Advanced Electronic Materials最新文献

Bias Induced Ambipolar Transport in Organic Heterojunction Sensors

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-26 DOI: 10.1002/aelm.202400865

Abhishek Kumar, Charles H. Devillers, Rita Meunier‐Prest, Dimitri Sabat, Eric Lesniewska, Marcel Bouvet

{"title":"Bias Induced Ambipolar Transport in Organic Heterojunction Sensors","authors":"Abhishek Kumar, Charles H. Devillers, Rita Meunier‐Prest, Dimitri Sabat, Eric Lesniewska, Marcel Bouvet","doi":"10.1002/aelm.202400865","DOIUrl":"https://doi.org/10.1002/aelm.202400865","url":null,"abstract":"Interface engineering in organic heterostructures is an important approach to tuning the characteristics of organic electronic devices and improving their performances in applications, such as gas sensing. Herein, organic heterostructures containing, a polyporphine (pZnP‐1), perfluorinated copper phthalocyanine (Cu(F16Pc)), and lutetium bis‐phthalocyanine (LuPc2) are synthesized by a combination of electrochemical and PVD methods for investigation of charge transport and ammonia (NH3) sensing application. pZnP‐1 is synthesized by controlled oxidative electropolymerization and reveals a rough surface, which influences the electrical nature of its interface with the phthalocyanine. The electrical properties of the heterojunction devices reveal distinct interfacial and bulk charge transport properties, which are modulated by the thickness of pZnP‐1 and the external electric field. Indeed, the heterojunction device containing a thin film of pZnP‐1 displays n‐type behavior at low bias and p‐type nature at higher bias; i.e., an ambipolar behavior, in which ambipolarity is triggered by the external electric field. On the other hand, the heterojunction device having a thick film of pZnP‐1 exhibits p‐type behavior at all the studied biases. Investigation of NH3 sensing properties of the heterojunction devices highlights the advantages of introducing pZnP‐1 in the heterostructures, which enhances the sensitivity, stability, repeatability, and humidity tolerance of the sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Control of Vortex Motion in Nanoscale Superconductors

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-25 DOI: 10.1002/aelm.202400946

Björn Niedzielski, Jamal Berakdar

引用次数: 0

Exploring the Bioengineering Potential of CoFe2O4-BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-25 DOI: 10.1002/aelm.202500014

Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani

{"title":"Exploring the Bioengineering Potential of CoFe2O4-BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient","authors":"Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani","doi":"10.1002/aelm.202500014","DOIUrl":"https://doi.org/10.1002/aelm.202500014","url":null,"abstract":"Magnetoelectric (ME) materials, especially in the form of core–shell nanoparticles, have gained increasing attention for their potential in bioengineering applications. In particular, cobalt ferrite (CoFe2O4) and barium titanate (BaTiO3) core–shell nanoparticles stand out due to their strong Magneto-Electric (ME) properties. This perspective examines the evolution of the state of the art on CoFe2O4-BaTiO3 core–shell ME nanoparticles (MENPs), describing different methodologies adopted to measure their ME coefficient (α), the main critical parameter correlated with their magnetoelectric behavior. The analysis reveals a broad range of ME coefficients measured, mostly due to heterogeneous measurement techniques and samples. Recently, advancements in measurement technologies, such as scanning tunneling microscopy and piezoresponse force microscopy, have enabled more precise characterizations of these nanoparticles at a single particle scale, leading to the measurement of more precise ME coefficients. A systematic discussion of the recent advancements in the field and future research directions is here outlined, with a particular focus on the role of computational simulations to further deepen the understanding of the ME effects in the development of next-generation multifunctional biomedical devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ecofriendly Printing of Silver Nanowires with Cellulose Binder for Highly Robust Flexible Electronics

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-24 DOI: 10.1002/aelm.202400983

Yuxuan Liu, Ping Ren, Li Yang, Brendan O'Connor, Jingyan Dong, Yong Zhu

引用次数: 0

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202500037

WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian

{"title":"Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices","authors":"WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian","doi":"10.1002/aelm.202500037","DOIUrl":"https://doi.org/10.1002/aelm.202500037","url":null,"abstract":"This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction. The results indicate that as the annealing temperature increases, the composition of the SnS2 based thin film changes while the cycle-to-cycle stability of the device improved. The thin film is examined by X-ray photoelectron spectroscopy (XPS), scanning electronic microscopy (SEM) and atomic force microscopy (AFM), which proves the formation of SnO2/SnS2 heterojunction. Devices with SnO2/SnS2 heterojunction exhibited lower operating voltages and more uniform resistive switching behavior. The RRAM can be repeatedly and consistently switched between a high-resistance state and a low-resistance state over 1000 cycles, with a long data retention time of > 4 × 104 s at room temperature. Meanwhile, this study explores the relationship between this type of resistive memory and the neuromorphic simulation of the human brain. SnO2/SnS2 heterojunction with 224 PJ set power at 0.4 V pulse shows excellent resistive memory characteristics. This study provides a vital reference for high-performance and long-lifespan heterojunction memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"138 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mesoporous Carbon Sphere-Enhanced Flexible Pressure Sensor with Superior Linearity and Wide Range for Wearable Health Monitoring

