Advanced Electronic Materials最新文献

{"title":"Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts","authors":"Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei","doi":"10.1002/aelm.202400782","DOIUrl":"https://doi.org/10.1002/aelm.202400782","url":null,"abstract":"Reconfigurable low‐dimensional devices are attractive for electronics in the post‐Moore era. However, their performance and function design are limited by the metal–semiconductor contacts for the Fermi level pinning and fixed Schottky barrier height (SBH). Here, semimetal carbon nanotube (sCNT) contacts are incorporated into a WSe<jats:sub>2</jats:sub> transistor to address these issues. The transistor exhibits excellent ambipolar transfer characteristics with on/off ratio exceeding 10<jats:sup>7</jats:sup> for both hole and electron conduction. Furthermore, the output characteristics are reconfigured among the four equivalent modes, P–P, P–N, N–P, and N–N, by applying appropriate gate voltage. The significant forward and backward rectifying behaviors at P‐N and N‐P modes are highly symmetrical and have high rectification ratios of over 10<jats:sup>6</jats:sup>. The improvements are attributed to specific semimetal contacts for the gate‐tunable SBH and the drain‐induced Schottky barrier lowering (DISBL) effect. Practical circuits include a reconfigurable filter circuit and a logic invertor have been further demonstrated successfully. The progress reveals that the semimetal contacts have great potential in future reconfigurable devices and circuits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ferroelectric Compensation Effect of the Hard Electrode for the HfO2-ZrO2 Superlattice Films at the Low-Annealing Temperature","authors":"Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao","doi":"10.1002/aelm.202400830","DOIUrl":"https://doi.org/10.1002/aelm.202400830","url":null,"abstract":"This study investigates the ferroelectric (FE) performance of [HfO₂/ZrO₂]₆ superlattice FE capacitors using different top electrodes (TE). The unidirectional rapid thermal annealing (RTA) process from 450 to 600 °C is conducted. The device's remanent polarization (<i>P_r</i>) improved with TE hardness, and is maintained with harder TE at lower temperature. Furthermore, the superlattice's endurance and the recovery feature improve with harder TE. The increased orthorhombic phase (o-phase) content and the decreased tetragonal phase (t-phase) content indicate that the hard TE's out-of-plane stress at the interface suppressed the phase transition from the t-phase to the monoclinic phase (m-phase) and promotes the o-phase formation. It's known that hard electrodes usually have low coefficient of thermal expansion (CTE), which can generate high in-plane tensile strain optimizing the FE properties, so the lower-CTE electrodes devices’ FE performances are expected to degrade more with temperature decreasing, which is opposite with the experimental results. Therefore, hard electrodes can generate high out-of-plane compressive stress to offset the reduced in-plane tensile stress, leading to a FE compensation effect in low temperature thermal process.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Combinatorial Optimization and Large‐Scale Integration of Organic, Low‐Energy, and Fully‐Printed Flexible Ribbon Photosensors","authors":"Georgios Bairaktaris, Yudai Hemmi, Ryota Kobayashi, Yuki Hommura, Eva Bestelink, Hiroyuki Matsui, Radu A. Sporea","doi":"10.1002/aelm.202400657","DOIUrl":"https://doi.org/10.1002/aelm.202400657","url":null,"abstract":"The development and optimization of flexible electronics has allowed technology to be better integrated in applications and environments where the physically rigid nature of electronics is previously a limiting factor. Printing techniques contribute to lowering the fabrication costs and making manufacturing‐on‐demand viable. The use of flexible electronics in the user interface domain has been previously explored with solution‐processed optical photodetectors created and the feasibility of using flexible sensors demonstrated in augmented paper applications. In this work, low‐cost photodetectors are developed using scalable printing techniques, their electrical performance is analyzed, and their stability over time is studied both in air and in vacuum, the structure is optimized through a combinatorial optimization experiment, and a scalable integration method is demonstrated for creating larger, addressable arrays of detectors. This is a demonstration of how printing methods allow for easy, cost‐effective, and low‐energy manufacturing of uniform and stable photosensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"132 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching","authors":"Nitin Kumar, Jong E. Han, Karsten Beckmann, Nathaniel Cady, G. Sambandamurthy","doi":"10.1002/aelm.202400877","DOIUrl":"https://doi.org/10.1002/aelm.202400877","url":null,"abstract":"Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next‐generation memory devices and neuromorphic computing systems. NbO<jats:sub>2</jats:sub>‐based memristors exhibit two regions of NDR at room temperature, making them promising