Advanced Electronic Materials最新文献_第10页

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films 铁电 Wurtzite Al1-xScxN 薄膜的物理学原理

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-19 DOI: 10.1002/aelm.202400279

Feng Yang

{"title":"Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films","authors":"Feng Yang","doi":"10.1002/aelm.202400279","DOIUrl":"https://doi.org/10.1002/aelm.202400279","url":null,"abstract":"Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 µC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−¹), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"190 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142245734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical-Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas 利用二维电子气体实现具有可调隧道间隙和更佳开关均匀性的垂直开关导电桥式随机存取存储器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-18 DOI: 10.1002/aelm.202400650

Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang

{"title":"Vertical-Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas","authors":"Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang","doi":"10.1002/aelm.202400650","DOIUrl":"https://doi.org/10.1002/aelm.202400650","url":null,"abstract":"Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random-access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode (BE) in a vertical-switching CBRAM (V-CBRAM), filament formation and rupture can be effectively managed and the tunnel gap distance created by partial filament formation can be adjusted. The 2DEG BE induces partial filament formation by limiting the number of electrons required for this process in the V-CBRAM device, as verified via current fitting to the quantum point contact model. Varying the electron concentration and activation energy for electrons trapped in the 2DEG, when paired with various programming voltages, leads to transitions in the device resistance state via changes in the distance of the tunnel gap. This tunnel-gap-tunable 2DEG V-CBRAM device, which exhibits superior switching uniformity, can be employed for nonvolatile memory applications in the sub-G0 conductance regime, such as 3-bit multilevel cells and selector-less memory.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Combined Electrostatic and Strain Engineering of BiFeO3 Thin Films at the Morphotropic Phase Boundary 各向同性相界处的 BiFeO3 薄膜静电和应变工程相结合

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-18 DOI: 10.1002/aelm.202400185

Johanna Nordlander, Bastien F. Grosso, Marta D. Rossell, Aline Maillard, Bixin Yan, Elzbieta Gradauskaite, Nicola A. Spaldin, Manfred Fiebig, Morgan Trassin

{"title":"Combined Electrostatic and Strain Engineering of BiFeO3 Thin Films at the Morphotropic Phase Boundary","authors":"Johanna Nordlander, Bastien F. Grosso, Marta D. Rossell, Aline Maillard, Bixin Yan, Elzbieta Gradauskaite, Nicola A. Spaldin, Manfred Fiebig, Morgan Trassin","doi":"10.1002/aelm.202400185","DOIUrl":"https://doi.org/10.1002/aelm.202400185","url":null,"abstract":"Multiferroic BiFeO3 exhibits a morphotropic phase boundary at large compressive strain that merges metastable phases of tetragonal (T) and rhombohedral (R) character resulting in giant ferroelectric and electromechanical responses. To utilize this functionality in devices, it is essential to understand the response of these ferroelectric phases to the environment of a nanoscale heterostructure. Here, the emergence of ferroelectricity near the morphotropic phase boundary in BiFeO3 is explored directly during thin-film growth, using optical second harmonic generation. It is found that the epitaxial films form at the growth temperature purely in the T phase with zero critical thickness for the spontaneous polarization. Signatures of monoclinic T-like and R-like phases only appear upon sample cooling. The robustness of a single-domain configuration in the high-temperature T phase is furthermore demonstrated during growth of capacitor-like metal | ferroelectric | metal heterostructures. Here, a reduction in tetragonality, rather than multidomain formation, lowers the electrostatic energy in the few-unit-cell thickness regime. For this lower tetragonality, density-functional calculations and scanning transmission electron microscopy point to the stabilization of a novel metastable monoclinic structure upon cooling toward room temperature. The synergistic combination of strain and electrostatic phase stabilization in BiFeO3 heterostructures hence provides a basis for designing new ferroelectric phases and ultrathin ferroelectric devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"98 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation of Conjugated Polymer Monolayer Networks on Water Surface and Nonlinear Charge Transport 水面共轭聚合物单层网络的形成与非线性电荷传输

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-17 DOI: 10.1002/aelm.202400427

Yuya Ishizaki-Betchaku, Naoki Hara, Taikai Matsuda, Jun Matsui, Takahiro Seki, Shusaku Nagano

