Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha
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Abstract

Due to their diverse potential in advanced electronics and energy technologies, electrically conducting metal-organic frameworks (MOFs) are drawing significant attention. Although hexagonal 2D MOFs generally display impressive electrical conductivity because of their dual in-plane (through bonds) and out-of-plane (through π-stacked ligands) charge transport pathways, notable differences between these two orthogonal conduction routes cause anisotropic conductivity and lower bulk conductivity. To address this issue, we have developed the first redox-complementary dual-ligand 2D MOF Cu3(HHTP)(HHTQ), featuring a π-donor hexahydroxytriphenylene (HHTP) ligand and a π-acceptor hexahydroxytricycloquinazoline (HHTQ) ligand located at alternate corners of the hexagons, which form either parallel HHTP and HHTQ stacks (AA stacking) or alternating HHTP/HHTQ stacks (AB stacking) along the c-axis. Regardless of the stacking pattern, Cu3(HHTP)(HHTQ) supports more effective out-of-plane conduction through either separate π-donor and π-acceptor stacks or alternating π-donor/acceptor stacks, while promoting in-plane conduction through the pushpull-like heteroleptic coordination network. As a result, Cu3(HHTP)(HHTQ) exhibits higher bulk conductivity (0.12 S/m at 295 K) than single-ligand MOFs Cu3(HHTP)2 (7.3 × 10−2 S/m) and Cu3(HHTQ)2 (5.9 × 10−4 S/m). This work introduces a new design approach to improve the bulk electrical conductivity of 2D MOFs by supporting charge transport in both in- and out-of-plane direcations.

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具有正交电荷传输途径的导电氧化还原互补双配体二维石墨MOF
由于其在先进电子和能源技术中的多种潜力,导电金属有机框架(mof)正引起人们的广泛关注。虽然六角形二维mof通常表现出令人印象深刻的导电性,因为它们具有双平面内(通过键)和平面外(通过π堆叠配体)电荷传输途径,但这两种正交传导途径之间的显着差异导致了各向异性电导率和较低的体积电导率。为了解决这一问题,我们开发了第一个氧化还原互补双配体2D MOF Cu3(HHTP)(HHTQ),其特征是π‐供体六羟基三苯(HHTP)配体和π‐受体六羟基三环喹唑啉(HHTQ)配体位于六边形的交替角,沿c轴形成平行的HHTP和HHTQ堆叠(AA堆叠)或交替的HHTP/HHTQ堆叠(AB堆叠)。无论堆叠模式如何,Cu3(HHTP)(htq)通过单独的π -供体和π -受体堆叠或交替的π -供体/受体堆叠支持更有效的平面外传导,同时通过类似推拉的异感配位网络促进平面内传导。结果表明,Cu3(HHTP)(htq)的体积电导率(295 K时为0.12 S/m)高于单配体mof Cu3(HHTP)2 (7.3 × 10−2 S/m)和Cu3(htq)2 (5.9 × 10−4 S/m)。这项工作引入了一种新的设计方法,通过支持平面内和平面外方向的电荷传输来提高二维mof的体导电性。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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