Advanced Electronic Materials最新文献

Multi-Channel, Amorphous Oxide Thin-Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability 多通道非晶氧化物薄膜晶体管具有 67 cm2 V-1 s-1 的高迁移率和出色的稳定性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-30 DOI: 10.1002/aelm.202400766

Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang

{"title":"Multi-Channel, Amorphous Oxide Thin-Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability","authors":"Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang","doi":"10.1002/aelm.202400766","DOIUrl":"https://doi.org/10.1002/aelm.202400766","url":null,"abstract":"Multi-channel amorphous oxide thin-film transistors (TFTs) with dual gate (DG), coplanar structure are studied. The multi-channel consists of a top amorphous indium gallium zinc tin oxide (a-IGZTO) and a very thin amorphous indium zinc oxide (a-IZO) bottom layer. The fabricated TFTs exhibit high field-effect mobility (µFE) ≈67.1 cm2 V−1 s−1, and excellent stability under positive bias temperature stress (PBTS). The band diagram of the multi-channel TFT is presented based on UV photoelectron spectroscopy, X-ray photoelectron spectroscopy, and UV–vis spectroscopy measurements. The PBTS robustness is interpreted as the formation of 2D electron gas (2DEG) at the a-IGZTO/a-IZO hetero-interface which extends to the bulk a-IZO layer. From thermalization energy (ETh) analysis with the energy barrier to defect formation under PBTS, the multi-channel TFT exhibits the largest ETh of 0.84 eV, which indicates that more stress energy is needed for threshold voltage shift during PBTS in the TFTs as compared to single-channel TFTs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"73 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward an Internet of Things Circular Economy Using Printed Circuits on Reusable Steel Substrates

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-30 DOI: 10.1002/aelm.202400529

Jeff Kettle, Rudra Mukherjee, Shoushou Zhang, Tianwei Zhang, Jonathan Harwell, Andrew Bainbridge, Mahmoud Wagih, Ana Martinez Diez, MariFe Menendez Suarez, Pascal Sanchez

{"title":"Toward an Internet of Things Circular Economy Using Printed Circuits on Reusable Steel Substrates","authors":"Jeff Kettle, Rudra Mukherjee, Shoushou Zhang, Tianwei Zhang, Jonathan Harwell, Andrew Bainbridge, Mahmoud Wagih, Ana Martinez Diez, MariFe Menendez Suarez, Pascal Sanchez","doi":"10.1002/aelm.202400529","DOIUrl":"https://doi.org/10.1002/aelm.202400529","url":null,"abstract":"There is a pressing need to reduce electronic waste, which along with government edicts and national time-bound policy directives are shaping the drive toward circular economy solutions in electronics. However, there is no industrially standardized approach for fabricating high-throughput recyclable and reusable electronic assemblies. Herein, we present the functionalization of steel over large areas with low-cost insulative intermediate layers as Printed Circuit Boards (PCBs), enabling an electronics circular economy. Roll-to-roll-friendly reusable steel substrates are coated using Sol–gel-based low-roughness insulative layers, with conductive tracks and solder pads additively manufactured with direct-write printing. To demonstrate how degradable 3D scaffolds could enable wireless applications, RF components, and wi-fi nodes are demonstrated with 3D-printed antennas showing the feasibility of broadband Internet of Things applications up to 6 GHz. At their end-of-life, the steel-based PCBs are sonicated in non-hazardous solvents allowing for the rapid recovery of components and precious metals. The environmental benefits of our approach are discussed using Life Cycle Assessments (LCA) and a comparative LCA between these scenarios has been undertaken. Consideration of the final product cost is given and potential business models to enter the electronics market are identified.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Al/Ti Electrodes on the Performance and Operational Stability of n-Channel Solution-Processed Solid-State Electrolyte-Gated Transistors: Applications in Reservoir Computing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-30 DOI: 10.1002/aelm.202500038

Quanhua Chen, Xiang Wan, Walid Boukhili, Jie Yan, Hong Zhu, Lijian Chen, Chee Leong Tan, Zhihao Yu, Huabin Sun, Yong Xu, Dongyoon Khim