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202400985

Tianyu Zhu, Wanqing Xu, Chenlin Peng, Lan Sh, Limin Wu

引用次数: 0

Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures (Adv. Electron. Mater. 5/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202570014

Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo

引用次数: 0

Interfacial Photogating of Graphene Field-Effect Transistor for Photosensory Biomolecular Detection

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202400716

Leslie Howe, Yifei Wang, Kalani H. Ellepola, Vinh X. Ho, Rosalie L. Dohmen, Marlo M. Pinto, Wouter D. Hoff, Michael P. Cooney, Nguyen Q. Vinh

{"title":"Interfacial Photogating of Graphene Field-Effect Transistor for Photosensory Biomolecular Detection","authors":"Leslie Howe, Yifei Wang, Kalani H. Ellepola, Vinh X. Ho, Rosalie L. Dohmen, Marlo M. Pinto, Wouter D. Hoff, Michael P. Cooney, Nguyen Q. Vinh","doi":"10.1002/aelm.202400716","DOIUrl":"https://doi.org/10.1002/aelm.202400716","url":null,"abstract":"The photogating effect, induced by a light-driven gate voltage, modulates the potential energy of the active channel in field-effect transistors, leading to a high photoconductive gain of these devices. The effect is particularly pronounced in low-dimensional structures, especially in graphene field-effect transistors. Along with unusual optical and electrical properties, graphene with ultra-high carrier mobility and a highly sensitive surface generates a strong photogating effect in the structure, making it an excellent element for detecting light-sensitive biomolecules. In this work, graphene field-effect transistor biosensors is demonstrated for the rapid detection of photoactive yellow protein in an aqueous solution under optical illumination. The devices exhibit millisecond-scale response times and achieve a detection limit below 5.8 fM under blue-light excitation, consistent with the absorption characteristics of the protein. The photogating effect in graphene field-effect transistors provides a promising approach for developing high-performance, light-sensitive biosensors for biomolecular detection applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-Walled Carbon Nanotubes Suspensions as Liquid Conductors: Electrical and Mechanical Network Interplay 作为液体导体的多壁碳纳米管悬浮液：电气和机械网络的相互作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202400917

Sergio Lago-Garrido, Dominik S. Schmidt, María J. Martín-Alfonso, Lola González-García

{"title":"Multi-Walled Carbon Nanotubes Suspensions as Liquid Conductors: Electrical and Mechanical Network Interplay","authors":"Sergio Lago-Garrido, Dominik S. Schmidt, María J. Martín-Alfonso, Lola González-García","doi":"10.1002/aelm.202400917","DOIUrl":"https://doi.org/10.1002/aelm.202400917","url":null,"abstract":"Soft-adaptive electronics require both sensor and conductor materials. The key parameter for these materials is their mechanoelectrical properties. Liquid metals and solid conductive composites have been exploited in this application field, but both are limited by either their chemical stability or limited flexibility, respectively. Electrofluids are a novel approach toward soft electronic components. They are concentrated colloidal suspensions of conductive particles, in which dynamic contacts retain electrical conductivity under deformation, filling the gap between liquid metals and solid composites. Here, the mechanical and electrical network interplay of electrofluids is studied based on multi-walled carbon nanotubes (MWCNTs) in glycerol. These networks arise at different filler concentrations, showing a different response to external deformations. It is found that electrical conductivity occurs without the presence of a rigid mechanical network, which allows MWCNT suspensions to be electrically conductive even under flow conditions. By performing rheoelectrical measurements, the study observed how the mechanical and electrical networks evolve with the applied deformation. The study demonstrates the applicability of electrofluids with tailored mechanoelectrical properties as soft electrical connectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Depth-Customizable 3D Electrode Array for Recording Functional Connectivity in the Brain

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202500121

Minseok Kim, Sehwan Park, Haeyun Lee, Jimin Lee, Namsun Chou, Hyogeun Shin

{"title":"Depth-Customizable 3D Electrode Array for Recording Functional Connectivity in the Brain","authors":"Minseok Kim, Sehwan Park, Haeyun Lee, Jimin Lee, Namsun Chou, Hyogeun Shin","doi":"10.1002/aelm.202500121","DOIUrl":"https://doi.org/10.1002/aelm.202500121","url":null,"abstract":"Understanding neural activity across multiple brain regions, especially in three dimensions, is essential for advancing neuroscience research. However, traditional 3D electrode arrays are often restricted to fixed depths, limiting their ability to probe complex brain structures. In this study, a depth-customizable, flexible 3D multi-shank electrode array that produces precise neural recordings at various brain depths is developed. Integrating 2D flexible electrode arrays with a modular supporting board allowed the insertion depth to be easily adjusted without re-fabrication. In vivo experiments produce successful recordings from the motor cortex, somatosensory cortex, and deep structures such as the substantia nigra. Functional connectivity analysis also reveals strong correlations between the substantia nigra and motor cortex, confirming that the developed array can be used to accurately assess neural network dynamics in 3D space. Due to its greater experimental flexibility, the depth-customizable 3D electrode array developed in this study represents a versatile and cost-effective tool for assessing functional connectivity across the entire brain.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0