candidates for such applications. Despite this potential, the physical mechanisms behind the onset and the ability to engineer these NDR regions remain unclear, hindering further development of these devices for applications. This study employed electrical transport and ultra‐low frequency noise spectroscopy measurements to investigate two distinct NDR phenomena in nanoscale thin films of NbO<jats:sub>2</jats:sub>. By analyzing the residual current fluctuations as a function of time, spatially inhomogeneous and non‐linear conduction are found near NDR‐1 and a two‐state switching near NDR‐2, leading to an insulator‐to‐metal (IMT) transition. The power spectral density of the residual fluctuations exhibits significantly elevated noise magnitudes around both NDR regions, providing insights into physical mechanisms and device size scaling for electronic applications. A simple theoretical model, based on the dimerization of correlated insulators, offers a comprehensive explanation of observed transport and noise behaviors near NDRs, affirming the presence of non‐linear conduction followed by an IMT connecting macroscopic device response to transport signatures at the atomic level.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic Field Screening of 2D Materials Revealed by Magnetic Force Microscopy (Adv. Electron. Mater. 2/2025)","authors":"Diego A. Aldave,&nbsp;Guillermo López-Polín,&nbsp;Esther Calle,&nbsp;Adrián Begué,&nbsp;Rocío Ranchal,&nbsp;Raúl Martínez,&nbsp;Cristina Bran,&nbsp;Enrique Burzurí,&nbsp;Julio Gómez-Herrero,&nbsp;Pablo Ares,&nbsp;Miriam Jaafar","doi":"10.1002/aelm.202570005","DOIUrl":"https://doi.org/10.1002/aelm.202570005","url":null,"abstract":"<p><b>Magnetic Field Screening</b></p><p>Two-dimensional (2D) materials have multiple remarkable properties. However, their ability to shield magnetic fields is not well known. In article number 2400607, using magnetic force microscopy, Guillermo López-Polín, Pablo Ares, Miriam Jaafar, ad co-workers find that graphene slightly weakens magnetic fields, while graphene oxide and MoS₂ have almost no effect, making them ideal for applications like data storage and spintronics.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 2","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature","authors":"Kewen Zhang, Yuhang Wu, Jingyan Song, Yitian Guo, Xiaolun Cai, Long Cheng, Dongxing Zheng, Aitian Chen, Peng Li, Xixiang Zhang","doi":"10.1002/aelm.202400820","DOIUrl":"https://doi.org/10.1002/aelm.202400820","url":null,"abstract":"Energy-efficient magnetization switching by current-induced spin-orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin-orbit coupling, topological insulators (TI) with spin-momentum locking are expected to be promising candidates for generating a significant spin-orbit torque compared to the heavy metal system. To achieve high charge-to-spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin-torque efficiency (β&lt;sub&gt;&lt;i&gt;L&lt;/i&gt;&lt;/sub&gt; = 12.9 × 10&lt;sup&gt;−6&lt;/sup&gt;mT A&lt;sup&gt;−1&lt;/sup&gt;cm&lt;sup&gt;2&lt;/sup&gt;) and spin Hall conductivity (&lt;span data-altimg=\"/cms/asset/21ef69f9-2c1a-4708-b342-17fccbd6db9a/aelm1120-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"13\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm1120-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow data-semantic-children=\"5,32\" data-semantic-content=\"6\" data-semantic- data-semantic-role=\"equality\" data-semantic-speech=\"sigma Subscript upper S upper H Baseline equals 4.8 times 10 Superscript 6 Baseline StartFraction italic h over two pi Over 2 e EndFraction normal upper Omega Superscript negative 1 Baseline normal m Superscript negative 1\" data-semantic-type=\"relseq\"&gt;&lt;mjx-msub data-semantic-children=\"0,4\" data-semantic- data-semantic-parent=\"33\" data-semantic-role=\"greekletter\" data-semantic-type=\"subscript\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"greekletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-script style=\"vertical-align: -0.15em;\"&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:simple;clearspeak:unit\" data-semantic-children=\"1,2\" data-semantic-content=\"3\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"implicit\" data-semantic-type=\"infixop\" size=\"s\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"4\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;/mjx-mrow&gt;&lt;/mjx-script&gt;&lt;/mjx-msub&gt;&lt;mjx-mo data-semantic- data-semantic-operator=\"relseq,=\" data-semantic-parent=\"33\" data-semantic-role=\"equality\" data-semantic-type=\"relation\" rspace=\"5\" space=\"5\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mrow data-semantic-children=\"7,31\" data-semantic-content=\"8\" data-semantic- data-semantic-parent=\"33\" data-semantic-role=\"unknow","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Review of Ga₂O₃ Heterojunctions for Deep-UV Photodetection: Current Progress, Methodologies, and Challenges","authors":"Alfred Moore, Saqib Rafique, Ciaran Llewelyn, Dan Lamb, Lijie Li","doi":"10.1002/aelm.202400898","DOIUrl":"https://doi.org/10.1002/aelm.202400898","url":null,"abstract":"In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limitations