Advanced Electronic Materials最新文献

{"title":"Physical Reservoir Computing Utilizing Ion-Gating Transistors Operating in Electric Double Layer and Redox Mechanisms","authors":"Takashi Tsuchiya, Daiki Nishioka, Wataru Namiki, Kazuya Terabe","doi":"10.1002/aelm.202400625","DOIUrl":"https://doi.org/10.1002/aelm.202400625","url":null,"abstract":"The enormous energy consumption of modern machine learning technologies, such as deep learning and generative artificial intelligence, is one of the most critical concerns of the time. To solve this problem, physical reservoir computing, which uses the non-linear dynamics exhibited by mechanical systems such as materials and devices as a computational resource for highly efficient information processing, has attracted much attention in recent years. In particular, ion-gated transistors, a group of devices that control electrical conductivity using electrochemical mechanisms such as electric double layers and redox, show very high computational performance with complex and diverse output properties in contrast to their simple structures, due to the complexity of the physical and chemical processes involved. This research provides an overview of physical reservoir computing using ion-gating transistors, focusing on the materials used, various computational tasks, and operating mechanisms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Inhomogeneous Temperature in Chip-Scale Infrared Thermal Sources: A Revisited Blackbody Radiation Formula with Experimental Validation","authors":"Shady R. Labib, Yasser M. Sabry, Ahmed. A. Elsayed, Frédéric Marty, Tarik Bourouina, Diaa Khalil","doi":"10.1002/aelm.202400674","DOIUrl":"https://doi.org/10.1002/aelm.202400674","url":null,"abstract":"Miniature and low-cost light sources are highly desirable for numerous optical microsystems. Among these, devices based on blackbody radiation of a filament heated at a few hundred degrees, perfectly fit with the requirements of producing a broad spectral range falling in the infrared range, owing to Planck's law. These light sources are of primary interest for Fourier transform infrared (FTIR) spectroscopy. Although thermal light production is simple, achieving precise light intensity is not a trivial task. Herein, the impact of the inhomogeneous temperature on the emitted radiation is studied. Blackbody radiation formulae are revisited for miniature sources, taking into account the temperature distribution and using the principle of superposition of non-coherent sources. A theoretical model is formulated by dividing the source into multiple annular elementary sources of different temperature. This results in effective, corrected blackbody emission. Analytical formulae are derived in the case of a quadratic temperature distribution. For the experimental validation, a silicon-based source, made of a platinum resistive micro-heater on top of heavily doped silicon, is fabricated and experimentally characterized at temperatures ranging from 300 to 520 K. The experimental results show good agreement with the model predictions in the explored wavelength range of (λ = 2.5–4.8 µm).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"229 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D Nano Hafnium-Based Ferroelectric Memory Vertical Array for High-Density and High-Reliability Logic-In-Memory Application","authors":"Jiajie Yu, Tianyu Wang, Chen Lu, Zhenhai Li, Kangli Xu, Yongkai Liu, Yifan Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen","doi":"10.1002/aelm.202400438","DOIUrl":"https://doi.org/10.1002/aelm.202400438","url":null,"abstract":"A new type of ferroelectric memory device with high reliability and complementary metal-oxide-semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectric materials of HfO₂ are fabricated. The device exhibits high speed (50 ns), low read voltage (0.5 V), and great reliability with no substantial degradation after 10¹⁰ cycles and a 10-years data retention at 85 °C. The IMP and NAND logic are achieved with stable memory window (>200 mV) across the vertical devices’ interconnection. On this basis, combining with the traditional CMOS logic device, multiple combination logic functions containing NOT, AND, and NOR are achieved by simulation. The collaboration of devices in the vertical direction providing the possibility of combining multi-bit logic in memory functions and paves the way for the implementation of high-density, high-reliability, and low-energy consumption computing-in-memory chips compatible with the CMOS technology.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide","authors":"Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes","doi":"10.1002/aelm.202400338","DOIUrl":"https://doi.org/10.1002/aelm.202400338","url":null,"abstract":"Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si-JNTs) is demonstrated using gaseous nitrogen dioxide (NO₂). This involves a dual reaction in both <i>p</i>- and <i>n</i>-type conduction, resulting in a significant decrease in the current in <i>n</i>-conduction mode and an increase in the <i>p</i>-conduction mode upon NO₂ exposure. Various Si-JNT parameters, including “on”-current (<i>I_on</i>), threshold voltage (<i>V_th</i>), and mobility (<i>µ</i>) exhibit dynamic changes in both the <i>p</i>- and <i>n</i>-conduction modes of the ambipolar transistor upon interaction with NO₂ (concentration between 2.5 – 50 ppm). Additionally, NO₂ exposure to Si-JNTs with different surface morphologies, that is, unpassivated