Advanced Electronic Materials最新文献_第9页

Logic Functionality and Circuit Design of In2Se3-Based Split-Gate Ferroelectric Field-Effect Transistor for Zero-Trust Applications 零信任型分栅铁电场效应晶体管的逻辑功能与电路设计

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-05-27 DOI: 10.1002/aelm.202500871

Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean-François Dayen

{"title":"Logic Functionality and Circuit Design of In2Se3-Based Split-Gate Ferroelectric Field-Effect Transistor for Zero-Trust Applications","authors":"Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean-François Dayen","doi":"10.1002/aelm.202500871","DOIUrl":"10.1002/aelm.202500871","url":null,"abstract":"Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α-In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior. Here, we present α-In2Se3-based ferroelectric semiconductor field-effect transistors (FeS-FETs) with a split-gate architecture that enables multifunctional logic operations. Operating in the high equivalent oxide thickness (EOT) regime, the devices exhibit a clockwise transfer hysteresis with a wide memory window and an on/off ratio above 104. The split-gate design enables independent control over channel segments, allowing implementation of volatile NAND logic and reconfigurable Fe-NAND/Fe-NOR operations. In addition, multilevel conductance states and programmable threshold-voltage shifts are demonstrated, further extending the device functionality toward multi-valued and analog computing. Circuit simulations using a FeS-FET equivalent model show that two devices are connected in parallel, and all elementary Boolean logic functions can be achieved. Notably, the programmed states retain for ∼102 s, a balanced retention window ideally suited for applications in security-focused “zero-trust” environments where temporary data storage and self-erasure are desired.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500871","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148288399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions 不同湿度条件下软阈值逻辑门的传感器内计算

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-03-28 DOI: 10.1002/aelm.202500863

Giacomo Nadalini, Paolo Milani, Francesca Borghi

{"title":"In-Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions","authors":"Giacomo Nadalini, Paolo Milani, Francesca Borghi","doi":"10.1002/aelm.202500863","DOIUrl":"10.1002/aelm.202500863","url":null,"abstract":"In pursuing machine intelligence comparable to biological systems, the crucial role of the body in enabling efficient data processing is often overlooked. In contrast to silicon-based architectures, biological organisms exploit the intrinsic properties of their materials and morphology to support sensing, actuation, and low-energy information processing. This perspective has motivated the development of embodied intelligent systems, where computation emerges from the physical interactions between materials and the environment. Drawing inspiration from these principles, artificial systems can address the challenge to integrate sensing, actuation, and control systems directly within their materials, improving processing efficiency and autonomy, in an unconventional, albeit biologically-inspired strategy. Here we demonstrate how soft nanocomposite materials, based on gold cluster-assembled thin films implanted in polydimethylsiloxane (PDMS) substrate, can perform reliable processing in ambient environmental conditions. We exploit the nonlinear electrical behavior of this material to implement soft reconfigurable nonlinear threshold logic gates able to work in different ambient conditions. In particular, this work investigates how humidity influences the resistive switching and computational capabilities of the nanocomposites, with the goal of developing multifunctional materials that combine their sensing capabilities to environment and mechanical stimuli with computation on a soft substrate able to support adaptive, energy-efficient embodied intelligence for edge computing devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500863","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147523947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications 柔性神经形态器件的二维材料：材料、工程策略、架构和新兴应用

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-08-24 DOI: 10.1002/aelm.70543

