用于肖特基二极管和MESFET应用的EGaIn β - Ga2O3多用途接触工程

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Gyeong Seop Kim, Jin Hyuk Choi, Min‐gu Kim, Ji‐Hoon Kang, Young Tack Lee
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引用次数: 0

摘要

β -氧化镓(β - Ga2O3)已成为一种有前途的超宽带隙n型半导体,用于5G和人工智能技术领域的大面积电路集成和高功率器件应用。然而,β - Ga2O3在传统的金属化方法中存在欧姆接触形成的关键问题。在这项研究中,成功地展示了一种低温制造策略,欧姆接触电极,采用共晶镓铟(EGaIn)液态金属在β‐Ga2O3有源沟道材料上,用于肖特基二极管电路和金属半导体场效应晶体管(MESFET)。欧姆和整流触点的选择性丝网印刷可以实现对称和非对称器件架构的单片集成,包括源极/漏极、肖特基二极管和场效应管,而无需额外的热后退火和蚀刻工艺。β‐Ga2O3/Au肖特基二极管具有良好的整流特性,电流开/关比为10⁷,理想因子(η)为1.63,而MESFET器件的漏极电流开/关比为≈3.1 × 106。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications
Beta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology. However, β‐Ga2O3 has a critical problem in Ohmic contact formation using a traditional metallization method. In this study, a low‐temperature fabrication strategy is successfully demonstrated of an Ohmic contact electrode, employing eutectic gallium indium (EGaIn) liquid metal on β‐Ga2O3 active channel material for Schottky diode circuit and metal semiconductor field effect transistor (MESFET) applications. The selective screen‐printing of Ohmic and rectifying contacts enables monolithic integration of symmetric and asymmetric device architectures, including source/drain electrodes, Schottky diodes, and FETs without additional post‐thermal annealing and etching processes. The β‐Ga2O3/Au Schottky diodes exhibit good rectifying properties of a current on/off ratio of 10⁷ and an ideality factor (η) of 1.63, while the MESFET devices demonstrate a drain current on/off ratio of ≈3.1 × 106.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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