Advanced Electronic Materials最新文献

Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects (Adv. Electron. Mater. 17/2025) 植物电子纳米材料的研究进展与展望[j]。板牙。17/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70120

Ciro Allará, Giuseppe Ciccone, Manuela Ciocca, Sahira Vasquez, Pietro Ibba, Mauro Maver, Tanja Mimmo, Paolo Lugli, Luisa Petti

引用次数: 0

Inkjet Printable Semiconducting Inks for Enhancement-Mode Organic Electrochemical Transistors (Adv. Electron. Mater. 17/2025) 用于增强型有机电化学晶体管的可喷墨印刷半导体油墨。板牙。17/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70122

Alan Eduardo Avila Ramirez, Shofarul Wustoni, Yizhou Zhong, Abdulelah Saleh, Prem D. Nayak, Jokubas Surgailis, Tania Cecilia Hidalgo Castillo, Sahika Inal

引用次数: 0

Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces (Adv. Electron. Mater. 17/2025) 用于生物光子应用的共轭聚合物纳米粒子：制备、表征和在生物杂化界面中的模拟(Adv.电子。板牙。17/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70123

Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca

引用次数: 0

Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films (Adv. Electron. Mater. 17/2025) 电化学掺杂用于P（NDI2OD-T2）薄膜的吸收和电导率调谐。板牙。17/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70124

David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs

引用次数: 0

Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments? (Adv. Electron. Mater. 17/2025) PM6:Y6体异质结光活性膜在生物环境中是否具有细胞相容性和电稳定性？放置电子。板牙。17/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-21 DOI: 10.1002/aelm.70121

Mathias Polz, Konrad Binter, Kaila M. Yallum, Thomas Rath, Marta Nowakowska-Desplantes, Christa Schimpel, Gerhard Sommer, Nassim Ghaffari-Tabrizi-Wizsy, Natalie Banerji, Gregor Trimmel, Theresa Rienmüller

引用次数: 0

Vacuum Thermal Evaporation for OLEDs: Fundamentals, Optimization, and Implications for Perovskite LEDs 有机发光二极管的真空热蒸发：基本原理、优化和钙钛矿led的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500555

Chenxi Shen, Ying Hu, Siqian Zhou, Ziquan He, Junchao Han, Daquan Zhang, Lei Lu, Xiaoliang Mo, Qianpeng Zhang

{"title":"Vacuum Thermal Evaporation for OLEDs: Fundamentals, Optimization, and Implications for Perovskite LEDs","authors":"Chenxi Shen, Ying Hu, Siqian Zhou, Ziquan He, Junchao Han, Daquan Zhang, Lei Lu, Xiaoliang Mo, Qianpeng Zhang","doi":"10.1002/aelm.202500555","DOIUrl":"https://doi.org/10.1002/aelm.202500555","url":null,"abstract":"Organic light‐emitting diodes (OLEDs) are central to high‐end displays and solid‐state lighting due to their small thickness and high flexibility, wide color gamut, and low power consumption. While solution processing offers simplicity and cost advantages for polymer‐based OLEDs, vacuum thermal evaporation (VTE) remains the dominant method for the commercial production of high‐performance small‐molecule OLEDs, owing to its precise control over film thickness, material purity, and multilayer integration. However, to meet the demands of display applications for higher performance, lower cost and more diverse forms (such as flexibility and high resolution), it is crucial to continuously optimize the VTE process. Meanwhile, although solution processing remains the predominant approach for perovskite light‐emitting diodes (PeLEDs), recent exploratory efforts have investigated VTE as an alternative route, thereby opening opportunities to transfer process insights from OLEDs to PeLEDs. This review aims to systematically summarize the application foundation and optimization strategies of VTE technology in OLEDs, and to explore how these mature practices can inform the process development and device design of vacuum‐evaporated PeLEDs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors 真空退火缺陷工程：高性能铟硒光电探测器的精确硒空位控制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500436

Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao

{"title":"Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors","authors":"Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao","doi":"10.1002/aelm.202500436","DOIUrl":"https://doi.org/10.1002/aelm.202500436","url":null,"abstract":"Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in InSe is hindered by the complex interplay between defect evolution and phase transitions. In this work, a low‐temperature, high‐vacuum annealing strategy is introduced that allows for fine‐tuned regulation of selenium vacancies, enabling significant optoelectronic improvements while suppressing unwanted phase transitions. By performing measurements on InSe optoelectronic devices throughout the vacuum annealing process, it is demonstrated that vacuum annealing can serve as an n‐type doping, coupled with the enhancement of mobility (from 1.2 to 276 cm2 V−1 s−1) and photoresponsivity (from 1000 to 2.3 × 104 A W−1). Through thermodynamic hypothesis and semi‐quantitative X‐ray photoelectron spectroscopy (XPS) results, a direct correlation is established between these performance improvements and the controlled increase of Se vacancy concentration (from ≈2% to ≈7%). Based on this, a band diagram model is proposed to explain the change of charge transport and photocurrent generation processes in InSe devices. This work establishes defect engineering as a critical standalone parameter for optimizing InSe device performance, offering both theoretical insights and practical guidelines for the fabrication of high‐performance InSe functional devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

