Advanced Electronic Materials最新文献

{"title":"Graphene-Based Oscillators for Biomimetic Neuro-Interfaces","authors":"Konstantin G. Nikolaev,&nbsp;Sergey Grebenchuk,&nbsp;Zhao Jinpei,&nbsp;Kou Yang,&nbsp;Yixin Zhang,&nbsp;Ong Mei Shan,&nbsp;Vitaly Sorokin,&nbsp;Siyu Chen,&nbsp;Qian Wang,&nbsp;Jia Hui Bong,&nbsp;Kostya S. Novoselov,&nbsp;Daria V. Andreeva","doi":"10.1002/aelm.202500219","DOIUrl":"10.1002/aelm.202500219","url":null,"abstract":"<p>Chemical oscillators—such as the Belousov-Zhabotinsky reaction—have long served as model systems for studying non-equilibrium chemical dynamics and as analogues of biological oscillations. However, many biological processes rely on out-of-equilibrium, often oscillatory, ionic fluxes that do not involve chemical reactions. Examples include action potentials in neurons, muscle contraction, cardiac rhythmicity, intracellular calcium signaling, and calcium wave oscillations. Despite these parallels, the development of biomimetic systems compatible with neuromorphic interfaces remains a significant challenge. Here, a strategy is demonstrated to organize oscillating ionic currents by developing ionic transistors composed of graphene oxide and polyelectrolyte, and assembling them into all-ionic integrated circuits. By driving these systems out of equilibrium using external voltages, periodic motion of various ions across defined interfaces is achieved. This behavior, governed by local electric fields arising from unbalanced ionic concentrations, closely mimics biological excitability, such as that observed in neuronal and cardiac systems. These ionic transistors serve as a foundational building block for neuromorphic interfaces, offering a universal platform to emulate complex biological ionic processes with high fidelity.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500219","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145101547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On Ga2O3 Self-Switching Nano-Diodes (Adv. Electron. Mater. 11/2025)","authors":"Glen Isaac Maciel García,&nbsp;Jorge Esteban Bolio,&nbsp;Vishal Khandelwal,&nbsp;Ganesh Mainali,&nbsp;Jose Taboada,&nbsp;Haicheng Cao,&nbsp;Biplab Sarkar,&nbsp;Xiaohang Li","doi":"10.1002/aelm.70036","DOIUrl":"10.1002/aelm.70036","url":null,"abstract":"<p><b>Ga₂O₃ Self-Switching Nano-Diodes</b></p><p>This cover image illustrates a multichannel self-switching nano-diode, highlighting enhanced channel current flow under UV illumination. Additionally, increased relative permittivity in the trench regions also leads to higher current flow. More information can be found in article number 2500177 by Xiaohang Li and co-workers.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 11","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70036","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of the Twist Angle and Spin–Orbit Coupling on the Interlayer Coupling and Optoelectronic Properties of MoS2/WS2 Superlattice Heterostructures","authors":"Shaofeng Wang,&nbsp;Qing Wang,&nbsp;Yuqiang Wu,&nbsp;Mengtao Sun,&nbsp;Wen Liu,&nbsp;Shuo Cao","doi":"10.1002/aelm.202500148","DOIUrl":"10.1002/aelm.202500148","url":null,"abstract":"<p>Twisted 2D bilayer transition metal dichalcogenides (TMDs) heterostructures exhibit rich physical properties due to the interaction of interlayer coupling and moiré superlattice effects. However, the influence of interlayer coupling changes induced by the twist angle on various TMDs properties still requires further exploration. To systematically investigate how the twist angle influences the structural, electronic and optical properties of TMDs, density functional theory (DFT) is used to examine <span></span><math>\u0000 <semantics>\u0000 <msqrt>\u0000 <mn>7</mn>\u0000 </msqrt>\u0000 <annotation>$sqrt 7 $</annotation>\u0000 </semantics></math> MoS₂/WS₂ superlattice heterostructures. Compared with that of the 2H stack, the interlayer coupling effect is weakened in the 21.79° and particularly 38.21° stacked heterostructures. A larger twist angle promotes an indirect-to-direct bandgap transition trend. Additionally, the twist angle can cause interlayer charge redistribution, which varies with the moiré pattern. Moreover, spin‒orbit coupling (SOC) causes a redshift by reducing the bandgap in the absorption spectra, and the twist angle suppresses interlayer direct transitions in the 𝜥 valley and alters the Raman and infrared spectra, with low-frequency Raman modes providing a powerful tool for characterizing changes in interlayer coupling. These findings highlight the critical role of the twist angle in tuning the properties of TMDs heterostructures, with promising implications for optoelectronic and valleytronic applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500148","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145101545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Critical Assessment of Contact Resistance and Mobility in Tin Perovskite Field-Effect Transistors","authors":"Youcheng Zhang,&nbsp;Stefano Pecorario,&nbsp;Xian Wei Chua,&nbsp;Xinglong Ren,&nbsp;Cong Zhao,&nbsp;Rozana Mazlumian,&nbsp;Satyaprasad P. Senanayak,&nbsp;Krishanu Dey,&nbsp;Samuel D. Stranks,&nbsp;Henning