Advanced Electronic Materials最新文献

{"title":"Metal Cation Chemistry and Amorphous Structure Governing Hydrogen Tolerance in Oxide Semiconductor Channels for 3D DRAM","authors":"Seong-Hwan Ryu,&nbsp;Sun Myung Lee,&nbsp;Kwang-Hee Lee,&nbsp;Jee-Eun Yang,&nbsp;Sangwook Kim,&nbsp;Jin-Seong Park","doi":"10.1002/aelm.70575","DOIUrl":"10.1002/aelm.70575","url":null,"abstract":"<p>This study analyzed hydrogen tolerance in oxide semiconductors subjected to high-temperature H₂ annealing (400–600°C), considering different metal species and crystallinities. First, various amorphous ternary oxides with fixed 1:1 at.% cation ratios were evaluated to isolate elemental effects; in the order Zn, Ga, In, and Sn, thickness retention improved while variations in carrier concentration (<i>n</i>_e) and Hall mobility (<i>µ</i>_Hall) decreased. Next, ternary oxide films with identical compositions were tuned by pre-annealing temperature to obtain crystalline or amorphous phase; the crystalline films exhibited enhanced etching and larger changes in <i>n</i>_e and <i>µ</i>_Hall that are consistent with grain boundary effects. Guided by these observations, amorphous In–Sn–Ga–O (ITGO) was benchmarked against conventional In–Ga–Zn–O (IGZO). The ITGO film maintained a thickness change below 1% with limited Hall variation after H₂ annealing at 600°C. By contrast, the IGZO film exhibited an abrupt increase in <i>n</i>_e exceeding three orders of magnitude after H₂ annealing at 500°C, then exhibited etching at 600°C. The application of ITGO in a field-effect transistor preserved switching characteristics after H₂ annealing up to 600°C, indicating its potential as a channel material for dynamic random-access memory compatible with high-temperature hydrogen thermal budgets.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 18","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70575","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable Superconductivity in Suspended NbSe 2","authors":"Ruihuan Fang, Cuiju Yu, Youqiang Huang, Tosson Elalaily, Yuvraj Chaudhry, Yaoqiang Zhou, Andres Castellanos‐Gomez, Sanshui Xiao, Jiwon Park, Hyunyong Choi, Fida Ali, Hanlin Fang, Jose L. Lado, Pertti Hakonen, Zhipei Sun","doi":"10.1002/aelm.70592","DOIUrl":"https://doi.org/10.1002/aelm.70592","url":null,"abstract":"Van der Waals (vdW) superconductors are highly tunable through strain and thermal fields. Local spatial control enables engineered quantum interference for on‐chip devices, but substrates prevent both selective deformation and heat isolation, limiting the resolution of strain and thermal control of superconductivity. Here, we show that suspended provides a platform in which superconductivity can be controlled through both local strain and enhanced local thermal response. We realize suspended devices in which electrostatically induced deformation modulates the critical temperature by up to 0.92 K (12.5% of ) and enables gate‐tunable superconducting critical currents. We further demonstrate spatially selective superconducting responses and configurable hysteretic transport, including multistability and negative differential resistance. These phenomena are explained by first‐principles calculations of strain‐dependent electron–phonon coupling together with time‐dependent Ginzburg–Landau simulations coupled to thermal diffusion. Our work establishes suspended vdW superconductors as a platform for electrically tunable superconducting devices and for thermal engineering of vortex dynamics, enabling quantum simulation of interacting vortex systems through spatially controlled thermal landscapes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"156 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149048844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation","authors":"Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe","doi":"10.1002/aelm.202600005","DOIUrl":"https://doi.org/10.1002/aelm.202600005","url":null,"abstract":"Stochastic magnetic tunnel junctions (sMTJs) with low energy barriers fluctuate randomly between two resistance states, supplying room‐temperature entropy without pseudo‐random‐number generators. This work develops a device‐faithful sMTJ probabilistic‐bit (p‐bit) model—telegraph switching, a current‐tunable sigmoid response, and Poisson‐distributed dwell times—using literature‐grounded perpendicular‐anisotropy parameters. The p‐bits are integrated into a programmable crossbar whose per‐column accumulation realizes a probability‐domain expectation estimator: the multiply–accumulate is retained as the mean output, while the estimator variance, which