Advanced Electronic Materials最新文献_第2页

Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-15 DOI: 10.1002/aelm.202400792

Tiziano Di Giulio, Maria Antonieta Ramírez-Morales, Valentina Mastronardi, Giuseppe Mele, Rosaria Brescia, Pier Paolo Pompa, Cosimino Malitesta, Giuseppe Egidio De Benedetto, Mauro Moglianetti, Maria Ada Malvindi, Elisabetta Mazzotta

{"title":"Electrochemical Determination of Gallic Acid in Tea Samples Using Pyramidal Pt Nanoparticles","authors":"Tiziano Di Giulio, Maria Antonieta Ramírez-Morales, Valentina Mastronardi, Giuseppe Mele, Rosaria Brescia, Pier Paolo Pompa, Cosimino Malitesta, Giuseppe Egidio De Benedetto, Mauro Moglianetti, Maria Ada Malvindi, Elisabetta Mazzotta","doi":"10.1002/aelm.202400792","DOIUrl":"https://doi.org/10.1002/aelm.202400792","url":null,"abstract":"Gallic acid (GA) is a natural phenolic compound with significant biological properties, including anti-inflammatory, antioxidant, and anticancer effects. Detecting GA in biological matrices like food and beverages is essential but challenging due to the multitude of GA-like molecules with similar proprieties and functional moieties. In this study, ultra-small (≈4 nm) pyramidal platinum nanoparticles (PtNPs) with a high fraction of {111} surface domains are used to design a new electrochemical sensor for GA detection in tea, which is the most popular manufactured drink consumed in the world. PtNPs are deposited on a glassy carbon electrode (GCE) using a simple drop deposition method, requiring a minimal amount of nanoparticles and, hence, metal precursor. With just 2.7 µg of PtNPs, the sensor demonstrated a linear response in the concentration range from 50 to 600 µm, a detection limit of 16 µm, and a quantification limit of 49 µm. The sensor selectivity is tested against other antioxidant compounds commonly present in tea, consistently showing a higher response for GA. Furthermore, the sensor capability to detect GA in real green and black tea samples is further validated by high-performance liquid chromatography (HPLC) analysis, with high correlation between chromatographic data and sensor response.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-13 DOI: 10.1002/aelm.202400717

Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani

{"title":"Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks","authors":"Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani","doi":"10.1002/aelm.202400717","DOIUrl":"https://doi.org/10.1002/aelm.202400717","url":null,"abstract":"The advent of neuromorphic substrates is promoting the development of in materia autonomous and adaptive devices, employed as hardware solutions to reduce the current inefficiencies of traditional data processing techniques, in terms of energy requirements. The integration of data processing capabilities on soft materials is here focused on the development of the edge computing paradigm of interest for soft robotics and wearable devices. For such purposes, gold nanostructured complex networks produced in the gas phase are employed to fabricate neuromorphic devices. The integration of the latter on a soft Polydimethylsiloxane (PDMS) substrate equipped with stretchable laser-induced graphene electrodes, is exploited for the production of in materia devices to bridge the gap between data processing and interaction with the environment. The description and the control of the non-linear, resistive switching electrical properties are demonstrated by the development of soft mechano-responsive electronic switches and soft reconfigurable logic gates. These preserve Boolean functions classifications even under small mechanical perturbations, thanks to the redundant and adaptive connectivity of the gold networks. These results constitute a promising starting point for a fruitful combination of physical and computing intelligence directly integrated on soft systems to efficiently interact with the surrounding scenario.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"117 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142820909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin-Film Assisted Laser Transfer and Bonding (TFA-LTAB) for the Fabrication of Micro-LED Displays

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400380

Taifu Lang, Xin Lin, Xiaowei Huang, Yujie Xie, Shuangjia Bai, Yijian Zhou, Shuaishuai Wang, Yu Lu, Xuehuang Tang, Chang Lin, Zhonghang Huang, Kaixin Zhang, Qun Yan, Jie Sun

