Understanding the intrinsic coupling between electrical conductivity (σ) and the Seebeck coefficient (S) remains a central challenge in organic thermoelectrics, where energetic disorder and charge transport are highly sensitive to molecular design. Here, we show that precise control over the <i>side-chain branching position</i> provides an effective structural lever to tune the σ–S relationship in conjugated polymers. Two DPP–selenophene copolymers with identical backbones but branched at distinct positions exhibit markedly different molecular packing, charge-carrier delocalization, and density-of-states (DOS) widths. Polymers with more distant branching points form tighter π–π stacks, yielding enhanced carrier mobility and a narrower DOS that collectively boost σ to 129.3 S cm⁻¹. In contrast, closer branching induces greater energetic disorder and broader DOS distributions, resulting in a substantially higher S of 160 µV K⁻¹. Despite their contrasting transport characteristics, both polymers deliver similar peak power factors owing to complementary changes in σ and S. These results identify side-chain branching as a previously underappreciated design parameter that mechanistically governs the coupling between conductivity and Seebeck coefficient in organic thermoelectric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147753473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion-Gating Reservoir Computing for Preprocessing-Free Speech Recognition from Throat Vibrations","authors":"Daiki Nishioka, Akito Tateyama, Hina Kitano, Takashi Nakanishi, Kazuya Terabe, Takashi Tsuchiya","doi":"10.1002/aelm.202600006","DOIUrl":"https://doi.org/10.1002/aelm.202600006","url":null,"abstract":"Physical reservoir computing offers a promising route to efficient edge-AI, yet most reservoir-based speech-recognition demonstrations still rely on microphones and digital preprocessing. Here, we report a real-time spoken-digit recognition system that directly processes throat vibrations by integrating a π–gel-electret mechano-electric generator (MEG) sensor with a multi-channel ion-gel/graphene ion-gating reservoir (IGR). The MEG, a free-deformable electret-based vibration sensor, converts articulation-induced throat-surface vibrations into voltage signals, which are then transformed into pulse sequences and applied directly to the IGR gate without any spectral or handcrafted feature extraction. Channel-dependent Dirac-point shifts, nonlinear electric-double-layer dynamics, and distinct relaxation behaviors in the IGR expand the one-dimensional MEG output into high-dimensional reservoir states, which are decoded using a simple linear classifier. This hybrid MEG–IGR system achieves an impressive real-time spoken-digit recognition accuracy of 96.8%, demonstrating that ion-gating reservoirs can efficiently extract discriminative spatiotemporal features from raw biomechanical signals. By eliminating frequency-domain preprocessing and enabling compact, low-power front-end computation, the approach provides a viable pathway for on-device speech interfaces. Beyond speech recognition, direct throat-vibration sensing opens opportunities for robust human–machine interfaces, assistive communication technologies, and secure authentication systems based on spoof-resistant biomechanical signatures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147751662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films","authors":"Yanbin Chen, Yiqun Liu, Xing Xu, Jing Ma, Ce-wen Nan, Chonglin Chen","doi":"10.1002/aelm.202500566","DOIUrl":"https://doi.org/10.1002/aelm.202500566","url":null,"abstract":"Understanding photoinduced phenomena in complex oxides is crucial for developing next-generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light-induced photoconductivity in epitaxial PrBa_1-xCa_xCo₂O_5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition. Following controlled post-annealing to induce oxygen deficiency, the oxygen-deficient films exhibit a 1.35-fold enhancement in photoresponse compared to oxygen-rich counterparts under 365 nm illumination with a power density of 60 mW cm⁻². This enhanced photoresponse originates from increased carrier density due to the trapping of photoexcited electrons at oxygen vacancies, and the photoresponse behavior is highly tunable by both pulse width and light density. Notably, the oxygen-deficient films demonstrate paired-pulse facilitation (PPF) behavior under 1 s excitation pulse, and the photoresponse remains almost constant even when the readout voltage is reduced by two orders of magnitude down to 1 mV. These findings highlight the potential of cobaltite oxides as promising platforms for low-power, light-tunable oxide electronics and UV photonic sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147735830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane-Based Oxide Heterostructures","authors":"Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee-Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel","doi":"10.1002/aelm.202500890","DOIUrl":"https://doi.org/10.1002/aelm.202500890","url":null,"abstract":"Engineering complex oxide heterostructures and their interfaces has revealed a plethora of emergent electronic and magnetic properties. To achieve these functionalities beyond conventional epitaxy, building heterogeneous integrated electronic architectures have been possible from the advances in free-standing oxides and their integration with semiconductors. However, to harness the physical phenomena of oxides in such co-integrated