Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze
{"title":"p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties","authors":"Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze","doi":"10.1002/aelm.202500190","DOIUrl":"10.1002/aelm.202500190","url":null,"abstract":"<p>This work reports high structural quality and exceptional electrical transport properties of homoepitaxial <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)- and (–201)-oriented substrates. (010) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> samples exhibit mobility of up to 69.4 cm<sup>2</sup> (V·s)<sup>−1</sup> and stable hole concentrations ≈2.4 × 10<sup>17</sup> cm<sup>−3</sup> from 370 to 700 K. Structural and morphological studies, including XRD, AFM, and STEM, confirm high epitaxial quality, absence of extended defects and minimal strain. (–201) <i>β-</i>Ga<sub>2</sub>O<sub>3</sub> layer, which is simultaneously grown, exhibits typical <i>p</i>-Ga<sub>2</sub>O<sub>3</sub> behavior with observed deep level defects. The hole mobility ranging from 26 to 36 cm<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup> is measured between 420 and 700 K. Comparison of (010) and (–201) orientations reveals distinct anisotropic electrical properties. The findings emphasize the free motion of holes in <i>β-</i>Ga<sub>2</sub>O<sub>3</sub> and the critical role of crystallographic orientation.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144901832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield","authors":"Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara","doi":"10.1002/aelm.202400965","DOIUrl":"10.1002/aelm.202400965","url":null,"abstract":"<p>To address the issue of electromagnetic pollution, the development of materials with favorable microwave attenuation over a wide range of frequency, is imperative. These materials should have lightweight and relatively low thickness. In this study, FeCu nanoparticles (NPs) is synthesized using a co-precipitation method, and a novel FeCu/MWCNT nanocomposite is formed by decorating multi-walled carbon (MWCNT) with FeCu NPs in two different ratios (2:1) & (3:1). The FeCu/MWCNT nanocomposites exhibited superior microwave absorption properties, owing to the increased polarization loss (surface polarization and dipole), conduction loss, ferromagnetic and multiple natural resonance. At 9.67 GHz, FeCu/MWCNT (3:1) displayed a minimum reflection loss (RL<sub>min</sub>) of −39.82 dB with an effective absorption bandwidth which covered 98.2% of X and Ku bands at a thickness of 1.8 mm. The radar cross section (RCS) and far field simulation confirmed that, covering a typical perfect conductor (PEC) sphere with FeCu/MWCNT nanocomposites causes RCS and far field reduction for 30–50 dB and 20 dB, respectively, in comparison with uncovered PEC.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400965","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster
{"title":"Effect of Regiochemistry on Doping and Thermoelectric Properties of n‐Doped Fullerene Derivatives","authors":"Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster","doi":"10.1002/aelm.202500287","DOIUrl":"https://doi.org/10.1002/aelm.202500287","url":null,"abstract":"In recent years, fullerene derivatives have been shown to be a promising candidate for n‐type organic thermoelectrics. Adequate tailoring of the solubilizing side chains has proven to be a successful strategy to enhance the performance of these materials. In this work, three different regioisomers of a fullerene derivative are synthesized with two polar diethylene glycol chains. It is shown how small changes in the chemical design alter the assembly properties of the materials, affecting the electronic transport, miscibility with the dopant, and the dielectric properties. It is found that an intermediate crystallinity enables good miscibility, high dielectric constant, and moderate electronic mobility, resulting in a conductivity of 7.7 S cm<jats:sup>−1</jats:sup> and a power factor of 35 µW m<jats:sup>−1</jats:sup> K<jats:sup>−2</jats:sup>, among the highest reported for n‐doped molecular semiconductors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yi Zhou, John Ratcliffe, Erika Molteni, Ashay Patel, Jingqi Liu, Nikitia Mexia, Jessica Rees, Faith Matcham, Michela Antonelli, Anthea Tinker, Yu Shi, Sebastien Ourselin, Wei Liu
{"title":"Smart Textile Systems for Loneliness Monitoring in Older People Care: A Review of Sensing and Design Innovations","authors":"Yi Zhou, John Ratcliffe, Erika Molteni, Ashay Patel, Jingqi Liu, Nikitia Mexia, Jessica Rees, Faith Matcham, Michela Antonelli, Anthea Tinker, Yu Shi, Sebastien Ourselin, Wei Liu","doi":"10.1002/aelm.202500300","DOIUrl":"10.1002/aelm.202500300","url":null,"abstract":"<p>Loneliness is a critical issue among older people and poses a significant risk factor for various physical and mental health conditions. While recent wearable technologies can monitor behavioral and physiological changes associated with loneliness, existing solutions such as accelerometers and inclinometers often lack comfort and flexibility for long-term monitoring. Smart textile systems offer a viable solution for continuous monitoring by integrating sensors and conductive materials into textiles. However, there remains a critical technological gap that no existing solution integrates multimodal textile-based sensing specifically for loneliness detection. This review addresses that gap by providing a comprehensive review of smart textile technologies for monitoring loneliness in older people, highlighting sensing and design innovations to meet the needs of older users. Key behavioral patterns and physiological symptoms associated with loneliness are explored and suitable wearable sensing technologies, focusing on textile-based solutions that combine comfort, flexibility, and monitoring accuracy, are reviewed. In addition, current advances in data collection, transmission, and analysis are examined for smart textile systems, exploring their potential and challenges in the field of elderly care. By identifying specific design requirements and challenges for monitoring loneliness in older people, this review lays the foundation for future research and development of proactive loneliness detection and intervention.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500300","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144850862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir
