p‐Type β‐Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-08-19 DOI:10.1002/aelm.202500190

Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez‐Tomás, Ekaterine Chikoidze

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Abstract

This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β‐Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)‐ and (–201)‐oriented substrates. (010) β‐Ga2O3 samples exhibit mobility of up to 69.4 cm2 (V·s)−1 and stable hole concentrations ≈2.4 × 1017 cm−3 from 370 to 700 K. Structural and morphological studies, including XRD, AFM, and STEM, confirm high epitaxial quality, absence of extended defects and minimal strain. (–201) β‐Ga2O3 layer, which is simultaneously grown, exhibits typical p‐Ga2O3 behavior with observed deep level defects. The hole mobility ranging from 26 to 36 cm2 V−1·s−1 is measured between 420 and 700 K. Comparison of (010) and (–201) orientations reveals distinct anisotropic electrical properties. The findings emphasize the free motion of holes in β‐Ga2O3 and the critical role of crystallographic orientation.

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具有优异电输运性能的p‐Type β‐Ga2O3同外延薄膜

本研究报道了金属有机化学气相沉积（MOCVD）在（010）‐和（-201）‐取向基底上生长的β - Ga2O3同外延薄膜的高结构质量和优异的电输运性能。（010） β - Ga2O3样品表现出高达69.4 cm2 (V·s)−1的迁移率和稳定的空穴浓度≈2.4 × 1017 cm−3，从370到700 K。结构和形态研究，包括XRD， AFM和STEM，证实了高外延质量，没有扩展缺陷和最小应变。同时生长的(-201)β - Ga2O3层表现出典型的p - Ga2O3行为，并存在深层缺陷。在420 ~ 700 K范围内测得空穴迁移率为26 ~ 36 cm2 V−1·s−1。（010）和（-201）取向的比较显示出明显的各向异性电学性质。研究结果强调了β - Ga2O3中空穴的自由运动和晶体取向的关键作用。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.