Photoluminescence and Room‐Temperature Ferromagnetism in CuO:Ho Dilute Magnetic Semiconductor Materials

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-07-28 DOI:10.1002/aelm.202400857

Xun Wang, Yahui Zhai, Zichu Zhang, Zhen Sun, Mingyan Chuai

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引用次数: 0

Abstract

A chemical vapor‐liquid phase deposition and subsequent auxiliary heating method is developed to synthesize crystal CuO and CuO:Ho terrace structures. CuO terrace structures display weak ferromagnetic behavior owing to their unique crystal structure. The ferromagnetism of CuO:Ho terrace structures is significantly enhanced compared to the crystal CuO, and the values of the saturation magnetization present a parabolic trend with the increase of Ho ions doping concentrations. The magnetism of the crystal CuO:Ho terrace structures is mainly derived from the magnetic moment provided by the synergistic effect of Ho ions doping and oxygen vacancies. The saturation magnetizations and the coercivity of CuO:Ho (x = 0.88%) sample are 0.0595 emu g−1 and 90.5 Oe, respectively. The first‐principles calculations have been used to investigate the origin of ferromagnetism of the CuO:Ho terrace structures. The result of spin polarization density of states and spatial distribution of the spin density show that the origin of the ferromagnetism for CuO:Ho crystal is mainly attributed to the exchange interactions among the O 1s, Cu 2p, and Ho 4f orbits. The terrace structure of CuO:Ho samples offers a defined interface for controlling spin‐polarized states, making it suitable for exploring new spintronic phenomena.

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CuO:Ho稀释磁性半导体材料的光致发光和室温铁磁性

采用化学气液相沉积和辅助加热的方法合成了CuO晶体和CuO:Ho阶地结构。CuO平台结构由于其独特的晶体结构而表现出弱铁磁性。与结晶CuO相比，CuO:Ho阶地结构的铁磁性显著增强，饱和磁化强度随Ho离子掺杂浓度的增加呈抛物线趋势。CuO:Ho台阶结构晶体的磁性主要来源于Ho离子掺杂与氧空位的协同作用所提供的磁矩。CuO:Ho （x = 0.88%）样品的饱和磁化强度为0.0595 emu g−1，矫顽力为90.5 Oe。第一性原理计算已被用于研究CuO:Ho阶地结构铁磁性的起源。态的自旋极化密度和自旋密度的空间分布结果表明，CuO:Ho晶体的铁磁性主要来源于O 1s、Cu 2p和Ho 4f轨道之间的交换相互作用。CuO:Ho样品的平台结构为控制自旋极化态提供了一个明确的界面，使其适合于探索新的自旋电子现象。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.