scales as over a ‐sample window, provides a calibrated and irreducible measure of uncertainty. A closed‐loop drift self‐calibration scheme re‐biases each cell through a shared digital‐to‐analog converter, turning device volatility from a liability into a managed quantity. A circuit‐level analysis in 22 nm CMOS documents an energy efficiency of up to 869 TOPS/W under a clearly defined read‐phase operation, and an in‐array Monte–Carlo and Bayesian‐uncertainty benchmark quantifies the energy saved by harvesting free thermal entropy instead of CMOS stochastic‐number generators. The architecture is positioned as a sampling accelerator, distinct from stochastic‐computing arithmetic and from coupled Ising machines.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149048849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stable Magnetic Nanodomains Engineered Via Ga\u0000 +\u0000 ‐ion Irradiation For Deterministic Sequential Switching","authors":"Gijs W.A. Simons, Rik F.J. van Haren, Bert Koopmans","doi":"10.1002/aelm.70585","DOIUrl":"https://doi.org/10.1002/aelm.70585","url":null,"abstract":"Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect‐mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here, we demonstrate that spatially engineered anisotropy gradients provide a deterministic alternative. Using focused ‐ion irradiation, we pattern magnetic energy landscapes containing nanoscale “anisotropy wells” that confine magnetic domain walls and enable bidirectional sequential switching without reliance on difficult‐to‐control material disorder. An analytical framework describing domain‐wall energetics in graded anisotropy profiles yields predictive design rules for depinning and stability, which are supported by micromagnetic simulations and experiments. We realize programmable multi‐domain configurations in continuous ferromagnetic films and demonstrate robust, reproducible switching of 750 nm regions, while first results for 100 nm are shown, approaching the theoretical limit set by the domain‐wall width. By replacing unstable pinning with engineered energy landscapes, this anisotropy landscape establishes a scalable materials strategy for deterministic magnetic‐state programming and opens a pathway toward dense, energy‐efficient spintronic and reconfigurable magnetic nanodevices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149021413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Compact Resistively Loaded Metamaterial Absorber for 2.4 GHz RF Energy Harvesting With Impedance‐Matched Rectifier Analysis","authors":"Md. Murad Kabir Nipun, Md. Jahedul Islam","doi":"10.1002/aelm.70597","DOIUrl":"https://doi.org/10.1002/aelm.70597","url":null,"abstract":"This work presents a compact resistively loaded square‐diamond resonator metamaterial absorber for RF energy harvesting at 2.4 GHz. The unit cell has an electrical size of 0.16 <jats:italic>λ</jats:italic> × 0.16 <jats:italic>λ</jats:italic> × 0.013 <jats:italic>λ</jats:italic> and incorporates symmetrically positioned lumped resistive loads to support RF power extraction. Full‐wave CST simulation shows 99.92% absorption at resonance, with the retrieved surface impedance indicating close matching to free‐space impedance. The symmetric square‐diamond geometry provides a polarization‐insensitive response under normal incidence and maintains stable simulated absorption for both TE‐ and TM‐polarized oblique excitation up to 60°. Surface‐current, electric‐field, impedance, and equivalent‐circuit analyses indicate that the absorption behavior is primarily determined by the induced current distribution, field localization, and controlled dissipation through the resistive loads. The simulated RF power‐transfer efficiency to the resistive loads reaches 96.74% at 2.4 GHz. The impedance‐matched two‐diode rectifier provides 75.7% AC‐to‐DC conversion efficiency at RL = 2.36 kΩ, resulting in a simulated cascaded RF‐to‐DC efficiency of 73.23% at 5 dBm input power. A fabricated 4 × 2 absorber array is experimentally characterized, and the measured absorption peak remains close to the simulated resonance. Within this validation scope, the proposed RL‐SDR‐MMA provides a compact RF capture surface for 2.4 GHz energy harvesting, supported by simulated rectifier‐stage conversion analysis.