Advanced Electronic Materials最新文献_第9页

Investigation of Opto-magnetic Memory Effects in Antiferromagnetic CuMnAs Using Ultrafast Heat Dynamics and Quench Switching 利用超快热动力学和猝灭开关研究反铁磁cumna中的光磁记忆效应

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-22 DOI: 10.1002/aelm.202400835

Jan Zubáč, Miloslav Surýnek, Kamil Olejník, Andrej Farkaš, Filip Krizek, Lukáš Nádvorník, Peter Kubaščík, Zdeněk Kašpar, František Trojánek, Richard P. Campion, Vít Novák, Petr Němec, Tomáš Jungwirth

{"title":"Investigation of Opto-magnetic Memory Effects in Antiferromagnetic CuMnAs Using Ultrafast Heat Dynamics and Quench Switching","authors":"Jan Zubáč, Miloslav Surýnek, Kamil Olejník, Andrej Farkaš, Filip Krizek, Lukáš Nádvorník, Peter Kubaščík, Zdeněk Kašpar, František Trojánek, Richard P. Campion, Vít Novák, Petr Němec, Tomáš Jungwirth","doi":"10.1002/aelm.202400835","DOIUrl":"10.1002/aelm.202400835","url":null,"abstract":"Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for seeking such approaches due to their exceptional features: low-power consumption and possible high integration density are desirable for information storage and processing or applications in unconventional computing. Among antiferromagnets, CuMnAs stands out for atomic-level scalable magnetic textures, analogue multilevel storage capability, and the magnetic state's control by a single electrical or femtosecond laser pulse. Using a pair of excitation laser pulses, this work examines functionalities of CuMnAs favorable for information processing, readily incorporating two principles of distinct characteristic timescales. Laser-induced transient heat dynamics at sub-nanosecond times represents the short-term memory and causes resistance switching due to quenching into a magnetically fragmented state. This quench switching, detectable electrically from ultrashort times to hours after writing, reminisces the long-term memory. The versatility of the principles' combination is demonstrated by antiferromagnetic in-memory operations. Temporal latency coding is utilized to encode data from a grayscale image into sub-nanosecond pulse delays. Applying input laser pulses of distinct amplitudes then allows for determining their relative order at 100-ps timescales. The results open pathways for ultrafast information processing employing antiferromagnetic memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 9","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400835","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144114467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ULF Multi-Key Tunable Magnetoelectric Antenna Array with Enhanced Communication Data Rate 提高通信数据速率的ULF多键可调谐磁电天线阵列

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-19 DOI: 10.1002/aelm.202500016

Qianshi Zhang, Xiayu Zhang, Boyu Xin, Zishuo Fan, Jie Jiao, Yi Liu, Anran Gao, Chungang Duan

{"title":"ULF Multi-Key Tunable Magnetoelectric Antenna Array with Enhanced Communication Data Rate","authors":"Qianshi Zhang, Xiayu Zhang, Boyu Xin, Zishuo Fan, Jie Jiao, Yi Liu, Anran Gao, Chungang Duan","doi":"10.1002/aelm.202500016","DOIUrl":"https://doi.org/10.1002/aelm.202500016","url":null,"abstract":"Low-frequency electromagnetic (EM) waves are essential in underwater, deep-earth, and other communication environments due to their minimal attenuation. The magnetoelectric (ME) antenna, a novel mechanical antenna, provides a promising solution for low-frequency EM wave communication, overcoming the limitations of conventional designs in terms of size and efficiency. To address the low transmission rate in low-frequency EM wave communication, this paper proposes a multi-key tunable antenna array based on an ME cantilever beam design. Each antenna array element consists of Metglas/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) ME composite. Simulations identified a structure that significantly lowers the resonant frequency, allowing the ME antenna array to operate within the ultra-low frequency (ULF, 300 Hz-3000 Hz) band. Furthermore, the resonant frequency can be tuned over a range of 500 Hz, enabling multi-frequency-shift keying (MFSK) communication. Using quaternary FSK (4FSK) modulation, a 40 baud color image transmission is successfully demonstrated in a 5 S m−1 saline environment. Compared to binary FSK (2FSK) at the same baud rate, the transmission speed is increased by 100%. This approach achieves both low attenuation and high transmission rates, offering a promising new direction for ocean communications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"131 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144087936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Interlayer on Doped Organic p–n Heterojunction Charge Generation Layers Using Impedance Spectroscopy (Adv. Electron. Mater. 7/2025) 阻抗谱技术对掺杂有机p-n异质结电荷生成层的影响。板牙。7/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-19 DOI: 10.1002/aelm.202570022

