Advanced Electronic Materials最新文献

{"title":"Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn2P2","authors":"Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça-Fereira, Adriano R. V. Benvenho, Elisa Baggio-Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez","doi":"10.1002/aelm.70474","DOIUrl":"10.1002/aelm.70474","url":null,"abstract":"<p>The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>EuZn</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>P</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>${rm EuZn}_2 {rm P}_2$</annotation>\u0000 </semantics></math> is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>EuZn</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>P</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>${rm EuZn}_2 {rm P}_2$</annotation>\u0000 </semantics></math> (<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>EuZn</mi>\u0000 <mn>1.8</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>Ga</mi>\u0000 <mn>0.2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>P</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>${rm EuZn}_{1.8} {rm Ga}_{0.2} {rm P}_2$</annotation>\u0000 </semantics></math>) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of <span></span><math>\u0000 <semantics>\u0000 <msup>\u0000 <mi>Eu</mi>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 <mo>+</mo>\u0000 </mrow>\u0000 </msup>\u0000 <annotation>${rm Eu}^{2+}$</annotation>\u0000 </semantics></math> moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. The Ga-substituted compound displays pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an increased carrier scattering time and enhanced carrier-density–to–effective-mass ratio. These results demonstrate that Ga substitution tunes charge transport, carrier dynamics, and short-range magnetic correlations in <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70474","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148415112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"One-Step Synthesis of Size-Controlled Copper Oxide Nanoparticles on Laser-Induced Graphene Sensor for L-Cysteine Detection","authors":"Gustavo Miguel Sousa,&nbsp;Ketley Caroline Rocha Pereira,&nbsp;Deissy Johanna Feria Garnica,&nbsp;Marcos Rocha Diniz da Silva,&nbsp;Matheus Santos Dias,&nbsp;Camila Marchetti Maroneze,&nbsp;Cecilia de Carvalho Castro Silva","doi":"10.1002/aelm.70562","DOIUrl":"10.1002/aelm.70562","url":null,"abstract":"<p>Laser-induced graphene (LIG) has emerged as a sustainable platform for electrochemical sensing due to its low-cost, chemical-free, and scalable fabrication. However, integrating metal or metal oxide nanoparticles into LIG remains challenging, as traditional doping strategies are constrained by complex pretreatment procedures and poor metal cation–graphene interfacial interactions, limiting performance. Therefore, simple and efficient strategies for metal-doped LIG are highly desirable. Herein, we report a single-step, in situ approach for synthesizing CuO-decorated LIG using polyimide (PI) as precursor, targeting electrochemical detection of L-cysteine (L-Cys). Oxygen plasma pretreatment enhances PI surface hydrophilicity and promotes precursor anchoring, enabling improved nanoparticle dispersion. Subsequent laser irradiation simultaneously induces LIG formation and CuO nanoparticle synthesis. Importantly, this strategy enables control of nanoparticle size by tuning precursor concentration, yielding average diameters of ≈53 nm (50 m<span>m</span>) and ≈194 nm (100 m<span>m</span>), a feature rarely explored in LIG systems. Structural and compositional analyses confirm CuO incorporation into the LIG matrix while preserving high conductivity (≈20 Ω sq⁻¹). As a proof of concept, CuO–LIG electrodes exhibit enhanced electrochemical performance for L-Cys detection, reducing oxidation overpotential to 350 mV vs Ag/AgCl (3 <span>m</span> KCl), achieving a limit of detection of 8.89 µ<span>m</span> and fast response time, only 0.23 ± 0.06 s, demonstrating a simple and effective route for LIG-based sensors.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70562","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials","authors":"Mojtaba Joodaki,&nbsp;Babitha Arun,&nbsp;Hartmut Hillmer,&nbsp;Chih-Chieh Hsu","doi":"10.1002/aelm.70489","DOIUrl":"10.1002/aelm.70489","url":null,"abstract":"<p>Because of features such as high speed, scalability, low programming voltage, and low power consumption, RRAM (Resistive Random Access Memory) is a leading candidate for next-generation non-volatile memories. Among the diverse array of active materials investigated for RRAM devices, two-dimensional (2D) halide perovskites have garnered considerable interest due to their adjustable optoelectronic characteristics, ease of solution processing, and compatibility with