Advanced Electronic Materials最新文献_第2页

Double‐Sided Conformable Piezoelectric Force Sensor with Enhanced Performance and Bending Correction

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-24 DOI: 10.1002/aelm.202400456

Joseph Faudou, Mohammed Benwadih, Abdelkader Aliane, Christine Revenant, Daniel Grinberg, Minh‐Quyen Le, Pierre‐Jean Cottinet

{"title":"Double‐Sided Conformable Piezoelectric Force Sensor with Enhanced Performance and Bending Correction","authors":"Joseph Faudou, Mohammed Benwadih, Abdelkader Aliane, Christine Revenant, Daniel Grinberg, Minh‐Quyen Le, Pierre‐Jean Cottinet","doi":"10.1002/aelm.202400456","DOIUrl":"https://doi.org/10.1002/aelm.202400456","url":null,"abstract":"Flexible piezoelectric devices have gained considerable interest due to their potential for new applications, particularly in wearable technology. However, a significant challenge remains in measuring low forces on nonplanar and deformable surfaces. Indeed, conformability on complex surfaces induces bending stresses in the piezoelectric sensors, interfering with the measurement of compressive force. Yet such measurements can be valuable, especially in medical applications that involve assessing forces on soft tissues. This study presents an innovative highly sensitive conformable sensor based on a thin film of P(VDF‐TrFE) copolymer. The selection of the substrate is essential for ensuring the device's conformability, but it is also demonstrated that it can provide a substantial improvement in performance if its Young's modulus is lower than that of the active polymer. The effective piezoelectric charge coefficient of a sensor on TPU substrate is measured equal to −340 pC.N−1, representing a tenfold increase in the theoretical compression sensitivity of P(VDF‐TrFE). Additionally, a double‐sided structure to eliminate the contribution of bending in the piezoelectric signal and tackle the challenge of conformability on complex surfaces is developed. Overall, the proposed device shows promising results for measuring low forces applied to soft biological tissues such as skin or heart valve leaflets.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-23 DOI: 10.1002/aelm.202400810

Lauren R. Miller, Alejandro Galán‐González, Ben Nicholson, Leon Bowen, Guillaume Monier, Robert J. Borthwick, Freddie White, Mana Saeed, Richard L. Thompson, Christine Robert‐Goumet, Del Atkinson, Dagou A. Zeze, Mujeeb U. Chaudhry

{"title":"Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection","authors":"Lauren R. Miller, Alejandro Galán‐González, Ben Nicholson, Leon Bowen, Guillaume Monier, Robert J. Borthwick, Freddie White, Mana Saeed, Richard L. Thompson, Christine Robert‐Goumet, Del Atkinson, Dagou A. Zeze, Mujeeb U. Chaudhry","doi":"10.1002/aelm.202400810","DOIUrl":"https://doi.org/10.1002/aelm.202400810","url":null,"abstract":"A breakthrough in the fabrication of amorphous Zn‐Sn‐O (ZTO)‐based thin‐film transistors (TFTs) is presented for volatile organic compound (VOC) detection. The incorporation of highly abundant materials offers substantial economic and environmental benefits. However, analyses for the design of a multilayer channel are still limited. This work demonstrates that the chemical environment influences ZTO‐based TFTs' carrier transport properties and can be tailored for detecting specific VOCs, ensuring high specificity in diagnosing life‐threatening conditions through simple breath analysis. A low‐cost, high‐throughput, fully solution‐processed ZTO and ZnO multilayering strategy is adopted. The in‐depth compositional and morphological analyses reveal that low surface roughness, excellent Zn and Sn intermixing, high oxygen vacancy (31.2%), and M‐OH bonding (11.4%) contents may account for the outstanding electrical and sensing performance of ZTO‐ZTO TFTs. Notably, these TFTs achieve near‐zero threshold voltage (2.20 V), excellent switching properties (107), and high mobility (10 cm2V−1s−1). This results in high responsivity to alcohol vapors at low‐voltage operation with peak responsivity for methanol (R = 1.08 × 106) over two orders of magnitude greater than acetone. When miniaturized, these devices serve as easy‐to‐operate sensors, capable of detecting VOCs with high specificity in ambient conditions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Efficiency PbS Quantum Dots Infrared Solar Cells via Numerical Simulation and Experimental Optimization 高效PbS量子点红外太阳能电池的数值模拟与实验优化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-22 DOI: 10.1002/aelm.202400784

