Advanced Electronic Materials最新文献_第8页

p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties 具有优异电输运性能的p‐Type β‐Ga2O3同外延薄膜

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202500190

Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze

{"title":"p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties","authors":"Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze","doi":"10.1002/aelm.202500190","DOIUrl":"10.1002/aelm.202500190","url":null,"abstract":"This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β-Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)- and (–201)-oriented substrates. (010) β-Ga2O3 samples exhibit mobility of up to 69.4 cm2 (V·s)−1 and stable hole concentrations ≈2.4 × 1017 cm−3 from 370 to 700 K. Structural and morphological studies, including XRD, AFM, and STEM, confirm high epitaxial quality, absence of extended defects and minimal strain. (–201) β-Ga2O3 layer, which is simultaneously grown, exhibits typical p-Ga2O3 behavior with observed deep level defects. The hole mobility ranging from 26 to 36 cm2 V−1·s−1 is measured between 420 and 700 K. Comparison of (010) and (–201) orientations reveals distinct anisotropic electrical properties. The findings emphasize the free motion of holes in β-Ga2O3 and the critical role of crystallographic orientation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144901832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield FeCu/MWCNT纳米复合材料具有宽的微波吸收带和高减小的雷达截面和远场

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202400965

Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara

{"title":"FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield","authors":"Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara","doi":"10.1002/aelm.202400965","DOIUrl":"10.1002/aelm.202400965","url":null,"abstract":"To address the issue of electromagnetic pollution, the development of materials with favorable microwave attenuation over a wide range of frequency, is imperative. These materials should have lightweight and relatively low thickness. In this study, FeCu nanoparticles (NPs) is synthesized using a co-precipitation method, and a novel FeCu/MWCNT nanocomposite is formed by decorating multi-walled carbon (MWCNT) with FeCu NPs in two different ratios (2:1) & (3:1). The FeCu/MWCNT nanocomposites exhibited superior microwave absorption properties, owing to the increased polarization loss (surface polarization and dipole), conduction loss, ferromagnetic and multiple natural resonance. At 9.67 GHz, FeCu/MWCNT (3:1) displayed a minimum reflection loss (RLmin) of −39.82 dB with an effective absorption bandwidth which covered 98.2% of X and Ku bands at a thickness of 1.8 mm. The radar cross section (RCS) and far field simulation confirmed that, covering a typical perfect conductor (PEC) sphere with FeCu/MWCNT nanocomposites causes RCS and far field reduction for 30–50 dB and 20 dB, respectively, in comparison with uncovered PEC.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400965","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Regiochemistry on Doping and Thermoelectric Properties of n‐Doped Fullerene Derivatives 区域化学对n掺杂富勒烯衍生物掺杂和热电性能的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-18 DOI: 10.1002/aelm.202500287

Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster

引用次数: 0

Smart Textile Systems for Loneliness Monitoring in Older People Care: A Review of Sensing and Design Innovations 智能纺织系统用于老年人护理中的孤独感监测：传感和设计创新综述

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-13 DOI: 10.1002/aelm.202500300

Yi Zhou, John Ratcliffe, Erika Molteni, Ashay Patel, Jingqi Liu, Nikitia Mexia, Jessica Rees, Faith Matcham, Michela Antonelli, Anthea Tinker, Yu Shi, Sebastien Ourselin, Wei Liu

{"title":"Smart Textile Systems for Loneliness Monitoring in Older People Care: A Review of Sensing and Design Innovations","authors":"Yi Zhou, John Ratcliffe, Erika Molteni, Ashay Patel, Jingqi Liu, Nikitia Mexia, Jessica Rees, Faith Matcham, Michela Antonelli, Anthea Tinker, Yu Shi, Sebastien Ourselin, Wei Liu","doi":"10.1002/aelm.202500300","DOIUrl":"10.1002/aelm.202500300","url":null,"abstract":"Loneliness is a critical issue among older people and poses a significant risk factor for various physical and mental health conditions. While recent wearable technologies can monitor behavioral and physiological changes associated with loneliness, existing solutions such as accelerometers and inclinometers often lack comfort and flexibility for long-term monitoring. Smart textile systems offer a viable solution for continuous monitoring by integrating sensors and conductive materials into textiles. However, there remains a critical technological gap that no existing solution integrates multimodal textile-based sensing specifically for loneliness detection. This review addresses that gap by providing a comprehensive review of smart textile technologies for monitoring loneliness in older people, highlighting sensing and design innovations to meet the needs of older users. Key behavioral patterns and physiological symptoms associated with loneliness are explored and suitable wearable sensing technologies, focusing on textile-based solutions that combine comfort, flexibility, and monitoring accuracy, are reviewed. In addition, current advances in data collection, transmission, and analysis are examined for smart textile systems, exploring their potential and challenges in the field of elderly care. By identifying specific design requirements and challenges for monitoring loneliness in older people, this review lays the foundation for future research and development of proactive loneliness detection and intervention.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500300","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144850862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simultaneous Fermi Level and Weighted Mobility Engineering in CaCuP-Based Thermoelectrics via Multi-Route Compositional Tuning 基于CaCuP的热电器件中费米能级和加权迁移率同步工程的多路组合调谐