Junzhe Tang, Letian Dai

{"title":"Two-Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications","authors":"Junzhe Tang, Letian Dai","doi":"10.1002/aelm.70543","DOIUrl":"10.1002/aelm.70543","url":null,"abstract":"Two-dimensional (2D) materials offer a distinctive foundation for flexible neuromorphic electronics by combining atomically thin structures, mechanical compliance, and tunable electronic, ionic, and interfacial properties. These features are essential for artificial synapses, memristors, synaptic transistors, and bio-inspired devices that require low operating voltage, reduced energy consumption, stable conductance modulation, and reliable operation under mechanical deformation. This review provides a materials-centered analysis of recent progress in 2D-material-based flexible neuromorphic devices. Primary 2D material platforms, including graphene-derived sheets, MXenes, transition-metal dichalcogenides, black phosphorus, and other layered or nanosheet systems, are distinguished from 2D-like CNT-network films and hybrid functional layers and are compared according to their dimensionality, structural form, and device role. Defect engineering, van der Waals heterostructure design, and surface functionalization are then examined as key routes for regulating charge transport, ion migration, synaptic linearity, mechanical robustness, and environmental stability. Flexible memristive devices, synaptic transistors, and bio-integrated neuromorphic systems are further discussed within this material-to-device framework. By clarifying the links among material properties, engineering strategies, device architectures, neuromorphic metrics, and deformation-stable functionality, this review provides mechanism-guided design principles for scalable, energy-efficient, and application-oriented 2D neuromorphic platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70543","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148809822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration 用于能源自主生物电子学的有机电化学晶体管：材料、器件和系统集成

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70550

Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim

{"title":"Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration","authors":"Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim","doi":"10.1002/aelm.70550","DOIUrl":"https://doi.org/10.1002/aelm.70550","url":null,"abstract":"The rapid growth of bio‐integrated electronics, ranging from epidermal wearables to deep‐tissue implants, has created an urgent need for energy‐autonomous systems capable of operating without external power. While conventional silicon‐based devices suffer from poor mechanical compliance and low energy efficiency at biological interfaces, organic electrochemical transistors (OECTs) offer a compelling alternative by combining biocompatibility, low‐voltage operation, and intrinsic signal amplification. This review examines the integration of OECTs with energy harvesting technologies, with a particular focus on self‐powered biosensing. We first outline the fundamental operating principles, highlighting how volumetric capacitance and mixed ionic‐electronic conduction enable high transconductance at low voltages, making OECTs well suited for amplifying weak physiological signals. We then review recent advances in materials and device architectures, emphasizing how organic mixed ionic‐electronic conductors govern energy efficiency and operational stability. The electrolyte plays an active role by regulating ion transport and interfacial capacitance, thereby critically influencing device performance under energy‐autonomous conditions. The core discussion focuses on system‐level integration, where OECTs interface with mechanical (triboelectric and piezoelectric), thermal, and optical energy harvesters. Key challenges, including impedance matching and rectification, are analyzed to optimize sensing performance under harvested energy inputs. Finally, we outline future directions toward fully integrated, battery‐free bioelectronic platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"103 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing 实现无线能量收集、存储和传感的铁离子静电景观

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.202500821

M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro

{"title":"Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing","authors":"M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro","doi":"10.1002/aelm.202500821","DOIUrl":"https://doi.org/10.1002/aelm.202500821","url":null,"abstract":"Controlling electrostatic potential landscapes at the mesoscale is essential for the advancement of adaptive electronic systems. In edge‐gated electrostatic geometries based on ferroionic Li 2.99 B a0.005 OCl films, directional spillover fields and polaron pinning effects generate structured, air‐side electrostatic gradients across centimeter‐scale gaps. A combination of piezoresponse force microscopy (PFM), micrometer‐resolution scanning Kelvin probe (µm‐SKP) analysis, electrochemical impedance spectroscopy (EIS), and temperature‐dependent transport measurements, supported by numerical solutions of the Poisson–Nernst–Planck (PNP) equations, shows dynamic coupling between surface polarization and mobile charge carriers. Apparent surface mobilities in the range of 300–500 cm 2 V −1 s −1 are observed under non‐equilibrium polarization conditions, accompanied by negative static resistance (NSR) and field‐induced carrier asymmetry. These results point to topologically guided conduction paths constrained by interface geometry and electrostatic boundary conditions. Such phenomena enable programmable capacitance zoning and field shaping, with implications for the design of solid‐state transistors and batteries, neuromorphic elements, energy harvesters, and high‐sensitivity sensing platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiO x Memristors 界面氧化还原工程驱动的SiO - x记忆电阻器形成自由本征双极开关

