Advanced Electronic Materials最新文献_第10页

Masthead: (Adv. Electron. Mater. 12/2024) 报头：（ad . Electron）板牙。12/2024)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202470040

引用次数: 0

Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals 交流极化对Pb(Mg1/3Nb2/3)O3-PbTiO3单晶体光伏效应的影响研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202400471

Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai

{"title":"Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals","authors":"Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai","doi":"10.1002/aelm.202400471","DOIUrl":"https://doi.org/10.1002/aelm.202400471","url":null,"abstract":"The bulk photovoltaic effect (BPVE) provides a theory of surpassing the Schockley–Queisser limit. However, improving the BPVE efficiency to a level comparable to that of the semiconductor-based efficiencies is challenging in practice due to conflicting material design requirements. Previous works have shown that a stacked domain structure in a rhombohedral BiFeO3 ferroelectric epitaxial thin film is able to satisfy the criteria of both a small mean free path for an optimized photocurrent and a large distance between electrodes for an optimized photovoltage. Nevertheless, this hypothesis has remained difficult to verify with other materials due to the complication of domain wall manipulation. This work takes advantage of the recent advances in controlling the domain structure in rhombohedral Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals via AC poling. By comparing the photovoltage and photocurrent values after domain manipulations in four types of commercial PMN-PT samples, this work validates the hypothesis of the stacked domain structure enhancing the BPVE by witnessing a simultaneous increase of over 35% for both the open-circuit voltage and short-circuit current from DC to the AC-poled states under a 405 nm laser illumination. This result paves the way for further improving the BPVE efficiency in ferroelectrics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Short-Term and Long-Term Memory Functionality of a Brain-Like Device Built from Nanoparticle Atomic Switch Networks (Adv. Electron. Mater. 12/2024) 纳米粒子原子开关网络构建的类脑装置的短期和长期记忆功能。板牙。12/2024)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202470039

Oradee Srikimkaew, Saman Azhari, Deep Banerjee, Yuki Usami, Hirofumi Tanaka

引用次数: 0

Correction to: Tuning the Structure, Magnetic, and High Frequency Properties of Sc-Doped Sr0.5Ba0.5ScxFe12-xO19/NiFe2O4 Hard/Soft Nanocomposites 修正：调整sc掺杂Sr0.5Ba0.5ScxFe12-xO19/NiFe2O4硬/软纳米复合材料的结构、磁性和高频性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-09 DOI: 10.1002/aelm.202400815

Munirah A. Almessiere, Yassine Slimani, Norah A. Algarou, Maksim G. Vakhitov, Denis S. Klygach, Abdulhadi Baykal, Tatyana I. Zubar, Sergei V. Trukhanov, Alex V. Trukhanov, Hussein Attia, Murat Sertkol, Ismail A. Auwal

引用次数: 0

Transfer of Millimeter-Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement 通过环氧树脂方法在刚性衬底上转移毫米级应变多铁外延薄膜以增强磁性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-09 DOI: 10.1002/aelm.202400492

James P. Barnard, Yizhi Zhang, Lizabeth Quigley, Jianan Shen, Benson Kunhung Tsai, Max R. Chhabra, Jiho Noh, Hyunseung Jung, Oleg Mitrofanov, Raktim Sarma, Aleem Siddiqui, Igal Brener, Chloe F. Doiron, Haiyan Wang

{"title":"Transfer of Millimeter-Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement","authors":"James P. Barnard, Yizhi Zhang, Lizabeth Quigley, Jianan Shen, Benson Kunhung Tsai, Max R. Chhabra, Jiho Noh, Hyunseung Jung, Oleg Mitrofanov, Raktim Sarma, Aleem Siddiqui, Igal Brener, Chloe F. Doiron, Haiyan Wang","doi":"10.1002/aelm.202400492","DOIUrl":"https://doi.org/10.1002/aelm.202400492","url":null,"abstract":"The demonstration of epitaxial thin film transfer has enormous potential for thin film devices free from the traditional substrate epitaxy limitations. However, large-area continuous film transfer remains a challenge for the commonly reported polymer-based transfer methods due to bending and cracking during transfer, especially for highly strained epitaxial thin films. In this work, a new epoxy-based, rigid transfer method is used to transfer films from an SrTiO3 (STO) growth substrate onto various new substrates, including those that will typically pose significant problems for epitaxy. An epitaxial multiferroic Bi3Fe2Mn2Ox (BFMO) layered supercell (LSC) material is selected as the thin film for this demonstration. The results of surface and structure studies show an order of magnitude increase in the continuous area of transferred films when compared to previous transfer methods. The magnetic properties of the BFMO LSC films are shown to be enhanced by the release of strain in this method, and ferromagnetic resonance is found with an exceptionally low Gilbert damping coefficient. The large-area transfer of this highly strained complex oxide BFMO thin film presents enormous potential for the integration of many other multifunctional oxides onto new substrates for future magnetic sensors and memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"107 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142796842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Digital-Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto-Electronic Logic and Sen-Memory Applications 基于碳点的数模集成光电忆阻器，用于三元光电逻辑和传感器存储

