Advanced Electronic Materials最新文献

Hole Trap Formation in Quantum Dot Light-Emitting Diodes Under Electrical Stress

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-20 DOI: 10.1002/aelm.202400231

Jiangxia Huang, Wenxin Lin, Shuxin Li, Jiahao Li, Haonan Feng, Dongchen Lan, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Paul W. M. Blom, Quan Niu, Yuguang Ma

{"title":"Hole Trap Formation in Quantum Dot Light-Emitting Diodes Under Electrical Stress","authors":"Jiangxia Huang, Wenxin Lin, Shuxin Li, Jiahao Li, Haonan Feng, Dongchen Lan, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Paul W. M. Blom, Quan Niu, Yuguang Ma","doi":"10.1002/aelm.202400231","DOIUrl":"https://doi.org/10.1002/aelm.202400231","url":null,"abstract":"Quantum dot light-emitting diodes (QLEDs) have emerged as promising candidates for next-generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to the rapid degradation of QLEDs remains unclear. Here, the formation of hole traps is demonstrated as the critical reason for the degradation of QLEDs. Applying impedance measurements, an enhancement of the negative capacitance is observed and provides straightforward evidence for the formation of hole traps. The generated hole traps introduce additional trap-assisted recombination of trapped holes with free electrons, as reflected by the evolution and voltage dependence of the electroluminescence spectra, leading to efficiency loss in degraded devices. By performing numerical simulations to model the degradation of QLEDs, the formation of hole traps is quantified as a function of aging time. The calculated hole trap density is consistent with that as measured from impedance spectroscopy, validating that the hole trap formation is the mechanism for the voltage drift and efficiency decrease of QLEDs under constant current stress.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142867266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Stretchable LED Display Using Liquid Metal and Molybdenum-Barriered Multilayer Electrodes with Long-Term Reliability

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-20 DOI: 10.1002/aelm.202400676

Masashi Miyakawa, Hiroshi Tsuji, Tatsuya Takei, Toshihiro Yamamoto, Yoshihide Fujisaki, Mitsuru Nakata

{"title":"Highly Stretchable LED Display Using Liquid Metal and Molybdenum-Barriered Multilayer Electrodes with Long-Term Reliability","authors":"Masashi Miyakawa, Hiroshi Tsuji, Tatsuya Takei, Toshihiro Yamamoto, Yoshihide Fujisaki, Mitsuru Nakata","doi":"10.1002/aelm.202400676","DOIUrl":"https://doi.org/10.1002/aelm.202400676","url":null,"abstract":"Promising freeform deformable displays require highly stretchable interconnection lines and reliable, low-resistance connections. To this end, a stretchable light-emitting diode (LED) display with a molybdenum-barriered multilayer electrode using liquid metal (LM) alloys with high reliability and stretchability under repeated deformations of 12 000 times and long-term stability over 300 days is introduced. The developed multilayer-stacked electrode shows consistent and stable stretchable electrical connections with long-term reliability, even under continuous mechanical deformation. Thus, the developed display with micro- or mini-LED components can be deformed, such as domes and twice folding like a handkerchief. Highly stretchable LM fine lines are developed by printing directly onto the acrylic adhesive layer, which enables high stretchability even under 100% uniaxial strain with a 100 µm narrow width. The stretchable display technology has successfully realized form-free displays that flexibly deform into 3D shapes for advanced wearable and freeform applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"99 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142857649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-18 DOI: 10.1002/aelm.202400656

Ali Solgi, Anton Weissbach, Yahya Asl Soleimani, Yeohoon Yoon, Gert Krauss, Tommy Meier, Hsin Tseng, Mukundan Thelakkat, Karl Leo, Hans Kleemann

