Advanced Electronic Materials最新文献_第9页

Improving the Thermoelectric Properties of Conjugated Polymer Thin Films by Dip Coating – but not through Alignment 浸涂法改善共轭聚合物薄膜的热电性能-而非定向

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 Epub Date: 2024-12-05 DOI: 10.1002/aelm.202400695

Morteza Shokrani, Andrey Alekseevich Butkevich, Martijn Kemerink

{"title":"Improving the Thermoelectric Properties of Conjugated Polymer Thin Films by Dip Coating – but not through Alignment","authors":"Morteza Shokrani, Andrey Alekseevich Butkevich, Martijn Kemerink","doi":"10.1002/aelm.202400695","DOIUrl":"10.1002/aelm.202400695","url":null,"abstract":"Organic semiconductors (OSC) are of great current interest for thermoelectric (TE) applications due to their inherently low thermal conductivity and good Seebeck coefficient. However, reaching competitive figures of merit has proven difficult due to the common trade-off between conductivity and Seebeck coefficient. Previously, dip coating has been proposed to enhance the TE performance by aligning the molecules during the deposition from solution. The effect of the Landau–Levich and evaporation regimes on the TE properties of a prototypical polymer/dopant material system is analyzed. Dip coated films are characterized for different doping concentrations and dip coating velocities. Clearly separated evaporation and Landau–Levich regimes are established via film thickness measurements. A strong beneficial effect of dip coating is measured both in conductivity and Seebeck coefficient for lower dip coating speeds, leading to a clear increase in the power factor (PF) compared to both spin coated films and higher dip coating speeds. Intriguingly, no morphologies with aligned polymers are observed via polarization microscopy, X-ray diffraction, atomic force microscopy and optical spectroscopy, which is taken to imply that the observed TE performance is not due to uniaxial alignment but predominantly to an overall better, but still isotropic packing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400695","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics 使用生物电子学先进兼容材料的慢性疾病监测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 DOI: 10.1002/aelm.202500885

Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen-Karni

{"title":"Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics","authors":"Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen-Karni","doi":"10.1002/aelm.202500885","DOIUrl":"https://doi.org/10.1002/aelm.202500885","url":null,"abstract":"Chronic disease arises slowly through complex physiological factors that require continuous monitoring and treatment. Compliant bioelectronics with soft, stretchable, and tissue-conformal designs allow for in vivo continuous monitoring through electrophysiological, mechanical, and biochemical modalities, while minimizing tissue irritation and immune system response. In this review, we discuss recent progress in material development, device design, and versatile sensing modalities that allow stable long-term operation in dynamic biological environments. We focus on chronic electrophysiological systems for neural and cardiac recording, mechanical sensing systems for strain and pressure, and electrochemical sensors for molecular biomarkers. In addition, we examine self-powered bioelectronics based on piezoelectric and triboelectric energy conversion mechanisms that eliminate the requirement for external batteries, whereas multimodal and closed-loop systems combine sensing with therapeutic feedback. We consider key parameters like material biocompatibility, device flexibility, and long-term stability that are required for chronic monitoring to maintain stable signal quality over long time periods relevant for clinical recordings. These technologies for compliant bioelectronics enable early disease diagnosis, personalized treatment and continuous intervention for patients, narrowing the gap between laboratory study and routine clinical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Regiochemistry on Doping and Thermoelectric Properties of n-Doped Fullerene Derivatives 区域化学对n掺杂富勒烯衍生物掺杂和热电性能的影响

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 Epub Date: 2025-08-18 DOI: 10.1002/aelm.202500287

Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster

引用次数: 0

Organic Electrochemical Transistors and Foreign Body Reaction: First Steps Toward Long-Term Implantable Biosensing 有机电化学晶体管和异物反应：迈向长期植入式生物传感的第一步

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 DOI: 10.1002/aelm.202500737

Henrique Frulani de Paula Barbosa, Titinun Nuntapramote, Ankush Kumar, Sander van den Driesche, Michael J. Vellekoop, Dorothea Brüggemann, Björn Lüssem

{"title":"Organic Electrochemical Transistors and Foreign Body Reaction: First Steps Toward Long-Term Implantable Biosensing","authors":"Henrique Frulani de Paula Barbosa, Titinun Nuntapramote, Ankush Kumar, Sander van den Driesche, Michael J. Vellekoop, Dorothea Brüggemann, Björn Lüssem","doi":"10.1002/aelm.202500737","DOIUrl":"https://doi.org/10.1002/aelm.202500737","url":null,"abstract":"Organic Electrochemical Transistors (OECT) have been widely used to detect a myriad of analytes and signals, ranging from glucose content in sweat to brain epileptiform activity. Due to their biocompatibility, small footprint, conformability, and high signal amplification, OECTs can not only be used in wearable, but also in implanted sensor systems, providing superior signal quality. However, although there is a risk of triggering the Foreign Body Reaction (FBR) with implantation, FBR impact on OECTs has rarely been discussed. Therefore, here we evaluate the effect of the FBR fibrotic response on OECT performance, i.e. when the OECT is covered by protein layers, in vitro. In more detail, we analyze poly(3,4-ethylenedioxythiophene):poly (styrene-sulfonate) (PEDOT:PSS) based OECTs and intentionally cover their channels with protein layers commonly formed during FBR, such as albumin, collagen and fibrinogen. Despite slightly increasing devices' switching time, proteins do not hamper their operation. Further coverage by yeast cells as a proof of concept of wound healing process also did not jeopardize OECT functioning, indicating devices could resist the FBR fibrotic response without anti-FBR strategies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"398 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity 高迁移率（>200 cm2 V−1 s−1）透明顶栅IGZO tft与氧化金属栅绝缘子增强电导率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 DOI: 10.1002/aelm.202500696

Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung-Beck Lee

{"title":"High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity","authors":"Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung-Beck Lee","doi":"10.1002/aelm.202500696","DOIUrl":"https://doi.org/10.1002/aelm.202500696","url":null,"abstract":"High-mobility (>200 cm2 V−1 s−1) transparent top gate amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are demonstrated using an oxidized Nb capping layer. The Nb capping layer promotes oxygen out-diffusion from the a-IGZO channel, which in turn generates oxygen vacancies that serve as shallow donors. The partial capping structure selectively modulates carrier density, where the oxygen vacancy-rich, low-resistance region strengthens percolation conduction to enhance mobility, while the uncapped region acts as in-channel potential barriers to maintain ultra-low off-current. The top gate architecture with an Al2O3/NbOx gate stack strengthens electrostatic control and suppresses drain-induced barrier lowering (λDIBL = 6 mV V−1). The resulting device achieves a maximum field-effect mobility of 202 cm2 V−1 s−1, a near-zero threshold voltage, and stable operation under bias stress, while maintaining optical transmittance above 87% in the visible range. This approach provides a scalable and process compatible route for integrating high-mobility oxide thin-film transistors into transparent and low-power display backplanes, enabling the potential replacement of low-temperature polycrystalline silicon (LTPS) driving transistors in high-refresh-rate, high-brightness active-matrix organic light-emitting diode (AMOLED) applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wafer-Scale Bi2O2Se-on-Insulator Thin Films for Integrated Electronics 集成电子用晶圆级Bi2O2Se-on-Insulator薄膜

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 DOI: 10.1002/aelm.202500829

Xi Chen, Penghao Lv, Xintao Yin, Guizhou Xu, Feng Xu

{"title":"Wafer-Scale Bi2O2Se-on-Insulator Thin Films for Integrated Electronics","authors":"Xi Chen, Penghao Lv, Xintao Yin, Guizhou Xu, Feng Xu","doi":"10.1002/aelm.202500829","DOIUrl":"https://doi.org/10.1002/aelm.202500829","url":null,"abstract":"Quasi-2D semiconducting Bi2O2Se has emerged as a promising candidate for beyond-silicon electronics due to its outstanding transport performances. However, large-area growth of high-quality Bi2O2Se films, which is a critical prerequisite for batch fabrication of electronic devices, remains challenging. Here, we report that wafer-scale growth of Bi2O2Se thin films with controllable thicknesses can be achieved on 2-inch insulating sapphire substrates via quasi-van der Waals epitaxy using magnetron sputtering. The obtained films show good spatial uniformity and crystallinity across the wafer, enabling massive fabrication of top-gated Bi2O2Se/HfO2 thin film transistors (TFTs) with reliable n-type enhancement-mode performances, including positive threshold voltages of ∼1.95 V, field-effect mobilities of ∼7.15 cm2 V−1 s−1, high on/off current ratios of ∼105, and subthreshold swings of 1.4 V/dec. The integrated inverter, NAND, and NOR logic gates show desired functionalities with high voltage gains of ∼24.7. This study represents a significant step toward the real application of Bi2O2Se in TFT display technology and complex integrated electronics in a low-cost, scalable, and industry-compatible manner.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computational Microscopy of Spatial Dopant Distribution in Conjugated Polymer 共轭聚合物中掺杂剂空间分布的计算显微镜分析

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 Epub Date: 2024-11-21 DOI: 10.1002/aelm.202400662

Joshua Wheeler, Igor Zozoulenko

引用次数: 0

Using Dopants as Agents to Probe Key Electronic Properties of Organic Semiconductors 用掺杂剂探测有机半导体的关键电子性质

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 Epub Date: 2025-04-07 DOI: 10.1002/aelm.202400988

