Advanced Electronic Materials最新文献

{"title":"Backbone Engineering of Benzodifurandione‐Based\u0000 n\u0000 ‐Type OMIECs With Antiambipolar Behavior","authors":"Dilara Gunturkun,Dilara Meli,Meike Kuhn,Eva M. Herzig,Jonathan Rivnay,Christian B. Nielsen","doi":"10.1002/aelm.70567","DOIUrl":"https://doi.org/10.1002/aelm.70567","url":null,"abstract":"ABSTRACT Organic mixed ionic‐electronic conductors (OMIECs) are key components for the next‐generation bioelectronics, albeit with n ‐type materials remaining significantly underrepresented compared to their p ‐type counterparts. Furthermore, reaching low operating voltages alongside high ambient and operational stability remains challenging when employing n ‐type OMIECs in organic electrochemical transistor (OECT)‐based applications. Herein, we report two novel n ‐type polymeric OMIECs, based on an azaisatin and benzodifurandione‐based backbone, incorporating either non‐fluorinated or fluorinated bithiophene donor units. The resulting polymers, obtained via Aldol polymerization, have high electron affinities of 4.5–4.7 eV. Both polymers function in n ‐type accumulation mode OECTs with indications of tunable antiambipolar behavior. The fluorinated polymer displays a low threshold voltage of 0.14 V, while the non‐fluorinated analogue offers excellent operational stability, with the OECT retaining 96% of its initial current after 1800 s of cycling.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance and Environmental Impact of Flexible Temperature Sensors on Cellulose‐Based Substrate","authors":"Dianne C. Corsino,Diego Ferri,Claudio Bonizzoni,Marco Affronte,Shuvaraj Ghosh,Stefania Benedetti,Alberto Rota,Antonio Ballestrazzi,Luca Pasquali,Ahmed Rasheed,Luisa Petti,Hafiza Faiqa Maqsood,Niko Münzenrieder,Roberto Rosa,Giuseppe Cantarella","doi":"10.1002/aelm.70548","DOIUrl":"https://doi.org/10.1002/aelm.70548","url":null,"abstract":"ABSTRACT To tackle the alarming generation of electronic waste, sustainable strategies must not be presented blindly without quantitatively assessing their environmental impacts. Here, a nature‐based flexible substrate called Triacetyl Cellulose (TAC) is analyzed as an eco‐friendly alternative to the widely‐used polyimide, not only by demonstrating functional thin‐film sensors but also through substrate recovery and reusability, and evaluation of associated environmental benefits through a life cycle assessment (LCA). Resistance temperature detectors (RTDs) and thermistors are realized on the TAC substrate using Cu, Mo, and AZO contacts, and InGaZnO. The temperature response of Cu‐ and Mo‐based RTDs show negligible hysteresis over multiple thermal cycles, while the AZO‐based RTD and the thermistors show consistent resistance drift. The sensors' mechanical performance is evaluated by bending measurements involving radii down to . We further show TAC recovery by Mo RTD dissolution in deionized water and TAC reusability by another sensor fabrication. Finally, LCA is employed to reliably compare the potential environmental implications of utilizing TAC in comparison with polyimide. Key results show that sensor fabrication on TAC demonstrates lower relative impacts than polyimide in all impact categories, including resource use and climate change, making it a more sustainable substrate choice for the fabrication of thin‐film temperature sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Transport in Quantum Dot Light‐Emitting Diodes","authors":"Shuxin Li,Wenxin Lin,Min Zheng,Xiongfeng Lin,Yulin Guo,Longjia Wu,Quan Niu,Paul W. M. Blom,Yuguang Ma","doi":"10.1002/aelm.70546","DOIUrl":"https://doi.org/10.1002/aelm.70546","url":null,"abstract":"ABSTRACT Despite extensive research on quantum dot light‐emitting diodes, the underlying charge transport mechanisms remain poorly understood. Previously, we have demonstrated that the hole transport in quantum dot (QD) thin films is trap‐free and space‐charge‐limited. However, the electron transport mechanism remains unexplored. In this study, we systematically investigate the electron transport in red, green, and blue (RGB) core/multi‐shell QD thin films through the analysis of the current density‐voltage ( J–V ) measurements using single‐carrier devices. Our findings reveal that the electron transport in these QD thin films is significantly impeded by the presence of electron traps, which exhibit a Gaussian energy distribution within the bandgap. Notably, the electron trap distributions observed across different QD systems exhibit a high degree of similarity. Specifically, these traps have a concentration of ∼1 × 10 23 m −3 , with the trap center energy level positioned at approximately 4.0 eV below the vacuum level. Furthermore, the width of the energy distribution of the trapping sites is comparable to that of the QD transport sites. By correlating the surface‐to‐volume ratio with the number of traps, we propose that the traps are located at the core‐shell interface and arise from uncoordinated atoms. Therefore, increasing the core size can effectively suppress the trapping effect.