{"title":"Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation","authors":"Ali Solgi, Anton Weissbach, Yahya Asl Soleimani, Yeohoon Yoon, Gert Krauss, Tommy Meier, Hsin Tseng, Mukundan Thelakkat, Karl Leo, Hans Kleemann","doi":"10.1002/aelm.202400656","DOIUrl":"https://doi.org/10.1002/aelm.202400656","url":null,"abstract":"Organic electrochemical transistors (OECTs) are gaining attention for their ease of fabrication, flexibility, and biocompatibility, with applications in biosignal sensing, neuromorphic computing, wearable health monitors, environmental monitoring, and bioelectronic interfaces. The interactions between ionic and electronic subcircuits in OECTs raise fundamental questions about the relationship between device design and performance. A major challenge is to meet specific integration, processing, and device performance requirements. While miniaturization of OECTs can improve transconductance and maximum operating frequency, it often compromises cost effectiveness and integratability. This work investigates an OECT architecture that incorporates both a crosslinkable printed aqueous electrolyte and a printed poly(3,4‐ethylenedioxythiophene):ploy(4‐styrenesulfonate) (PEDOT:PSS) top‐gate to achieve efficient gating, higher operating frequencies, and easy integration with low‐cost printing techniques. Improved performance is demonstrated in this top‐gate OECTs over conventional side‐gate structures, achieving sub‐millisecond device operation with channel lengths of 100 µm. This configuration shows practical potential for circuit integration, as demonstrated with a complementary inverter using an ambipolar material.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142841626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GeTe/Sb2Te3 Super-Lattices: Impact of Atomic Structure on the RESET Current of Phase-Change Memory Devices

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-17 DOI: 10.1002/aelm.202400290

Damien Térébénec, Françoise Hippert, Nicolas Bernier, Niccolo Castellani, Pierre Noé

{"title":"GeTe/Sb2Te3 Super-Lattices: Impact of Atomic Structure on the RESET Current of Phase-Change Memory Devices","authors":"Damien Térébénec, Françoise Hippert, Nicolas Bernier, Niccolo Castellani, Pierre Noé","doi":"10.1002/aelm.202400290","DOIUrl":"https://doi.org/10.1002/aelm.202400290","url":null,"abstract":"Phase change memories (PCMs) are at the heart of modern memory technology, offering multi-level storage, fast read/write operations, and non-volatility, bridging the gap between volatile DRAM and non-volatile Flash. The reversible transition between amorphous and crystalline states of phase-change materials such as GeTe or Ge2Sb2Te5 is at the basis of PCM devices. Despite their importance, PCM devices face challenges including high power consumption during the RESET operation. Current research efforts focus on improving device architecture and exploring alternative phase-change materials such as GeTe/Sb2Te3 super-lattices (SLs), for which a reduced programming power consumption is observed compared with standard PCMs. Herein, by combining X-ray diffraction and scanning transmission electron microscopy imaging of SL thin films with the study of the same SL in PCM devices, it is shown that it is possible to significantly decrease RESET energy of the device, without modifying the SL composition, by reducing the amount of structural defects through annealing treatment. The best device properties are obtained after transforming the SL into a defect-free, highly out-of-plane oriented rhombohedral phase. These results offer a promising avenue for further improving the performance of SL-based PCM devices through structural optimization.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"79 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-17 DOI: 10.1002/aelm.202400910

Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo

{"title":"Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures","authors":"Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo","doi":"10.1002/aelm.202400910","DOIUrl":"https://doi.org/10.1002/aelm.202400910","url":null,"abstract":"This work demonstrates the floating gate devices featuring a small molecule-insulator-small molecule-insulator sandwiched structure, where the versatile electrical characteristics can be achieved depending on the thickness of the intermediate parylene tunneling dielectric layer (TDL). For the thin parylene layer of 15 nm (parallel DNTT channel transistor), channel also forms in the lower DNTT layer, allowing hole carriers to tunnel through the parylene TDL. The parallel DNTT channel transistor exhibits electrical characteristics similar to a conventional DNTT transistor with the increased contact resistance due to the presence of the intermediate parylene layer. When the parylene TDL is slightly thicker to be 45 nm, negative differential transconductance followed by current saturation behavior is observed, due to tunneling through the parylene TDL. Finally, photomemory is demonstrated with the sufficiently thick parylene layer (≈80 nm), where hole carriers injected from the electrode cannot tunnel through the parylene TDL, allowing the lower DNTT layer to act as a floating gate for the photogenerated charge carriers. This photomemory shows programmability under the light illumination with the specific wavelength as well as the robust retention and endurance characteristics. Furthermore, the photomemory has been successfully implemented on flexible paper substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design 通过纳米叠层设计增强 HZO FeCap 的电容记忆窗口

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-17 DOI: 10.1002/aelm.202400764

Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang

{"title":"Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design","authors":"Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang","doi":"10.1002/aelm.202400764","DOIUrl":"https://doi.org/10.1002/aelm.202400764","url":null,"abstract":"Recently, a capacitive array based on Hf0.5Zr0.5O2 (HZO) has been proposed as an alternative to conventional resistive crossbar arrays for compute-in-memory (CIM). This array operates through a capacitive memory window (CMWε). This arises due to interface asymmetry caused by varying defect densities at the top and bottom interfaces. However, the current CMWε is insufficient, necessitating strategies to enhance it. In this study, the impact of stack design on CMWε is examined and it is demonstrated that it is possible to precisely control critical fields in I–V curves to achieve a significantly higher CMWε. A record high CMWε is achieved through an innovative nanolaminate design. The observed characteristics are explained by the Landau-Ginzburg-Devonshire (LGD) model and the presence of extra critical fields during I–V sweep. The final device exhibits excellent uniformity and high-speed operation. Additionally, a substantial memory window for a non-destructive read operation (NDRO) is confirmed using AC pulses. Alongside detailed electrical characterization, TEM and XRD analyses for an in-depth investigation is employed to uncover the root cause of the superior characteristics achieved. Ultimately, for analog vector-matrix multiplication (VMM) in a capacitive array, the carefully designed nanolaminate stack significantly outperforms HZO (0.5) in both output voltage and voltage swing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulse Dynamics in Reduced Graphene Oxide Electrolyte-Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion-To-Electron Transduction 还原石墨烯氧化物电解质门控晶体管中的脉冲动力学：电荷记忆效应和离子-电子转换机制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-17 DOI: 10.1002/aelm.202400791

Guilherme Segolin Selmi, Eduardo Rodrigues Lourenço Neto, Gabrielle Coelho Lelis, Anderson Kenji Okazaki, Antonio Riul, Maria Luisa Braunger, Rafael Furlan de Oliveira

{"title":"Pulse Dynamics in Reduced Graphene Oxide Electrolyte-Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion-To-Electron Transduction","authors":"Guilherme Segolin Selmi, Eduardo Rodrigues Lourenço Neto, Gabrielle Coelho Lelis, Anderson Kenji Okazaki, Antonio Riul, Maria Luisa Braunger, Rafael Furlan de Oliveira","doi":"10.1002/aelm.202400791","DOIUrl":"https://doi.org/10.1002/aelm.202400791","url":null,"abstract":"Electrolyte-gated transistors (EGTs) are widely employed in bioelectronics due to their ability to bridge ionic and electronic phenomena in a single device. Among potential materials, reduced graphene oxide (rGO) has gained significant attention due to its ambipolar current response, quantum capacitance, and tunable conductivity. However, the rGO EGT dynamic behavior remains significantly unexplored. Here, the time-dependent response of rGO EGTs is systematically investigated under gate voltage pulsing across different time scales (10 ms to 40 s) and amplitudes (up to |±0.8 V|). Significant charge memory is observed, particularly for long (40 s) pulses at 0.8 V, with effects also evident for shorter (1 s) and weaker stimuli (0.6 V). Multiple low-level (0.1 V) fast pulsing (100 ms) further demonstrate charge retention post-stimulation. All these characteristics are attributed to a complex interplay between ion entrapment within the rGO film, electrical double-layer formation, and charge transfer processes. The stability of rGO EGTs under prolonged bias stress is also examined, aiming to contribute to the development of more robust devices. These findings revealed the complex role of electrolyte ions and electronic carriers governing the ion-to-electron transduction and charge memory effects in rGO EGTs, contributing to the advancement of the next-generation bioelectronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-16 DOI: 10.1002/aelm.202400689

Feiran Wang, Charles E. D. Heaton, Nathan D. Cottam, Jonathan S. Austin, Jisun Im, T. Mark Fromhold, Ricky D. Wildman, Richard J. M. Hague, Christopher J. Tuck, Oleg Makarovsky, Lyudmila Turyanska

