Controlling Bias Field of Pinned Layer Stacks for Double‐Pinned‐Layer Magnetic Tunnel Junction for STT‐MRAM

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-08-26 DOI:10.1002/aelm.202500132

Shujun Ye, Koichi Nishioka

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引用次数: 0

Abstract

Double‐pinned‐layer Magnetic Tunnel Junction (Double PL MTJ) enhances spin‐transfer‐torque magneto‐resistive random‐access memory (STT‐MRAM) performance by requiring anti‐parallel magnetization between both PLs at free layer interfaces and minimizing magnetostatic bias field (Hbias) from both PLs to enable reliable switching. In this study, a numerical method is established to accurately calculate Hbias and investigate PL designs that simultaneously fulfill both conditions. Among the configurations examined, a bottom PL composed of anti‐parallel (AP) coupled three magnetic layers (FM1, FM2, and FM3) combined with a top PL consisting of two such layers (FM4 and FM5) is identified a optimal. This configuration achieved the desired anti‐parallel magnetization at FL interfaces and effectively suppressed Hbias. The proposed structure enables a robust design strategy for Double PL MTJ, addressing key limitations such as high write current and paving the way for MTJ for large‐scale application in STT‐MRAM.

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STT - MRAM双钉住层磁隧道结钉住层堆的偏置场控制

双钉钉层磁隧道结（双PL MTJ）通过要求两个PLs在自由层接口处的反平行磁化和最小化两个PLs的静磁偏置场（Hbias）来实现可靠的开关，从而提高了自旋传递扭矩磁阻随机存取存储器（STT - MRAM）的性能。在本研究中，建立了一种数值方法来精确计算Hbias，并研究同时满足这两个条件的PL设计。在检查的配置中，由反平行（AP）耦合的三个磁性层（FM1， FM2和FM3）组成的底部PL与由两个这样的层（FM4和FM5）组成的顶部PL被认为是最优的。这种结构在FL界面上实现了所需的反平行磁化，并有效地抑制了Hbias。所提出的结构为双PL MTJ提供了强大的设计策略，解决了高写入电流等关键限制，并为MTJ在STT - MRAM中的大规模应用铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.