Advanced Electronic Materials最新文献

{"title":"Highly Robust Double Memristive Device Based on Perovskite/Molybdenum Oxide‐Sulfide Compound Heterojunction System","authors":"Gion Kalemai, Apostolos Verykios, Georgios Chatzigiannakis, Polychronis Tsipas, Athanasios Dimoulas, Vassilis Psycharis, Elias Sakellis, Nikos Boukos, Vlassis Likodimos, Ioannis Karatasios, Michael‐Alexandros Kourtis, Konstantinos Aidinis, Alexander Chroneos, Abd Rashid bin Mohd Yusoff, Panagiotis Argitis, Dimitris Davazoglou, Maria Vasilopoulou, Anastasia Soultati","doi":"10.1002/aelm.202400433","DOIUrl":"https://doi.org/10.1002/aelm.202400433","url":null,"abstract":"Halide organic–inorganic perovskites (HOIPs) are a promising class of materials for neuromorphic computing and processing systems demonstrating a variety of resistive switching (RS) mechanisms. HOIPs have been used as active layers in two‐ and three‐terminal synaptic devices reporting high performance in metrics of speed and energy consumption. Nevertheless, halide perovskites suffer from poor ambient stability and reproducibility. In this work, a highly robust double memristor based on two active layers forming a stacking heterojunction is demonstrated. In particular, the functional layer consists of a molybdenum oxide‐molybdenum sulfide compound (MoO<jats:sub>3</jats:sub>‐MoS<jats:sub>2</jats:sub>) and a quadruple cation perovskite (RbCsMAFA) deposited on top showing favorable band alignment for the specific application. The double memristor based on the MoO<jats:sub>3</jats:sub>‐MoS<jats:sub>2</jats:sub>/RbCsMAFA heterojunction exhibits impressive and stable resistive switching behavior with endurance of 100 cycles, high retention of 2 × 10<jats:sup>4</jats:sup> s, high environmental stability maintaining its memristive behavior for 1 month, and excellent artificial synaptic functions. The robust device also exhibits good thermal stability maintaining the memristive characteristics at 85 °C, as well as good photonic memristive behavior with an improved ON/OFF ratio under constant illumination. Here it is proven that the proposed double memristor is a promising candidate for artificial synapses and neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current","authors":"Chunlin Qu, Isha Maini, Qing Guo, Alastair Stacey, David A. J. Moran","doi":"10.1002/aelm.202400770","DOIUrl":"https://doi.org/10.1002/aelm.202400770","url":null,"abstract":"In this work, a new Field Effect Transistor device concept based on hydrogen‐terminated diamond (H‐diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement‐mode operation and high on‐current with improved channel charge mobility compared to Transfer‐Doped equivalents. Electron‐beam evaporated Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is used on H‐diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high‐quality H‐diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high‐density hole accumulation layer by gating the entire device channel which is encapsulated in dual‐stacks of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage &lt; −6 V with on‐current &gt; 80 mA mm<jats:sup>−1</jats:sup>. Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10<jats:sup>12</jats:sup> cm<jats:sup>−2</jats:sup> and increased hole mobility of 110 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> in comparison with more traditional Transfer‐Doped H‐diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H‐diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025)","authors":"Yunwei Ma,&nbsp;Yuan Qin,&nbsp;Matthew Porter,&nbsp;Joseph Spencer,&nbsp;Zhonghao Du,&nbsp;Ming Xiao,&nbsp;Boyan Wang,&nbsp;Yifan Wang,&nbsp;Alan G. Jacobs,&nbsp;Han Wang,&nbsp;Marko Tadjer,&nbsp;Yuhao Zhang","doi":"10.1002/aelm.202570001","DOIUrl":"10.1002/aelm.202570001","url":null,"abstract":"<p><b>Multidimensional Power Devices</b></p><p>Ultra-wide bandgap semiconductors are promising for power applications in grid and renewable energy systems. In article number 2300662, Yuhao Zhang and co-authors demonstrate nickel oxide as a p-type material with tunable doping and high field. The 8000 V charge-balance device shows a record high average electric field.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025)","authors":"Xian-Hu Zha,&nbsp;Yu-Xi Wan,&nbsp;Shuang Li,&nbsp;Dao Hua Zhang","doi":"10.1002/aelm.202570002","DOIUrl":"10.1002/aelm.202570002","url":null,"abstract":"<p><b>Ternary Ultra-Wide Bandgap Semiconductors</b></p><p>In article number 2400547, Dao Hua Zhang and co-workers show that low energy level and flat band dispersion at valence band maximum (VBM) restricts the <i>p</i>-type conduction of β-Ga₂O₃. Here, β₃B₂;-Ga₂O₃-based new type ternary ultra-wide bandgap semiconductors: β-(Rh_xGa_1−x)₂O₃'s alloys with <i>x</i> from 0 to 0.5 are reported. The energy and band-dispersion curvature of β-Ga₂O₃'s VBM are significantly enhanced via Rh-alloying. The bandgaps of β-(Rh_xGa_1−x)₂O₃ are still much larger than that in commercial silicon carbide. The β-(Rh_xGa_1−x)₂O₃ can be candidate semiconductors for a new generation of optoelectronics and power electronics.