Advanced Electronic Materials最新文献

Crack-Controlled Stretchable Gold Conductive Electrode through One-Step Carbon Nanotube Spray Deposition (Adv. Electron. Mater. 9/2025) 碳纳米管一步喷涂沉积制备裂纹控制可拉伸金导电电极。板牙。9/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-17 DOI: 10.1002/aelm.70002

Masashi Miyakawa, Hiroshi Tsuji, Mitsuru Nakata

引用次数: 0

Observation of 1/f4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control 有机双层双极性场效应管中1/f4噪声的观察及缺陷工程方法的提出

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-13 DOI: 10.1002/aelm.202400858

Youngmin Han, Jaechan Song, Ryun‐Han Koo, Hocheon Yoo, Wonjun Shin

{"title":"Observation of 1/f4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control","authors":"Youngmin Han, Jaechan Song, Ryun‐Han Koo, Hocheon Yoo, Wonjun Shin","doi":"10.1002/aelm.202400858","DOIUrl":"https://doi.org/10.1002/aelm.202400858","url":null,"abstract":"The omnipresence of low‐frequency noise (LFN) within semiconductor materials and devices poses a substantial concern for the reliability of integrated circuits (ICs). Consequently, considerable research endeavors are directed toward characterizing LFN across various types of field‐effect transistors (FETs), pivotal components in IC. Here, the LFN characteristics of bilayer ambipolar FETs based on organic semiconductors are investigated, / uri / We report that interface defects at the n/p junctions engender a correlation between trapping/detrapping noise and generation/recombination noise, resulting in a 1/f 4 noise. The elucidation of this distinctive noise behavior is conducted through comprehensive and comparative studies on LFN of single n‐ and p‐channel FETs. Furthermore, a novel approach is proposed to control excess noise in bilayer ambipolar FETs by inserting a thin insulator layer (parylene) between the n/p junction. This yields a notable reduction in noise amplitude, concurrently leading to the dissolution of 1/f 4 noise into 1/f 3 and 1/f 2 components. This study not only furnishes the inaugural report of the underlying mechanism behind the unique 1/f 4 noise but also presents a pragmatic strategy for its control, thereby opening a new horizon for LFN studies on organic‐based FETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144288500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid Plasmonic Nanorods/VO2 Photodetectors Sensitive to Short‐Wave Infrared Photons with Fast Response 快速响应短波红外光子的等离子体纳米棒/VO2混合光电探测器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-13 DOI: 10.1002/aelm.202500172

Zhuoqun Fang, Alexandre Zimmers, Ke Li, Dongjiu Zhang, Tianyu Lan, Baoquan Sun, Laurent Billot, Lionel Aigouy, Zhuoying Chen

{"title":"Hybrid Plasmonic Nanorods/VO2 Photodetectors Sensitive to Short‐Wave Infrared Photons with Fast Response","authors":"Zhuoqun Fang, Alexandre Zimmers, Ke Li, Dongjiu Zhang, Tianyu Lan, Baoquan Sun, Laurent Billot, Lionel Aigouy, Zhuoying Chen","doi":"10.1002/aelm.202500172","DOIUrl":"https://doi.org/10.1002/aelm.202500172","url":null,"abstract":"Thermal detectors, such as bolometers functioning by detecting the radiation‐induced temperature changes, represent a promising route to achieve infrared detection and imaging. In this context, vanadium dioxide (VO2), a narrow bandgap (Eg) semiconductor (Eg ≈0.6–0.7 eV) with a unique near‐room‐temperature reversible metal‐to‐insulator transition (MIT), has emerged as one of the key materials for uncooled bolometer‐type short‐wave infrared (SWIR) photodetectors. In this work, photodetectors sensitive to the SWIR spectrum are fabricated to function at room‐temperature by coupling solution‐processed tungsten (W6+)‐doped VO2 thin films to colloidal plasmonic gold (Au) nanorods (NRs). Due to the dual beneficial roles of the NRs as both the photothermal heating and plasmonic antenna effects, the hybrid Au NR/VO2 devices exhibit significant advantages in terms of photosensitivity and detection range in comparison to the control devices without plasmonics. Together with the low external DC bias required (0.5 V) and the fast response speed (trise down to 14 ms), the present hybrid plasmonic‐VO2 thin film devices suggest a viable approach toward the development of future cost‐effective SWIR photodetectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144288499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dipole Engineering in Charge Generation Interface for Fully Solution-Processed and PEDOT:PSS-Free Tandem Quantum-Dot Light-Emitting Diodes 全溶液处理和无pss串联量子点发光二极管电荷生成接口的偶极子工程

