Advanced Electronic Materials最新文献_第2页

Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor 栅极全环晶体管先进Si/SiGe堆叠中蚀刻诱导非均匀应变的直接观察

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202400943

Lan Li, Ran Bi, Xiaomei Li, Zuoyuan Dong, Chao Yan, Shuying Wang, Pengpeng Ren, Ming Li, Xing Wu

{"title":"Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor","authors":"Lan Li, Ran Bi, Xiaomei Li, Zuoyuan Dong, Chao Yan, Shuying Wang, Pengpeng Ren, Ming Li, Xing Wu","doi":"10.1002/aelm.202400943","DOIUrl":"https://doi.org/10.1002/aelm.202400943","url":null,"abstract":"The gate‐all‐around field‐effect transistor (GAAFET) provides enhanced electrostatic control and improved current driving capabilities, positioning it as a promising candidate for fin field‐effect transistor (FinFET). However, the SiGe selective etching process‐induced strain affects the current transportation property along the channel, while the morphology and strain profiles at atomistic scale remain unclear. In this study, the anisotropic etching of the Si/SiGe stack and the selective isotropic etching of the SiGe process is carried out. It is discovered that uneven etching rates in lateral and vertical dimensions of the stack induce non‐uniform etching depth within the SiGe layer. High‐resolution high‐angle annular dark‐field (HAADF) imaging in scanning transmission electron microscopy (STEM) with strain analysis technique shows that the strain profile in the Si stack is inhomogeneous, and the bottom layer of the nanosheet suffers the highest strain. Technology computer‐aided design (TCAD) simulation results at the device level indicate that such inhomogeneous strain profiles reduce the drain current. The findings provide direct proof at the atomistic scale for high‐performance manufacturing of advanced GAAFET.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator 用于下一代硅上绝缘体的热传导性埋地氮化铝

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202500175

Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel

引用次数: 0

Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes 基于氧化锌纳米隙肖特基二极管的算术逻辑单元电路

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202400940

Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama

{"title":"Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes","authors":"Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama","doi":"10.1002/aelm.202400940","DOIUrl":"https://doi.org/10.1002/aelm.202400940","url":null,"abstract":"The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem. However, the reported studies on diodes based on 2D and metal‐oxide semiconductors for digital circuits are limited to basic logic gates. The Schottky diodes‐based integrated circuit feasibility and scalability discussions are lacking. In this work, the large throughput and cost‐effective adhesion lithography in tandem with the solution‐based method is used to fabricate integrated functional circuits for Arithmetic Logic Unit (ALU). The self‐aligned nanogap separation between interdigitated coplanar aluminum (Al) and gold (Au) electrodes is uniform throughout the fabricated diode width, resulting in a high rectification ratio of 5 × 106. The fundamental logic AND, OR, and XOR gates based on nanogap Schottky diodes are fabricated, from which arbitrary logic and arithmetic functional circuits can be constructed. To demonstrate the large‐area integration, a 3‐bit Binary Shifter circuit is implemented. The measurement‐based Keysight ADS diode model is used to design a complete 4‐bit ALU circuit. The excellent circuit‐level performance, large‐area scalability, design flexibility, and cost‐efficiency of logic circuits based on nanogap Schottky diodes make them promising candidates for future Internet of Things applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inkjet Printable Semiconducting Inks for Enhancement‐Mode Organic Electrochemical Transistors 用于增强型有机电化学晶体管的可喷墨打印半导体油墨

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202500123

Alan Eduardo Avila Ramirez, Shofarul Wustoni, Yizhou Zhong, Abdulelah Saleh, Prem D. Nayak, Jokubas Surgailis, Tania Cecilia Hidalgo Castillo, Sahika Inal

{"title":"Inkjet Printable Semiconducting Inks for Enhancement‐Mode Organic Electrochemical Transistors","authors":"Alan Eduardo Avila Ramirez, Shofarul Wustoni, Yizhou Zhong, Abdulelah Saleh, Prem D. Nayak, Jokubas Surgailis, Tania Cecilia Hidalgo Castillo, Sahika Inal","doi":"10.1002/aelm.202500123","DOIUrl":"https://doi.org/10.1002/aelm.202500123","url":null,"abstract":"Additive manufacturing technologies offer a promising avenue for advancing the microfabrication of organic electronic devices. In this study, inkjet printable semiconducting inks derived from commercially available p‐type and n‐type conjugated polymers, namely poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and poly(benzimidazobenzophenanthroline) (BBL) are developed. These inks are used to fabricate organic electrochemical transistor (OECT) channels at a deposition resolution of 20 µm with high electrochemical stability under prolonged biasing stress. The versatility of the inks is demonstrated through the fabrication of OECTs on various substrates, including glass, polyimide, and paper, and in one example, all device components are printed exclusively from PEDOT:PSS. The de‐doped PEDOT:PSS channel is integrated with a BBL channel, constructing printed monolithic electrochemical complementary amplifiers performing as a NOT logic gate. Furthermore, The applicability of the PEDOT: PSS‐based enhancement mode device operation in electrochemical sensing, achieving high sensitivity to physiologically relevant concentrations of ascorbic acid is showcased. This work aligns with the objective of democratizing access to advanced electronic materials and devices, facilitating fabrication processes without the need for scarce materials, expensive equipment, or specialized facilities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"109 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching Mn3O4纳米线网络器件的量子化电导和多电平存储操作与低压操作和氧空位感应电阻开关相结合