Sirringhaus","doi":"10.1002/aelm.202400924","DOIUrl":"10.1002/aelm.202400924","url":null,"abstract":"<p>Recent reports highlight the potential of tin-based perovskite semiconductors for high-performance <i>p</i>-type field-effect transistors (FETs) with mobilities exceeding 20 cm² V⁻¹ s⁻¹. However, these high mobilities—often obtained via two-probe (2P) methods on devices with small channel length-to-width ratios (<i>L/W </i>&lt; 0.5) operating in the saturation regime at high drain-source currents—raise concerns about overestimation due to contact resistance and non-ideal FET characteristics. Here, gated four-point probe (4PP) FET measurements is performed on Hall bar devices (<i>L/W</i> = 5) of Cs_0.15FA_0.85SnI₃, obtaining a consistent mobility of 3.4 cm² V⁻¹ s⁻¹. <i>V_G</i>-dependent 4PP mobility is accurately extracted using the Hofstein and Heiman's MOSFET model. Upon comparing these with gated 2P measurements of narrow-channel FETs (<i>L/W </i> = 0.1) on the same chip, the contact resistance (<i>R_C</i>) is resolved. The 2P linear mobility is underestimated due to voltage drops across <i>R_C</i>, while the 2P saturation mobility is overestimated because of high (<span></span><math>\u0000 <semantics>\u0000 <mfrac>\u0000 <mrow>\u0000 <mi>∂</mi>\u0000 <msub>\u0000 <mi>R</mi>\u0000 <mi>C</mi>\u0000 </msub>\u0000 </mrow>\u0000 <mrow>\u0000 <mi>∂</mi>\u0000 <msub>\u0000 <mi>V</mi>\u0000 <mi>G</mi>\u0000 </msub>\u0000 </mrow>\u0000 </mfrac>\u0000 <annotation>$frac{{partial {R_C}}}{{partial {V_G}}}$</annotation>\u0000 </semantics></math>) near the threshold. Contact resistance effects become more pronounced at lower temperatures. Contact-corrected 4-point-probe (4PP) mobilities are independent of bias conditions and are observed to flatten at temperatures lower than 180 K. Future reports of perovskite FET mobilities should include gated 4PP measurements and use devices with larger <i>L/W</i> ratios to minimize nonidealities arising from contact resistance effects.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400924","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145101310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inkjet Printable Semiconducting Inks for Enhancement‐Mode Organic Electrochemical Transistors","authors":"Alan Eduardo Avila Ramirez, Shofarul Wustoni, Yizhou Zhong, Abdulelah Saleh, Prem D. Nayak, Jokubas Surgailis, Tania Cecilia Hidalgo Castillo, Sahika Inal","doi":"10.1002/aelm.202500123","DOIUrl":"https://doi.org/10.1002/aelm.202500123","url":null,"abstract":"Additive manufacturing technologies offer a promising avenue for advancing the microfabrication of organic electronic devices. In this study, inkjet printable semiconducting inks derived from commercially available p‐type and n‐type conjugated polymers, namely poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and poly(benzimidazobenzophenanthroline) (BBL) are developed. These inks are used to fabricate organic electrochemical transistor (OECT) channels at a deposition resolution of 20 µm with high electrochemical stability under prolonged biasing stress. The versatility of the inks is demonstrated through the fabrication of OECTs on various substrates, including glass, polyimide, and paper, and in one example, all device components are printed exclusively from PEDOT:PSS. The de‐doped PEDOT:PSS channel is integrated with a BBL channel, constructing printed monolithic electrochemical complementary amplifiers performing as a NOT logic gate. Furthermore, The applicability of the PEDOT: PSS‐based enhancement mode device operation in electrochemical sensing, achieving high sensitivity to physiologically relevant concentrations of ascorbic acid is showcased. This work aligns with the objective of democratizing access to advanced electronic materials and devices, facilitating fabrication processes without the need for scarce materials, expensive equipment, or specialized facilities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"109 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Observation of Etching-Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate-All-Around Transistor","authors":"Lan Li,&nbsp;Ran Bi,&nbsp;Xiaomei Li,&nbsp;Zuoyuan Dong,&nbsp;Chao Yan,&nbsp;Shuying Wang,&nbsp;Pengpeng Ren,&nbsp;Ming Li,&nbsp;Xing Wu","doi":"10.1002/aelm.202400943","DOIUrl":"10.1002/aelm.202400943","url":null,"abstract":"<p>The gate-all-around field-effect transistor (GAAFET) provides enhanced electrostatic control and improved current driving capabilities, positioning it as a promising candidate for fin field-effect transistor (FinFET). However, the SiGe selective etching process-induced strain affects the current transportation property along the channel, while the morphology and strain profiles at atomistic scale remain unclear. In this study, the anisotropic etching of the Si/SiGe stack and the selective isotropic etching of the SiGe process is carried out. It is discovered that uneven etching rates in lateral and vertical dimensions of the stack induce non-uniform etching depth within the SiGe layer. High-resolution high-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy (STEM) with strain analysis technique shows that the strain profile in the Si stack is inhomogeneous, and the bottom layer of the nanosheet suffers the highest strain. Technology computer-aided design (TCAD) simulation results at the device level indicate that such inhomogeneous strain profiles reduce the drain current. The findings provide direct proof at the atomistic scale for high-performance manufacturing of advanced GAAFET.