Advanced Electronic Materials最新文献_第6页

Wireless Technologies for Wearable Electronics: A Review 可穿戴电子设备的无线技术：综述

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-26 DOI: 10.1002/aelm.202400884

Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae-Woong Jeong

{"title":"Wireless Technologies for Wearable Electronics: A Review","authors":"Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae-Woong Jeong","doi":"10.1002/aelm.202400884","DOIUrl":"https://doi.org/10.1002/aelm.202400884","url":null,"abstract":"Wireless technologies have profoundly transformed wearable electronics, advancing them from early, wired designs to untethered devices that seamlessly integrate into daily life. The adoption of wireless solutions has unlocked new possibilities, allowing for real-time remote monitoring, enhanced comfort, and greater versatility across diverse settings. These advancements expand the applications of wearable electronics from activity tracking and health monitoring to rehabilitation, human–machine interfaces, and immersive virtual and augmented reality. However, the shift to wireless wearable electronics introduces unique challenges. Unlike traditional tethered systems, wireless wearable electronics must carefully balance power efficiency, communication stability, and user convenience without relying on wired connections. This review examines the recent advancements and challenges in implementing wireless wearable electronics, with a focus on wireless communication and power solutions. It begins by discussing key design considerations for achieving reliable wireless functionality in wearable electronics. Subsequently, it explores wireless communication technologies, ranging from short-range protocols to long-range networks, as well as powering methods, including integrated power sources and energy harvesting technologies. Their diverse applications, particularly in healthcare and interactive systems, are also discussed. Finally, the review highlights major challenges and outlines potential future directions to drive the development of the next generation of wireless wearable electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143517897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Harnessing Earth-Abundant Lead-Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-25 DOI: 10.1002/aelm.202400804

Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun-Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu

{"title":"Harnessing Earth-Abundant Lead-Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing","authors":"Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun-Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu","doi":"10.1002/aelm.202400804","DOIUrl":"https://doi.org/10.1002/aelm.202400804","url":null,"abstract":"Non-volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead-free halide perovskite K2CuBr3, as a novel material candidate for the resistive switching (RS) devices, which features only earth-abundant elements, K, Cu, and Br. To the knowledge, this material is the first low-dimensional halide perovskite with exceptionally low production costs and minimal environmental impact. Owing to the unique 1D carrier transport along the Cu─Br networks, the K2CuBr3 RS device exhibits excellent bipolar switching behavior, with an On/Off window of 105 and a retention time of over 1000 s. The K2CuBr3 RS devices can also act as artificial synapses to transmit various forms of synaptic plasticities, and their integration into a perceptron artificial neural network can deliver a high algorithm accuracy of 93% for image recognition. Overall, this study underscores the promising attributes of K2CuBr3 for the future development of memory storage and neuromorphic computing, leveraging its distinct material properties and economic benefits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-22 DOI: 10.1002/aelm.202400771

Mohammad Abrar Uddin, Myeongju Lim, Rubiga Kim, Barrett London Burgess, Ken Roberts, Junghyun Kim, Taeil Kim

{"title":"Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters","authors":"Mohammad Abrar Uddin, Myeongju Lim, Rubiga Kim, Barrett London Burgess, Ken Roberts, Junghyun Kim, Taeil Kim","doi":"10.1002/aelm.202400771","DOIUrl":"https://doi.org/10.1002/aelm.202400771","url":null,"abstract":"Triboelectric nanogenerators (TENGs) offer a promising solution for energy harvesting in wearable devices and sensors. However, their energy output is dependent on process parameters and should be optimized to maximize performance. Due to the absence of effective analytical models for TENG systems, the complex relationship among these variables and the effect of these variables cannot be easily boiled down into a conventional theoretical framework. To address this problem, this study takes four process parameters such as thickness, pore ratio, applied force, and frequency into account and leverages advanced design methods (e.g., Design of Experiment) and machine learning‐based regression models to systematically explore the design space. A contact‐separation TENG has been designed that includes a tribonegative porous layer of graphene nanoplatelets (GNP) dispersed into polydimethylsiloxane (PDMS) matrix and aluminum as the tribopositive material. Several experiments are conducted to train a support vector regressor (SVR) model, validate the predicted performance, and refine the design that can be further used to obtain an optimized TENG design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-22 DOI: 10.1002/aelm.202400685

Yujue Yang, Zihao Liu, Xueting Liu, Huafeng Dong, Xin Zhang, Juehan Yang, Fugen Wu, Jingbo Li, Nengjie Huo

