Advanced Electronic Materials最新文献_第9页

Low Band Gap Furan-Flanked Diketopyrrolopyrrole-Naphthobisthiadiazole Based Conjugated Polymer/Stretchable Blend for Organic Field Effect Transistors 用于有机场效应晶体管的低带隙呋喃侧翼二酮吡咯并萘二噻二唑共轭聚合物/可拉伸混合物

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-07 DOI: 10.1002/aelm.202400614

Kakaraparthi Kranthiraja, Vithyasaahar Sethumadhavan, Shohei Kumagai, Yanan Xu, Andreas Erhardt, Christopher R. McNeill, Sergei Manzhos, Jun Takeya, Prashant Sonar

{"title":"Low Band Gap Furan-Flanked Diketopyrrolopyrrole-Naphthobisthiadiazole Based Conjugated Polymer/Stretchable Blend for Organic Field Effect Transistors","authors":"Kakaraparthi Kranthiraja, Vithyasaahar Sethumadhavan, Shohei Kumagai, Yanan Xu, Andreas Erhardt, Christopher R. McNeill, Sergei Manzhos, Jun Takeya, Prashant Sonar","doi":"10.1002/aelm.202400614","DOIUrl":"https://doi.org/10.1002/aelm.202400614","url":null,"abstract":"N-type organic semiconducting materials that are compatible in stretchable organic field effect transistors (OFETs) still lag in performance behind that of p-type materials. Herein, a n-type conjugated polymer (DPPF-NTz) is reported that comprises a furan flanked diketopyrrolopyrrole (DPPF) as a monomer and napthobisthiadiazole (NTz) as a comonomer units, respectively, in a conjugated polymer backbone. The low band gap of 1.34 eV and suitable frontier energy levels allow its utilization in OFETs as an n-type semiconducting material. Optimized bottom-gate top contact OFETs based on chloroform and chloroform: o-dichlorobenzene processed DPPF-NTz showed a maximum electron mobility (µe) of 0.00042 cm2 V⁻¹ s⁻¹ and 0.00078 cm2 V⁻¹ s⁻¹, respectively, in devices annealed at 150 °C. Interestingly, upon mixing the DPPF-NTz with a stretchable polymer, polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS), yielded a stretchable semiconducting polymer composite, which displayed an enhanced µe of 0.0024 cm2 V⁻¹ s⁻¹ in devices annealed at 250 °C over pristine DPPF-NTz. The improved µe and mechanical stretchability of the DPPF-NTz: SEBS polymer blend over pristine DPPF-NTz polymer is examined by nano-mechanical atomic force microscopy. The research investigation finding provides a critical insight into the structural and nano-mechanical properties of n-type stretchable polymer semiconductors, which are essential for the development of next-generation wearable OFETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142384824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Robust Light Detection from Ultraviolet to Near-Infrared with ZnGa2O4/p-Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions 利用 ZnGa2O4/p-Si 异质结光电二极管进行紫外线到近红外的强光检测及其在光电物理不可克隆功能中的应用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-06 DOI: 10.1002/aelm.202400649

Wangmyung Choi, Seungme Kang, Yeong Jae Kim, Youngwoo Yoo, Wonjun Shin, Yeongkwon Kim, Young-Joon Kim, Byung Chul Jang, Jaehyun Hur, Hocheon Yoo