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400943","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon-on-Insulator","authors":"Josef Stevanus Matondang,&nbsp;Nikhilendu Tiwary,&nbsp;Glenn Ross,&nbsp;Mervi Paulasto-Kröckel","doi":"10.1002/aelm.202500175","DOIUrl":"10.1002/aelm.202500175","url":null,"abstract":"<p>Silicon-on-insulator (SOI) substrates suffer from heat-confinement and self-heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m⁻¹ K⁻¹ and thermal boundary conductance (TBC) of 147 MW m⁻² K⁻¹. Modified Williamson-Hall (W-H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross-plane heat spreader in our AlN-SOI platform.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500175","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes","authors":"Zhanibek Bizak,&nbsp;Harold F. Mazo-Mantilla,&nbsp;Linqu Luo,&nbsp;Camelia Florica,&nbsp;Georgian Melinte,&nbsp;Thomas D. Anthopoulos,&nbsp;Khaled N. Salama","doi":"10.1002/aelm.202400940","DOIUrl":"10.1002/aelm.202400940","url":null,"abstract":"<p>The intrinsic high non-linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem. However, the reported studies on diodes based on 2D and metal-oxide semiconductors for digital circuits are limited to basic logic gates. The Schottky diodes-based integrated circuit feasibility and scalability discussions are lacking. In this work, the large throughput and cost-effective adhesion lithography in tandem with the solution-based method is used to fabricate integrated functional circuits for Arithmetic Logic Unit (ALU). The self-aligned nanogap separation between interdigitated coplanar aluminum (Al) and gold (Au) electrodes is uniform throughout the fabricated diode width, resulting in a high rectification ratio of 5 × 10⁶. The fundamental logic AND, OR, and XOR gates based on nanogap Schottky diodes are fabricated, from which arbitrary logic and arithmetic functional circuits can be constructed. To demonstrate the large-area integration, a 3-bit Binary Shifter circuit is implemented. The measurement-based Keysight ADS diode model is used to design a complete 4-bit ALU circuit. The excellent circuit-level performance, large-area scalability, design flexibility, and cost-efficiency of logic circuits based on nanogap Schottky diodes make them promising candidates for future Internet of Things applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 12","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400940","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching","authors":"Keval Hadiyal,&nbsp;Ramakrishnan Ganesan,&nbsp;R. Thamankar","doi":"10.1002/aelm.202500159","DOIUrl":"10.1002/aelm.202500159","url":null,"abstract":"<p>Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi-functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn₃O₄ nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 10³ is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 2⁴). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step-wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G₀. The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next-generation memories showing quantum effects in neuromorphic computing architectures.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500159","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-High Mobility Atomically-Ordered InGaZnO Transistors Through Atomic Layer Deposition","authors":"Yoon-Seo Kim,&nbsp;Hyeon Woo Kim,&nbsp;Taewon Hwang,&nbsp;Jinho Ahn,&nbsp;Sung Beom Cho,&nbsp;Jin-Seong Park","doi":"10.1002/aelm.202500137","DOIUrl":"10.1002/aelm.202500137","url":null,"abstract":"<p>Owing to the challenges of downsizing and reducing power consumption in the semiconductor industry, oxide semiconductors such as indium-gallium-zinc-oxide (IGZO) are emerging as notable alternative materials due to their compatibility with back-end-of-line processes and low leakage currents. However, enhancing electrical characteristics of oxide semiconductors to match silicon-based channels remains crucial. In this study, atomically-ordered (AO) IGZO is first synthesized using plasma-enhanced atomic layer deposition, resulting in a transistor with a field-effect mobility of 245 cm² Vs⁻¹ and excellent switching properties (threshold voltage = 0.17 V, subthreshold swing &lt;75 mV dec⁻¹) in a low thermal budget process (below 250 °C). Theoretical and experimental studies revealed that the ultra-high mobility originates from the carrier quantum confinement induced by the multi-quantum well structure of AO-IGZO. Our approach highlights the potential of oxide semiconductors to surpass limitations of silicon-based technology limitations, thereby paving the way for next-generation channel materials.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500137","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}