Advanced Electronic Materials最新文献_第2页

Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals (Adv. Electron. Mater. 3/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-11 DOI: 10.1002/aelm.202570009

Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai

引用次数: 0

Photoinduced Melting of V4O7 Correlated State (Adv. Electron. Mater. 3/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-11 DOI: 10.1002/aelm.202570008

Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko

引用次数: 0

Organic Electrochemical Transistors: From Lithography to Large-Scale Printing (Adv. Electron. Mater. 3/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-11 DOI: 10.1002/aelm.202570007

Ling Huang, Dezhen Zhao, Xinwen Yan, Xu Liu, Qingqing Sun, Huige Yang, Xuying Liu, Hanyu Jia

引用次数: 0

Resistance Drift of Phase Change Materials Beyond the Power Law

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-10 DOI: 10.1002/aelm.202400905

Jakob Ballmaier, Sebastian Walfort, Martin Salinga

{"title":"Resistance Drift of Phase Change Materials Beyond the Power Law","authors":"Jakob Ballmaier, Sebastian Walfort, Martin Salinga","doi":"10.1002/aelm.202400905","DOIUrl":"https://doi.org/10.1002/aelm.202400905","url":null,"abstract":"Phase change materials (PCMs) are used in fast, non-volatile memory applications, where the information is encoded in the electrical contrast between a conductive crystalline and a resistive amorphous state. In principle, the resistance of a single device can be programmed in a near continuous manner by tuning the amorphous to crystalline volume ratio. This makes PCMs interesting for novel analog computing architectures. Here, a key challenge remains in either mitigating or even utilizing a characteristic of the amorphous state: Its resistance evolves with time. Because this so-called resistance drift is captured on typical experimental timescales by an otherwise featureless power law, it can be described by a variety of physical models, leaving the true underlying microscopic origin obscured. Using both electrical and ultrafast optical heating pulses, the resistance drift is resolved over 11 orders of magnitude in time down to the first nanoseconds after formation of the amorphous state. Clear deviations from the power law both on short timescales below 1 µs and, at elevated temperatures, also on longer timescales of seconds are observed. The observations are discussed in view of common drift models. Moreover a unifying energy landscape picture is offered as an interpretation of the experimental evidence.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400841

Sheng-Yen Zheng, Wei-Ning Kao, Yu-Hsing Chen, Yung-Hsien Wu

{"title":"Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing","authors":"Sheng-Yen Zheng, Wei-Ning Kao, Yu-Hsing Chen, Yung-Hsien Wu","doi":"10.1002/aelm.202400841","DOIUrl":"https://doi.org/10.1002/aelm.202400841","url":null,"abstract":"While n-FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge interface quality. In this work, ferroelectric HfZrOx (HZO) is integrated with a high-k Al2O3/AlN interfacial layer (IL), along with microwave annealing (MWA), to implement Ge n-FeFET memory devices, and their memory and reliability characteristics, as well as their potential for neuromorphic applications, are extensively explored. A large memory window (MW) of 2.5 V is achieved by applying ±5 V for 5 µs while 3 bits/cell (triple-level cell) operation is demonstrated. By using a recovery scheme, excellent 1-bit/cell (single-level cell) characteristics up to 108 cycles are also obtained. The proposed IL and low thermal budget of MWA alleviate element diffusion and reduce oxygen vacancies, marking the first demonstration of Ge n-FeFET memory devices controlled by dipoles. Furthermore, short-term synaptic plasticity, such as excitatory/inhibitory postsynaptic currents (EPSC/IPSC), which are essential for neuromorphic computing is also achieved. These findings suggest that Ge n-FeFET memory devices could pave the way for high-density embedded memory applications and could further be integrated with existing Ge p-FeFET memory devices to form Ge-based FeCMOS, enabling more versatile circuit functionalities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143575478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400789

Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua

{"title":"Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor","authors":"Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua","doi":"10.1002/aelm.202400789","DOIUrl":"https://doi.org/10.1002/aelm.202400789","url":null,"abstract":"The Hodgkin-Huxley model is an accurate yet convoluted mathematical description of the complex nonlinear dynamics of a biological neuronal axon. Employing four degrees of freedom, three of which embodied by the sodium and potassium memristive ion channels, it is capable to capture the cascade of three fundamental bifurcations, specifically a Hopf supercritical, a Hopf subcritical, and a saddle-node limit cycle bifurcation, marking the life cycle from birth to extinction via All-to-None effect of an electrical spike, also referred to as Action Potential in the literature, across biological axon membranes under monotonic change in the net synaptic current. This paper recurs to powerful concepts from the Local Activity and Edge of Chaos Principle and to methods from Circuit Theory and Nonlinear Dynamics to design the first and simplest ever-reported electrical circuit, which, leveraging the peculiar Negative Differential Resistance effects in a volatile NbOx threshold switch from NaMLab, and including additionally just one capacitor and one DC current source in its minimal topology, undergoes the three-bifurcation cascade, emerging across the fourth-order Hodgkin-Huxley neuron model under monotonic current sweep, while requiring half the number of degrees of freedom, which reveals the promising potential of Memristors on “Edge of Chaos” for energy-efficient bio-inspired electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"67 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143569579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Throughput Production of Electrically Conductive Yarn (E-Yarn) for Smart Textiles

