{"title":"利用Cs2TlAsI6双卤化物钙钛矿推进太阳能:高效太阳能电池的模拟驱动方法","authors":"Md. Tarekuzzaman, Khandoker Isfaque Ferdous Utsho","doi":"10.1002/aelm.202500312","DOIUrl":null,"url":null,"abstract":"Perovskite solar cells (PSCs) are emerging as promising candidates for next‐generation photovoltaics due to their remarkable optoelectronic properties. In this study, SCAPS‐1D(Solar cell Capacitance Simulator) simulations are employed to evaluate the photovoltaic performance of a lead‐free double perovskite, Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>, as an absorber material. A total of 54 device architectures are systematically explored by combining six different electron transport layers (ETLs: Ws<jats:sub>2</jats:sub>, TiO<jats:sub>2</jats:sub>, C<jats:sub>60</jats:sub>, PCBM, IGTO, and LBSO) with nine‐hole transport layers (HTLs: CBTS, Cu<jats:sub>2</jats:sub>O, CuI, CuSCN, P3HT, PEDOT: PSS, PTAA, GaAs, and CdTe), using Ni as the back contact. The ITO/Ws<jats:sub>2</jats:sub>/Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>/Cu<jats:sub>2</jats:sub>O/Ni configuration achieves the highest power conversion efficiency (PCE) of 26.92%. Further optimization examines the influence of absorber thickness, ETL hthickness, and defect densities on performance. Detailed analyses include band alignment (VBO/CBO), interface defects, carrier dynamics, quantum efficiency, capacitance profiles, Mott–Schottky behavior, and impedance spectra. Additionally, the effects of series and shunt resistance, temperature, and back contact selection are investigated. Structural stability of Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub> is confirmed via tolerance factor analysis, including Goldschmidt's and a newly proposed parameter. This simulation‐driven architectural optimization offers new insights into the potential of Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>‐based PSCs and provides practical design strategies for high‐efficiency, lead‐free photovoltaic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"721 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advancing Solar Energy with Cs2TlAsI6 Double Halide Perovskite: A Simulation‐Driven Approach for High‐Efficiency Solar Cell\",\"authors\":\"Md. Tarekuzzaman, Khandoker Isfaque Ferdous Utsho\",\"doi\":\"10.1002/aelm.202500312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Perovskite solar cells (PSCs) are emerging as promising candidates for next‐generation photovoltaics due to their remarkable optoelectronic properties. In this study, SCAPS‐1D(Solar cell Capacitance Simulator) simulations are employed to evaluate the photovoltaic performance of a lead‐free double perovskite, Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>, as an absorber material. A total of 54 device architectures are systematically explored by combining six different electron transport layers (ETLs: Ws<jats:sub>2</jats:sub>, TiO<jats:sub>2</jats:sub>, C<jats:sub>60</jats:sub>, PCBM, IGTO, and LBSO) with nine‐hole transport layers (HTLs: CBTS, Cu<jats:sub>2</jats:sub>O, CuI, CuSCN, P3HT, PEDOT: PSS, PTAA, GaAs, and CdTe), using Ni as the back contact. The ITO/Ws<jats:sub>2</jats:sub>/Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>/Cu<jats:sub>2</jats:sub>O/Ni configuration achieves the highest power conversion efficiency (PCE) of 26.92%. Further optimization examines the influence of absorber thickness, ETL hthickness, and defect densities on performance. Detailed analyses include band alignment (VBO/CBO), interface defects, carrier dynamics, quantum efficiency, capacitance profiles, Mott–Schottky behavior, and impedance spectra. Additionally, the effects of series and shunt resistance, temperature, and back contact selection are investigated. Structural stability of Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub> is confirmed via tolerance factor analysis, including Goldschmidt's and a newly proposed parameter. This simulation‐driven architectural optimization offers new insights into the potential of Cs<jats:sub>2</jats:sub>TlAsI<jats:sub>6</jats:sub>‐based PSCs and provides practical design strategies for high‐efficiency, lead‐free photovoltaic devices.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"721 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500312\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500312","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Advancing Solar Energy with Cs2TlAsI6 Double Halide Perovskite: A Simulation‐Driven Approach for High‐Efficiency Solar Cell
Perovskite solar cells (PSCs) are emerging as promising candidates for next‐generation photovoltaics due to their remarkable optoelectronic properties. In this study, SCAPS‐1D(Solar cell Capacitance Simulator) simulations are employed to evaluate the photovoltaic performance of a lead‐free double perovskite, Cs2TlAsI6, as an absorber material. A total of 54 device architectures are systematically explored by combining six different electron transport layers (ETLs: Ws2, TiO2, C60, PCBM, IGTO, and LBSO) with nine‐hole transport layers (HTLs: CBTS, Cu2O, CuI, CuSCN, P3HT, PEDOT: PSS, PTAA, GaAs, and CdTe), using Ni as the back contact. The ITO/Ws2/Cs2TlAsI6/Cu2O/Ni configuration achieves the highest power conversion efficiency (PCE) of 26.92%. Further optimization examines the influence of absorber thickness, ETL hthickness, and defect densities on performance. Detailed analyses include band alignment (VBO/CBO), interface defects, carrier dynamics, quantum efficiency, capacitance profiles, Mott–Schottky behavior, and impedance spectra. Additionally, the effects of series and shunt resistance, temperature, and back contact selection are investigated. Structural stability of Cs2TlAsI6 is confirmed via tolerance factor analysis, including Goldschmidt's and a newly proposed parameter. This simulation‐driven architectural optimization offers new insights into the potential of Cs2TlAsI6‐based PSCs and provides practical design strategies for high‐efficiency, lead‐free photovoltaic devices.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.