Advanced Electronic Materials最新文献

{"title":"Delocalized Charge Transport in Thermoelectric Composites of Semiconducting Carbon Nanotubes Wrapped with a P-Type Polymer","authors":"Ye Liu,&nbsp;Wenchao Yang,&nbsp;Anirudh Sharma,&nbsp;Diego Rosas-Villalva,&nbsp;Han Xu,&nbsp;Md Azimul Haque,&nbsp;Frédéric Laquai,&nbsp;Derya Baran","doi":"10.1002/aelm.202400216","DOIUrl":"10.1002/aelm.202400216","url":null,"abstract":"<p>In this work, thermoelectric composites comprised of semiconducting single-walled carbon nanotubes (sc-SWCNTs) and a p-type polymer, poly(3-dodecylthiophene-2,5-diyl) (P3DDT), are produced by selectively dispersing the sc-SWCNTs through P3DDT wrapping, followed by solution-based deposition. Through comprehensive electrical and spectroscopic characterizations, coupled with a semi-localized transport model, It is confirmed that, the sc-SWCNT/P3DDT composites, when adequately doped with FeCl₃, can exhibit highly delocalized charge carrier transport. This leads to thermoelectric power factors up to 98.2 µW mK⁻². The efficient charge delocalization is enabled by the reduced coulombic binding energy at high carrier concentration, as well as the small transport barrier between the polymers and the SWCNTs. It is also shown that polymer wrapping of sc-SWCNTs enhances phonon scattering, and sc-SWCNT/P3DDT composites show lower thermal conductivity relative to unsorted SWCNTs mixed with P3DD. This study provides insight into the thermoelectric behavior of hybrid materials and also demonstrates the possibility of using sc-SWCNTs as inclusions in composites for thermoelectrics.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400216","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric Properties of a Family of Benzodifuranone-Based Conjugated Copolymers in Oriented Thin Films Doped Sequentially With NDMBI-H","authors":"Shubhradip Guchait,&nbsp;Diego R. Hinojosa,&nbsp;Nathan James Pataki,&nbsp;Said Oummouch,&nbsp;Laurent Herrmann,&nbsp;Mario Caironi,&nbsp;Michael Sommer,&nbsp;Martin Brinkmann","doi":"10.1002/aelm.202500047","DOIUrl":"10.1002/aelm.202500047","url":null,"abstract":"<p>This study demonstrates the possibility to enhance thermoelectric properties of n-type benzodifuranone-based copolymers using a combination of polymer orientation (using high temperature rubbing) and sequential doping with the dopant N-DMBI-H. It focuses on the impact of the side chain length and the chemical nature of the comonomer (thiophene vs furan) on the efficacy of this methodology that preserves the facile solution-processability of this polymer family and enables effective sequential doping without a thermal activation step. The combination of high temperature rubbing and thermal annealing helps reach a high orientation of the copolymers with the thiophene comonomer regardless of the length of the side chains whereas the furan-based polymer is marginally aligned. The high orientation of thiophene-based copolymers results in a strong improvement of electrical conductivity and power factors reaching up to 9.8 ± 1.6 S cm⁻¹ and 8 ± 3 µW m^−1.K², respectively.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500047","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143641138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge Injection and Transport in an Isoindigo-Based Polymer Transistor","authors":"Zuchong Yang,&nbsp;Daniele Zucchelli,&nbsp;Melissa Berteau-Rainville,&nbsp;Qi Wang,&nbsp;Sydney Mikulin,&nbsp;Ingo Salzmann,&nbsp;Steffen Duhm,&nbsp;Fabrizio Torricelli,&nbsp;Emanuele Orgiu","doi":"10.1002/aelm.202500098","DOIUrl":"10.1002/aelm.202500098","url":null,"abstract":"<p>Polymer semiconductors hold great potential as active materials in (opto)electronic, thermoelectric, and biomedical devices. Their charge transport performance has seen tremendous progress, with mobilities exceeding 1 cm² V⁻¹ s⁻¹ for a variety of donor-acceptor copolymers. Nevertheless, charge injection at the metal/polymer interface is still rather ineffective and poorly understood. In a field-effect transistor, this process is manifested by the contact resistance (<i>R</i>_c) which, for polymers, is several orders of magnitude higher than for their inorganic counterparts. Therefore, an in-depth investigation of the charge injection in metal/donor-acceptor polymer systems is sought-after. Here, the low-temperature dependent <i>R</i>_c and charge transport of a model isoindigo donor-acceptor copolymer-based transistor are studied. The metal/polymer interface is tuned by functionalizing the electrodes with different thiolated self-assembled monolayers (SAMs). <i>R</i>_c in devices with SAM-functionalized electrodes is generally lower and exhibited a weak temperature dependence. Counterintuitively, electrodes functionalized with SAMs expected to lead to an apparently unfavorable energy level alignment displayed the lowest <i>R</i>_c. The Fermi level is found to be pinned at all the encompassed interfaces. An energy-level alignment modeling is employed to understand this behavior. The findings reveal that simply looking at the energy levels alignment of metal/polymer interface does not necessarily lead to reduced <i>R</i>_c.