Advanced Electronic Materials最新文献

Wireless Technologies for Wearable Electronics: A Review (Adv. Electron. Mater. 10/2025) 可穿戴电子设备的无线技术综述[j]。板牙。10/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-03 DOI: 10.1002/aelm.70022

Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae-Woong Jeong

引用次数: 0

Wireless, Battery-free, Implantable Inductor-Capacitor Based Sensors (Adv. Electron. Mater. 10/2025) 无线，无电池，植入式电感电容传感器(Adv.电子。板牙。10/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-03 DOI: 10.1002/aelm.70029

Baochun Xu, Cunjiang Yu

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Enhanced Percolation Effect in Sub-100 Nm Nanograting Structure for High-Performance Bending Insensitive Flexible Pressure Sensor (Adv. Electron. Mater. 10/2025) 高性能弯曲不敏感柔性压力传感器中亚100 Nm纳米光栅结构的增强渗透效应板牙。10/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-03 DOI: 10.1002/aelm.70023

Jae-Soon Yang, Min-Ho Seo, Min-Seung Jo, Kwang-Wook Choi, Jae-Shin Lee, Myung-Kun Chung, Bon-Jae Koo, Jae-Young Yoo, Jun-Bo Yoon

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Encapsulated Organohydrogel Couplants for Wearable Ultrasounds (Adv. Electron. Mater. 10/2025) 可穿戴超声波封装有机水凝胶偶联剂（Adv.电子）板牙。10/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-03 DOI: 10.1002/aelm.70030

Xiaoru Dong, Zhi Yang, Chaoran Xu, Jun Zhao, Juntong Zhu, Haokun Yi, Hui Xu, Zhuo Li

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Magnetically Compensated Nanometer‐Thin Ga‐Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy 具有垂直磁各向异性的磁补偿纳米薄镓取代钇铁石榴石（Ga:YIG）薄膜

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500232

Carsten Dubs, Oleksii Surzhenko

{"title":"Magnetically Compensated Nanometer‐Thin Ga‐Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy","authors":"Carsten Dubs, Oleksii Surzhenko","doi":"10.1002/aelm.202500232","DOIUrl":"https://doi.org/10.1002/aelm.202500232","url":null,"abstract":"Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin‐wave physics and high‐speed magnonic applications. This study reports on key magnetic parameters of nanometer‐thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4πMs below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4πMr and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points Tcomp near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points Tcomp are determined and correlated with their Curie temperatures TC. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths ΔHFWHM correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4πMeff and thus enables films with robust PMA. This opens up a new parameter space for the fine‐tuning of potential magnonic spin‐wave devices on commonly used GGG substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers 苯二呋喃酮- Isatin受体聚合物主链构象、形态和热电性质的相互作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500213

Diego R. Hinojosa, Nathan J. Pataki, Francesca Pallini, Guillaume Freychet, Andreas Erhardt, Kevin Schuller, Selina Olthof, Klaus Meerholz, Christopher R. McNeill, Mario Caironi, Florian Günther, Michael Sommer

{"title":"Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers","authors":"Diego R. Hinojosa, Nathan J. Pataki, Francesca Pallini, Guillaume Freychet, Andreas Erhardt, Kevin Schuller, Selina Olthof, Klaus Meerholz, Christopher R. McNeill, Mario Caironi, Florian Günther, Michael Sommer","doi":"10.1002/aelm.202500213","DOIUrl":"https://doi.org/10.1002/aelm.202500213","url":null,"abstract":"Benzodifuranone (BDF)‐isatin‐based conjugated acceptor copolymers with different stereoelectronic properties are designed, guided by density functional theory calculations. syn‐ and anti‐conformations are predicted to depend on both the presence of chlorine substituents as well as on the steric demand of the comonomer. Backbone torsion decreases with the comonomer of the order thiophene (T) > furan (F) > acetylene (A). Six copolymers of BDF‐isatin with T, F, and A are prepared, referred to as H‐BDF‐T, Cl‐BDF‐T, H‐BDF‐F, Cl‐BDF‐F, H‐BDF‐A, and Cl‐BDF‐A. Electrochemically and spectroscopically determined HOMO and LUMO energy levels align qualitatively and confirm a stabilization of the LUMO of the chlorinated copolymers. The thin film microstructures of H‐BDF‐A and Cl‐BDF‐A, having a linear backbone, are characterized by an edge‐on orientation, while the four remaining copolymers with a more curved backbone predominantly orient face‐on. The non‐chlorinated furan copolymer H‐BDF‐F stands out due to its curved yet coplanar backbone, face‐on orientation, high degree of crystallinity, close π−π stacking distance, the highest electrical conductivity of 3 S cm−1, the best air stability of electrical conductivity among the series, and an appreciably high power factor. These results demonstrate that theory‐guided design allows for optimizing nonhalogenated n‐type copolymers of low synthetic complexity for thermoelectric applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topological Skyrmion‐Based Spin‐Torque‐Diode Effect in Magnetic Tunnel Junctions 磁隧道结中基于拓扑Skyrmion的自旋转矩二极管效应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500130

