Gyeong Seop Kim, Jin Hyuk Choi, Min‐gu Kim, Ji‐Hoon Kang, Young Tack Lee
{"title":"用于肖特基二极管和MESFET应用的EGaIn β - Ga2O3多用途接触工程","authors":"Gyeong Seop Kim, Jin Hyuk Choi, Min‐gu Kim, Ji‐Hoon Kang, Young Tack Lee","doi":"10.1002/aelm.202500332","DOIUrl":null,"url":null,"abstract":"Beta gallium oxide (β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology. However, β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> has a critical problem in Ohmic contact formation using a traditional metallization method. In this study, a low‐temperature fabrication strategy is successfully demonstrated of an Ohmic contact electrode, employing eutectic gallium indium (EGaIn) liquid metal on β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> active channel material for Schottky diode circuit and metal semiconductor field effect transistor (MESFET) applications. The selective screen‐printing of Ohmic and rectifying contacts enables monolithic integration of symmetric and asymmetric device architectures, including source/drain electrodes, Schottky diodes, and FETs without additional post‐thermal annealing and etching processes. The β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Au Schottky diodes exhibit good rectifying properties of a current on/off ratio of 10⁷ and an ideality factor (η) of 1.63, while the MESFET devices demonstrate a drain current on/off ratio of ≈3.1 × 10<jats:sup>6</jats:sup>.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications\",\"authors\":\"Gyeong Seop Kim, Jin Hyuk Choi, Min‐gu Kim, Ji‐Hoon Kang, Young Tack Lee\",\"doi\":\"10.1002/aelm.202500332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Beta gallium oxide (β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology. However, β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> has a critical problem in Ohmic contact formation using a traditional metallization method. In this study, a low‐temperature fabrication strategy is successfully demonstrated of an Ohmic contact electrode, employing eutectic gallium indium (EGaIn) liquid metal on β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> active channel material for Schottky diode circuit and metal semiconductor field effect transistor (MESFET) applications. The selective screen‐printing of Ohmic and rectifying contacts enables monolithic integration of symmetric and asymmetric device architectures, including source/drain electrodes, Schottky diodes, and FETs without additional post‐thermal annealing and etching processes. The β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Au Schottky diodes exhibit good rectifying properties of a current on/off ratio of 10⁷ and an ideality factor (η) of 1.63, while the MESFET devices demonstrate a drain current on/off ratio of ≈3.1 × 10<jats:sup>6</jats:sup>.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"50 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500332\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500332","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications
Beta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology. However, β‐Ga2O3 has a critical problem in Ohmic contact formation using a traditional metallization method. In this study, a low‐temperature fabrication strategy is successfully demonstrated of an Ohmic contact electrode, employing eutectic gallium indium (EGaIn) liquid metal on β‐Ga2O3 active channel material for Schottky diode circuit and metal semiconductor field effect transistor (MESFET) applications. The selective screen‐printing of Ohmic and rectifying contacts enables monolithic integration of symmetric and asymmetric device architectures, including source/drain electrodes, Schottky diodes, and FETs without additional post‐thermal annealing and etching processes. The β‐Ga2O3/Au Schottky diodes exhibit good rectifying properties of a current on/off ratio of 10⁷ and an ideality factor (η) of 1.63, while the MESFET devices demonstrate a drain current on/off ratio of ≈3.1 × 106.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.