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500098","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143695080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware","authors":"Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer","doi":"10.1002/aelm.202500782","DOIUrl":"https://doi.org/10.1002/aelm.202500782","url":null,"abstract":"This work presents the electrical characterization of sixteen different logic gates built entirely from three-independent-gate reconfigurable transistors. The circuits are fabricated on full-scale 300 mm wafers using the industrial 22 nm fully depleted silicon-on-insulator process of GlobalFoundries, with only minimal modifications to the baseline CMOS flow. The demonstrations include a reconfigurable 2-2 AND-OR-Inverter gate and a fully functional 1-bit adder comprising eight transistors. Quasi-static and transient on-wafer measurements confirm correct functionality and provide insight into the frequency limitations imposed by the current design and test setup. Finally, to explore scalability, a ripple-carry adder is simulated based on the experimentally realized 1-bit adder, illustrating how scaled devices and optimized layouts could enable low-power, CMOS-compatible applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"95 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors","authors":"Huan Wei,&nbsp;Jing Guo,&nbsp;Heng Liu,&nbsp;Tong Wu,&nbsp;Ping-An Chen,&nbsp;Chuanding Dong,&nbsp;Shu-Jen Wang,&nbsp;Stefan Schumacher,&nbsp;Yugang Bai,&nbsp;Ting Lei,&nbsp;Suhao Wang,&nbsp;Yuanyuan Hu","doi":"10.1002/aelm.202400767","DOIUrl":"10.1002/aelm.202400767","url":null,"abstract":"<p>Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P₂BF₄) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P₂BF₄-doped OSC films remains almost unchanged even after heating at temperatures &gt; 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P₂BF₄-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142879849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone-Isatin Acceptor Polymers","authors":"Diego R. Hinojosa,&nbsp;Nathan J. Pataki,&nbsp;Francesca Pallini,&nbsp;Guillaume Freychet,&nbsp;Andreas Erhardt,&nbsp;Kevin Schuller,&nbsp;Selina Olthof,&nbsp;Klaus Meerholz,&nbsp;Christopher R. McNeill,&nbsp;Mario Caironi,&nbsp;Florian Günther,&nbsp;Michael Sommer","doi":"10.1002/aelm.202500213","DOIUrl":"10.1002/aelm.202500213","url":null,"abstract":"<p>Benzodifuranone (BDF)-isatin-based conjugated acceptor copolymers with different stereoelectronic properties are designed, guided by density functional theory calculations. <i>syn</i>- and <i>anti</i>-conformations are predicted to depend on both the presence of chlorine substituents as well as on the steric demand of the comonomer. Backbone torsion decreases with the comonomer of the order thiophene (T) &gt; furan (F) &gt; acetylene (A). Six copolymers of BDF-isatin with T, F, and A are prepared, referred to as H-BDF-T, Cl-BDF-T, H-BDF-F, Cl-BDF-F, H-BDF-A, and Cl-BDF-A. Electrochemically and spectroscopically determined HOMO and LUMO energy levels align qualitatively and confirm a stabilization of the LUMO of the chlorinated copolymers. The thin film microstructures of H-BDF-A and Cl-BDF-A, having a linear backbone, are characterized by an edge-on orientation, while the four remaining copolymers with a more curved backbone predominantly orient face-on. The non-chlorinated furan copolymer H-BDF-F stands out due to its curved yet coplanar backbone, face-on orientation, high degree of crystallinity, close <i>π−π</i> stacking distance, the highest electrical conductivity of 3 S cm⁻¹, the best air stability of electrical conductivity among the series, and an appreciably high power factor. These results demonstrate that theory-guided design allows for optimizing nonhalogenated n-type copolymers of low synthetic complexity for thermoelectric applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500213","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping in Organic Semiconductors: Fundamentals, Materials, and Applications","authors":"Sergi Riera-Galindo","doi":"10.1002/aelm.202500846","DOIUrl":"10.1002/aelm.202500846","url":null,"abstract":"&lt;p&gt;The controlled doping of organic semiconductors has emerged as a central research direction in organic electronics, driven by the recognition that precise manipulation of carrier density is essential for fully exploiting the unique properties of these materials. Symposium T at the 2024 Spring Meeting of the European Materials Research Society (E-MRS) underscored the need for a deeper and more unified understanding of these processes. The invited contributions assembled in this Special Issue of &lt;i&gt;Advanced Electronic Materials&lt;/i&gt; reflect the significant progress being made toward predictive doping strategies and rational materials design.