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials","authors":"","doi":"10.1002/aelm.202400958","DOIUrl":"10.1002/aelm.202400958","url":null,"abstract":"&lt;p&gt;As we mark the 10th anniversary of Advanced Electronic Materials, it is an ideal moment to pause and reflect on the incredible journey that has shaped this journal into a leading platform for innovation and cutting-edge research in the field of electronic materials. From its humble beginnings in 2015 to its current position as one of the most respected journals in the field, the past decade has been one of extraordinary growth, collaboration, and scientific advancement. In particular, as a platform for publishing significant studies on the design, fabrication, and application of electronic materials in emerging technologies, the journal serves a broad geographical authorship covering a wide spectrum of topics.&lt;/p&gt;&lt;p&gt;&lt;/p&gt;&lt;p&gt;When Advanced Electronic Materials was launched ten years ago, the landscape of materials science, especially electronic materials, was rapidly evolving. The innovations in semiconductors, neuromorphic architecture, magnetic materials, flexible electronics, topological and superconducting compounds, and other critical technologies have revolutionized the fields of computing and software development, as well as the fields of bioelectronics and biomedical engineering. Our goal for the journal was clear: to provide a premier platform where the most impactful and pioneering research on advanced materials for applications in electronics could be published and disseminated to drive the next wave of technological advancement.&lt;/p&gt;&lt;p&gt;As we reflect on the journal's journey, it is evident that we have surpassed our initial goals. Launched by a team of qualified and professional editors, along with a well-trusted academic advisory editorial board, the journal Advanced Electronic Materials has been there every step of the way, publishing interdisciplinary research, from collaborative works bridging physics, chemistry, and engineering, to studies examining real-world applications.&lt;/p&gt;&lt;p&gt;More closely, the most cited articles in 10 years include a research article authored by Y. Gogotsi et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;1&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; reporting the fabrication of Field Effect Transistors (FETs) based on monolayer Ti&lt;sub&gt;3&lt;/sub&gt;C&lt;sub&gt;2&lt;/sub&gt;T&lt;sub&gt;x&lt;/sub&gt; flakes exhibiting high field-effect electron mobility, a review article by J. Y. Tsao et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;2&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; on ultrawide bandgap semiconductors and a review article by H. Shi et al.&lt;sup&gt;[&lt;/sup&gt;&lt;span&gt;&lt;sup&gt;3&lt;/sup&gt;&lt;/span&gt;&lt;sup&gt;]&lt;/sup&gt; summarizing approaches for improving the electrical conductivity of one of the most used conducting polymers:PEDOT:PSS (see all listed in &lt;b&gt;Table&lt;/b&gt; 1).&lt;/p&gt;&lt;p&gt;We have also seen a marked increase in international collaborations, with authors and readers from around the globe contributing to enlightening the role of advanced materials in solving some of the world's most pressing technological challenges. These studies are often the result of cross-disciplinary teams that have worked together to push the boundaries of what is","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400958","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freestanding Membranes of Titania Nanorods, Photocatalytically Reduced Graphene Oxide, and Silk Fibroin: Tunable Properties and Electrostatic Actuation","authors":"Finn Dobschall, Hauke Hartmann, Sophia Caroline Bittinger, Norbert Schulz, Hendrik Schlicke, Hoc Khiem Trieu, Tobias Vossmeyer","doi":"10.1002/aelm.202400602","DOIUrl":"https://doi.org/10.1002/aelm.202400602","url":null,"abstract":"In this study, the mechanical properties of freestanding membranes made of graphene oxide (GO), titania nanorods (TNRs), and silk fibroin (SF) are investigated and their application is demonstrated as electrostatically driven actuators. Using a stamping process, the membranes are transferred onto substrates with circular apertures or square cavities measuring ∼80 to 245 µm in diameter or edge length, respectively. Afterwards, the