Advanced Electronic Materials最新文献

{"title":"Celebrating a Decade of Excellence and Innovation at Advanced Electronic Materials","authors":"","doi":"10.1002/aelm.202400958","DOIUrl":"10.1002/aelm.202400958","url":null,"abstract":"<p>As we mark the 10th anniversary of Advanced Electronic Materials, it is an ideal moment to pause and reflect on the incredible journey that has shaped this journal into a leading platform for innovation and cutting-edge research in the field of electronic materials. From its humble beginnings in 2015 to its current position as one of the most respected journals in the field, the past decade has been one of extraordinary growth, collaboration, and scientific advancement. In particular, as a platform for publishing significant studies on the design, fabrication, and application of electronic materials in emerging technologies, the journal serves a broad geographical authorship covering a wide spectrum of topics.</p><p></p><p>When Advanced Electronic Materials was launched ten years ago, the landscape of materials science, especially electronic materials, was rapidly evolving. The innovations in semiconductors, neuromorphic architecture, magnetic materials, flexible electronics, topological and superconducting compounds, and other critical technologies have revolutionized the fields of computing and software development, as well as the fields of bioelectronics and biomedical engineering. Our goal for the journal was clear: to provide a premier platform where the most impactful and pioneering research on advanced materials for applications in electronics could be published and disseminated to drive the next wave of technological advancement.</p><p>As we reflect on the journal's journey, it is evident that we have surpassed our initial goals. Launched by a team of qualified and professional editors, along with a well-trusted academic advisory editorial board, the journal Advanced Electronic Materials has been there every step of the way, publishing interdisciplinary research, from collaborative works bridging physics, chemistry, and engineering, to studies examining real-world applications.</p><p>More closely, the most cited articles in 10 years include a research article authored by Y. Gogotsi et al.<sup>[</sup><span><sup>1</sup></span><sup>]</sup> reporting the fabrication of Field Effect Transistors (FETs) based on monolayer Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> flakes exhibiting high field-effect electron mobility, a review article by J. Y. Tsao et al.<sup>[</sup><span><sup>2</sup></span><sup>]</sup> on ultrawide bandgap semiconductors and a review article by H. Shi et al.<sup>[</sup><span><sup>3</sup></span><sup>]</sup> summarizing approaches for improving the electrical conductivity of one of the most used conducting polymers:PEDOT:PSS (see all listed in <b>Table</b> 1).</p><p>We have also seen a marked increase in international collaborations, with authors and readers from around the globe contributing to enlightening the role of advanced materials in solving some of the world's most pressing technological challenges. These studies are often the result of cross-disciplinary teams that have worked together to push the boundaries of what is","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400958","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freestanding Membranes of Titania Nanorods, Photocatalytically Reduced Graphene Oxide, and Silk Fibroin: Tunable Properties and Electrostatic Actuation","authors":"Finn Dobschall, Hauke Hartmann, Sophia Caroline Bittinger, Norbert Schulz, Hendrik Schlicke, Hoc Khiem Trieu, Tobias Vossmeyer","doi":"10.1002/aelm.202400602","DOIUrl":"https://doi.org/10.1002/aelm.202400602","url":null,"abstract":"In this study, the mechanical properties of freestanding membranes made of graphene oxide (GO), titania nanorods (TNRs), and silk fibroin (SF) are investigated and their application is demonstrated as electrostatically driven actuators. Using a stamping process, the membranes are transferred onto substrates with circular apertures or square cavities measuring ∼80 to 245 µm in diameter or edge length, respectively. Afterwards, the membranes are exposed to deep-UV (DUV) radiation in order to photocatalytically convert GO to reduced graphene oxide (rGO). Microbulge tests combined with atomic force microscopy (AFM) measurements reveal enhanced mechanical stability after the DUV treatment, as indicated by an increase of Young's modulus from ∼22 to ∼35 GPa. The toughness of the DUV-treated membranes is up to ∼1.25 MJ m⁻³, while their ultimate biaxial tensile stress and strain are in the range of ∼377 MPa and ∼0.68%, respectively. Further, by applying voltages of up to ±40 V the membranes are electrostatically actuated and deflected by up to ∼1.7 µm, as determined via in situ AFM measurements. A simple electrostatic model is presented that describes the deflection of the membrane as a function of the applied voltage very well.