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-09 DOI: 10.1002/aelm.202400834

Jiaqi Xu, Xiaoning Zhao, Dan Xie, Ya Lin, Zhongqiang Wang, Zhuangzhuang Li, Haiyang Xu, Yichun Liu

{"title":"Digital-Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto-Electronic Logic and Sen-Memory Applications","authors":"Jiaqi Xu, Xiaoning Zhao, Dan Xie, Ya Lin, Zhongqiang Wang, Zhuangzhuang Li, Haiyang Xu, Yichun Liu","doi":"10.1002/aelm.202400834","DOIUrl":"https://doi.org/10.1002/aelm.202400834","url":null,"abstract":"Optoelectronic memristor with light as an additional stimulus is generating interest in various remarkable optical-electrical-coupled applications. Herein, an optoelectronic memristor with hybrid digital-analog switching behavior is developed by incorporating carbon dots (CDs) into the polymethylmethacrylate and the polystyrene layers as charge trapping medium. The memristor exhibits tri-stable digital switching behavior under electro-optical programming and analog switching behavior under optical programming. For the digital switching, the SET and RESET voltage of the memristor can be modulated through UV light illumination. Taking advantage of the cooperation of electrical and light stimuli, new ternary optoelectronic logic algorithm implementations with all-electric or all-optical signals as inputs are proposed. For the analog switching, the device resistance can be gradually modulated through UV light illumination and output intensity- and duration-dependent characteristics. These features endow the memristor with fused image sensing-and-memory (sen-memory) capability without an auxiliary bias. In addition, the sen-memory can perform image contrast enhancement operation as the preprocessing operation of the human retina, which can improve the subsequent image recognition rate in the processing tasks. The multifunctional memristor highlights the potential for ternary optoelectronic computing and artificial vision applications, and also, is expected to expand the application scopes of CDs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"105 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142796849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Orbitronics: Mechanisms, Materials and Devices 轨道电子学：机制、材料与装置

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-08 DOI: 10.1002/aelm.202400554

Ping Wang, Feng Chen, Yuhe Yang, Shuai Hu, Yue Li, Wenhong Wang, Delin Zhang, Yong Jiang

{"title":"Orbitronics: Mechanisms, Materials and Devices","authors":"Ping Wang, Feng Chen, Yuhe Yang, Shuai Hu, Yue Li, Wenhong Wang, Delin Zhang, Yong Jiang","doi":"10.1002/aelm.202400554","DOIUrl":"https://doi.org/10.1002/aelm.202400554","url":null,"abstract":"Spintronics has been extensively explored over the past decades, focusing primarily on the spin characteristic of the electron, while the orbital feature of the electron has been conventionally assumed to be quenched by the crystal field effect. Recently, studies have unveiled a fascinating discovery that orbital current, originating from orbital effects, can be generated in materials with weak spin-orbit coupling by applying electric fields, enabling the manipulation of the ferromagnetic magnetization and induction of terahertz emission. This review highlights recent achievements in orbital effects, materials, and devices, beginning by discussing the mechanisms underlying orbital effects, e.g. the orbital Hall effect, orbital Rashba-Edelstein effect, inverse orbital Hall effect, and inverse orbital Rashba-Edelstein effect. Subsequently, a wide range of materials exhibiting orbital effects are classified and the orbital sources in them are identified. Furthermore, the review introduces the orbital torque devices and the orbital terahertz emitters, summarizing the in-depth mechanisms of the orbital torque, orbital torque efficiency, and orbital diffusion length across various material structures. Additionally, the review presents strategies for enhancing orbital torque efficiency and driving magnetization switching. These efforts aim to explore the potential applications for orbitronic memory devices, computing components, and terahertz emitters.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSe2 Field-Effect Transistors p型单层WSe2场效应晶体管的低阻触点延伸掺杂

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-08 DOI: 10.1002/aelm.202400843

Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande

{"title":"Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSe2 Field-Effect Transistors","authors":"Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande","doi":"10.1002/aelm.202400843","DOIUrl":"https://doi.org/10.1002/aelm.202400843","url":null,"abstract":"Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field-effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond-silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low-resistance contacts for monolayer WSe2 p-FETs. Self-limiting oxidation transforms a bilayer WSe2 into a hetero-bilayer of a high-work-function WOxSey on a monolayer WSe2. Then, damage-free nanolithography defines an undoped nano-channel, preserving the high on-current of WOxSey-doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WOxSey interlayer under the contacts achieves record-low contact resistances for monolayer WSe2 over a hole density range of 1012 to 1013 cm−2 (1.2 ± 0.3 kΩ µm at 1013 cm−2). The WOxSey-doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □−1. Monolayer WSe2 p-FETs with sub-50 nm channel lengths reach a maximum drain current of 154 µA µm−1 with an on/off ratio of 107–108. These results define strategies for nanometer-scale selective-area doping in 2D FETs and other 2D architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Recoverable Bendability of Ag2Te-Based Thermoelectrics by Elastic Strain Manipulation 弹性应变操作提高Ag2Te基热电材料的可恢复弯曲性

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-05 DOI: 10.1002/aelm.202400728

Zimin Fan, Wenjun Ding, Xinyi Shen, Jun Luo, Wen Li, Yanzhong Pei

{"title":"Enhancing Recoverable Bendability of Ag2Te-Based Thermoelectrics by Elastic Strain Manipulation","authors":"Zimin Fan, Wenjun Ding, Xinyi Shen, Jun Luo, Wen Li, Yanzhong Pei","doi":"10.1002/aelm.202400728","DOIUrl":"10.1002/aelm.202400728","url":null,"abstract":"Inherent rigidity of high-performing inorganic thermoelectric materials constrains their potential applications as flexible power sources for the wearable electronics. Deformation within the elastic region ensures the reservation of a material's initial functionalities, motivating the current work to focus on the elasticity enhancement of Ag2Te thermoelectric. Ag2S-alloying results in an observable reduction in the modulus of Ag2Te1-xSx alloys (x ≤ 0.3), which thereby enables not only a great increase in the elastic strain but also a significant plasticization of the alloys, allowing the plastic deformability by the rolling at a temperature of ≈120 °C. Such a plastic deformation-induced improvement in yield strength leads to a further improvement of the elastic strain up to 1.8%, corresponding to ≈200% enhancements as compared to pristine Ag2Te (≈0.6%). Eventually, the multi-pass hot-rolled Ag2Te0.9S0.1 film achieves a full recoverability in transport properties even after elastic bending within a tiny radius of ≈3 mm for 100 000 times and a power density as high as ≈25 W m−2 in six-leg device. This work robustly demonstrates a universal strategy to advance the recoverable bendability of inorganic thermoelectric materials for flexible applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 2","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400728","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142776790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Advances in Enhancing the Sensitivity of Biosensors Based on Field Effect Transistors 基于场效应晶体管提高生物传感器灵敏度的研究进展

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-05 DOI: 10.1002/aelm.202400712

Yuying Zhou, Tongshi Feng, Yao Li, Xiang Ao, Shengfa Liang, Xiaonan Yang, Lingfei Wang, Xiaoxin Xu, Wenchang Zhang

{"title":"Recent Advances in Enhancing the Sensitivity of Biosensors Based on Field Effect Transistors","authors":"Yuying Zhou, Tongshi Feng, Yao Li, Xiang Ao, Shengfa Liang, Xiaonan Yang, Lingfei Wang, Xiaoxin Xu, Wenchang Zhang","doi":"10.1002/aelm.202400712","DOIUrl":"https://doi.org/10.1002/aelm.202400712","url":null,"abstract":"Biosensors based on field effect transistor (FET), also known as Bio‐FETs, offer numerous advantages, including high sensitivity, rapid response speed, low operating voltage, compact size, high reliability, and easily integrative. These features endow Bio‐FETs with tremendous performance in rapid analysis for samples with ultra‐low concentration at large‐scale, broadening their multiple potential applications. In recent years, the research based on Bio‐FETs has attracted more and more attention. A lot of effort is put into the challenge to improve their sensitivity, which can be influenced by various factors. This review focuses on the current approaches from multiple perspectives, including overcoming the influence of Debye shielding effects, promoting the binding efficiency of analytes and FETs surface, and improving the structures of FETs device. Correspondingly, novel strategies to increase the Debye length, facilitate high frequency electric field modulation, enhance the specific interaction efficiency, and enlarge the specific surface area (SBET) are also summarized. Additionally, there is a lack of a reliable standard method to characterize the sensitivity of FETs currently. Regarding this issue, the most commonly used definitions and representation parameters of sensitivity are also evaluated. Overall, this review outlines the potential future research directions to offer insights for enhancing the sensitivity of Bio‐FETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142776351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0