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202500159

Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar

{"title":"Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching","authors":"Keval Hadiyal, Ramakrishnan Ganesan, R. Thamankar","doi":"10.1002/aelm.202500159","DOIUrl":"https://doi.org/10.1002/aelm.202500159","url":null,"abstract":"Quantum effects in nanowires and nanodevices can potentially revolutionize the device concepts with multi‐functionalities for future technologies. Memristive devices which undergo transition from high resistance state to low resistance state involve nanoscale conduction paths can show quantum effects at room temperature. Here, Mn3O4 nanowires based memristor showing very reliable resistive switching at very low voltages and with ON/OFF States ratio ∼ 103 is reported. The switching device can also be programmed to multiple memory states (up to 16 states ∼ 24). Since the conduction paths are geometrically constrained along the nanowires, quantized conductance steps are observed. Step‐wise conductance jumps are observed during the SET and RESET process with better control along RESET process. Conductance jumps range between 1 and 9 G0. The nanowire devices show very consistent resistive switching up to 100 °C. These measurements confirm extremely stable nanowire based resistive switching devices which can be used for next‐generation memories showing quantum effects in neuromorphic computing architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition 通过原子层沉积的超高迁移率原子有序InGaZnO晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-14 DOI: 10.1002/aelm.202500137

Yoon‐Seo Kim, Hyeon Woo Kim, Taewon Hwang, Jinho Ahn, Sung Beom Cho, Jin‐Seong Park

{"title":"Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition","authors":"Yoon‐Seo Kim, Hyeon Woo Kim, Taewon Hwang, Jinho Ahn, Sung Beom Cho, Jin‐Seong Park","doi":"10.1002/aelm.202500137","DOIUrl":"https://doi.org/10.1002/aelm.202500137","url":null,"abstract":"Owing to the challenges of downsizing and reducing power consumption in the semiconductor industry, oxide semiconductors such as indium‐gallium‐zinc‐oxide (IGZO) are emerging as notable alternative materials due to their compatibility with back‐end‐of‐line processes and low leakage currents. However, enhancing electrical characteristics of oxide semiconductors to match silicon‐based channels remains crucial. In this study, atomically‐ordered (AO) IGZO is first synthesized using plasma‐enhanced atomic layer deposition, resulting in a transistor with a field‐effect mobility of 245 cm2 Vs−1 and excellent switching properties (threshold voltage = 0.17 V, subthreshold swing <75 mV dec−1) in a low thermal budget process (below 250 °C). Theoretical and experimental studies revealed that the ultra‐high mobility originates from the carrier quantum confinement induced by the multi‐quantum well structure of AO‐IGZO. Our approach highlights the potential of oxide semiconductors to surpass limitations of silicon‐based technology limitations, thereby paving the way for next‐generation channel materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear Optical Imaging of Entangled Heterophase Polydomains in Ferroelectric BZT Films 铁电BZT薄膜中纠缠异相多畴的非线性光学成像

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-10 DOI: 10.1002/aelm.202500278

Piyali Maity, Hongbo Chen, Jun Ouyang, Yuhang Ren

{"title":"Nonlinear Optical Imaging of Entangled Heterophase Polydomains in Ferroelectric BZT Films","authors":"Piyali Maity, Hongbo Chen, Jun Ouyang, Yuhang Ren","doi":"10.1002/aelm.202500278","DOIUrl":"https://doi.org/10.1002/aelm.202500278","url":null,"abstract":"Quantitative evaluation of multi‐phase evolution and domain characteristics in ferroelectric thin films is essential for understanding device engineering and underlying physical mechanisms. However, extracting local strain distribution and defects remains challenging with conventional techniques. Here, the azimuth‐ and polarization‐dependent second harmonic generation (SHG) approach for distinguishing the tetragonal and rhombohedral domain variants in ferroelectric BaZr0.2Ti0.8O3 (BZT) films is presented. It is demonstrated that strain from the LaAlO3 (LAO) substrates breaks the in‐plane symmetry of BZT thin films, significantly altering their second‐order nonlinear susceptibility. Variations in SHG intensity and susceptibility characterize and spatially map polymorphic nanodomains and internal elastic strain fields within the BZT/LAO heterostructure. It is shown that the competition between tetragonal and rhombohedral phases gives rise to anisotropic nanodomains with complex elastic and electric fields. The SHG imaging spectroscopy is well‐suited for understanding microstructural variations in ferroelectrics, which are directly relevant to device performance in memory and energy storage applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"200 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144603682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing 采用喷墨打印技术制备具有近红外探测功能的半透明有机光电二极管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-09 DOI: 10.1002/aelm.202500274

Luis Arturo Ruiz‐Preciado, Peter Krebsbach, Mervin Seiberlich, Gerardo Hernandez‐Sosa

