Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama
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引用次数: 0

Abstract

The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem. However, the reported studies on diodes based on 2D and metal‐oxide semiconductors for digital circuits are limited to basic logic gates. The Schottky diodes‐based integrated circuit feasibility and scalability discussions are lacking. In this work, the large throughput and cost‐effective adhesion lithography in tandem with the solution‐based method is used to fabricate integrated functional circuits for Arithmetic Logic Unit (ALU). The self‐aligned nanogap separation between interdigitated coplanar aluminum (Al) and gold (Au) electrodes is uniform throughout the fabricated diode width, resulting in a high rectification ratio of 5 × 106. The fundamental logic AND, OR, and XOR gates based on nanogap Schottky diodes are fabricated, from which arbitrary logic and arithmetic functional circuits can be constructed. To demonstrate the large‐area integration, a 3‐bit Binary Shifter circuit is implemented. The measurement‐based Keysight ADS diode model is used to design a complete 4‐bit ALU circuit. The excellent circuit‐level performance, large‐area scalability, design flexibility, and cost‐efficiency of logic circuits based on nanogap Schottky diodes make them promising candidates for future Internet of Things applications.
基于氧化锌纳米隙肖特基二极管的算术逻辑单元电路
肖特基二极管固有的高非线性,在性能、材料和设计新颖方面的最新改进,使它们在新兴的器件生态系统中具有不可估量的价值。然而,基于二维和金属氧化物半导体的数字电路二极管的研究仅限于基本逻辑门。基于肖特基二极管的集成电路的可行性和可扩展性讨论是缺乏的。在这项工作中,大通量和成本效益的粘附光刻技术与基于溶液的方法相结合,用于制造算术逻辑单元(ALU)的集成功能电路。互指共面铝(Al)和金(Au)电极之间的自对准纳米隙分离在整个制造二极管宽度内均匀,导致5 × 106的高整流比。制作了基于纳米隙肖特基二极管的基本逻辑与门、或门和异或门,由此可以构造任意逻辑和算术功能电路。为了演示大面积集成,实现了一个3位二进制移位电路。基于测量的Keysight ADS二极管模型用于设计一个完整的4位ALU电路。基于纳米隙肖特基二极管的逻辑电路具有优异的电路级性能、大面积可扩展性、设计灵活性和成本效益,使其成为未来物联网应用的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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