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"98 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional Native Defects Boosting the Thermoelectric Transport in Few-Layer PdPS","authors":"Zehao Yu, Meilin Li, Yu Yang, Peng Yu, Ady Suwardi, Lifa Zhang, Yunshan Zhao","doi":"10.1002/aelm.202400634","DOIUrl":"https://doi.org/10.1002/aelm.202400634","url":null,"abstract":"As a unique Cairo pentagonal 2D material, palladium phosphide sulfide (PdPS) has garnered immense interests due to its excellent optoelectronic properties, anisotropic electronic transport behavior, and good air-stability. In addition, its puckered pentagon structure renders an ultralow thermal conductivity, making it a promising candidate for thermoelectrics applications. However, its thermoelectric transport has not been studied until now due to challenges in obtaining the atomic thin PdPS flake and further measurement. In this work, the thermoelectric performance of 2D PdPS is investigated. It is found that thermoelectric property of PdPS can be effectively manipulated via the delicate annealing treatment, which effectively regulate the defect concentrations. Remarkably, beyond regulating carrier concentrations and shifting the Fermi level closer to the conduction band, these defects also produce a large number of defect states. Consequently, ultra-high power factor of 0.648 mWm⁻¹K⁻² at room temperature is achieved, outperfoming other 2D materials reported to date. Furthermore, the anisotropic electronic transport properties of few-layer PdPS are further studied and an extremely high electron anisotropic ratio of 47.37 are obtained at 20 K. The findings provide a new pathway for the development of nanoelectronic devices based on emerging 2D materials with high electronic anisotropy and thermoelectric performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance n-type Organic Thermoelectric Aerogels Toward Flexible Energy Harvesting and Sensing Devices","authors":"Chan Zhang, Xi Liu, Shaobo Han, Menxing Wu, Runfeng Xiao, Shangzhi Chen, Guangming Chen","doi":"10.1002/aelm.202400824","DOIUrl":"https://doi.org/10.1002/aelm.202400824","url":null,"abstract":"Thermoelectric generators are one type of energy device widely used for wearable and flexible electronics to provide power to other devices. Organic aerogels with excellent thermoelectric and mechanical properties are promising candidates for such applications, but most of high-performance organic aerogels are made of p-type materials. It remains a great challenge to develop a low-cost and air-stable n-type organic aerogels with comparable performance with the state-of-the-art p-type counterparts to form an efficient thermoelectric power generator. In this study, a novel strategy based on a cellulose nanofiber skeleton is developed to form a high-performance n-type organic aerogel. The obtained n-type organic aerogels possess a Seebeck coefficient of −17 µV K⁻¹ and can combine with their p-type counterparts to form a generator outputting 1 µW with a temperature difference of 50 K. Using the n-type organic aerogels, dual-parameter pressure and temperature sensing with high precision and reproducibility can be realized. The n-type aerogel will find its applications not only for outdoor self-powered systems, but also for human health diagnosis systems with real-time monitoring of multiple parameters without crosstalk.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Progresses and Frontiers in Ultrawide Bandgap Semiconductors","authors":"Siddharth Rajan, Xiaohang Li","doi":"10.1002/aelm.202400934","DOIUrl":"10.1002/aelm.202400934","url":null,"abstract":"<p>The field of ultra-wide bandgap (UWBG) semiconductors is experiencing a transformative era, driven by the relentless pursuit of materials and technologies that promise to revolutionize power electronics, optoelectronics, and beyond. This special issue brings together a collection of pioneering review and research articles that highlight the latest advancements and future directions in UWB semiconductor technology.</p><p>The articles compiled in this issue underscore the remarkable potential of UWBG semiconductors to address critical challenges in materials science and device engineering. From deep ultraviolet optoelectronics to high-temperature electronic applications, the research demonstrates the versatility and unprecedented performance characteristics of these advanced materials. The diversity of approaches represented here is also striking. Researchers have explored multiple material systems—including AlGaN, Ga2O3, and novel oxide semiconductors—each offering unique capabilities that extend the boundaries of traditional semiconductor technologies. The breadth of investigations ranges from fundamental material characterization to device engineering, reflecting the interdisciplinary nature of modern materials research.</p><p>In “Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals” (aelm.202300428), P. Seyidov and co-authors investigate the thermal stability of Schottky contacts (Au, Pt, Ni) on β-Ga2O3 single crystals. The study reveals critical insights into defect levels and material behavior under thermal stress, identifying defect levels and discussing the rearrangement and dissociation of hydrogen in Ga-O divacancy complexes. These findings are essential for understanding the reliability and performance of β-Ga2O3-based devices under high-temperature conditions.