Advanced Electronic Materials最新文献

{"title":"Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics","authors":"Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, J. W. List-Kratochvil","doi":"10.1002/aelm.202400915","DOIUrl":"https://doi.org/10.1002/aelm.202400915","url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2024</b> 2400522</p>\u0000<p>DOI: 10.1002/aelm.202400522</p>\u0000<p>The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.</p>\u0000<p>Corrected Figure 4:</p>\u0000<p><img alt=\"image\" loading=\"lazy\" src=\"/cms/asset/61244c10-75b8-426b-956f-979256426b78/aelm1088-gra-0001.png\"/></p>\u0000<p>Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.</p>\u0000<p>Corrected Text:</p>\u0000<p>A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10⁻⁴ Ω cm to (19.17 ± 0.04) × 10⁻⁴ Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10⁻⁴ Ω cm at 130 °C to (25.79 ± 0.4) ×10⁻⁴ Ω cm at 170 °C.</p>\u0000<p>The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10⁻⁴ Ω cm) and 300 W for 15 min (33.68 × 10⁻⁴ Ω cm).</p>\u0000<p>Corrected Figure 7:</p>\u0000<p><img alt=\"image\" loading=\"lazy\" src=\"/cms/asset/5e41730f-bd8e-40d3-b910-90fe0f3facef/aelm1088-gra-0002.png\"/></p>\u0000<p>Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143084126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Soft and Stretchable Thienopyrroledione-Based Polymers via Direct Arylation","authors":"Angela Lin, Lorenzo Guio, Garrett LeCroy, Stanley Lo, Adnan Sharif, Yunfei Wang, Alberto Salleo, Xiaodan Gu, Christine K. Luscombe, Helen Tran","doi":"10.1002/aelm.202400756","DOIUrl":"https://doi.org/10.1002/aelm.202400756","url":null,"abstract":"<i>π</i>-conjugated polymers (CPs) that are concurrently soft and stretchable are needed for deformable electronics. Molecular-level modification of indacenodithiophene (IDT) copolymers, a class of CPs that exhibit high hole mobilities (<span data-altimg=\"/cms/asset/f3aabf82-75e4-41f3-a261-603f77a3fe6c/aelm1073-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"4\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm1073-math-0001.png\"><mjx-semantics><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-role=\"greekletter\" data-semantic-speech=\"mu\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm1073:aelm1073-math-0001\" display=\"inline\" location=\"graphic/aelm1073-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><mi data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic-role=\"greekletter\" data-semantic-speech=\"mu\" data-semantic-type=\"identifier\">μ</mi>$mu $</annotation></semantics></math></mjx-assistive-mml></mjx-container>_<i>hole</i>), is an approach that can help realize intrinsically soft and stretchable CPs. Numerous examples of design strategies to adjust the stretchability of CPs exist, but imparting softness is comparatively less studied. In this study, a systematic molecular weight (MW) series is constructed on a promising candidate for soft CPs, poly(indacenodithiophene-<i>co</i>-thienopyrroledione) (p(IDT_C16-TPD_C8)), by optimizing direct arylation polymerization conditions in hopes of improving stretchability and <i>μ_hole</i> without significantly impacting softness. We found p(IDT_C16-TPD_C8) at a degree of polymerization of 32 shows high stretchability (crack onset strain, <i>CoS</i> &gt; 100%) without significantly impacting softness (elastic modulus, <i>E</i> = 32 MPa), which to the best of our knowledge outperforms previously reported stretchable and soft CPs. To further study how molecular-level modifications impact polymer properties, a MW series of a new extended donor unit polymer, poly(indacenodithienothiophene-<i>co</i>-thienopyrroledione) (p(IDTT_C16-TPD_C8)), was synthesized. The IDTT_C16 copolymers did not result in a greater average <i>μ_hole</i> when comparing between p(IDTT_C16-TPD_C8) and p(IDT_C16-TPD_C8) despite their higher crystallinity observed by GIWAXS. While these findings warrant further investigation, this study points toward unique charge transport properties of IDT-based polymers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143124526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micro-Engraving UV-Sensitive Thin-Film Transistor from Metal–Metal Oxide Nanoparticles with Band-Gap Engineering","authors":"U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk","doi":"10.1002/aelm.202400798","DOIUrl":"https://doi.org/10.1002/aelm.202400798","url":null,"abstract":"As