Advanced Electronic Materials最新文献_第8页

Enhanced Coupling Between Soft Ferromagnetism and Displacive Ferroelectricity in the Pb-Site Modified PbFe1/2Nb1/2O3 铅锡改性 PbFe1/2Nb1/2O3 中软铁磁性与位移铁电性之间的耦合增强

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-16 DOI: 10.1002/aelm.202400370

Ji-Hun Park, Jae-Hyeon Cho, Nyun Jong Lee, Hyun-Jae Lee, Ju-Hyeon Lee, Geon-Ju Lee, Frederick P. Marlton, Motohiro Suzuki, Manuel Hinterstein, Yoon Seok Oh, Ji-Won Choi, Geon-Tae Hwang, Jun Hee Lee, Sanghoon Kim, Kee Hoon Kim, Wook Jo

{"title":"Enhanced Coupling Between Soft Ferromagnetism and Displacive Ferroelectricity in the Pb-Site Modified PbFe1/2Nb1/2O3","authors":"Ji-Hun Park, Jae-Hyeon Cho, Nyun Jong Lee, Hyun-Jae Lee, Ju-Hyeon Lee, Geon-Ju Lee, Frederick P. Marlton, Motohiro Suzuki, Manuel Hinterstein, Yoon Seok Oh, Ji-Won Choi, Geon-Tae Hwang, Jun Hee Lee, Sanghoon Kim, Kee Hoon Kim, Wook Jo","doi":"10.1002/aelm.202400370","DOIUrl":"https://doi.org/10.1002/aelm.202400370","url":null,"abstract":"Albeit having great potential toward unprecedented type of applications such as magnetoelectric (ME) sensors and memories, practically useful single-phase multiferroics that show large coupling between ferromagnetism and ferroelectricity at ambient temperatures are still lacking. Here, the discovery of a new type of perovskite ferroelectrics (Pb,M)(Fe1/2Nb1/2)O3 (M = Fe, Co, Ni) is reported with a magnetically-active metal ion introduced into a cuboctahedrally-coordinated Pb position, which exhibits enhanced ME coupling owing to the development of simultaneous soft-ferromagnetism and lone-pair ferroelectricity persistent above room temperature. These Pb-site engineered (Pb,M)(Fe1/2Nb1/2)O3 perovskites exhibit a ME coupling coefficient of ≈40–60 ps m−1, a saturated electric polarization of 14–17 µC cm−2 and a saturation magnetization of 0.15–0.3 µB f.u−1. X-ray absorption spectroscopy combined with first-principles calculations demonstrates that the induced ferromagnetism originates from the ferromagnetic superexchange interaction coming from ≈90° bonding between the magnetic ions at the Pb site. The present discovery of the enhanced ME coupling in the Pb-site engineered perovskite ferroelectrics may provide unforeseen opportunities for applying conventional displacive ferroelectricity in the field of spintronics where ferromagnetism is essentially required.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142444361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic Electrochemical Transistors: From Lithography to Large-Scale Printing 有机电化学晶体管：从光刻到大规模印刷

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-16 DOI: 10.1002/aelm.202400474

Ling Huang, Dezhen Zhao, Xinwen Yan, Xu Liu, Qingqing Sun, Huige Yang, Xuying Liu, Hanyu Jia

引用次数: 0

Monolayer MoS2 and WS2 for Vertical Circular- Polarized-Light-Emitting Diode: from Fundamental Understanding to Device Architecture 用于垂直环形偏振发光二极管的单层 MoS2 和 WS2：从基础理解到器件结构

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-16 DOI: 10.1002/aelm.202400381

Gayatri Swain, Gyu Jin Choi, Jin Seog Gwag, Youngsoo Kim

{"title":"Monolayer MoS2 and WS2 for Vertical Circular- Polarized-Light-Emitting Diode: from Fundamental Understanding to Device Architecture","authors":"Gayatri Swain, Gyu Jin Choi, Jin Seog Gwag, Youngsoo Kim","doi":"10.1002/aelm.202400381","DOIUrl":"https://doi.org/10.1002/aelm.202400381","url":null,"abstract":"Light-emitting diodes (LEDs) have revolutionized lighting and displays due to their numerous advantages over conventional lighting mechanisms. Moreover, the directional nature of luminescent materials has spurred significant advancements in the development of circularly polarized LEDs, which hold transformative potential for applications in biomedical imaging, liquid crystal displays, spintronics, and valleytronics. The performance of circularly polarized LEDs mainly depends on the emitter material, which is this study's focus. In particular, semiconducting-phase 2D monolayer MoS2 and WS2 are attractive emitter-material candidates owing to their bandgap versatility, high carrier mobility, high exciton binding energy, polarized-light-emission properties, and unique spin–valley coupling. Several works have examined the fundamental light-emission properties of monolayer MoS2 and WS2 from the perspectives of optoelectronic concepts, material fabrication, and device construction. This paper presents approaches to control, tune, and enhance these properties of monolayer MoS2 and WS2. Possible guidelines for monolayer-material synthesis (top-down and bottom-up approaches) and device engineering of vertically stacked MoS2 and WS2 are presented. Finally, the review considers the material topological characteristics, outlines the challenges and potential of monolayer MoS2 and WS2 for developing high-performance commercial circularly polarized LED devices, and proposes a technological roadmap for leveraging other monolayer transition metal dichalcogenide systems in optoelectronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"71 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142440397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacial Reaction Boosts Thermal Conductance of Room-Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C 界面反应提高了室温集成半导体界面的导热性，使其温度稳定在 1100 °C 以下

