Advanced Electronic Materials最新文献_第10页

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si 在硅基超薄 BaTiO3 薄膜中实现高铁电极化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-31 DOI: 10.1002/aelm.202400440

Pratik Bagul, Han Han, Pieter Lagrain, Stefanie Sergeant, Ilse Hoflijk, Jill Serron, Olivier Richard, Thierry Conard, Jan Van Houdt, Ingrid De Wolf, Sean R. C. McMitchell

{"title":"Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si","authors":"Pratik Bagul, Han Han, Pieter Lagrain, Stefanie Sergeant, Ilse Hoflijk, Jill Serron, Olivier Richard, Thierry Conard, Jan Van Houdt, Ingrid De Wolf, Sean R. C. McMitchell","doi":"10.1002/aelm.202400440","DOIUrl":"https://doi.org/10.1002/aelm.202400440","url":null,"abstract":"Ferroelectrics show promise for low-power, non-volatile memory technologies. However, material challenges in state-of-the-art ferroelectric hafnates and the high coercive fields required limit their application in devices. Scaling of other candidate materials is challenging, often requiring epitaxial single-crystalline growth using specialised substrates. Here, ferroelectricity is demonstrated in polycrystalline BaTiO3 films at 10 nm thickness on Si substrates. They exhibit the highest reported remnant polarization for polycrystalline layers, 13 µC cm−2, a value that is competitive with the epitaxial BaTiO3 state-of-the-art. This is realised by introducing a novel conductive oxygen barrier, platinum silicide, which also offers strain enhancement of the ferroelectricity. Moreover, it is demonstrated that these layers can be positioned in device-like stacks whilst maintaining ferroelectricity at 10 nm. The findings of polycrystalline perovskite ferroelectric growth in stack configurations akin to those in production flows paves the way for high performance perovskites with greater material complexity.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates 塑料基板上的高性能柔性硅纳米线场效应晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-30 DOI: 10.1002/aelm.202400615

Ting Zhang, Ying Sun, Ruijin Hu, Wentao Qian, Linwei Yu

{"title":"High-Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates","authors":"Ting Zhang, Ying Sun, Ruijin Hu, Wentao Qian, Linwei Yu","doi":"10.1002/aelm.202400615","DOIUrl":"https://doi.org/10.1002/aelm.202400615","url":null,"abstract":"Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high-performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiNW) field effect transistors (FETs) directly onto flexible plastic substrates is showcased. The self-aligned crystalline SiNW multi-channels are first grown through an in-plane solid–liquid–solid mechanism on rigid substrates, and then efficiently transferred in-batch onto flexible polyethylene terephthalate (PET) plastics. The FETs constructed on these transferred SiNW channels exhibit outstanding performance, with a high on/off current ratio of >105, a low subthreshold swing of 175 mV dec−1, and remarkable mechanical stability that can endure an extremely small bending radius of 0.5 mm for 1000 cycles. Furthermore, inverter logics are also successfully demonstrated on plastic substrates, highlighting a prominent routine for scalable integration of high-quality SiNW channels in the development of low-cost, high-performance flexible displays and wearable electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing 氧化铝亚氧化层对用于神经形态计算的无源 Memristor 的电导训练的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-29 DOI: 10.1002/aelm.202400651

Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang

{"title":"Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing","authors":"Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang","doi":"10.1002/aelm.202400651","DOIUrl":"https://doi.org/10.1002/aelm.202400651","url":null,"abstract":"Memristors are recognized as crucial devices for the hardware implementation of neuromorphic computing. The conductance training process of memristors has a direct impact on the performance of neuromorphic computing. However, memristor breakdown and conductance decay still hinder the precise training process of neural networks based on passive memristor. Here, AlOx/LiNbO3 (LN) memristors are designed by inserting a AlOx sub‐oxide layer between the single‐crystalline LN thin film with oxygen vacancies (OVs) and Pt layer. Under the same training conditions, lower conductance and self‐compliance current effects are observed in AlOx/LN memristor. Slight spontaneous decay of conductance is achieved after the removal of the external stimulation. To explore the effects of AlOx sub‐oxide layer on the prevention of device breakdown and suppression of conductance decay, the memristive mechanism of devices with and without AlOx layer is revealed via time‐of‐flight secondary ion mass spectrometer (ToF‐SIMS). It is reasonable to believe that the AlOx inserting layer in memristors can serve as a self‐compliance current layer to inhibit device breakdown and provide the OVs reservoir to suppress conductance decay. These results offer new possibilities and theoretical grounds for achieving more reliable and precise conductance training of passive memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources 氧化锌纳米线冷阴极半球形 X 射线源

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-29 DOI: 10.1002/aelm.202400597

Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen

{"title":"ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources","authors":"Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen","doi":"10.1002/aelm.202400597","DOIUrl":"https://doi.org/10.1002/aelm.202400597","url":null,"abstract":"Curved or spherical X‐ray sources are significant for use in intraoperative radiotherapy, adaptive static medical imaging, and high‐throughput industrial inspection, but they are hard to achieve using traditional thermionic cathode point electron sources. In this study, copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on a brass substrate with a designed shape are proposed to achieve cold cathode hemispherical X‐ray sources. The strain‐driven solid–liquid growth model of Cu‐doped ZnO nanowires is proposed, and the oxidation temperature‐dependent and time‐dependent growth characteristics are investigated to optimize the morphologies of ZnO nanowire cold cathodes with a typical turn‐on field of 7.36 MV m−1, a maximum current of 12.54 mA (4.93 mA cm−2) and a uniform field emission image with an area of 2.54 cm2. Hemispherical X‐ray sources formed by Cu‐doped ZnO nanowire field emitters grown on spherical brass alloy and an Al thin film transmission anode target deposited on a hemispherical quartz glass are successfully fabricated, achieving an operating voltage of 39 kV, a dose rate of 240 µGyair s−1 and a projection X‐ray imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process 用于高移动性 TFT 的氧化铟薄膜比较研究：ALD、PLD 和溶液工艺

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-27 DOI: 10.1002/aelm.202400145

Min Guo, Jianting Wu, Hai Ou, Dongyu Xie, Qiaoji Zhu, Yi Huang, Mengye Wang, Lingyan Liang, Xiaoci Liang, Fengjuan Liu, Ce Ning, Xubing Lu, Hongtao Cao, Guangcai Yuan, Chuan Liu

{"title":"Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process","authors":"Min Guo, Jianting Wu, Hai Ou, Dongyu Xie, Qiaoji Zhu, Yi Huang, Mengye Wang, Lingyan Liang, Xiaoci Liang, Fengjuan Liu, Ce Ning, Xubing Lu, Hongtao Cao, Guangcai Yuan, Chuan Liu","doi":"10.1002/aelm.202400145","DOIUrl":"https://doi.org/10.1002/aelm.202400145","url":null,"abstract":"Deposition of indium oxide base films for high-mobility thin film transistors (TFTs) has been an important part in the implementation of high-resolution and high-frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD-derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four-probe measurements, reaching the level of low-temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD-derived InO film features advantages as compared to those of the PLD-deposited and solution-processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias-stress stability of ALD-derived TFTs can be improved with further passivation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142490967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “Relation between Spherulitic Growth, Molecular Organization and Charge Carrier Transport in Meniscus-Guided Coated Organic Semiconducting Films” 对 "半月板引导涂层有机半导体薄膜中的球状生长、分子组织和电荷载流子传输之间的关系 "的更正

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-27 DOI: 10.1002/aelm.202400729

Ke Zhang, Michał Borkowski, Philipp Wucher, Pierre M. Beaujuge, Jasper Michels, Paul. W. M. Blom, Tomasz Marszalek, Wojciech Pisula

