Advanced Electronic Materials最新文献_第8页

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel 利用反掺杂β - Ga2O3通道设计β - Ga2O3增强模式金属-氧化物-半导体异质结场效应晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-17 DOI: 10.1002/aelm.202400854

Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo

{"title":"Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel","authors":"Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo","doi":"10.1002/aelm.202400854","DOIUrl":"https://doi.org/10.1002/aelm.202400854","url":null,"abstract":"In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and the β‐Ga2O3 channel forms a depletion region, effectively blocking the channel in the normally‐off transistor. The fabricated β‐Ga2O3 MOS‐HJFET with a counter‐doped β‐Ga2O3 channel achieves a specific on‐resistance (Ron,sp) of 32.6 mΩ·cm2, threshold voltage (Vth) of 1.3 V, supporting a drain current of over 1 mA in the discrete device, and a high on/off current ratio of 108. Furthermore, guidelines for designing the enhancement‐mode MOS‐HJFET are proposed, considering the diffused length of p‐NiO and the thickness of the β‐Ga2O3 epitaxial layer.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"263 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium-Tin-Oxide Channels 基于超薄氧化铟锡通道的高线性对称性铁电人工神经形态器件

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-16 DOI: 10.1002/aelm.202500078

Siwei Wang, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, Lin Chen

{"title":"High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium-Tin-Oxide Channels","authors":"Siwei Wang, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, Lin Chen","doi":"10.1002/aelm.202500078","DOIUrl":"https://doi.org/10.1002/aelm.202500078","url":null,"abstract":"Because of the limitations of the von Neumann structure and transistor size scaling, it is important to find new materials to build ultra-thin artificial synapse devices. Doped In2O3 has attracted a lot of research due to its excellent on/off ratio, high mobility, and large on-state current. In this paper, an ultrathin Sn-doped In2O3 (ITO) is used as a semiconductor channel, and ferroelectric material HZO is used as a gate stack to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V. The device successfully simulates the characteristics of the human brain. Besides, a conductance modulation by ferroelectric polarization illustrates linear potentiation and depression characteristics. The devices achieve good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89. Based on the MNIST and sign language MNIST database, ITO FeFETs successfully recognize numbers and sign languages. This work demonstrates the potential of ITO in building high-performance artificial synaptic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143836940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature-Concentration Balance Method 通过拟议的温度-浓度平衡法实现用于辐射探测的高电阻率单晶 CsPbBr3 半导体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-16 DOI: 10.1002/aelm.202400972

Xuebao Zhang, Qingbo Wang, Ying Gao, Junying Zhang, Youpeng Wu, Peijie Ma, Lin Ma, Jianing Cai, Fenglei Niu, Qiang Zhao, Yunchao Tang, Junwei Bian, Chenming Liang, Chunxia Shen, Zeqian Wu, Fang Liu, Zhiling Hou, Jinxing Cheng

{"title":"High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature-Concentration Balance Method","authors":"Xuebao Zhang, Qingbo Wang, Ying Gao, Junying Zhang, Youpeng Wu, Peijie Ma, Lin Ma, Jianing Cai, Fenglei Niu, Qiang Zhao, Yunchao Tang, Junwei Bian, Chenming Liang, Chunxia Shen, Zeqian Wu, Fang Liu, Zhiling Hou, Jinxing Cheng","doi":"10.1002/aelm.202400972","DOIUrl":"https://doi.org/10.1002/aelm.202400972","url":null,"abstract":"Lead halide perovskites have shown high performance in radiation detection techniques owing to their excellent optoelectronic properties and stability. However, the high resistivity of the CsPbBr3 radiation detector is intensively dependent on the growth quality of the single crystal, which is closely related to temperature gradients or the introduction of additives. Herein, a CsPbBr3 single crystal with high radiation performance is grown based on the proposed temperature-concentration balance (TCB) method. The prepared perfect single crystal remains high quality in repeated experiments, which belongs to the Pnma space group, benefiting from the effective growth method. Based on the CsPbBr3 single crystal, the fabricated detector with the asymmetrical Au-In electrodes demonstrates outstanding linearity under reverse bias. It exhibits a lower dark current (2.66 × 10−2 nA) and high resistivity, which helps acquire a broader radiation measurement range. Moreover, the emission spectrum of the CsPbBr3 single crystals exhibits a sharp emission peak at 527 nm and narrower full width at half maximum, making crystals easily couple into radiation detectors. These findings provide insight into the growth and regulation of CsPbBr3 crystal for more extensive applications in radiation detection in the future.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143837204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector 用于高性能、偏振敏感、宽带红外探测器的Bi2O2Se/Ta2NiSe5隧道异质结

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-15 DOI: 10.1002/aelm.202500115

Fang Yang, Yuanfang Yu, Xinglei Zhang, Zhihao Qu, Zhaofu Chen, Shizheng Wang, Yinan Wang, Ting Zheng, Weiwei Zhao, Junpeng Lu, Hongwei Liu