&lt;/p&gt;&lt;p&gt;One major theme addressed in this collection is the advancement of n-type doping and its implications for organic thermoelectrics. Several articles demonstrate how molecular structure, regiochemistry, and processing conditions determine the efficiency and stability of n-doped systems. Fullerene derivatives with controlled regiochemistry (202500287) reveal how crystallinity and dopant miscibility influence both conductivity and thermoelectric performance. Benzodifuranone copolymers exhibit greatly enhanced electronic transport when high backbone alignment is combined with sequential doping using N-DMBI-H. (202500047). Structural variations in benzodifuranone–isatin acceptor polymers (202500213) further demonstrate how backbone conformation governs morphology and ultimately thermoelectric behavior. The study of charge injection and transport in isoindigo–bithiophene polymers (202500098) provides insights into how molecular structure governs doped transport in field-effect devices. The contributions (202400988, 202400767) further extend the range of n-type materials and doping strategies by introducing new molecular backbones, dopant–polymer combinations, and process-compatible approaches. Together, these studies advance the understanding and application of n-type doping in organic semiconductors.&lt;/p&gt;&lt;p&gt;Progress in p-type doping and hybrid transport systems is also well represented. The use of proton-coupled electron transfer enables bandgap-dependent doping in semiconducting carbon nanotube networks (202400817), where the doping level depends on both the chemical environment and the nanotube diameter. Hybrid thermoelectric composites, formed by wrapping semiconducting carbon nanotubes with a p-type polymer (202400216), demonstrate how interfacial design can promote delocalized charge transport. Improvements in dip-coated conjugated polymer films (202400695) show that processing conditions, particularly the Landau–Levich and evaporation regimes, which govern polymer packing and dopant–host interactions, have a decisive influence on thermoelectric performance. Redox-active copolymer films based on vinyl(triphenylamine) and styrene (202500645) provide a model system to study mixed ionic–electronic conduction, where variations in crosslinking density and polymer architecture directly influence reversible redo","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 6","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500846","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Advances in Programmable Metasurfaces and Meta-Devices","authors":"Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu","doi":"10.1002/aelm.202500818","DOIUrl":"https://doi.org/10.1002/aelm.202500818","url":null,"abstract":"Programmable metasurfaces enable various novel functionalities, including real-time beam steering, high-resolution imaging, adaptive wireless communications, and so on, by dynamically tuning electromagnetic wavefronts. These capabilities hold significant promise for transformative applications in reconfigurable antennas, smart sensing systems, and encrypted data transmission within emerging 5G/6G networks. In this article, we provide a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, encompassing various control mechanisms including electrical, thermal, optical and mechanical tuning. We begin by discussing electrically controlled metasurfaces based on Positive-Intrinsic-Negative(PIN) diodes or varactor diodes, highlighting their reconfigurable applications in beam scanning, imaging, and wireless communications. The review then explores the distinct advantages of liquid crystals and graphene in achieving dynamic electromagnetic control, along with representative devices. Additionally, we analyze thermally controlled metasurfaces that utilize &lt;span data-altimg=\"/cms/asset/64548522-b4a7-49ad-bd33-caa25aa7ec22/aelm70334-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"2\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm70334-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-msub