Advanced Electronic Materials最新文献_第10页

Magnetically Compensated Nanometer-Thin Ga-Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy 具有垂直磁各向异性的磁补偿纳米薄镓取代钇铁石榴石（Ga:YIG）薄膜

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500232

Carsten Dubs, Oleksii Surzhenko

{"title":"Magnetically Compensated Nanometer-Thin Ga-Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy","authors":"Carsten Dubs, Oleksii Surzhenko","doi":"10.1002/aelm.202500232","DOIUrl":"10.1002/aelm.202500232","url":null,"abstract":"Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin-wave physics and high-speed magnonic applications. This study reports on key magnetic parameters of nanometer-thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4πMs below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4πMr and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points Tcomp near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points Tcomp are determined and correlated with their Curie temperatures TC. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths ΔHFWHM correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4πMeff and thus enables films with robust PMA. This opens up a new parameter space for the fine-tuning of potential magnonic spin-wave devices on commonly used GGG substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500232","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers 苯二呋喃酮- Isatin受体聚合物主链构象、形态和热电性质的相互作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500213

Diego R. Hinojosa, Nathan J. Pataki, Francesca Pallini, Guillaume Freychet, Andreas Erhardt, Kevin Schuller, Selina Olthof, Klaus Meerholz, Christopher R. McNeill, Mario Caironi, Florian Günther, Michael Sommer

{"title":"Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers","authors":"Diego R. Hinojosa, Nathan J. Pataki, Francesca Pallini, Guillaume Freychet, Andreas Erhardt, Kevin Schuller, Selina Olthof, Klaus Meerholz, Christopher R. McNeill, Mario Caironi, Florian Günther, Michael Sommer","doi":"10.1002/aelm.202500213","DOIUrl":"https://doi.org/10.1002/aelm.202500213","url":null,"abstract":"Benzodifuranone (BDF)‐isatin‐based conjugated acceptor copolymers with different stereoelectronic properties are designed, guided by density functional theory calculations. syn‐ and anti‐conformations are predicted to depend on both the presence of chlorine substituents as well as on the steric demand of the comonomer. Backbone torsion decreases with the comonomer of the order thiophene (T) > furan (F) > acetylene (A). Six copolymers of BDF‐isatin with T, F, and A are prepared, referred to as H‐BDF‐T, Cl‐BDF‐T, H‐BDF‐F, Cl‐BDF‐F, H‐BDF‐A, and Cl‐BDF‐A. Electrochemically and spectroscopically determined HOMO and LUMO energy levels align qualitatively and confirm a stabilization of the LUMO of the chlorinated copolymers. The thin film microstructures of H‐BDF‐A and Cl‐BDF‐A, having a linear backbone, are characterized by an edge‐on orientation, while the four remaining copolymers with a more curved backbone predominantly orient face‐on. The non‐chlorinated furan copolymer H‐BDF‐F stands out due to its curved yet coplanar backbone, face‐on orientation, high degree of crystallinity, close π−π stacking distance, the highest electrical conductivity of 3 S cm−1, the best air stability of electrical conductivity among the series, and an appreciably high power factor. These results demonstrate that theory‐guided design allows for optimizing nonhalogenated n‐type copolymers of low synthetic complexity for thermoelectric applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topological Skyrmion-Based Spin-Torque-Diode Effect in Magnetic Tunnel Junctions 磁隧道结中基于拓扑Skyrmion的自旋转矩二极管效应

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-02 DOI: 10.1002/aelm.202500130

Shuhui Liu, Riccardo Tomasello, Yuxuan Wu, Bin Fang, Aitian Chen, Dongxing Zheng, Baoshun Zhang, Emily Darwin, Hans J. Hug, Mario Carpentieri, Wanjun Jiang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng

{"title":"Topological Skyrmion-Based Spin-Torque-Diode Effect in Magnetic Tunnel Junctions","authors":"Shuhui Liu, Riccardo Tomasello, Yuxuan Wu, Bin Fang, Aitian Chen, Dongxing Zheng, Baoshun Zhang, Emily Darwin, Hans J. Hug, Mario Carpentieri, Wanjun Jiang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng","doi":"10.1002/aelm.202500130","DOIUrl":"10.1002/aelm.202500130","url":null,"abstract":"The Internet of Things market's rapid growth is increasing the need for energy-efficient nanoscale hardware for edge computing and microwave applications. Magnetic tunnel junctions (MTJs), as key components of spintronic microwave technology, offer a promising pathway for compact and high-performance microwave detectors. Simultaneously, the emerging field of skyrmionics combines concepts from topology and spintronics, opening new avenues for device innovation. This study demonstrates the electrical excitation and detection of skyrmion dynamics using a topological spin-torque diode (STD) with a nanoscale MTJ on a skyrmionic material at room temperature and for a wide region of applied fields, including the zero-field case. Quantitative Magnetic Force Microscopy measurements confirm the presence of a single skyrmion in the MTJ-free layer. Electrical measurements reveal the electrical excitation via spin-transfer torque (STT) of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics to the breathing mode and highlight the impact of thickness-dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii–Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone in the development of topological spin microwave devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500130","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144546962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure Ge/GeSi异质结构的可编程低温存储器

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202500102

Adelaide Bradicich, Tzu-Ming Lu

{"title":"Programmable Cryogenic Memory in a Ge/GeSi Heterostructure","authors":"Adelaide Bradicich, Tzu-Ming Lu","doi":"10.1002/aelm.202500102","DOIUrl":"10.1002/aelm.202500102","url":null,"abstract":"Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500102","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Evidence of Electron-enhanced Interfacial Thermal Conductance Through Two-Dimensional Electron Gas 电子通过二维电子气体增强界面热导的实验证据

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202400931

Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue-Jun Yan, Ming-Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan-Feng Chen

{"title":"Experimental Evidence of Electron-enhanced Interfacial Thermal Conductance Through Two-Dimensional Electron Gas","authors":"Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue-Jun Yan, Ming-Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan-Feng Chen","doi":"10.1002/aelm.202400931","DOIUrl":"10.1002/aelm.202400931","url":null,"abstract":"It has been a persistent challenge to experimentally distinguish the contribution of electron-phonon coupling on interfacial thermal conductance from phonon-dominated pathways. The LaAlO3/SrTiO3 (LAO/STO) interface offers a unique platform to address this, at which two-dimensional electron gas (2DEG) can be formed or absent depending on whether the LAO is terminated by TiO2 or SrO during the growth, and enables a direct comparison of thermal transport with and without interfacial free electrons. Using time-domain thermoreflectance measurements, it is demonstrated that the interfacial thermal conductance is enhanced by 35–40% in the 2DEG-active interface compared to its 2DEG-free counterpart. This enhancement provides direct experimental evidence of electron-phonon coupling as an additional thermal transport channel, distinct from phonon contributions. The extracted electron-phonon coupling coefficient (G≈1016 W m−3 K−1) aligns with the first-principles predictions for oxide interfaces. Crucially, the results resolve the long-standing ambiguity in decoupling electronic and phononic thermal pathways, offering a generalizable framework to quantify electron-phonon interactions at metal-dielectric heterointerfaces.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400931","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors 碳纳米管晶体管中介电屏蔽层可调掺杂

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-30 DOI: 10.1002/aelm.202500231

Chen-Han Chou, Han-Yi Huang, Hsin-Yuan Chiu, Guan-Zhen Wu, Bo-Heng Liu, Chien-Wei Chen, Chi-Chung Kei, Chao-Hsin Chien