Somi Park, Akeem Raji, So-Young Boo, Eun-Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae-Hyun Lee

引用次数: 0

Ohmic Response in BiFeO3 Domain Walls by Submicron-Scale Four-Point Probe Resistance Measurements (Adv. Electron. Mater. 7/2025) 用亚微米尺度四点探针电阻测量BiFeO3畴壁的欧姆响应。板牙。7/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-19 DOI: 10.1002/aelm.202570020

Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda

引用次数: 0

Controllable Laser-Induced Phase Transition in Multilayer 2H-MoTe2 and its Raman Spectroscopy Study 可控激光诱导多层2H-MoTe2相变及其拉曼光谱研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-19 DOI: 10.1002/aelm.202500064

Hao Chang, Yang Yang, Ruochen Zhang, Qinghu Bai, Xin Huang, Lingyu Wan, Junjie Li

{"title":"Controllable Laser-Induced Phase Transition in Multilayer 2H-MoTe2 and its Raman Spectroscopy Study","authors":"Hao Chang, Yang Yang, Ruochen Zhang, Qinghu Bai, Xin Huang, Lingyu Wan, Junjie Li","doi":"10.1002/aelm.202500064","DOIUrl":"https://doi.org/10.1002/aelm.202500064","url":null,"abstract":"Transition metal dichalcogenides (TMDCs) heterojunctions, with their atomically precise planar structures, enable the formation of smooth and well-matched interfaces between different TMDCs components, effectively mitigating performance losses caused by lattice mismatches and rendering them highly suitable for applications in advanced devices, including 2D photodetectors, flexible light-emitting diodes, high-mobility field-effect transistors, and solar cells. Lateral heterojunctions, owing to the covalent bonding between distinct phases, demonstrate high carrier mobility, significantly lowering the contact resistance at the interface. However, the fabrication of lateral TMDCs heterojunctions is limited by several factors, including randomness, interfacial quality, and process reproducibility. In this study, a straightforward laser irradiation method for inducing phase transitions in MoTe₂ is presented. By optimizing the laser power and exposure duration, multilayer 2H-MoTe₂ encapsulated with h-BN is successfully transformed into the 1T′ phase, as verified by Raman spectroscopy. Moreover, temperature-dependent Raman spectroscopy is performed on the laser-induced 1T′-MoTe₂, which demonstrated the transformation into the Td phase at ≈230K, suggesting the high structural quality of the laser-irradiated 1T′-MoTe₂. These results demonstrate a practical approach for phase engineering of MoTe₂, providing valuable insights into the fabrication of lateral heterojunctions and their future applications in high-performance photoelectric devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"42 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reversal of Spin-Torque Polarity with Inverting Current Vorticity in Composition-Graded Layer at the Ti/W Interface (Adv. Electron. Mater. 7/2025) Ti/W界面复合梯度层中电流涡度反转的自旋-转矩极性研究板牙。7/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-19 DOI: 10.1002/aelm.202570021

Hayato Nakayama, Taisuke Horaguchi, Jun Uzuhashi, Cong He, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuto Yamanoi, Yukio Nozaki

引用次数: 0

Tuning the Mutual Synchronization of Electrically Coupled Spin-Torque Oscillators by Selecting the Vortex Dynamic Regime 选择涡旋动力模式调谐电耦合自旋-转矩振荡器的相互同步

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-15 DOI: 10.1002/aelm.202400808