</p><p>In “Discovery of a Robust p-type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8” (aelm.202300550), H. Zhao and co-authors introduce a novel p-type UWBG oxide semiconductor with a bandgap of ≈5.36 eV. Utilizing mist-chemical vapor deposition (M-CVD), the study demonstrates robust p-type conductivity with a wide range of hole concentrations. This discovery opens new avenues for creating efficient and robust electronic and optoelectronic devices.</p><p>In “Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices” (aelm.202300662), Y. Zhang and co-authors explore the modulation of acceptor concentration (NA) in NiO by controlling the oxygen partial pressure during magnetron sputtering. The study reveals a tunable acceptor concentration, with practical breakdown fields (EB) ranging from 3.8 to 6.3 MV cm⁻<sup>1</sup>. These findings highlight the potential of NiO as a p-type material for power devices, enabling performance beyond conventional limits.</p><p>In “Material Properties of n-type β-Ga2O3 Epilayers with In-Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition” (aelm.202300679),","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400934","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CMOS-Compatible HfOx-Based Radiation Hardening Component for Neuromorphic Computing Applications","authors":"Yao-Feng Chang, Yifu Huang, Chin-Han Chung, Ying-Chen Chen","doi":"10.1002/aelm.202400823","DOIUrl":"https://doi.org/10.1002/aelm.202400823","url":null,"abstract":"HfOx-based resistive random-access-memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS-compatible materials (ruthenium (Ru)) and lithography-lite process, potentially enabling a maskless, etching-free process that can be implemented in the low earth orbit (LEO), the International Space Station (ISS), and commercial LEO destinations (CLDs). The devices met the requirements for qualified manufacturers list verification (QMLV) and radiation hardness assurance (QMLV-RHA), as well as Advanced Next Generation Strategic Radiation, hardened Memory (ANGSTRM), which potentially support LEO, medium earth orbit, and geosynchronous orbit missions. Specifically, after a 5-Mrad total ionizing dose (TID) test, the electrical characterized results showed non-degradation performance, memory window ≈40 with operation power < mW, capability of > 000-times endurance and 15-year retention. The Ruthenium oxide (RuOx) can serve as a photon-absorb sink to reduce the switching layer damage caused by heating induced by radiation, supported by Particle and Heavy Ion Transport Code System Monte Carlo simulation. Furthermore, the neural network by HfOx/RuOx-based ReRAM device is trained with the inference accuracy at various TIDs for a potential neuromorphic hardware system demonstration. The results show that HfOx/RuOx-based ReRAM neuromorphic computing is quite robust as a radiation-hardened structure, providing a development path to realize programmable computing chip tolerance under irradiation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142911871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β-Ga2O3 Solar-Blind Photodetectors","authors":"Nathan Wriedt,&nbsp;Lingyu Meng,&nbsp;Dong Su Yu,&nbsp;Chris Chae,&nbsp;Kyle Liddy,&nbsp;Ashok Dheenan,&nbsp;Sushovan Dhara,&nbsp;Roberto C. Myers,&nbsp;Oleg Maksimov,&nbsp;Richard Blakeley,&nbsp;Sanjay Krishna,&nbsp;Jinwoo Hwang,&nbsp;Hongping Zhao,&nbsp;Joe McGlone,&nbsp;Siddharth Rajan","doi":"10.1002/aelm.202400552","DOIUrl":"10.1002/aelm.202400552","url":null,"abstract":"<p>The fabrication and characterization of metal/BaTiO₃/β-Ga₂O₃ solar-blind photodetectors are reported. β-Ga₂O₃ is a promising material for solar-blind photodetectors due to its large bandgap and the availability of low defect-density melt-grown substrates. In this work, structures are introduced that employ high-permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high-k dielectric BaTiO₃ reduces the dark current by ≈10⁴, all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 10³ compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self-trapped holes in Ga₂O₃ to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β-Ga₂O₃ photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO₃/Pt interface.