{"title":"2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1","authors":"Yujue Yang, Zihao Liu, Xueting Liu, Huafeng Dong, Xin Zhang, Juehan Yang, Fugen Wu, Jingbo Li, Nengjie Huo","doi":"10.1002/aelm.202400685","DOIUrl":"https://doi.org/10.1002/aelm.202400685","url":null,"abstract":"Along with continuous size shrinking, conventional silicon based transistors face the the challenges of both manufacture complexity and physical limitations. The negative capacitance transistors (NC‐FETs) using 2D ferroelectric materials as dielectric insulators are emerging as reliable solutions owing to their advantages of breaking the Boltzmann limitation and Complementary Metal‐Oxide Semiconductor (CMOS) compatibility. Here, the room temperature ferroelectricity of 2D AgInP2Se6 is discovered which is further integrated with MoS2 channel into ultra‐steep NC‐FETs for low‐power electronic applications. Due to the negative capacitance effect of AgInP2Se6 during the polarization reversal process, the transistor breaks the Boltzmann limitation with a subthreshold swing (SS) of less than 10 mV decade−1. By optimizing the thickness of AgInP2Se6, superior transistor performance with a minimum SS of 7.75 mV dec−1 and a high on/off ratio of up to 5.88 × 104 can be achieved. This work develops a new 2D ferroelectric AgInP2Se6 with room temperature ferroelectricity, providing promising material platforms for small‐size, ultra‐steep, and low‐power electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"81 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-22 DOI: 10.1002/aelm.202400735

EMK Ikball Ahamed, Hiroyasu Yamahara, Md Shamim Sarker, Haining Li, Kazuo Morikawa, Kohei Yamagami, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata

{"title":"Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films","authors":"EMK Ikball Ahamed, Hiroyasu Yamahara, Md Shamim Sarker, Haining Li, Kazuo Morikawa, Kohei Yamagami, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata","doi":"10.1002/aelm.202400735","DOIUrl":"https://doi.org/10.1002/aelm.202400735","url":null,"abstract":"Rare‐earth iron garnets (RIG, R3Fe5O12) are insulating ferrimagnets with high inversion symmetry because of their centrosymmetric cubic crystal structure. However, this high centrosymmetry can be reduced by introducing a non‐uniform strain, leading to a tetragonally distorted lattice structure. In this study, the strain‐induced lattice distortions and symmetry‐breaking features are investigated in compressively strained Sm3Fe5O12 and tensile‐strained Lu3Fe5O12 thin films around critical thicknesses. Experiments indicate that tensile strain prevents the in‐plane epitaxy from relaxing, whereas compressive strain leads to easy relaxation after reaching a critical threshold triggered by misfit dislocations. A non‐zero orbital moment, a more than tenfold increase in coercivity, and an increase in Gilbert damping near the critical thickness indicate a reduction of spatial inversion symmetry without forming any misfit dislocations. It is speculated that strain energy in uniformly strained epitaxial thin films has been partially released when the thickness reached about the critical thickness. The proposed strain‐mediated reduction of centrosymmetry may pave the way to achieve controllable magneto‐dynamics in dislocation‐free tensile strained RIG thin films.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward High‐Performance Electrochemical Energy Storage Systems: A Case Study on Predicting Electrochemical Properties and Inverse Material Design of MXene‐Based Electrode Materials with Automated Machine Learning (AutoML)

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-22 DOI: 10.1002/aelm.202400818

Berna Alemdag, Görkem Saygili, Matthias Franzreb, Gözde Kabay

{"title":"Toward High‐Performance Electrochemical Energy Storage Systems: A Case Study on Predicting Electrochemical Properties and Inverse Material Design of MXene‐Based Electrode Materials with Automated Machine Learning (AutoML)","authors":"Berna Alemdag, Görkem Saygili, Matthias Franzreb, Gözde Kabay","doi":"10.1002/aelm.202400818","DOIUrl":"https://doi.org/10.1002/aelm.202400818","url":null,"abstract":"This study highlights the potential of Automated Machine Learning (AutoML) to improve and accelerate the optimization and synthesis processes and facilitate the discovery of materials. Using a Density Functional Theory (DFT)‐simulated dataset of monolayer MXene‐based electrodes, AutoML assesses 20 regression models to predict key electrochemical and structural properties, including intercalation voltage, theoretical capacity, and lattice parameters. The CatBoost regressor achieves R2 values of 0.81 for intercalation voltage, 0.995 for theoretical capacity as well as 0.807 and 0.997 for intercalated and non‐intercalated in‐plane lattice constants, respectively. Feature importance analyses reveal essential structure‐property relationships, improving model interpretability. AutoML's classification module also bolsters inverse material design, effectively identifying promising compositions, such as Mg2+‐intercalated and oxygen‐terminated ScC2 MXenes, for high‐capacity and high‐voltage energy storage applications. This approach diminishes reliance on computational expertise by automating model selection, hyperparameter tuning, and performance evaluation. While MXene‐based electrodes serve as a demonstrative system, the methodology and workflow can extend to other material systems, including perovskites and conductive polymers. Future efforts should prioritize integrating AutoML with real‐time experimental feedback and hybrid simulation frameworks to create adaptive systems. These systems can iteratively refine predictions and optimize trade‐offs among critical metrics like capacity, stability, and charge/discharge rates, driving advancements in energy storage and other material applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All Organic Fully Integrated Neuromorphic Crossbar Array 全有机全集成神经形态交叉阵列

