Advanced Electronic Materials最新文献_第6页

p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties 具有优异电输运性能的p‐Type β‐Ga2O3同外延薄膜

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202500190

Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze

{"title":"p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties","authors":"Zeyu Chi, Corinne Sartel, Vincent Sallet, Bruno Berini, Yves Dumont, Yunlin Zheng, Leonid Chernyak, Miquel Vellvehí, Amador Pérez-Tomás, Ekaterine Chikoidze","doi":"10.1002/aelm.202500190","DOIUrl":"10.1002/aelm.202500190","url":null,"abstract":"This work reports high structural quality and exceptional electrical transport properties of homoepitaxial β-Ga2O3 thin films grown by Metal–Organic Chemical Vapor Deposition (MOCVD) on (010)- and (–201)-oriented substrates. (010) β-Ga2O3 samples exhibit mobility of up to 69.4 cm2 (V·s)−1 and stable hole concentrations ≈2.4 × 1017 cm−3 from 370 to 700 K. Structural and morphological studies, including XRD, AFM, and STEM, confirm high epitaxial quality, absence of extended defects and minimal strain. (–201) β-Ga2O3 layer, which is simultaneously grown, exhibits typical p-Ga2O3 behavior with observed deep level defects. The hole mobility ranging from 26 to 36 cm2 V−1·s−1 is measured between 420 and 700 K. Comparison of (010) and (–201) orientations reveals distinct anisotropic electrical properties. The findings emphasize the free motion of holes in β-Ga2O3 and the critical role of crystallographic orientation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144901832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield FeCu/MWCNT纳米复合材料具有宽的微波吸收带和高减小的雷达截面和远场

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-19 DOI: 10.1002/aelm.202400965

Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara

{"title":"FeCu/MWCNT Nanocomposite with a Broad Microwave Absorption Band and Highly Reduced Radar Cross Section and Farfield","authors":"Fahimeh Zare-Nazari, Mahdieh Dehghani-Dashtabi, Masoud Mohebbi, Hoda Hekmatara","doi":"10.1002/aelm.202400965","DOIUrl":"10.1002/aelm.202400965","url":null,"abstract":"To address the issue of electromagnetic pollution, the development of materials with favorable microwave attenuation over a wide range of frequency, is imperative. These materials should have lightweight and relatively low thickness. In this study, FeCu nanoparticles (NPs) is synthesized using a co-precipitation method, and a novel FeCu/MWCNT nanocomposite is formed by decorating multi-walled carbon (MWCNT) with FeCu NPs in two different ratios (2:1) & (3:1). The FeCu/MWCNT nanocomposites exhibited superior microwave absorption properties, owing to the increased polarization loss (surface polarization and dipole), conduction loss, ferromagnetic and multiple natural resonance. At 9.67 GHz, FeCu/MWCNT (3:1) displayed a minimum reflection loss (RLmin) of −39.82 dB with an effective absorption bandwidth which covered 98.2% of X and Ku bands at a thickness of 1.8 mm. The radar cross section (RCS) and far field simulation confirmed that, covering a typical perfect conductor (PEC) sphere with FeCu/MWCNT nanocomposites causes RCS and far field reduction for 30–50 dB and 20 dB, respectively, in comparison with uncovered PEC.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400965","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144900776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Regiochemistry on Doping and Thermoelectric Properties of n‐Doped Fullerene Derivatives 区域化学对n掺杂富勒烯衍生物掺杂和热电性能的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-18 DOI: 10.1002/aelm.202500287

Federico Ferrari, Sylvia Rousseva, Diego Rosas Villalva, Ewout Kessels, Jan C. Hummelen, Derya Baran, Ryan Chiechi, L. Jan Anton Koster

引用次数: 0

Simultaneous Fermi Level and Weighted Mobility Engineering in CaCuP-Based Thermoelectrics via Multi-Route Compositional Tuning 基于CaCuP的热电器件中费米能级和加权迁移率同步工程的多路组合调谐

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-13 DOI: 10.1002/aelm.202500303

Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir

{"title":"Simultaneous Fermi Level and Weighted Mobility Engineering in CaCuP-Based Thermoelectrics via Multi-Route Compositional Tuning","authors":"Melis Akturk Aktas, Minsu Heo, Se Yun Kim, Saba Sepahban Shahgoli, Tugser Yilmaz, Hyun-Sik Kim, Umut Aydemir","doi":"10.1002/aelm.202500303","DOIUrl":"10.1002/aelm.202500303","url":null,"abstract":"Ternary metal phosphides emerge as promising thermoelectric materials due to their earth-abundant constituents and inherently complex crystal structures, which favor low lattice thermal conductivity (κlat). Here, three routes (slight Ca excess, Zn2+, and La3+ substitution) are investigated to span a broad carrier concentration range, combined with a single parabolic band (SPB) model, confirming that each route shifts Fermi level (Ef) toward the theoretical optimum. Ca1.05CuP maintains its weighted mobility (µW), delivering the highest power factor (≈1.83 mW·m−1·K−2) and a zT of ≈0.45 at 823 K. By contrast, Zn- or La-substituted samples experienced modest µW reductions yet demonstrate that Ef can be tuned almost continuously by stoichiometric engineering. Collectively, these results establish host-cation stoichiometry control as a pathway for continuous Ef engineering and provide practical guidelines for designing phosphide thermoelectrics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144850861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Materia Neuromorphic Properties Induced by Locally Denatured Regions in Sulfonated Polyaniline Networks Incorporating Au Nanoparticles (Adv. Electron. Mater. 12/2025) 含金纳米粒子的磺化聚苯胺网络局部变性区诱导的物质内神经形态特性。板牙。12/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-05 DOI: 10.1002/aelm.70055

Yuki Usami, Tomoyo Fukumaru, Yuya Kawashima, Tomoki Misaka, Yoichi Otsuka, Hiroshi Ohoyama, Yasuhisa Naitoh, Takuya Matsumoto

引用次数: 0

Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways 具有正交电荷传输途径的导电氧化还原互补双配体二维石墨MOF

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-08-05 DOI: 10.1002/aelm.202500319

Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha

{"title":"Electrically Conducting Redox-Complementary Dual-Ligand 2D Graphitic MOF with Orthogonal Charge Transport Pathways","authors":"Shiyu Zhang, Weikang Zhang, Ashok Yadav, Mohd A. H. Ansari, Jonathan L. Cromer, Jorge Barroso, Gavin A. McCarver, Wei Zhou, Sourav Saha","doi":"10.1002/aelm.202500319","DOIUrl":"10.1002/aelm.202500319","url":null,"abstract":"Due to their diverse potential in advanced electronics and energy technologies, electrically conducting metal-organic frameworks (MOFs) are drawing significant attention. Although hexagonal 2D MOFs generally display impressive electrical conductivity because of their dual in-plane (through bonds) and out-of-plane (through π-stacked ligands) charge transport pathways, notable differences between these two orthogonal conduction routes cause anisotropic conductivity and lower bulk conductivity. To address this issue, we have developed the first redox-complementary dual-ligand 2D MOF Cu3(HHTP)(HHTQ), featuring a π-donor hexahydroxytriphenylene (HHTP) ligand and a π-acceptor hexahydroxytricycloquinazoline (HHTQ) ligand located at alternate corners of the hexagons, which form either parallel HHTP and HHTQ stacks (AA stacking) or alternating HHTP/HHTQ stacks (AB stacking) along the c-axis. Regardless of the stacking pattern, Cu3(HHTP)(HHTQ) supports more effective out-of-plane conduction through either separate π-donor and π-acceptor stacks or alternating π-donor/acceptor stacks, while promoting in-plane conduction through the pushpull-like heteroleptic coordination network. As a result, Cu3(HHTP)(HHTQ) exhibits higher bulk conductivity (0.12 S/m at 295 K) than single-ligand MOFs Cu3(HHTP)2 (7.3 × 10−2 S/m) and Cu3(HHTQ)2 (5.9 × 10−4 S/m). This work introduces a new design approach to improve the bulk electrical conductivity of 2D MOFs by supporting charge transport in both in- and out-of-plane direcations.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500319","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144792389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancing Solar Energy with Cs2TlAsI6 Double Halide Perovskite: A Simulation-Driven Approach for High-Efficiency Solar Cell 利用Cs2TlAsI6双卤化物钙钛矿推进太阳能：高效太阳能电池的模拟驱动方法

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-31 DOI: 10.1002/aelm.202500312

