Advanced Electronic Materials最新文献

Real‐Time Observation of Thermal Surface Recovery in SrVO 3 SrVO 3热表面恢复的实时观测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-16 DOI: 10.1002/aelm.70541

Amit Cohen, Jonathan Ludwick, Ward Yahya, Maria Baskin, Lishai Shoham, Tyson C. Back, Lior Kornblum

{"title":"Real‐Time Observation of Thermal Surface Recovery in SrVO 3","authors":"Amit Cohen, Jonathan Ludwick, Ward Yahya, Maria Baskin, Lishai Shoham, Tyson C. Back, Lior Kornblum","doi":"10.1002/aelm.70541","DOIUrl":"https://doi.org/10.1002/aelm.70541","url":null,"abstract":"Correlated oxides are emerging materials with a broad range of applications in next‐generation devices, most recently as attractive, earth‐abundant transparent conductive electrodes for photovoltaics and electro‐optic devices. SrVO 3 (SVO), a model correlated metal and a promising transparent conducting oxide, develops a several‐nanometer‐thick V 5 + near‐surface region (NSR) under ambient conditions. This oxidized layer obscures the intrinsic correlated‐metallic V 4 + character and limits both fundamental studies of the physics and the material's integration into electronic devices. Here, we demonstrate a direct and controllable approach for recovering the metallic SVO by thermally reducing the NSR under ultra‐high vacuum. Real‐time in situ X‐ray photoelectron spectroscopy reveals a sharp transformation from a V 5 + ‐dominated surface to mixed valence states, dominated by V 4 + (∼65% of the spectral weight), and a recovery of its metallic character. This is compared with a comprehensive ex situ analysis, suggesting this transformation is accompanied by mass redistribution and partial oxygen loss, leading to nanoscale surface reorganization and modest lattice expansion without loss of perovskite crystallographic integrity. These findings establish a practical method for obtaining predominantly V 4 + SVO surfaces without protective capping layers, a capability that expands the engineering and design space of correlated oxides for functional devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transparent and Flexible Broadband Microwave Absorber Based on a Nested Open‐Ring Metallic Mesh Architecture 基于嵌套开环金属网结构的透明柔性宽带微波吸收器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-15 DOI: 10.1002/aelm.70608

Zhouying Jiang, Yuxi Hou, Mengnan Wang, Su Shen, Yan‐Hua Liu

{"title":"Transparent and Flexible Broadband Microwave Absorber Based on a Nested Open‐Ring Metallic Mesh Architecture","authors":"Zhouying Jiang, Yuxi Hou, Mengnan Wang, Su Shen, Yan‐Hua Liu","doi":"10.1002/aelm.70608","DOIUrl":"https://doi.org/10.1002/aelm.70608","url":null,"abstract":"Transparent and flexible microwave absorbers (TFMAs) are highly desirable for next‐generation electromagnetic stealth and shielding systems that demand conformal integration onto curved or deformable platforms, such as aircraft radomes, flexible displays, and wearable optoelectronic devices. However, most existing transparent absorbers rely on rigid substrates or brittle conductive layers, which are fundamentally incompatible with flexible and conformal applications. In this work, we propose an all‐mesh‐based multilayer TFMA that consists of a nested double open‐ring resonant layer formed by metallic meshes and a mesh‐covered reflective backing. Unlike continuous conductive films, the subwavelength mesh topology sustains intense localized electromagnetic resonance while permitting high visible transmission. This design enables a broadband absorption exceeding 90% across 4.9–12.3 GHz, covering both C‐ and X‐bands, and simultaneously exhibits an average visible transmittance of 75.8% and excellent mechanical flexibility. Moreover, the absorber delivers robust polarization and angle‐insensitive performance under oblique incidence, and retains over 80% absorption efficiency after rigorous static and cyclic bending tests, confirming exceptional mechanical durability. This work establishes a scalable design strategy for transparent microwave absorbers based on mesh‐engineered electromagnetic architectures, offering a promising pathway toward conformal electromagnetic protection compatible with optoelectronic and curved platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perspective: Quantum Computing on Magnetic Racetrack 视角：磁赛道上的量子计算