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-22 DOI: 10.1002/aelm.202500054

Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt

引用次数: 0

Ohmic Response in BiFeO3 Domain Walls by Submicron‐Scale Four‐Point Probe Resistance Measurements

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-21 DOI: 10.1002/aelm.202400794

Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda

{"title":"Ohmic Response in BiFeO3 Domain Walls by Submicron‐Scale Four‐Point Probe Resistance Measurements","authors":"Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda","doi":"10.1002/aelm.202400794","DOIUrl":"https://doi.org/10.1002/aelm.202400794","url":null,"abstract":"Conducting domain walls (DWs) hold promise for novel electronic devices. However, the electrical characterization of DWs is challenging because of their nanoscale dimensions and the large driving fields that are typically required due to the high resistance of the hosting material. Until now, lateral transport measurements of DWs have mainly been realized using lateral nano‐gap electrode structures or conventional conducting atomic force microscopy (cAFM). Here, a non‐destructive and lithography‐free method is reported for lateral transport measurement of DWs, which is applied to BiFeO3 (BFO) thin films utilizing a submicron‐scale multi‐point probe (MPP). Using different sets of individually biased probe tips, two‐ and four‐point measurements can be conducted over various lateral distances with a minimum tip spacing of several hundreds of nanometers. These measurements reveal the ohmic behavior of ferroelastic/ferroelectric 71° DWs in BFO thin films and the first collinear four‐point resistivity value of a single DW (free of lead and contact resistances). These findings contribute to a better understanding of DW conduction, highlighting the capability of MPPs for lateral transport measurements of materials containing conducting or even memristive nanoscale networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143470586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution‐Processed Bismuth Oxide Iodide/Organic‐Semiconductor Heterojunction for UV–vis‐NIR Photoresponsive Electronics

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-19 DOI: 10.1002/aelm.202400726

Preetam Dacha, Vaidehi Lapalikar, Anju Kumari Rohitlal, Mike Hambsch, Michael Ruck, Stefan C. B. Mannsfeld

{"title":"Solution‐Processed Bismuth Oxide Iodide/Organic‐Semiconductor Heterojunction for UV–vis‐NIR Photoresponsive Electronics","authors":"Preetam Dacha, Vaidehi Lapalikar, Anju Kumari Rohitlal, Mike Hambsch, Michael Ruck, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202400726","DOIUrl":"https://doi.org/10.1002/aelm.202400726","url":null,"abstract":"The emerging light absorber material bismuth oxide iodide BiOI, possesses convenient solution processibility and excellent chemical stability under ambient conditions along with a high light absorption coefficient reaching 5·104 cm−1. Classified as “defect‐tolerant,” BiOI is considered a green and low‐cost alternative to lead‐halide perovskites in optoelectronic devices. Its investigation in photoresponsive electronic devices, however, is limited due to its anisotropic carrier mobility and unique morphology in thin films. To utilize the advantageous properties of BiOI, in this work, it is integrated into a phototransistor as a bilayer heterojunction with the organic semiconductor DPPDTT. The smooth interfaces and higher carrier mobility of DPPDTT compared to BiOI and its hydrophobic nature enable their synergistic hybridization in a heterojunction that is optically active from the UV to the NIR region. The unencapsulated heterojunction phototransistors are stable for at least three months under atmospheric conditions. They show a high Ilight/Idark current ratio of over 104 at only 0.7 mW·cm−2 irradiation intensity at all investigated wavelengths, and a specific detectivity up to 5·1012 Jones. Initial synaptic measurements additionally reveal a neuromorphic behavior in the devices. This work charts a course towards the realization of cost‐effective high‐performance photoresponsive electronics for diverse applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-02-17 DOI: 10.1002/aelm.202400782

Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei

{"title":"Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts","authors":"Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei","doi":"10.1002/aelm.202400782","DOIUrl":"https://doi.org/10.1002/aelm.202400782","url":null,"abstract":"Reconfigurable low‐dimensional devices are attractive for electronics in the post‐Moore era. However, their performance and function design are limited by the metal–semiconductor contacts for the Fermi level pinning and fixed Schottky barrier height (SBH). Here, semimetal carbon nanotube (sCNT) contacts are incorporated into a WSe2 transistor to address these issues. The transistor exhibits excellent ambipolar transfer characteristics with on/off ratio exceeding 107 for both hole and electron conduction. Furthermore, the output characteristics are reconfigured among the four equivalent modes, P–P, P–N, N–P, and N–N, by applying appropriate gate voltage. The significant forward and backward rectifying behaviors at P‐N and N‐P modes are highly symmetrical and have high rectification ratios of over 106. The improvements are attributed to specific semimetal contacts for the gate‐tunable SBH and the drain‐induced Schottky barrier lowering (DISBL) effect. Practical circuits include a reconfigurable filter circuit and a logic invertor have been further demonstrated successfully. The progress reveals that the semimetal contacts have great potential in future reconfigurable devices and circuits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0