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400700

Jonas Marten, Nathalie Gaukel, Yunkai Hu, Yiliang Wang, Guangjie Yuan, Norbert Willenbacher

{"title":"High-Throughput Production of Electrically Conductive Yarn (E-Yarn) for Smart Textiles","authors":"Jonas Marten, Nathalie Gaukel, Yunkai Hu, Yiliang Wang, Guangjie Yuan, Norbert Willenbacher","doi":"10.1002/aelm.202400700","DOIUrl":"https://doi.org/10.1002/aelm.202400700","url":null,"abstract":"Electrically conductive yarn is essential for developing smart textiles, combining advanced functionalities with the desirable mechanical properties of traditional yarn. This study introduces an innovative method for manufacturing Nylon yarn coated with an electrically conductive, thermoplastic polymer layer. The method is based on the classical wire coating process, thus enabling rapid scale-up. The feasibility of the new approach is demonstrated by coating a Nylon yarn 250 µm in diameter with a 20 µm thermoplastic coating layer consisting of a polyamide (Platamid M1276 F, melting temperature 110–120 °C) matrix including 20 vol% silver flakes (d50 2.5 µm). The resultant resistivity of the coated yarn is ≈7.5 Ω cm−1, and essentially kept constant even after multiple bending and washing cycles simulating typical stresses during textile utilization. Additionally, the yarn is used to fabricate a pressure sensor, demonstrating a pressure sensitivity range of 1–20 kPa, a sensitivity of 10−3 kPa−1, and a response time of 224 ms. This study showcases a versatile manufacturing process for electrically conductive yarn suitable for smart textile applications. It emphasizes the potential for integrating these yarns into functional textile systems and highlights the feasibility of using existing industrial-scale coating equipment, thus facilitating rapid market integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N-Type Small-Molecule Semiconductor Implementation and Thermal Optimization

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400864

Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu

{"title":"Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N-Type Small-Molecule Semiconductor Implementation and Thermal Optimization","authors":"Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu","doi":"10.1002/aelm.202400864","DOIUrl":"https://doi.org/10.1002/aelm.202400864","url":null,"abstract":"Organic field-effect transistor-based nonvolatile memories (ONVMs) are pivotal in advanced electronic systems but often suffer from limited endurance, a characteristic that remains poorly understood across varying device structures. This work reveals a general mechanism for the deterioration of ONVM endurance related to the imperfect crystallinity of n-type small-molecule-semiconductor charge-trapping layer, N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13). Through the optimization of annealing temperatures aimed at minimizing deep traps, the endurance characteristics of pentacene-based ONVMs are greatly improved, sustaining high ION/IOFF ratios larger than 104 without notable degradation over 104 programming/erasing cycles, a marked improvement over previous configurations. This research not only advances the understanding of the physical mechanisms underlying ONVMs’ degradation but also offers a practical approach to significantly enhance the endurance of memory devices. These insights are crucial for the development of ONVMs with robust performance suitable for advanced electronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143546050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400866

Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang

引用次数: 0

Encapsulated Organohydrogel Couplants for Wearable Ultrasounds

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400961

Xiaoru Dong, Zhi Yang, Chaoran Xu, Jun Zhao, Juntong Zhu, Haokun Yi, Hui Xu, Zhuo Li

{"title":"Encapsulated Organohydrogel Couplants for Wearable Ultrasounds","authors":"Xiaoru Dong, Zhi Yang, Chaoran Xu, Jun Zhao, Juntong Zhu, Haokun Yi, Hui Xu, Zhuo Li","doi":"10.1002/aelm.202400961","DOIUrl":"https://doi.org/10.1002/aelm.202400961","url":null,"abstract":"The couplant layer that transmits sound waves to the skin is essential for ultrasound imaging. Conventional liquid-based couplants are unsuitable for wearable detectors, while polymer-based dry couplants often suffer from high acoustic attenuation. Hydrogel-based couplants possess ideal acoustic and mechanical properties; however, water evaporation restricts their application in long-term monitoring. Current strategies to improve water retention, such as encapsulating hydrogels with elastomers, typically overlook the issue of curing shrinkage. This shrinkage induces a wrinkled interface between the elastomer and hydrogel, which can cause scattering and reflection of acoustic waves, thereby compromising ultrasound quality. To address this problem, a prefabricated hydrogel is employed as a template to mitigate the curing shrinkage at the interface. In the meantime, a large amount of glycerol is added to the template to form the organohydrogel, which reduces interactions between polymer chains, further minimizing curing shrinkage and resulting in a smooth interface. Additionally, the glycerol within the organohydrogel, combined with the external encapsulation layer, enhances long-term water retention. The results demonstrate that the prepared couplants maintain stable attenuation coefficients and produce clear imaging over 8 days.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143546042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0