Critical Assessment of Contact Resistance and Mobility in Tin Perovskite Field-Effect Transistors

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Youcheng Zhang, Stefano Pecorario, Xian Wei Chua, Xinglong Ren, Cong Zhao, Rozana Mazlumian, Satyaprasad P. Senanayak, Krishanu Dey, Samuel D. Stranks, Henning Sirringhaus
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Abstract

Recent reports highlight the potential of tin-based perovskite semiconductors for high-performance p-type field-effect transistors (FETs) with mobilities exceeding 20 cm2 V⁻¹ s⁻¹. However, these high mobilities—often obtained via two-probe (2P) methods on devices with small channel length-to-width ratios (L/W < 0.5) operating in the saturation regime at high drain-source currents—raise concerns about overestimation due to contact resistance and non-ideal FET characteristics. Here, gated four-point probe (4PP) FET measurements is performed on Hall bar devices (L/W = 5) of Cs0.15FA0.85SnI3, obtaining a consistent mobility of 3.4 cm2 V⁻¹ s⁻¹. VG-dependent 4PP mobility is accurately extracted using the Hofstein and Heiman's MOSFET model. Upon comparing these with gated 2P measurements of narrow-channel FETs (L/W = 0.1) on the same chip, the contact resistance (RC) is resolved. The 2P linear mobility is underestimated due to voltage drops across RC, while the 2P saturation mobility is overestimated because of high ( R C V G $\frac{{\partial {R_C}}}{{\partial {V_G}}}$ ) near the threshold. Contact resistance effects become more pronounced at lower temperatures. Contact-corrected 4-point-probe (4PP) mobilities are independent of bias conditions and are observed to flatten at temperatures lower than 180 K. Future reports of perovskite FET mobilities should include gated 4PP measurements and use devices with larger L/W ratios to minimize nonidealities arising from contact resistance effects.

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锡钙钛矿场效应晶体管接触电阻和迁移率的临界评估
最近的报告强调了锡基钙钛矿半导体用于高性能p型场效应晶体管(fet)的潜力,其迁移率超过20平方厘米。然而,这些高迁移率——通常通过双探头(2P)方法在高漏源电流饱和状态下工作的小沟道长宽比(L/W &lt; 0.5)器件上获得——引起了由于接触电阻和非理想场效应管特性而导致的高估的担忧。在这里,门控四点探针(4PP)场效应晶体管测量是在Cs0.15FA0.85SnI3的霍尔棒装置(L/W = 5)上进行的,得到了3.4 cm2 V⁻¹s⁻¹的恒定迁移率。使用Hofstein和Heiman的MOSFET模型准确地提取了依赖于vg的4PP迁移率。将这些与同一芯片上窄通道场效应管(L/W = 0.1)的门控2P测量结果进行比较,可以解决接触电阻(RC)问题。由于RC上的电压降,2P线性迁移率被低估了。而2P饱和迁移率由于高(∂R C∂V G $\frac{{\partial {R_C}}}{{\partial {V_G}}}$)而被高估了)靠近门槛。接触电阻效应在较低的温度下变得更加明显。接触校正的4点探针(4PP)迁移率与偏置条件无关,并且在低于180 K的温度下观察到变平。未来关于钙钛矿场效应管迁移率的报告应该包括门控4PP测量,并使用更大的L/W比的器件,以尽量减少接触电阻效应引起的非理想性。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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