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-13 DOI: 10.1002/aelm.202500303

Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir

{"title":"Simultaneous Fermi Level and Weighted Mobility Engineering in CaCuP-Based Thermoelectrics via Multi-Route Compositional Tuning","authors":"Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir","doi":"10.1002/aelm.202500303","DOIUrl":"10.1002/aelm.202500303","url":null,"abstract":"Ternary metal phosphides emerge as promising thermoelectric materials due to their earth-abundant constituents and inherently complex crystal structures, which favor low lattice thermal conductivity (κlat). Here, three routes (slight Ca excess, Zn2+, and La3+ substitution) are investigated to span a broad carrier concentration range, combined with a single parabolic band (SPB) model, confirming that each route shifts Fermi level (Ef) toward the theoretical optimum. Ca1.05CuP maintains its weighted mobility (µW), delivering the highest power factor (≈1.83 mW·m−1·K−2) and a zT of ≈0.45 at 823 K. By contrast, Zn- or La-substituted samples experienced modest µW reductions yet demonstrate that Ef can be tuned almost continuously by stoichiometric engineering. Collectively, these results establish host-cation stoichiometry control as a pathway for continuous Ef engineering and provide practical guidelines for designing phosphide thermoelectrics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144850861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Materia Neuromorphic Properties Induced by Locally Denatured Regions in Sulfonated Polyaniline Networks Incorporating Au Nanoparticles (Adv. Electron. Mater. 12/2025) 含金纳米粒子的磺化聚苯胺网络局部变性区诱导的物质内神经形态特性。板牙。12/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-05 DOI: 10.1002/aelm.70055

Yuki Usami, Tomoyo Fukumaru, Yuya Kawashima, Tomoki Misaka, Yoichi Otsuka, Hiroshi Ohoyama, Yasuhisa Naitoh, Takuya Matsumoto

引用次数: 0

Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways 具有正交电荷传输途径的导电氧化还原互补双配体二维石墨MOF

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-05 DOI: 10.1002/aelm.202500319

Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha

{"title":"Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways","authors":"Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha","doi":"10.1002/aelm.202500319","DOIUrl":"10.1002/aelm.202500319","url":null,"abstract":"Due to their diverse potential in advanced electronics and energy technologies, electrically conducting metal-organic frameworks (MOFs) are drawing significant attention. Although hexagonal 2D MOFs generally display impressive electrical conductivity because of their dual in-plane (through bonds) and out-of-plane (through π-stacked ligands) charge transport pathways, notable differences between these two orthogonal conduction routes cause anisotropic conductivity and lower bulk conductivity. To address this issue, we have developed the first redox-complementary dual-ligand 2D MOF Cu3(HHTP)(HHTQ), featuring a π-donor hexahydroxytriphenylene (HHTP) ligand and a π-acceptor hexahydroxytricycloquinazoline (HHTQ) ligand located at alternate corners of the hexagons, which form either parallel HHTP and HHTQ stacks (AA stacking) or alternating HHTP/HHTQ stacks (AB stacking) along the c-axis. Regardless of the stacking pattern, Cu3(HHTP)(HHTQ) supports more effective out-of-plane conduction through either separate π-donor and π-acceptor stacks or alternating π-donor/acceptor stacks, while promoting in-plane conduction through the pushpull-like heteroleptic coordination network. As a result, Cu3(HHTP)(HHTQ) exhibits higher bulk conductivity (0.12 S/m at 295 K) than single-ligand MOFs Cu3(HHTP)2 (7.3 × 10−2 S/m) and Cu3(HHTQ)2 (5.9 × 10−4 S/m). This work introduces a new design approach to improve the bulk electrical conductivity of 2D MOFs by supporting charge transport in both in- and out-of-plane direcations.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500319","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144792389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding the Relevance of Percolation on Charge Transport in Random ZnO Nanowire Networks 了解随机ZnO纳米线网络中渗透与电荷输运的关系

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-04 DOI: 10.1002/aelm.202500242

Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze

{"title":"Understanding the Relevance of Percolation on Charge Transport in Random ZnO Nanowire Networks","authors":"Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze","doi":"10.1002/aelm.202500242","DOIUrl":"10.1002/aelm.202500242","url":null,"abstract":"Understanding conductivity in nanowire networks and nanoelectronics remains challenging due to arbitrary morphologies and conduction hierarchies that are inherent to current modeling approaches. Here, an innovative percolation method utilizing a time-efficient shortest-path algorithm is introduced, effectively addressing the arbitrariness in nanowire networks to achieve more realistic conductivity modeling. By applying the percolation framework to arbitrary nanowire assemblies, universalized cluster parameters within the shortest paths are indentified, highlighting the most relevant conductive paths rather than exhaustively examining all nanowire connections. This approach is employed to analyze the two-step conductivity behavior observed in random ZnO nanowire films. The results indicate that tunneling conduction is the primary mechanism below the percolation threshold, while percolative conductivity becomes dominant beyond this threshold. This model precisely calculates tunneling distances within universalized networks, offering accurate conductivity modeling based on nanowire spacing, which previous models have not fully captured. Furthermore, at low nanowire concentrations, charge transport is confined to a single lowest-energy barrier path, as evidenced through both numerical and experimental methods. This comprehensive approach integrates theoretical models and experimental applications to enhance the practical use of random nanowire assemblies in real-world applications. It also enables researchers with limited computational expertise to conduct realistic and accessible conductivity simulations across various nanostructured films and composite materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500242","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Vertical Sidewall Quality for Functional AlN Films in 3D Piezo MEMS Applications 三维压电MEMS应用中功能性AlN薄膜垂直侧壁质量的提高

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-03 DOI: 10.1002/aelm.202500066

Arsam Ali, Glenn Ross, Mervi Paulasto-Kröckel

{"title":"Enhanced Vertical Sidewall Quality for Functional AlN Films in 3D Piezo MEMS Applications","authors":"Arsam Ali, Glenn Ross, Mervi Paulasto-Kröckel","doi":"10.1002/aelm.202500066","DOIUrl":"10.1002/aelm.202500066","url":null,"abstract":"Integrating piezoelectric materials onto the vertical surfaces of microelectromechanical systems (MEMS) microstructures enables three-dimensional piezoelectric (3D piezoMEMS) devices, providing multi-axis sensing and actuation capabilities with a reduced device footprint. Metal–organic chemical vapor deposition (MOCVD) is the preferred method for depositing highly crystalline, c-axis oriented aluminium nitride (AlN). However, achieving optimal film quality requires vertical surfaces with minimal roughness and uniformity. Traditional etching techniques, such as wet and plasma etching, often result in rough and irregular surfaces, which challenge the crystal quality of the deposited AlN. In this study, cryogenic deep reactive ion etching (cryo-DRIE) is used to fabricate vertical sidewalls with a root mean square roughness of 26 nm and waviness of 131 nm, followed by hydrogen annealing to further enhance surface quality. Hydrogen annealing reduces the roughness to 7 nm, but the waviness varies depending on the pre-annealing surface conditions. When AlN is deposited on these treated surfaces using MOCVD, the films exhibit high crystal quality comparable to those grown on wet-etched surfaces with extremely low roughness. A slight misalignment of the AlN c-axis orientation with the Si (111) plane is observed, with localized surface irregularities impacting grain alignment in specific areas.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the Quality Criteria for Microwave Absorbing Materials 吸波材料质量标准研究

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-01 DOI: 10.1002/aelm.202500239

Shengyu Yang, Peng Wu, Yanfei Sheng, Yiwen Dong, Zhiwei Li, Tao Wang, Liang Qiao, Fashen Li

{"title":"On the Quality Criteria for Microwave Absorbing Materials","authors":"Shengyu Yang, Peng Wu, Yanfei Sheng, Yiwen Dong, Zhiwei Li, Tao Wang, Liang Qiao, Fashen Li","doi":"10.1002/aelm.202500239","DOIUrl":"10.1002/aelm.202500239","url":null,"abstract":"The majority of published studies evaluating microwave absorbing (MA) materials focus on calculating reflectivity, identifying materials with lower reflectivity as having “good absorption capability”. However, Rozanov et al. posited that reflection minimum depth is insufficient as the quality criteria—a viewpoint that remains under-recognized in scientific discourse so far. This study leverages the quarter-wavelength wavelength relationship in conjunction with transmission line theory to engineer various microwave absorbers composed of ferromagnetic or dielectric materials. The results indicate that each of these absorbers can achieves perfect matching (Zin/Z0 = 1), suggesting that, in practice, they can all achieve the best reflection loss (RL) value of negative infinity, thereby affirming Rozanov ′s perspective. In order to be able to better evaluate MA materials, it is identified that the squared refractive index at perfect matching, denoted as (με)p, serves as a robust quality metric. Experimental results indicate that materials with a higher (με)p value exhibit superior absorption performance. Furthermore, this metric offers valuable insights for the design of low-frequency thin-layer absorbers and for identifying better MA materials. These findings underscore an indissociable link between MA device performance and MA material characteristics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500239","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144755961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0