{"title":"Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors","authors":"Chen-Han Chou, Han-Yi Huang, Hsin-Yuan Chiu, Guan-Zhen Wu, Bo-Heng Liu, Chien-Wei Chen, Chi-Chung Kei, Chao-Hsin Chien","doi":"10.1002/aelm.202500231","DOIUrl":"10.1002/aelm.202500231","url":null,"abstract":"Doping is a crucial technique for achieving high-performance carbon nanotube (CNT) metal-oxide-semiconductor field-effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band-to-band tunneling (BTBT) leakage. In this work, the n-type doping of CNTs is investigated using aluminum nitride (AlN) as the dopant material and present a tunable doping approach by incorporating various screening dielectric layers between CNTs and AlN. It is confirmed that the screening effect is the dominant factor governing doping strength and demonstrates tunable doping levels ranging from 0.26 to 0.89 nm−1 by varying the screening materials and thickness. Furthermore, through the Wentzel–Kramers–Brillouin (WKB) approximation method, as the extension doping strength weakened from 0.75 to 0.45 nm−1, the BTBT leakage current can be reduced from 19 to 1.2 nA/CNT, offering significant potential for future carbon-based electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500231","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Advances in Bioresorbable Biomedical Applications: From Materials to Devices 生物可吸收生物医学应用的最新进展：从材料到设备

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-27 DOI: 10.1002/aelm.202400997

Do Yun Park, Hye-Min Lee, Su-Hwan Kim, Youngmin Sim, Yoojin Kang, Gyu-rim Jang, Sara Kim, Kyeongha Kwon, Hanjun Ryu

{"title":"Recent Advances in Bioresorbable Biomedical Applications: From Materials to Devices","authors":"Do Yun Park, Hye-Min Lee, Su-Hwan Kim, Youngmin Sim, Yoojin Kang, Gyu-rim Jang, Sara Kim, Kyeongha Kwon, Hanjun Ryu","doi":"10.1002/aelm.202400997","DOIUrl":"10.1002/aelm.202400997","url":null,"abstract":"Wearable and implantable devices provide users with continuous monitoring and treatment, and bioresorbable features can facilitate the use of temporary biomedical devicesand reduce electronic wastes (e-wastes). Bioresorbable metals and polymers offer multiple benefits, such as high conductivity and mechanical support, for skin-interfaced and implantable biomedical devices in versatile biomedical applications. These materials dissolve naturally after their targeted lifetime, avoiding complications arising from retrieval surgeries and preventing e-waste accumulation. This review summarizes recent advances in both bioresorbable materials and devices, highlighting various polymers, semiconductors, and metal options along with their dissolution processes. The following contents introduce the current developments in bioresorbable skin-interfaced and implantable systems including electrostimulation (ES), energy harvesting, sensor, and transistor systems. A concluding section discusses current challenges and future research opportunities in this field.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400997","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal and Dimensional Stability of Photocatalytic Material ZnPS3 Under Extreme Environmental Conditions ZnPS3光催化材料在极端环境条件下的热稳定性和尺寸稳定性

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-27 DOI: 10.1002/aelm.202500093

Abhishek Mukherjee, Vivian J. Santamaría-García, Damian Wlodarczyk, Ajeesh K. Somakumar, Piotr Sybilski, Ryan Siebenaller, Emmanuel Rowe, Saranya Narayanan, Michael A. Susner, L. Marcelo Lozano-Sanchez, Andrzej Suchocki, Julio L. Palma, Svetlana V. Boriskina

{"title":"Thermal and Dimensional Stability of Photocatalytic Material ZnPS3 Under Extreme Environmental Conditions","authors":"Abhishek Mukherjee, Vivian J. Santamaría-García, Damian Wlodarczyk, Ajeesh K. Somakumar, Piotr Sybilski, Ryan Siebenaller, Emmanuel Rowe, Saranya Narayanan, Michael A. Susner, L. Marcelo Lozano-Sanchez, Andrzej Suchocki, Julio L. Palma, Svetlana V. Boriskina","doi":"10.1002/aelm.202500093","DOIUrl":"10.1002/aelm.202500093","url":null,"abstract":"Zinc phosphorus trisulfide (ZnPS3), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. Its optical and structural properties are explored under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). The experimental results identify a pressure-induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS3 demonstrates robust stability across a broad pressure range up to 24.5 GPa. DFT calculations support these observations and further predict a semiconductor-to-semimetal transition at 100 GPa, while PL measurements reveal defect-assisted emission that quench under pressure due to enhanced non-radiative recombination. At cryogenic temperatures, PL quenching intensifies as non-radiative processes dominate, driven by a rising Grüneisen parameter and reduced phonon population. Cryogenic X-ray diffraction (XRD) also reveals a high mean thermal expansion coefficient (TEC) of (4.369 ± 0.393) × 10−5 K−1, among the highest reported for 2D materials. This unique combination of tunable electronic properties under low pressure and high thermal sensitivity makes ZnPS3 a strong candidate for sensing applications in extreme environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 13","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500093","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-Induced Polarization Rotation in Freestanding Ferroelectric Oxide Membranes 独立铁电氧化膜中应变诱导的极化旋转