Taiming Ji, Zhixu Wu, Pengfei Xiang, Yu Lu, Sisi Liu, Rongxin Tang, Yuhao Wang, Yong Xia

{"title":"High-Efficiency PbS Quantum Dots Infrared Solar Cells via Numerical Simulation and Experimental Optimization","authors":"Taiming Ji, Zhixu Wu, Pengfei Xiang, Yu Lu, Sisi Liu, Rongxin Tang, Yuhao Wang, Yong Xia","doi":"10.1002/aelm.202400784","DOIUrl":"https://doi.org/10.1002/aelm.202400784","url":null,"abstract":"Low-bandgap lead sulfide quantum dots (PbS QDs) can efficiently harness the infrared (IR) light in the solar spectrum beyond 1100 nm, showing great application potential in the bottom subcells of tandem solar cells. However, achieving further efficiency improvements in PbS QDs IR solar cells still faces many challenges. In this work, the effects of the absorber layer thickness, the carrier mobility in the absorber layer, the defect density in the absorber layer and at the absorber/electron transfer layer (ETL) interface, and the doping density of the ETL and hole transfer layer (HTL) on the performance of PbS QDs (≈0.95 eV) IR solar cells are systematically investigated through SCAPS-1D simulation. A theoretical efficiency of 16.95% and 2.15% is calculated for PbS QDs IR solar cells under AM 1.5 and 1100 nm-filtered illumination, respectively. Based on the simulation results, the corresponding PbS QDs IR solar cells are fabricated with an efficiency of 11.53% under AM 1.5 illumination, a remarkable 1100 nm-filtered efficiency of 1.30%, and a high external quantum efficiency of 70.50% at 1290 nm. Hence, these findings will accelerate the optimization of the performance of PbS QDs IR solar cells approaching their theoretical efficiency limit.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrathin High-Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface-Grafted Poly(methacrylic acid) Matrix 在表面接枝聚甲基丙烯酸基体上制备超薄高效齐纳二极管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-17 DOI: 10.1002/aelm.202400772

Wojciech Wieczorek, Tomasz Mazur, Weronika Górka-Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński

引用次数: 0

Electronic CPA‐Laser Having Enhanced Sensitivity and Tunability 具有增强灵敏度和可调性的电子CPA激光器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-16 DOI: 10.1002/aelm.202400722

Minye Yang, Lukang Wang, Zhilu Ye, Qi Zhong, Baolong Jian, Xiaohui Zhang, Şahin K. Özdemir, Ming Liu

{"title":"Electronic CPA‐Laser Having Enhanced Sensitivity and Tunability","authors":"Minye Yang, Lukang Wang, Zhilu Ye, Qi Zhong, Baolong Jian, Xiaohui Zhang, Şahin K. Özdemir, Ming Liu","doi":"10.1002/aelm.202400722","DOIUrl":"https://doi.org/10.1002/aelm.202400722","url":null,"abstract":"Exceptional point degeneracies, which are spectral singularities of non‐Hermitian systems, have been widely utilized for building optical, mechanical, or electrical sensing systems with much larger responses than those utilizing Hermitian degeneracies. However, such systems suffer from enhanced noise, which negates the enhanced response and thus does not provide any improvement in signal‐to‐noise ratio. Recently, the coherent perfect absorber (CPA)‐laser, which also utilizes non‐Hermitian singularity, has been used in sensing systems resulting in better noise robustness and enhanced responsivity. Nonetheless, CPA‐laser (CPAL) implementation requires all system parameters to be immutable, which hinders progress toward their practical use for sensing purposes. Here, a tunable electronic CPA‐laser is reported that overcomes these obstacles providing ultrahigh sensitivity as validated in the experiments for monitoring arterial pressure and respiration. This CPAL sensing scheme utilizes inductive coupling between gain and loss sub‐components and thereby the whole system can be decomposed into an active reader and a passive sensor, which enables better tunability and performance compared to previously reported CPAL systems. Moreover, the proposed CPAL system exhibits better performance compared to exceptional point‐based systems having a similar circuit structure. This research paves the way for exploring electronic CPAL for sensing applications and may have a profound impact on the next‐generation, ultrasensitive electromagnetic sensing system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Nb-Based Semiconductor-Superconductor Hybrid 2DEG Platform 基于铌的半导体-超导混合2DEG平台的开发