environments, it is necessary to achieve atomically defined membrane-based oxide heterostructures and subsequent control of charge-transfer. Here, we report on the direct growth-control of the surface termination of SrTiO₃ membranes, eliminating any B-HF requirements, and subsequent transfer of TiO₂-terminated SrTiO₃ membranes onto silicon (Si) via a sacrificial layer route. This approach yields atomically defined step-terraced membrane-based substrates on silicon support. By systematic growth control of LaAlO₃ on these templates, we demonstrate distinct signatures of oxygen-vacancy-induced (ionic) and intrinsic (electronic) charge transfer mechanisms. A systematic crossover between these processes is observed, based on near-ambient pressure XPS, probing reversible and irreversible contributions of interfacial charge transfer during redox-cycling. These results indicates that TiO₂-termination in the oxide membrane may have been achieved, which is a prerequisite for tailoring and fine-tuning membrane-based oxide heterointerfaces for electronic and ionic phenomena in confined systems beyond conventional epitaxy.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147739594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Metal-Perovskite Interfaces: Electronic and Transport Properties of Au-Bromide Perovskites Contacts","authors":"Xinbiao Wang, Qi Zhang, Jing Li, Ji-Sang Park, Yiming Yang, Letian Dou, Euyheon Hwang","doi":"10.1002/aelm.202500269","DOIUrl":"https://doi.org/10.1002/aelm.202500269","url":null,"abstract":"Minimizing contact resistance between metal electrodes and perovskites remains a critical challenge in developing perovskite-based electronic and optoelectronic devices. Despite extensive experimental and theoretical efforts to minimize the contact resistance, atomic-level insights into metal-perovskite interfaces remain insufficiently understood. In this paper, we investigate the electronic and transport properties of 2D hybrid organic–inorganic perovskites, specifically (BA)₂PbBr₄ and (PEA)₂PbBr₄, which consist of monolayer bromide perovskite layers with different organic spacer molecules: n-butylammonium (BA) and phenylethylammonium (PEA) cations. We provide a comprehensive analysis of the Au/perovskites interface, considering two contact configurations, i.e., top-contact and edge-contact. We perform first-principles calculations and use the nonequilibrium Green's function formalism to calculate the transport characteristics. We find that a Schottky barrier forms in the top-contact configuration, but the edge-contact configuration shows ohmic behavior for both Au/(BA)₂PbBr₄ and Au/(PEA)₂PbBr₄. The edge-contact configuration also enables highly efficient charge injection with a negligible interfacial tunneling barrier due to Au-induced midgap states. For the top contact configuration, Au/(PEA)₂PbBr₄ shows better transport behavior compared to (BA)₂PbBr₄, which is attributed to its lower tunneling barrier and higher density of metal-induced midgap states. This work provides theoretical guidelines for designing low-resistance metal-2D hybrid perovskite contacts.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147735831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin-Film Contact-Controlled Transistors","authors":"Eva Bestelink, Jean-Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea","doi":"10.1002/aelm.70401","DOIUrl":"https://doi.org/10.1002/aelm.70401","url":null,"abstract":"The ability to sense and control temperature reliably in low-cost, flexible systems is a key enabler for advances in health monitoring, energy storage, and bioengineering. Here, we show that contact-controlled thin-film transistors, including source-gated and multimodal devices, provide a powerful platform for circuit design. By exploiting the intrinsic sensitivity of charge injection at the source contact, we realize compact circuits that function either as highly sensitive temperature sensors or as temperature-stabilized current references. These behaviors are achieved through simple changes in device geometry and topology, demonstrated experimentally on flexible microcrystalline silicon and supported by simulations. The circuits operate directly from common battery supplies without regulators, offering a manufacturable solution, compatible with a wide range of electronic materials and processes. A compact mathematical framework and a demonstrative application highlight the generality of this approach. This work establishes contact-controlled transistors as versatile building blocks for robust, adaptive circuits in distributed electronics, with implications from wearable health technologies to chemical battery management and lab-on-a-chip platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147739595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional TiO2-Graphene Hybrid Interfaces for Printable High-Energy-Density Polymer Thin Film Capacitor","authors":"Yujia Fan, Yujia Li, Ruixiang Li, Shaoliang Guan, Mengyan Nie, Shahab Akhavan, Buddha Deka Boruah, Mingqing Wang","doi":"10.1002/aelm.202500854","DOIUrl":"https://doi.org/10.1002/aelm.202500854","url":null,"abstract":"The rapid advancement of flexible and wearable electronics demands printable thin-film capacitors that combine high dielectric performance with scalable fabrication. However, achieving this balance in polymer dielectrics remains challenging, as enhancements in dielectric constant typically come at the expense of increased loss and reduced breakdown strength. Here, we report an interface-engineered TiO₂-decorated reduced graphene oxide (rGO-TiO₂) hybrid filler for high-performance poly(vinylidene fluoride) (PVDF) dielectric nanocomposites. In this architecture, TiO₂ nanoparticles serve as insulating barriers that prevent rGO restacking while also providing heterogeneous nucleation sites that promote crystallization. The optimized composite achieves a high dielectric constant of ∼2,620 at 1 kHz, a low loss tangent of 0.027, and a robust breakdown strength of 370 kV mm⁻¹ at only 0.8 wt.