Advanced Electronic Materials最新文献

{"title":"Direct Electrocaloric Characterization of Polyvinylidene Fluoride‐Based Co‐ and Terpolymers Over a Wide Temperature Range","authors":"Uros Prah, Veronika Kovacova, Juliette Cardoletti, Youri Nouchokgwe, Asmaa El Moul, Xavier Chevalier, Torsten Granzow, Fabrice Domingues Dos Santos, Emmanuel Defay","doi":"10.1002/aelm.70625","DOIUrl":"https://doi.org/10.1002/aelm.70625","url":null,"abstract":"Polyvinylidene fluoride‐based polymers have emerged as promising materials for flexible and portable electronics, attracting significant attention as alternatives to electrocaloric ceramics for more energy‐efficient cooling. Although many studies report record‐high electrocaloric effect values and initial proof‐of‐concept devices, the lack of comparative temperature‐dependent studies and unexplained large discrepancies among various direct electrocaloric characterization methods hinder their full commercial exploitation. In this work, a systematic study of trifluoroethylene‐based copolymers and chloro(tri)fluoroethylene‐based terpolymers over a broad temperature range from room temperature to 100°C using infrared imaging shows that commercially available polymers can compete with the best electrocaloric ceramics, exhibiting a large electrocaloric effect of ∼4.5 K at 100 V µm <jats:sup>−1</jats:sup> in several compositions. Furthermore, distinctly separated electrocaloric‐effect peak values enable targeting different temperature regimes, making ferroelectric polymers attractive for a wide range of cooling applications. The established direct electrocaloric characterization method based on fast thermometry captures electrocaloric temperature changes near the adiabatic limit, resulting in lower measurement uncertainty and providing a valuable tool for resolving discrepancies in reported electrocaloric effects and contributing to standardization. In addition, we show that a simplified indirect Landau approach can reasonably estimate the magnitude of the electrocaloric effect, offering an additional method for evaluating different compositions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast Homoepitaxy on (100) β‐Ga 2 O 3 Substrates With Large Grown‐In Offcut","authors":"M. Brooks Tellekamp, Drew Haven, David Joyce, John Mangum, Henry Garland, Robert Lavelle, Kevin Schulte, Anna Sacchi, Matt Young, Andriy Zakutayev","doi":"10.1002/aelm.70621","DOIUrl":"https://doi.org/10.1002/aelm.70621","url":null,"abstract":"Crystalline orientation and offcut angle are non‐trivial for low‐symmetry β‐Ga <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> , where anisotropy impacts bulk and thin film synthesis, material properties, and power device fabrication and performance. Scalable (100)‐oriented β‐Ga <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> wafers are desirable for electronic devices but are not typically used as substrates due to 10–30x slower epitaxial growth rates compared to other orientations. Here we report molecular beam epitaxy (MBE) growth rates equal to the fast growth direction by using (100) Ga <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> wafers with large grown‐in offcuts. Offcuts up to 13.4° (β‐angle minus 90°), with vertically aligned (001) planes, are directly grown by Edge‐defined Film‐fed Growth (EFG) of 2D ribbons with rotated seed crystals, avoiding material loss from crystal boule offcut methods while maintaining high crystalline quality. Chemical‐mechanical polishing produces epitaxy‐ready substrates, and step flow growth is observed across offcuts. We measure an unintentional n‐type doping density &lt; 2 × 10 <jats:sup>15</jats:sup> cm <jats:sup>−3</jats:sup> , one of the lowest values reported for MBE. Planar Schottky barrier diodes on these epilayers without edge termination have an on/off ratio ∼10 <jats:sup>5</jats:sup> and an average breakdown field of 1.56 MV/cm, comparable to or exceeding similar devices fabricated on other orientations. Overall, these results illustrate the importance of orientation and offcut, validating the use of the scalable (100)‐oriented β‐Ga <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> wafers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Operando X‐Ray Diffraction Analysis of Microscopic Structural Response in 33‐ and 31‐Mode Geometries Under an Applied Electric Field in (100)/(001)‐Oriented Epitaxial Tetragonal Pb(Zr, Ti)O 3 Films Grown on (100) Si Substrates","authors":"Miki Nakahata, Kazuki Okamoto, Keisuke Ishihama, Takao Shimizu, Tomoyuki Koganezawa, Rosantha Kumara, Tomotaka Nakatani, Osamu Ikeda, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo","doi":"10.1002/aelm.70638","DOIUrl":"https://doi.org/10.1002/aelm.70638","url":null,"abstract":"Piezoelectric thin films have been widely used in microelectromechanical systems (MEMS), where Pb(Zr <jats:italic> <jats:sub>x</jats:sub> </jats:italic> Ti <jats:sub>1‐</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic> )O <jats:sub>3</jats:sub> is a representative material. To achieve significant piezoelectric responses, multidomain structural changes under electric fields must be understood via domain‐lattice observations. Here, (100)/(001)‐oriented tetragonal Pb(Zr <jats:italic> <jats:sub>x</jats:sub> </jats:italic> Ti <jats:sub>1‐</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic> )O <jats:sub>3</jats:sub> epitaxial films with a small (001)‐oriented domain fraction were grown on (100) Si substrates for piezo‐MEMS. Although previous studies have primarily focused on out‐of‐plane piezoelectric responses (33‐mode actuation), in‐plane (31‐mode actuation) is predominantly utilized in piezo‐MEMS devices. Therefore, we investigate the microscopic structural responses associated with both modes. <jats:italic>Operando</jats:italic> synchrotron x‐ray diffraction under pulsed electric fields applied perpendicular to the film surface was used to probe out‐of‐plane and in‐plane lattice evolution. Domain switching from (100) to (001) was accompanied by in‐plane lattice elongation and out‐of‐plane shrinkage due to substrate‐clamping. Time‐resolved measurements revealed out‐of‐plane lattice dynamics between domain orientations during pulse application. This study provides an operando correlation between ferroelastic domain switching and both out‐of‐plane and in‐plane lattice responses relevant to 33‐ and 31‐mode actuation in Si‐compatible multidomain Pb(Zr <jats:italic> <jats:sub>x</jats:sub> </jats:italic> Ti <jats:sub>1‐</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic> )O <jats:sub>3</jats:sub> films, providing key insights for optimizing the piezoelectric properties of clamped epitaxial films for MEMS applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cumulative‐Stress‐Resilient Microelectromechanical Switches for Extreme Environment Applications","authors":"So‐Young Lee, Min‐Sub Kim, Tae‐Soo Kim, Young‐Woo Jo, Yu‐Hyun Shim, Se‐Yoon Jung, Sung‐Ho Kim, Do‐Hoon Lim, Yong‐Bok Lee, Jun‐Bo Yoon","doi":"10.1002/aelm.70635","DOIUrl":"https://doi.org/10.1002/aelm.70635","url":null,"abstract":"Reliable electronics capable of operating under various and cumulative extreme environmental stressors remain a major challenge for space, nuclear, and defense systems. Here, we report a microelectromechanical systems (MEMS) switch that maintains reliable operation after cumulative exposure to radiation, extreme temperatures, and mechanical shock and vibration. A thermomechanically engineered suspended structure minimizes temperature‐induced deformation across a wide temperature range while maintaining mechanical stability under shock and vibration. Radiation‐tolerant structural and contact materials are selected based on their electrical, chemical, and mechanical stability under gamma and proton irradiation. The fabricated switch maintains functional electromechanical switching after sequential exposure to mechanical shock and vibration up to 2900 g and 2000 Hz, 1 Mrad gamma irradiation, temperatures from 4 to 450 K, and 100 MeV proton irradiation at a fluence of 10 <jats:sup>12</jats:sup> p/cm <jats:sup>2</jats:sup> . Following cumulative exposure, endurance testing across 16 devices yielded a median of 1.03 × 10 <jats:sup>6</jats:sup> cycles to the first loss of actuation, with individual devices operating for several million cycles.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Magnetically Programmable Metasurface for Versatile Scattering Manipulation in the Microwave Band","authors":"Lihao Zhu, Nan Zhao, Yao Lu, Zhe Zheng, Jiaqi Han, Lingyun Niu, Haixia Liu, Long Li","doi":"10.1002/aelm.70637","DOIUrl":"https://doi.org/10.1002/aelm.70637","url":null,"abstract":"Reconfigurable metasurfaces have shown powerful capabilities and flexibility for scattering control. Nevertheless, widely investigated electrically reconfigurable metasurfaces confront multiple challenges, such as the need for direct bias circuit connections, which greatly limit their practical applications. Herein, we propose a magnetically driven metasurface platform that consists of a magneto‐responsive electromagnetically reconfigurable metasurface and a magnetic generator, enabling near‐field magnetic generation and electromagnetic field modulation. Each metasurface element can be controlled by the surrounding magnetic field. A transition between the 0 and 1 scattering states occurs when the magnetic field fluctuates across the threshold. The designed element achieves a phase modulation of 180° ± 20° around 2.4 GHz, with the in‐band insertion loss below 1 dB. For experimental verification, a magnetic field generator (MFG) is utilized to produce a magnetic field surrounding the metasurface, facilitating non‐contact actuation and the precise control of each magneto‐responsive element. An 8 × 8 magnetically programmable metasurface array (MPMS) is produced. Under the modulation of the surrounding magnetic field, the MPMS can be independently coded. Using a customized external magnetic field configuration, we conduct experiments to validate the performance of the proposed magnetically driven programmable metasurface in RCS reduction and retroreflective beam control.