{"title":"Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector","authors":"Fang Yang, Yuanfang Yu, Xinglei Zhang, Zhihao Qu, Zhaofu Chen, Shizheng Wang, Yinan Wang, Ting Zheng, Weiwei Zhao, Junpeng Lu, Hongwei Liu","doi":"10.1002/aelm.202500115","DOIUrl":"https://doi.org/10.1002/aelm.202500115","url":null,"abstract":"New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next-generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high-performance photodetector based on the Bi2O2Se/Ta2NiSe5 heterojunction, which simultaneously achieves high responsivity (>103 A W−1) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 1013 Jones at 633 nm and 1.8 × 1010 Jones at 1550 nm. Furthermore, high-resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next-generation photodetectors with comprehensive high performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Materials Selection Principles for Designing Electro-Thermal Neurons 设计电热神经元的材料选择原则

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-15 DOI: 10.1002/aelm.202400938

Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown

{"title":"Materials Selection Principles for Designing Electro-Thermal Neurons","authors":"Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown","doi":"10.1002/aelm.202400938","DOIUrl":"https://doi.org/10.1002/aelm.202400938","url":null,"abstract":"Artificial neurons exhibiting volatile threshold switching and action potential-like oscillations are crucial for brain-inspired computing. While Complimentary Metal-Oxide-Semiconductor (CMOS)-based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro-thermal devices due to nonlinearities like the Mott transition in VO2. Despite improved understanding of the physics, quantitative connections between neuronal performance and material properties remain under-explored, preventing predictive neuron design and rational materials selection. In this work, a physics-aware forward design methodology is developed for interrogating a wide palette of materials with properties varying by orders of magnitude, and their performance (high frequency, high dynamical reconfigurability and low power) under external circuit and device geometry constraints is assessed. The space of viable materials is identified to be much larger than previously recognized, with candidates from a range of materials classes, including Ge, GaP and MoS2. CMOS-compatible performance (such as 100 GHz oscillating frequencies) can be achieved with CMOS-compatible node sizes (≈10 nm). Finally, combinations of material properties yielding desired neuronal performance under uncertain design constraints are considered. This work solidifies forward design principles for electro-thermal neuron devices, a necessary pre-condition for inverse design from desired neuronal performance to required materials properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"108 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films 电化学掺杂用于P（NDI2OD-T2）薄膜的吸收和电导率调谐

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-15 DOI: 10.1002/aelm.202400956

David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs

{"title":"Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films","authors":"David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs","doi":"10.1002/aelm.202400956","DOIUrl":"https://doi.org/10.1002/aelm.202400956","url":null,"abstract":"Electrochemical doping of thin films of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) is shown as straightforward method to achieve different degrees of doping both during in situ electrochemical experiments as well as in the solid state. Results obtained from cyclic voltammetry and absorption spectroscopy upon reduction can be explained by the presence of the neutral state as well as polaron and bipolaron species, including neutral/polaron and polaron/bipolaron mixed valence states. The UV-vis-NIR spectra are analyzed and explained based on the calculated electronic structure and the corresponding transitions between different states, this includes features such as numbers and positions of the peaks and their evolution during reduction. Most intruingly, doped films are stable after transfer in the solid state, as evidenced by absorption spectroscopy. Conductivity measurements of films with different degrees of doping show a bell-shaped conductivity profile, which underlines the classification of P(NDI2OD-T2) as a conjugated redox polymer with mixed valence transport. Maximum conductivities of up to 2 × 10−4 S cm−1 are obtained at intermediate doping levels under the coexistence of neutral state and polarons. Conductivity measurements of blade-coated films point to anisotropic charge transport with the highest charge transport along the blade /polymer chain direction and an anisotropic conductivity ratio of 4.1.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

BiSbF2 Monolayer: A 2D Inversion-Asymmetric Topological Insulator With Linearly Tunable Giant Spin-Splitting and Bulk Gap 具有线性可调巨自旋分裂和体隙的二维逆不对称拓扑绝缘体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-14 DOI: 10.1002/aelm.202400996

Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu

{"title":"BiSbF2 Monolayer: A 2D Inversion-Asymmetric Topological Insulator With Linearly Tunable Giant Spin-Splitting and Bulk Gap","authors":"Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu","doi":"10.1002/aelm.202400996","DOIUrl":"https://doi.org/10.1002/aelm.202400996","url":null,"abstract":"Using first-principles calculations, an intriguing 2D topological insulator (TI), fluorinated β-BiSb monolayer (BiSbF2 ML) is identified, which not only harbors topologically protected gapless edge states, but also contains spin-split bulk states with opposite Berry curvature and spin moment in inequivalent valleys. Specifically, its topological edge states reside in a sizable bulk gap of up to 252 meV, sufficiently large for realizing room-temperature quantum spin Hall effect. For its bulk states, there exist giant spin-orbit induced spin-splittings in both the uppermost valence band (390 meV) and the lowermost conduction band (478 meV) due to the breaking of inversion symmetry. In particular, both of the spin-splitting and the bulk gap can be linearly tuned by external strains from −5% to 5% in a considerable energy window of about 100 meV. Moreover, the intrinsic electronic structure of BiSbF2 ML near the Fermi level can be well preserved in the substrate-supported BiSbF2 ML. The results establish a new 2D inversion asymmetric TI with distinguished bulk state, which provides an ideal platform for exploring the combined effects among spintronics, valleytronics, and topological physics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exotic Photothermal Response in Ti-Based MXene Optoelectronic Devices ti基MXene光电器件的奇异光热响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-14 DOI: 10.1002/aelm.202500017

Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi

{"title":"Exotic Photothermal Response in Ti-Based MXene Optoelectronic Devices","authors":"Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi","doi":"10.1002/aelm.202500017","DOIUrl":"https://doi.org/10.1002/aelm.202500017","url":null,"abstract":"MXenes represent one-of-a-kind materials to devise radically novel technologies and achieve breakthroughs in optoelectronics. To exploit their full potential, precise control over the influence of stoichiometry on optical and thermal properties, as well as device performance, must be achieved. Here, the characteristics of optoelectronic devices based on Ti3C2Tx and Ti2CTx thin films are uncovered, highlighting the striking difference in their photothermal responses to laser irradiation under different experimental conditions. Even though their absorption coefficients at 450 nm are comparable, the thermal excitation and relaxation phenomena display markedly different kinetics: Ti2CTx devices show a strong asymmetry during the heating-cooling cycle, with the heat dissipation kinetics being three orders of magnitude slower than Ti3C2Tx and strongly influenced by environmental conditions. The findings are expected to stimulate fundamental investigations into the photothermal response of MXenes and open exciting prospects for their use in printed and wearable optoelectronics, including memory devices and neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"299 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces 用于生物光子应用的共轭聚合物纳米粒子：生物杂交界面的制备、表征和模拟

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-10 DOI: 10.1002/aelm.202500073

Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca

{"title":"Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces","authors":"Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca","doi":"10.1002/aelm.202500073","DOIUrl":"https://doi.org/10.1002/aelm.202500073","url":null,"abstract":"Biophotonics has gained significant interest in recent years due to its potential in medical theranostic applications, with nano‐materials emerging as key enablers for advancing optical and electronic functionalities in biological environments. In this study, conjugated polymer nanoparticles (CP‐NPs), namely regio‐regular poly(3‐hexylthiophene) (P3HT), [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), and their blend (P3HT:PCBM), are exploited as nano‐materials for biophotonic applications. The CP‐NPs, obtained via a nanoprecipitation method, showed an average size of ca. 180 nm. Their optoelectrical properties indicate visible absorbance (350–600 nm) and red/near infra‐red (NIR, 650–900 nm) emission, demonstrating their suitability for biophotonic applications, in particular in biohybrid interfaces where effective light absorption and emission in biological environments are crucial. Interestingly, under light stimulation, the photocurrent response of the CP‐NPs in electrolyte solution (phosphate‐buffered saline, PBS) showed a stable and reproducible signal (current density ranging from 0.18 to 7 nA cm−2) thereby enhancing their potential for bio‐sensing/stimulation. Simulations of CP‐NPs interactions with biological fluids (i.e., PBS) under light stimulation showed distinct carrier generation and transport behaviors, with P3HT‐NPs exhibiting consistent charge generation (up to 3 × 1020 nA cm−3). These findings demonstrate that CP‐NPs are promising for biophotonic applications, such as photothermal therapy, due to their efficient charge transport, UV‐vis absorption, NIR emission, and controlled interactions with biological environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143813882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection 用于高灵敏度红外探测的自对准异质结栅极碳纳米管光电晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-09 DOI: 10.1002/aelm.202400966

Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang

{"title":"Self-Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection","authors":"Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang","doi":"10.1002/aelm.202400966","DOIUrl":"https://doi.org/10.1002/aelm.202400966","url":null,"abstract":"Heterojunction-gated (HG) phototransistors have shown exceptional performance in weak-light infrared detection due to their internal gain mechanism and the opto-electric decoupling design. However, huge room is remained on optimizing device structure to further improve the performance, integrated density and yield. In this work, a carbon nanotube (CNT) film-based phototransistor is fabricated with a self-aligned gate consisting of a zinc oxide (ZnO) film/PbS colloidal quantum dot heterojunction. This fabrication process involves a standard lift-off method to form an atomic-layer-deposited dielectric and a self-aligned sputtered ZnO film, which fully covers the CNT network channel to provide the maximum light absorption area. The resulting device demonstrates a high responsivity of 2.9 × 105 A W−1, a specific detectivity of 9.6 × 1013 Jones, and an ultraweak detectable intensity of 0.8 nW cm−2 at 1300 nm illumination, all at room temperature. The self-aligned HG phototransistor presents infrared photodetection performance comparable to non-self-aligned one, which typically require electron-beam lithography or high-precision lithography. This study can be insightful in developing high-performance, easily manufacturable CNT-based infrared detectors and high-resolution imaging applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"195 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0