Advanced Electronic Materials最新文献_第9页

Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics 用于柔性和可穿戴电子产品的喷墨印刷多功能石墨烯传感器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-16 DOI: 10.1002/aelm.202400689

Feiran Wang, Charles E. D. Heaton, Nathan D. Cottam, Jonathan S. Austin, Jisun Im, T. Mark Fromhold, Ricky D. Wildman, Richard J. M. Hague, Christopher J. Tuck, Oleg Makarovsky, Lyudmila Turyanska

{"title":"Inkjet Printed Multifunctional Graphene Sensors for Flexible and Wearable Electronics","authors":"Feiran Wang, Charles E. D. Heaton, Nathan D. Cottam, Jonathan S. Austin, Jisun Im, T. Mark Fromhold, Ricky D. Wildman, Richard J. M. Hague, Christopher J. Tuck, Oleg Makarovsky, Lyudmila Turyanska","doi":"10.1002/aelm.202400689","DOIUrl":"https://doi.org/10.1002/aelm.202400689","url":null,"abstract":"The exceptional electrical properties of graphene with high sensitivity to external stimuli make it an ideal candidate for advanced sensing technologies. Inkjet printing of graphene (iGr) can provide a versatile platform for multifunctional sensor manufacturing. Here the multifunctional sensor enabled by combining the design freedom of inkjet printing with the unique properties of graphene networks is reported on. A fully inkjet printed multimaterial device consists of two layers of iGr stripes separated by a dielectric polymeric layer of tripropylene glycol diacrylate (TPGDA). In these devices, the bottom iGr layer, capped with TPGDA, provides temperature sensing, the top uncapped iGr is sensitive to the external atmosphere, while the capacitance between the two iGr layers is sensitive to the applied pressure. The fast, sensitive, and reproducible performance of these sensors are demonstrated in response to environmental stimuli, such as pressure, temperature, humidity, and magnetic field. The devices are capable of simultaneous sensing of multiple factors and are successfully manufactured on a variety of substrates, including Si/SiO2, flexible Kapton films and textiles, demonstrating their potential impact in applications compatible with silicon technologies as well as wearable and healthcare devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoinduced Melting of V4O7 Correlated State 光诱导 V4O7 相关态熔化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400539

Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko

{"title":"Photoinduced Melting of V4O7 Correlated State","authors":"Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko","doi":"10.1002/aelm.202400539","DOIUrl":"https://doi.org/10.1002/aelm.202400539","url":null,"abstract":"The compound V4O7 is one of the Magnéli phase (VnO2n − 1, n = 3, 4, …, 9) correlated vanadium oxides with distinct intriguing electronic and structural properties. The possibility to manipulate the phase state of V4O7 on an ultrafast time scale by light makes this material promising for potential applications in photonics, optoelectronics, quantum, and neuromorphic circuit design. In this work, the ultrafast spectroscopy of V4O7 reveals the second-order nature of the photoinduced insulator-to-metal transition, emphasizing electronic and lattice contributions. The findings reveal the influence of the laser excitation level and temperature on these dynamics, providing a comprehensive understanding of V4O7 structural changes and response to external stimuli. The phenomenological model based on the Landau–Ginzburg formalism provides a robust framework for explaining the photoinduced transition dynamics, showing a detailed picture of the light interaction with the electronic and lattice subsystems. This integrated approach significantly enhances the understanding of V4O7 complex behavior upon photoexcitation, opening new possibilities for developing new optoelectronic devices and noninvasive optical control of the phase transition pathways in vanadates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric-Assisted Ion Dynamics for Prolonged Tactile Cognizance in a Biomimetic Memory-in-Sensor System 铁电辅助离子动力学在仿生传感器记忆系统中的长时间触觉认知

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400550

Ritamay Bhunia, Joo Sung Kim, Hayoung Oh, Dong Jun Kim, Seokyeong Lee, Cheolmin Park, Do Hwan Kim