引用次数: 0

Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics 用于可穿戴无线电子设备的铜浆印刷纸基双频天线

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-25 DOI: 10.1002/aelm.202400522

Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, Emil J. W. List-Kratochvil

{"title":"Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics","authors":"Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, Emil J. W. List-Kratochvil","doi":"10.1002/aelm.202400522","DOIUrl":"https://doi.org/10.1002/aelm.202400522","url":null,"abstract":"Wearable wireless electronics is becoming a significant research area because of the unique features of this technology. Within this field printed antennas are the key electrical component accomplishing the signal transmission and energy harvesting tasks and at the same these antennas need to be lightweight, environmentally friendly, safe to wear, and easy to conform. Currently, the majority of available paper-based antennas are designed for RFID, sensing, UWB, WLAN, and medical applications, with just a few being utilized in wearable applications, particularly for wireless body area network (WBAN). Furthermore, few studies have been conducted on the usage of printable copper conductive materials and low-temperature plasma technique for the fabrication of such antennas. This study demonstrates the realization of a dual-band paper-based wearable antenna by screen-printing of a plasma-sintered conductive copper paste. The copper paste, composed of 51 wt% solid particles, can easily produce desired conductive patterns on photo paper after printing and a subsequent plasma sintering, with a good adhesion. The antenna designed on photopaper operates in the frequency bands of 1.73–2.55 GHz and 7.66–8.89 GHz. Free-space simulation and measurement results reveal that the antenna exhibits stable radiation performance in the targeted WBAN (2.4–2.4835 GHz) and X uplink (7.9–8.4 GHz) frequency bands, together with low profile, excellent conformality and acceptable SAR values on the body and no electronic waste formed after disposal, making it a competitive candidate for usage in wearable wireless electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"134 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142489686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linear Weight Update Synaptic Responses in Ferrimagnetic Neuromorphic Devices 铁磁神经形态设备中的线性权重更新突触响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-24 DOI: 10.1002/aelm.202400591

Junwei Zeng, Binxuan Zhao, Yakun Liu, Teng Xu, Wanjun Jiang, Liang Fang, Jiahao Liu

引用次数: 0

All-Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure 基于金属-半导体-金属结构块状半导体中电荷载流子禁锢的全电子膜晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-22 DOI: 10.1002/aelm.202400396

Abolfazl Mahmoodpoor, Alexandr Marunchenko, Sergey Makarov

{"title":"All-Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure","authors":"Abolfazl Mahmoodpoor, Alexandr Marunchenko, Sergey Makarov","doi":"10.1002/aelm.202400396","DOIUrl":"https://doi.org/10.1002/aelm.202400396","url":null,"abstract":"Memristors have gained significant attention in recent years due to their potential applications in computing and memory technology by offering higher performance, lower power consumption, and increased storage capacity. In this paper, a new type of volatile memristor is presented by analyzing the dynamic behavior of charge carriers within a metal–semiconductor–metal (MSM) structure. It is shown that an all-electronic memristor is achieved through the confinement of majority charge carriers within the bulk semiconductor by the favor of high barrier Schottky contacts. The findings reveal a remarkable current offset between forward and backward scans, along with exceptional current pulse consistency with a tunable current level using pulse frequency. These characteristics greatly simplify the process of designing electrical circuits incorporating this memristor variant. Furthermore, this research paves the way for the development of crystalline semiconductor-based memristors. While various semiconductors with controllable doping densities can be considered as potential candidates for this type of memristor, the calculations using silicon demonstrate the integration of this semiconductor with the current technology holds significant promise for two terminal memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"60 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of Trapping in Non-Volatility of Electrochemical Neuromorphic Organic Devices 捕获在电化学神经形态有机器件非挥发性中的作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-22 DOI: 10.1002/aelm.202400481

Henrique Frulani de Paula Barbosa, Andreas Schander, Andika Asyuda, Luka Bislich, Sarah Bornemann, Björn Lüssem

引用次数: 0