known, n-type inorganic semiconductor nanoparticles such as zinc oxide nanoparticles have been explored in various sensing applications, which demand high-density electronic elements placement for rapid operation. Herein, high-resolution designs of conductive channels of noble metal-doped zinc oxide nanoparticles is demonstrated using an engraving transfer printing process and silver metal doping approach. Such thin-film transistors with reduced feature size to 2 µm fabricated exhibited significantly enhanced electron mobility up 3.46 × 10⁻² cm² V⁻¹ s⁻¹ and light sensitivity. Furthermore, the integration of this micropatterning technology and metal doping in thin-film transistors is utilized for control of current–voltage characteristics under the ultraviolet radiation with high sensitivity. It is suggested that this approach to design of doped inorganic nanoparticle channels paves the way for high-density thin-film transistors suitable for optoelectronic circuit, UV photodetectors and neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mobility-Lifetime Products in Organic Infrared Photodiodes with Peak Absorption at 1550 nm","authors":"Bogyeom Seo, Tyler Bills, Paramasivam Mahalingavelar, Woojo Kim, Hyeong Ju Eun, Jong H. Kim, Jason D. Azoulay, Tse Nga Ng","doi":"10.1002/aelm.202400816","DOIUrl":"https://doi.org/10.1002/aelm.202400816","url":null,"abstract":"Infrared photodiodes based on organic semiconductors are promising for low-cost sensors that operate at room temperature. However, their realization remains hampered by poor device efficiency. Here, performance limitations are analyzed by evaluating the mobility-lifetime products and charge collection efficiency of devices operating in the shortwave infrared with a peak absorption at 1550 nm. Through complementary impedance and current-voltage measurements on devices with different donor-to-acceptor semiconductor ratios, a trade-off between mobility and recombination time and the need to balance between transport and interfacial charge transfer are observed. Thus, this study revisits the mobility-lifetime metric to shed new light on charge collection constraints in organic infrared photodiodes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"123 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion Intercalation-Mediated MoS2 Conductance Switching for Highly Energy-Efficient Memristor Synapse","authors":"Bin Zhao, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Qi Li, Jiayi Sun, Tian Ouyang, Qingliang Liao, Yue Zhang","doi":"10.1002/aelm.202400633","DOIUrl":"https://doi.org/10.1002/aelm.202400633","url":null,"abstract":"Emerging memristor synapses with ion dynamics have the potential to process spatiotemporal information and can accelerate the development of energy-efficient neuromorphic computing. However, conventional ion-migration-type memristors suffer from low switching speed and uncontrollable conductance modulation, hindering energy-efficient neuromorphic hardware implementation. Here, ion intercalation-mediated conductance switching in MoS₂ is introduced for a highly energy-efficient memristor synapse (HEMS) to accurately emulate the bio-synaptic function. Li-ion intercalation into the few-layer MoS₂ can induce structural evolution, thereby achieving high-speed and controllable conductance modulation in HEMS. Consequently, the HEMS exhibits highly energy efficiency with a fast switching speed of 500 ns and low energy consumption of 2.85 fJ per synaptic event. The stable bidirectional modulation of synaptic plasticity by consecutive voltage pulses of 5000 times can be achieved in the HEMS. Besides, the HEMS is endowed with logic functions and can process multiple sets of inputs in parallel for information integration. This work offers an alternative strategy for fast-speed conductance modulation via ion intercalation to develop energy-efficient memristors in future neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid and Ultra-Sensitive SARS-CoV-2 Subgenomic RNA Detection Using Single-Molecule With a Large Transistor-SiMoT Bioelectronic Platform","authors":"Eleonora Macchia, Anna Maria D'Erchia, Mariapia Caputo, Angelica Bianco, Claudia Leoni, Francesca Intranuovo, Cecilia Scandurra, Lucia Sarcina, Cinzia Di Franco, Paolo Bollella, Gaetano Scamarcio, Luisa Torsi, Graziano