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400552","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142908292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications","authors":"Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin","doi":"10.1002/aelm.202400734","DOIUrl":"https://doi.org/10.1002/aelm.202400734","url":null,"abstract":"Digital storage and analog storage shine in different fields mainly due to their strong stability and high information density, respectively, while the freely selective digital and analog resistance switching applications are a matter of great concern. Here, a multi-functional device integrated with analog and digital resistive switching behavior in a simple structure is reported, achieving functions of freely selective non-volatile digital storage, artificial synaptic behavior based on ferroelectric polarization-inducing analog resistive switching behavior, neural network computing, and reconfigurable logic functions. The non-volatile digital memory exhibits a low operating voltage (≈1—2 V) and high retention stability (&gt; 2000 s). The analog resistive switching behavior exhibits 128-level conductance and excellent artificial synaptic performance with a large dynamic range (≈196), high linearity (≈0.84), and low power consumption. The modulation effect of band bending, an often underappreciated yet crucial element, is considered to analyze the mechanisms behind the optimized device performance, further providing support and expansion for the multifunctional applications of In₂Se₃ devices. Reconfigurable logic functions and an artificial neural network (ANN) with outline learning accuracy (≈89%) for handwritten digit recognition are achieved. This design provides new insights into the analysis of 2D ferroelectric devices and holds great promise for simplified and multi-functional storage-computing devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"45 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142904848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Continuous and Extremely Flat Ag Electrode by Tailoring Surface Energy for Organic Light-Emitting Diodes","authors":"Won Seok Cho, Jae Yong Park, Seungo Gim, Wan Jae Dong, Soo Young Kim, Jong-Lam Lee","doi":"10.1002/aelm.202400281","DOIUrl":"https://doi.org/10.1002/aelm.202400281","url":null,"abstract":"The exploration of alternative transparent electrodes to indium tin oxide (ITO) in organic light-emitting diodes (OLEDs) has been a topic of interest. Among various candidates, ultrathin and continuous metal films have garnered significant interest for their ability to offer both transparency and conductivity. However, due to the higher surface energy of metals compared to substrates, metal films tend to grow in a discrete island shape, resulting in poor conductivity and even low transparency due to a localized surface plasmon by metal islands. In this work, a way to produce homogeneous ultrathin and continuous Ag film (UCAF) achieved through primary NF₃ plasma treatment on a glass substrate is proposed. This treatment introduces F bonds on the surface, enhancing the hydrophilicity of the glass surface and facilitating the formation of UCAF with high optical transmittance (&gt;70%) and low sheet resistance (&lt;10 Ω/ϒ). By incorporating UCAF into OLEDs as a bottom electrode, the current efficiency showed an 86% enhancement compared to an ITO bottom electrode at an operating current density of 10 mA cm⁻². Numerical simulation results elucidated superior light extraction efficiency in OLED with UCAF compared to that with ITO, attributed to both cavity effect and reduced waveguide mode at the organic/electrode interface.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142901812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring Dynamic Synaptic Plasticity in FeTFT Optoelectronic Synapse for Associative Learning","authors":"Peng Yang, Hui Xu, Xiaopeng Luo, Shihao Yu, Yang Liu, Yefan Zhang, Xu Guo, Bing Song, Zhiwei Li, Sen Liu, Qingjiang Li","doi":"10.1002/aelm.202400732","DOIUrl":"https://doi.org/10.1002/aelm.202400732","url":null,"abstract":"Neuromorphic hardware with dynamic synaptic plasticity presents fascinating applications in advanced artificial intelligence. However, the development of low-cost, CMOS (Complementary Metal-Oxide-Semiconductor)-compatible, and dynamically tunable synaptic devices is still nascent. Notably, the spontaneous polarization of hafnium oxide-based ferroelectric materials, combined with the persistent photoconductivity effect of indium-gallium-zinc-oxide (IGZO) semiconductors, provide a potential solution. In this paper, a novel optoelectronic synaptic device based on ferroelectric thin-film transistors (FeTFTs) is proposed to achieve dynamic synaptic plasticity through the co-modulation of light and electrical signals, which can effectively adjust the dynamic range of synaptic weights and emulate complex biological behaviors. The effective dynamic synaptic plasticity of FeTFTs is quantified under different light power intensities and verified through the emulation of complex biological behavior, such as classical conditioning experiments and environmental adaptive behavior. Furthermore, a 3 × 3 FeTFT array is constructed to demonstrate its potential applications in memory functions. This CMOS-compatible optoelectronic synaptic device with dynamic synaptic plasticity provides a robust hardware foundation for the future development of artificial intelligence, enabling it to adapt to more complex environments and perform tasks efficiently.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142901818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}