Understanding the Relevance of Percolation on Charge Transport in Random ZnO Nanowire Networks

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze
{"title":"Understanding the Relevance of Percolation on Charge Transport in Random ZnO Nanowire Networks","authors":"Ridvan Ergun, Iddo Amit, Andrew J. Gallant, Del Atkinson, Dagou A. Zeze","doi":"10.1002/aelm.202500242","DOIUrl":null,"url":null,"abstract":"Understanding conductivity in nanowire networks and nanoelectronics remains challenging due to arbitrary morphologies and conduction hierarchies that are inherent to current modeling approaches. Here, an innovative percolation method utilizing a time‐efficient shortest‐path algorithm is introduced, effectively addressing the arbitrariness in nanowire networks to achieve more realistic conductivity modeling. By applying the percolation framework to arbitrary nanowire assemblies, universalized cluster parameters within the shortest paths are indentified, highlighting the most relevant conductive paths rather than exhaustively examining all nanowire connections. This approach is employed to analyze the two‐step conductivity behavior observed in random ZnO nanowire films. The results indicate that tunneling conduction is the primary mechanism below the percolation threshold, while percolative conductivity becomes dominant beyond this threshold. This model precisely calculates tunneling distances within universalized networks, offering accurate conductivity modeling based on nanowire spacing, which previous models have not fully captured. Furthermore, at low nanowire concentrations, charge transport is confined to a single lowest‐energy barrier path, as evidenced through both numerical and experimental methods. This comprehensive approach integrates theoretical models and experimental applications to enhance the practical use of random nanowire assemblies in real‐world applications. It also enables researchers with limited computational expertise to conduct realistic and accessible conductivity simulations across various nanostructured films and composite materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500242","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Understanding conductivity in nanowire networks and nanoelectronics remains challenging due to arbitrary morphologies and conduction hierarchies that are inherent to current modeling approaches. Here, an innovative percolation method utilizing a time‐efficient shortest‐path algorithm is introduced, effectively addressing the arbitrariness in nanowire networks to achieve more realistic conductivity modeling. By applying the percolation framework to arbitrary nanowire assemblies, universalized cluster parameters within the shortest paths are indentified, highlighting the most relevant conductive paths rather than exhaustively examining all nanowire connections. This approach is employed to analyze the two‐step conductivity behavior observed in random ZnO nanowire films. The results indicate that tunneling conduction is the primary mechanism below the percolation threshold, while percolative conductivity becomes dominant beyond this threshold. This model precisely calculates tunneling distances within universalized networks, offering accurate conductivity modeling based on nanowire spacing, which previous models have not fully captured. Furthermore, at low nanowire concentrations, charge transport is confined to a single lowest‐energy barrier path, as evidenced through both numerical and experimental methods. This comprehensive approach integrates theoretical models and experimental applications to enhance the practical use of random nanowire assemblies in real‐world applications. It also enables researchers with limited computational expertise to conduct realistic and accessible conductivity simulations across various nanostructured films and composite materials.
了解随机ZnO纳米线网络中渗透与电荷输运的关系
由于当前建模方法固有的任意形态和传导层次,理解纳米线网络和纳米电子学中的电导率仍然具有挑战性。本文介绍了一种利用时间效率最短路径算法的创新渗透方法,有效地解决了纳米线网络中的任意性,从而实现更真实的电导率建模。通过将渗透框架应用于任意纳米线组合,可以确定最短路径内的通用簇参数,突出显示最相关的导电路径,而不是详尽地检查所有纳米线连接。该方法用于分析随机ZnO纳米线薄膜的两步电导率行为。结果表明,在渗流阈值以下,隧道传导是主要机制,而在渗流阈值以上,渗透传导成为主导机制。该模型精确地计算了通用网络中的隧道距离,提供了基于纳米线间距的准确电导率模型,这是以前的模型无法完全捕获的。此外,通过数值和实验方法证明,在低纳米线浓度下,电荷输运仅限于单一的最低能势垒路径。这种综合的方法集成了理论模型和实验应用,以增强随机纳米线组件在现实世界中的实际应用。它还使具有有限计算专业知识的研究人员能够在各种纳米结构薄膜和复合材料中进行逼真且易于访问的电导率模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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