Advanced Electronic Materials最新文献

{"title":"Nonlinear Optical Imaging of Entangled Heterophase Polydomains in Ferroelectric BZT Films","authors":"Piyali Maity,&nbsp;Hongbo Chen,&nbsp;Jun Ouyang,&nbsp;Yuhang Ren","doi":"10.1002/aelm.202500278","DOIUrl":"10.1002/aelm.202500278","url":null,"abstract":"<p>Quantitative evaluation of multi-phase evolution and domain characteristics in ferroelectric thin films is essential for understanding device engineering and underlying physical mechanisms. However, extracting local strain distribution and defects remains challenging with conventional techniques. Here, the azimuth- and polarization-dependent second harmonic generation (SHG) approach for distinguishing the tetragonal and rhombohedral domain variants in ferroelectric <i>BaZr_0.2Ti_0.8O₃</i> (BZT) films is presented. It is demonstrated that strain from the <i>LaAlO₃</i> (<i>LAO</i>) substrates breaks the in-plane symmetry of BZT thin films, significantly altering their second-order nonlinear susceptibility. Variations in SHG intensity and susceptibility characterize and spatially map polymorphic nanodomains and internal elastic strain fields within the BZT/LAO heterostructure. It is shown that the competition between tetragonal and rhombohedral phases gives rise to anisotropic nanodomains with complex elastic and electric fields. The SHG imaging spectroscopy is well-suited for understanding microstructural variations in ferroelectrics, which are directly relevant to device performance in memory and energy storage applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 13","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500278","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144603682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing","authors":"Luis Arturo Ruiz‐Preciado, Peter Krebsbach, Mervin Seiberlich, Gerardo Hernandez‐Sosa","doi":"10.1002/aelm.202500274","DOIUrl":"https://doi.org/10.1002/aelm.202500274","url":null,"abstract":"Transparent organic photodetectors are promising for applications in wearable and communication electronics, where they can serve as imperceptible sensors. Yet, common fabrication techniques such as spin coating and evaporation have limited compatibility with high‐throughput production and scalability. In this work, semi‐transparent and opaque organic photodiodes, inkjet‐printed on indium tin oxide electrodes, reaching a transmittance of up to 70.6% in the visible range are demonstrated. The diode's active layer comprises a transparent donor polymer and Y7 as a non‐fullerene acceptor. This bulk heterojunction results in near‐infrared responsivity with maximum values of 12 ± 2 mA W<jats:sup>−1</jats:sup> at −2 V and 840 nm for semi‐transparent diodes with Poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate electrodes and 60 ± 7 mA W<jats:sup>−1</jats:sup> for opaque devices with Ag electrodes. The diodes exhibit high detection speeds of up to 3 MHz, making them suitable for near‐infrared communication systems for soft robotics as well as wearable health monitoring, as demonstrated by pulse plethysmography.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144594003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen Defects and Instability in Very Thin a-IGZO TFTs","authors":"Hanjun Cho,&nbsp;Masatake Tsuji,&nbsp;Shigenori Ueda,&nbsp;Junghwan Kim,&nbsp;Hideo Hosono","doi":"10.1002/aelm.202500349","DOIUrl":"10.1002/aelm.202500349","url":null,"abstract":"<p>Amorphous oxide semiconductor (AOS) thin-film transistors (TFT) have gained significant attention for their potential in capacitor-free next-generation memory applications. However, improving threshold voltage (V_TH) stability and precisely controlling carrier concentration in ultra-thin channels remain critical challenges. In this study, an extraordinarily large positive-bias-stress (PBS) instability in hydrogen-free amorphous IGZO (a-IGZO)-TFTs that emerges as the channel thickness decreases is reported. This instability can be attributed to acceptors interacting with donors at shallow levels below the conduction band minimum (CBM). This model, based on temperature-dependent Hall effect measurements, reveals an unusual correlation between donor concentration and donor energy levels. Unlike in previously reported semiconductors, the energy difference between the CBM and donor energy level increases linearly in proportion to (donor concentration)^1/3. The O 1s core-level hard X-ray photoemission measurements suggest that the entity of the acceptors is oxygen vacancies without two electrons (V_O²⁺) formed during deposition. These vacancies result from strong donor−acceptor interactions arising from the formation of oxygen Frenkel defects in the thinner films. It is demonstrated that low-temperature extra-annealing effectively suppresses PBS instability by inducing structural relaxation of the Frenkel defects, thereby stabilizing the TFTs.