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-15 DOI: 10.1002/aelm.202400687

Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider

{"title":"Development of a Nb-Based Semiconductor-Superconductor Hybrid 2DEG Platform","authors":"Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider","doi":"10.1002/aelm.202400687","DOIUrl":"https://doi.org/10.1002/aelm.202400687","url":null,"abstract":"Semiconductor-superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realized by in-situ deposition of an Al superconducting layer. Here a hybrid material is presented, based on an InAs 2D electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. The inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors is addressed by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance-Free, Voltage-Regulated Multi-Bit Memristors 免合规、稳压多位记忆电阻器用可持续氧化铝薄膜的溶液剪切

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-15 DOI: 10.1002/aelm.202400698

Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska-Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld

{"title":"Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance-Free, Voltage-Regulated Multi-Bit Memristors","authors":"Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska-Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202400698","DOIUrl":"https://doi.org/10.1002/aelm.202400698","url":null,"abstract":"In this work, solution shearing approach is used to fabricate sustainable, de-ionized water based 15 nm aluminum oxide (AlOx) thin films employing a combination of low-temperature thermal annealing and deep UV exposure techniques. Their electrical performance is evaluated for memristive technology, demonstrating bipolar resistive switching and a stable ON/OFF ratio of ≈102. Devices exhibit endurance for 100 cycles and retention exceeding 40 h. Moreover, the device showcases eight voltage-regulated resistive switching states, equivalent to 4 bits. All multilevel states exhibit a significant increase in the memory window and stable retention for 3 h. This study illustrates that the resistive switching results from the conductive filament development is facilitated by oxygen vacancies. Charge conduction modeling of I–V characteristics reveals that the mechanism is dominated by space charge-limited conduction (SCLC) during filament formation, followed by Ohmic conduction. A negative differential resistance (NDR) effect occurs due to the sudden rupture of the filament when the polarity is reversed. The voltage-regulated multilevel behavior can be attributed to the enhancement of the pre-existing oxygen vacancy conductive filament or the formation of multiple filaments. Overall, the bilayer AlOx thin film demonstrates significant potential for application in multibit-level memory storage devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Layer-By-Layer Approach to Improve the Capacitance of Conducting Polymer Films 提高导电聚合物薄膜电容的逐层方法

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-15 DOI: 10.1002/aelm.202400761

Małgorzata Skorupa, Ethan Cao, Adrian Barylski, Sara Shakibania, Sandra Pluczyk-Małek, Zuzanna Siwy, Katarzyna Krukiewicz

{"title":"Layer-By-Layer Approach to Improve the Capacitance of Conducting Polymer Films","authors":"Małgorzata Skorupa, Ethan Cao, Adrian Barylski, Sara Shakibania, Sandra Pluczyk-Małek, Zuzanna Siwy, Katarzyna Krukiewicz","doi":"10.1002/aelm.202400761","DOIUrl":"https://doi.org/10.1002/aelm.202400761","url":null,"abstract":"In the pursuit of energy storage devices offering high power density, rapid charge and discharge rates, a layer-by-layer deposition approach is shown to improve the capacitive properties of conducting polymer-based devices. This work describes the synthesis and characterization of a composite material based on poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-ethylenedioxypyrrole) (PEDOP) for supercapacitor applications. PEDOT and PEDOP are sequentially electropolymerized using cyclic voltammetry to form bilayer structures, overcoming challenges associated with copolymerization. The evaluation of electrochemical performance of the PEDOT/PEDOP composite reveals superior areal capacitance (42.2 ± 2.8 mF cm−2 at the scan rate of 5 mV s−1) outperforming both homopolymers by up to 30%. Microscopic and spectroscopic surface analysis confirm the uniform coating of PEDOT/PEDOP and enhanced surface roughness resulting from the formation of 3D nanostructures, contributing to improved electrochemical performance. Further electrochemical impedance spectroscopic analysis demonstrates low charge transfer resistance (25 ± 8 Ω) and high energy density with respect to the area of the electrode (3.53 ± 0.3 µWh cm−2 at 55 µW cm−2), making PEDOT/PEDOP composite a promising material for high-performance supercapacitors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation Properties of Organic Light-Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement 用位移电流测量研究了偶极掺杂改性界面电荷密度有机发光二极管的降解特性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-15 DOI: 10.1002/aelm.202400788

Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi

{"title":"Degradation Properties of Organic Light-Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement","authors":"Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi","doi":"10.1002/aelm.202400788","DOIUrl":"https://doi.org/10.1002/aelm.202400788","url":null,"abstract":"Accumulated charges at the interfaces of organic light-emitting diodes (OLEDs) often induce exciton quenching and lead to device degradation. This work delves into the correlations of the interface charge accumulation and degradation properties of tris(8-quinolinolato)aluminum (Alq3)-based OLEDs. The interface accumulated charge density is modified by spontaneous orientation polarization (SOP) induced in the hole transport layer (HTL) by means of dipolar doping, where N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) or tris(4-carbazoyl-9-ylphenyl) amine (TCTA) is employed as a hole transport material and 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-bensimidazole) (TPBi) as a dipolar dopant. It is confirmed that NPB cation acts as an exciton quencher, but TCTA cation does not, depending on the spectral overlap of Alq3 emission and the absorption of the respective cations. On the other hand, the TCTA devices degrade much faster than the NPB devices. Moreover, the device lifetime is similar or even shorter for the doped devices despite less interface charge density. These results suggest that holes accumulated at the interface between the hole transport material and Alq3 due to SOP are not mainly involved in the degradation mechanism. Furthermore, it is found that the charge traps generated due to degradation do not act as exciton quenchers, suggesting that they rather act as nonradiative recombination centers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"75 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bandgap-Dependent Doping of Semiconducting Carbon Nanotube Networks by Proton-Coupled Electron Transfer for Stable Thermoelectrics 稳定热电体中质子耦合电子转移的半导体碳纳米管网络带隙依赖掺杂

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-01-14 DOI: 10.1002/aelm.202400817

Angus Hawkey, Xabier Rodríguez-Martínez, Sebastian Lindenthal, Moritz C. F. Jansen, Reverant Crispin, Jana Zaumseil

{"title":"Bandgap-Dependent Doping of Semiconducting Carbon Nanotube Networks by Proton-Coupled Electron Transfer for Stable Thermoelectrics","authors":"Angus Hawkey, Xabier Rodríguez-Martínez, Sebastian Lindenthal, Moritz C. F. Jansen, Reverant Crispin, Jana Zaumseil","doi":"10.1002/aelm.202400817","DOIUrl":"https://doi.org/10.1002/aelm.202400817","url":null,"abstract":"Networks of semiconducting single-walled carbon nanotubes (SWNTs) are a promising material for thermoelectric energy harvesting due to their mechanical flexibility, solution processability, high Seebeck coefficients and high electrical conductivities after chemical p- or n-doping. Here, we demonstrate that proton-coupled electron transfer (PCET) with benzoquinone (BQ) as the oxidant and lithium bis(trifluoromethylsulfonyl)imide (Li[TFSI]) for electrolyte counterions is a highly suitable method for p-doping of polymer-sorted semiconducting SWNT networks. The achieved doping levels, as determined from absorption bleaching, depend directly on both the pH of the aqueous doping solutions and the bandgap (i.e., diameter) of the nanotubes within the network. Fast screening of different nanotube networks under various doping conditions is enabled by a high-throughput setup for thermoelectric measurements of five samples in parallel. For small-bandgap SWNTs, PCET-doping is sufficient to reach the maximum thermoelectric power factors, which are equal to those obtained by conventional methods. In contrast to other doping methods, the electrical conductivity of PCET-doped SWNTs remains stable over at least 5 days in air. These results confirm PCET to be a suitable approach for more environmentally friendly and stable doping of semiconducting SWNTs as promising thermoelectric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0