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-14 DOI: 10.1002/aelm.202400387

Xiaoyang Ji, Zifeng Huang, Yutaka Ohno, Koji Inoue, Yasusyohi Nagai, Yoshiki Sakaida, Hiroki Uratani, Jinchi Sun, Naoteru Shigekawa, Jianbo Liang, Zhe Cheng

{"title":"Interfacial Reaction Boosts Thermal Conductance of Room-Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C","authors":"Xiaoyang Ji, Zifeng Huang, Yutaka Ohno, Koji Inoue, Yasusyohi Nagai, Yoshiki Sakaida, Hiroki Uratani, Jinchi Sun, Naoteru Shigekawa, Jianbo Liang, Zhe Cheng","doi":"10.1002/aelm.202400387","DOIUrl":"https://doi.org/10.1002/aelm.202400387","url":null,"abstract":"Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance (ultra)wide bandgap (WBG or UWBG) electronics. Advanced heterogeneous bonding of high-thermal-conductivity WBG thin films and substrates not only constitutes a pivotal technique for fabricating these electronics but also offers potential solutions for thermal management. This study presents the integration of 3C-silicon carbide (SiC) thin films and diamond substrates through a surface-activated bonding technique. Notably, following annealing, the interfaces between 3C-SiC and diamond demonstrate an enhancement in thermal boundary conductance (TBC), reaching up to ≈300%, surpassing all other grown and bonded heterointerfaces. This enhancement is attributed to interfacial reactions, specifically the transformation of amorphous silicon into SiC upon interaction with diamond, which is further corroborated by picosecond ultrasonics measurements. After annealing at 1100 °C, the achieved TBC (150 MW m−2 K−1) is among the highest among all bonded diamond interfaces. Additionally, the visualization of large-area TBC, facilitated by femtosecond laser-based time-domain thermoreflectance measurements, shows the uniformity of the interfaces which are capable of withstanding temperatures as high as 1100 °C. The research marks a significant advancement in the realm of thermally conductive WBG/substrate bonding, which is promising for enhanced cooling of next-generation electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"229 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142431455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the Effect of Incorporating Dimethylaminopropyl Side Chains into a Naphthalenediimide‐Based Conjugated Polymer 研究在萘二亚胺基共轭聚合物中加入二甲基氨基丙基侧链的效果

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-11 DOI: 10.1002/aelm.202400610

Tzu‐Lun Liu, Yu‐Ying Lai

{"title":"Investigating the Effect of Incorporating Dimethylaminopropyl Side Chains into a Naphthalenediimide‐Based Conjugated Polymer","authors":"Tzu‐Lun Liu, Yu‐Ying Lai","doi":"10.1002/aelm.202400610","DOIUrl":"https://doi.org/10.1002/aelm.202400610","url":null,"abstract":"Two approaches—fractional side‐chain truncation and complementary interactions—are employed in this study. In fractional side‐chain truncation, NDIDmap with the naphthalene diimide (NDI) group and the 3‐(dimethylamino)propyl (Dmap) chain is incorporated into P(NDI2OD‐T2), yielding various copolymers. Increasing the amount of NDIDmap in the polymer enhances π‐isotropy, which can improve charge transport. In complementary interactions, the NDIDmap group complexes with tris(pentafluorophenyl)borane (BCF) via complementary N–B interactions. Adding BCF to a naphthalenediimide‐based conjugated polymer with NDIDmap enhances the coherence length (Lc) of π‐stacking. However, the elongated Lc does not result in superior electron mobility, challenging the conventional perspective that long‐range π‐order is crucial for charge transport. For comparison, triphenylamine (TPA), which is electronically distinct from BCF, is used. TPA affects the thin‐film microstructure and charge‐transport parameters differently from BCF. Although the improvement in electron mobility is not very significant, this study demonstrates the effects of fractional side‐chain truncation and complementary interactions on the thin‐film microstructure and charge transport of naphthalenediimide‐based conjugated polymers, paving the way for further side‐chain engineering.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142415708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors 铑合金β氧化镓材料：新型三元超宽带隙半导体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-11 DOI: 10.1002/aelm.202400547

