用于下一代硅上绝缘体的热传导性埋地氮化铝

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-07-14 DOI:10.1002/aelm.202500175

Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel

{"title":"用于下一代硅上绝缘体的热传导性埋地氮化铝","authors":"Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel","doi":"10.1002/aelm.202500175","DOIUrl":null,"url":null,"abstract":"Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m−1 K−1 and thermal boundary conductance (TBC) of 147 MW m−2 K−1. Modified Williamson‐Hall (W‐H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross‐plane heat spreader in our AlN‐SOI platform.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator\",\"authors\":\"Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel\",\"doi\":\"10.1002/aelm.202500175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m−1 K−1 and thermal boundary conductance (TBC) of 147 MW m−2 K−1. Modified Williamson‐Hall (W‐H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross‐plane heat spreader in our AlN‐SOI platform.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"38 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500175\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500175","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

由于二氧化硅的低导热性，绝缘体上硅（SOI）衬底受到热约束和自热效应的影响。多晶氮化铝（AlN）薄膜可以很好地替代有效的散热，同时也是一种优秀的电绝缘体。本研究报道了用反应磁控溅射、原子层沉积（ALD）和金属有机气相外延（MOVPE）在Si（111）衬底上生长AlN薄膜。强取向MOVPE薄膜的热导率为191 W m−1 K−1，热边界导率（TBC）为147 MW m−2 K−1。改进的Williamson‐Hall （W‐H）图可以为这些高取向薄膜提供晶粒尺寸分析，以监测预期的导热性。这项研究表明，反应溅射和MOVPE AlN薄膜在我们的AlN - SOI平台上作为集成的跨平面散热片是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m−1 K−1 and thermal boundary conductance (TBC) of 147 MW m−2 K−1. Modified Williamson‐Hall (W‐H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross‐plane heat spreader in our AlN‐SOI platform.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.