{"title":"Robust Light Detection from Ultraviolet to Near-Infrared with ZnGa2O4/p-Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions","authors":"Wangmyung Choi, Seungme Kang, Yeong Jae Kim, Youngwoo Yoo, Wonjun Shin, Yeongkwon Kim, Young-Joon Kim, Byung Chul Jang, Jaehyun Hur, Hocheon Yoo","doi":"10.1002/aelm.202400649","DOIUrl":"https://doi.org/10.1002/aelm.202400649","url":null,"abstract":"The Si-based self-powered broadband photodiode (SSBP) is prized for its ability to swiftly detect light across a wide spectrum without requiring an external voltage. However, boosting its efficiency remains challenging due to its high refractive index and limited UV light penetration. A combination of Si with ZnGa2O4, an ultra-wide-bandgap spinel material, can bring new opportunities to address these shortcomings of SSBP. In this study, a ZnGa2O4/p-Si heterojunction photodiode is presented, which is capable of detecting UV to near-infrared light autonomously. Operating without bias, this device exhibits excellent rectification and detects wavelengths from 265 to 1000 nm, achieving impressive performance metrics such as a photo-to-dark current ratio of 5.8 × 104, response speed of less than 3 ms, responsivity of 117 mA W−1, and specific detectivity of 5.5 × 1012 Jones while the photodiode demonstrates exceptional stability and durability under harsh conditions. The versatility of this device is demonstrated by applying it to the optical imaging sensors and physically unclonable security devices. This study provides new inspirations for the development of the energy-efficient and emerging optical sensing technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reducing the Barrier Height in Organic Transistors 降低有机晶体管的势垒高度

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400503

Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al-Hashimi, Shubhra Gangopadhyay, Suchismita Guha

{"title":"Reducing the Barrier Height in Organic Transistors","authors":"Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al-Hashimi, Shubhra Gangopadhyay, Suchismita Guha","doi":"10.1002/aelm.202400503","DOIUrl":"https://doi.org/10.1002/aelm.202400503","url":null,"abstract":"Reducing the Schottky barrier height and Fermi level de-pinning in metal-organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom-contact top-gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al2O3 on the source and drain contacts. By using two different donor-acceptor copolymers, both p- and n-type transistors are investigated. Temperature-dependent current–voltage measurements from non-treated, self-assembled monolayer treated, and Al2O3 treated Au source-drain contact field-effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height (φB). The Al2O3 contact-treated transistors show more than 40% lower φB compared with the non-treated contacts in the p-type transistor. Similarly, an isoindigo-based transistor, with n-type transport, shows a reduction in φB with Al2O3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Ferroelectricity of Hf-Based Memcapacitors by Adopting Ti Insert-Layer and C–V Measurement for Constructing Energy-Efficient Reservoir Computing Network 通过采用 Ti 插入层和 C-V 测量增强 Hf 基薄膜电容器的铁电性，构建高能效储能计算网络

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400395

Bo Chen, Yifang Wu, Yizhi Liu, Xiaopeng Li, Lu Tai, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen

{"title":"Enhanced Ferroelectricity of Hf-Based Memcapacitors by Adopting Ti Insert-Layer and C–V Measurement for Constructing Energy-Efficient Reservoir Computing Network","authors":"Bo Chen, Yifang Wu, Yizhi Liu, Xiaopeng Li, Lu Tai, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen","doi":"10.1002/aelm.202400395","DOIUrl":"https://doi.org/10.1002/aelm.202400395","url":null,"abstract":"Hf-based ferroelectric memcapacitors only consume dynamic power with the merits of reliable nonvolatile storage and Si-process compatibility, which is an outstanding artificial synapse for constructing energy-efficient neuromorphic computing networks. In this paper, the ferroelectricity of Hf0.5Zr0.5O2 (HZO) memcapacitor is improved by the co-optimization of process design and electrical measurement with various thicknesses of the Ti insertion layer and conditions of Capacitor–Voltage (C–V) tests. Material characterization indicates the Ti insertion layer reduces the m-phase and increases the ratio of the o-phase in HZO film. The wake-up-free behaviors are achieved in the Ti insertion layer memcapacitors with an endurance of ≈109 cycles. Furthermore, ferroelectric properties are further enhanced after C–V measurement with the 1nm-thick Ti insertion layer showing the largest remanent polarization (2Pr≈41.02 µC cm−2). Subsequently, a full hardware-implemented hierarchical parallel reservoir computing (RC) network is constructed using 34 HZO memcapacitive synapses. The proposed network achieves high recognition accuracy (≈96.10%) and low dynamic power consumption (≈0.15 fJ per input) with the MNIST dataset. These findings indicate the feasibility of developing a highly energy-efficient, fully hardware-implemented, hierarchical parallel RC neural network.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors 碳纳米管晶体管偏置温度不稳定性的研究与改进