membranes are exposed to deep-UV (DUV) radiation in order to photocatalytically convert GO to reduced graphene oxide (rGO). Microbulge tests combined with atomic force microscopy (AFM) measurements reveal enhanced mechanical stability after the DUV treatment, as indicated by an increase of Young's modulus from ∼22 to ∼35 GPa. The toughness of the DUV-treated membranes is up to ∼1.25 MJ m⁻³, while their ultimate biaxial tensile stress and strain are in the range of ∼377 MPa and ∼0.68%, respectively. Further, by applying voltages of up to ±40 V the membranes are electrostatically actuated and deflected by up to ∼1.7 µm, as determined via in situ AFM measurements. A simple electrostatic model is presented that describes the deflection of the membrane as a function of the applied voltage very well.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"98 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional Native Defects Boosting the Thermoelectric Transport in Few-Layer PdPS","authors":"Zehao Yu, Meilin Li, Yu Yang, Peng Yu, Ady Suwardi, Lifa Zhang, Yunshan Zhao","doi":"10.1002/aelm.202400634","DOIUrl":"https://doi.org/10.1002/aelm.202400634","url":null,"abstract":"As a unique Cairo pentagonal 2D material, palladium phosphide sulfide (PdPS) has garnered immense interests due to its excellent optoelectronic properties, anisotropic electronic transport behavior, and good air-stability. In addition, its puckered pentagon structure renders an ultralow thermal conductivity, making it a promising candidate for thermoelectrics applications. However, its thermoelectric transport has not been studied until now due to challenges in obtaining the atomic thin PdPS flake and further measurement. In this work, the thermoelectric performance of 2D PdPS is investigated. It is found that thermoelectric property of PdPS can be effectively manipulated via the delicate annealing treatment, which effectively regulate the defect concentrations. Remarkably, beyond regulating carrier concentrations and shifting the Fermi level closer to the conduction band, these defects also produce a large number of defect states. Consequently, ultra-high power factor of 0.648 mWm⁻¹K⁻² at room temperature is achieved, outperfoming other 2D materials reported to date. Furthermore, the anisotropic electronic transport properties of few-layer PdPS are further studied and an extremely high electron anisotropic ratio of 47.37 are obtained at 20 K. The findings provide a new pathway for the development of nanoelectronic devices based on emerging 2D materials with high electronic anisotropy and thermoelectric performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance n-type Organic Thermoelectric Aerogels Toward Flexible Energy Harvesting and Sensing Devices","authors":"Chan Zhang, Xi Liu, Shaobo Han, Menxing Wu, Runfeng Xiao, Shangzhi Chen, Guangming Chen","doi":"10.1002/aelm.202400824","DOIUrl":"https://doi.org/10.1002/aelm.202400824","url":null,"abstract":"Thermoelectric generators are one type of energy device widely used for wearable and flexible electronics to provide power to other devices. Organic aerogels with excellent thermoelectric and mechanical properties are promising candidates for such applications, but most of high-performance organic aerogels are made of p-type materials. It remains a great challenge to develop a low-cost and air-stable n-type organic aerogels with comparable performance with the state-of-the-art p-type counterparts to form an efficient thermoelectric power generator. In this study, a novel strategy based on a cellulose nanofiber skeleton is developed to form a high-performance n-type organic aerogel. The obtained n-type organic aerogels possess a Seebeck coefficient of −17 µV K⁻¹ and can combine with their p-type counterparts to form a generator outputting 1 µW with a temperature difference of 50 K. Using the n-type organic aerogels, dual-parameter pressure and temperature sensing with high precision and reproducibility can be realized. The n-type aerogel will find its applications not only for outdoor self-powered systems, but also for human health diagnosis systems with real-time monitoring of multiple parameters without crosstalk.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Progresses and Frontiers in Ultrawide Bandgap Semiconductors","authors":"Siddharth Rajan,&nbsp;Xiaohang Li","doi":"10.1002/aelm.202400934","DOIUrl":"10.1002/aelm.202400934","url":null,"abstract":"&lt;p&gt;The field of ultra-wide bandgap (UWBG) semiconductors is experiencing a transformative era, driven by the relentless pursuit of materials and technologies that promise to revolutionize power electronics, optoelectronics, and beyond. This special issue brings together a collection of pioneering review and research articles that highlight the latest advancements and future directions in UWB semiconductor technology.