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-11 DOI: 10.1002/aelm.202500180

Shu-Guang Meng, Ye Wang, Jin-Zhe Xu, Wei-Zhi Liu, Wan-Shan Shen, Dong-Ying Zhou, Liang-Sheng Liao

{"title":"Dipole Engineering in Charge Generation Interface for Fully Solution-Processed and PEDOT:PSS-Free Tandem Quantum-Dot Light-Emitting Diodes","authors":"Shu-Guang Meng, Ye Wang, Jin-Zhe Xu, Wei-Zhi Liu, Wan-Shan Shen, Dong-Ying Zhou, Liang-Sheng Liao","doi":"10.1002/aelm.202500180","DOIUrl":"https://doi.org/10.1002/aelm.202500180","url":null,"abstract":"Tandem quantum-dot light-emitting diodes (QLEDs) have attracted considerable attention in optoelectronics due to their potential for high efficiency and stability in display applications. A critical component in these devices is the charge-generating layer (CGL), which commonly employs PEDOT:PSS for its hole injection properties and compatibility with solution processing, despite limitations related to acidity and orthogonal solubility. Phosphomolybdic acid (PMA) has emerged as a promising alternative, but its practical application is hindered by inherent oxidation and low work function. In this work, a dipole-engineered CGL is reported by chemically anchoring ammonium acetate (AMA) layers at the charge generation interface between PMA and the hole-transporting layer. AMA incorporation effectively suppresses PMA oxidation, enhances work function, and improves energy-level alignment, which favors efficient charge separation within the CGLs. Furthermore, the AMA-coated PMA surface exhibits strong resistance to solvent damage during subsequent solution processing. As a result, fully solution-processed tandem QLEDs with AMA-modified CGLs achieve a 200% improvement in electroluminescent efficiency compared to single-emissive-layer devices. This substantial efficiency improvement highlights the potential of dipole engineering in CGL design and offers valuable insights for developing high-efficiency optoelectronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144269293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliably In-Memory Ternary Stateful Logic Computing Based on Tri-State Memristors with High On/Off Ratio 基于高开关比三态忆阻器的可靠内存三态逻辑计算

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-11 DOI: 10.1002/aelm.202500221

Junqi You, Yihong Hu, Dongliang Yang, Yinan Lin, Weifan Meng, Nuo Xu, Linfeng Sun

