Advanced Electronic Materials最新文献

{"title":"Artificial Cilia for 360° Direction-Sensitive Acoustic Sensing Through Additive Micromanufacturing","authors":"Yikang Li,&nbsp;Dazhi Wang,&nbsp;Yiwen Feng,&nbsp;Chang Liu,&nbsp;Xu Chen,&nbsp;Zefei Li,&nbsp;Xiangji Chen,&nbsp;Ran Zhang,&nbsp;Xiaopeng Zhang,&nbsp;Shiwen Liang,&nbsp;Liujia Suo,&nbsp;Weiwei Li,&nbsp;Guo Liu,&nbsp;Jifei Liu,&nbsp;Tiesheng Wang","doi":"10.1002/aelm.202500192","DOIUrl":"10.1002/aelm.202500192","url":null,"abstract":"<p>Directional acoustic sensing can be used for localization and detection, has a wide range of applications in various fields, including rescue robotics, drone positioning, and underwater navigation. It is, however, a challenge to sense both the amplitude and direction of the acoustic waves with a simple sensor design. In this paper, a series of artificial cilia is prepared using additive micro-manufacturing technologies for direction-sensitive acoustic sensing, including electrospray and 3D micro-direct ink writing. The response of the artificial cilia at resonance is significantly enhanced, while the resonance frequencies decrease with increasing length, and the response increases due to the amplification. Two resonances are achieved on a cilium by printing two independent electrode-to-electrode interconnect bridges. Two signal channels of the artificial cilia produce an ‘8’-shaped loop by varying acoustic excitation angles, showing that both amplitude ratio and phase difference are direction-dependent. The two voltages of the artificial cilia can be decoupled to produce different frequencies, amplitudes, and phase differences, thus enabling directional detection of multiple sound sources. The direction-sensitive acoustic sensing is achieved by micro-manufacturing artificial cilia. This effort opens an avenue in the fields of cochlear and device detection with promising applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500192","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancing Solar Energy with Cs2TlAsI6 Double Halide Perovskite: A Simulation-Driven Approach for High-Efficiency Solar Cell","authors":"Md. Tarekuzzaman,&nbsp;Khandoker Isfaque Ferdous Utsho","doi":"10.1002/aelm.202500312","DOIUrl":"10.1002/aelm.202500312","url":null,"abstract":"<p>Perovskite solar cells (PSCs) are emerging as promising candidates for next-generation photovoltaics due to their remarkable optoelectronic properties. In this study, SCAPS-1D(Solar cell Capacitance Simulator) simulations are employed to evaluate the photovoltaic performance of a lead-free double perovskite, Cs₂TlAsI₆, as an absorber material. A total of 54 device architectures are systematically explored by combining six different electron transport layers (ETLs: Ws₂, TiO₂, C₆₀, PCBM, IGTO, and LBSO) with nine-hole transport layers (HTLs: CBTS, Cu₂O, CuI, CuSCN, P3HT, PEDOT: PSS, PTAA, GaAs, and CdTe), using Ni as the back contact. The ITO/Ws₂/Cs₂TlAsI₆/Cu₂O/Ni configuration achieves the highest power conversion efficiency (PCE) of 26.92%. Further optimization examines the influence of absorber thickness, ETL hthickness, and defect densities on performance. Detailed analyses include band alignment (VBO/CBO), interface defects, carrier dynamics, quantum efficiency, capacitance profiles, Mott–Schottky behavior, and impedance spectra. Additionally, the effects of series and shunt resistance, temperature, and back contact selection are investigated. Structural stability of Cs₂TlAsI₆ is confirmed via tolerance factor analysis, including Goldschmidt's and a newly proposed parameter. This simulation-driven architectural optimization offers new insights into the potential of Cs₂TlAsI₆-based PSCs and provides practical design strategies for high-efficiency, lead-free photovoltaic devices.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500312","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144755962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence and Room-Temperature Ferromagnetism in CuO:Ho Dilute Magnetic Semiconductor Materials","authors":"Xun Wang,&nbsp;Yahui Zhai,&nbsp;Zichu Zhang,&nbsp;Zhen Sun,&nbsp;Mingyan Chuai","doi":"10.1002/aelm.202400857","DOIUrl":"10.1002/aelm.202400857","url":null,"abstract":"<p>A chemical vapor-liquid phase deposition and subsequent auxiliary heating method is developed to synthesize crystal CuO and CuO:Ho terrace structures. CuO terrace structures display weak ferromagnetic behavior owing to their unique crystal structure. The ferromagnetism of CuO:Ho terrace structures is significantly enhanced compared to the crystal CuO, and the values of the saturation magnetization present a parabolic trend with the increase of Ho ions doping concentrations. The