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70568

Biswajit Jana, Indranil Goswami, Ajoy Dinda, Ayan Roy Chaudhuri

{"title":"Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiO x Memristors","authors":"Biswajit Jana, Indranil Goswami, Ajoy Dinda, Ayan Roy Chaudhuri","doi":"10.1002/aelm.70568","DOIUrl":"https://doi.org/10.1002/aelm.70568","url":null,"abstract":"Achieving uniform resistive switching in silicon oxide (SiO x )‐based memristors remains a central challenge due to stochastic electroforming and uncontrolled defect redistribution. Programming the defect landscape through interfacial thermodynamics offers a potential route to suppress this variability. Here we demonstrate a thermodynamic interface‐redox strategy that intrinsically preconditions SiO x memristors and enables forming‐free switching. Deposition of scandium onto SiO x induces a spontaneous interfacial oxidation reaction, forming a stable scandium oxide layer while simultaneously reducing the adjacent SiO x region. This deposition‐driven redox process establishes an equilibrium oxygen‐vacancy reservoir at the interface, effectively defining the defect landscape prior to electrical biasing. The chemically stabilized interfacial layer acts as a predefined nucleation site for conductive filament formation, enabling intrinsic bipolar resistive switching in Sc/SiO x /W devices. The resulting memristors exhibit narrow resistance distributions, endurance exceeding 2 × 10 4 cycles, and retention beyond 10 6 s at 85°C. Unlike conventional oxygen‐scavenging electrodes that rely on dynamic oxygen exchange under high electric fields, the Sc/SiO x interface provides a stable defect reservoir that shifts device operation from stochastic defect generation to controlled vacancy percolation, thereby significantly improving switching uniformity. This interface‐defined defect programming strategy provides a pathway toward reliable SiO x memristors for practical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes 具有成本效益的Ti/Al/Ni多层神经探针，具有与Ti/Au神经探针相当的体内记录性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-08 DOI: 10.1002/aelm.70569

Sehwan Park, Minseok Kim, Giheon Kim, Seungjun Lee, Haeyun Lee, Namsun Chou, Hyogeun Shin

{"title":"Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes","authors":"Sehwan Park, Minseok Kim, Giheon Kim, Seungjun Lee, Haeyun Lee, Namsun Chou, Hyogeun Shin","doi":"10.1002/aelm.70569","DOIUrl":"https://doi.org/10.1002/aelm.70569","url":null,"abstract":"Neural probes are essential electrophysiological tools for investigating brain function. Gold (Au) has traditionally been used as the standard signal‐line material due to its high electrical conductivity and excellent biocompatibility. However, global factors, including the COVID‐19 pandemic and associated supply‐chain instabilities, have driven a sharp rise in Au prices over the past decade, substantially increasing the cost of neural probe fabrication. Here, we introduce a neural probe that replaces Au with aluminum (Al), a widely available, low‐cost metal with high electrical conductivity and extensive use in semiconductor manufacturing. To ensure stable electrical performance despite Al's intrinsic susceptibility to oxidation, we developed a Ti/Al/Ni multilayer metal stack engineered to enhance interfacial adhesion, suppress spontaneous oxide formation, and mitigate electrochemical reactivity in electrolyte environments. Using this optimized architecture, the total fabrication cost of a Ti/Al/Ni multilayer neural probe was approximately USD 217—roughly one‐quarter the cost of a probe fabricated with Au under identical process conditions. The resulting probes exhibited robust electrical and chemical stability across multiple evaluations, and in vivo recordings demonstrated neural signal quality comparable to that of conventional Ti/Au neural probes. This approach can expand accessibility to high‐quality neural recording technologies, particularly in resource‐limited research settings.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Amorphous, Highly Conductive Pr 0.7 Ca 0.3 MnO 3 for Area‐Dependent Resistive Switching AlO x Bilayer Devices 非晶，高导电性Pr 0.7 Ca 0.3 mno3，用于面积相关电阻开关双层器件

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.202500556

Max Buczek,Iliyas T. Dossayev,Clemens Wittberg,Yen‐Po Liu,Kalle Goß,David N. Mueller,Zoe Moos,Zhenhao Liu,Karsten Bittkau,Mohammad Hassan Sultani,Stephan Menzel,Susanne Hoffmann‐Eifert,Regina Dittmann

