Advanced Electronic Materials最新文献_第7页

Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects 植物电子纳米材料研究进展与展望

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202500080

Ciro Allará, Giuseppe Ciccone, Manuela Ciocca, Sahira Vasquez, Pietro Ibba, Mauro Maver, Tanja Mimmo, Paolo Lugli, Luisa Petti

{"title":"Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects","authors":"Ciro Allará, Giuseppe Ciccone, Manuela Ciocca, Sahira Vasquez, Pietro Ibba, Mauro Maver, Tanja Mimmo, Paolo Lugli, Luisa Petti","doi":"10.1002/aelm.202500080","DOIUrl":"https://doi.org/10.1002/aelm.202500080","url":null,"abstract":"Global food security faces increasing challenges due to population growth, climate change, and the loss of arable land. To meet the growing demand for food, innovative solutions are essential. Enhancing plant photosynthesis and stress tolerance represents a promising strategy to boost crop yields and reduce vulnerability to environmental stressors. Electronic nanomaterials have emerged as a transformative technology to address these issues. Their ability to encapsulate bioactive substances, green fertilizers, and nutrients, while controlling their release, offers significant advantages over traditional methods such as chemical fertilizers and conventional plant breeding. Electronic nanomaterials can enhance nutrient uptake, biomass production, photosynthetic efficiency, and resilience to biotic and abiotic stresses in a sustainable manner. This review explores the role of metals, metal oxides, metal-organic frameworks, and carbon-based nanomaterials in improving agricultural productivity. It also highlights microfluidics as a complementary technology for testing nanomaterials and optimizing key plant processes. Microfluidics can develop transport models, improve understanding of plant compartments, and minimize side effects. By integrating nanotechnology with advanced tools like microfluidics, agriculture can adopt sustainable practices to address food security challenges. This synergy fosters crop resilience and productivity, paving the way for innovative agricultural solutions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Density Flexible Neural Implants with Submicron Feedline Resolution 具有亚微米馈线分辨率的高密度柔性神经植入体

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-22 DOI: 10.1002/aelm.202500088

Lina Koschinski, Thomas Grap, Erkan Yilmaz, Marius Kleutgens, Simon Decke, Martin Kasavetov, Marie Jung, Alejandro Carnicer-Lombarte, George Malliaras, Andreas Offenhäusser, Viviana Rincón Montes

{"title":"High-Density Flexible Neural Implants with Submicron Feedline Resolution","authors":"Lina Koschinski, Thomas Grap, Erkan Yilmaz, Marius Kleutgens, Simon Decke, Martin Kasavetov, Marie Jung, Alejandro Carnicer-Lombarte, George Malliaras, Andreas Offenhäusser, Viviana Rincón Montes","doi":"10.1002/aelm.202500088","DOIUrl":"https://doi.org/10.1002/aelm.202500088","url":null,"abstract":"The development of high-density microelectrode arrays (MEAs) for large-scale brain recordings requires neural probes with reduced footprints to minimize tissue damage. One way to achieve this is by implementing dense electrode arrays with narrower feedline dimensions, though this increases susceptibility to capacitive coupling between electrical interconnects. To address this, this study explores the resolution limits for high-density flexible MEAs by optimizing the fabrication using optical contact lithography (OCL) and electron beam lithography (EBL). OCL enables metal feedlines with widths of 520 nm and interconnect spaces of 280 nm, while EBL allows the realization of 50 nm feedlines with 150 nm spaces on flexible parylene C substrates. Based on these techniques, we fabricate a flexible 64-channel intracortical implant with a miniaturized cross-section of only 50 × 6 or 70 × 6 µm<sup>2</sup>. In vivo validation in awake rats demonstrates that the fabricated, high-density flexible intracortical implants with submicron feedline resolution offer low-impedance electrodes and reduced crosstalk, enabling reliable neuronal recordings. These findings demonstrate the feasibility of miniaturizing flexible MEAs using a single-metal layer process, thereby reducing manufacturing complexity in high-density thin-film polymer-based neural interfaces.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Ga─Sb Bonds by GaSb Co-Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory 通过 GaSb 共掺杂 Ge2Sb2Te5 来增强 Ga─Sb 键，从而实现高速度和热稳定性相变存储器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-22 DOI: 10.1002/aelm.202500032