magnetism of the crystal CuO:Ho terrace structures is mainly derived from the magnetic moment provided by the synergistic effect of Ho ions doping and oxygen vacancies. The saturation magnetizations and the coercivity of CuO:Ho (x = 0.88%) sample are 0.0595 emu g⁻¹ and 90.5 Oe, respectively. The first-principles calculations have been used to investigate the origin of ferromagnetism of the CuO:Ho terrace structures. The result of spin polarization density of states and spatial distribution of the spin density show that the origin of the ferromagnetism for CuO:Ho crystal is mainly attributed to the exchange interactions among the O 1s, Cu 2p, and Ho 4f orbits. The terrace structure of CuO:Ho samples offers a defined interface for controlling spin-polarized states, making it suitable for exploring new spintronic phenomena.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400857","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144715726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Situ Generated Silver Nanoparticles on Boron Nitride Nanosheets Followed by Silane Modification in High-Performance Epoxy Nanocomposites for Advanced Packaging Applications","authors":"Zihao Lin, Alexandar King, Xueyu Hu, Wenbin Fu, Deven S. Shah, Kyoung-Sik Moon, Wen-Hsi Lee, Ching-Ping Wong","doi":"10.1002/aelm.202500245","DOIUrl":"https://doi.org/10.1002/aelm.202500245","url":null,"abstract":"The increasing power density and miniaturization of modern electronic devices have underscored the critical need for efficient thermal management solutions. Boron nitride nanosheets (BNNS) have emerged as promising fillers for thermally conductive epoxy based composite. However, the improvement of composite thermal conductivity is often constrained by interfacial thermal resistance (ITR) at filler-filler and filler-matrix interfaces. The smooth and inert surface of BNNS exacerbates this challenge. To address these issues, silver nanoparticles (AgNPs) are in situ synthesized on BNNS surfaces through a simple annealing process. The BNNS-Ag fillers are subsequently modified using 3-(Mercaptopropyl)triethoxysilane (MPTS) to enhance filler-polymer matrix interactions through thiol-silver and silane-epoxy reaction. This dual modification strategy reduces ITR at both filler-filler and filler-matrix interfaces, enabling the epoxy nanocomposite to achieve a thermal conductivity of 1.64 W (m·K)⁻¹ at 30 wt.% filler loading, representing an 811.1% improvement compared to neat epoxy. Furthermore, the BNNS-AgNPs@MPTS nanocomposite exhibits excellent electrical properties. Meanwhile, both experimental studies and simulations have demonstrated the promising potential of epoxy nanocomposites as high-performance thermal interface materials (TIMs). These findings provide a novel approach to overcoming interfacial thermal resistance while maintaining high electrical insulation, advancing the design of polymer composites for next-generation advanced electronic packaging applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144715381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shaping Magnetic Liquid Metals Into 3D Leakage‐Free, Shape‐Programmable Structures and Electronics","authors":"Yongyu Lu, Zizheng Wang, Vagif Abdulla, Jacob Pfund, Shao‐Hao Lu, Yi Li, Xincheng Zhang, Gavin Fennell, Yuxuan Zhang, Menka Jain, Yi Zhang, Xueju Wang","doi":"10.1002/aelm.202500166","DOIUrl":"https://doi.org/10.1002/aelm.202500166","url":null,"abstract":"Liquid metals (LMs), renowned for their high conductivity and large deformability, find increasing applications including in flexible electronics and soft robotics. One critical process in these applications is the precise patterning of LMs into desired shapes. Yet, existing LM patterning techniques predominantly focus on 2D patterns due to challenges posed by the inherent fluidity and leakage of LMs. Here, we introduce an approach that bypasses these limitations, enabling the creation of complex 3D leakage‐free LM structures. This is achieved through mechanical programming of 2D magnetically immobilized LM paste formed via incorporating magnetic particles into LMs. Such composite effectively resists leakage due to the combined effect of strong magnetic inter‐attraction within the porous magnetic networks and the high surface tension of LMs, while retaining the high conductivity. Diverse freestanding magnetic LM structures, obtained upon LM solidification at ambient temperature, dynamically morph between their 2D and various 3D configurations through multiple cycles of induction heating and magnetic‐assisted reprogramming, featuring large compression resistance and self‐healing capabilities. Potential applications of these leakage‐resistant, shape‐adaptable structures are demonstrated through a helical magnetic LM antenna, which showcases its efficiency in wireless communication and energy harvesting.