{"title":"Formation of Conjugated Polymer Monolayer Networks on Water Surface and Nonlinear Charge Transport","authors":"Yuya Ishizaki-Betchaku, Naoki Hara, Taikai Matsuda, Jun Matsui, Takahiro Seki, Shusaku Nagano","doi":"10.1002/aelm.202400427","DOIUrl":"https://doi.org/10.1002/aelm.202400427","url":null,"abstract":"Material-networked conduction paths provide nonlinear electronic properties, which are essential components of computing and physically mimic the brain. In this study, the formation of conjugated polymer monolayer networks and their nonlinear charge transport is demonstrated. Poly(3-hexylthiophene) (P3HT) monolayer networks doped with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) is fabricated using the co-spread method with an amphiphilic liquid crystal molecule at the air–water interface. Atomic force microscopy and Ultraviolet–visible–near-infrared absorption spectroscopy measurements reveal the network surface morphologies and doped electronic states. The correlation between the nonlinear electronic characteristics and network structures of the P3HT/F4TCNQ monolayer networks is further systematically investigated through current–voltage and voltage–time measurements for various doping levels, network densities, and numbers of transferred layers. The current–voltage characteristics of the P3HT/F4TCNQ monolayer network device with a simple two-terminal structure exhibit nonlinear and ohmic conduction behavior, which depend strongly on the network density and geometric dimension (number of transferred layers). It is concluded that the nonlinear properties arise from the limited and unique network of 2D conduction passes. This study highlights the unique features of conducting polymer monolayer networks, paving the way for neuromorphic device applications including conjugated semiconducting polymer-based material reservoirs with controllable nanostructures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"63 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors 基于有机异质结光电突触晶体管的增强型仿生人工视觉系统

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-17 DOI: 10.1002/aelm.202400632

Haonan Wang, Wandi Chen, Wenjuan Su, Zhenyou Zou, Shuchen Weng, Xiongtu Zhou, Chaoxing Wu, Tailiang Guo, Yongai Zhang

{"title":"Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors","authors":"Haonan Wang, Wandi Chen, Wenjuan Su, Zhenyou Zou, Shuchen Weng, Xiongtu Zhou, Chaoxing Wu, Tailiang Guo, Yongai Zhang","doi":"10.1002/aelm.202400632","DOIUrl":"https://doi.org/10.1002/aelm.202400632","url":null,"abstract":"Artificial visual systems, inspired by the human eye, hold significant potential in artificial intelligence. Optoelectronic synapses, integrating image perception, processing, and memory in a single device, offer promising solutions. The human eye exhibits different recognition accuracies for objects under varying light conditions. Therefore, a more biomimetic visual system is needed to better fit actual application scenarios. Here, an organic heterojunction-based optoelectronic synaptic transistor (OHOST) is proposed to enhance biomimetic artificial visual systems. By utilizing the excellent carrier capture ability of core-multi-shell quantum dots (QDs) and the high exciton dissociation efficiency of heterojunction interfaces, the device achieves a recognition capability under different light intensities closely resembling that of the human eye. Under optimal light intensity, the recognition accuracy for the modified national institute of standards and technology (MNIST) dataset can reach 91.52%. Nevertheless, under both low and high light intensities, the accuracy drops to a low level. This work pushes the development of artificial visual systems toward higher levels of biomimicry.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films 分子铁电薄膜中的本征稳定带电畴壁

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-17 DOI: 10.1002/aelm.202400324

Xin Li, Cheng Li, Linming Zhou, Xiangwei Guo, Yuhui Huang, Hui Zhang, Shurong Dong, Yongjun Wu, Zijian Hong

引用次数: 0

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition 通过空间原子层沉积实现具有厚度梯度薄膜的金属-绝缘体-绝缘体-金属 (MIIM) 二极管的组合优化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-17 DOI: 10.1002/aelm.202400093

Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Louis‐Vincent Delumeau, Viet Huong Nguyen, AlRasheed Ali, Mutabe Aljaghtham, Ali Alamry, Dogu Ozyigit, Mustafa Yavuz, Kevin P. Musselman

{"title":"Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition","authors":"Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Louis‐Vincent Delumeau, Viet Huong Nguyen, AlRasheed Ali, Mutabe Aljaghtham, Ali Alamry, Dogu Ozyigit, Mustafa Yavuz, Kevin P. Musselman","doi":"10.1002/aelm.202400093","DOIUrl":"https://doi.org/10.1002/aelm.202400093","url":null,"abstract":"Metal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al2O3 films with orthogonal gradient directions, producing 414 MIIM diodes with 414 different ZnO/Al2O3 film‐thickness combinations on a single substrate for combinatorial and high‐throughput optimization. The nm‐scale ZnO/Al2O3 films are printed in only 2 min and the entire device fabrication takes 7 h, which is much less than conventional approaches for investigating many insulator‐thickness combinations. Rapid identification of the optimal thickness combination is demonstrated; high‐performance diodes (asymmetry = 227, nonlinearity = 13.1, and responsivity = 12 A/W) are observed when a trap‐assisted tunneling mechanism is dominant for insulator thicknesses of 3.4–4.4 nm (ZnO) and 7.4 nm (Al2O3).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142236482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Training-Augmented Ionic Switch for Logic Signal Modulation 用于逻辑信号调制的训练增强离子开关

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-12 DOI: 10.1002/aelm.202400408

Rui Jia, Xiaozheng Duan, Kaige Wang, Fengqiang Sun, Teng Li, Zhu Chen, Le Wang, Gang Wang, Liang-Wen Feng, Hengda Sun, Meifang Zhu