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400464

Yifu Sun, Peng Lu, Lingyu Zhang, Yu Cao, Lan Bai, Li Ding, Jie Han, Chiyu Zhang, Maguang Zhu, Zhiyong Zhang

引用次数: 0

Electronic Properties of Ultra-Wide Bandgap BxAl1−xN Computed from First-Principles Simulations 通过第一原理模拟计算出的超宽带隙 BxAl1-xN 电子特性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400549

Cody L. Milne, Tathagata Biswas, Arunima K. Singh

{"title":"Electronic Properties of Ultra-Wide Bandgap BxAl1−xN Computed from First-Principles Simulations","authors":"Cody L. Milne, Tathagata Biswas, Arunima K. Singh","doi":"10.1002/aelm.202400549","DOIUrl":"https://doi.org/10.1002/aelm.202400549","url":null,"abstract":"Ultra-wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, BxAl1−xN, are much less studied despite their ability to offer tunable properties by adjusting x. In this article, the electronic properties of 17 recently predicted ground states of BxAl1−xN in the x = 0 − 1 range are predicted using first-principles density functional theory and many-body perturbation theory within GW approximation. All the BxAl1−xN structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite-phase (w) AlN (6.19 eV) to that of w-BN (7.47 eV). The bandstructures of BxAl1−xN show that a direct-to-indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that BxAl1−xN alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ0 or BN = 7.3 ɛ0), with values reaching as high as 12.1 ɛ0. These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm−1 with a linear dependence on x. This work provides the much needed advancement in the understanding of the properties of BxAl1−xN to aid their application in next-generation devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors 改善有机场效应晶体管中碳水化合物半导体聚合物的电荷传输和环境稳定性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400537

Madison Mooney, Lauren Pandolfi, Yunfei Wang, Chenhui Zhu, Garima Garg, Ulrike Kraft, Xiaodan Gu, Simon Rondeau-Gagné

{"title":"Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors","authors":"Madison Mooney, Lauren Pandolfi, Yunfei Wang, Chenhui Zhu, Garima Garg, Ulrike Kraft, Xiaodan Gu, Simon Rondeau-Gagné","doi":"10.1002/aelm.202400537","DOIUrl":"https://doi.org/10.1002/aelm.202400537","url":null,"abstract":"Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side-chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field-effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate-bearing semiconducting polymers. Toward this objective, a series of isoindigo-based polymers with carbohydrate side chains of varied carbon-spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid-state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen-doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon 超掺碲硅中电荷载流子的温度相关动力学

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400417

KM Ashikur Rahman, Mohd Saif Shaikh, Qianao Yue, S. Senali Dissanayake, Mao Wang, Shengqiang Zhou, Meng-Ju Sher

{"title":"Temperature-Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon","authors":"KM Ashikur Rahman, Mohd Saif Shaikh, Qianao Yue, S. Senali Dissanayake, Mao Wang, Shengqiang Zhou, Meng-Ju Sher","doi":"10.1002/aelm.202400417","DOIUrl":"https://doi.org/10.1002/aelm.202400417","url":null,"abstract":"Tellurium-hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time-resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two photoexcitation wavelengths enable us to understand the temperature-dependent carrier transport in the hyperdoped region in comparison with the Si region. Temperature significantly influences the magnitude of transient conductivity and decay time when photoexcited by light with a wavelength of 400 nm. Due to the differential mobilities in the Si and hyperdoped regions, such dependence is absent under 266-nm excitation. Consistent with the literature, the charge-carrier lifetime decreases with increasing dopant concentration. It is found that the photoconductivity becomes less temperature-dependent as the dopant concentration increases. In the literature, the photodetection range of Si:Te extends to a wavelength of 5.0 µm at a temperature of 20 K. The simulation shows that carrier diffusion, driven by concentration gradients, is strongly temperature dependent and impacts transient photoconductivity decay curves. The simulation also revealed that, in the hyperdoped regions, the carrier recombination rate remains independent of temperature.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"223 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-Controlled Photoresponse in an Individual Single-Walled Carbon Nanotube Modified with a Fluorescent Protein 用荧光蛋白修饰的单根单壁碳纳米管中的门控光响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400329