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-15 DOI: 10.1002/aelm.70614

Ji Zou, Jelena Klinovaja, Daniel Loss

引用次数: 0

Towards Ideal Electron‐Transporting Transistor Characteristics in Polymer Semiconductors in Ambient Air 环境空气中聚合物半导体理想电子输运晶体管特性的研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-14 DOI: 10.1002/aelm.70599

Hio‐Ieng Un, Miao Xiong, Yang Lu, Chi‐Yuan Yang, Tian‐Yu Zhang, Ze‐Fan Yao, Jie‐Yu Wang, Jian Pei

{"title":"Towards Ideal Electron‐Transporting Transistor Characteristics in Polymer Semiconductors in Ambient Air","authors":"Hio‐Ieng Un, Miao Xiong, Yang Lu, Chi‐Yuan Yang, Tian‐Yu Zhang, Ze‐Fan Yao, Jie‐Yu Wang, Jian Pei","doi":"10.1002/aelm.70599","DOIUrl":"https://doi.org/10.1002/aelm.70599","url":null,"abstract":"The coexistence of high mobility and ideal current–voltage transistor characteristics is highly desirable for real‐work applications of field‐effect transistors. However, very few high‐mobility polymer transistors can exhibit reliability factors >70%, and even rarer for electron‐transporting devices. In this work, we report a coexistence of a reliability factor of 90% and high mobility of 0.6 cm 2 V −1 s −1 in FBDPPV‐based transistors and, more importantly, systematically investigate the origin by combining optical and microstructural characterizations and transport physics study. We found that in this rigid, coplanar, distortion‐free polymer FBDPPV, efficient charge transport that induces high mobility and near‐ideal transistor behaviors is supported by efficient intrachain transport and limited by energetic disorder along the interchain transport pathway consisting of disorderly connected very small grains. We also compare the structure‐property relationship of FBDPPV with some benchmark high‐mobility polymers and provide insights into rational design strategies for achieving the coexistence of high mobility and ideal current–voltage transistor characteristics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic Landau–Khalatnikov Modeling of Ferroelectric Hafnium–Zirconium Oxides Across Volatile and Non‐Volatile Switching 铁电铪锆氧化物在挥发性和非挥发性开关中的动态Landau-Khalatnikov模型

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-13 DOI: 10.1002/aelm.70610

Davide Rossetti, Yichun Xu, Shiva Asapu, Taehwan Moon, Seung Ju Kim, Drake R. Austin, Ruoyu Zhao, Tong Wang, Jian Zhao, Brian M. Everhart, Michele Bonnin, Alon Ascoli, Fernando Corinto, Nicholas R. Glavin, R. Stanley Williams, J. Joshua Yang

{"title":"Dynamic Landau–Khalatnikov Modeling of Ferroelectric Hafnium–Zirconium Oxides Across Volatile and Non‐Volatile Switching","authors":"Davide Rossetti, Yichun Xu, Shiva Asapu, Taehwan Moon, Seung Ju Kim, Drake R. Austin, Ruoyu Zhao, Tong Wang, Jian Zhao, Brian M. Everhart, Michele Bonnin, Alon Ascoli, Fernando Corinto, Nicholas R. Glavin, R. Stanley Williams, J. Joshua Yang","doi":"10.1002/aelm.70610","DOIUrl":"https://doi.org/10.1002/aelm.70610","url":null,"abstract":"The design of energy‐efficient neuromorphic devices demands compact, physically grounded models that seamlessly connect microscopic ferroelectric dynamics to macroscopic circuit behavior. Hafnium–zirconium oxides (, HZO) are compelling candidates owing to their CMOS compatibility, scalability below 10 nm, and tunable transition between ferroelectric and volatile responses. Yet, conventional first‐order Landau–Khalatnikov (LK) formulations cannot capture key experimental features such as negative differential capacitance, pseudo‐inductive transients, and leakage interplay. Here we introduce an extended LK framework incorporating inertial second‐order terms, nonlinear charge‐dependent damping, and a modular leakage branch. This unified, simulation‐ready model quantitatively reproduces experimental Q–V characteristics across Hf‐rich, equiatomic, and Zr‐rich HZO compositions, defining operational regimes from non‐volatile memory to volatile, reservoir‐like dynamics. By linking free‐energy landscapes to compact circuit representations, the approach establishes a predictive device–model–circuit co‐design framework that connects atomistic energetics with system‐level simulation, enabling composition‐specific design rules for scalable, low‐power neuromorphic architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pairing Non‐Fullerene Acceptors With the Right Polymer: Impact of Phase Morphology and Short‐Range Transport on Charge Generation 非富勒烯受体与合适聚合物的配对：相形态和短程输运对电荷产生的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-13 DOI: 10.1002/aelm.70581