Pesole","doi":"10.1002/aelm.202400908","DOIUrl":"https://doi.org/10.1002/aelm.202400908","url":null,"abstract":"The replication of Coronaviridae viruses depends on the synthesis of structural proteins expressed through the discontinuous transcription of subgenomic RNAs (sgRNAs). Thus, detecting sgRNAs, which reflect active viral replication, provides valuable insights into infection status. Current diagnostic methods, such as PCR-based assays, often involve high costs, complex equipment, and reliance on highly trained personnel. Additionally, their specificity can be compromised by technical limitations in kit design. While viral culture remains highly accurate, it is impractical for routine diagnostics. In this study, the single-molecule-with-a-large-transistor (SiMoT) technology is presented for detecting sgRNA encoding the nucleocapsid (N) protein in clinical samples. SiMoT incorporates a stable layer of complementary DNA strands on the sensing gate electrode, facilitating rapid, sensitive, and specific sgRNA detection. Among 90 tested samples, SiMoT achieved a diagnostic sensitivity of 98.0% and a specificity of 87.8%, delivering results within 30 min. This user-friendly platform requires minimal sample preparation and offers a cost-effective point-of-care (POC) diagnostic solution. With its demonstrated diagnostic accuracy and scalability, SiMoT represents a promising tool for detecting active viral replication in SARS-CoV-2 and other coronaviruses. It addresses the limitations of existing molecular and culture-based methods while enhancing accessibility to reliable diagnostics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High‐Frequency Inductors by Co‐Design Optimization of Self‐Rolled‐up Membrane Technology","authors":"Kristen Minh‐Thu Nguyen, Zhendong Yang, Allen Tsingyuan Wang, Scott Ambros Wicker, Xiuling Li","doi":"10.1002/aelm.202400639","DOIUrl":"https://doi.org/10.1002/aelm.202400639","url":null,"abstract":"Self‐rolled‐up membrane (S‐RuM) 3D microtube inductors represent a significant advancement in miniaturization for radio frequency (RF) integrated circuit applications, particularly internet‐of‐things and 5G/6G communications. These inductors have excellent high‐frequency performance due to better confinement of the magnetic field and weak dependence on substrate conductivity. However, previously reported S‐RuM inductor frequencies are limited by the crosstalk capacitance between overlapping metal strips between rolled‐up turns. This work advances S‐RuM inductor design by co‐optimizing inductance, frequency, and footprint, leading to significant reductions in crosstalk capacitance and enhancements in maximum operating frequencies. Design intricacies tailored to the unique structure of S‐RuM inductors are thoroughly addressed, particularly by mapping the angle of the rolled‐up inductor strips with respect to the number of turns. Self‐resonance frequencies as high as 40–53 GHz (instrument testing limit) are reported for 2–5 rolled‐up turns, demonstrating increases of over 15 GHz from previous S‐RuM inductors. These designs, with footprints of 0.02–0.56 mm<jats:sup>2</jats:sup> and inductances of &lt;1 nH to &gt;5 nH at GHz frequencies, demonstrated the effectiveness of co‐designing frequency, footprint, and inductance for RF inductors, openning a new paradigm for miniaturizing high‐frequency on‐chip passive electronic components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143071708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement","authors":"Minyu Li, Jun Aoyama, Koya Inayoshi, Hedong Zhang","doi":"10.1002/aelm.202400852","DOIUrl":"https://doi.org/10.1002/aelm.202400852","url":null,"abstract":"Accurate, non-invasive, and wearable measurement of arterial pressure pulse waveforms is crucial for cardiovascular healthcare, yet remains challenging due to the lack of effective sensors and mounting methods. This study introduces highly sensitive, flexible PZT piezoelectric sensors and an optimized mounting method for accurate radial pulse waveform measurement in natural wrist positions. The sensors incorporate a PZT thin film directly fabricated on a flexible substrate with easily produced parallel-plate electrodes, requiring no poling treatment. The high-quality PZT films exhibit low charge leakage, enabling measurement even at 1 Hz. To ensure comfort and accuracy, a foam pad is used for optimal sensor mounting and investigate how