{"title":"Impact of Al/Ti Electrodes on the Performance and Operational Stability of n-Channel Solution-Processed Solid-State Electrolyte-Gated Transistors: Applications in Reservoir Computing","authors":"Quanhua Chen, Xiang Wan, Walid Boukhili, Jie Yan, Hong Zhu, Lijian Chen, Chee Leong Tan, Zhihao Yu, Huabin Sun, Yong Xu, Dongyoon Khim","doi":"10.1002/aelm.202500038","DOIUrl":"https://doi.org/10.1002/aelm.202500038","url":null,"abstract":"The impact of Al/Ti electrodes on enhancing the performance and operational stability of n-channel organic electrolyte-gated transistors (OEGTs) is investigated. Utilizing Al/Ti electrodes as source and drain electrodes in diketopyrrolopyrrole (DPP)-based polymeric semiconductor OEGTs leads to a significant decrease in the charge injection barrier for electrons, resulting in improvement of all electrical parameters including on-current, mobility, on-off ratio, and threshold voltages. Furthermore, through a comparative analysis of transistors utilizing polymer insulators and solid electrolytes as gate dielectrics, the effect of alterations in the electrodes on the contact resistance of each device is examined. In comparison to OEGTs with Au electrodes, OEGTs with Al/Ti electrodes demonstrate higher operational stability following multiple cycling tests. Finally, the OEGTs produced in this study demonstrate reliable short-term memory characteristics, which are subsequently utilized for reservoir computing, achieving a high recognition accuracy of 94% for spoken digits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"36 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri-Layer Elastomer Dielectric for Gas Sensing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-30 DOI: 10.1002/aelm.202400981

Xiaoying Zhang, Xiangxiang Li, Weiyu Wang, Hongchen Jiang, Xinran Zheng, Huiqi Yang, Xin Ye, Hui Yang

引用次数: 0

Advances of Carbon Nanotube Based Flexible Amplifiers for Skin-Mounted Physiological Signal Monitoring

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-28 DOI: 10.1002/aelm.202400991

Haitao Zhang, Yulong Yuan, Jian Hu, Li Xiang

{"title":"Advances of Carbon Nanotube Based Flexible Amplifiers for Skin-Mounted Physiological Signal Monitoring","authors":"Haitao Zhang, Yulong Yuan, Jian Hu, Li Xiang","doi":"10.1002/aelm.202400991","DOIUrl":"https://doi.org/10.1002/aelm.202400991","url":null,"abstract":"Epidermal amplifiers, integral to noninvasive bio-signal monitoring that are in close proximity to the site of interest, have emerged as critical components in the evolution of wearable healthcare and diagnostics. Among various semiconducting materials, carbon nanotubes (CNTs) become one of the most promising candidates due to its great electronic properties. This review provides an overview of the recent developments in flexible amplifiers based on CNTs from the following aspects. The manufacturing strategies for CNT thin-film transistors (TFTs) are first discussed that preserve device integrity and performance from rigid to flexible platforms. The subsequent content concludes the recent development in CNT TFTs, including film deposition processes, high-k dielectric materials, and scaling behaviors, which are pivotal for enhancing the performance of flexible systems. The review further details various circuit topologies, from inverter-based to differential amplifiers, each offering unique advantages in gain, noise rejection, and bandwidth. Successful CNT-based amplifier implementations for physiological signal monitoring are highlighted, emphasizing their impact on wearable electronics. Finally, it discusses the challenges and future prospects of CNT-based flexible amplifiers, charting a course for the next generation of flexible electronics in personal health monitoring.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Thermoelectric Performance of Cd₃P₂ by Alloying with Dirac Material Cd₃As₂

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-27 DOI: 10.1002/aelm.202500034

Kunling Peng, Chenjian Fu, Yunzhen Du, Sikang Zheng, Meng Tian, Pengfei Gao, Jianjun Ying, Wenbin Yi, Xu Lu, Sheng Zhang, Guoyu Wang, Xiaoyuan Zhou