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500349","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144678309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Copper Tin Halide p-Type TFT Enabled Solution Processed Monolithic 3D CMOS Circuits","authors":"Yutong Liu,&nbsp;Yang Yu,&nbsp;Tianzhi Li,&nbsp;Jiaru Zhang,&nbsp;Yihong Hu,&nbsp;Baoyue Zhang,&nbsp;Ranjith R. Unnithan,&nbsp;Efstratios Skafidas","doi":"10.1002/aelm.202500246","DOIUrl":"10.1002/aelm.202500246","url":null,"abstract":"<p>A critical requirement for low-power microelectronics is the construction of logic circuits using complementary devices. In pursuit of low-power solution-processed thin film Complementary Metal Oxide Semiconductor (CMOS) circuits, significant research is expended toward producing the elusive <i>p</i>-type transistors. Beyond the challenges associated with processability and formulation complexity of existing metal halide solutions, they critically do not attain the electrical properties required to build productive devices. For the first time, this work describes high-performance solution-processed <i>p</i>-type thin film transistors developed using copper tin halide. Incorporating tin and high electronegativity halide species (Cl-/F-) improves CuI film morphology, stability, and electrical properties through copper/tin vacancy suppression, which results in high mobility, over 20 cm² Vs⁻¹, and low operating voltage Thin Film Transistors (TFTs). Furthermore, the <i>p</i>-type TFTs are able to be integrated with fully solution-processed n-type Indium Gallium Zinc Oxide (IGZO) TFTs in a highly transparent multilayer stack architecture. The monolithic 3D (M3D) CMOS design records inverter gains of 20 at V_DD = 3V, demonstrating <i>p</i>-type devices fabricated using solution processing have the requisite high performance required for productive solution-processed multilayer microelectronics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144678300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Accessibility of Higher‐n Phases in Formamidinium‐Based Ruddlesden‐Popper and Dion–Jacobson Layered Hybrid Perovskites","authors":"Ghewa AlSabeh, Vladislav Slama, Masaud Almalki, Lena Merten, Paul Zimmermann, Alexander Hinderhofer, Pascal Alexander Schouwink, Virginia Carnevali, Nikolaos Lempesis, Lorenzo Agosta, Frank Schreiber, Ursula Rothlisberger, Michael Grätzel, Jovana V. Milić","doi":"10.1002/aelm.202500164","DOIUrl":"https://doi.org/10.1002/aelm.202500164","url":null,"abstract":"Layered (2D) hybrid perovskites offer a promising alternative for stabilizing halide perovskite materials, with a growing interest in formamidinium (FA<jats:sup>+</jats:sup>) lead iodide derivatives for photovoltaics due to their exceptional optoelectronic properties. While their potential increases with the number of inorganic layers (<jats:italic>n</jats:italic>), the experimental evidence suggests that obtaining <jats:italic>n &gt;</jats:italic> 2 phases is challenging for FA‐based layered perovskites. To address this challenge and identify the conditions governing the formation of higher‐<jats:italic>n</jats:italic> phases, representative FA‐based layered hybrid perovskite materials containing aromatic spacer cations, namely benzylammonium (BNA) and 1,4‐phenylenedimethanammonium (PDMA)—are investigated as model systems for the corresponding Ruddlesden‐Popper and Dion‐Jacobson phases based on (BNA)<jats:sub>2</jats:sub>FA<jats:sub>n–1</jats:sub>Pb<jats:sub>n</jats:sub>I<jats:sub>3n+1</jats:sub> and (PDMA)FA<jats:sub>n–1</jats:sub>Pb<jats:sub>n</jats:sub>I<jats:sub>3n+1</jats:sub> formulations (<jats:italic>n =</jats:italic> 1–3), respectively. Moreover, the effect of Cs<jats:sup>+</jats:sup> cations on the formation of <jats:italic>n &gt;</jats:italic> 1 phases is explored through a combination of X‐ray scattering measurements, solid‐state NMR spectroscopy, optoelectronic characterization, and density functional theory calculations. Despite improved photovoltaic performances, the formation of higher (<jats:italic>n &gt;</jats:italic> 2) phases is excluded, even in the presence of Cs<jats:sup>+</jats:sup>, due to the favorable formation of other low‐dimensional phases revealed by the theoretical investigation. The results contribute to a comprehensive understanding of these materials of broad interest to their application in optoelectronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144566437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless Technologies for Wearable Electronics: A Review (Adv. Electron. Mater. 10/2025)","authors":"Choong Yeon Kim,&nbsp;Juhyun Lee,&nbsp;Eun Young Jeong,&nbsp;Yeji Jang,&nbsp;Heesoo Kim,&nbsp;Bohyung Choi,&nbsp;Donggi Han,&nbsp;Youngjun Oh,&nbsp;Jae-Woong Jeong","doi":"10.1002/aelm.70022","DOIUrl":"10.1002/aelm.70022","url":null,"abstract":"<p><b>Advancing Toward Wireless Wearable Electronics</b></p><p>The image illustrates the evolution of wearable electronics from tethered systems to wireless technologies. In article number 2400884, Jae-Woong Jeong and co-workers show that, while once confined to lab equipment, these devices now utilize wireless communication and power solutions for health monitoring and treatment, providing greater mobility and flexibility.