{"title":"Ferroelectric-Assisted Ion Dynamics for Prolonged Tactile Cognizance in a Biomimetic Memory-in-Sensor System","authors":"Ritamay Bhunia, Joo Sung Kim, Hayoung Oh, Dong Jun Kim, Seokyeong Lee, Cheolmin Park, Do Hwan Kim","doi":"10.1002/aelm.202400550","DOIUrl":"https://doi.org/10.1002/aelm.202400550","url":null,"abstract":"The advancements in developing low-powered artificial tactile cognition devices, inspired by the iontronic-reliant human haptic sensory system, show great potential in future robotics and prosthetics. However, poor tactile memory and the complexity of integrating diverse modules for tactile sensing and neuromorphic functionalities pose a formidable challenge. Here, a mechanoreceptor-inspired tactile memory-in-sensor (TMIS) device is presented, employing ferroelectric-assisted ion dynamics (FAID) in FAID-based synaptic tactile transistor (FAID-STT). This approach improves the long-term memory (LTM) of tactile information while minimizing power consumption, all within a unified device architecture of TMIS. The FAID mechanism intricately combines the release of trapped ions solely under mechanical stress with remnant ferroelectric polarization induced by voltage stimulation, ensuring prolonged memory retention. Consequently, the FAID-STT exhibits a voltage-dependent memory effect stemming from the augmentation of ferroelectric dipole polarization, offering uninterrupted tactile memory for over 12 min without requiring additional power inputs for memory retention.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles 锥体Pt纳米粒子电化学测定茶叶样品中的没食子酸

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400792

Tiziano Di Giulio, Maria Antonieta Ramírez-Morales, Valentina Mastronardi, Giuseppe Mele, Rosaria Brescia, Pier Paolo Pompa, Cosimino Malitesta, Giuseppe Egidio De Benedetto, Mauro Moglianetti, Maria Ada Malvindi, Elisabetta Mazzotta

{"title":"Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles","authors":"Tiziano Di Giulio, Maria Antonieta Ramírez-Morales, Valentina Mastronardi, Giuseppe Mele, Rosaria Brescia, Pier Paolo Pompa, Cosimino Malitesta, Giuseppe Egidio De Benedetto, Mauro Moglianetti, Maria Ada Malvindi, Elisabetta Mazzotta","doi":"10.1002/aelm.202400792","DOIUrl":"https://doi.org/10.1002/aelm.202400792","url":null,"abstract":"Gallic acid (GA) is a natural phenolic compound with significant biological properties, including anti-inflammatory, antioxidant, and anticancer effects. Detecting GA in biological matrices like food and beverages is essential but challenging due to the multitude of GA-like molecules with similar proprieties and functional moieties. In this study, ultra-small (≈4 nm) pyramidal platinum nanoparticles (PtNPs) with a high fraction of {111} surface domains are used to design a new electrochemical sensor for GA detection in tea, which is the most popular manufactured drink consumed in the world. PtNPs are deposited on a glassy carbon electrode (GCE) using a simple drop deposition method, requiring a minimal amount of nanoparticles and, hence, metal precursor. With just 2.7 µg of PtNPs, the sensor demonstrated a linear response in the concentration range from 50 to 600 µm, a detection limit of 16 µm, and a quantification limit of 49 µm. The sensor selectivity is tested against other antioxidant compounds commonly present in tea, consistently showing a higher response for GA. Furthermore, the sensor capability to detect GA in real green and black tea samples is further validated by high-performance liquid chromatography (HPLC) analysis, with high correlation between chromatographic data and sensor response.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks 基于纳米结构金网络的软电子开关和自适应逻辑门

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-13 DOI: 10.1002/aelm.202400717

Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani

{"title":"Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks","authors":"Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani","doi":"10.1002/aelm.202400717","DOIUrl":"https://doi.org/10.1002/aelm.202400717","url":null,"abstract":"The advent of neuromorphic substrates is promoting the development of in materia autonomous and adaptive devices, employed as hardware solutions to reduce the current inefficiencies of traditional data processing techniques, in terms of energy requirements. The integration of data processing capabilities on soft materials is here focused on the development of the edge computing paradigm of interest for soft robotics and wearable devices. For such purposes, gold nanostructured complex networks produced in the gas phase are employed to fabricate neuromorphic devices. The integration of the latter on a soft Polydimethylsiloxane (PDMS) substrate equipped with stretchable laser-induced graphene electrodes, is exploited for the production of in materia devices to bridge the gap between data processing and interaction with the environment. The description and the control of the non-linear, resistive switching electrical properties are demonstrated by the development of soft mechano-responsive electronic switches and soft reconfigurable logic gates. These preserve Boolean functions classifications even under small mechanical perturbations, thanks to the redundant and adaptive connectivity of the gold networks. These results constitute a promising starting point for a fruitful combination of physical and computing intelligence directly integrated on soft systems to efficiently interact with the surrounding scenario.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"117 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142820909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin-Film Assisted Laser Transfer and Bonding (TFA-LTAB) for the Fabrication of Micro-LED Displays 薄膜辅助激光转移和键合（TFA-LTAB）用于微型led显示器的制造