{"title":"Enhancing Thermoelectric Performance of Cd₃P₂ by Alloying with Dirac Material Cd₃As₂","authors":"Kunling Peng, Chenjian Fu, Yunzhen Du, Sikang Zheng, Meng Tian, Pengfei Gao, Jianjun Ying, Wenbin Yi, Xu Lu, Sheng Zhang, Guoyu Wang, Xiaoyuan Zhou","doi":"10.1002/aelm.202500034","DOIUrl":"https://doi.org/10.1002/aelm.202500034","url":null,"abstract":"This study systematically explores the electrical and thermal properties of Cd₃P₂ by alloying it with the Dirac material Cd₃As₂, employing a combined experimental and theoretical approach. The findings demonstrate three distinct characteristics of this solid solution system: i) The continuous solid solution formation between Cd₃P₂ and Cd₃As₂ enables the tuning of the band structure. ii) Increasing As content leads to a reduction in effective mass, decreased deformation potential, and a substantial enhancement in carrier mobility. iii) The system exhibits phosphorus vacancy generation, which creates donor levels within the band gap and consequently impacts thermoelectric performance. Specifically, an ultrahigh mobility exceeding 7 × 103 cm2 V−1 s−1 is achieved in Cd₃PAs. This substantial improvement in mobility across the entire temperature range resulted in a twofold increase in the power factor and a marked enhancement in thermoelectric performance, particularly in the low-temperature region. These results provide foundational insights into the thermoelectric behavior governed by the interplay between the semiconductor Cd₃P₂ and the Dirac material Cd₃As₂, establishing a framework for further research and performance optimization of this solid solution system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"152 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrically-Driven Metal-Insulator Transitions Emerging from Localizing Current Density and Temperature

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-27 DOI: 10.1002/aelm.202400975

Adelaide Bradicich, Yeonju Yu, Timothy D. Brown, Fatme Jardali, Suhas Kumar, R. Stanley Williams, Patrick J. Shamberger

{"title":"Electrically-Driven Metal-Insulator Transitions Emerging from Localizing Current Density and Temperature","authors":"Adelaide Bradicich, Yeonju Yu, Timothy D. Brown, Fatme Jardali, Suhas Kumar, R. Stanley Williams, Patrick J. Shamberger","doi":"10.1002/aelm.202400975","DOIUrl":"https://doi.org/10.1002/aelm.202400975","url":null,"abstract":"Negative differential resistance (NDR) is a key electronic response enabling two-terminal artificial neurons that can be achieved through different physical phenomena, including phase-homogeneous current density and temperature (electro-thermal) localizations and spatially-localized metal-insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically-biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase-homogeneous electro-thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO2. These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically-induced electro-thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically-biased MIT materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Transparent, Conductive, and Mechanically Robust Hydrogels via Rapid In Situ Synthesis for Flexible Electronics

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-26 DOI: 10.1002/aelm.202400987

W. Yuan, J. Zhao

{"title":"Highly Transparent, Conductive, and Mechanically Robust Hydrogels via Rapid In Situ Synthesis for Flexible Electronics","authors":"W. Yuan, J. Zhao","doi":"10.1002/aelm.202400987","DOIUrl":"https://doi.org/10.1002/aelm.202400987","url":null,"abstract":"Hydrogels face challenges as flexible electronic materials, including complex preparation processes and difficulty in balancing frost resistance, water retention, and mechanical properties. Here, a cost-effective and efficient strategy for in situ rapid synthesis of hydrogels with Mo2C-derived molybdenum polyoxometalates (POM) is developed. The Mo-POM/ammonium persulfate (APS) redox pair enables rapid initiation of in situ free radical polymerization at room temperature, effectively addressing the limitations associated with conventional photo- or thermally-initiated methods. The tunable redox activity of Mo-POM allows precise control of polymerization time. This synthesis strategy utilizes the “freezing effect” achieved through rapid polymerization to achieve a uniform distribution of hydrogel components. Additionally, the incorporation of Mo-POM and sodium alginate (SA) introduces diverse intermolecular interactions within the hydrogel network, significantly enhancing mechanical properties. LiCl incorporation provides exceptional frost resistance, water retention, durability, and stability even under prolonged load cycling. Furthermore, the hydrogel demonstrates outstanding electromechanical properties, reliably and rapidly responding to both large and subtle motions. This tunable synthesis strategy successfully balances mechanical and electromechanical performance, antifreeze capability, water retention, and durability. Consequently, it offers a promising approach for large-scale, cost-effective industrial production of high-performance hydrogels.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Single-Stage Differential Amplifier Using Organic Electrochemical Transistors

