Advanced Electronic Materials最新文献

{"title":"Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors","authors":"Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii, Sergei V. Kalinin, Maksym V. Strikha","doi":"10.1002/aelm.202400495","DOIUrl":"https://doi.org/10.1002/aelm.202400495","url":null,"abstract":"Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP₂S₆ film—2D-MoS₂ single-layer—SiO₂ dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction to “Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source”","authors":"","doi":"10.1002/aelm.202400758","DOIUrl":"https://doi.org/10.1002/aelm.202400758","url":null,"abstract":"<p>D. Meng, S. Chen, C. Ren, J. Li, G. Lan, C. Li, Y. Liu, Y. Su, G. Yu, G. Chai, R. Xiong, W. Zhao, G. Yang, S. Liang, <i>Adv. Electron. Mater</i>. <b>2024</b>, <i>10</i>, 2300665.</p>\u0000<p>https://doi.org/10.1002/aelm.202300665</p>\u0000<p>The original expression for Equation (6):</p>\u0000<p><span data-altimg=\"/cms/asset/f4606e19-b131-44f2-a7db-3b134cc6f6e5/aelm983-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"2\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm983-math-0001.png\"><mjx-semantics><mjx-mrow data-semantic-children=\"2,64\" data-semantic-content=\"3\" data-semantic- data-semantic-role=\"equality\" data-semantic-speech=\"xi Subscript z Baseline equals StartFraction upper A Subscript upper D upper L Superscript z Baseline Over upper A Subscript upper F upper L Superscript y Baseline EndFraction StartFraction e mu 0 upper M Subscript normal s Baseline t Subscript s o u r c e Baseline t Subscript upper F upper M Baseline Over italic h over two pi EndFraction left bracket 1 plus left parenthesis upper M Subscript e f f Baseline divided by upper H Subscript r e s Baseline right parenthesis right bracket Superscript one half\" data-semantic-type=\"relseq\"><mjx-msub data-semantic-children=\"0,1\" data-semantic- data-semantic-parent=\"65\" data-semantic-role=\"greekletter\" data-semantic-type=\"subscript\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"greekletter\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\" size=\"s\"><mjx-c></mjx-c></mjx-mi></mjx-script></mjx-msub><mjx-mo data-semantic- data-semantic-operator=\"relseq,=\" data-semantic-parent=\"65\" data-semantic-role=\"equality\" data-semantic-type=\"relation\" rspace=\"5\" space=\"5\"><mjx-c></mjx-c></mjx-mo><mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"14,35,61\" data-semantic-content=\"62,63\" data-semantic- data-semantic-parent=\"65\" data-semantic-role=\"implicit\" data-semantic-type=\"infixop\"><mjx-mfrac data-semantic-children=\"8,13\" data-semantic- data-semantic-parent=\"64\" data-semantic-role=\"division\" data-semantic-type=\"fraction\"><mjx-frac><mjx-num><mjx-nstrut></mjx-nstrut><mjx-msubsup data-semantic-children=\"4,5,6\" data-semantic-collapsed=\"(8 (7 4 5) 6)\" data-semantic- data-semantic-parent=\"14\" data-semantic-role=\"latinletter\" data-semantic-type=\"subsup\" size=\"s\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"8\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.308em; margin-left: 0px;","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene Field-Effect Transistors toward Study of Cardiac Ischemia at Early Stage","authors":"Hanna Hlukhova, Dmitry Kireev, Andreas Offenhäusser, Denys Pustovyi, Svetlana Vitusevich","doi":"10.1002/aelm.202400332","DOIUrl":"https://doi.org/10.1002/aelm.202400332","url":null,"abstract":"Ischemia and reperfusion states are studied in a network of cardiomyocytes as a part of real-state conditions of heart injuries and inflammations, specifically myocardial infractions. Arrays of graphene field-effect transistors (GFETs) fabricated in this work are used for extracellular recordings of ischemia states of cardiac cells during the external triggering of the ischemia infarction. The low-concentrated ischemic buffer solution allows to create a cell-stress condition resulting in the reperfusion process. The results show that the action potentials recorded with the graphene transistors, especially their shape, and duration of the active segment in measured extracellular action potentials, can be used to characterize the real state of the studied cardiac cell culture. The unique property of GFETs to detect such small changes in the action potential of cells in cardiac healthy and unhealthy states provides prospects for building the next generation of ultrasensitive biosensors, enabling the detection of acute ischemic states at an early stage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga2O3 Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices","authors":"Ta-Shun Chou, Thi Thuy Vi Tran, Hartwin Peelaers, Kornelius Tetzner, Oliver Hilt, Jana Rehm, Saud Bin Anooz, Andreas Fiedler, Zbigniew Galazka, Martin Albrecht, Andreas Popp","doi":"10.1002/aelm.202400342","DOIUrl":"https://doi.org/10.1002/aelm.202400342","url":null,"abstract":"In this work, the out-diffusion and uphill-diffusion of Mg inside (100) β-Ga₂O₃ epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out-diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional-interstitial-diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non-annealed epitaxial β-Ga₂O₃ wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi-insulating substrate, leading to compensation of residual dopants (donors) in that region.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"37 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photo-synaptic Memristor Devices from Solution-processed Ga2O3 Thin Films","authors":"Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang","doi":"10.1002/aelm.202400512","DOIUrl":"https://doi.org/10.1002/aelm.202400512","url":null,"abstract":"Hardware integration with biological synaptic function is the key to realizing brain-like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic function. In this work, Ga₂O₃ film as a functional layer of RRAM is prepared by the solution method, and an RRAM-based photo-synaptic device with an Ag/Ga₂O₃/Si structure is constructed subsequently. The device exhibits excellent bipolar resistive switching characteristics, with the merits of a large storage window and long retention time. Furthermore, the devices generated excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) behaviors under light pulse stimulation, enabling the simulation of synaptic plasticity. The transformation of synaptic behavior from short-term memory (STM) to long-term memory (LTM) is achieved by observing the spike-duration dependent plasticity (SDDP), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP) and spike-rate dependent plasticity (SRDP) characteristics of photonic synapses under different conditions. The device also simulates the process of successive “learning-forgotten-remembering”, revealing that RRAM-based photonic synapses have great potential in the fields of artificial visual perception and memory storage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comprehensive Guide to Fully Inkjet-Printed IGZO Transistors","authors":"Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann","doi":"10.1002/aelm.202400478","DOIUrl":"https://doi.org/10.1002/aelm.202400478","url":null,"abstract":"In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scalable Metal–Organic Chemical Vapor Deposition of High Quality PtSe2","authors":"Maximilian Prechtl, Stefan Heiserer, Marc Busch, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Kuanysh Zhussupbekov, Kangho Lee, Ainur Zhussupbekova, Samuel Berman, Igor V. Shvets, Georg S. Duesberg","doi":"10.1002/aelm.202400392","DOIUrl":"https://doi.org/10.1002/aelm.202400392","url":null,"abstract":"Platinum diselenide (PtSe₂), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large-scale and reliable high-quality PtSe₂. In this study, the growth of PtSe₂ is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X-ray photoelectron, and X-ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe₂. Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic-scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe₂ layers with controllable thickness, offering a key requirement for the implementation of PtSe₂ in future applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications","authors":"Oliwia Gołyga, Grzegorz Muziol, Anna Feduniewicz-Żmuda, Marcin Siekacz, Henryk Turski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Emilia Pruszyńska-Karbownik, Tomasz Fąs, Jan Suffczyński, Czesław Skierbiszewski, Marta Sawicka","doi":"10.1002/aelm.202400365","DOIUrl":"https://doi.org/10.1002/aelm.202400365","url":null,"abstract":"The integration of photonic elements with nitride optoelectronic structures allows control of emitted light properties, which is advantageous for achieving, e.g., a single wavelength lasing. Positioning of the photonic structures on the top surface of GaN-based devices is problematic, in particular, for deposition of a metal contact to p-type top layer. In this work, custom-shaped submicron air channels arranged periodically 150 nm below the sample surface, forming an air/GaN diffraction grating embedded within a volume of the structure is proposed and fabricated. The