Analog ReLU Activation Enabled by Van Hove Singularities in a Kagome Semiconductor Field‐Effect Transistor

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ziyuan Meng, Hang Xu, Xueli Geng, Zhaoying Ren, Haifeng Feng, Kunrong Du, Zhijian Shi, Wei Cai, Zhe Sun, Hongrun Zhang, Anping Huang, Feng Cheng, Binghui Ge, Yi Du, Weichang Hao
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Abstract

With the growing demand for high‐performance computing in deep learning, energy‐efficient analog computing has emerged as a promising alternative to conventional energy‐intensive digital processing. A major obstacle in this field is the physical realization of activation functions, due to the lack of analog f (FETs) that inherently exhibit the desired piecewise‐linear transfer characteristics. Here, a novel strategy is presented for implementing the Rectified Linear Unit (ReLU) activation function by exploiting the high density of states (DOS) associated with van Hove singularities (vHs), induced by flat bands in a kagome semiconductor Nb3Cl8 FET. This vHs‐enhanced DOS imparts pronounced piecewise‐linear transfer behavior at low temperatures, effectively mimicking the ReLU function. To enable room‐temperature operation, the origin of the hysteresis commonly observed in Nb3Cl8 FETs is identified and addressed. Temperature‐dependent and time‐resolved measurements attribute the hysteresis to charge trapping at the Nb3Cl8–substrate interface. By introducing a hexagonal boron nitride (h‐BN) buffer layer, the hysteresis is successfully suppressed, achieving stable and highly linear transfer characteristics at room temperature. These results demonstrate the potential of vHs‐engineered electronic states for the physical implementation of analog activation functions, offering a pathway toward compact, high‐density, and energy‐efficient hardware for analog deep learning accelerators.
Kagome半导体场效应晶体管中的Van Hove奇点使能模拟ReLU激活
随着深度学习对高性能计算的需求不断增长,节能模拟计算已经成为传统能源密集型数字处理的一个有前途的替代方案。该领域的一个主要障碍是激活函数的物理实现,因为缺乏固有地表现出期望的分段线性传递特性的模拟f (fet)。本文提出了一种利用kagome半导体Nb3Cl8场效应管中平坦带诱导的与van Hove奇点(vHs)相关的高密度态(DOS)实现整流线性单元(ReLU)激活函数的新策略。这种vHs增强的DOS在低温下具有明显的分段线性传递行为,有效地模仿了ReLU函数。为了使室温工作,确定并解决了Nb3Cl8 fet中常见的磁滞的来源。温度相关和时间分辨测量将滞后归因于nb3cl8 -衬底界面的电荷捕获。通过引入六方氮化硼(h‐BN)缓冲层,成功抑制了磁滞,在室温下实现了稳定和高度线性的传输特性。这些结果证明了vHs工程电子态在模拟激活函数的物理实现方面的潜力,为模拟深度学习加速器的紧凑、高密度和节能硬件提供了一条途径。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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