Xian-Hu Zha, Yu-Xi Wan, Shuang Li, Dao Hua Zhang

{"title":"Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors","authors":"Xian-Hu Zha, Yu-Xi Wan, Shuang Li, Dao Hua Zhang","doi":"10.1002/aelm.202400547","DOIUrl":"https://doi.org/10.1002/aelm.202400547","url":null,"abstract":"Beta gallium oxide (β-Ga2O3) is an ultra-wide-bandgap semiconductor with advantages for high-power electronics. However, the power resistance of β-Ga2O3-based devices is still much lower than its material limit due to its flat band dispersion at its valence band maximum (VBM) and the difficulty for p-type doping. Here, β-Ga2O3-based new type ternary ultra-wide bandgap semiconductors: β-(RhxGa1-x)2O3’s alloys are reported with x up to 0.5. The energy and band-dispersion curvature of β-Ga2O3’s VBM are significantly enhanced via Rh-alloying. Compared to that in β-Ga2O3, the β-(RhxGa1-x)2O3’s VBMs increase more than 1.35 eV. The hole mass of β-(Rh0.25Ga0.75)2O3 is only 52.3% of that in β-Ga2O3. The decreased hole mass is correlated with the equal Rh─O bond along the b-axis. Thanks to the simultaneous rise of conduction band minimums, the bandgaps of β-(RhxGa1-x)2O3 are still much larger than that in commercial silicon carbide. Moreover, the alloys show direct bandgaps in a wide range of x, and a direct and ultra-wide bandgap of 4.10 eV is determined in β-(Rh0.3125Ga0.6875)2O3. Combined with the enhanced valence energy, reduced hole mass, and ultra-wide bandgap, the β-(RhxGa1-x)2O3 can be candidate semiconductors for a new generation of power electronics, ultraviolet optoelectronics, and complementary metal-oxide-semiconductor (CMOS) technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142405567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses 非晶 In-Al-Sn-O 薄膜晶体管及其在光电人工突触中的应用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-11 DOI: 10.1002/aelm.202400457

Xiao Feng, Yu Zhang, Xinming Zhuang, Xianjin Feng

{"title":"Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses","authors":"Xiao Feng, Yu Zhang, Xinming Zhuang, Xianjin Feng","doi":"10.1002/aelm.202400457","DOIUrl":"https://doi.org/10.1002/aelm.202400457","url":null,"abstract":"In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being studied. The IATO films possessed amorphous structure, flat surface morphology, high visible light transmittance, and wide optical bandgap ≈4.20 eV before and after annealing even at 400 °C. The minimal surface roughness and internal defects are obtained for the 300 °C annealed IATO film. Correspondingly, the 300 °C annealed TFTs demonstrated the best overall performance including high saturation mobility (8.55 ± 0.62 cm2 V−1 s−1), low subthreshold swing (0.40 ± 0.07 V dec−1), ideal on/off current ratio (1.25 ± 0.09 × 108), and negligible hysteresis (0.23 ± 0.03 V) values. The 300 °C annealed TFTs are then applied in optoelectronic artificial synapses and exhibit typical synaptic properties, including excitatory postsynaptic current, paired‐pulse facilitation, and short‐term plasticity to long‐term plasticity conversion in response to light stimulation. The international Morse code and repetitive learning‐forgetting behavior of the human brain are also successfully simulated. In particular, an emotion‐memory efficiency model is proposed and the emotion effect on human memory efficiency is successfully imitated via the regulation of gate voltage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"123 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142415709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

From Plant Oils to High-Performance Supercapacitor Electrode: Poly(guaiazulene) via Photopolymerization 从植物油到高性能超级电容器电极：通过光聚合反应制备聚愈创木烯

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-11 DOI: 10.1002/aelm.202400570

Sena Ermis, Sinem Altinisik, Fahri Catoglu, Yusuf Yagci, Erdem Sari, Steffen Jockusch, Sermet Koyuncu, Kerem Kaya