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-27 DOI: 10.1002/aelm.202500266

Alban Degezelle, Razvan Burcea, Pascale Gemeiner, Maxime Vallet, Brahim Dkhil, Stéphane Fusil, Vincent Garcia, Sylvia Matzen, Philippe Lecoeur, Thomas Maroutian

{"title":"Strain-Induced Polarization Rotation in Freestanding Ferroelectric Oxide Membranes","authors":"Alban Degezelle, Razvan Burcea, Pascale Gemeiner, Maxime Vallet, Brahim Dkhil, Stéphane Fusil, Vincent Garcia, Sylvia Matzen, Philippe Lecoeur, Thomas Maroutian","doi":"10.1002/aelm.202500266","DOIUrl":"10.1002/aelm.202500266","url":null,"abstract":"Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e., piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weigh their respective contributions for a given membrane geometry, the strain profile has to be mapped with respect to the ferroelectric polarization landscape, a necessary step to allow for a controlled tailoring of the latter. In this study, the effect of bending strain on a Pb(Zr,Ti)O3 membrane is examined in a fold-like structure, observing a polarization rotation from out-of-plane to in-plane at the fold apex. Combining piezoresponse force microscopy, Raman spectroscopy, and scanning transmission electron microscopy, the ferroelectric polarization direction is mapped relative to the height profile of the membrane and the contributions of strain and strain gradients for this archetypal fold geometry are discussed. These findings offer new insights into strain-engineered polarization configurations and emphasize strain effects at the nanoscale to tune the functional properties in freestanding membranes beyond conventional electrical methods.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500266","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144503616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Full-Color n-i-p Perovskite Light-Emitting Diodes Based on SnO2 基于SnO2的全彩色n - i - p钙钛矿发光二极管

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-06-26 DOI: 10.1002/aelm.202500313

Jianhong Wu, Dongmin Qian, Ruishan Wang, Yuxiao Cai, Yangyang Guo, Fuyi Zhou, Xiaopeng Liang, Lin Zhu, Nana Wang, Yu Cao, Jianpu Wang

{"title":"Full-Color n-i-p Perovskite Light-Emitting Diodes Based on SnO2","authors":"Jianhong Wu, Dongmin Qian, Ruishan Wang, Yuxiao Cai, Yangyang Guo, Fuyi Zhou, Xiaopeng Liang, Lin Zhu, Nana Wang, Yu Cao, Jianpu Wang","doi":"10.1002/aelm.202500313","DOIUrl":"10.1002/aelm.202500313","url":null,"abstract":"Perovskite light-emitting diodes (LEDs) have achieved their highest efficiency with an n-i-p device structure, utilizing n-type ZnO as the electron transport layer. The exceptional device efficiency is highly dependent on the interfacial reaction between ZnO and perovskite intermediates, which promotes the formation of high-quality perovskite films. However, achieving green and blue perovskite LEDs with this n-i-p device structure remains a challenge, which hinders the fabrication of full-color perovskite LED arrays with a consistent device structure. This challenge stems from the vigorous interfacial reaction between ZnO and bromine/chlorine-based perovskites compared to iodine-based perovskites during the crystallization process. Here, n-i-p perovskite LEDs with enhanced device performance on a relatively stable n-type SnO2 layer are demonstrated. The near-infrared perovskite LEDs based on SnO2 reach a peak external quantum efficiency of 21.2%. More importantly, this approach enables the realization of full-color n-i-p perovskite LEDs, offering significant potential for streamlining the manufacturing process of full-color displays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500313","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0