of Ga₂O₃ as a standalone material—most notably, its lack of p-type doping capability. One of the key application areas for Ga₂O₃ and its heterojunctions is ultraviolet (UV) photodetection, which has gained significant attention yet remains a relatively nascent field with vast potential for further exploration and optimization. This review provides a detailed overview of the current state-of-the-art in Ga₂O₃ technology, highlighting recent research advancements, key challenges, and emerging strategies aimed at overcoming these challenges. Specifically, it examines Ga₂O₃ heterojunctions for deep-UV photodetection, analysing compatible electrode materials and assessing various substrates suitable for Ga₂O₃ growth to enhance device performance. This comprehensive review is designed to serve as an essential resource for researchers and engineers working with Ga₂O₃-based heterojunctions, especially for applications in UV photodetection. Written with the needs of new entrants in mind, it aims to build a robust foundational understanding of Ga₂O₃ technology, supporting ongoing innovation and application expansion in this field.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase-Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025)","authors":"Prateek Kaul,&nbsp;Omar Concepción,&nbsp;Daan H. Wielens,&nbsp;Patrick Zellekens,&nbsp;Chuan Li,&nbsp;Zoran Ikonic,&nbsp;Koji Ishibashi,&nbsp;Qing-Tai Zhao,&nbsp;Alexander Brinkman,&nbsp;Detlev Grützmacher,&nbsp;Dan Buca","doi":"10.1002/aelm.202570004","DOIUrl":"https://doi.org/10.1002/aelm.202570004","url":null,"abstract":"<p><b>Phase-Coherent Transport</b></p><p>In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 2","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Getting Under the Sensor's Skin: The Importance of Electrical Contact Characterization for Conductive Composite Elastomers","authors":"Claire C. Onsager, Lev Rovinsky, Can C. Aygen, Shira K. Cohen, Noa Lachman, Matthew A. Grayson","doi":"10.1002/aelm.202400848","DOIUrl":"https://doi.org/10.1002/aelm.202400848","url":null,"abstract":"Conductive elastomer composites can be used as flexible, lightweight, and inexpensive sensors, but they require ohmic electrical contacts to ensure readout consistency, and such contacts can suffer from hysteresis, non-ohmic behavior, and cyclic fatigue. This work investigates a common cause of non-ohmic conduction in such composite contacts, namely the thin insulating layer native to the surface of most silicone rubber composites that have been infused with multi-walled carbon nanotubes for piezoresistive sensing. Voltage sweep dc measurements of individual contacts on this surface layer behave as parallel head-to-tail diodes with asymmetric hysteresis. Frequency sweep ac measurements quantify the insulator thickness with a leaky capacitor model to be ∼1 µm, independent of nanotube concentration, much thicker than the apparent layer thickness as imaged with scanning electron microscopy. This analysis also confirms highly anisotropic bulk conduction, circa 100 times higher in-plane than cross-plane. To remove the surface layer, a simple surface abrasion is shown to achieve deep ohmic electrical contact to the elastomer bulk. A three-terminal method for verifying ohmic contacts is demonstrated and works even when all contacts are non-ohmic. This three-terminal method be easily applied to other conductive polymers for contact quality-testing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"55 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Moisture Harvesting by the Structure Regulation of Hygroscopic Hydrogel for Energy and Water Sustainability","authors":"Yujie Du, Yongliang Zheng, Hong Liu, Shujing Zhao, Xiaomian Wang, Lin Yang","doi":"10.1002/aelm.202400802","DOIUrl":"https://doi.org/10.1002/aelm.202400802","url":null,"abstract":"Water and energy are the cornerstones of human development, with more than half of the world's population facing water scarcity issues. Atmospheric moisture is widely distributed around the globe, and the rational utilization of moisture can create tremendous value. Here, the sources of hygroscopic materials, methods of manufacturing hydrogels, properties of these hydrogels, and potential energy applications are concluded. To make the hydrogels with high hydrophilicity, ultrasonic oscillation, freeze drying, and spin coating can be used as the synthesis strategies. The main focus is on the characteristic parameters of hydrogels with water uptake, dehydration temperature, conductivity, mechanical stability, swelling behaviors, and heat transfer coefficient. These unique features will affect the performances of assembles, devices, and instruments. Subsequently, the potential applications of hydrogels are summarized, such as moisture harvesting and splitting with fuel production, dehumidification, thermal management in electronic devices, solar water evaporation, and electricity production. Finally, future directions and issues of interest are proposed to promote the diverse development of hydrogels and relational systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}