Ke Gao, Ruizhe Zhao, Xin Li, Jingwei Cai, Hao Tong, Xiangshui Miao

{"title":"Enhancing Ga─Sb Bonds by GaSb Co-Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory","authors":"Ke Gao, Ruizhe Zhao, Xin Li, Jingwei Cai, Hao Tong, Xiangshui Miao","doi":"10.1002/aelm.202500032","DOIUrl":"https://doi.org/10.1002/aelm.202500032","url":null,"abstract":"Chalcogenide phase change memory, a next-generation non-volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high-performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent contradiction between enhancing crystallization speed and bolstering amorphous stability. In this work, the formation of Ga─Ge bonds associated with Ga single doping are effectively addressed through the deliberate incorporation of GaSb co-doping. This strategic approach to bonding variety has significantly improved operational speed to a remarkable 8 ns, the crystallization temperature is elevated to 196 °C, and multilevel phase change performance is retained. First-principles calculations and material characterization is conducted to elucidate the underlying mechanisms responsible for the observed enhancements in both thermal stability and operation speed. This investigation provides valuable insights for optimizing the performance of phase change materials and addresses the pressing challenge of integrating phase change materials into a neuromorphic computing system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143857568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crack-Controlled Stretchable Gold Conductive Electrode through One-Step Carbon Nanotube Spray Deposition 一步喷镀碳纳米管制备裂纹控制可拉伸金导电电极

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202500033

Masashi Miyakawa, Hiroshi Tsuji, Mitsuru Nakata

引用次数: 0

Solvated PbI2 Clusters Preceding the Crystallization of Lead Halide Perovskites–a UV/VIS In Situ Study 卤化铅钙钛矿结晶前的溶剂化PbI2簇-紫外/可见原位研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202500060

Maximilian Spies, Simon Biberger, Fabian Eller, Eva M. Herzig, Anna Köhler

{"title":"Solvated PbI2 Clusters Preceding the Crystallization of Lead Halide Perovskites–a UV/VIS In Situ Study","authors":"Maximilian Spies, Simon Biberger, Fabian Eller, Eva M. Herzig, Anna Köhler","doi":"10.1002/aelm.202500060","DOIUrl":"https://doi.org/10.1002/aelm.202500060","url":null,"abstract":"The solution‐based fabrication of reproducible, high‐quality lead iodide perovskite films demands a detailed understanding of the crystallization dynamics, which is mainly determined by the perovskite precursor solution and its processing conditions. A systematic in situ study is conducted during the critical phase before the nucleation in solution to elucidate the formation dynamics of lead iodide perovskite films. Using ultraviolet (UV) absorption spectroscopy during spin coating allows to track the evolution of iodoplumbate complexes present in the precursor solution. It is found that prior to film formation, a novel absorption signature at 3.15 eV arises. This is attributed to the emergence of a PbI2‐DMF solvated (PDS) phase. The amount of PDS phase is closely connected to the concentration of the solution layer during spin coating. It is also proposed that PDS clusters are a predecessor of crystalline perovskite phases and act as nucleation seeds in the precursor solution. In this way, this work provides insights into the early stages of perovskite crystallization.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"108 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 通过铜嵌入双层MoS2实现超低接触电阻

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202500100

Huan Wang, Xiaojie Liu, Hui Wang, Yin Wang, Haitao Yin

引用次数: 0

Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks 自旋电子mem晶体管漏集成与脉冲神经网络发射神经元

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202500091

Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti

{"title":"Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks","authors":"Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti","doi":"10.1002/aelm.202500091","DOIUrl":"https://doi.org/10.1002/aelm.202500091","url":null,"abstract":"Spintronic devices based on DWss and skyrmions have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. Based on the ferromagnetic multilayer spintronic devices, a magnetic field-gated and current-controlled spintronic Leaky Integrate-and-Fire (LIF) neuron with memtransistor properties is showcased. The memtransistor property allows for tuning firing characteristics through external magnetic fields and current pulses. A LIF neuron model is developed based on measured characteristics to integrate the device into system-level Spiking Neural Networks (SNNs). The scalability of the neuron device is confirmed with the micromagnetic simulations in a domain-wall magnetic tunnel junction device. When integrated into SNN and convolutional SNN frameworks, the device achieves classification precision above 96%. The study highlights the device's potential as a neuron in hardware SNN architecture-based neuromorphic computing applications, combining memtransistor properties of the device and high pattern classification accuracy. The results demonstrate a promising path toward developing energy-efficient and scalable neural networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extremely High Electron Mobility in GeSn Epitaxial Films by Chemical Vapor Deposition 化学气相沉积在GeSn外延膜中的极高电子迁移率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202400925

