Advanced Electronic Materials最新文献_第6页

In2Se3 Synthesized by the FWF Method for Neuromorphic Computing 采用 FWF 方法合成的 In2Se3 可用于神经形态计算

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-02 DOI: 10.1002/aelm.202400603

Jaeho Shin, Jingon Jang, Chi Hun Choi, Jaegyu Kim, Lucas Eddy, Phelecia Scotland, Lane W. Martin, Yimo Han, James M. Tour

{"title":"In2Se3 Synthesized by the FWF Method for Neuromorphic Computing","authors":"Jaeho Shin, Jingon Jang, Chi Hun Choi, Jaegyu Kim, Lucas Eddy, Phelecia Scotland, Lane W. Martin, Yimo Han, James M. Tour","doi":"10.1002/aelm.202400603","DOIUrl":"https://doi.org/10.1002/aelm.202400603","url":null,"abstract":"The development of next-generation in-memory and neuromorphic computing can be realized with memory transistors based on 2D ferroelectric semiconductors. Among these, In2Se3 is the interesting since it possesses ferroelectricity in 2D quintuple layers. Synthesis of large amounts of In2Se3 crystals with the desired phase, however, has not been previously achieved. Here, the gram-scale synthesis of α-In2Se3 crystals using a flash-within-flash Joule heating method is demonstrated. This approach allows the synthesis of single-phase α-In2Se3 crystals regardless of the conductance of precursors in the inner tube and enables the synthesis of gram-scale quantities of α-In2Se3 crystals. Then, α-In2Se3 flakes are fabricated and used as a 2D ferroelectric semiconductor FET artificial synaptic device platform. By modulating the degree of polarization in α-In2Se3 flakes according to the gate electrical pulses, these devices exhibit distinct essential synaptic behaviors. Their synaptic performance shows excellent and robust reliability under repeated electrical pulses. Finally, it is demonstrated that the synaptic devices achieve an estimated learning accuracy of up to ≈87% for Modified National Institute of Standards and Technology patterns in a single-layer neural network system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142563328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase-Coherent Transport in GeSn Alloys on Si 硅基 GeSn 合金中的相干传输

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-01 DOI: 10.1002/aelm.202400565

Prateek Kaul, Omar Concepción, Daan H. Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing-Tai Zhao, Alexander Brinkman, Detlev Grützmacher, Dan Buca

引用次数: 0

Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction 欧姆范德瓦尔斯接触结构的界面动量匹配

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-01 DOI: 10.1002/aelm.202400397

Tara Jabegu, Ningxin Li, Aisha Okmi, Benjamin Tipton, Ivan Vlassiouk, Kai Xiao, Sergei Urazhdin, Yao Yao, Sidong Lei

{"title":"Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction","authors":"Tara Jabegu, Ningxin Li, Aisha Okmi, Benjamin Tipton, Ivan Vlassiouk, Kai Xiao, Sergei Urazhdin, Yao Yao, Sidong Lei","doi":"10.1002/aelm.202400397","DOIUrl":"https://doi.org/10.1002/aelm.202400397","url":null,"abstract":"The difficulty of achieving ohmic contacts is a long-standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal-based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene-silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high-quality ohmic contacts. The study establishes the framework for the design of high-performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post-CMOS architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bionic Visual-Auditory Perceptual System Based on Ionotronic Neuromorphic Transistor for Information Encryption and Decryption with Sound Recognition Functions 基于离子神经形态晶体管的仿生视听感知系统，用于信息加密和解密并具有声音识别功能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-11-01 DOI: 10.1002/aelm.202400642