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"132 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices","authors":"Rei Usami,&nbsp;Koshi Oi,&nbsp;Keisuke Yamada,&nbsp;Jiang Pu,&nbsp;Hao Ou,&nbsp;Takahiko Endo,&nbsp;Yasumitsu Miyata,&nbsp;Taishi Takenobu","doi":"10.1002/aelm.202400930","DOIUrl":"10.1002/aelm.202400930","url":null,"abstract":"<p>Van der Waals (vdW) heterostructures of transition metal dichalcogenides (TMDs) have been widely employed in optoelectronic applications, including photodetectors, photovoltaic cells, and light-emitting devices (LEDs). Among these, PN-junction-based heterostructures are critical for advanced LED and laser applications, where achieving high current density is essential. However, the development of PN-junction-type LEDs using vdW heterostructures has been significantly hindered by the lack of effective doping techniques, resulting in devices with limited current densities. In this study, we propose a novel strategy for high-density carrier doping and reduced device resistance in vdW heterostructures by combining stepwise engineering of vdW stacking with electric double-layer (EDL) carrier doping. The stepwise-engineered heterostructure, based on WS₂/WSe₂, takes advantage of this configuration to facilitate efficient charge transport and enhanced carrier injection, as both P-type and N-type materials are in direct contact with the electrolyte, enabling high-density doping in both materials. Through EDL doping, clear electroluminescence was observed at the interface, with a peak current density of 9.4 × 10⁴ A/cm². This result marks a significant advancement over previous reports, demonstrating a promising pathway toward vdW heterostructure-based laser applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400930","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148288385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal Bandwidth in Semiconducting Polymer Chains","authors":"Suryoday Prodhan,&nbsp;Alessandro Troisi","doi":"10.1002/aelm.70476","DOIUrl":"10.1002/aelm.70476","url":null,"abstract":"<p>Systematic development of polymeric semiconductors has seen a general trend over the last four decades, where band narrowing has emerged as a suitable recipe for improving the charge transport characteristics. However, this strategy cannot be extended indefinitely since vanishing bandwidth will result in vanishing charge mobility. Experimental and theoretical investigations have also hinted towards a shift in the transport regime as the carrier band becomes narrower. In this work, we demonstrate that narrowing the band beyond a certain threshold modifies the nature of the charge-carriers, from partially delocalized to fully localized, and this transition corresponds to the maximum achievable mobility. Employing a fully controllable model, we illustrate that the current state-of-the-art polymers remain in the ‘sweet spot’ of the bandwidth and that further reduction in electronic coupling will not improve charge mobility significantly.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70476","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148428904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Proton Irradiation Tolerance of Fully Printed Self-Powered Carbon-Electrode Perovskite Photodetectors","authors":"Almaz R. Beisenbayev,&nbsp;Mussakhan A. Aryslan,&nbsp;Yersain K. Nurmagambetov,&nbsp;Bauyrzhan Idreisov,&nbsp;Hryhorii P. Parkhomenko,&nbsp;Maratbek T. Gabdullin,&nbsp;Annie Ng,&nbsp;Askhat N. Jumabekov,&nbsp;Yerassyl Yerlanuly","doi":"10.1002/aelm.70539","DOIUrl":"10.1002/aelm.70539","url":null,"abstract":"<p>Self-powered perovskite photodiodes are promising candidates for low-power optical sensing, yet their stability under particle irradiation remains insufficiently understood. In this work, we investigate the influence of 0.5 MeV proton irradiation on fully printed carbon-electrode perovskite photodetectors. The devices were exposed to irradiation fluences of 10¹³, 10¹⁴, and 10¹⁵ protons cm⁻² and systematically characterized