{"title":"Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics","authors":"Feiran Wang, Charles E. D. Heaton, Nathan D. Cottam, Jonathan S. Austin, Jisun Im, T. Mark Fromhold, Ricky D. Wildman, Richard J. M. Hague, Christopher J. Tuck, Oleg Makarovsky, Lyudmila Turyanska","doi":"10.1002/aelm.202400689","DOIUrl":"https://doi.org/10.1002/aelm.202400689","url":null,"abstract":"The exceptional electrical properties of graphene with high sensitivity to external stimuli make it an ideal candidate for advanced sensing technologies. Inkjet printing of graphene (iGr) can provide a versatile platform for multifunctional sensor manufacturing. Here the multifunctional sensor enabled by combining the design freedom of inkjet printing with the unique properties of graphene networks is reported on. A fully inkjet printed multimaterial device consists of two layers of iGr stripes separated by a dielectric polymeric layer of tripropylene glycol diacrylate (TPGDA). In these devices, the bottom iGr layer, capped with TPGDA, provides temperature sensing, the top uncapped iGr is sensitive to the external atmosphere, while the capacitance between the two iGr layers is sensitive to the applied pressure. The fast, sensitive, and reproducible performance of these sensors are demonstrated in response to environmental stimuli, such as pressure, temperature, humidity, and magnetic field. The devices are capable of simultaneous sensing of multiple factors and are successfully manufactured on a variety of substrates, including Si/SiO2, flexible Kapton films and textiles, demonstrating their potential impact in applications compatible with silicon technologies as well as wearable and healthcare devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoinduced Melting of V4O7 Correlated State 光诱导 V4O7 相关态熔化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400539

Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko

{"title":"Photoinduced Melting of V4O7 Correlated State","authors":"Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko","doi":"10.1002/aelm.202400539","DOIUrl":"https://doi.org/10.1002/aelm.202400539","url":null,"abstract":"The compound V4O7 is one of the Magnéli phase (VnO2n − 1, n = 3, 4, …, 9) correlated vanadium oxides with distinct intriguing electronic and structural properties. The possibility to manipulate the phase state of V4O7 on an ultrafast time scale by light makes this material promising for potential applications in photonics, optoelectronics, quantum, and neuromorphic circuit design. In this work, the ultrafast spectroscopy of V4O7 reveals the second-order nature of the photoinduced insulator-to-metal transition, emphasizing electronic and lattice contributions. The findings reveal the influence of the laser excitation level and temperature on these dynamics, providing a comprehensive understanding of V4O7 structural changes and response to external stimuli. The phenomenological model based on the Landau–Ginzburg formalism provides a robust framework for explaining the photoinduced transition dynamics, showing a detailed picture of the light interaction with the electronic and lattice subsystems. This integrated approach significantly enhances the understanding of V4O7 complex behavior upon photoexcitation, opening new possibilities for developing new optoelectronic devices and noninvasive optical control of the phase transition pathways in vanadates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric-Assisted Ion Dynamics for Prolonged Tactile Cognizance in a Biomimetic Memory-in-Sensor System

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400550

Ritamay Bhunia, Joo Sung Kim, Hayoung Oh, Dong Jun Kim, Seokyeong Lee, Cheolmin Park, Do Hwan Kim

{"title":"Ferroelectric-Assisted Ion Dynamics for Prolonged Tactile Cognizance in a Biomimetic Memory-in-Sensor System","authors":"Ritamay Bhunia, Joo Sung Kim, Hayoung Oh, Dong Jun Kim, Seokyeong Lee, Cheolmin Park, Do Hwan Kim","doi":"10.1002/aelm.202400550","DOIUrl":"https://doi.org/10.1002/aelm.202400550","url":null,"abstract":"The advancements in developing low-powered artificial tactile cognition devices, inspired by the iontronic-reliant human haptic sensory system, show great potential in future robotics and prosthetics. However, poor tactile memory and the complexity of integrating diverse modules for tactile sensing and neuromorphic functionalities pose a formidable challenge. Here, a mechanoreceptor-inspired tactile memory-in-sensor (TMIS) device is presented, employing ferroelectric-assisted ion dynamics (FAID) in FAID-based synaptic tactile transistor (FAID-STT). This approach improves the long-term memory (LTM) of tactile information while minimizing power consumption, all within a unified device architecture of TMIS. The FAID mechanism intricately combines the release of trapped ions solely under mechanical stress with remnant ferroelectric polarization induced by voltage stimulation, ensuring prolonged memory retention. Consequently, the FAID-STT exhibits a voltage-dependent memory effect stemming from the augmentation of ferroelectric dipole polarization, offering uninterrupted tactile memory for over 12 min without requiring additional power inputs for memory retention.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0