Advanced Electronic Materials最新文献_第7页

A Full Physical Strategy for Electrical Contacts on Laser‐Induced Graphene (LIG) Electrodes 激光诱导石墨烯（LIG）电极电接触的完整物理策略

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-15 DOI: 10.1002/aelm.70576

Davide Arcoraci, Simone Martellone, Michele Miceli, Davide Molino, Luigi Ribotta, Giulia Mossotti, Alessio Testa, Valentina Bertana, Luciano Scaltrito, Andrea Lamberti

{"title":"A Full Physical Strategy for Electrical Contacts on Laser‐Induced Graphene (LIG) Electrodes","authors":"Davide Arcoraci, Simone Martellone, Michele Miceli, Davide Molino, Luigi Ribotta, Giulia Mossotti, Alessio Testa, Valentina Bertana, Luciano Scaltrito, Andrea Lamberti","doi":"10.1002/aelm.70576","DOIUrl":"https://doi.org/10.1002/aelm.70576","url":null,"abstract":"Laser‐induced graphene (LIG) has emerged as a highly promising material for energy storage devices due to its excellent electrical conductivity, high specific surface area, and compatibility with flexible substrates. Despite these advantages, one of the main challenges in implementing LIG‐based electrodes is achieving a stable and efficient electrical connection with metallic current collectors without compromising the intrinsic properties of the material. In this study, we investigate a combination of physical approaches to establish a reliable and robust electrical bond between LIG and metal current collectors while avoiding chemical treatments, conductive adhesives, or binders. Electrode fabrication is performed using physical vapor deposition (PVD) and laser processing techniques, which provide precise control over both metallic layer deposition and LIG formation. These methods enable straightforward customization of electrode architectures for applications, including symmetric and hybrid energy storage devices. Furthermore, fast and selective laser treatments are adopted to enhance the mechanical integrity and long‐term stability of the electrode interfaces. Our results demonstrate a contact resistance as low as 1.3 Ω at the LIG‐gold interface without the use of binders or additional conductive agents. The proposed fabrication strategy improves electrical performance while simplifying the overall manufacturing process. By minimizing complex chemical procedures, it enables scalability.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Core and π‐Bridge Engineering to Deconstruct Y6‐Series into Modular Non‐Fused Acceptors: DFT‐Guided Structure‐Property Map for Organic Solar Cells 核心和π桥工程将Y6系列解构为模块化非熔接受体：有机太阳能电池的DFT引导结构-性质图

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-15 DOI: 10.1002/aelm.70572

Qurat ul Ain, Waqas Akram, Hasan Yaqoob, Munazza Shahid, Abdul Majid, Muhammad Altaf, Christian B. Nielsen, Raja Shahid Ashraf