{"title":"Reliably In-Memory Ternary Stateful Logic Computing Based on Tri-State Memristors with High On/Off Ratio","authors":"Junqi You, Yihong Hu, Dongliang Yang, Yinan Lin, Weifan Meng, Nuo Xu, Linfeng Sun","doi":"10.1002/aelm.202500221","DOIUrl":"https://doi.org/10.1002/aelm.202500221","url":null,"abstract":"To surpass the slowdown of Moore's Law, multi-valued logic (MVL) systems are explored to increase information processing density and enhance computational efficiency. Although conventional MVL systems offer substantial reductions in the number of devices and the circuit complexity, they still suffer the memory/power wall derived from the von Neumann architecture. Memristors have the potential to construct stateful logic circuits with in-memory computing abilities which would further improve the computing efficiency by addressing the issues. In this paper, a tri-state memristor based on the Ag/Al2O3/Ta2O5/Pt structure is introduced to in-memory ternary stateful logic circuits. The stepped I–V behavior and device characteristics (a two-order-of-magnitude on/off ratio between adjacent resistance states with endurance up to 104) ensure the experimental implementations of the ternary logic gates of three kinds of NOT, NAND, and NOR in the same circuit structure, which can be further extended to other 116 ternary logic gates. In addition, after settling the crosstalk issues, a decoder function is experimentally demonstrated by cascading ternary NOT gates and NOR gate to exhibit the in-memory cascading characteristic of the proposed stateful logic circuits. This technology rooted in in-memory computing and MVL systems offers more efficient solutions for future computer information processing endeavors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"222 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144269292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self‐Powered AlGaN/GaN Photovoltaic‐Integrated UV Photodetector: Rapid Response with Persistent Photoconductivity Suppression 自供电AlGaN/GaN光伏集成紫外探测器：具有持续光电导率抑制的快速响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-09 DOI: 10.1002/aelm.202500216

Yuhan Pu, Yung C. Liang

{"title":"Self‐Powered AlGaN/GaN Photovoltaic‐Integrated UV Photodetector: Rapid Response with Persistent Photoconductivity Suppression","authors":"Yuhan Pu, Yung C. Liang","doi":"10.1002/aelm.202500216","DOIUrl":"https://doi.org/10.1002/aelm.202500216","url":null,"abstract":"Conventional GaN‐based UV photodetectors (PDs) suffer from prolonged turn‐off dynamics and high residual off‐state currents, severely limiting their use in high‐speed optoelectronic applications. In this work, a self‐powered, on‐chip AlGaN/GaN photovoltaic‐photodetector integrated configuration (PPIC) that combines photovoltaic energy harvesting and UV photodetection is proposed to address these challenges. Taking advantage of the high conductivity and carrier mobility of the 2D electron gas (2DEG) at AlGaN/GaN heterojunction, the PPIC facilitates an internal gain under the field associated with the photovoltaic (PV) bias and achieves enhanced static photo‐responsivity. Crucially, the PV dynamically biases the PD in synchronization with the UV illumination, ceasing the residual photocarrier collection in dark conditions by eliminating the collection field, thereby effectively suppressing residual current and enhancing frequency response. Apart from competitive static self‐powered performance under 365 nm UV, the PPIC with 0.16 mm2 PV area exhibits outstanding transient performance, including the 3‐dB bandwidth of 6230 Hz and ultrafast rise and fall times of 61.18 and 97.79 µs respectively – over 100‐fold improvement compared to the conventional PD with external bias. Fabricated with CMOS‐compatible processes, the PPIC offers a solution for high‐speed, self‐powered UV photodetection, with transformative potential in applications like optoelectronic communication and UV imaging.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"32 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Million‐Atom Simulation of the Set Process in Phase Change Memories at the Real Device Scale 真实器件尺度下相变存储器集合过程的百万原子模拟

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-09 DOI: 10.1002/aelm.202500110