46‐Channel Image Encryption Based on Optically Controlled Metasurfaces 基于光控超表面的46通道图像加密

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500533

Yufei Liu, Guibin Li, Zehao He, Xinke Wang, Yan Zhang

{"title":"46‐Channel Image Encryption Based on Optically Controlled Metasurfaces","authors":"Yufei Liu, Guibin Li, Zehao He, Xinke Wang, Yan Zhang","doi":"10.1002/aelm.202500533","DOIUrl":"https://doi.org/10.1002/aelm.202500533","url":null,"abstract":"With the rapid growth of data volumes in modern society, efficient and secure methods for information transmission, storage, and encryption have become essential. Benefiting from high‐density storage and fast access to 2D data, optical encryption shows significant promise for data protection. Metasurfaces, as a type of 2D artificial metamaterials capable of precisely controlling electromagnetic waves, have greatly advanced the development of multi‐channel optical encryption. However, many existing metasurface‐based optical encryption devices are limited by static operation and stringent requirements on materials or light sources. Here, a 46‐channel image encryption device is proposed, integrated with optically controlled metasurfaces to achieve dynamically tunable and high‐capacity optical encryption. An efficient binary amplitude‐phase inverse‐design method is developed that enables high performance optical encryption by incorporating binary amplitude distributions into an isotropic phase metasurface. This approach imposes minimal additional requirements on the light source or the metasurface. Experimental demonstrations using an infrared‐pump/terahertz‐probe imaging system confirm the effectiveness and robustness of the encryption device, highlighting its potential for advanced and flexible optical encryption applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors 高性能超宽带隙CaSnO3金属氧化物半导体场效应晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-16 DOI: 10.1002/aelm.202500459

Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, Gang Qiu

{"title":"High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors","authors":"Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, Gang Qiu","doi":"10.1002/aelm.202500459","DOIUrl":"https://doi.org/10.1002/aelm.202500459","url":null,"abstract":"The increasing demand for high‐voltage and high‐power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room‐temperature electron mobilities among all perovskite oxides. Among this family, Calcium stannate (CaSnO3) has the largest band gap of ≈4.7 eV, holding great promise for high‐power applications. However, the demonstration of CaSnO3 power electronic devices is so far limited. In this work, high‐performance metal‐oxide‐semiconductor field‐effect transistor (MOSFET) devices based on lanthanum (La)‐doped CaSnO3 are demonstrated for the first time. The MOSFETs exhibit an on/off ratio exceeding 108, along with field‐effect mobility of 8.4 cm2 V−1 s−1 and on‐state current of 30 mA mm−1. The high performance of the CaSnO3 MOSFET devices can be ascribed to the excellent metal‐to‐semiconductor contact resistance of 0.73 kΩ·µm. The devices also show great potential for harsh environment operations, as high‐temperature operations up to 400 K are demonstrated. An off‐state breakdown voltage of 1660 V is achieved, with a breakdown field of ∼8.3 MV cm−1 among the highest reported for all UWB semiconductors. This work represents significant progress toward realizing the practical application of CaSnO3 in future high‐voltage power electronic technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Current Developments and Challenges in the Field of Biohybrid Neural Interfaces—A Scoping Review 生物杂化神经接口领域的现状与挑战——综述

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-15 DOI: 10.1002/aelm.202500259

Yi-Lin Yu, Jameel Muzaffar, Veronica Philips, Yun-Ju Yang, Damiano Giuseppe Barone, George G. Malliaras, Manohar Bance

{"title":"Current Developments and Challenges in the Field of Biohybrid Neural Interfaces—A Scoping Review","authors":"Yi-Lin Yu, Jameel Muzaffar, Veronica Philips, Yun-Ju Yang, Damiano Giuseppe Barone, George G. Malliaras, Manohar Bance","doi":"10.1002/aelm.202500259","DOIUrl":"https://doi.org/10.1002/aelm.202500259","url":null,"abstract":"Biohybrid neural interfaces (BNIs) will be pivotal for the future of advancing neuroprosthetics and neuromodulation technologies, though they have not yet been widely adopted into routine practice. This scoping review aims to consolidate recent advancements, identify ongoing challenges, and examine methodologies in biohybrid neural interfaces to highlight knowledge gaps and inform future research. Following the Preferred Reporting Items for Systematic Reviews and Meta-Analyses Extension for Scoping Reviews (PRISMA-ScR) framework, electronic literature searches of Medline/Embase, IEEE Xplore, Scopus, Web of Science, and the Cochrane Library, covering studies from 2000 onwards, focus on peer reviewed articles in English. A total of 25 articles are included in this scoping review, comprising 15 primary research studies, 7 review articles, and 3 related reports. These studies explore the integration of living cells, induced pluripotent stem cells (iPSCs), neurotrophic factors, hydrogels, and conductive polymers to enhance neural function and biocompatibility. Despite encouraging advances, challenges such as immune response, device durability, and signal fidelity remain critical barriers to clinical translation. Despite advancements, the field faces challenges that require further research. Future efforts should focus on refining bioactive coatings, advancing biohybrid designs, and developing next-generation neural recording systems to improve long-term integration and performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0