flexible substrates. However, the inherent sensitivity of halide perovskites to environmental conditions presents significant obstacles in achieving stable and reliable device performance. This review examines how humidity, temperature, illumination, and mechanical strain affect the performance of RRAM devices based on 2D halide perovskites. This review explores how various stress factors contribute to degradation mechanisms and their effects on switching characteristics, endurance, and data retention. The paper also highlights the analytical techniques used to evaluate the stability of these devices. In addition, recent advances are presented in both material design and device architecture aimed at improving resistance to environmental influences. By pinpointing critical obstacles and unmet research needs, this review charts a path toward resilient 2D perovskite RRAM for real-world applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70489","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148564647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion-Gating Reservoir Computing for Preprocessing-Free Speech Recognition from Throat Vibrations","authors":"Daiki Nishioka,&nbsp;Akito Tateyama,&nbsp;Hina Kitano,&nbsp;Takashi Nakanishi,&nbsp;Kazuya Terabe,&nbsp;Takashi Tsuchiya","doi":"10.1002/aelm.202600006","DOIUrl":"10.1002/aelm.202600006","url":null,"abstract":"<p>Physical reservoir computing offers a promising route to efficient edge-AI, yet most reservoir-based speech-recognition demonstrations still rely on microphones and digital preprocessing. Here, we report a real-time spoken-digit recognition system that directly processes throat vibrations by integrating a π–gel-electret mechano-electric generator (MEG) sensor with a multi-channel ion-gel/graphene ion-gating reservoir (IGR). The MEG, a free-deformable electret-based vibration sensor, converts articulation-induced throat-surface vibrations into voltage signals, which are then transformed into pulse sequences and applied directly to the IGR gate without any spectral or handcrafted feature extraction. Channel-dependent Dirac-point shifts, nonlinear electric-double-layer dynamics, and distinct relaxation behaviors in the IGR expand the one-dimensional MEG output into high-dimensional reservoir states, which are decoded using a simple linear classifier. This hybrid MEG–IGR system achieves an impressive real-time spoken-digit recognition accuracy of 96.8%, demonstrating that ion-gating reservoirs can efficiently extract discriminative spatiotemporal features from raw biomechanical signals. By eliminating frequency-domain preprocessing and enabling compact, low-power front-end computation, the approach provides a viable pathway for on-device speech interfaces. Beyond speech recognition, direct throat-vibration sensing opens opportunities for robust human–machine interfaces, assistive communication technologies, and secure authentication systems based on spoof-resistant biomechanical signatures.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202600006","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147751662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integration of Redox-Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching","authors":"Jonas Lorenz,&nbsp;Marco Moors,&nbsp;Tom Scherzer,&nbsp;Olesya Daikos,&nbsp;Jens Bauer,&nbsp;Andrea Prager,&nbsp;Jan Griebel,&nbsp;Yeji Lee,&nbsp;Vineeth Kumar Bandari,&nbsp;Thomas Blaudeck,&nbsp;Oliver G. Schmidt,&nbsp;Kirill Monakhov","doi":"10.1002/aelm.70481","DOIUrl":"10.1002/aelm.70481","url":null,"abstract":"<p>Developing electrically contacted architectures for molecular data storage remains a central challenge in molecular electronics. Here, we integrate redox-active polyoxovanadate clusters – [V₆O₁₃((OCH₂)₃CCH₂OH)₂]^2– charge-balanced by <i>n</i>Bu₄N⁺ (<b>TBA-V₆OH</b>) – into a solvent-processable poly(methyl methacrylate) (PMMA) matrix and investigate their structural and electronic behavior as a function of composition and processing. Spectroscopic and microscopic analyses confirm preservation of the polyoxometalate framework and reveal concentration-dependent organization from isolated species to extended domains. Scanning tunneling microscopy/spectroscopy (STM/STS) demonstrates redox-dependent switching at the nanoscale, which remains observable across different morphologies. Macroscopic electrical measurements on prototype devices further indicate that this redox activity is retained in an electrically contacted configuration. These results establish a processable POM–polymer composite platform for exploring redox-active molecular functionality in solid-state environments.