{"title":"From Plant Oils to High-Performance Supercapacitor Electrode: Poly(guaiazulene) via Photopolymerization","authors":"Sena Ermis, Sinem Altinisik, Fahri Catoglu, Yusuf Yagci, Erdem Sari, Steffen Jockusch, Sermet Koyuncu, Kerem Kaya","doi":"10.1002/aelm.202400570","DOIUrl":"https://doi.org/10.1002/aelm.202400570","url":null,"abstract":"Due to the increasing global demand for electrical energy, the fabrication of advanced energy storage devices, such as supercapacitors (SCs), with outstanding performance is of paramount importance. Herein, the facile light-induced synthesis of a conjugated conductive polymer, namely, poly(guaiazulene) (PGz) is reported on, using a naturally available, low-cost monomer, guaiazulene (Gz). PGz and PGz_rGO (obtained by combining PGz with reduced graphene oxide (rGO)) exhibited high-performance supercapacitor (SC) electrode properties, including remarkable specific capacitance (52.75 F g−1 at 0.24 A g−1 and 258.6 F g−1 at 5.00 A g−1, respectively), excellent cycling stability (97.1% and 94.0% stability after 5000 cycles), high power density (95.5 and 2118.8 W kg−1), and, most importantly, high energy density (5.81 and 30.57 Wh kg−1). These superior features are attributed to the hierarchical porous nature and high electrical/ionic conductivities of the photochemically obtained PGz. Contrary to previous techniques that require harsh reaction conditions, such as carbonization and coupling reactions, the reported photopolymerization involves solely the irradiation of an ethyl acetate solution of a Gz-organic photoinitiator (2-bromoacetophenone) mixture. The photochemical synthesis described here provides a powerful method to produce a sustainable and high-performance SC electrode material, offering a great alternative to commercial SCs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142405565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal-Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity 用于高灵敏度宽带光电探测器的多层 VSe2 中的金属-半导体相变

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-11 DOI: 10.1002/aelm.202400682

Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo

{"title":"Metal-Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity","authors":"Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo","doi":"10.1002/aelm.202400682","DOIUrl":"https://doi.org/10.1002/aelm.202400682","url":null,"abstract":"2D 1T-VSe2 is a charge-density wave (CDW) system that also exhibits room-temperature ferromagnetism, making it promising for photodetecting devices. However, the sensitivity of 1T-VSe2 photodetectors is limited by the high dark current due to its metallic feature of T-phase VSe2. So far, photodetectors based on semiconducting 2H-phase VSe2 have ever been reported. In this work, the metal-semiconductor phase transition (1T to 2H) in multilayer VSe2 by thermal annealing process, and the fabrication of 2H-VSe2 broadband photodetectors with high sensitivity is reported. The 2H-VSe2 photodetectors exhibit low dark current and a broad spectral range of 405–1550 nm. The responsivity (R) and detectivity (D*) can reach up to 75.26 A W−1 and 1.45 × 1010 Jones at Vsd of 1 V, outperforming photodetectors based on 1T-VSe2 and other 2D materials for the 1550 nm optical communication band. This work showcases a facile method for obtaining the metal-semiconductor phase transition of VSe2 and demonstrates the potential of 2H-VSe2 for high-performance near-infrared photodetectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"78 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142405593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Three-Terminal Memristive Artificial Neuron with Tunable Firing Probability 具有可调触发概率的三端膜性人工神经元

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-10 DOI: 10.1002/aelm.202400432

Mila Lewerenz, Elias Passerini, Luca Weber, Markus Fischer, Nadia Jimenez Olalla, Raphael Gisler, Alexandros Emboras, Mathieu Luisier, Miklos Csontos, Ueli Koch, Juerg Leuthold

{"title":"A Three-Terminal Memristive Artificial Neuron with Tunable Firing Probability","authors":"Mila Lewerenz, Elias Passerini, Luca Weber, Markus Fischer, Nadia Jimenez Olalla, Raphael Gisler, Alexandros Emboras, Mathieu Luisier, Miklos Csontos, Ueli Koch, Juerg Leuthold","doi":"10.1002/aelm.202400432","DOIUrl":"https://doi.org/10.1002/aelm.202400432","url":null,"abstract":"The human brain facilitates information processing via generating and receiving temporal patterns of short voltage pulses, a.k.a. neural spikes. This approach simultaneously grants low-power operation as well as a high degree of noise immunity and fault tolerance at a small footprint and simplistic structure of the neurons. To date, the latter two key features are critically missing from the toolbox of artificial spiking neural network hardware, hindering the development of scalable and sustainable artificial intelligence (AI) platforms. Here, a compact, gate-tunable neuron circuit is demonstrated, and its potential as a functional leaky integrate-and-fire (LIF) neuron is explored. It relies on a single nanoscale three-terminal (3T) memristor device, which has been downscaled by 30% compared to previous work, where the set voltage and, thereby, the spiking probability of the neuron circuit can be widely tuned by the low-voltage operation of the gate electrode. The influence of the gate voltage on the two-terminal (2T) current–voltage characteristics is measured, statistically analyzed, and further utilized in a custom-built LTspice model. The circuit simulations account for the experimentally observed, adjustable set voltage. The presented results demonstrate the merits of 3T memristors as compact, tunable, and versatile artificial neurons for neuromorphic computing applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0