Kai‐Ying Tien, Yen‐Yang Chen, Chia‐You Liu, Hsiang‐Shun Kao, Jiun‐Yun Li

{"title":"Extremely High Electron Mobility in GeSn Epitaxial Films by Chemical Vapor Deposition","authors":"Kai‐Ying Tien, Yen‐Yang Chen, Chia‐You Liu, Hsiang‐Shun Kao, Jiun‐Yun Li","doi":"10.1002/aelm.202400925","DOIUrl":"https://doi.org/10.1002/aelm.202400925","url":null,"abstract":"Direct‐bandgap germanium‐tin (GeSn) has attracted much interest for high‐performance optoelectronic and electronic device applications. However, the transition from indirect bandgap to direct bandgap in GeSn epitaxial films and the effects on the electron transport properties are not fully understood. In this work, the electron populations and transport properties are investigated in high‐quality n‐GeSn films epitaxially grown using chemical vapor deposition under different strain conditions. Hall measurements are performed to characterize the effective density and mobility in the n‐GeSn films at temperatures from 300 to 4 K. Very high electron mobilities up to 6,200 and 1,500 cm2V−1s−1 are achieved in the strain‐relaxed Ge0.88Sn0.12 film at 50 and 300 K, respectively, due to the increased electron population in the direct Γ‐valley. The band structures are also simulated using the empirical pseudopotential method (EPM) to calculate the electron density in n‐GeSn films. The simulation results support the experimental data and strongly suggest that applying more tensile stress on the GeSn films or increasing the Sn fraction in the strain‐relaxed GeSn films is critical to achieving direct‐bandgap characteristics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overcome Limited Efficiency in All‐Perovskite Tandem Solar Cells Upon Light Management at Top Perovskite‐ Transparent Electrode Interfaces 利用钙钛矿透明电极界面的光管理克服全钙钛矿串联太阳能电池的有限效率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-21 DOI: 10.1002/aelm.202500019

Jinfeng Li, Jinpeng Yang, Xianjie Liu

{"title":"Overcome Limited Efficiency in All‐Perovskite Tandem Solar Cells Upon Light Management at Top Perovskite‐ Transparent Electrode Interfaces","authors":"Jinfeng Li, Jinpeng Yang, Xianjie Liu","doi":"10.1002/aelm.202500019","DOIUrl":"https://doi.org/10.1002/aelm.202500019","url":null,"abstract":"Tandem solar cells have gained significant attention due to their rapid advancements in power conversion efficiency (PCE) and their potential to exceed the detailed balance limit of single‐junction solar cells. However, despite ongoing progress in perovskite‐silicon tandem solar cells, all‐perovskite tandem solar cells (APTSCs) still lag their perovskite‐silicon counterparts. This raises the question: can further development close this gap? Upon theoretical modeling combining optical and electrical calculations, we found that: i) the PCE limitations in APTSCs are primarily caused by the reflection losses at the top perovskite interface; ii) introducing random texturing at the surfaces of wide‐bandgap perovskites plays a critical role in enhancing light absorption, which can potentially improve PCE up to 30.97%. This improvement can be attributed to the reduced reflection and increased absorption at both the top wide‐bandgap and the bottom narrow‐bandgap perovskites. Furthermore, comparison between the calculated results and the experimental data clearly highlights the importance of light management strategies, particularly in improving the short‐circuit current density. This approach is more effective than relying solely on interfacial passivation and energy band alignment to enhance the open‐circuit voltage. The findings will provide valuable theoretical insights for optimizing and advancing the performance of APTSCs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"45 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel 利用反掺杂β - Ga2O3通道设计β - Ga2O3增强模式金属-氧化物-半导体异质结场效应晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-17 DOI: 10.1002/aelm.202400854

Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo

{"title":"Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel","authors":"Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo","doi":"10.1002/aelm.202400854","DOIUrl":"https://doi.org/10.1002/aelm.202400854","url":null,"abstract":"In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and the β‐Ga2O3 channel forms a depletion region, effectively blocking the channel in the normally‐off transistor. The fabricated β‐Ga2O3 MOS‐HJFET with a counter‐doped β‐Ga2O3 channel achieves a specific on‐resistance (Ron,sp) of 32.6 mΩ·cm2, threshold voltage (Vth) of 1.3 V, supporting a drain current of over 1 mA in the discrete device, and a high on/off current ratio of 108. Furthermore, guidelines for designing the enhancement‐mode MOS‐HJFET are proposed, considering the diffused length of p‐NiO and the thickness of the β‐Ga2O3 epitaxial layer.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"263 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0