Artem Fediai, Franz Symalla, Tobias Neumann, Wolfgang Wenzel

{"title":"Using Dopants as Agents to Probe Key Electronic Properties of Organic Semiconductors","authors":"Artem Fediai, Franz Symalla, Tobias Neumann, Wolfgang Wenzel","doi":"10.1002/aelm.202400988","DOIUrl":"10.1002/aelm.202400988","url":null,"abstract":"In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is primarily focused on understanding and enhancing the properties of these doped layers. In contrast, this work shifts the focus from optimizing doped layers to leveraging the doping process as a tool for investigating fundamental material properties. Specifically, the dopant is used as an “agent” to enable the measurement of three critical parameters- ionization potential (IP), electron affinity (EA), and Coulomb interaction energy (VC) – that govern dopant ionization and play central roles in organic electronic devices in general. While these parameters can be measured experimentally, conventional approaches often involve intricate or indirect methods, such as spectral deconvolution, which may introduce ambiguities or fail to represent bulk properties. Here it is shown how consolidating the experimental data and simulations on the dopant ionization fraction and doped-induced conductivity can be used to estimate the mean IP or EA of the embedded organic molecule, and VC of the embedded charge-transfer complex. These results illustrate how measuring and simulating doped materials can provide access to the fundamental design parameters of organic electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400988","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143789584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ion Charge Compensation upon Electrochemical Doping of Redox Polymer Films with Tunable Crosslinking Density 可调交联密度氧化还原聚合物薄膜的电化学掺杂离子电荷补偿

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-23 Epub Date: 2026-01-29 DOI: 10.1002/aelm.202500645

Claudia Malacrida, Klaus Dirnberger, El Mahdi Halim, Ozlem Sel, Hubert Perrot, Sabine Ludwigs

{"title":"Ion Charge Compensation upon Electrochemical Doping of Redox Polymer Films with Tunable Crosslinking Density","authors":"Claudia Malacrida, Klaus Dirnberger, El Mahdi Halim, Ozlem Sel, Hubert Perrot, Sabine Ludwigs","doi":"10.1002/aelm.202500645","DOIUrl":"10.1002/aelm.202500645","url":null,"abstract":"The electrochemical doping behavior of thin films of redox-active copolymers of vinyl(triphenylamine, (TPA)) and styrene (S) with differing ratios from 100:0 (PVTPA) to 20-80 (PVTPA-co-PS) is reported. The presence of TPA units in the polymers allows for electrochemical dimerization into tetraphenylbenzidine (TPB) units which act as redox-active π-systems in the crosslinked films. By changing the copolymer ratio, the degree of crosslinking can be tailored which has direct influences on the electrochemical behavior, e.g., visible in the cyclic voltammetry profiles and accompanying in situ conductance measurements. The crosslinked films show reversible oxidation and reduction behavior and are therefore ideal model systems to study mixed conductivity characteristics for mixed conducting polymers. Electrochemical Quartz Crystal Microbalance (EQCM) and ac-electrogravimetry are used to monitor the ion charge compensation process and associated gravimetric changes of the crosslinked films upon electrochemical doping. Our data clearly show that PF6− anion (hexafluorophosphate) transfer presents the major contribution in the charge compensation process along with concomitant acetonitrile solvent contributions. Crosslinked copolymer films show overall lower anion concentrations, which coincides with lower redox-active moieties, and overall lower swelling ratios due to solvent contributions which we assign to the high amount of non-redox-active styrene units compared to the crosslinked homopolymer films.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500645","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room‐Temperature Antiferroelectricity in Titanite (CaTiSiO 5 ) Thin Films 二氧化钛（catisio5）薄膜的室温反铁电性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-03-19 DOI: 10.1002/aelm.202500546

Weirong Yang, Taro Kuwano, Hiroki Taniguchi, Shintaro Yasui

{"title":"Room‐Temperature Antiferroelectricity in Titanite (CaTiSiO 5 ) Thin Films","authors":"Weirong Yang, Taro Kuwano, Hiroki Taniguchi, Shintaro Yasui","doi":"10.1002/aelm.202500546","DOIUrl":"https://doi.org/10.1002/aelm.202500546","url":null,"abstract":"Titanite (CaTiSiO 5 ) has long been considered a promising lead–free antiferroelectric material characterized by the antiparallel displacement of Ti atoms within adjacent 1D oxygen octahedral chains. However, this antiferroelectricity has not been experimentally confirmed in recent decades. In this study, titanite thin films were fabricated on (111)Pt/(100)Si substrates using pulsed laser deposition, achieving applied electric fields up to ∼1200 kV/cm. The antiferroelectric response of the deposited titanite was confirmed through the observation of a double hysteresis loop during polarization–electric field measurements performed at room temperature. Notably, increasing the electric field induced the formation of a ferroelectric phase with a low coercive field (∼20 kV/cm), which was not observed in the bulk titanite. Measurement of the dielectric properties between room temperature and 600 K revealed a Curie temperature of ∼470 K, as indicated by a permittivity anomaly. However, the antiferroelectric response disappeared at ∼440 K, which is below the phase transition temperature. In addition, the titanite thin films demonstrated a modest recoverable energy density (0.3 J/cm 3 at ∼200 kV/cm) high energy storage efficiency (∼89% at ∼200 kV/cm).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0