{"title":"Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing","authors":"Luis Arturo Ruiz‐Preciado, Peter Krebsbach, Mervin Seiberlich, Gerardo Hernandez‐Sosa","doi":"10.1002/aelm.202500274","DOIUrl":"https://doi.org/10.1002/aelm.202500274","url":null,"abstract":"Transparent organic photodetectors are promising for applications in wearable and communication electronics, where they can serve as imperceptible sensors. Yet, common fabrication techniques such as spin coating and evaporation have limited compatibility with high‐throughput production and scalability. In this work, semi‐transparent and opaque organic photodiodes, inkjet‐printed on indium tin oxide electrodes, reaching a transmittance of up to 70.6% in the visible range are demonstrated. The diode's active layer comprises a transparent donor polymer and Y7 as a non‐fullerene acceptor. This bulk heterojunction results in near‐infrared responsivity with maximum values of 12 ± 2 mA W−1 at −2 V and 840 nm for semi‐transparent diodes with Poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate electrodes and 60 ± 7 mA W−1 for opaque devices with Ag electrodes. The diodes exhibit high detection speeds of up to 3 MHz, making them suitable for near‐infrared communication systems for soft robotics as well as wearable health monitoring, as demonstrated by pulse plethysmography.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144594003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen Defects and Instability in Very Thin a-IGZO TFTs 超薄a-IGZO tft中的氧缺陷和不稳定性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-07 DOI: 10.1002/aelm.202500349

Hanjun Cho, Masatake Tsuji, Shigenori Ueda, Junghwan Kim, Hideo Hosono

{"title":"Oxygen Defects and Instability in Very Thin a-IGZO TFTs","authors":"Hanjun Cho, Masatake Tsuji, Shigenori Ueda, Junghwan Kim, Hideo Hosono","doi":"10.1002/aelm.202500349","DOIUrl":"https://doi.org/10.1002/aelm.202500349","url":null,"abstract":"Amorphous oxide semiconductor (AOS) thin-film transistors (TFT) have gained significant attention for their potential in capacitor-free next-generation memory applications. However, improving threshold voltage (VTH) stability and precisely controlling carrier concentration in ultra-thin channels remain critical challenges. In this study, an extraordinarily large positive-bias-stress (PBS) instability in hydrogen-free amorphous IGZO (a-IGZO)-TFTs that emerges as the channel thickness decreases is reported. This instability can be attributed to acceptors interacting with donors at shallow levels below the conduction band minimum (CBM). This model, based on temperature-dependent Hall effect measurements, reveals an unusual correlation between donor concentration and donor energy levels. Unlike in previously reported semiconductors, the energy difference between the CBM and donor energy level increases linearly in proportion to (donor concentration)1/3. The O 1s core-level hard X-ray photoemission measurements suggest that the entity of the acceptors is oxygen vacancies without two electrons (VO2+) formed during deposition. These vacancies result from strong donor−acceptor interactions arising from the formation of oxygen Frenkel defects in the thinner films. It is demonstrated that low-temperature extra-annealing effectively suppresses PBS instability by inducing structural relaxation of the Frenkel defects, thereby stabilizing the TFTs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144678309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Copper Tin Halide p-Type TFT Enabled Solution Processed Monolithic 3D CMOS Circuits 铜锡卤化p型TFT使能解决方案处理单片3D CMOS电路

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-07-07 DOI: 10.1002/aelm.202500246

Yutong Liu, Yang Yu, Tianzhi Li, Jiaru Zhang, Yihong Hu, Baoyue Zhang, Ranjith R. Unnithan, Efstratios Skafidas

{"title":"Copper Tin Halide p-Type TFT Enabled Solution Processed Monolithic 3D CMOS Circuits","authors":"Yutong Liu, Yang Yu, Tianzhi Li, Jiaru Zhang, Yihong Hu, Baoyue Zhang, Ranjith R. Unnithan, Efstratios Skafidas","doi":"10.1002/aelm.202500246","DOIUrl":"https://doi.org/10.1002/aelm.202500246","url":null,"abstract":"A critical requirement for low-power microelectronics is the construction of logic circuits using complementary devices. In pursuit of low-power solution-processed thin film Complementary Metal Oxide Semiconductor (CMOS) circuits, significant research is expended toward producing the elusive p-type transistors. Beyond the challenges associated with processability and formulation complexity of existing metal halide solutions, they critically do not attain the electrical properties required to build productive devices. For the first time, this work describes high-performance solution-processed p-type thin film transistors developed using copper tin halide. Incorporating tin and high electronegativity halide species (Cl-/F-) improves CuI film morphology, stability, and electrical properties through copper/tin vacancy suppression, which results in high mobility, over 20 cm2 Vs−1, and low operating voltage Thin Film Transistors (TFTs). Furthermore, the p-type TFTs are able to be integrated with fully solution-processed n-type Indium Gallium Zinc Oxide (IGZO) TFTs in a highly transparent multilayer stack architecture. The monolithic 3D (M3D) CMOS design records inverter gains of 20 at VDD = 3V, demonstrating p-type devices fabricated using solution processing have the requisite high performance required for productive solution-processed multilayer microelectronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144678300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0