Advanced Electronic Materials最新文献_第10页

All-Solution-Processed Perovskite Light-Emitting Transistors Enabled by a Fully Organic Architecture 全有机结构实现全溶液处理钙钛矿发光晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-19 DOI: 10.1002/aelm.202500703

Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin

{"title":"All-Solution-Processed Perovskite Light-Emitting Transistors Enabled by a Fully Organic Architecture","authors":"Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin","doi":"10.1002/aelm.202500703","DOIUrl":"https://doi.org/10.1002/aelm.202500703","url":null,"abstract":"CsPbBr3 perovskite nanocrystals (Pe-NCs) are promising solution-processable emitters for light-emitting devices due to their high brightness, color purity, and photoluminescence quantum yield. However, their integration into more advanced device architectures such as organic light-emitting transistors (OLETs) remains limited by the lack of fully solution-processable platforms that support uniform and compact Pe-NCs emissive layers (EMLs). In this work, we report fully solution-processed Pe-NCs-based LETs (Pe-LETs) using CsPbBr3 nanocrystals as the emitter. The realization of such a device is enabled by the development of a fully organic LET platform that incorporates: (i) a tailored bilayer gate dielectric of polyvinyl alcohol (PVA) and CyTOP, (ii) a solvent-resistant p-type polymer semiconductor, poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2yl)thieno[3,2-b]thiophene)] (DPP-DTT), and (iii) a nanocomposite EML of Pe-NCs dispersed in a poly(9-vinylcarbazole) and 1,3-bis[2-(4-tert-butylphenyl)1,3,4-oxadiazo-5-yl]benzene (PVK:OXD-7) matrix. Morphological and photophysical characterization, including confocal laser scanning microscopy, drives the optimization of solvent and processing conditions for uniform film formation. Benchmark device substructures are also used to fine-tune the organic platform for effective EML integration. The resulting Pe-LETs exhibit a narrow emission at 509 nm (full width at half maximum, FWHM = 19.2 nm), demonstrating excellent color purity suitable for displays and sensing. A maximum external quantum efficiency of 4.17 × 10−3 % is achieved, comparable to state-of-the-art values for inorganic-based LETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147489668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synchronization of Analog Neuron Circuits With Digital Memristive Synapses: An Hybrid Approach 模拟神经元电路与数字记忆突触的同步：一种混合方法

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-19 DOI: 10.1002/aelm.202500830

Lamberto Carnazza, Francesco Maria Esposito, Carlo Famoso, Arturo Buscarino

引用次数: 0

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large-Scale Optimization Tasks 大规模优化任务中伊辛机器的基本挑战、物理实现和集成策略

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-17 DOI: 10.1002/aelm.202500682

Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim

{"title":"Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large-Scale Optimization Tasks","authors":"Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim","doi":"10.1002/aelm.202500682","DOIUrl":"https://doi.org/10.1002/aelm.202500682","url":null,"abstract":"Ising machines are specialized hardware solvers designed to solve computationally hard combinatorial optimization problems by finding ground states of the Ising model. As von Neumann architecture encounters fundamental bottlenecks in data movement, parallelism, and energy consumption, diverse physical implementations of Ising machines emerge as promising alternatives. This review comprehensively examines state-of-the-art Ising machine implementations across five major categories: digital complementary metal-oxide-semiconductor (CMOS) platforms employing various annealing strategies, analog CMOS architecture based on physical interactions, emerging device-based systems using coupled oscillators and probabilistic bits, coherent Ising machines leveraging photonic processes, and quantum approaches including both annealing and gate-based algorithms. Each platform provides unique advantages rooted in its underlying physics, yet all face core bottlenecks in scaling and connectivity. These limitations exacerbate issues in power efficiency, time-to-solution, stochasticity, and reliability. Building on this cross-platform analysis, monolithic three-dimensional (M3D) integration is introduced as an emerging design paradigm to overcome planar constraints through vertical functional partitioning. This approach outlines how M3D integration could relax scaling and connectivity bottlenecks and may eventually enable Ising machines to reach the scale and complexity required for large-scale real-world optimization problems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147466039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors 稀土镧掺杂对原子层沉积工艺氧化铟薄膜晶体管电性能和稳定性的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-14 DOI: 10.1002/aelm.70343