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149019948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near‐Infrared Tin‐Lead Perovskite LEDs","authors":"Jiale Chen, Jiaxiong Li, David Garcia Romero, Lijun Chen, Han Wang, Jane Kardula, Ryan Chiechi, Mordechai Kot, Wouter T. M. Van Gompel, Maria Antonietta Loi","doi":"10.1002/aelm.70566","DOIUrl":"https://doi.org/10.1002/aelm.70566","url":null,"abstract":"Incorporating tin (Sn) and lead (Pb) into metal halide perovskites is an effective strategy for reducing bandgap energy, enabling applications in the near‐infrared (NIR) spectral region. Recently, we demonstrated light‐emitting diodes (LEDs) with long‐wavelength emission peaks exceeding 900 nm. However, non‐radiative recombination at the perovskite/transport layer interface remains a key limitation to device efficiency. In this work, we introduce carbazole ammonium iodide as an interfacial modifier, forming a hydrophilic thin layer atop the PEDOT:PSS hole transport layer. This interlayer enhances surface wettability, promotes improved perovskite crystallization, and facilitates better interface contact. The resulting perovskite films exhibit extended carrier lifetimes, and the corresponding NIR LEDs show reduced leakage current densities. Additionally, we systematically investigate the influence of annealing temperature on Sn–Pb‐based perovskite film formation. X‐ray diffraction (XRD) analysis reveals that high‐temperature annealing accelerates crystallization but promotes PbI <jats:sub>2</jats:sub> formation, leading to rougher surfaces and increased crystal defects. By combining surface modification of the hole transport layer with optimized annealing conditions, we achieve a significant performance enhancement. The NIR LED with an emission peak at 988 nm exhibits a twofold increase in external quantum efficiency (EQE), improving from 0.6% to 1.3%, compared to devices using unmodified PEDOT:PSS.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation","authors":"Davide Rossetti, Yichun Xu, Ludovica Asselta, J. Joshua Yang, R. Stanley Williams, Fernando Corinto","doi":"10.1002/aelm.70580","DOIUrl":"https://doi.org/10.1002/aelm.70580","url":null,"abstract":"Wire resistance in memristor crossbars introduces geometry‐dependent voltage attenuation that degrades analog matrix–vector multiplication (MVM), while parasitic sneak paths further distort output currents as array dimensions scale. Here, we develop a closed‐form distributed line‐resistance model that jointly accounts for horizontal and vertical interconnects as well as parasitic conduction, yielding explicit node‐voltage profiles and a compact analytical description of how interconnect losses modify the effective conductance matrix. Leveraging this predictive framework, computation is kept fully analog and two low‐overhead correction strategies are introduced: (1) a geometry‐aware adjustment of the programmed conductances derived directly from the analytically computed wire‐resistance error; and (2) a four‐configuration symmetry‐averaging scheme that suppresses residual spatial non‐uniformities without requiring any modification to peripheral circuits. Circuit‐ and task‐level evaluations on crossbar arrays demonstrate that, once compensated, MVM errors remain bounded and no longer scale with array size, while accuracy is preserved with a constant corrective overhead of four MVMs per elementary array block, validated up to arrays. By fixing the problem class, correction targets are computed analytically and reused, replacing iterative tuning with predictable operation and enabling reliable analog in‐memory computing at scale.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"81 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors","authors":"Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim","doi":"10.1002/aelm.70579","DOIUrl":"https://doi.org/10.1002/aelm.70579","url":null,"abstract":"IGZO‐based memristors exhibit analog synaptic behavior through Schottky barrier modulation, but the trade‐off among update linearity, dynamic range, and retention governed by interlayer design remains unclear. Here, we comparatively investigated Pd/IGZO/SiO <jats:sub>2</jats:sub> /p <jats:sup>+</jats:sup> ‐Si (Sample #1) and Pd/IGZO/AlO <jats:sub>X</jats:sub> /Al (Sample #2) memristors with naturally formed interlayers induced by different bottom‐electrode stacks. Sample #1 exhibited a <jats:italic>V</jats:italic> <jats:sub>O</jats:sub> ‐rich IGZO layer and soft‐broken SiO <jats:sub>2</jats:sub> interlayer, resulting in larger conductance and superior retention ( <jats:italic>τ</jats:italic> = 3.9 × 10 <jats:sup>4</jats:sup> s). In contrast, the preserved AlO <jats:sub>X</jats:sub> interlayer in Sample #2 enabled voltage‐division‐assisted linear weight updates ( <jats:italic>α</jats:italic> <jats:sub>P</jats:sub> = 1.2, <jats:italic>α</jats:italic> <jats:sub>D</jats:sub> = 0.8) while maintaining