% filler loading. Structural and thermal analyses reveal that the hybrid filler promotes electroactive β-phase formation, contributing to the enhanced dielectric response. Leveraging its good printability and dispersion stability, the nanocomposite is formulated as a dielectric ink for Sonoplotter-printed micro-capacitors, delivering a volumetric capacitance of 583.7 mF cm⁻³ and an energy density of 1.82 J cm⁻³ at 16.67 kV mm⁻¹, demonstrating proof-of-concept device feasibility. This hybrid interface-engineering strategy offers a promising route toward printable, high-performance polymer dielectrics for integrated flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147735832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High-Performance X-Ray Detection","authors":"Yanan Gong, Zhuangjie Xu, Weidong Zhu, Xiaoxuan Zhang, Zihao Wang, Zeyang Ren, Yanshuang Ba, He Xi, Zhimin Li, Chunfu Zhang, Jincheng Zhang, Yue Hao","doi":"10.1002/aelm.70406","DOIUrl":"https://doi.org/10.1002/aelm.70406","url":null,"abstract":"CsPbBr₃–nanodiamonds (NDs) hybrid wafers are developed through a scalable solid-state grinding and cold‑pressing approach for high‑performance X‑ray detection. Incorporation of trace NDs modulates the mechanochemical reaction environment, accelerates CsPbBr₃ formation, and suppresses CsPb₂Br₅ impurities. Structural, chemical, and optical analyses reveal that NDs promote heterogeneous nucleation, enhance crystallinity, bridge grain boundaries, and passivate interfacial defects via coordination between ND surface groups and undercoordinated Pb²⁺. The optimized hybrid wafer (CsPbBr₃:NDs = 10:0.5) exhibits improved packing density, reduced reflectivity, enhanced charge transport, and significantly lower dark current. Consequently, the device achieves high sensitivity (2796.68 µC Gy_air⁻¹ cm⁻²), stable switching behavior, and an improved detection limit of 11.33 µGy s⁻¹. Thermal imaging measurements further confirm that NDs enhance heat dissipation, contributing to stable operation under continuous X‑ray exposure. This work demonstrates a robust design strategy for perovskite–diamond hybrid wafers and provides a practical route toward durable, low‑cost, and high‑sensitivity solid‑state X‑ray detectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147735833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors","authors":"Seung Joo Myoung, Chang Il Ryoo, Jingyu Park, Dong Hyeop Shin, Su Han Noh, Sae Him Jung, Soohong Eo, Wonjung Kim, Sung Jun Yun, Jae Moon Soh, Yoo Seok Park, Changwook Kim, Dong Myong Kim, Sung‐Jin Choi, Yoon Jung Lee, Ickhyun Song, Dae Hwan Kim","doi":"10.1002/aelm.202500841","DOIUrl":"https://doi.org/10.1002/aelm.202500841","url":null,"abstract":"Self‐aligned top‐gate (SATG) amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) are strong candidates for low‐power display backplanes and back‐end‐of‐line (BEOL)‐integrated circuits. Their scaling, however, is limited by short‐channel effects (SCEs), such as threshold‐voltage (V <jats:sub>T</jats:sub> ) roll‐off and drain‐induced barrier lowering (DIBL), which are strongly influenced by the lateral effective doping profile, N <jats:sub>D</jats:sub> (y), formed by oxygen‐vacancy/hydrogen‐related donor diffusion from the source/drain (S/D) extensions. Conventional transfer length method (TLM) approaches provide only indirect, lumped estimates and often lose accuracy in low‐doping regions. Here, we propose a capacitance–voltage (C–V)‐based extraction technique that directly reconstructs N <jats:sub>D</jats:sub> (y) and key profile parameters—including overlap length (L <jats:sub>OV</jats:sub> ), gradient length (L <jats:sub>Grad</jats:sub> ), and base doping concentration (N <jats:sub>D,Base</jats:sub> )—from measured gate capacitances (C <jats:sub>GG</jats:sub> /C <jats:sub>GS</jats:sub> /C <jats:sub>GD</jats:sub> ). Using L‐split SATG a‐IGZO TFTs with channel lengths ranging from 4.5 to 40 µm, we validate the extracted profiles by directly comparing them with those obtained from a TLM‐based extraction and demonstrate the quantitative prediction of V <jats:sub>T</jats:sub> (V <jats:sub>ON</jats:sub> ) roll‐off across different channel lengths. The results reveal that S/D dopant overlap increases the channel‐center doping N <jats:sub>D,ch</jats:sub> in short channels, thereby accelerating V <jats:sub>T</jats:sub> roll‐off and enhancing DIBL. This C–V‐based lateral profiling framework provides practical diagnostics and design guidelines for suppressing SCEs in future low‐power, high‐reliability oxide electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147733523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures (Adv. Electron. Mater. 8/2026)","authors":"Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani","doi":"10.1002/aelm.70365","DOIUrl":"https://doi.org/10.1002/aelm.70365","url":null,"abstract":"","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"246 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147733477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}