Md. Tarekuzzaman, Khandoker Isfaque Ferdous Utsho

{"title":"Advancing Solar Energy with Cs2TlAsI6 Double Halide Perovskite: A Simulation-Driven Approach for High-Efficiency Solar Cell","authors":"Md. Tarekuzzaman, Khandoker Isfaque Ferdous Utsho","doi":"10.1002/aelm.202500312","DOIUrl":"10.1002/aelm.202500312","url":null,"abstract":"Perovskite solar cells (PSCs) are emerging as promising candidates for next-generation photovoltaics due to their remarkable optoelectronic properties. In this study, SCAPS-1D(Solar cell Capacitance Simulator) simulations are employed to evaluate the photovoltaic performance of a lead-free double perovskite, Cs2TlAsI6, as an absorber material. A total of 54 device architectures are systematically explored by combining six different electron transport layers (ETLs: Ws2, TiO2, C60, PCBM, IGTO, and LBSO) with nine-hole transport layers (HTLs: CBTS, Cu2O, CuI, CuSCN, P3HT, PEDOT: PSS, PTAA, GaAs, and CdTe), using Ni as the back contact. The ITO/Ws2/Cs2TlAsI6/Cu2O/Ni configuration achieves the highest power conversion efficiency (PCE) of 26.92%. Further optimization examines the influence of absorber thickness, ETL hthickness, and defect densities on performance. Detailed analyses include band alignment (VBO/CBO), interface defects, carrier dynamics, quantum efficiency, capacitance profiles, Mott–Schottky behavior, and impedance spectra. Additionally, the effects of series and shunt resistance, temperature, and back contact selection are investigated. Structural stability of Cs2TlAsI6 is confirmed via tolerance factor analysis, including Goldschmidt's and a newly proposed parameter. This simulation-driven architectural optimization offers new insights into the potential of Cs2TlAsI6-based PSCs and provides practical design strategies for high-efficiency, lead-free photovoltaic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 16","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500312","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144755962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In Situ Generated Silver Nanoparticles on Boron Nitride Nanosheets Followed by Silane Modification in High-Performance Epoxy Nanocomposites for Advanced Packaging Applications 在氮化硼纳米片上原位生成纳米银并进行硅烷改性的高性能环氧纳米复合材料的先进封装应用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-27 DOI: 10.1002/aelm.202500245

Zihao Lin, Alexandar King, Xueyu Hu, Wenbin Fu, Deven S. Shah, Kyoung-Sik Moon, Wen-Hsi Lee, Ching-Ping Wong

{"title":"In Situ Generated Silver Nanoparticles on Boron Nitride Nanosheets Followed by Silane Modification in High-Performance Epoxy Nanocomposites for Advanced Packaging Applications","authors":"Zihao Lin, Alexandar King, Xueyu Hu, Wenbin Fu, Deven S. Shah, Kyoung-Sik Moon, Wen-Hsi Lee, Ching-Ping Wong","doi":"10.1002/aelm.202500245","DOIUrl":"https://doi.org/10.1002/aelm.202500245","url":null,"abstract":"The increasing power density and miniaturization of modern electronic devices have underscored the critical need for efficient thermal management solutions. Boron nitride nanosheets (BNNS) have emerged as promising fillers for thermally conductive epoxy based composite. However, the improvement of composite thermal conductivity is often constrained by interfacial thermal resistance (ITR) at filler-filler and filler-matrix interfaces. The smooth and inert surface of BNNS exacerbates this challenge. To address these issues, silver nanoparticles (AgNPs) are in situ synthesized on BNNS surfaces through a simple annealing process. The BNNS-Ag fillers are subsequently modified using 3-(Mercaptopropyl)triethoxysilane (MPTS) to enhance filler-polymer matrix interactions through thiol-silver and silane-epoxy reaction. This dual modification strategy reduces ITR at both filler-filler and filler-matrix interfaces, enabling the epoxy nanocomposite to achieve a thermal conductivity of 1.64 W (m·K)−1 at 30 wt.% filler loading, representing an 811.1% improvement compared to neat epoxy. Furthermore, the BNNS-AgNPs@MPTS nanocomposite exhibits excellent electrical properties. Meanwhile, both experimental studies and simulations have demonstrated the promising potential of epoxy nanocomposites as high-performance thermal interface materials (TIMs). These findings provide a novel approach to overcoming interfacial thermal resistance while maintaining high electrical insulation, advancing the design of polymer composites for next-generation advanced electronic packaging applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144715381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shaping Magnetic Liquid Metals Into 3D Leakage‐Free, Shape‐Programmable Structures and Electronics 将磁性液态金属塑造成3D无泄漏，形状可编程结构和电子产品