{"title":"Core and π‐Bridge Engineering to Deconstruct Y6‐Series into Modular Non‐Fused Acceptors: DFT‐Guided Structure‐Property Map for Organic Solar Cells","authors":"Qurat ul Ain, Waqas Akram, Hasan Yaqoob, Munazza Shahid, Abdul Majid, Muhammad Altaf, Christian B. Nielsen, Raja Shahid Ashraf","doi":"10.1002/aelm.70572","DOIUrl":"https://doi.org/10.1002/aelm.70572","url":null,"abstract":"Non‐fullerene acceptors have propelled organic solar cells beyond 20% efficiency, yet the fused Y‐series backbones enabling high performance impose synthetic complexity and limited modularity. In this theoretical study, we propose a backbone deconstruction strategy, converting the BTP‐4Cl acceptor into an A‐π‐A′‐π‐A type non‐fused architecture to establish atomistic structure‐property relationships for core and bridge engineering. Six acceptors (Q1‐Q6) were designed by tuning the π‐bridge from thiophene to thienothiophene and the central BTD core to dithiophene‐based DT‐BTD, conjugation‐extended 4T‐BTD, and thiazole‐enriched TZT‐BTD. Density Functional Theory calculations show that the designed acceptors retain efficient Y‐class electronic structures and narrow energy gaps, yielding Scharber‐estimated V OC of 1.01–1.17 V against PM6 donor. Designed acceptors exhibited broad near‐IR absorption with λ max of 642–751 nm and achieved dominant charge‐transfer character, reaching 84% ICT excitations compared to 53% for BTP‐4Cl. Notably, the designs maintained tight solid‐state packing with significantly reduced reorganization energies (0.132–0.164 eV), achieving up to a four‐fold enhancement in electron mobility (9.43 × 10 − 1 cm 2 V − 1 s − 1 ) over the benchmark BTP‐4Cl. Interfacial calculations further indicated markedly strengthened PM6:acceptor electronic couplings for robust charge separation and low recombination losses. Overall, this study demonstrates that non‐fused engineering successfully preserves Y‐series optoelectronics while improving intrinsic electron transport and charge separation for efficient organic photovoltaics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"120 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AI‐Assisted Ultrasensitive Biosensing using Metal‐Electrolyte‐Metal‐Insulator‐Silicon Structure Based on Oxygen‐Tunable Iridium Oxide Nanonets for Lysyl‐Oxidase‐Like‐2 Breast Cancer Detection 基于氧可调氧化铱纳米网的金属-电解质-金属-绝缘体-硅结构的人工智能辅助超灵敏生物传感用于Lysyl -氧化酶- Like - 2乳腺癌检测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-15 DOI: 10.1002/aelm.70571

Chiao‐Fan Chiu, Pankaj Kumar, Long Nguyen Minh Le, Ping‐Hsuan Wu, Punnatorn Boonyoung, Shen Tingyang, Abhijit Aich, Yi‐Pin Chen, Shih‐Yin Huang, Siddheswar Maikap

{"title":"AI‐Assisted Ultrasensitive Biosensing using Metal‐Electrolyte‐Metal‐Insulator‐Silicon Structure Based on Oxygen‐Tunable Iridium Oxide Nanonets for Lysyl‐Oxidase‐Like‐2 Breast Cancer Detection","authors":"Chiao‐Fan Chiu, Pankaj Kumar, Long Nguyen Minh Le, Ping‐Hsuan Wu, Punnatorn Boonyoung, Shen Tingyang, Abhijit Aich, Yi‐Pin Chen, Shih‐Yin Huang, Siddheswar Maikap","doi":"10.1002/aelm.70571","DOIUrl":"https://doi.org/10.1002/aelm.70571","url":null,"abstract":"Early detection of breast cancer metastasis is critical for improving survival rates, yet identifying specific biomarkers such as Lysyl‐Oxidase‐Like‐2 (LOXL2) at low concentrations remains challenging. A highly sensitive, label‐free sensor utilizing a Metal‐Electrolyte‐Metal‐Insulator‐Silicon (MEMIS) configuration based on oxygen‐controlled iridium oxide (IrO x ) nano‐nets is reported for LOXL2 detection. By optimizing the reactive sputtering oxygen content (50%) and film thickness (2 nm), the IrOx nano‐net structure achieves a super‐Nernstian pH sensitivity of 150.4 mV/pH with minimal drift (1.95 mV/h). This exceptional sensitivity is attributed to high porosity and abundant redox‐active sites of the crystalline nano‐nets, which facilitate volumetric potential accumulation and significantly enhance the Limit of Detection (LoD) to 0.05 nM. To address subtle signal variations often obscured by noise, a dual‐branch 1D Convolutional Neural Network (1D‐CNN) was integrated to simulate and analyze sensor performance. The Artificial Intelligence (AI) model successfully identifies characteristic sub‐threshold voltage shifts associated with low‐abundance biomarkers, achieving diagnostic accuracy of 94.8%. This MEMIS‐AI platform serves as a promising bridge toward future ultrasensitive clinical screening.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrode-Engineered Dual-Mode Multifunctional Lead-Free Perovskite Optoelectronic Memristors for Neuromorphic Computing 用于神经形态计算的电极工程双模多功能无铅钙钛矿光电忆阻器