near‐unity linearity under stronger programming conditions. Neural‐network simulations further revealed a linearity‐retention trade‐off, where Sample #2 showed faster initial learning, whereas Sample #1 achieved higher peak recognition accuracy (92% vs. 88%). These results highlight oxygen‐scavenging‐based interlayer engineering as an effective strategy for balancing linearity and retention in IGZO synaptic memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque","authors":"Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki","doi":"10.1002/aelm.70545","DOIUrl":"https://doi.org/10.1002/aelm.70545","url":null,"abstract":"Artificially‐designed magnetic hetero‐structures with an antiferromagnetic alignment of magnetization in magnetic layers, which exploit the interlayer exchange coupling (IEC) through a non‐magnetic layer, are called synthetic antiferromagnets (SyAF) and are a treasure trove of functionalities for spintronics applications. In SyAF spintronics, a non‐magnetic layer simultaneously providing IEC and large electric current‐induced torque originating from spin‐orbit interaction, called spin‐orbit torque (SOT), has been eagerly desired for efficient magnetization manipulation by current injection. Here we report that amorphous tungsten (W) is a promising non‐magnetic interlayer. Amorphous W shows clear antiferromagnetic coupling at thicknesses from 1.2 to 2.0 nm, which is thicker than other crystallized non‐magnetic interlayers at the first peak thicknesses of IEC oscillation. In addition, the amorphous W generates large SOT based on the intrinsic process of the spin Hall effect, which allows magnetization vector switching in SyAF. Amorphous W does not possess a well‐defined crystal symmetry. Considering this fact, the long‐range IEC and large SOT originating from the electronic structure in amorphous W are counterintuitive findings. The present study revisits what phases are stabilized in thin W layers, and provides a new avenue for utilizing the amorphous phase as a spintronic material.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"191 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear Dynamics and Invariants of Motion in ReRAM Cells","authors":"Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli","doi":"10.1002/aelm.70553","DOIUrl":"https://doi.org/10.1002/aelm.70553","url":null,"abstract":"Memristor circuits are gaining increasing importance in modern electronics due to their ability to mimic neurons, synapses, and, more generally, the computation capabilities of biological neural systems. The ideal memristor model was introduced by L. Chua in a seminal paper back in 1971. Later on, several more complex memristor models, such as the popular Voltage ThrEshold Adaptive Memristor model, have been developed to better describe the state‐dependent current‐voltage behavior of physical memristor devices, in particular Resistive Random Access Memories, a nanotechnology of great appeal nowadays. While the study of circuits with ideal memristors is reaching a mature state, very few results are available on the analysis of the dynamics of circuits with real memristors. As demonstrated in this paper, peculiar dynamical properties of cells with ideal memristors are also displayed by some analogue electrical circuits with real memristors. In particular, simple circuits, including, as dynamical elements, one capacitor and a memristive one‐port, composed of a pair of back‐to‐back Resistive Random Access Memory devices described through the Voltage ThrEshold Adaptive Memristor model, admit physical quantities, referred to as Invariants of Motion, which are conserved over time. As a consequence, their state space can be foliated into Invariant Manifolds, which induce the coexistence of infinitely many different monostable and bistable quiescent steady states. A second‐order cell from the proposed class may be toggled between regimes of quiescent monostability and bistability by controlling the initial condition‐dependent index of the manifold along which its dynamical variables are constrained to lie at all times. Moreover, at any equilibrium point, the voltage across its capacitor vanishes, which allows the memristive one‐port to hold its state without energy consumption. These attractive properties make the proposed cells ideal candidates to serve as sensing‐and‐memcomputing units for innovative Cellular Neural Networks to be deployed for solving time‐critical edge computing problems in resource‐constrained environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"544 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}