Si-JNTs with a native oxide or with a thermally grown oxide (10 nm), show distinct influences on <i>I_on</i>, <i>V_th</i>, and <i>µ</i>, highlighting the effect of surface oxide on NO₂-mediated charge transfer. Interaction with NO₂ alters the carrier concentration in the JNT channel, with NO₂ acting as an electron acceptor and inducing holes, as supported by Density Functional Theory (DFT) calculations, providing a pathway for charge transfer and “pseudo” molecular doping in ambipolar Si-JNTs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D α-In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators","authors":"Jiayi Sun, Weifan Cai, Yang Yang, Yihao Zhuang, Qing Zhang","doi":"10.1002/aelm.202400498","DOIUrl":"https://doi.org/10.1002/aelm.202400498","url":null,"abstract":"Tunable and switchable film bulk acoustic resonators (FBARs) with the capability of dynamically adjusting their resonant frequencies hold significant promise for advanced multi-band radio frequency (RF) communication systems. However, tunable and switchable FBARs based on conventional thin ferroelectric materials face several challenges in meeting the demands of advanced RF applications. Specifically, submicron-thick ferroelectric materials suffer from degradation in piezoelectric performance due to the strong scattering of acoustic waves caused by surface defects, as well as the inconsistency in crystal orientation. Recent advances in 2D ferroelectric materials create new opportunities for high-performance tunable and switchable FBARs. Here, the first batch of FBAR chips based on 2D α-In₂Se₃ flakes is reported. The α-In₂Se₃-based FBARs are normally under the on-state and possess a small off-voltage of −4 V. A tuning range of 26 MHz is achieved with a control voltage from −2 to 4 V at the resonant frequency of 8.6 GHz. To the best of the author's knowledge, this is the first batch of tunable FBARs that can function beyond the sub-6 GHz band. This work demonstrates for the first time that 2D ferroelectric materials are very promising for high-frequency tunable and switchable FBARs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Cell Membrane Potential Stimulation and Recording by an Electrolyte-Gated Organic Field-Effect Transistor","authors":"Nicolò Lago, Alessandra Galli, Sarah Tonello, Sara Ruiz-Molina, Saralea Marino, Stefano Casalini, Marco Buonomo, Simona Pisu, Marta Mas-Torrent, Giada Giorgi, Morten Gram Pedersen, Mario Bortolozzi, Andrea Cester","doi":"10.1002/aelm.202400134","DOIUrl":"https://doi.org/10.1002/aelm.202400134","url":null,"abstract":"The reliable stimulation and recording of electrical activity in single cells by means of organic bio-electronics will be an important milestone in developing new low-cost and highly biocompatible medical devices. This paper demonstrates extracellular voltage stimulation and single-cell membrane potential recording by means of a dual-gate electrolyte-gated organic field-effect transistors (EGOFET) employing 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene blended with polystyrene as active material. To obtain a sufficiently small footprint to allow bidirectional communication at the single cell level, the EGOFET technology has been scaled down implementing a Corbino layout, paving the way to the development of novel bidirectional Electrocorticography (ECoG) devices with a high spatial resolution. A specific and thorough analysis of the working mechanisms of EGOFET-based bio-sensors is reported, highlighting the importance of the device design and using an appropriate batch of measurements for the recording of the electrical activity of cells.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"80 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Change Memory: A Review on Electrical Behavior and Use in Analog In-Memory-Computing (A-IMC) Applications","authors":"Mattia Boniardi, Matteo Baldo, Mario Allegra, Andrea Redaelli","doi":"10.1002/aelm.202400599","DOIUrl":"https://doi.org/10.1002/aelm.202400599","url":null,"abstract":"Recent development and progress of Artificial Intelligence (AI) algorithms made clear that this topic is a paradigm shift with respect to the past. High throughput and ability to do complex tasks makes AI a great field of opportunity. This advancement is somehow limited by the physical implementation of the chips that are still bound to the historical von-Neumann Architecture with processing units and memory hardware spatially separated. The way data is bussed and processed needs disruptive innovation, rather than an evolutionary approach, too. In Analog In-Memory Computing (A-IMC) the typical properties of resistance-based memory technologies are used to both store and compute information. This allows for incredibly high parallelism and removes the problems related to the known von-Neumann bottleneck. In the present work, A-IMC networks based on resistive memories and on the Phase Change Memory (PCM) technology, in particular, are extensively discussed. After a first review of the general features of PCM devices, their application to A-IMC is described, aiming at a full description of the current technological scenario.