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-01-26 DOI: 10.1002/aelm.202500713

Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis

{"title":"Electrode-Engineered Dual-Mode Multifunctional Lead-Free Perovskite Optoelectronic Memristors for Neuromorphic Computing","authors":"Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis","doi":"10.1002/aelm.202500713","DOIUrl":"10.1002/aelm.202500713","url":null,"abstract":"Memristive devices based on halide perovskites hold strong promise to provide energy-efficient systems for the Internet of Things (IoT); however, lead (Pb) element should be minimized or ideally replaced. Herein, we introduce a multifunctional device based on AgBiI4 Pb-free perovskite as the active layer in a normal n-i-p solar cell configuration that exhibitss multiple mode-dependent neuromorphic functions. Specifically, through electrode engineering, we show a selection between volatile or non-volatile memristive switching when the Au top electrode is replaced by Ag. The volatile device having an Au top electrode can be used for emulating threshold-dependent artificial neuron firing processes, while the non-volatile device with Ag pads can emulate numerous synaptic protocols (LTP/LTD, PPF, STDP, SRDP, LTM, STM). Both volatile (VTH = −0.86 V) and non-volatile modes possess switching low voltages <1 V, while the ON/OFF ratio of the non-volatile system is 104 with a cycling endurance of 103 cycles and state retention of 103 s. Further investigation reveals that electrode type affects the conduction mechanism, as ion charge trapping and detrapping govern threshold switching with activation energy EA ≈ 0.7 eV, while the formation/rupture of Ag filaments is responsible for non-volatile switching. The response in both modes of devices can be tuned by light, while associative learning by emulating Pavlovian learning is demonstrated. Finally, experimental non-volatile data were used for MNIST and Fashion-MNIST classification, achieving 97.11% and 87.56% accuracy, respectively. Our work provides insights into electrode-engineered mode control in lead-free perovskite systems capable for a concurrent energy harvesting (PCE ∼1%) toward self-powered systems for neuromorphic edge computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500713","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146044873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

RRAM Variability Harvesting for CIM-Integrated TRNG CIM集成TRNG的RRAM变异性采集

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-01-27 DOI: 10.1002/aelm.202500635

Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana

引用次数: 0

Linear and Programmable Long-Term Plasticity in PECVD Amorphous SiC Memristors PECVD非晶SiC忆阻器的线性和可编程长期可塑性

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-07-28 DOI: 10.1002/aelm.70508

Qin Liu, Omesh Kapur, Bohao Ding, Fangnan Chen, Bingkai Ding, Ruomeng Huang, C. H. Kees de Groot

{"title":"Linear and Programmable Long-Term Plasticity in PECVD Amorphous SiC Memristors","authors":"Qin Liu, Omesh Kapur, Bohao Ding, Fangnan Chen, Bingkai Ding, Ruomeng Huang, C. H. Kees de Groot","doi":"10.1002/aelm.70508","DOIUrl":"10.1002/aelm.70508","url":null,"abstract":"Amorphous silicon carbide (SiC) is a promising dielectric platform for memristive artificial synapses due to its high stability and back-end-of-line compatibility for CMOS integration. Here, we demonstrate stoichiometric PECVD-grown amorphous SiC memristors with Cu active electrodes, in which synaptic functionality is engineered through control of material composition. By tuning the SiC stoichiometry from Si-rich to near-stoichiometric, the bonding configuration is modified to suppress excessive Cu ion migration, enabling gradual and stable conductance evolution. The resulting devices exhibit highly linear and programmable long-term potentiation and depression, with a low nonlinearity of 0.08, uniform conductance updates, and minimal cycle-to-cycle variation. The synaptic behavior is further shown to be controllable through pulse programming, enabling tunable multilevel conductance states. Using experimentally extracted device characteristics, we implement both artificial neural networks and convolutional neural networks to evaluate system-level performance. The memristor-based networks achieve classification accuracies exceeding 95% on MNIST and 90% on CIFAR-10, while maintaining robust performance under conductance discretisation and cycle-to-cycle variation. These results demonstrate a materials-driven approach to achieving linear and controllable synaptic behavior, establishing PECVD amorphous SiC as a strong candidate for high-precision and scalable neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148633895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermoelectric p-Type Iron-Based Ethylenetetrathiolate Coordination Polymers 热电p型铁基乙烯四硫酸盐配位聚合物