{"title":"Thin-Film Assisted Laser Transfer and Bonding (TFA-LTAB) for the Fabrication of Micro-LED Displays","authors":"Taifu Lang, Xin Lin, Xiaowei Huang, Yujie Xie, Shuangjia Bai, Yijian Zhou, Shuaishuai Wang, Yu Lu, Xuehuang Tang, Chang Lin, Zhonghang Huang, Kaixin Zhang, Qun Yan, Jie Sun","doi":"10.1002/aelm.202400380","DOIUrl":"https://doi.org/10.1002/aelm.202400380","url":null,"abstract":"Micro-Light Emitting Diodes (Micro-LEDs) are key components in the field of next-generation display technologies. In the process of making Micro-LED displays, millions of chips need to be transferred to the driver substrate using mass transfer technology. Conventional transfer techniques, such as stamp transfer, present challenges in terms of processing efficiency and applicability due to the need for pre-prepared tethered structures and fixed chip pitch. To overcome these limitations, the t hin-film-assisted laser transfer and bonding (TFA-LTAB) technology is proposed. This technique is able to efficiently and accurately transfer Micro-LEDs from the source substrate to the driver substrate with arbitrary pitch through thin-film assistance, and electrically connects the chips through flip-chip bonding technology, which significantly improves the efficiency and reliability of the transfer and joining. The TFA-LTAB method proposed in this study integrates laser transfer and flip-chip bonding techniques. Through the TFA-LTAB process, these Micro-LEDs cultured on sapphire substrates are precisely assembled onto transparent low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The method successfully achieved mass transfer and bonding of Micro-LEDs with a size of 30 × 15 µm2 at low temperature (180 °C) and low pressure (0.08 MPa).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142815952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric-Double-Layer Gating

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400811

Jaehyeok Lee, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, Kookrin Char

引用次数: 0

Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400648

Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay-Rong Chang, Pan He, Jian Shen

{"title":"Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor","authors":"Hao Liu, Ting Yong Lim, Shijia Tian, Jinfeng Zhai, Du Xiang, Tao Liu, Tay-Rong Chang, Pan He, Jian Shen","doi":"10.1002/aelm.202400648","DOIUrl":"https://doi.org/10.1002/aelm.202400648","url":null,"abstract":"Conventional diode-based rectifiers suffer from limited applicability in low-power electronics and high-frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non-centrosymmetric quantum materials can enable diode-free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low-power and high-frequency applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142809717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-12 DOI: 10.1002/aelm.202400558

Zi-hao Dong, Qi-hang Zhang, Kai Liu, Shao-jie Fu, Xu-Hao Hong, Qian-jin Wang, Yan-qing Lu, Yong-yuan Zhu, Xue-jin Zhang

引用次数: 0

Short‐Term and Long‐Term Memory Functionality of a Brain‐Like Device Built from Nanoparticle Atomic Switch Networks (Adv. Electron. Mater. 12/2024)

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-11 DOI: 10.1002/aelm.202470039

Oradee Srikimkaew, Saman Azhari, Deep Banerjee, Yuki Usami, Hirofumi Tanaka

引用次数: 0

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202400665

Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang

{"title":"Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond","authors":"Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang","doi":"10.1002/aelm.202400665","DOIUrl":"https://doi.org/10.1002/aelm.202400665","url":null,"abstract":"The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide-based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post-treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector-only memory (SOM) is examined, which offers better scalability and performance than the existing one-memory and one-selector structure, which combines an OTS with phase-change memory. Moreover, a cost-effective 3D vertical X-point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Masthead: (Adv. Electron. Mater. 12/2024)

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202470040

引用次数: 0

Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2024-12-10 DOI: 10.1002/aelm.202400471

Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai

{"title":"Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals","authors":"Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai","doi":"10.1002/aelm.202400471","DOIUrl":"https://doi.org/10.1002/aelm.202400471","url":null,"abstract":"The bulk photovoltaic effect (BPVE) provides a theory of surpassing the Schockley–Queisser limit. However, improving the BPVE efficiency to a level comparable to that of the semiconductor-based efficiencies is challenging in practice due to conflicting material design requirements. Previous works have shown that a stacked domain structure in a rhombohedral BiFeO3 ferroelectric epitaxial thin film is able to satisfy the criteria of both a small mean free path for an optimized photocurrent and a large distance between electrodes for an optimized photovoltage. Nevertheless, this hypothesis has remained difficult to verify with other materials due to the complication of domain wall manipulation. This work takes advantage of the recent advances in controlling the domain structure in rhombohedral Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals via AC poling. By comparing the photovoltage and photocurrent values after domain manipulations in four types of commercial PMN-PT samples, this work validates the hypothesis of the stacked domain structure enhancing the BPVE by witnessing a simultaneous increase of over 35% for both the open-circuit voltage and short-circuit current from DC to the AC-poled states under a 405 nm laser illumination. This result paves the way for further improving the BPVE efficiency in ferroelectrics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0