Jinxiu Zhao, Zhiyu Lin, Ziheng Wang, Liankai Zheng, Kai Jiang, Haoran Zhao, Mengwei Si

{"title":"Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors","authors":"Jinxiu Zhao, Zhiyu Lin, Ziheng Wang, Liankai Zheng, Kai Jiang, Haoran Zhao, Mengwei Si","doi":"10.1002/aelm.70343","DOIUrl":"https://doi.org/10.1002/aelm.70343","url":null,"abstract":"In this work, lanthanum‐doped indium oxide (InLaO) thin‐film transistors (TFTs) are fabricated by atomic layer deposition (ALD) with different La concentrations. Effects of La concentration on crystallinity, surface chemical information, surface morphology, along with the electrical properties of ALD‐grown InLaO TFTs, are systematically investigated. With increasing La content from 0 to 20.2 at. %, the field‐effect mobility (µ FE ) continuously decreases from 106.3 to 2.3 cm 2 (V·s) −1 . In contrast, the negative bias stability (NBS) is remarkably enhanced, and the threshold voltage (V TH ) shifts from −0.157 to −0.005 V under −2 V bias stress for 1000 s. This trend is attributed to the stronger La─O bonding energy compared to In─O. The stable La─O bonds effectively suppress the generation of oxygen vacancies (V O ) and associated defect states, which explains the superior stability. Concurrently, these bonds also restrain the formation of conduction pathways, leading to the observed mobility degradation. This work demonstrates that La doping is an effective strategy to precisely tune the stability‐mobility balance in oxide TFTs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147448165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2 利用SiOx异质结构和垂直排列的MoS2降低阈值开关的可变性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-12 DOI: 10.1002/aelm.202500800

Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme

{"title":"Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2","authors":"Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme","doi":"10.1002/aelm.202500800","DOIUrl":"https://doi.org/10.1002/aelm.202500800","url":null,"abstract":"Two-dimensional (2D) materials and their heterostructures offer promising pathways for intercalated ion migration and regulated filament growth in resistive switching (RS) devices, enabled by their van der Waals (vdW) gaps. In vertically aligned 2D materials, this vdW gap-mediated ion transport holds great potential for high-density integration and reliable RS performance for memristor crossbar arrays. However, the fundamental switching mechanisms and their contributions to the RS remain inadequately understood. In this work, we investigate silver (Ag) filament-based threshold switching (TS) in heterostructures comprising vertically aligned 2D molybdenum disulfide (VAMoS2) grown via sulfurization and silicon oxide (SiOx). Compared to SiOx-only devices, the SiOx/VAMoS2 devices exhibit TS with higher on-threshold and hold voltages, each approximately 0.4 V, faster switching times down to 356 ns under a 4 V pulse, and a lower cycle-to-cycle on-current variability of 3.0%. A physics-based, variability-aware model reveals that confined Ag ion migration within the vdW gaps in VAMoS2 forms ultrathin seed filaments, which guide filament growth in the SiOx layer. These findings establish SiOx/VAMoS2 heterostructures as a promising concept for reliable TS in vertical device architectures for emerging memories and neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrically Tunable Room-Temperature Microwave Oscillations in GaN/AlN Triple-Barrier Resonant Tunneling Diodes 氮化镓/氮化铝三势垒共振隧道二极管中电可调谐室温微波振荡

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-11 DOI: 10.1002/aelm.202500419

Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing

{"title":"Electrically Tunable Room-Temperature Microwave Oscillations in GaN/AlN Triple-Barrier Resonant Tunneling Diodes","authors":"Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing","doi":"10.1002/aelm.202500419","DOIUrl":"https://doi.org/10.1002/aelm.202500419","url":null,"abstract":"Resonant tunneling is a quantum mechanical effect that enables electrons to traverse classically forbidden regions of space. The engineering of this quantum effect in wide-bandgap semiconductors promises important technological benefits as it seamlessly combines ultra-fast electron transport dynamics with superior power-handling capabilities. Here, we report the first realization of highly coherent electronic quantum interference and resonant tunneling injection in wide-bandgap triple-barrier heterostructures. Enabled by the high structural quality of the GaN/AlN triple-barrier active region, we observe multiple resonant tunneling peaks and negative differential conductance at room temperature. The robustness of the inter-well resonant tunneling current is experimentally confirmed via temperature-dependent electronic transport and the generation of electrically tunable microwave oscillations. These results represent a stepping stone in the engineering of intersubband tunneling transport in wide-bandgap III-nitride semiconductors, raising hopes for the realization of intersubband optical amplification and frequency-modulated resonant tunneling oscillators.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic Co-Integration of Vertical FET and Memristor for 1T1R Cell 1T1R电池垂直场效应管与忆阻器的单片协整

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-11 DOI: 10.1002/aelm.202500742

Fubo Jiao, Weiqi Dang, Gong-Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi-Jun Liang

{"title":"Monolithic Co-Integration of Vertical FET and Memristor for 1T1R Cell","authors":"Fubo Jiao, Weiqi Dang, Gong-Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi-Jun Liang","doi":"10.1002/aelm.202500742","DOIUrl":"https://doi.org/10.1002/aelm.202500742","url":null,"abstract":"One-transistor-one-memristor (1T1R) structures are essential for large-scale memristor arrays, as they enable precise read and write operations for individual cells. Currently, most 1T1R designs employ planar field-effect transistors with laterally arranged source, drain, and channel, which limit the achievable array density within a planar layout. Here, we demonstrate a compact, vertically integrated 1T1R cell by stacking a MoS2 vertical field-effect transistor (VFET) with a HfO2 memristor. The VFET channel achieves a footprint of only 10 µm2, which reduces reliance on advanced lithography and enables a reduced 1T1R cell area compared with some reported standard 0.18 µm silicon-based 1T1R implementations. The cell exhibits highly uniform resistive switching, with coefficients of variation (Cv) of only 3.4% in the high-resistance state (HRS) and 6.2% in the low-resistance state (LRS). Furthermore, it achieves quasi-linear conductance modulation across six discrete levels via VFET gate control. This demonstration establishes a scalable, area-efficient platform for 3D in-memory computing and neuromorphic structures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inkjet-Printed Metal Halide Perovskite Thin-Film Field-Effect Transistors 喷墨印刷金属卤化物钙钛矿薄膜场效应晶体管

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-08 Epub Date: 2026-02-04 DOI: 10.1002/aelm.202500517

Claas Wieland, Felix Hermerschmidt, Vincent R. F. Schröder, Daniel Steffen Rühl, Emil J. W. List-Kratochvil

{"title":"Inkjet-Printed Metal Halide Perovskite Thin-Film Field-Effect Transistors","authors":"Claas Wieland, Felix Hermerschmidt, Vincent R. F. Schröder, Daniel Steffen Rühl, Emil J. W. List-Kratochvil","doi":"10.1002/aelm.202500517","DOIUrl":"10.1002/aelm.202500517","url":null,"abstract":"Metal halide perovskites (MHPs) are promising semiconductor materials for thin-film field-effect transistors (FETs) due to their high charge carrier mobility and solution processability. Currently, MHP thin films for FETs are mostly fabricated by spin coating, a method limited by poor material utilization, non-uniformity, and scalability issues. In this study, inkjet-printing (IJP) is successfully introduced as a sustainable, additive technique for MHP thin-film FET fabrication. Spin-coated benchmark devices were first established as a performance reference achieving a mobility of 2.2 cm2 V−1 s−1 and an on/off ratio of 8 × 106. Two inkjet-based strategies are investigated: full-substrate printing and selective in-channel printing. With the full-substrate printing approach we could achieve 1.6 cm2 V−1 s−1 and an on/off ratio of 2 × 106, which replicates the device performance of the spin coated reference devices. In-channel printing enables full patterning of the FET active region and significantly reduces material waste but suffers from reduced device performance due to the coffee ring effect. By scaling the printed area and effectively isolating the coffee ring, the adverse effects are successfully mitigated, enabling a substantial recovery of device performance. This study highlights the strong potential of IJP for the fabrication of MHP thin-film FETs and provides valuable insights into overcoming current challenges. Overall, the results demonstrate that IJP is a highly promising route toward the scalable production of fully printed, high-performance perovskite electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 5","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500517","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors Zr和Hf掺杂铟锡氧化物薄膜晶体管中电荷输运特性的精确裁剪