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"94 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fractional Variational Framework for Systems With Higher‐Order Elements. Part I: Lagrangian Construction and Equations of Motion","authors":"Dalibor Biolek, Viera Biolková, Zdeněk Biolek, Ivo Petráš, Jiří Petržela","doi":"10.1002/aelm.70634","DOIUrl":"https://doi.org/10.1002/aelm.70634","url":null,"abstract":"This work presents a physics‐consistent methodology for constructing Lagrangians of electrical and electrochemical systems composed of higher‐order elements arranged according to Chua's periodic table. By extending Riewe's fractional‐order treatment of dissipation beyond classical resistive elements, the proposed framework enables the incorporation of both nonlinear dynamics and memory effects into a single variational formulation. Conditions are identified under which a Lagrangian can be constructed even in the presence of nonlinear and dissipative components. The approach is illustrated using a broad class of systems that are highly relevant to modern electronic and functional materials, including memristive devices, fractional elements, electrochemical interfaces, supercapacitors, lithium‐ion batteries, and biological tissues. These systems are characterized by nonlocal charge transport, fractional impedance behavior, and energy storage in distributed structures, which cannot be adequately described using conventional integer‐order models. By embedding fractional‐order elements into a variational framework, the proposed method provides a physically interpretable foundation for distinguishing energy storage from dissipation in complex material systems exhibiting memory and fractional dynamics. The results constitute a first step toward a Hamiltonian‐based energy analysis of advanced electronic materials with distributed parameters, opening new perspectives for predictive modeling of electrochemical energy storage devices and bio‐electronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low‐Dimensional Metal Halide‐Organic Interdigitated p/n Heterojunction Solar Cells Enabled by Thiomorpholine Hydroiodide Additive","authors":"Jiahao Zhang, Ben Fan, Qi Wang, Xiaopeng Xu, Yihui Wu, Qiang Peng","doi":"10.1002/aelm.70632","DOIUrl":"https://doi.org/10.1002/aelm.70632","url":null,"abstract":"Low‐dimensional metal halides are attractive p‐type absorbers for stable photovoltaics, yet constructing efficient interdigitated p/n heterojunctions is limited by poor phase control, high defects and interfacial losses. Herein, we report a synergistic molecular and topographical engineering strategy to address these challenges. Thiomorpholine hydroiodide (TMI) is introduced to regulate the crystallization kinetics and passivate defects of the two‐dimensional p‐type metal halide absorber. Through hydrogen‐bonding/electrostatic interactions and interaction‐induced electronic redistribution involving PbI <jats:sub>2</jats:sub> , TMI promotes preferred orientation, phase purity and reduced trap density. Consequently, TMI‐mediated optimization delivers progressive efficiency improvements across systematically advanced device structures. The efficiency has been raised from 20.99% to 22.14% in single p‐type metal halide devices, and from 22.44% to 23.45% in planar p/n heterojunctions upon integrating a ternary organic n‐layer. Crucially, utilizing the TMI‐optimized absorber as a template for high‐fidelity nanoimprinting to construct the target interdigitated p/n heterojunction yields a champion efficiency of 24.27%, which is the record value in low‐dimensional metal halide‐based solar cells so far. The optimized interdigitated device without encapsulation also retains 84% of its initial efficiency after 1000 h of continuous maximum power point tracking. This work provides a scalable pathway for high‐efficiency, stable structured photovoltaics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149359931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Negative Feedback in Hf 0.5 Zr 0.5 O 2 Resistive Memory: Feigenbaum Route Toward Two‐Terminal Pseudo‐Random Number Generation and Neural Network Instabilities","authors":"Sebastian Obernberger, Yoandris Gonzalez, Andranik Sarkissian, Christina Schindler, Andreas Ruediger","doi":"10.1002/aelm.70630","DOIUrl":"https://doi.org/10.1002/aelm.70630","url":null,"abstract":"Resistively switching metal‐insulator‐meal (MIM) structures are a strong contender for universal memory technologies and neuromorphic computing applications. Their ability to combine non‐volatility with analogue tuneability enables in‐memory computing, where both data processing and storage occur in the same