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-24 DOI: 10.1002/aelm.202500166

Yongyu Lu, Zizheng Wang, Vagif Abdulla, Jacob Pfund, Shao‐Hao Lu, Yi Li, Xincheng Zhang, Gavin Fennell, Yuxuan Zhang, Menka Jain, Yi Zhang, Xueju Wang

{"title":"Shaping Magnetic Liquid Metals Into 3D Leakage‐Free, Shape‐Programmable Structures and Electronics","authors":"Yongyu Lu, Zizheng Wang, Vagif Abdulla, Jacob Pfund, Shao‐Hao Lu, Yi Li, Xincheng Zhang, Gavin Fennell, Yuxuan Zhang, Menka Jain, Yi Zhang, Xueju Wang","doi":"10.1002/aelm.202500166","DOIUrl":"https://doi.org/10.1002/aelm.202500166","url":null,"abstract":"Liquid metals (LMs), renowned for their high conductivity and large deformability, find increasing applications including in flexible electronics and soft robotics. One critical process in these applications is the precise patterning of LMs into desired shapes. Yet, existing LM patterning techniques predominantly focus on 2D patterns due to challenges posed by the inherent fluidity and leakage of LMs. Here, we introduce an approach that bypasses these limitations, enabling the creation of complex 3D leakage‐free LM structures. This is achieved through mechanical programming of 2D magnetically immobilized LM paste formed via incorporating magnetic particles into LMs. Such composite effectively resists leakage due to the combined effect of strong magnetic inter‐attraction within the porous magnetic networks and the high surface tension of LMs, while retaining the high conductivity. Diverse freestanding magnetic LM structures, obtained upon LM solidification at ambient temperature, dynamically morph between their 2D and various 3D configurations through multiple cycles of induction heating and magnetic‐assisted reprogramming, featuring large compression resistance and self‐healing capabilities. Potential applications of these leakage‐resistant, shape‐adaptable structures are demonstrated through a helical magnetic LM antenna, which showcases its efficiency in wireless communication and energy harvesting.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144701434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MXene Aerogel Pressure Sensor Improved by Introducing Intermolecular Forces for Human Motion Detection and Voice Recognition 引入分子间力改进的MXene气凝胶压力传感器，用于人体运动检测和语音识别

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-21 DOI: 10.1002/aelm.202500262

Anqi Zhou, Wenchang Yi, Yingjun Wu, Ziyi Wu, Yawei Fu, Tang Liu, Huimin Li, Naizheng Bian, Song Liu

{"title":"MXene Aerogel Pressure Sensor Improved by Introducing Intermolecular Forces for Human Motion Detection and Voice Recognition","authors":"Anqi Zhou, Wenchang Yi, Yingjun Wu, Ziyi Wu, Yawei Fu, Tang Liu, Huimin Li, Naizheng Bian, Song Liu","doi":"10.1002/aelm.202500262","DOIUrl":"10.1002/aelm.202500262","url":null,"abstract":"MXene aerogels, known for their exceptional conductivity, hold significant potential in the development of pressure sensors. However, the van der Waals forces that solely exist between pure MXene nanosheets are inadequate for forming aerogels with high elasticity and mechanical properties, thus restricting the broad application of MXene aerogels in sensor technology. In this research, reduced graphene oxide (RGO) is utilized as the primary framework and incorporate polyaniline (PANI) to enhance intermolecular interaction forces, employing freeze-drying techniques to fabricate 3D porous-structured MXene aerogels. This approach significantly enhances the elasticity and electrical responsiveness of the aerogel. The resulting aerogel-based pressure sensor exhibits high sensitivity (4 kPa−1), a wide linear response range (1–20 kPa), rapid response/recovery time (300/100 ms), and excellent stability. The sensor is capable of detecting a variety of pressure signals, from gentle breezes to human motion, and is applied in voice recognition. Using a machine learning framework based on feature engineering, it is possible to accurately identify and classify distinctly pronounced letters from sensor outputs with an accuracy rate as high as 98%. In summary, the high-performance flexible pressure sensor based on MXene aerogel shows great potential for applications in health monitoring, smart wearable devices, and artificial intelligence.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 15","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500262","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144669654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0