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-08-25 DOI: 10.1002/aelm.70547

Malar Auxilia Francis, Mari Heikkinen, Girish C. Tewari, Kristoffer Meinander, Johan Lindén, Maarit Karppinen

{"title":"Thermoelectric p-Type Iron-Based Ethylenetetrathiolate Coordination Polymers","authors":"Malar Auxilia Francis, Mari Heikkinen, Girish C. Tewari, Kristoffer Meinander, Johan Lindén, Maarit Karppinen","doi":"10.1002/aelm.70547","DOIUrl":"10.1002/aelm.70547","url":null,"abstract":"Here we demonstrate high room-temperature Seebeck coefficient of 95 µV K−1 in combination with ultralow thermal conductivity of 0.18 W m−1 K−1 for a novel bimetallic p-type semiconducting coordination polymer. We synthesize the (Fe, Cu) bimetallic coordination polymer together with the single-metal Cu and Fe counterparts using 1,3,4,6- tetrathiapentalene-2,5-dione (TPD) as the organic ligand. The resultant poly[metal-ethylenetetrathiolate] materials are characterized by XPS (X-ray photoelectron spectroscopy) and Mössbauer spectroscopy techniques for the copper and iron metal oxidation states and with PPMS (physical property measurement system) for electronic and thermal transport properties in the temperature range of 100–350 K. The heterobimetallic effect in poly[(Fe, Cu)-ETT] is best appreciated regarding the enhanced Seebeck coefficient. We foresee that the present p-type poly[(Fe, Cu)-ETT] thermoelectrics could be a promising counterpart for the previously more widely investigated n-type conducting polymers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70547","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses 基于皮焦耳编程脉冲的铁电Hafnia模拟权值更新规则

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-05-07 DOI: 10.1002/aelm.202500823

Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon-Lours

{"title":"Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses","authors":"Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon-Lours","doi":"10.1002/aelm.202500823","DOIUrl":"10.1002/aelm.202500823","url":null,"abstract":"In an effort to compete with the brain's efficiency at processing information, neuromorphic hardware combines artificial synapses and neurons using mixed-signal circuits and emerging memories. In ferroelectric resistive weights, the strength of the synaptic connection between two neurons is stored in the device conductance. During learning, programming pulses are applied to the synaptic weight, which reconfigures the ferroelectric domains and adjusts the conductance. One strategy to lower the energy cost during the training phase is to lower the duration of the programming pulses. However, the latter cannot be shorter than the self-loading time of the resistive weights, limited by intrinsic parasitics in the circuits. In this work, ferroelectric resistive weights are fabricated using a process compatible with CMOS Back-End-Of-Line integration, based on hafnia/zirconia nanolaminates. By laterally scaling the device area under 100 <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>μ</mi>\u0000 <mspace></mspace>\u0000 <mspace></mspace>\u0000 </mrow>\u0000 <annotation>$umu!!$</annotation>\u0000 </semantics></math> m2, the self-loading time becomes sufficiently short to enable 20 ns programming, which corresponds to a maximum of 3 picoJoules per pulse. Further, in this work, the weight update rule with 20 ns pulses is experimentally measured not only for different amplitudes but also for different initial conductance states. We find that the final weight is determined by the pulse amplitude, independent of the initial weight value.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500823","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148287497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing of Single-Interface Dzyaloshinskii-Moriya Interaction 单界面Dzyaloshinskii - Moriya相互作用的探测