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70481","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148498977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mn-Substituted Topological Phase Transition in Topological Insulator Pt2HgSe3","authors":"Deergh Bahadur Shahi,&nbsp;Gang Bahadur Acharya,&nbsp;Dipak Bhattarai,&nbsp;Bishnu Karki,&nbsp;Madhav Prasad Ghimire","doi":"10.1002/aelm.70588","DOIUrl":"10.1002/aelm.70588","url":null,"abstract":"&lt;p&gt;Topological materials have gained a significant interest in recent years due to their unique features, leading to topological insulators (TI), Dirac or Weyl semimetals, etc. The layered material &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Pt&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;HgSe&lt;/mi&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;${rm Pt}_2{rm HgSe}_3$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; is found to be a dual TI characterized by significant spin–orbit coupling and band inversion. We employ a density functional theory (DFT) approach to search a magnetic Weyl semimetal (WSM) by replacing Pt (I) with Mn in &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Pt&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;HgSe&lt;/mi&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;${rm Pt}_2{rm HgSe}_3$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;. Here, Mn substitution introduces an exchange field, resulting time-reversal symmetry breaking by lifting spin degeneracy of bulk Dirac states in the band structure. Topological property calculation shows that Mn-substituted &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Pt&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;HgSe&lt;/mi&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;annotation&gt;${rm Pt}_2{rm HgSe}_3$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; is a magnetic WSM having 24 Weyl points close to the Fermi level. They are found to influence intrinsic anomalous Hall conductivity that rises up to &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mo&gt;∼&lt;/mo&gt;\u0000 &lt;annotation&gt;$sim$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;1100 S/cm around 0.8 eV and &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mo&gt;∼&lt;/mo&gt;\u0000 &lt;annotation&gt;$sim$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;280 S/cm at the Fermi level along easy magnetization axis [001]. Our study shows that substitution of a magnetic atom can play a significant role in tuning the electronic topology of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Pt&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;HgSe&lt;/mi&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 ","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70588","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental Evidence for the Impact of Copper Microstructure on Residual Stress of Through Silicon Via","authors":"Shuhang Lyu,&nbsp;Thomas Beechem,&nbsp;Tiwei Wei","doi":"10.1002/aelm.70600","DOIUrl":"10.1002/aelm.70600","url":null,"abstract":"<p>Three-dimensional integrated circuits (3DICs) with Cu through silicon vias (TSVs) offer improved system performance beyond front-end-of-line scaling. However, the residual thermal stress imparted by TSVs on the surrounding silicon raises reliability concerns. This stress depends on the mechanical properties of Cu, which are governed by its underlying microstructure because of the metal's anisotropic elastic modulus. Smaller TSVs magnify this microstructural effect due to the increased grain-to-via diameter ratio. Here, we experimentally quantify the impact of Cu microstructure on the TSV-induced residual stress within silicon. A 3-<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>μ</mi>\u0000 <mi>m</mi>\u0000 </mrow>\u0000 <annotation>${umu }mathrm{m}$</annotation>\u0000 </semantics></math>-diameter TSV array was annealed at 400<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mrow></mrow>\u0000 <mo>∘</mo>\u0000 </msup>\u0000 <mi>C</mi>\u0000 </mrow>\u0000 <annotation>$mathrm{protect mathrm{mathrm{^{circ }}mathrm{mathrm{C}}}}$</annotation>\u0000 </semantics></math> for 60 min, and the residual stress in the surrounding Si was imaged with Raman spectroscopy at room temperature. The Cu surface microstructure was characterized with electron backscatter diffraction (EBSD) to deduce the microstructure dependent effective elastic modulus. Mean Si residual stress increased with the out-of-plane effective elastic modulus of Cu, which varies by a factor of 2 with the grain structure, and the microstructural influence diminishes with increasing distance from the TSV. Together, these findings provide direct experimental evidence linking copper microstructure to the residual stress within the Si near a TSV, an effect that becomes increasingly prominent with the continued TSV scaling.