Miguel Romera, Philippe Talatchian, Steffen Wittrock, Romain Lebrun, Karla J. Merazzo, Paolo Bortolotti, Laurent Vila, Ricardo Ferreira, Marie Claire Cyrille, Ursula Ebels, Vincent Cros, Julie Grollier

{"title":"Tuning the Mutual Synchronization of Electrically Coupled Spin-Torque Oscillators by Selecting the Vortex Dynamic Regime","authors":"Miguel Romera, Philippe Talatchian, Steffen Wittrock, Romain Lebrun, Karla J. Merazzo, Paolo Bortolotti, Laurent Vila, Ricardo Ferreira, Marie Claire Cyrille, Ursula Ebels, Vincent Cros, Julie Grollier","doi":"10.1002/aelm.202400808","DOIUrl":"10.1002/aelm.202400808","url":null,"abstract":"In this study, the synchronization ability of vortex-based spin-torque nano-oscillators is investigated for three different dynamical regimes: the fundamental gyrotropic mode, the dynamic C-state, and the transition regime characterized by stochastic switching between the gyrotropic mode and the dynamic C-state. By combining injection locking at 2f and mutual synchronization experiments between two oscillators, it is shown that the ability to synchronize is larger in the transition regime than in the gyrotropic mode. By slightly tuning the injected dc current, this transition regime, which is highly efficient at synchronization, evolves into a dynamic state with no ability to synchronize. Thus, the synchronization range can be tuned, and the synchronized state can be easily switched on and off by selecting the dynamic regime. These results are promising for applications requiring large-scale networks of synchronized oscillators, where tuning the synchronization range and controlling the synchronized state are important features, such as neuromorphic computing and broadband microwave communication","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 9","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400808","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144000666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene/h-BN/ReS2 Heterostructure Operating in Fowler−Nordheim Tunneling Regime for Polarization-Sensitive Fast Photodetector 石墨烯/h-BN/ReS2异质结构在Fowler - Nordheim隧穿机制下用于偏振敏感快速光电探测器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-14 DOI: 10.1002/aelm.202500001

Tianyi Zhou, Ming Yang, Jingyao Wang, Xiang Chen, Qingyu Yan, Kenji Watanabe, Taniguchi Takashi, Xue Liu, Yuqing Huang, Weigao Xu, Xinran Wang, Li Gao, Zehua Hu

{"title":"Graphene/h-BN/ReS2 Heterostructure Operating in Fowler−Nordheim Tunneling Regime for Polarization-Sensitive Fast Photodetector","authors":"Tianyi Zhou, Ming Yang, Jingyao Wang, Xiang Chen, Qingyu Yan, Kenji Watanabe, Taniguchi Takashi, Xue Liu, Yuqing Huang, Weigao Xu, Xinran Wang, Li Gao, Zehua Hu","doi":"10.1002/aelm.202500001","DOIUrl":"https://doi.org/10.1002/aelm.202500001","url":null,"abstract":"On-chip polarization photodetectors are crucial for advancing optical communication, which is facing the challenges of limited polarization sensitivity and hard on-chip integration. 2D materials offer unique opportunities for creating high-performance polarization photodetectors thanks to their intrinsic anisotropy and extensive heterostructure design freedom. Herein, a graphene/h-BN/ReS2 tunneling heterostructure is designed to realize a high-performance polarization photodetector in the Fowler−Nordheim tunneling (FNT) regime. Specifically, the photodetector achieves a high photocurrent signal-to-noise ratio of ≈103 by suppressing the tunneling dark current with the hBN tunneling layer. The h-BN also creates a strong electric field, which accelerates the photogenerated carriers and achieves a response time of ≈70 µs. Such a high signal-to-noise ratio and short response time are over two orders of magnitude stronger and shorter than those of field-effect transistor-type ReS2 photodetectors. Moreover, in the FNT regime, the contribution of an anisotropic tunneling barrier and effective hole mass can effectively enhance the photocurrent dichroic ratio to exceed the intrinsic absorption dichroic ratio of 1.61, achieving the maximal value of 1.85. The enhancement mechanism is well understood by the consistent experimental and theoretical results. This study provides a viable approach to designing high-performance on-chip polarization photodetectors by utilizing the characteristics of the FNT regime.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"80 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144000660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Simple Manufactured Hardness Sensor Based on Multi-Layer Liquid Metal Sensing for Surgical Robotics 一种基于多层液态金属传感的外科机器人硬度传感器