through structural, optical, chemical, and electrical measurements. Structural characterization shows that the main perovskite phase is preserved after irradiation, while weak additional diffraction features and XPS binding-energy shifts indicate defect formation and modifications in the local Pb–halide coordination environment. Optical measurements reveal photoluminescence quenching and shorter carrier lifetimes, confirming enhanced non-radiative recombination. Under self-powered (0 V) operation, a reference device exhibits a photocurrent of 7.8 mA cm⁻² under 100 mW cm⁻² illumination with a maximum responsivity of 0.31 A W⁻¹ and detectivity on the order of 10¹⁰ Jones. After irradiation at 10¹⁵ protons cm⁻², the photocurrent and responsivity decrease to 3.3 mA cm⁻² and 0.19 A W⁻¹, respectively. Although proton irradiation significantly reduces the photovoltaic and photodetection performance, the photodiodes remain functional and maintain a stable photoresponse, indicating that irradiation primarily increases non-radiative recombination rather than causing complete loss of device operation.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70539","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thin-Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics","authors":"Ahmed Rasheed,&nbsp;Soufiane Krik,&nbsp;Sundus Riaz,&nbsp;Hafiza Faiqa Maqsood,&nbsp;Jacopo Nicoletti,&nbsp;Riccardo Zamboni,&nbsp;Guglielmo Trentini,&nbsp;Pietro Ibba,&nbsp;Franco Cacialli,&nbsp;Andrea Gaiardo,&nbsp;Giuseppe Cantarella,&nbsp;Niko Münzenrieder,&nbsp;Paolo Lugli,&nbsp;Giovanni Antonio Salvatore,&nbsp;Luisa Petti","doi":"10.1002/aelm.202500699","DOIUrl":"10.1002/aelm.202500699","url":null,"abstract":"&lt;p&gt;In recent years, transient (bio)electronics has witnessed a remarkable surge for their potential in sustainable and biocompatible electronic solutions. Here, chitosan-based films are demonstrated as versatile transient substrates for thin-film thermal sensors, merging sustainability with standard microfabrication. Two sensor types are fabricated: resistive temperature detectors (RTDs) via sputtering of a 100 nm molybdenum (Mo) layer, and thermistors through subsequent deposition of a 50 nm amorphous indium gallium zinc oxide (a-IGZO) semiconductor layer. Bi-directional thermal characterization in physiologically relevant ranges (25–55 &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;∘&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;mi&gt;C&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$^{circ }{rm C}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mo&gt;&lt;&lt;/mo&gt;\u0000 &lt;annotation&gt;$&lt;$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; 2.0% RH) reveals that both device types exhibited linear and reproducible responses. The thermistors show a significantly higher sensitivity (0.0184 &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;∘&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;mi&gt;C&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$^{circ }{rm C}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;annotation&gt;$^{-1}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;) more than an order of magnitude greater than the RTDs (0.0010 &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mo&gt;∘&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;mi&gt;C&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;$^{circ }{rm C}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;&lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;\u0000 &lt;annotation&gt;$^{-1}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;), with minimal deviation during extended thermal cycling (standard deviations &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mo&gt;&lt;&lt;/mo&gt;\u0000 &lt;annotation&gt;$&lt;$&lt;/annotation&gt;\u0000 ","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500699","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147695797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook","authors":"Ala K. Jehad,&nbsp;Salih Alper Akalin,&nbsp;Mustafa Erol,&nbsp;Yavuz Ozturk,&nbsp;Metin Yurddaskal","doi":"10.1002/aelm.70503","DOIUrl":"10.1002/aelm.70503","url":null,"abstract":"<p>Zinc oxide (ZnO) nanowires (NWs) are widely investigated for ultraviolet (UV) photodetectors (PDs) due to their wide direct bandgap, high exciton binding energy, and large surface-to-volume ratio enabling efficient light–matter interaction and carrier modulation. This review presents a device-physics-oriented analysis of recent advances in ZnO NW-based UV