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70600","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible and Transparent Ga2O3/NiO Photovoltaic Diode for Full-Wave Rectification in Wearable Optoelectronics","authors":"Sourov Hossain,&nbsp;Sanh Vo Thi,&nbsp;Md Arifur Rahman Barno,&nbsp;Seunghee Cho,&nbsp;Vivek Mohan More,&nbsp;Malkeshkumar Patel,&nbsp;Kibum Lee,&nbsp;Joondong Kim","doi":"10.1002/aelm.70587","DOIUrl":"10.1002/aelm.70587","url":null,"abstract":"<p>Flexible and transparent electronic components are critical for next-generation wearable optoelectronic devices, which require lightweight, flexible, and optically transparent power solutions. Wearable systems, including smart textiles, flexible displays, and bioelectronics, commonly operate using direct current (DC). While transparent photovoltaics can directly generate DC power under illumination, triboelectric and piezoelectric nanogenerators produce alternating current (AC), requiring efficient AC-to-DC conversion for practical use. However, conventional silicon-based rectifiers are unsuitable for flexible transparent electronics because of their rigidity and opacity. This study presents a flexible and transparent Ga₂O₃/NiO heterojunction photovoltaic diode array functioning as a full-wave rectifier for wearable optoelectronic applications. The sputter-deposited device exhibits 65% optical transparency in the visible region, a low leakage current of 1.07 nA, and a rectification ratio of 8.505 × 10³ at ± 2 V. Under ultraviolet-C (UVC) illumination, the device demonstrates photovoltaic energy harvesting with an open-circuit voltage of 462 mV and a short-circuit current density of 103.08 µA cm⁻². It also shows self-powered photodetection performance with a responsivity of 13 mA W⁻¹ and a detectivity of 2.43 × 10¹¹ Jones. Integration into a full-wave rectifier successfully enables AC-to-DC conversion, highlighting its potential for transparent, flexible, and self-powered wearable devices.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion-Gating Reservoir Computing for Preprocessing-Free Speech Recognition from Throat Vibrations (Adv. Electron. Mater. 19/2026)","authors":"Daiki Nishioka,&nbsp;Akito Tateyama,&nbsp;Hina Kitano,&nbsp;Takashi Nakanishi,&nbsp;Kazuya Terabe,&nbsp;Takashi Tsuchiya","doi":"10.1002/aelm.70602","DOIUrl":"10.1002/aelm.70602","url":null,"abstract":"<p><b>Throat-Vibration Edge AI</b></p><p>The cover depicts a graphene-based ion-gating reservoir extracting discriminative features from throat vibrations captured by a wearable gel-electret sensor, enabling preprocessing-free, real-time spoken-digit recognition at 96.8% accuracy. See Research Article e00006 by Daiki Nishioka, Takashi Nakanishi, Takashi Tsuchiya and co-workers for more details.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70602","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149172775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Optical Functionalities in Memristors","authors":"Isabel Tenreiro,&nbsp;Víctor Rouco,&nbsp;Mariona Cabero,&nbsp;Henry Navarro,&nbsp;Javier del Valle,&nbsp;Iván K. Schuller,&nbsp;Alberto Rivera-Calzada","doi":"10.1002/aelm.202500771","DOIUrl":"10.1002/aelm.202500771","url":null,"abstract":"<p>We present an electronic memristor with expanded optical functionalities enabled by integrating an ultrathin 3 nm cadmium sulfide (CdS) film as a tunnel junction barrier with a La_0.7Sr_0.3MnO₃ (LSMO) bottom electrode. A transparent In₂O₃:SnO₂ (90:10) (ITO) upper electrode provides direct optical access to the junction area. In the dark, the device exhibits non-volatile electrical resistive switching with robust intermediate states. When illuminated with UV light (3.3 eV) between 50 and 150 K, the resistive switching remains unchanged; however, a photovoltaic response emerges, correlating linearly -via the open circuit voltage V_oc- with the resistance of each intermediate state. This behavior enables electro-optical sensing of each state. In contrast, at 10 K, photogenerated carriers enter a high injection regime and modify the device's electrical behavior in the dark, leading to a volatile suppression of the high-resistance states as illumination power reaches 26 mW cm⁻². The equilibrium dark resistance of the memristor states is restored upon removing illumination, with long characteristic recovery times (∼100 s). This slow response can be leveraged in very high-resistance states of 30 GΩ to induce voltage accumulation through low-intensity UV pulses of 0.13 mW cm⁻². Integrating these innovative optoelectronic functionalities, photovoltaic sensing and hybrid electro-optical voltage accumulation, into memristive devices opens exciting possibilities for the development of advanced bioinspired computing architectures.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500771","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}