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144701434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of the AlGaO Spacer Layer on the Performance of β-Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors","authors":"Sheng-Ti Chung,&nbsp;Catherine Langpoklakpam,&nbsp;Yicong Dong,&nbsp;Yi-Kai Hsiao,&nbsp;Shaloo Rakheja,&nbsp;Hao-Chung Kuo,&nbsp;Dong-Sing Wuu,&nbsp;Kenneth Järrendahl,&nbsp;Ching-Lien Hsiao,&nbsp;Edmund Dobročka,&nbsp;Milan Ťapajna,&nbsp;Filip Gucmann,&nbsp;Ray-Hua Horng","doi":"10.1002/aelm.202500291","DOIUrl":"10.1002/aelm.202500291","url":null,"abstract":"<p>This study utilizes a metalorganic chemical vapor deposition system to grow a β-Ga₂O₃ epitaxial layer on a sapphire substrate and fabricate lateral β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs). To enhance the performance of the β-Ga₂O₃ MOSFET, a (Al_xGa_1-x)₂O₃ spacer layer is introduced, with its aluminum (Al) composition modulated through energy band engineering. Three epitaxial samples are designed: a reference sample (without a spacer layer) and samples with (Al_xGa_1-x)₂O₃ layers containing different Al compositions, specifically (Al_0.14Ga_0.86)₂O₃ and (Al_0.21Ga_0.79)₂O₃. The influence of the Al composition in the (Al_xGa_1-x)₂O₃ layer on the two dimensional electron gas (2DEG) is investigated. The results show that a lower Al composition increases the carrier concentration in the 2DEG, boosting the saturation current (I_D,sat) from 2.94 to 7.88 mA mm⁻¹—a significant 168% improvement in the (Al_xGa_1-x)₂O₃/β-Ga₂O₃ stacked epitaxy structure. For the high-Al-composition barrier layer ((Al_0.21Ga_0.79)₂O₃), the higher energy barrier slightly reduces the turn-on current but effectively increases the breakdown voltage, from 210 to 576 V—an improvement of 188%. These improvements result from the higher energy barrier of the β-Ga₂O₃/(Al_xGa_1-x)₂O₃ interface, which reduced the leakage current density. By optimizing the Al composition in (Al_xGa_1-x)₂O₃, transistors suitable for either high performance or high breakdown voltage are successfully produced.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene Aerogel Pressure Sensor Improved by Introducing Intermolecular Forces for Human Motion Detection and Voice Recognition","authors":"Anqi Zhou,&nbsp;Wenchang Yi,&nbsp;Yingjun Wu,&nbsp;Ziyi Wu,&nbsp;Yawei Fu,&nbsp;Tang Liu,&nbsp;Huimin Li,&nbsp;Naizheng Bian,&nbsp;Song Liu","doi":"10.1002/aelm.202500262","DOIUrl":"10.1002/aelm.202500262","url":null,"abstract":"<p>MXene aerogels, known for their exceptional conductivity, hold significant potential in the development of pressure sensors. However, the van der Waals forces that solely exist between pure MXene nanosheets are inadequate for forming aerogels with high elasticity and mechanical properties, thus restricting the broad application of MXene aerogels in sensor technology. In this research, reduced graphene oxide (RGO) is utilized as the primary framework and incorporate polyaniline (PANI) to enhance intermolecular interaction forces, employing freeze-drying techniques to fabricate 3D porous-structured MXene aerogels. This approach significantly enhances the elasticity and electrical responsiveness of the aerogel. The resulting aerogel-based pressure sensor exhibits high sensitivity (4 kPa⁻¹), a wide linear response range (1–20 kPa), rapid response/recovery time (300/100 ms), and excellent stability. The sensor is capable of detecting a variety of pressure signals, from gentle breezes to human motion, and is applied in voice recognition. Using a machine learning framework based on feature engineering, it is possible to accurately identify and classify distinctly pronounced letters from sensor outputs with an accuracy rate as high as 98%. In summary, the high-performance flexible pressure sensor based on MXene aerogel shows great potential for applications in health monitoring, smart wearable devices, and artificial intelligence.