{"title":"Training-Augmented Ionic Switch for Logic Signal Modulation","authors":"Rui Jia, Xiaozheng Duan, Kaige Wang, Fengqiang Sun, Teng Li, Zhu Chen, Le Wang, Gang Wang, Liang-Wen Feng, Hengda Sun, Meifang Zhu","doi":"10.1002/aelm.202400408","DOIUrl":"https://doi.org/10.1002/aelm.202400408","url":null,"abstract":"Efficient ionic conductivity switching is crucial for the progression of iontronics, where adaptability and dynamic control are desirable to the innovation of intelligent devices. One of the main challenges in the field is to develop materials that not only transit between distinct conductive states but also exhibit evolvable properties to enhance their functional capabilities. Addressing this, a reversible phase-transition hydrated salt crystal ionic gel (RPSIG) for innovative ionic switch design is introduced. The RPSIG demonstrates an exceptional ability to modulate its ionic conductivity, with a switching ratio able to reach 5000-fold after training. The training effect can be attributed to the enhanced synergistic interplay between crystallites and the polymer matrix, which leads to thermodynamic stabilization of the interfacial structure and induces a higher energy cost for ion migrations. Meanwhile, the RPSIG exhibits the capability to adjust its resistive-capacitive properties in response to phase transitions, making it a versatile component for signal processing. Further application of RPSIG in intelligent latches and multifunctional hybrid circuits enables effective logic signal transmission, highlighting its potential in pioneering the development of advanced iontronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142171175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning the Resistance of a VO2 Junction by Focused Laser Beam and Atomic Force Microscopy 通过聚焦激光束和原子力显微镜调节 VO2 结的电阻

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-11 DOI: 10.1002/aelm.202400249

Zhuoqun Fang, Melissa Alzate-Banguero, Amit R. Rajapurohita, Forrest Simmons, Erica W. Carlson, Zhuoying Chen, Lionel Aigouy, Alexandre Zimmers

{"title":"Tuning the Resistance of a VO2 Junction by Focused Laser Beam and Atomic Force Microscopy","authors":"Zhuoqun Fang, Melissa Alzate-Banguero, Amit R. Rajapurohita, Forrest Simmons, Erica W. Carlson, Zhuoying Chen, Lionel Aigouy, Alexandre Zimmers","doi":"10.1002/aelm.202400249","DOIUrl":"https://doi.org/10.1002/aelm.202400249","url":null,"abstract":"Vanadium Dioxide (VO2) is a material that exhibits a phase transition from an insulating state to a metallic state at ≈68 °C. During a temperature cycle consisting of warming followed by cooling, the resistivity of VO2 changes by several orders of magnitude over the course of the hysteresis loop. Using a focused laser beam (λ = 532 nm), it is shown that it is possible to optically generate micron-sized metallic patterns within the insulating phase of a VO2 planar junction which can be used to tune, on demand, the resistance of the VO2 junction. A resistor network simulation is used to characterize the resulting resistance drops in the devices. These patterns persist while the base temperature is held constant within the hysteretic region while being easily removed totally by simply lowering the base temperature. Surprisingly, it is also observed that the pattern can be partially erased using an atomic force microscope (AFM) tip on the submicron scale. This erasing process can be qualitatively explained by the temperature difference between the VO2 surface and the tip which acts as a local cooler. This optical and AFM resistive fine-tuning offers the possibility of creating controllable synaptic weights between room-temperature VO2 neuristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy 利用亚氧化物分子束外延技术在生产线后端温度下制造全透明外延氧化物薄膜晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-09-11 DOI: 10.1002/aelm.202400499

Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun-Li Shang, Huacheng Ye, Yu-Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi-Kui Liu, Darrell G. Schlom

{"title":"Fully Transparent Epitaxial Oxide Thin-Film Transistor Fabricated at Back-End-of-Line Temperature by Suboxide Molecular-Beam Epitaxy","authors":"Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun-Li Shang, Huacheng Ye, Yu-Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi-Kui Liu, Darrell G. Schlom","doi":"10.1002/aelm.202400499","DOIUrl":"https://doi.org/10.1002/aelm.202400499","url":null,"abstract":"Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back-end-of-line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data-intensive computing architectures that overcome the scaling challenges of today's integrated circuits. A recently developed variant of molecular-beam epitaxy (MBE) called suboxide MBE (S-MBE) is demonstrated to be capable of growing epitaxial In2O3 at BEOL temperatures with unmatched crystal quality. The fullwidth at halfmaximum of the rocking curve is 0.015° and, thus, ≈5x narrower than any reports at any temperature to date and limited by the substrate quality. The key to achieving these results is the provision of an In2O beam by S-MBE, which enables growth in adsorption control and is kinetically favorable. To benchmark this deposition method for TFTs, rudimentary devices were fabricated.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0