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-08-17 DOI: 10.1002/aelm.70537

Ji-Sung Yu, Seong-Hyub Lee, Minhwan Kim, Dae-Yun Kim, Gunn-Hee Han, Wooyoung Shim, Jiho Shin, Yohan Mok, Jaehun Cho, Duck-Ho Kim, Sug-Bong Choe

{"title":"Probing of Single-Interface Dzyaloshinskii-Moriya Interaction","authors":"Ji-Sung Yu, Seong-Hyub Lee, Minhwan Kim, Dae-Yun Kim, Gunn-Hee Han, Wooyoung Shim, Jiho Shin, Yohan Mok, Jaehun Cho, Duck-Ho Kim, Sug-Bong Choe","doi":"10.1002/aelm.70537","DOIUrl":"10.1002/aelm.70537","url":null,"abstract":"The interfacial Dzyaloshinskii-Moriya interaction (DMI) is a fundamental antisymmetric exchange interaction that favors nonlinear spin orders and emerges prominently at interfaces in ultrathin magnetic films. The lack of single-interface resolution obscures both the magnitude and sign of the DMI at the interface of interest, and remains a challenge. Herein, we report the probing of a Pt/Co single-interface DMI under isolated interface conditions. Uncapped Co films on Pt were investigated in a vacuum using a magneto-optical Kerr microscope to observe the magnetic domains. The single-interface DMI is clearly revealed by the asymmetric domain-wall speed measurements. By resolving the Pt/Co single-interface DMI with systematic thickness control at a subatomic level, we confirm that subtle changes can be captured at the interface. This method offers a powerful tool for probing diverse interface-specific properties and is expected to advance the understanding of interface-driven physics with broad implications for chiral spin-orbitronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70537","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic Deep-Ultraviolet Signal Processing Using a-Ga2O3 基于a - ga2o3的神经形态深紫外信号处理

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-09-11 Epub Date: 2026-08-20 DOI: 10.1002/aelm.70542

Sidhant Sharma, Arthur Robert, Florian Wilke, Martin W. Allen, Valentina Baccetti, Jim G. Partridge, Hiep N. Tran

{"title":"Neuromorphic Deep-Ultraviolet Signal Processing Using a-Ga2O3","authors":"Sidhant Sharma, Arthur Robert, Florian Wilke, Martin W. Allen, Valentina Baccetti, Jim G. Partridge, Hiep N. Tran","doi":"10.1002/aelm.70542","DOIUrl":"10.1002/aelm.70542","url":null,"abstract":"Neuromorphic signal processing has been performed by lateral metal-semiconductor-metal photodetectors supported on wide-bandgap thin-film amorphous gallium oxide (a-Ga2O3). Paired pulse facilitation (PPF) observed in the photocurrents of the devices was attributed to charge trapping and de-trapping in the a-Ga2O3 and depended systematically on the amplitude, duration, and interval of the pulsed ultraviolet-C (UVC) input. Four-bit UVC binary pulse sequences of optimized power were input to the device, and these produced separable electrical output currents (conductance states), measured after the pulse sequences. A simple resistor-capacitor (RC) equivalent circuit model replicated the neuromorphic device responses, and this model was used with and incorporated into single- and multi-node reservoir computers. Classification of electrocardiograms (ECGs) was performed in simulations using an RC model whose parameters were extracted from and validated against measured device responses. The single-node reservoir with virtual nodes achieved limited accuracy in classification depending on the heartbeat type, while the composite multi-node reservoir (consisting of eight RC sub-reservoirs with different time constants) exhibited significantly improved classification capability, achieving an average accuracy of ∼95%. These results highlight the potential of the a-Ga2O3 detectors as artificial synapses for neuromorphic signal processing and temporal pattern recognition.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 17","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70542","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0