its stress–strain properties affect pulse detection. The optimized sensor device captures waveforms closely matching those from a high-accuracy capacitive force sensor. Despite smaller size and lower mounting load, the sensors show four times the sensitivity of polyvinylidene fluoride sensors and successfully detect age-related changes in waveforms. Additionally, a deep learning model is developed to enable calibration-free conversion of sensor signals to blood pressure (BP), achieving a mean absolute error of 5.82 and 4.60 mmHg for systolic and diastolic BP. These results highlight the potential of this technology for effective cardiovascular monitoring in daily life.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina-Inspired Vision Persistent Synapses","authors":"Jiahui Bai, Qiuyan Wang, Qiaoqiao Zheng, Dong Liu, Hongbing Zhan, Renjing Xu, Jiajie Pei","doi":"10.1002/aelm.202400760","DOIUrl":"https://doi.org/10.1002/aelm.202400760","url":null,"abstract":"The rapid advancement of neuromorphic computing and machine vision drives the need for optoelectronic memories that mimic neural and visual systems, integrating optical sensing, data storage, and processing. Traditional fabrication methods are often complex, multistep processes that struggle to achieve lightweight, scalable, and flexible designs. This limitation highlights the need for alternative approaches like printing technologies to enable flexible optoelectronic memory development. Here, a novel approach is presented to print optoelectronic memories using graphene (Gr)/WS₂ nanostructured composite ink. This composite ink utilizes Gr nanosheets as conductive channels and defect sites in WS₂ as charge capture centers, forming local heterojunctions that enable efficient photoelectric storage. Two types of Gr/WS₂ composite inks are developed, tested, and compared with pure Gr ink. The findings reveal that the Gr/WS₂ nanocomposite ink with enhanced edge states exhibits superior memory performance. Devices print using this ink demonstrated the ability to store visual information in both single-pulse and multi-pulse modes, reflecting potential applications in retina-inspired visual persistence and neuromorphic computing. This work highlights the promise of printed 2D material-based optoelectronic memories for advancing scalable, low-cost, and flexible electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband, Single-Layered, and Optically Transparent Reflective Phase-Shifting-Surface Array for Beam Manipulation and Enhanced Wireless Communications","authors":"Longzhu Cai, Jianjing Zhou, Jiaqi Zhou, Lei Zhang, Zhi Hao Jiang, Wei Hong","doi":"10.1002/aelm.202400827","DOIUrl":"https://doi.org/10.1002/aelm.202400827","url":null,"abstract":"Optically transparent electromagnetic devices play a crucial role in modern society, yet conventional optically transparent millimeter-wave devices suffer from high return loss, limited phase shift, narrow bandwidth, high profile, and low optical transparency. Current materials, fabrication processes, and design methodologies restrict the development of high-performance optically transparent reflective phase-shifting-surface arrays or reflectarrays. To address this, a design concept for broadband, single-layered, and optically transparent reflectarray antennas is reported, which can be integrated with glass windows for beam manipulation and enhanced indoor signal coverage and wireless communications. The proposed reflectarray element employs a single-layered cyclic olefin copolymer (COC) medium as the dielectric substrate, with fine metal line (FML) patterns under 50 µm width to create multi-resonant structures for phase range broadening. This architecture combines multi-resonant phase-shifting elements with minimal FML structures and low-loss COC substrate, achieving exceptional antenna performance while ensuring high optical transparency. Wireless communication transmission experiments validate the functionality and performance advantages of the fabricated optically transparent reflectarray. These results substantiate the immense potential and broad application prospects of the novel optically transparent COC dielectric material, the FML structure, and the proposed design concepts and methods in advancing high-performance optically transparent reflectarrays and related communication systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}