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400380

Taifu Lang, Xin Lin, Xiaowei Huang, Yujie Xie, Shuangjia Bai, Yijian Zhou, Shuaishuai Wang, Yu Lu, Xuehuang Tang, Chang Lin, Zhonghang Huang, Kaixin Zhang, Qun Yan, Jie Sun

{"title":"Thin-Film Assisted Laser Transfer and Bonding (TFA-LTAB) for the Fabrication of Micro-LED Displays","authors":"Taifu Lang, Xin Lin, Xiaowei Huang, Yujie Xie, Shuangjia Bai, Yijian Zhou, Shuaishuai Wang, Yu Lu, Xuehuang Tang, Chang Lin, Zhonghang Huang, Kaixin Zhang, Qun Yan, Jie Sun","doi":"10.1002/aelm.202400380","DOIUrl":"https://doi.org/10.1002/aelm.202400380","url":null,"abstract":"Micro-Light Emitting Diodes (Micro-LEDs) are key components in the field of next-generation display technologies. In the process of making Micro-LED displays, millions of chips need to be transferred to the driver substrate using mass transfer technology. Conventional transfer techniques, such as stamp transfer, present challenges in terms of processing efficiency and applicability due to the need for pre-prepared tethered structures and fixed chip pitch. To overcome these limitations, the t hin-film-assisted laser transfer and bonding (TFA-LTAB) technology is proposed. This technique is able to efficiently and accurately transfer Micro-LEDs from the source substrate to the driver substrate with arbitrary pitch through thin-film assistance, and electrically connects the chips through flip-chip bonding technology, which significantly improves the efficiency and reliability of the transfer and joining. The TFA-LTAB method proposed in this study integrates laser transfer and flip-chip bonding techniques. Through the TFA-LTAB process, these Micro-LEDs cultured on sapphire substrates are precisely assembled onto transparent low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The method successfully achieved mass transfer and bonding of Micro-LEDs with a size of 30 × 15 µm2 at low temperature (180 °C) and low pressure (0.08 MPa).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142815952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric-Double-Layer Gating 电双层门控法观察LaInO3/BaSnO3界面2℃下2000 cm2/V s以上迁移率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400811

Jaehyeok Lee, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, Kookrin Char

引用次数: 0

Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor Weyl半导体中巨非线性霍尔效应诱导的超高整流

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400648

Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay-Rong Chang, Pan He, Jian Shen

{"title":"Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor","authors":"Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay-Rong Chang, Pan He, Jian Shen","doi":"10.1002/aelm.202400648","DOIUrl":"https://doi.org/10.1002/aelm.202400648","url":null,"abstract":"Conventional diode-based rectifiers suffer from limited applicability in low-power electronics and high-frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non-centrosymmetric quantum materials can enable diode-free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low-power and high-frequency applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142809717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure 利用范德华异质结构的光探测和电致发光双功能隧道装置

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400558

Zi-hao Dong, Qi-hang Zhang, Kai Liu, Shao-jie Fu, Xu-Hao Hong, Qian-jin Wang, Yan-qing Lu, Yong-yuan Zhu, Xue-jin Zhang

引用次数: 0

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond 存储类存储器的Ovonic阈值开关选择器技术的进展：从基础到发展和超越

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202400665

Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang

{"title":"Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond","authors":"Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang","doi":"10.1002/aelm.202400665","DOIUrl":"https://doi.org/10.1002/aelm.202400665","url":null,"abstract":"The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide-based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post-treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector-only memory (SOM) is examined, which offers better scalability and performance than the existing one-memory and one-selector structure, which combines an OTS with phase-change memory. Moreover, a cost-effective 3D vertical X-point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0