{"title":"Simultaneous Fermi Level and Weighted Mobility Engineering in CaCuP-Based Thermoelectrics via Multi-Route Compositional Tuning","authors":"Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir","doi":"10.1002/aelm.202500303","DOIUrl":"10.1002/aelm.202500303","url":null,"abstract":"<p>Ternary metal phosphides emerge as promising thermoelectric materials due to their earth-abundant constituents and inherently complex crystal structures, which favor low lattice thermal conductivity (<i>κ</i><sub>lat</sub>). Here, three routes (slight Ca excess, Zn<sup>2+</sup>, and La<sup>3+</sup> substitution) are investigated to span a broad carrier concentration range, combined with a single parabolic band (SPB) model, confirming that each route shifts Fermi level (<i>E</i><sub>f</sub>) toward the theoretical optimum. Ca<sub>1.05</sub>CuP maintains its weighted mobility (<i>µ</i><sub>W</sub>), delivering the highest power factor (≈1.83 mW·m<sup>−1</sup>·K<sup>−2</sup>) and a <i>zT</i> of ≈0.45 at 823 K. By contrast, Zn- or La-substituted samples experienced modest <i>µ</i><sub>W</sub> reductions yet demonstrate that <i>E</i><sub>f</sub> can be tuned almost continuously by stoichiometric engineering. Collectively, these results establish host-cation stoichiometry control as a pathway for continuous <i>E</i><sub>f</sub> engineering and provide practical guidelines for designing phosphide thermoelectrics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144850861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In-Materia Neuromorphic Properties Induced by Locally Denatured Regions in Sulfonated Polyaniline Networks Incorporating Au Nanoparticles (Adv. Electron. Mater. 12/2025)","authors":"Yuki Usami, Tomoyo Fukumaru, Yuya Kawashima, Tomoki Misaka, Yoichi Otsuka, Hiroshi Ohoyama, Yasuhisa Naitoh, Takuya Matsumoto","doi":"10.1002/aelm.70055","DOIUrl":"10.1002/aelm.70055","url":null,"abstract":"<p><b>Neuromorphic Computation</b></p><p>Bottleneck formation in conduction paths offers a straightforward approach to generating neural-like responses. In article 2400699, Takuya Matsumoto and co-workers present a sulfonated polyaniline random network device, fabricated through simple drop-casting onto a gold nanoparticle array. This configuration promotes electric field concentration and charge accumulation, resulting in distinct nonlinear behavior and hysteresis. At room temperature, the device demonstrates a sum-of-products function with low energy consumption.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 12","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70055","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144782516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha
{"title":"Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways","authors":"Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha","doi":"10.1002/aelm.202500319","DOIUrl":"10.1002/aelm.202500319","url":null,"abstract":"<p>Due to their diverse potential in advanced electronics and energy technologies, electrically conducting metal-organic frameworks (MOFs) are drawing significant attention. Although hexagonal 2D MOFs generally display impressive electrical conductivity because of their dual in-plane (through bonds) and out-of-plane (through π-stacked ligands) charge transport pathways, notable differences between these two orthogonal conduction routes cause anisotropic conductivity and lower bulk conductivity. To address this issue, we have developed the first redox-complementary dual-ligand 2D MOF Cu<sub>3</sub>(HHTP)(HHTQ), featuring a π-donor hexahydroxytriphenylene (HHTP) ligand and a π-acceptor hexahydroxytricycloquinazoline (HHTQ) ligand located at alternate corners of the hexagons, which form either parallel HHTP and HHTQ stacks (AA stacking) or alternating HHTP/HHTQ stacks (AB stacking) along the c-axis. Regardless of the stacking pattern, Cu<sub>3</sub>(HHTP)(HHTQ) supports more effective out-of-plane conduction through either separate π-donor and π-acceptor stacks or alternating π-donor/acceptor stacks, while promoting in-plane conduction through the pushpull-like heteroleptic coordination network. As a result, Cu<sub>3</sub>(HHTP)(HHTQ) exhibits higher bulk conductivity (0.12 S/m at 295 K) than single-ligand MOFs Cu<sub>3</sub>(HHTP)<sub>2</sub> (7.3 × 10<sup>−2</sup> S/m) and Cu<sub>3</sub>(HHTQ)<sub>2</sub> (5.9 × 10<sup>−4</sup> S/m). This work introduces a new design approach to improve the bulk electrical conductivity of 2D MOFs by supporting charge transport in both in- and out-of-plane direcations.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500319","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144792389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze
{"title":"Understanding the Relevance of Percolation on Charge Transport in Random ZnO Nanowire Networks","authors":"Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze","doi":"10.1002/aelm.202500242","DOIUrl":"10.1002/aelm.202500242","url":null,"abstract":"<p>Understanding conductivity in nanowire networks and nanoelectronics remains challenging due to arbitrary morphologies and conduction hierarchies that are inherent to current modeling approaches. Here, an innovative percolation method utilizing a time-efficient shortest-path algorithm is introduced, effectively addressing the arbitrariness in nanowire networks to achieve more realistic conductivity modeling. By applying the percolation framework to arbitrary nanowire assemblies, universalized cluster parameters within the shortest paths are indentified, highlighting the most relevant conductive paths rather than exhaustively examining all nanowire connections. This approach is employed to analyze the two-step conductivity behavior observed in random ZnO nanowire films. The results indicate that tunneling conduction is the primary mechanism below the percolation threshold, while percolative conductivity becomes dominant beyond this threshold. This model precisely calculates tunneling distances within universalized networks, offering accurate conductivity modeling based on nanowire spacing, which previous models have not fully captured. Furthermore, at low nanowire concentrations, charge transport is confined to a single lowest-energy barrier path, as evidenced through both numerical and experimental methods. This comprehensive approach integrates theoretical models and experimental applications to enhance the practical use of random nanowire assemblies in real-world applications. It also enables researchers with limited computational expertise to conduct realistic and accessible conductivity simulations across various nanostructured films and composite materials.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500242","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhanced Vertical Sidewall Quality for Functional AlN Films in 3D Piezo MEMS Applications","authors":"Arsam Ali, Glenn Ross, Mervi Paulasto-Kröckel","doi":"10.1002/aelm.202500066","DOIUrl":"10.1002/aelm.202500066","url":null,"abstract":"<p>Integrating piezoelectric materials onto the vertical surfaces of microelectromechanical systems (MEMS) microstructures enables three-dimensional piezoelectric (3D piezoMEMS) devices, providing multi-axis sensing and actuation capabilities with a reduced device footprint. Metal–organic chemical vapor deposition (MOCVD) is the preferred method for depositing highly crystalline, <i>c</i>-axis oriented aluminium nitride (AlN). However, achieving optimal film quality requires vertical surfaces with minimal roughness and uniformity. Traditional etching techniques, such as wet and plasma etching, often result in rough and irregular surfaces, which challenge the crystal quality of the deposited AlN. In this study, cryogenic deep reactive ion etching (cryo-DRIE) is used to fabricate vertical sidewalls with a root mean square roughness of 26 nm and waviness of 131 nm, followed by hydrogen annealing to further enhance surface quality. Hydrogen annealing reduces the roughness to 7 nm, but the waviness varies depending on the pre-annealing surface conditions. When AlN is deposited on these treated surfaces using MOCVD, the films exhibit high crystal quality comparable to those grown on wet-etched surfaces with extremely low roughness. A slight misalignment of the AlN <i>c</i>-axis orientation with the Si (111) plane is observed, with localized surface irregularities impacting grain alignment in specific areas.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shengyu Yang, Peng Wu, Yanfei Sheng, Yiwen Dong, Zhiwei Li, Tao Wang, Liang Qiao, Fashen Li
{"title":"On the Quality Criteria for Microwave Absorbing Materials","authors":"Shengyu Yang, Peng Wu, Yanfei Sheng, Yiwen Dong, Zhiwei Li, Tao Wang, Liang Qiao, Fashen Li","doi":"10.1002/aelm.202500239","DOIUrl":"10.1002/aelm.202500239","url":null,"abstract":"<p>The majority of published studies evaluating microwave absorbing (MA) materials focus on calculating reflectivity, identifying materials with lower reflectivity as having “good absorption capability”. However, Rozanov et al. posited that reflection minimum depth is insufficient as the quality criteria—a viewpoint that remains under-recognized in scientific discourse so far. This study leverages the quarter-wavelength wavelength relationship in conjunction with transmission line theory to engineer various microwave absorbers composed of ferromagnetic or dielectric materials. The results indicate that each of these absorbers can achieves perfect matching (Z<sub>in</sub>/Z<sub>0</sub> = 1), suggesting that, in practice, they can all achieve the best reflection loss (RL) value of negative infinity, thereby affirming Rozanov ′s perspective. In order to be able to better evaluate MA materials, it is identified that the squared refractive index at perfect matching, denoted as (με)<sub>p</sub>, serves as a robust quality metric. Experimental results indicate that materials with a higher (με)<sub>p</sub> value exhibit superior absorption performance. Furthermore, this metric offers valuable insights for the design of low-frequency thin-layer absorbers and for identifying better MA materials. These findings underscore an indissociable link between MA device performance and MA material characteristics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500239","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144755961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}