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless, Battery-free, Implantable Inductor-Capacitor Based Sensors (Adv. Electron. Mater. 10/2025)","authors":"Baochun Xu,&nbsp;Cunjiang Yu","doi":"10.1002/aelm.70029","DOIUrl":"10.1002/aelm.70029","url":null,"abstract":"<p><b>Inductor–Capacitor Sensors</b></p><p>Implantable wireless LC sensors enable real-time battery-free monitoring of physiological parameters through resonant frequency shifts detected via magnetic coupling. In article number 2500184, Cunjiang Yu and Baochun Xu present representative applications, such as intracranial pressure, cardiac activity, and gastrointestinal sensing, demonstrating the adaptability of the technology to a broad range of physiological parameters. Compact and biocompatible LC sensors support scalable, minimally invasive systems for next-generation bioelectronic healthcare.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Percolation Effect in Sub-100 Nm Nanograting Structure for High-Performance Bending Insensitive Flexible Pressure Sensor (Adv. Electron. Mater. 10/2025)","authors":"Jae-Soon Yang,&nbsp;Min-Ho Seo,&nbsp;Min-Seung Jo,&nbsp;Kwang-Wook Choi,&nbsp;Jae-Shin Lee,&nbsp;Myung-Kun Chung,&nbsp;Bon-Jae Koo,&nbsp;Jae-Young Yoo,&nbsp;Jun-Bo Yoon","doi":"10.1002/aelm.70023","DOIUrl":"10.1002/aelm.70023","url":null,"abstract":"<p><b>Flexible Pressure Sensors</b></p><p>In article number 2400980, Jae-Young Yoo, Jun-Bo Yoon, and co-workers develop a high-performance flexible pressure sensor using a sub-100 nm valley nanograting structure to enhance the percolation effect while maintaining bending insensitivity. This sensor reliably detects subtle pressures, such as arterial pulses, even on curved surfaces, making it ideal for wearable healthcare and tactile sensing applications. This cover illustrates the sensor's ability to maintain bending insensitivity while sensitively detecting arterial pulses, suggesting its potential for future applications in plantar pressure mapping.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70023","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Encapsulated Organohydrogel Couplants for Wearable Ultrasounds (Adv. Electron. Mater. 10/2025)","authors":"Xiaoru Dong,&nbsp;Zhi Yang,&nbsp;Chaoran Xu,&nbsp;Jun Zhao,&nbsp;Juntong Zhu,&nbsp;Haokun Yi,&nbsp;Hui Xu,&nbsp;Zhuo Li","doi":"10.1002/aelm.70030","DOIUrl":"10.1002/aelm.70030","url":null,"abstract":"<p><b>Wearable Ultrasounds</b></p><p>In article number 2400961, Zhuo Li and co-workers present an elastomer-encapsulated organohydrogel couplant designed for long-term wearable ultrasound imaging. By adding an appropriate amount of glycerol and employing elastomer encapsulation, the couplant effectively maintains long-term water retention. Meanwhile, the synergistic combination of glycerol and prefabricated hydrogel templates produces a smooth elastomer–organohydrogel interface, ensuring highly effective long-term ultrasound monitoring.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70030","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga2O3 Layers via Optical Admittance Spectroscopy","authors":"Payam Rajabi Kalvani,&nbsp;Antonella Parisini,&nbsp;Maura Pavesi,&nbsp;Francesco Mattei,&nbsp;Piero Mazzolini,&nbsp;Kingsley Egbo,&nbsp;Oliver Bierwagen,&nbsp;Abderrahim Moumen,&nbsp;Salvatore Vantaggio,&nbsp;Samaneh Shapouri,&nbsp;Matteo Bosi,&nbsp;Luca Seravalli,&nbsp;Roberto Fornari","doi":"10.1002/aelm.202500072","DOIUrl":"10.1002/aelm.202500072","url":null,"abstract":"<p>The impact of thermal treatments on the trapping phenomena in (001) Si-doped κ-Ga₂O₃ epi-layers, via optical admittance spectroscopy technique, is reported. Two Pt/κ-Ga₂O₃ Schottky contacts are investigated: one made on top of an as-grown Si-doped κ-Ga₂O₃ layer and the other on a thermally treated one. Three different illumination conditions, including monochromatic UV-C (<i>λ</i> = 254 nm), UV-B (<i>λ</i> = 312 nm), and UV-A (<i>λ</i> = 365 nm), are employed for the capacitance–voltage (<i>C–V</i>) measurements at different bias and AC frequencies to investigate traps and deep levels in κ-Ga₂O₃:Si. The net donor density profiles in dark and approximate density of photoionized traps of the as-grown and thermally treated samples are extracted from the <i>C–V</i> curves in the dual-frequency mode under different illumination conditions. A SnO/κ-Ga₂O₃ p-n heterojunction, where the κ-Ga₂O₃:Si layer underwent a double thermal treatment, is also investigated to better understand the relation between thermal treatment and distribution of trap density. The transient photocapacitance and photocurrent measurements are performed under the same illumination conditions to evaluate the response times of traps. This study provides a better understanding of the trapping phenomena in the as-grown and thermally treated κ-Ga₂O₃:Si epi-layers, which are important for UV-C detection applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144566436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}