physical location. A period‐doubling bifurcation was observed in endurance tests of TiN/ Hf <jats:sub>0.5</jats:sub> Zr <jats:sub>0.5</jats:sub> O <jats:sub>2</jats:sub> /Au devices, where sequences of voltage pulses with constant amplitudes are supplied to the stack. Based on this, the memory cell's response to increasingly larger voltage pulses is measured. The extracted parameters are used to deduce a probabilistic non‐linear map describing endurance cycling of the MIM system. The investigation of the dynamics involves the identification of parameters that have been reported to be subject to change during continuous switching, and the investigation of how this drift affects the switching dynamics. The found model thus serves as a design framework to either deliberately develop systems exhibiting chaotic dynamics or circumvent them for classical memory applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149359930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Living Electronics: Microbial Metabolism as Batteries, Resistors, and Capacitors","authors":"Botian Wang, Ruohan Zhang, Seokheun Choi","doi":"10.1002/aelm.70631","DOIUrl":"https://doi.org/10.1002/aelm.70631","url":null,"abstract":"Conventional electronics owe their reliability to materials engineered to ignore their surroundings; living systems owe their resilience to materials that respond to them. Here we integrate three biohybrid circuit elements on paper, assigning distinct microbial species to energy generation, light‐responsive charge transport, and electrochemical charge storage. A biobattery switches on only when dormant <jats:italic>Bacillus subtilis</jats:italic> spores are fed and germinate; a bioresistor's value is set by the color and intensity of light striking a photosynthetic <jats:italic>Synechocystis</jats:italic> biofilm; and a biocapacitor stores charge in the redox chemistry of respiring <jats:italic>Shewanella oneidensis</jats:italic> . Co‐printed on a single sheet of paper, they form an environment‐responsive living circuit—battery, resistor, and capacitor—governed by biological activity rather than fixed material constants. Germination raises the biobattery's peak power more than 30‐fold; colored light sweeps the resistance from 96.7 to 6.4 kΩ; and electrode spacing tunes a 0.762–2.173 mF charge store—so that light, acting through living matter alone, programs how fast the circuit charges. Remarkably, this circuit of cells charges reproducibly under designable RC rules, recasting a photosynthetic action spectrum as an engineering transfer function. The result is a printable, disposable route to electronics powered, regulated, and stored by life itself.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149359932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Single Volatile VO 2 Memristor Enabling Neuromorphic Perception, Learning, and Computing","authors":"Bingkai Ding, Bohao Ding, Omesh Kapur, Yisong Han, Richard Beanland, Kai Sun, C. H. (Kees) de Groot, Ruomeng Huang","doi":"10.1002/aelm.70628","DOIUrl":"https://doi.org/10.1002/aelm.70628","url":null,"abstract":"Neuromorphic computing requires compact hardware devices capable of supporting multiple brain‐inspired functions. Vanadium dioxide (VO <jats:sub>2</jats:sub> ), with its thermally and electrically driven insulator–metal transition (IMT), offers an attractive materials platform for such applications owing to its intrinsic volatility and fast switching dynamics. Here, we demonstrate a vertical Pt/VO <jats:sub>2</jats:sub> /Pt memristor that integrates multiple neuromorphic functions within a single volatile device platform. VO <jats:sub>2</jats:sub> thin films are deposited by atomic layer deposition (ALD) using the TEMAV precursor, yielding semiconducting insulating and metallic phases with a resistivity contrast of approximately two orders of magnitude. Electrical transport analysis indicates that back‐to‐back Schottky barriers at the Pt/VO <jats:sub>2</jats:sub> interfaces play a dominant role in device conduction and enable reproducible volatile threshold switching. Leveraging the interfacial transport and thermally driven switching dynamics, the same device emulates leakyintegrate‐and‐fire neuronal behavior, Pavlovian‐like associative conditioning, reservoir‐computing‐based temporal signal recognition, and artificial nociceptor responses. In particular, the device‐driven reservoir system is applied to electrocardiogram heartbeat classification, demonstrating its capability for processing real physiological temporal signals. These results establish ALD‐grown vertical VO <jats:sub>2</jats:sub> memristors as compact and multifunctional building blocks for neuromorphic and sensory hardware, highlighting a route toward single‐device platforms that couple perception, learning, and temporal information processing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149292715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}