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-26 DOI: 10.1002/aelm.202400755

Farnaz Fahimi Hanzaee, Ivan B. Dimov, Luke W. Gatecliff, Richard H. Bayford, George G. Malliaras, Andreas Demosthenous, Nick de N. Donaldson

{"title":"A Single-Stage Differential Amplifier Using Organic Electrochemical Transistors","authors":"Farnaz Fahimi Hanzaee, Ivan B. Dimov, Luke W. Gatecliff, Richard H. Bayford, George G. Malliaras, Andreas Demosthenous, Nick de N. Donaldson","doi":"10.1002/aelm.202400755","DOIUrl":"https://doi.org/10.1002/aelm.202400755","url":null,"abstract":"Organic electrochemical transistors (OECTs) are attractive devices, particularly for biomedical applications. The inherent quality of OECTs in amplifying signals, combined with the possibility of directly interfacing with biological tissue, make them unique candidates to replace recording electrodes with the added advantage of providing on-site amplification (and thus allowing them to be counted as active electrodes). While most amplifiers using OECTs are transconductance amplifiers, having voltage-to-voltage amplification is more desirable in many applications to make the output compatible with any downstream conditioning circuit. Differential recording of physiological signals has the benefit of rejecting the common-mode noise sourcing from the environment or the body itself while amplifying the desired signal. Here the considerations for and challenges of designing an OECT-based differential amplifier are discussed and a three-transistor amplifier is proposed that can provide a common-mode rejection ratio of up to ≈20 dB. To demonstrate its advantage, a differential amplifier is used to record ECG signals from a human volunteer, and the collected data is compared with recordings from a Wheatstone bridge OECT amplifier, showing the improved signal-to-noise ratio, gain, and power consumption.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge Injection and Transport in an Isoindigo-Based Polymer Transistor 异靛蓝基聚合物晶体管中的电荷注入和传输

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-25 DOI: 10.1002/aelm.202500098

Zuchong Yang, Daniele Zucchelli, Melissa Berteau-Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu

{"title":"Charge Injection and Transport in an Isoindigo-Based Polymer Transistor","authors":"Zuchong Yang, Daniele Zucchelli, Melissa Berteau-Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu","doi":"10.1002/aelm.202500098","DOIUrl":"https://doi.org/10.1002/aelm.202500098","url":null,"abstract":"Polymer semiconductors hold great potential as active materials in (opto)electronic, thermoelectric, and biomedical devices. Their charge transport performance has seen tremendous progress, with mobilities exceeding 1 cm2 V−1 s−1 for a variety of donor-acceptor copolymers. Nevertheless, charge injection at the metal/polymer interface is still rather ineffective and poorly understood. In a field-effect transistor, this process is manifested by the contact resistance (Rc) which, for polymers, is several orders of magnitude higher than for their inorganic counterparts. Therefore, an in-depth investigation of the charge injection in metal/donor-acceptor polymer systems is sought-after. Here, the low-temperature dependent Rc and charge transport of a model isoindigo donor-acceptor copolymer-based transistor are studied. The metal/polymer interface is tuned by functionalizing the electrodes with different thiolated self-assembled monolayers (SAMs). Rc in devices with SAM-functionalized electrodes is generally lower and exhibited a weak temperature dependence. Counterintuitively, electrodes functionalized with SAMs expected to lead to an apparently unfavorable energy level alignment displayed the lowest Rc. The Fermi level is found to be pinned at all the encompassed interfaces. An energy-level alignment modeling is employed to understand this behavior. The findings reveal that simply looking at the energy levels alignment of metal/polymer interface does not necessarily lead to reduced Rc.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143695080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0