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500262","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios","authors":"Sehyeon Choi,&nbsp;Yunseo Lim,&nbsp;Sejin Kim,&nbsp;San Park,&nbsp;Boncheol Ku,&nbsp;Hyungjun Kim,&nbsp;Jaehyun Yang,&nbsp;Bio Kim,&nbsp;Youngseon Son,&nbsp;Hanmei Choi,&nbsp;Changhwan Choi","doi":"10.1002/aelm.202400960","DOIUrl":"10.1002/aelm.202400960","url":null,"abstract":"<p>As the number of word-line layers of vertical flash memory increases, it is difficult to develop high aspect ratio contact further. NAND cell scaling can consistently reduce with advanced fabrication development, but the reliability deterioration becomes challenge as the cell-to-cell distance decreases. In this study, the hydrogen profile in the SiO₂/SiN_x/SiO₂ (ONO) stack is controlled through post annealing treatment and forming accessible deep level traps. When ONO stack employing with SiN_x(x:1.02) is N₂-annealed, Si─Si and Si-dangling bonds are observed. The polaron effect stemming from the Si─Si bonds led to a reduction in charge loss, thereby maintaining 84% of the memory window (MW). Conversely, when ONO stack employing SiN_x(x:1.24) is annealed under forming gas ambient, the MW is increased from 4.68 to 6.57 V. This is attributed to the passivation of interface trap by dissociating N─H bonds and alleviating charge retention by reduction in the density of Si-dangling bond, leading to maintaining 89.7% of MW. These results address the reliability issue caused by trapped-charge instability and successfully mitigate the trade-off relation between MW and retention characteristics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400960","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ReRAM/CMOS Array Integration and Characterization via Design of Experiments","authors":"Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam","doi":"10.1002/aelm.202500203","DOIUrl":"https://doi.org/10.1002/aelm.202500203","url":null,"abstract":"No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance. However, in an array each device needs to be measured in similar operating settings. Therefore, it is necessary to find the optimal settings where most devices will have the best performance across the entire array population. Traditional sampling methods require a large number of tests within an experimental space, which is time‐intensive and resource‐draining. As an alternative, this study proposes the adoption of the Latin square method under the Design of Experiments (DoE) framework for the characterization and performance optimization of arrays of ReRAM devices. This innovative approach drastically reduces the number of experimental tests, thereby offering a faster way to discern the impact of each factor and fine‐tune device parameters effectively. The core objective of employing this DoE technique is to harness its potential for optimizing parameters that significantly enhance the ON/OFF ratio and endurance of ReRAM devices. The optimization technique, performed on a CMOS‐integrated 20 k array of ReRAM devices, increases the device yield by ≈84%, compared to the previous integration with an unoptimized technique.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"7-Methylquinolinium Iodobismuthate Memristor: Exploring Plasticity and Memristive Properties for Digit Classification in Physical Reservoir Computing","authors":"Gisya Abdi,&nbsp;Ahmet Karacali,&nbsp;Alif Syafiq Kamarol Zaman,&nbsp;Marlena Gryl,&nbsp;Andrzej Sławek,&nbsp;Aleksandra Szkudlarek,&nbsp;Hirofumi Tanaka,&nbsp;Konrad Szaciłowski","doi":"10.1002/aelm.202500049","DOIUrl":"10.1002/aelm.202500049","url":null,"abstract":"<p>This study explores 7-methylquinolinium halobismuthates (I, Br, and Cl) with a focus on: (1) the impact of halide composition on their structural and semiconducting properties, and (2) their memristive behavior and plasticity for neuromorphic and reservoir computing. Crystallographic analysis reveals that halide substitution leads to the formation of low-dimensional bismuth-based frameworks. Optical bandgaps, measured via diffuse reflectance spectroscopy, correlate well with density functional theory calculations. Due to solubility constraints, only bismuth iodide complexes are integrated into electronic devices. Current–voltage measurements reveal pinched hysteresis loops, indicative of memristive behavior. Conductivity versus temperature analysis suggests both ionic and electronic conduction pathways. Given their ability to function as synaptic analogs, further tests on transient conductance (potentiation–depression) and spike-time-dependent plasticity are performed. The observed nonlinearity and fading memory characteristics highlight their potential for physical reservoir computing. To evaluate system-level behavior, a device with 16 gold electrodes (1 input, 15 outputs) is fabricated on a silicon substrate coated with the target compound. The device is assessed through benchmark tasks including waveform generation, NARMA-2, memory capacity, and noise response under DC/AC signals. Finally, the system demonstrates 82.26% accuracy in MNIST digit classification and 82% accuracy in spoken digit “2” recognition across six different speakers.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500049","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}