Anastasiia S. Kudriavtseva, Nikita P. Nekrasov, Dmitry V. Krasnikov, Albert G. Nasibulin, Alexey M. Bogdanov, Ivan Bobrinetskiy

{"title":"Gate-Controlled Photoresponse in an Individual Single-Walled Carbon Nanotube Modified with a Fluorescent Protein","authors":"Anastasiia S. Kudriavtseva, Nikita P. Nekrasov, Dmitry V. Krasnikov, Albert G. Nasibulin, Alexey M. Bogdanov, Ivan Bobrinetskiy","doi":"10.1002/aelm.202400329","DOIUrl":"https://doi.org/10.1002/aelm.202400329","url":null,"abstract":"Bionanohybrids of carbon nanotubes and fluorescent proteins (FPs) are a promising class of materials for optoelectronic applications. Understanding and controlling the charge transport mechanism between FPs and carbon nanotubes are critical to achieving functional reproducibility and exploring novel synergetic effects. This work demonstrates a novel phenomenon of photocurrent generation in field-effect transistors based on the conjugation of an individual single-walled carbon nanotube (SWCNT) and FPs. When studying the effect of gate voltage on the photoresponse, reversible switching from fast positive to a slow negative photoresponse in bionanohybrids associated with depletion and accumulation modes, respectively is observed. The latter demonstrates a stable memory effect after the light is turned off. It is revealed that in depletion mode, the charge carriers from the protein are not trapped at the interface due to effective screening by the gate potential. It is suggested that the main mechanism in photoresponse switching is a competitive effect between photogating and effective photodoping of the SWCNT by charges trapped at the nanotube interface. The noticeable effect of water molecules can support proton transfer as the main mechanism of charge transfer. This result illustrates that SWCNT/FP bionanohybrids bear great potential for the realization of novel optoelectronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices 轨道电流提高金属超晶格的磁化切换效率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-04 DOI: 10.1002/aelm.202400314

Junwen Wei, Xinkai Xu, Zijin Lin, Yuanjing Qu, Xiaoli Tang, Zhiyong Zhong, Huaiwu Zhang, Lichuan Jin

{"title":"Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices","authors":"Junwen Wei, Xinkai Xu, Zijin Lin, Yuanjing Qu, Xiaoli Tang, Zhiyong Zhong, Huaiwu Zhang, Lichuan Jin","doi":"10.1002/aelm.202400314","DOIUrl":"https://doi.org/10.1002/aelm.202400314","url":null,"abstract":"Orbitronics is an emerging domain within spintronics, and it is characterized by a rapid development of methods for utilizing orbital current. Metals with strong spin-orbit coupling have been effectively used to convert orbital current into orbital torque. This study introduces a metallic [W/Ti]3 superlattice that uses orbital current to significantly enhance the magnetization switching efficiency. The enhancement in torque efficiency is demonstrated via spin-torque ferromagnetic resonance along with the extraction of damping-like (ξDL) and field-like spin-orbit torque (SOT) efficiencies. ξDL for superlattices is more than 100 times higher than that for Pt. As a result, the critical switching current density of the superlattice becomes two orders of magnitude lower than that of Pt. This is primarily attributed to the orbital current generated by the orbital Rashba–Edelstein effect at the W/Ti interface. The thickness of Ti and W layers is modulated to develop a novel approach to utilize orbital current for augmenting SOT efficiency and magnetization switching efficiency in superlattices. The findings of this study provide a basis for developing low-power-consumption memory devices and memory with controllable critical current density in SOT-magnetic random-access memory applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142374609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0