data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"upper V upper O 2\" data-semantic-type=\"subscript\"&gt;&lt;mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-script style=\"vertical-align: -0.15em;\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;/mjx-script&gt;&lt;/mjx-msub&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"urn:x-wiley:2199160X:media:aelm70334:aelm70334-math-0001\" display=\"inline\" location=\"graphic/aelm70334-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"&gt;&lt;semantics&gt;&lt;msub data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-role=\"unknown\" data-semantic-speech=\"upper V upper O 2\" data-semantic-type=\"subscript\"&gt;&lt;mi data-semantic-=\"\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"&gt;VO&lt;/mi&gt;&lt;mn data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;2&lt;/mn&gt;&lt;/msub&gt;${rm VO}_2$&lt;/annotation&gt;&lt;/semantics&gt;&lt;/math&gt;&lt;/mjx-assistive-mml&gt;&lt;/mjx-container&gt; and chalcogenide phase-change materials, as well as optically controlled metasurfaces driven by structu","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light","authors":"P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García-López, C. P. Collier","doi":"10.1002/aelm.202500759","DOIUrl":"https://doi.org/10.1002/aelm.202500759","url":null,"abstract":"A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto a bolaamphiphilic axle was incorporated into droplet interface bilayers (DIBs). The azobenzene groups on the ring underwent quasi-reversible, photoisomerization-induced cycling between <b>1-</b><i>E</i> and <b>1</b>-<i>Z</i> configurations when irradiated with 370 and 467 nm light, respectively, enabling programmable access to different history-dependent electrical behaviors from the same membrane. In the <b>1</b><i>-E</i> configuration, bilayers exhibited type-IIactive memristance that coincided with increasingly elevated ionic conduction, associated with progressively enhanced bilayer permeability during voltage cycling. In the <b>1</b><i>-Z</i> configuration, bilayers displayed type-I, passive memcapacitive behavior, reflecting tighter lipid packing and reduced ionic permeability. Photoswitching also yielded a nonvolatile, photoresponsive memcapacitor that could be modulated repetitively with negligible loss, likely via reversible changes in membrane thickness. Concurrent ohmic leakage currents across the membrane were less than 0.3%. These results agree with previous studies with increasing membrane permeability using photoswitchable rotaxanes and provide new insights into the coupling between volatile and nonvolatile memcapacitance during photoisomerization. More broadly, they demonstrate a new strategy for the manipulation of neuromorphic behaviors in soft materials using light, with implications for brain-inspired computation and sensing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Capacitive versus Faradaic Microelectrodes for Extracellular Stimulation: A Fully Coupled FEM–Hodgkin–Huxley Study of Thresholds and Current Redistribution","authors":"Aleksandar Opančar, Eric Daniel Głowacki, Vedran Đerek","doi":"10.1002/aelm.202500867","DOIUrl":"https://doi.org/10.1002/aelm.202500867","url":null,"abstract":"Extracellular microstimulation depends on neuronal excitability and on how current enters the electrolyte through the electrode–electrolyte interface and the cell–electrode cleft. Here we compare two ideal interface limits—capacitive (polarizable) and Faradaic (non-polarizable)—using a fully coupled finite-element model linked to a Hodgkin–Huxley neuron with an explicit axon initial segment. Using square current pulses, we quantify activation thresholds as the charge delivered per unit electrode area. We consider 10 µm (AIS-aligned) and 100 µm (soma-aligned) disk electrodes and vary the cleft gap from 100 nm to 2 µm, spanning typical adherent multielectrode-array conditions. Across all geometries, capacitive interfaces require less charge density to trigger spikes than Faradaic interfaces, with the advantage increasing in tighter clefts. Time-resolved maps show that both interfaces initially exhibit edge crowding; however, capacitive charging locally increases interfacial impedance and redistributes current toward regions beneath the cell, whereas Faradaic contacts remain near-equipotential and sustain an edge-dominated pattern. All operating points fall below conservative Shannon safety limits. These results clarify when capacitive microelectrodes can outperform Faradaic ones under current control and provide guidance for MEA design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"86 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}