Wei Sheng Wang, Xin Li Chen, You Jie Huang, Xin Huang, Li Qiang Zhu

{"title":"Bionic Visual-Auditory Perceptual System Based on Ionotronic Neuromorphic Transistor for Information Encryption and Decryption with Sound Recognition Functions","authors":"Wei Sheng Wang, Xin Li Chen, You Jie Huang, Xin Huang, Li Qiang Zhu","doi":"10.1002/aelm.202400642","DOIUrl":"https://doi.org/10.1002/aelm.202400642","url":null,"abstract":"The human perceptual system is a multi-modal synergetic sensory learning system. As helps individuals to perceive and understand the world more comprehensively and deeply. Replication of human perceptual systems at the hardware level will significantly boost the progress of neuromorphic platforms. Interestingly, ionotronic device provides rich ionic dynamics for designing neuromorphic devices. It also provides interesting methodology to implement bionic perceptual learning system with multi-modal sensory activities. Here, a bionic visual-auditory perceptual system has been proposed by integrating chitosan-gated oxide ionotronic neuromorphic transistors and auditory sensors. With strong proton gating effects, the system exhibits remarkable multi-modal sensory abilities to sound and light, enabling diverse functions including encrypted sound information transmission and information decoding. The perceptual system can also perform sound recognition by perceiving the volume, tone, and timbre of sound, which results in the implementation of a sound lock function. Thanks to visual-auditory fusion, image encryption and decryption function can also be addressed. This advancement poses innovative insights for the advanced collaborative multi-perceptual intelligent platform.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si 在硅基超薄 BaTiO3 薄膜中实现高铁电极化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-31 DOI: 10.1002/aelm.202400440

Pratik Bagul, Han Han, Pieter Lagrain, Stefanie Sergeant, Ilse Hoflijk, Jill Serron, Olivier Richard, Thierry Conard, Jan Van Houdt, Ingrid De Wolf, Sean R. C. McMitchell

{"title":"Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si","authors":"Pratik Bagul, Han Han, Pieter Lagrain, Stefanie Sergeant, Ilse Hoflijk, Jill Serron, Olivier Richard, Thierry Conard, Jan Van Houdt, Ingrid De Wolf, Sean R. C. McMitchell","doi":"10.1002/aelm.202400440","DOIUrl":"https://doi.org/10.1002/aelm.202400440","url":null,"abstract":"Ferroelectrics show promise for low-power, non-volatile memory technologies. However, material challenges in state-of-the-art ferroelectric hafnates and the high coercive fields required limit their application in devices. Scaling of other candidate materials is challenging, often requiring epitaxial single-crystalline growth using specialised substrates. Here, ferroelectricity is demonstrated in polycrystalline BaTiO3 films at 10 nm thickness on Si substrates. They exhibit the highest reported remnant polarization for polycrystalline layers, 13 µC cm−2, a value that is competitive with the epitaxial BaTiO3 state-of-the-art. This is realised by introducing a novel conductive oxygen barrier, platinum silicide, which also offers strain enhancement of the ferroelectricity. Moreover, it is demonstrated that these layers can be positioned in device-like stacks whilst maintaining ferroelectricity at 10 nm. The findings of polycrystalline perovskite ferroelectric growth in stack configurations akin to those in production flows paves the way for high performance perovskites with greater material complexity.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates 塑料基板上的高性能柔性硅纳米线场效应晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-30 DOI: 10.1002/aelm.202400615

Ting Zhang, Ying Sun, Ruijin Hu, Wentao Qian, Linwei Yu

{"title":"High-Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates","authors":"Ting Zhang, Ying Sun, Ruijin Hu, Wentao Qian, Linwei Yu","doi":"10.1002/aelm.202400615","DOIUrl":"https://doi.org/10.1002/aelm.202400615","url":null,"abstract":"Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high-performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiNW) field effect transistors (FETs) directly onto flexible plastic substrates is showcased. The self-aligned crystalline SiNW multi-channels are first grown through an in-plane solid–liquid–solid mechanism on rigid substrates, and then efficiently transferred in-batch onto flexible polyethylene terephthalate (PET) plastics. The FETs constructed on these transferred SiNW channels exhibit outstanding performance, with a high on/off current ratio of >105, a low subthreshold swing of 175 mV dec−1, and remarkable mechanical stability that can endure an extremely small bending radius of 0.5 mm for 1000 cycles. Furthermore, inverter logics are also successfully demonstrated on plastic substrates, highlighting a prominent routine for scalable integration of high-quality SiNW channels in the development of low-cost, high-performance flexible displays and wearable electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing 氧化铝亚氧化层对用于神经形态计算的无源 Memristor 的电导训练的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-29 DOI: 10.1002/aelm.202400651

Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang

{"title":"Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing","authors":"Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang","doi":"10.1002/aelm.202400651","DOIUrl":"https://doi.org/10.1002/aelm.202400651","url":null,"abstract":"Memristors are recognized as crucial devices for the hardware implementation of neuromorphic computing. The conductance training process of memristors has a direct impact on the performance of neuromorphic computing. However, memristor breakdown and conductance decay still hinder the precise training process of neural networks based on passive memristor. Here, AlOx/LiNbO3 (LN) memristors are designed by inserting a AlOx sub‐oxide layer between the single‐crystalline LN thin film with oxygen vacancies (OVs) and Pt layer. Under the same training conditions, lower conductance and self‐compliance current effects are observed in AlOx/LN memristor. Slight spontaneous decay of conductance is achieved after the removal of the external stimulation. To explore the effects of AlOx sub‐oxide layer on the prevention of device breakdown and suppression of conductance decay, the memristive mechanism of devices with and without AlOx layer is revealed via time‐of‐flight secondary ion mass spectrometer (ToF‐SIMS). It is reasonable to believe that the AlOx inserting layer in memristors can serve as a self‐compliance current layer to inhibit device breakdown and provide the OVs reservoir to suppress conductance decay. These results offer new possibilities and theoretical grounds for achieving more reliable and precise conductance training of passive memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources 氧化锌纳米线冷阴极半球形 X 射线源

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-29 DOI: 10.1002/aelm.202400597

Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen

{"title":"ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources","authors":"Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen","doi":"10.1002/aelm.202400597","DOIUrl":"https://doi.org/10.1002/aelm.202400597","url":null,"abstract":"Curved or spherical X‐ray sources are significant for use in intraoperative radiotherapy, adaptive static medical imaging, and high‐throughput industrial inspection, but they are hard to achieve using traditional thermionic cathode point electron sources. In this study, copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on a brass substrate with a designed shape are proposed to achieve cold cathode hemispherical X‐ray sources. The strain‐driven solid–liquid growth model of Cu‐doped ZnO nanowires is proposed, and the oxidation temperature‐dependent and time‐dependent growth characteristics are investigated to optimize the morphologies of ZnO nanowire cold cathodes with a typical turn‐on field of 7.36 MV m−1, a maximum current of 12.54 mA (4.93 mA cm−2) and a uniform field emission image with an area of 2.54 cm2. Hemispherical X‐ray sources formed by Cu‐doped ZnO nanowire field emitters grown on spherical brass alloy and an Al thin film transmission anode target deposited on a hemispherical quartz glass are successfully fabricated, achieving an operating voltage of 39 kV, a dose rate of 240 µGyair s−1 and a projection X‐ray imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process 用于高移动性 TFT 的氧化铟薄膜比较研究：ALD、PLD 和溶液工艺

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-27 DOI: 10.1002/aelm.202400145

Min Guo, Jianting Wu, Hai Ou, Dongyu Xie, Qiaoji Zhu, Yi Huang, Mengye Wang, Lingyan Liang, Xiaoci Liang, Fengjuan Liu, Ce Ning, Xubing Lu, Hongtao Cao, Guangcai Yuan, Chuan Liu

{"title":"Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process","authors":"Min Guo, Jianting Wu, Hai Ou, Dongyu Xie, Qiaoji Zhu, Yi Huang, Mengye Wang, Lingyan Liang, Xiaoci Liang, Fengjuan Liu, Ce Ning, Xubing Lu, Hongtao Cao, Guangcai Yuan, Chuan Liu","doi":"10.1002/aelm.202400145","DOIUrl":"https://doi.org/10.1002/aelm.202400145","url":null,"abstract":"Deposition of indium oxide base films for high-mobility thin film transistors (TFTs) has been an important part in the implementation of high-resolution and high-frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD-derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four-probe measurements, reaching the level of low-temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD-derived InO film features advantages as compared to those of the PLD-deposited and solution-processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias-stress stability of ALD-derived TFTs can be improved with further passivation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142490967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “Relation between Spherulitic Growth, Molecular Organization and Charge Carrier Transport in Meniscus-Guided Coated Organic Semiconducting Films” 对 "半月板引导涂层有机半导体薄膜中的球状生长、分子组织和电荷载流子传输之间的关系 "的更正

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-10-27 DOI: 10.1002/aelm.202400729

Ke Zhang, Michał Borkowski, Philipp Wucher, Pierre M. Beaujuge, Jasper Michels, Paul. W. M. Blom, Tomasz Marszalek, Wojciech Pisula

引用次数: 0