Omar Abou El Kheir, Marco Bernasconi

{"title":"Million‐Atom Simulation of the Set Process in Phase Change Memories at the Real Device Scale","authors":"Omar Abou El Kheir, Marco Bernasconi","doi":"10.1002/aelm.202500110","DOIUrl":"https://doi.org/10.1002/aelm.202500110","url":null,"abstract":"Phase change materials are exploited in several enabling technologies such as storage class memories, neuromorphic devices and memories embedded in microcontrollers. A key functional property for these applications is the fast crystal nucleation and growth in the supercool liquid phase. Over the last decade, atomistic simulations based on density functional theory (DFT) have provided crucial insights on the early stage of this process. These simulations are, however, restricted to a few hundred atoms for at most a few ns. More recently, the scope of the DFT simulations is greatly extended by leveraging on machine learning techniques. In this study, it is showed that the exploitation of a recently devised neural network potential for the prototypical phase change compound Ge2Sb2Te5, allows simulating the crystallization process in a multimillion atom model at the length and time scales of the real memory devices. The simulations provide a vivid atomistic picture of the subtle interplay between crystal nucleation and crystal growth from the crystal/amorphous rim. Moreover, the simulations have allowed quantifying the distribution of point defects that controls electronic transport, in a very large crystallite grown at the real conditions of the set process of the device.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Breaking Barriers: Centimeter-Sized Single Layer WSe2 by Gold-Mediated Exfoliation for Ambipolar Field Effect Transistors at Ultra-Low Voltages 突破障碍：超低电压下双极场效应晶体管中金介导剥离的厘米级单层WSe2

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-09 DOI: 10.1002/aelm.202500188

Sarah Grützmacher, Wenkai Liu, Max Heyl, Patrick Asalem, Norbert Koch, Emil J. W. List-Kratochvil, Giovanni Ligorio

{"title":"Breaking Barriers: Centimeter-Sized Single Layer WSe2 by Gold-Mediated Exfoliation for Ambipolar Field Effect Transistors at Ultra-Low Voltages","authors":"Sarah Grützmacher, Wenkai Liu, Max Heyl, Patrick Asalem, Norbert Koch, Emil J. W. List-Kratochvil, Giovanni Ligorio","doi":"10.1002/aelm.202500188","DOIUrl":"https://doi.org/10.1002/aelm.202500188","url":null,"abstract":"Transition Metal Dichalcogenides (TMDCs) are promising semiconductor alternatives to silicon in CMOS technology. Their layered nature allows scaling to a single layer (1L) without degrading electrical performance, enabling further miniaturization of field-effect transistors (FETs). TMDCs like WSe2 exhibit ambipolar transport, allowing fabrication of both p-type and n-type devices on a single flake, simplifying circuit design. Ambipolar, large-area, high-quality 1L-WSe2 is therefore highly desirable. Here, centimeter-scale exfoliated 1L-WSe2 is achieved, reaching 1L areas of up to 20 mm2 via thermally activated gold-mediated TMDC exfoliation using large, high-quality WSe₂ parent crystals. The quality of 1L-WSe2 is comprehensively investigated via Raman spectroscopy, photoluminescence, X-ray, and ultraviolet photoelectron spectroscopy, as well as electronic transport measurements. For the latter, 1L-WSe2-based FETs are fabricated on lithium-ion conducting glass ceramic substrates serving as both supporting substrate and high-performance gate. Subthreshold slopes as steep as 30 and 50 mV dec−1, maximum mobilities of 15 and 18 cm2 V⁻¹ s⁻¹, and ON/OFF ratios of ≈108 and 109 for electron and hole currents, respectively, are achieved at ultra-low gate voltages (≈2 V). The performance, demonstrated across 15 devices, suggests that 1L-WSe2 in this device architecture can pave the way toward providing an alternative to conventional silicon-based CMOS technology for innovative, further miniaturized devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Quality Epitaxial Five-Layer Aurivillius Films with In-Plane Ferroelectricity for Electrocaloric Cooling 高品质面内铁电外延五层Aurivillius薄膜用于电热冷却

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-06 DOI: 10.1002/aelm.202400962

Sara Lafuerza, Javier Blasco, Marco Evangelisti, Gloria Subías, David Gracia, José Á. Pardo, Eduardo Barriuso, Xavier Torrelles, Jessica Padilla-Pantoja, José M. Caicedo, José Santiso