&lt;/p&gt;&lt;p&gt;The articles compiled in this issue underscore the remarkable potential of UWBG semiconductors to address critical challenges in materials science and device engineering. From deep ultraviolet optoelectronics to high-temperature electronic applications, the research demonstrates the versatility and unprecedented performance characteristics of these advanced materials. The diversity of approaches represented here is also striking. Researchers have explored multiple material systems—including AlGaN, Ga2O3, and novel oxide semiconductors—each offering unique capabilities that extend the boundaries of traditional semiconductor technologies. The breadth of investigations ranges from fundamental material characterization to device engineering, reflecting the interdisciplinary nature of modern materials research.&lt;/p&gt;&lt;p&gt;In “Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals” (aelm.202300428), P. Seyidov and co-authors investigate the thermal stability of Schottky contacts (Au, Pt, Ni) on β-Ga2O3 single crystals. The study reveals critical insights into defect levels and material behavior under thermal stress, identifying defect levels and discussing the rearrangement and dissociation of hydrogen in Ga-O divacancy complexes. These findings are essential for understanding the reliability and performance of β-Ga2O3-based devices under high-temperature conditions.&lt;/p&gt;&lt;p&gt;In “Discovery of a Robust p-type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8” (aelm.202300550), H. Zhao and co-authors introduce a novel p-type UWBG oxide semiconductor with a bandgap of ≈5.36 eV. Utilizing mist-chemical vapor deposition (M-CVD), the study demonstrates robust p-type conductivity with a wide range of hole concentrations. This discovery opens new avenues for creating efficient and robust electronic and optoelectronic devices.&lt;/p&gt;&lt;p&gt;In “Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices” (aelm.202300662), Y. Zhang and co-authors explore the modulation of acceptor concentration (NA) in NiO by controlling the oxygen partial pressure during magnetron sputtering. The study reveals a tunable acceptor concentration, with practical breakdown fields (EB) ranging from 3.8 to 6.3 MV cm⁻&lt;sup&gt;1&lt;/sup&gt;. These findings highlight the potential of NiO as a p-type material for power devices, enabling performance beyond conventional limits.&lt;/p&gt;&lt;p&gt;In “Material Properties of n-type β-Ga2O3 Epilayers with In-Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition” (aelm.202300679),","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400934","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CMOS-Compatible HfOx-Based Radiation Hardening Component for Neuromorphic Computing Applications","authors":"Yao-Feng Chang, Yifu Huang, Chin-Han Chung, Ying-Chen Chen","doi":"10.1002/aelm.202400823","DOIUrl":"https://doi.org/10.1002/aelm.202400823","url":null,"abstract":"HfOx-based resistive random-access-memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS-compatible materials (ruthenium (Ru)) and lithography-lite process, potentially enabling a maskless, etching-free process that can be implemented in the low earth orbit (LEO), the International Space Station (ISS), and commercial LEO destinations (CLDs). The devices met the requirements for qualified manufacturers list verification (QMLV) and radiation hardness assurance (QMLV-RHA), as well as Advanced Next Generation Strategic Radiation, hardened Memory (ANGSTRM), which potentially support LEO, medium earth orbit, and geosynchronous orbit missions. Specifically, after a 5-Mrad total ionizing dose (TID) test, the electrical characterized results showed non-degradation performance, memory window ≈40 with operation power &lt; mW, capability of &gt; 000-times endurance and 15-year retention. The Ruthenium oxide (RuOx) can serve as a photon-absorb sink to reduce the switching layer damage caused by heating induced by radiation, supported by Particle and Heavy Ion Transport Code System Monte Carlo simulation. Furthermore, the neural network by HfOx/RuOx-based ReRAM device is trained with the inference accuracy at various TIDs for a potential neuromorphic hardware system demonstration. The results show that HfOx/RuOx-based ReRAM neuromorphic computing is quite robust as a radiation-hardened structure, providing a development path to realize programmable computing chip tolerance under irradiation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142911871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}