photodetectors, emphasizing the interplay between nanostructure synthesis, interface engineering, and carrier transport mechanisms. Three main device architectures—photoconductive, Schottky barrier, and metal–semiconductor–metal (MSM)—are compared in terms of operating principles, performance trade-offs, and fundamental limitations. Key enhancement strategies, including doping, surface passivation, plasmonic modification, and hybrid heterostructure integration, are discussed with respect to improvements in responsivity, response speed, and stability. Recent progress in flexible, self-powered, and multifunctional UV photodetectors is also highlighted. Current challenges, including defect control, interface engineering, reproducibility, and scalable fabrication, are critically assessed. By establishing a unified structure–property–device physics framework, this review provides insights into the fundamental limitations of ZnO NW UV photodetectors and design guidelines for next-generation optoelectronic devices.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70503","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148564646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies","authors":"Md Saifur Rahman,&nbsp;William J. Scheideler","doi":"10.1002/aelm.202500367","DOIUrl":"10.1002/aelm.202500367","url":null,"abstract":"<p>Liquid metal (LM) materials are redefining the design of soft and stretchable radio frequency (RF) devices by combining high electrical conductivity with mechanical reconfigurability. Recent advances demonstrate the use of LM in a wide range of RF components, including inductors, capacitors, antennas, and sensors, where geometry-dependent electromagnetic properties enable new forms of wearable, bio-integrated, and adaptive electronics. This review focuses on the underlying physics of RF loss in LM systems, including skin and proximity effects, magnetic and parasitic losses, and the influence of mechanical strain on resonant behavior. Beyond planar designs, emerging LM-compatible fabrication methods such as freeze casting, 2.5D and 3D printing, and viscosity tuning are explored to construct conformal, high-performance RF structures. Applications range from deformable Magnetic Resonance Imaging (MRI) coils and reconfigurable antennas to skin-mounted wireless power transfer systems. The integration of LM with magnetic and dielectric materials to achieve multifunctional RF responses is also discussed. Finally, key opportunities in high-frequency design, system-level integration, and scalable soft manufacturing are outlined, positioning LM RF platforms as a versatile foundation for the next generation of communication, sensing, and biomedical technologies.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500367","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Thin-Film Heater Composed of Laser-Induced Graphene and Poly(D, L-Lactic Acid) with Electro- and Photo-Thermal Properties toward Cancer Thermotherapy","authors":"Masato Saito,&nbsp;Sota Harada,&nbsp;Ran Imai,&nbsp;Kon Son,&nbsp;Toshinori Fujie","doi":"10.1002/aelm.202500062","DOIUrl":"10.1002/aelm.202500062","url":null,"abstract":"<p>Soft robotic devices use heat energy widely as both a power source and a functional interface. In addition, soft robots are expected to be applicable in medical and healthcare settings because of their flexibility and biocompatibility. If a small, flexible device that can generate thermal energy is developed, this device is expected to be applied as a wearable, implantable soft robotic device. This study introduces a thin-film-type heat-generating device that uses laser-induced graphene (LIG) on a poly(D, L-lactic) acid film and achieves both resistance heating by application of a direct current and photothermal conversion heating by irradiation with near-infrared light. This LIG and poly(D, L-lactic) acid composite device is composed of a thin film structure with a thickness of ≈120 µm, and in addition to a simple heating method based on the application of a direct current-type voltage, the device can also be heated by irradiating it with near-infrared light, regardless of the LIG design. In addition, because this device offers a high degree of design freedom, it is expected to be used as a flexible and biocompatible composite heating element.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 16","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500062","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144114468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}