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aqueous Ammonia Sensor with Neuromorphic Detection","authors":"Kateryna Vyshniakova, Mohammad Javad Mirshojaeian Hosseini, Huiwen Bai, Masoome Fatahi, Victor Marco Rocha Malacco, Shawn S Donkin, Richard M Voyles, Robert A. Nawrocki","doi":"10.1002/aelm.202400509","DOIUrl":"https://doi.org/10.1002/aelm.202400509","url":null,"abstract":"A hybrid inorganic–organic neuromorphic sensor utilizing a thin film zinc oxide (ZnO) detector with organic neuromorphic pre-processing is developed to quantify ammonia in aqueous environments, including biological analytes. Impedimetric ZnO sensor, connected to an organic somatic circuit, reliably and accurately detects changes in electrical impedance to measure and quantify variations in the concentration of ammonia. The sensing mechanism of the ZnO thin film sensor is hypothesized to be the cause of the decrease in resistance of a solution with an increase in ammonia concentration. It is found that the surface oxide of the ZnO layer reacts with even very low concentrations of ammonia (&lt;span data-altimg=\"/cms/asset/a36b91bf-f859-44b5-a5d9-080394253626/aelm1030-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"6\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm1030-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3\" data-semantic-content=\"4\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"upper N upper H 3\" data-semantic-type=\"infixop\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"5\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-msub data-semantic-children=\"1,2\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"latinletter\" data-semantic-type=\"subscript\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-script style=\"vertical-align: -0.15em; margin-left: -0.057em;\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;/mjx-script&gt;&lt;/mjx-msub&gt;&lt;/mjx-mrow&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"urn:x-wiley:2199160X:media:aelm1030:aelm1030-math-0001\" display=\"inline\" location=\"graphic/aelm1030-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"&gt;&lt;semantics&gt;&lt;mrow data-semantic-=\"\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3\" data-semantic-content=\"4\" data-semantic-role=\"implicit\" data-semantic-speech=\"upper N upper H 3\" data-semantic-type=\"infixop\"&gt;&lt;mi data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic-parent=","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"250 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid Prototyping for Accelerated Establishment of Film Processing‐Performance Relationships in Silicon Phthalocyanine OFETs","authors":"Rosemary R. Cranston, Jacob Mauthe, Tonghui Wang, Gaurab J. Thapa, Aram Amassian, Benoît H. Lessard","doi":"10.1002/aelm.202400500","DOIUrl":"https://doi.org/10.1002/aelm.202400500","url":null,"abstract":"Understanding the complex relationships underlying the performance of organic electronic devices, such as organic field‐effect transistors (OFETs), requires researchers to navigate a multi‐dimensional parameter space that includes material design, solution formulation, fabrication parameters, and device geometry. Herein, a recently developed materials acceleration platform is demonstrated, named the RoboMapper, to perform direct on‐chip fabrication of OFETs by ultrasonic meniscus printing using silicon phthalocyanine (SiPc) derivatives as the semiconductor. OFETs using bis(tri‐<jats:italic>n</jats:italic>‐butylsilyl oxide) SiPc ((3BS)<jats:sub>2</jats:sub>‐SiPc) exhibited the best device performance characterized by the highest electron field‐effect mobility (<jats:italic>µ<jats:sub>e</jats:sub></jats:italic>). Through optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS), the favorable performance of (3BS)<jats:sub>2</jats:sub>‐SiPc is attributed to the specific film morphology and molecular packing achieved with optimal print conditions. Investigating the impact of deposition parameters reveals the crucial role of solvent evaporation rate and print speed in achieving high‐quality film formation. Overall, optimal fabrication conditions for (3BS)<jats:sub>2</jats:sub>‐SiPc devices include slow print speeds and fast evaporating solutions achieved by using a mixture of co‐solvents and an elevated substrate temperature. The results of this work reveal distinct relationships between deposition conditions, film properties, and device performance for each SiPc derivative and emphasize the necessity of high throughput experimentation to comprehensively understand process‐performance relationships in organic semiconductors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching","authors":"Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter","doi":"10.1002/aelm.202400691","DOIUrl":"https://doi.org/10.1002/aelm.202400691","url":null,"abstract":"2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few‐layer/multilayer SnSe<jats:sub>2</jats:sub> gated by a solution top gate combines very high room‐temperature electron mobility (up to 800 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup>s<jats:sup>−1</jats:sup>), along with large on‐off current ratios (&gt;10<jats:sup>5</jats:sup>) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field‐effect devices, at exceptionally large sheet carrier concentrations of ≈10<jats:sup>13</jats:sup> cm<jats:sup>−2</jats:sup>. Observed mobility enhancements upon partial depletion of the channel point to near‐surface defects or impurities as the mobility‐limiting scattering centers. Under illumination, the resulting gap states give rise to gate‐controlled switching between positive and negative photoconductance. The results qualify SnSe<jats:sub>2</jats:sub> as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"64 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}