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-14 DOI: 10.1002/aelm.202400982

Tao Yue, Yuyin Zhang, Yuanjie Gan, Chengzhi Hu, Yue Wang

{"title":"A Simple Manufactured Hardness Sensor Based on Multi-Layer Liquid Metal Sensing for Surgical Robotics","authors":"Tao Yue, Yuyin Zhang, Yuanjie Gan, Chengzhi Hu, Yue Wang","doi":"10.1002/aelm.202400982","DOIUrl":"10.1002/aelm.202400982","url":null,"abstract":"Tactile information, serving as the most intricate form of data humans gather from the external environment, has long been a significant area of focus for wearable flexible sensors. The advancement of wearable technology and robotics in healthcare has spurred research into integrating thin, compact flexible sensors into robotic systems for mimicking human tactile tissue manipulation during surgery and data collection. Here, a continuous injection method is used to fabricate a multi-layer liquid metal sensor. By laminating multiple PDMS microfluidic layers, the two parameters of pressure and deformation are simultaneously measured in a decoupled manner. The compact and thin design of the sensor facilitates its integration into fingers or robotic digits, enabling assistance by deforming upon contact with materials and identifying their hardness through applied pressure. Separate performance tests of the two sensors show that the strain and pressure functions are decoupled from each other, and their ratios can identify and classify the hardness of different contact materials (glass, PDMS, and silicone). The hardness sensor can assist robots in operating human tissues during medical surgeries. The demonstrated fabrication and integration approaches provide a path toward tactile sensor applications in medical treatment, rehabilitation, services, and other processes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400982","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144000658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rationally Design Thermoelectric Materials Based on Ingenious Machine Learning Methods 基于巧妙的机器学习方法合理设计热电材料

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-14 DOI: 10.1002/aelm.202500210

Yuqing Sun, Xiaorui Chen, Jianzhi Gao, Wenliang Zhu, Minghu Pan

{"title":"Rationally Design Thermoelectric Materials Based on Ingenious Machine Learning Methods","authors":"Yuqing Sun, Xiaorui Chen, Jianzhi Gao, Wenliang Zhu, Minghu Pan","doi":"10.1002/aelm.202500210","DOIUrl":"https://doi.org/10.1002/aelm.202500210","url":null,"abstract":"Data quality, feature interpretability, and model generalization are critical and challenging for applying machine learning (ML) in the design of high-efficiency materials. In this work, an ML framework with integrating multi-step feature engineering is constructed for predicting the figure of merit (ZT) values of thermoelectric materials. By incorporating thermoelectric material data from the Starrydata2 database and implementing rigorous data cleaning, a high-quality ZT prediction dataset is established. An integrated strategy of feature extraction with combining Magpie and CBFV methods is utilized, followed by feature selection via Pearson correlation analysis and LassoCV cross-validation. Finally, the deep neural network model (Model-I) demonstrates excellent predictive performance (R2 = 0.95 on the training set and R2 = 0.90 on the test set), as well as identified successfully promising candidates such as CsCdBr3 and TlBSe3 in screening chalcogenide and halide perovskites. Combined with Density Functional Theory (DFT) calculation, the outstanding thermoelectric performance of CsCdBr3 under p-type doping (ZTmax = 1.64) and the bipolar thermoelectric characteristics of TlBSe3 (ZTmax = 1.04 for n-type and ZTmax = 0.99 for p-type) at 800K are successfully demonstrated, further confirming the reliability of our method. This study provides an applicative data-driven approach for functional material design, balancing predictive accuracy and physical interpretability.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144000659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0