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-08 Epub Date: 2026-02-03 DOI: 10.1002/aelm.202500722

Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann-Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider

{"title":"Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors","authors":"Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann-Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider","doi":"10.1002/aelm.202500722","DOIUrl":"10.1002/aelm.202500722","url":null,"abstract":"Zirconium and hafnium doped indium tin oxide (ITO) thin films are fabricated via atomic layer deposition (ALD) at 200°C from trimethylindium, tetrakis(dimethylamido)tin, tetrakis(dimethylamido)zirconium, and tetrakis(diethylamido)hafnium, using water as oxidant. Grazing incidence X-ray total scattering employing synchrotron radiation reveals a highly disordered structure with a short-range order, exhibiting correlation lengths of up to ∼13 Å. This is also reflected in high-resolution transmission electron microscopy, revealing an amorphous intermixed state of all constituting components. Increasing amounts of fully coordinated oxygen species with increasing amounts of dopant are evidenced by X-ray photoelectron spectroscopy analysis and attributed to zirconium and hafnium's ability to form strong oxygen bonds, and thereby suppressing the formation of oxygen vacancies. The Zr- and Hf-doped ITO thin films are integrated into thin-film transistor (TFT) devices to evaluate their suitability as semiconducting material. The electrical measurements reveal saturation mobilities (µsat) of 1.92–9.81 cm2 V−1 s−1, with high current on/off ratios (IOn/IOff) of 106–108. This study demonstrates the subtle influence of small amounts of Zr and Hf on TFT performance. This proves the ability to control the electrical behavior of TFT devices by controlled incorporation of dopants like Zr and Hf into their active channel layer.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 5","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500722","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Parametric Optimization of PEDOT:PSS Aerosol Jet Printing for Enhanced Line Morphology in Flexible Electronics PEDOT:PSS气溶胶喷射打印在柔性电子中增强线形态的参数优化

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-08 Epub Date: 2025-12-22 DOI: 10.1002/aelm.202500535

Md Shariful Islam, Christian A. Zorman, Changyong (Chase) Cao

{"title":"Parametric Optimization of PEDOT:PSS Aerosol Jet Printing for Enhanced Line Morphology in Flexible Electronics","authors":"Md Shariful Islam, Christian A. Zorman, Changyong (Chase) Cao","doi":"10.1002/aelm.202500535","DOIUrl":"10.1002/aelm.202500535","url":null,"abstract":"Aerosol Jet Printing (AJP) is an advanced, maskless fabrication technique for flexible electronics, enabling precise patterning of functional materials on diverse substrates. In this study, we systematically optimize AJP parameters to achieve superior line morphology and printing fidelity of PEDOT:PSS conductive polymer on flexible Kapton substrates. Key printing parameters—including carrier gas flow rate (CGF), sheath gas flow rate (SGF), printing speed, and ink formulation (PEDOT:PSS/DMSO ratio)—are varied to elucidate their effects primarily on line uniformity, edge definition, thickness, and defect minimization. Through comprehensive experimental analysis, we identify optimal conditions consisting of a CGF of 15–18 sccm, a SGF of 60 sccm, a printing speed of 2 mm/s, and a DMSO concentration of 10%, resulting in continuous, uniform, and defect-free printed lines with well-defined morphology and minimal overspray. These findings provide clear quantitative guidelines for reliably achieving high-quality PEDOT:PSS lines, laying a critical foundation for scalable manufacturing of flexible electronics, energy devices, and other related applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 5","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500535","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145801272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0