{"title":"High-Quality Epitaxial Five-Layer Aurivillius Films with In-Plane Ferroelectricity for Electrocaloric Cooling","authors":"Sara Lafuerza, Javier Blasco, Marco Evangelisti, Gloria Subías, David Gracia, José Á. Pardo, Eduardo Barriuso, Xavier Torrelles, Jessica Padilla-Pantoja, José M. Caicedo, José Santiso","doi":"10.1002/aelm.202400962","DOIUrl":"https://doi.org/10.1002/aelm.202400962","url":null,"abstract":"High-quality purely c-axis oriented epitaxial thin films of the Aurivillius phase Sr2Bi4Ti5O18 with n = 5 (Sr,Bi)TiO3 perovskite-like layers, are grown on SrTiO3 substrates by pulsed laser deposition. The highest crystalline quality is obtained with a 20 wt.% Bi-excess target and average stacking order values in the proximity of the ideal value n = 5 are attained for an optimum deposition temperature of 650 °C. Scanning transmission electron microscopy reveals regions with n ranging from 4 to 6 around an average thickness of n = 5, in agreement with the X-ray diffraction analysis. Interdigital electrodes are used to probe the in-plane polarization and survey the electrocaloric properties. A maximum adiabatic temperature change of ΔT ∼ 0.95 °C for an electric field of 150 kV cm−1 is observed at ≈135 °C. Larger values are expected at higher temperatures around the ferroelectric Curie temperature, TC. Since TC of Sr2Bi4Ti5O18 can be tuned by codoping, the findings pave the way toward a large electrocaloric effect at ambient temperature.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"138 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144229088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding the Interplay Between Thermal Activation, Diffusion, and Phase Segregation of Molecular Dopants Blended with Polymeric Semiconductors 了解与聚合物半导体混合的分子掺杂剂的热活化、扩散和相分离之间的相互作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-05 DOI: 10.1002/aelm.202500170

Francesca Pallini, Sara Mattiello, Mauro Sassi, Gabriele Paoli, Giuseppe Mattioli, Pietro Rossi, Giulia Coco, Alberto D. Scaccabarozzi, Brian Minki Kim, Pietro Mariani, Hiba Wakidi, Sadie M. Flagg, Massimiliano D'Arienzo, Mario Caironi, Thuc-Quyen Nguyen, Luca Beverina

{"title":"Understanding the Interplay Between Thermal Activation, Diffusion, and Phase Segregation of Molecular Dopants Blended with Polymeric Semiconductors","authors":"Francesca Pallini, Sara Mattiello, Mauro Sassi, Gabriele Paoli, Giuseppe Mattioli, Pietro Rossi, Giulia Coco, Alberto D. Scaccabarozzi, Brian Minki Kim, Pietro Mariani, Hiba Wakidi, Sadie M. Flagg, Massimiliano D'Arienzo, Mario Caironi, Thuc-Quyen Nguyen, Luca Beverina","doi":"10.1002/aelm.202500170","DOIUrl":"https://doi.org/10.1002/aelm.202500170","url":null,"abstract":"Molecular doping of polymeric semiconductors is a key strategy to tune charge transport properties, energy levels alignment and charge injection in printed electronic devices. N-type doping is more challenging than p-type due to the characteristic energy levels of performing polymers requiring the development of oxygen sensitive dopants. Precursor dopants are kinetically stable compounds that cannot directly dope the target semiconductor but can be converted in situ via thermal activation into the real doping species. 1,3-Dimethyl-2-(4-(dimethylamino)phenyl)-2,4-dihydro-1H-benzoimidazole (N-DMBI-H) is the most widely employed example. While in blend with the polymeric semiconductor, the thermal activation of DMBI-H like molecules does not exclusively lead to doping but also causes diffusion and phase segregation of both the dopant itself and the various possible by-products of the doping cascade. All such processes have profound impact on the morphology, microstructure and charge transport properties of the blend. In this paper, we compare different DMBI-H derivatives with comparable thermodynamic doping capability over the benchmark polymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) and we show how the phase segregation process is the main responsible for their different performances and dopant design can help enhance intermolecular interactions and reduce phase segregation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0