Taewon Seo, Juyoung Yun, Seung-Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung
{"title":"对“通过后退火工艺提高In - Ga - Zn - O晶体管可靠性的氢等离子体处理无副作用”的修正","authors":"Taewon Seo, Juyoung Yun, Seung-Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung","doi":"10.1002/aelm.202500509","DOIUrl":null,"url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2025</b>, <i>11</i>, 2400893</p><p>DOI: 10.1002/aelm.202400893</p><p>In the originally published version of this Article, the co-first authorship statement for T. S. and J. Y. was missing from the Acknowledgements. The correct Acknowledgements are reproduced below.</p><p>T.S. and J.Y. contributed equally to this work. This research was supported by the Next-Generation Intelligent Semiconductor Technology Development Program (2022M3F3A2A03015763) through the National Research Foundation funded by the Ministry of Science and ICT, the Technology Innovation Program (RS-2023-00235402, RS-2024-00405179, 24048-15TC) funded by the Ministry of Trade, Industry & Energy, the IC Design Education Center (IDEC), and the Educational Institute for Intelligent Information Integration through the BK21 FOUR project.</p><p>The authors apologize for this error.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 14","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500509","citationCount":"0","resultStr":"{\"title\":\"Correction to “Hydrogen Plasma Treatment for Improving Reliability of In-Ga-Zn-O Transistors Without Side Effects Through Post-Annealing Process”\",\"authors\":\"Taewon Seo, Juyoung Yun, Seung-Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung\",\"doi\":\"10.1002/aelm.202500509\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><i>Adv. Electron. Mater</i>. <b>2025</b>, <i>11</i>, 2400893</p><p>DOI: 10.1002/aelm.202400893</p><p>In the originally published version of this Article, the co-first authorship statement for T. S. and J. Y. was missing from the Acknowledgements. The correct Acknowledgements are reproduced below.</p><p>T.S. and J.Y. contributed equally to this work. This research was supported by the Next-Generation Intelligent Semiconductor Technology Development Program (2022M3F3A2A03015763) through the National Research Foundation funded by the Ministry of Science and ICT, the Technology Innovation Program (RS-2023-00235402, RS-2024-00405179, 24048-15TC) funded by the Ministry of Trade, Industry & Energy, the IC Design Education Center (IDEC), and the Educational Institute for Intelligent Information Integration through the BK21 FOUR project.</p><p>The authors apologize for this error.</p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"11 14\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500509\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500509\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500509","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Correction to “Hydrogen Plasma Treatment for Improving Reliability of In-Ga-Zn-O Transistors Without Side Effects Through Post-Annealing Process”
Adv. Electron. Mater. 2025, 11, 2400893
DOI: 10.1002/aelm.202400893
In the originally published version of this Article, the co-first authorship statement for T. S. and J. Y. was missing from the Acknowledgements. The correct Acknowledgements are reproduced below.
T.S. and J.Y. contributed equally to this work. This research was supported by the Next-Generation Intelligent Semiconductor Technology Development Program (2022M3F3A2A03015763) through the National Research Foundation funded by the Ministry of Science and ICT, the Technology Innovation Program (RS-2023-00235402, RS-2024-00405179, 24048-15TC) funded by the Ministry of Trade, Industry & Energy, the IC Design Education Center (IDEC), and the Educational Institute for Intelligent Information Integration through the BK21 FOUR project.
期刊介绍：
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