{"title":"Amorphous, Highly Conductive Pr\u0000 0.7\u0000 Ca\u0000 0.3\u0000 MnO\u0000 3\u0000 for Area‐Dependent Resistive Switching AlO\u0000 \u0000 x\u0000 \u0000 Bilayer Devices","authors":"Max Buczek,Iliyas T. Dossayev,Clemens Wittberg,Yen‐Po Liu,Kalle Goß,David N. Mueller,Zoe Moos,Zhenhao Liu,Karsten Bittkau,Mohammad Hassan Sultani,Stephan Menzel,Susanne Hoffmann‐Eifert,Regina Dittmann","doi":"10.1002/aelm.202500556","DOIUrl":"https://doi.org/10.1002/aelm.202500556","url":null,"abstract":"ABSTRACT Memristive Pr 0.7 Ca 0.3 MnO 3 (PCMO) heterostructures exhibit area‐dependent resistive switching via a valence change mechanism, making them promising for neuromorphic architectures. A major challenge in PCMO‐based memory is higher‐dimensional lattice defects that affect oxygen‐vacancy migration and concentration. This study mitigates these defects using highly conductive amorphous PCMO fabricated via a CMOS back‐end‐of‐line‐compatible process and compares it with low‐conductive amorphous and polycrystalline PCMO. The resistance differences are attributed to changes in electronic mobility, based on the analysis of short‐ and long‐range order, Mn–O hybridization, and Mn valence state. AlO x /qa‐PCMO devices showed the highest ON/OFF ratio compared to low‐conductive amorphous and polycrystalline PCMO, because the field‐accelerated oxygen vacancy movement switches the mechanism from Poole–Frenkel emission in the LRS to trap‐assisted tunneling in the HRS. The mechanism change was identified by systematically analyzing the I–V asymmetry, device band diagrams for different PCMO types, and shape changes in the I–V curve fits. The band diagrams were calculated from the measured bandgaps and work functions of the different PCMO types. Analysis of the electric field distribution in the devices showed a clear correlation between the pre‐switching field strength in AlO x and the resulting ON/OFF ratio.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces 可编程元表面中全波验证实时波束形成的物理信息生成代理学习

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70480

Wenqian Liu,Weidong Chen,Chang Chen,Xiang Zhang,Sensong An

引用次数: 0

Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents 喷墨印刷的h - BN记忆电阻器在低电流下具有创纪录的耐久性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-04 DOI: 10.1002/aelm.70557

Pere Aran Vilà,Giovanni Vescio,Juan Castillo,Francisco Palacio,Blas Garrido,Sergi Hernández,Albert Cirera

{"title":"Inkjet‐Printed h‐BN Memristors with a Record Endurance under Low‐Currents","authors":"Pere Aran Vilà,Giovanni Vescio,Juan Castillo,Francisco Palacio,Blas Garrido,Sergi Hernández,Albert Cirera","doi":"10.1002/aelm.70557","DOIUrl":"https://doi.org/10.1002/aelm.70557","url":null,"abstract":"ABSTRACT Memristors exhibiting both volatile and non‐volatile resistive switching (RS) behaviors hold significant potential for their utilization as artificial neurons and synapses in neuromorphic computing systems, respectively. Inkjet printing presents an economical, low‐material‐waste, and compatible process for the fabrication of solution‐based memristors, which are essential for flexible, wearable and biocompatible applications. However, inkjet‐printed memristors typically exhibit low endurance (below 10 4 cycles) and high switching currents (above 100 µA), both of which represent critical limitations for the practical implementation and low‐power operation of neuromorphic computing systems. In this work, a hexagonal boron nitride (h‐BN) based memristor formulated via liquid phase exfoliation (LPE) and fabricated with inkjet printing demonstrates exceptional electrical performance with a remarkable endurance of 2.2 million cycles at very low currents (below 1 µA) in a volatile regime under a current‐driven approach. This result surpasses the highest endurance reported to date on inkjet‐printed‐based memristors, surpassing the threshold of one million cycles. At higher currents (above 10 µA), the same devices exhibit stable non‐volatile RS with an endurance of 70 000 cycles. This study not only demonstrates the remarkable performance of the designed memristors, but also opens new avenues for current‐driven memristive electrical characterization and neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0