Yufei Zhong, Gareth John Moore, Subhrangsu Mukherjee, Yanfang Geng, Nikolaos Droseros, Martina Causa’, Lee J. Richter, Dean M. DeLongchamp, Erjun Zhou, Natalie Banerji

{"title":"Pairing Non‐Fullerene Acceptors With the Right Polymer: Impact of Phase Morphology and Short‐Range Transport on Charge Generation","authors":"Yufei Zhong, Gareth John Moore, Subhrangsu Mukherjee, Yanfang Geng, Nikolaos Droseros, Martina Causa’, Lee J. Richter, Dean M. DeLongchamp, Erjun Zhou, Natalie Banerji","doi":"10.1002/aelm.70581","DOIUrl":"https://doi.org/10.1002/aelm.70581","url":null,"abstract":"Organic photovoltaics based on non‐fullerene acceptors (NFAs) have demonstrated high and rapidly increasing power conversion efficiency in recent years. Yet, the requirements for pairing NFAs with an optimal donor polymer remain unclear. To explore the desirable properties of polymers when combining them with NFAs, we herein study a representative NFA molecule combined with three different polymers. To mimic different phase morphologies, we compare bilayers to optimized blends with a three‐phase morphology (neat donor and acceptor regions coexisting with intermixed domains) and to ‘dilute‐donor’ and ‘dilute‐acceptor’ systems (completely intermixed scenario). The solar cell performance is related to the free charge generation efficiency probed by ultrafast transient and electro‐modulated absorption spectroscopy. We find that the free charge generation in the optimal polymer:NFA pair is highly resilient to the phase morphology. This blend benefits from a favorable kinetic competition between fast transport‐assisted charge separation (related to locally ordered polymer chains) and slow intrinsic recombination (related to a high‐lying charge transfer state, according to the energy gap law). These findings guide the molecular design of polymeric donors for efficient charge generation in NFA‐based photovoltaic blends.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing 液-液界面组装和超精密金属打印制造的MoS 2忆阻器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-13 DOI: 10.1002/aelm.70582

Miguel Franco, Daniel Neves, Dorina T. Papanastasiou, Jonas Deuermeier, Tomás Calmeiro, Tomás Mingates, Adam Kelly, Joseph Neilson, Eugénie Martinez, Zdeněk Sofer, Elvira Fortunato, Rodrigo Martins, Emanuel Carlos, Asal Kiazadeh

{"title":"MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing","authors":"Miguel Franco, Daniel Neves, Dorina T. Papanastasiou, Jonas Deuermeier, Tomás Calmeiro, Tomás Mingates, Adam Kelly, Joseph Neilson, Eugénie Martinez, Zdeněk Sofer, Elvira Fortunato, Rodrigo Martins, Emanuel Carlos, Asal Kiazadeh","doi":"10.1002/aelm.70582","DOIUrl":"https://doi.org/10.1002/aelm.70582","url":null,"abstract":"A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"85 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization 通过化学计量优化提高GeTe - sb2t3伪二元相变材料的热电性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-13 DOI: 10.1002/aelm.70609

Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar

{"title":"Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization","authors":"Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar","doi":"10.1002/aelm.70609","DOIUrl":"https://doi.org/10.1002/aelm.70609","url":null,"abstract":"Pseudo‐Binary GeTe‐Sb 2 Te 3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge 45 Te 52 S 3 and Sb 2 Te 3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge 5 Sb 37 Te 58 ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge 9 Sb 33 Te 58 to Ge 5 Sb 37 Te 58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"53 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2-Based RRAM From 300 to 1.5 K 实现量子兼容的非易失性存储器：从300到1.5 K的基于1T1R HfO 2的RRAM的低温评估

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-12 Epub Date: 2026-08-13 DOI: 10.1002/aelm.202500798

Emilio Pérez-Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez

{"title":"Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2-Based RRAM From 300 to 1.5 K","authors":"Emilio Pérez-Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez","doi":"10.1002/aelm.202500798","DOIUrl":"10.1002/aelm.202500798","url":null,"abstract":"To enable compact quantum computing systems, cryogenically compatible CMOS-based non-volatile memories are required. In this work, we investigate 1-transistor–1-resistor (1T1R) resistive random-access memory (RRAM) devices over an extended temperature range, including previously unexplored cryogenic regimes. To enhance storage density, we explore a multilevel-cell approach via multilevel programming. As temperature decreases, the low-resistance state (LRS) effective conductance increases, improving state separation but also leading to higher LRS currents and increased reset voltages required for reliable switching to the high-resistance state (HRS), resulting in incomplete filament rupture and a broader HRS distribution. Through independent characterization of the access nMOS transistor, we identify transistor temperature dependence as the dominant factor governing LRS evolution, while extraction of the intrinsic metal–insulator–metal (MIM) behavior reveals an opposite trend, with decreasing conductivity at lower temperatures. Based on these insights, we implement an optimized programming strategy for cryogenic operation by tuning the nMOS gate bias during set, reducing LRS currents, particularly in intermediate and high conductance states, while preserving state separation, narrowing the HRS distribution, and lowering reset voltages. Overall, this work establishes a robust and scalable approach for reliable 1T1R operation at cryogenic temperatures and provides a key step toward nonvolatile memory integration in quantum computing architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500798","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148729051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable Ternary Logic-In-Memory With Organic Antiambipolar Transistor 可重构三元逻辑存储器与有机反双极性晶体管

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-12 Epub Date: 2026-08-20 DOI: 10.1002/aelm.70538

Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama

{"title":"Reconfigurable Ternary Logic-In-Memory With Organic Antiambipolar Transistor","authors":"Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama","doi":"10.1002/aelm.70538","DOIUrl":"10.1002/aelm.70538","url":null,"abstract":"We developed a reconfigurable ternary logic-in-memory (LIM) device based on an organic antiambipolar transistor and incorporating a gold floating gate into a hafnium oxide (HfO2) gate insulator. First, a standard ternary inverter was obtained with extremely low input and drain voltages (2 V) owing to the high dielectric constant of the HfO2 gate insulator. Three distinct output logic states (“2,” “1,” and “0”) were clearly obtained for the corresponding input logic states (“0,” “1,” and “2”). Then, the voltage transfer curve was laterally shifted up to 1.8 V by controlling the hole- and electron-injection processes into the floating gate, obtaining a ternary nonvolatile memory. This memory function realized versatile reconfigurable ternary inverter operations. Three ternary inverters, namely, standard, negative, and positive ternary inverters, were demonstrated in a single LIM device. Remarkably, these inverter operations were performed using the same input voltages and then electrically reconfigured by adjusting the charge condition (i.e., holes or electrons) of the floating gate. Our development seems promising for performing multivalued in-memory computing toward surpassing the capabilities of existing von Neumann systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70538","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0