On Ga2O3 Self-Switching Nano-Diodes (Adv. Electron. Mater. 11/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-07-17 DOI:10.1002/aelm.70036

Glen Isaac Maciel García, Jorge Esteban Bolio, Vishal Khandelwal, Ganesh Mainali, Jose Taboada, Haicheng Cao, Biplab Sarkar, Xiaohang Li

引用次数: 0

Abstract

Ga₂O₃ Self-Switching Nano-Diodes

This cover image illustrates a multichannel self-switching nano-diode, highlighting enhanced channel current flow under UV illumination. Additionally, increased relative permittivity in the trench regions also leads to higher current flow. More information can be found in article number 2500177 by Xiaohang Li and co-workers.

Abstract Image

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Ga2O3自开关纳米二极管的研究板牙。11/2025)

Ga2O3自开关纳米二极管这张封面图片展示了一个多通道自开关纳米二极管，突出显示了紫外线照射下通道电流的增强。此外，沟槽区域相对介电常数的增加也会导致电流的增加。更多信息可以在李晓航及其同事的2500177号文章中找到。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.