fabrication process includes selective area Si ion implantation, GaN regrowth using plasma-assisted molecular beam epitaxy, ultra-high-pressure annealing for efficient electrical activation of implanted Si without diffusion, and electrochemical etching for the removal of selectively doped material. Embedded air/GaN diffraction gratings with periodicity of 460 and 631 nm are shown. Width of air channels ranges from 46 to 320 nm. Angle and polarization resolved reflectivity measurements combined with theoretical modeling confirm the designed optical performance of the embedded diffraction gratings in the GaN volume. The presented design and fabrication of custom-shaped, fully integrated photonic structures buried below the surface paves the way for novel type constructions of optoelectronic devices, such as compact distributed feedback laser diodes","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"233 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D Steep-Slope Tunnel Field-Effect Transistors Tuned by van der Waals Ferroelectrics","authors":"Xinrui Chen, Tiantian Jiang, Hanbin Wang, Yang Wang, Miao Zhang, Yi Cui, Yong Wang, Nannan Li, Xinchuan Du, Chaoyi Yan, Yuqing Liu, Xianfu Wang","doi":"10.1002/aelm.202400463","DOIUrl":"https://doi.org/10.1002/aelm.202400463","url":null,"abstract":"sPower consumption has emerged as a central concern in the realm of complementary metal-oxide-semiconductor (CMOS) technology. Silicon-based semiconductor devices have now approached the fundamental thermionic limit of the subthreshold swing (SS), which is 60 mV dec⁻¹, as defined by the Boltzmann tyranny. Tunnel field-effect transistors (TFETs) are considered promising low-power devices due to the band-to-band tunneling mechanism, which effectively avoids the thermionic limit. However, TFETs require the establishment of a staggered band alignment and currently lack effective techniques for adjusting the band offset. Here, by harnessing the robust ferroelectric field inherent to 2D CuInP₂S₆ (CIPS), a 2D WSe₂/MoS₂ heterojunction as well as a WSe₂ homojunction TFET controlled by ferroelectric gate are presented. The newly developed TFET achieves an ultra-low SS of 14.2 mV dec⁻¹ at room temperature, an on/off current ratio exceeding 10⁸, and a minimal hysteresis window below 10 mV. Additionally, the device demonstrates gate tunable negative differential resistance (NDR) characteristics with a very large peak-to-valley current ratio (PVCR) of 10.56 at room temperature. These findings underscore the significant promise of 2D ferroelectric tuning heterojunction and homojunction for future low-power electronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"124 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142448644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Tunable Transparent Graphene Absorber with Multifrequency Resonance","authors":"Chen Chen, Guang Cui, Jiawei Yang, Feng Zhang, Huihui Wang, Baolu Guan","doi":"10.1002/aelm.202400372","DOIUrl":"https://doi.org/10.1002/aelm.202400372","url":null,"abstract":"The demand for multinarrowband absorber has attracted increasing interest among researchers in recent years. However, integrating multifrequency absorption, tunability, and high optical transparency into an absorber remains a crucial challenge. In this study, a multiband, tunable, and transparent microwave meta-absorber is theoretically proposed and experimentally demonstrated. This meta-absorber is composed of resonant patterns made from graphene and indium tin oxide (ITO), placed on a substrate of lithium niobate (LN). By introducing P-type doping to reduce the resistance of monolayer graphene to around 300 Ω, the impedance matching of the absorber is promoted, consequently manifesting ten absorption points within 40 GHz. The electric field distribution analysis and an equivalent circuit model are employed to elucidate the physical mechanisms of the multiband absorber. Additionally, the lithium niobate dielectric layer possesses a substantial dielectric constant and exhibits phase transition characteristics with temperature changes. When the temperature increases to 250 °C, a comprehensive tuning range of more than 5.49 GHz within 40 GHz range is realized. The maximum tuning range for a single frequency point is 1.33 GHz. With the broadening of the band, the meta-absorber can provide multiple tunable ranges, making it more favorable for practical applications in optical modulator and sensor.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142448640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}