Shuhui Liu, Riccardo Tomasello, Yuxuan Wu, Bin Fang, Aitian Chen, Dongxing Zheng, Baoshun Zhang, Emily Darwin, Hans J. Hug, Mario Carpentieri, Wanjun Jiang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng

{"title":"Topological Skyrmion‐Based Spin‐Torque‐Diode Effect in Magnetic Tunnel Junctions","authors":"Shuhui Liu, Riccardo Tomasello, Yuxuan Wu, Bin Fang, Aitian Chen, Dongxing Zheng, Baoshun Zhang, Emily Darwin, Hans J. Hug, Mario Carpentieri, Wanjun Jiang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng","doi":"10.1002/aelm.202500130","DOIUrl":"https://doi.org/10.1002/aelm.202500130","url":null,"abstract":"The Internet of Things market's rapid growth is increasing the need for energy‐efficient nanoscale hardware for edge computing and microwave applications. Magnetic tunnel junctions (MTJs), as key components of spintronic microwave technology, offer a promising pathway for compact and high‐performance microwave detectors. Simultaneously, the emerging field of skyrmionics combines concepts from topology and spintronics, opening new avenues for device innovation. This study demonstrates the electrical excitation and detection of skyrmion dynamics using a topological spin‐torque diode (STD) with a nanoscale MTJ on a skyrmionic material at room temperature and for a wide region of applied fields, including the zero‐field case. Quantitative Magnetic Force Microscopy measurements confirm the presence of a single skyrmion in the MTJ‐free layer. Electrical measurements reveal the electrical excitation via spin‐transfer torque (STT) of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics to the breathing mode and highlight the impact of thickness‐dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii–Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone in the development of topological spin microwave devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144546962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure Ge/GeSi异质结构的可编程低温存储器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202500102

Adelaide Bradicich, Tzu‐Ming Lu

{"title":"Programmable Cryogenic Memory in a Ge/GeSi Heterostructure","authors":"Adelaide Bradicich, Tzu‐Ming Lu","doi":"10.1002/aelm.202500102","DOIUrl":"https://doi.org/10.1002/aelm.202500102","url":null,"abstract":"Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing‐in‐memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field‐effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high‐conductance state. We show that this device can be set to a low‐conductance state by sweeping a negative bias on the device drain, and reset it to its high‐conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide‐semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group‐IV HFETs to perform as analog cryogenic memory components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"633 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Evidence of Electron‐enhanced Interfacial Thermal Conductance Through Two‐Dimensional Electron Gas 电子通过二维电子气体增强界面热导的实验证据

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202400931

Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue‐Jun Yan, Ming‐Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan‐Feng Chen

{"title":"Experimental Evidence of Electron‐enhanced Interfacial Thermal Conductance Through Two‐Dimensional Electron Gas","authors":"Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue‐Jun Yan, Ming‐Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan‐Feng Chen","doi":"10.1002/aelm.202400931","DOIUrl":"https://doi.org/10.1002/aelm.202400931","url":null,"abstract":"It has been a persistent challenge to experimentally distinguish the contribution of electron‐phonon coupling on interfacial thermal conductance from phonon‐dominated pathways. The LaAlO3/SrTiO3 (LAO/STO) interface offers a unique platform to address this, at which two‐dimensional electron gas (2DEG) can be formed or absent depending on whether the LAO is terminated by TiO2 or SrO during the growth, and enables a direct comparison of thermal transport with and without interfacial free electrons. Using time‐domain thermoreflectance measurements, it is demonstrated that the interfacial thermal conductance is enhanced by 35–40% in the 2DEG‐active interface compared to its 2DEG‐free counterpart. This enhancement provides direct experimental evidence of electron‐phonon coupling as an additional thermal transport channel, distinct from phonon contributions. The extracted electron‐phonon coupling coefficient (G≈1016 W m−3 K−1) aligns with the first‐principles predictions for oxide interfaces. Crucially, the results resolve the long‐standing ambiguity in decoupling electronic and phononic thermal pathways, offering a generalizable framework to quantify electron‐phonon interactions at metal‐dielectric heterointerfaces.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors 碳纳米管晶体管中介电屏蔽层可调掺杂

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202500231

Chen‐Han Chou, Han‐Yi Huang, Hsin‐Yuan Chiu, Guan‐Zhen Wu, Bo‐Heng Liu, Chien‐Wei Chen, Chi‐Chung Kei, Chao‐Hsin Chien

引用次数: 0