Advanced Electronic Materials最新文献_第2页

Ferromagnetic Resonance Response of bcc Fe60V40 Layers Generated from Short-Range Ordered Precursors 由短程有序前驱体生成的bcc Fe60V40层的铁磁共振响应

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-22 DOI: 10.1002/aelm.202500697

Md. Shadab Anwar, Hamza Cansever, Kilian Lenz, Ulrich Kentsch, Shengqiang Zhou, Jürgen Fassbender, Kay Potzger, Olav Hellwig, Jürgen Lindner, Rantej Bali

{"title":"Ferromagnetic Resonance Response of bcc Fe60V40 Layers Generated from Short-Range Ordered Precursors","authors":"Md. Shadab Anwar, Hamza Cansever, Kilian Lenz, Ulrich Kentsch, Shengqiang Zhou, Jürgen Fassbender, Kay Potzger, Olav Hellwig, Jürgen Lindner, Rantej Bali","doi":"10.1002/aelm.202500697","DOIUrl":"https://doi.org/10.1002/aelm.202500697","url":null,"abstract":"Layers of body-centered cubic (bcc) Fe60V40 are generated in short-range ordered (SRO) Fe60V40 precursors through atomic displacements caused by the irradiation of light noble gas ions. The structural change leads to the onset of ferromagnetism confined to the bcc layers. Here, the variation of ferromagnetic resonance response as a function of Ne+-ions of energies varying from 5 to 30 keV, while keeping the fluence fixed at 7 × 1015 ions/cm2 is investigated. The irradiation was performed on SRO Fe60V40 films grown at 300 K as well as at 573 K. Shifts of the resonance line position as a function of ion energy are observed. As the ion energy is increased, the atomic displacements are distributed deeper within the film, thereby increasing the thickness of the induced bcc layers. The results can be understood in terms of a saturation magnetization (Ms) that is fixed for a given growth temperature, and an increasing effective magnetic thickness (teff) with increasing ion-energy. Despite the varying teff, the Landé g-factor and Gilbert damping tend to remain relatively stable, respectively at 2.099 ± 0.006 and 0.003 ± 0.001, thus providing a material system well-suited for microwave applications, that can be reliably modified using ion-irradiation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147732345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance and Environmentally Stable Organic Electrochemical Transistors Enabled by a Reprocessed Self-Doped PEDOT Channel 通过再加工自掺杂PEDOT通道实现高性能和环境稳定的有机电化学晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-21 DOI: 10.1002/aelm.202600011

Ruifeng Xu, Hirokazu Yano, Hidenori Okuzaki, Takao Someya, Tomoyuki Yokota

{"title":"High-Performance and Environmentally Stable Organic Electrochemical Transistors Enabled by a Reprocessed Self-Doped PEDOT Channel","authors":"Ruifeng Xu, Hirokazu Yano, Hidenori Okuzaki, Takao Someya, Tomoyuki Yokota","doi":"10.1002/aelm.202600011","DOIUrl":"https://doi.org/10.1002/aelm.202600011","url":null,"abstract":"Organic electrochemical transistors (OECTs) require channel materials that exhibit high transconductance, strong ionic–electronic coupling, and long-term operational stability in aqueous and humid environments. However, despite their excellent electrical performance, state-of-the-art Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) OECTs suffer from severe degradation owing to the hygroscopic PSS component, leading to a rapid loss of drain current under high temperature and humidity. In this study, planar OECTs that achieve both high electrical performance and exceptional environmental robustness by using a reprocessed self-doped PEDOT (Re-S-PEDOT) channel is presented. The devices exhibit a drain current of 3.66 × 10−5 A µm−1 at VG = –0.5 V and VD = –0.5 V, which is comparable to PEDOT:PSS OECTs and represents a 20-fold improvement over the pristine self-doped PEDOT (S-PEDOT). Under harsh aging conditions (40°C, 85% RH), Re-S-PEDOT devices retained 51% of their initial drain current after one week, whereas PEDOT:PSS devices retained only 7.8%. Structural characterization demonstrated that the reprocessing procedure yielded more uniform films and improved the molecular organization, thereby contributing to enhanced ionic accessibility and device-to-device consistency. This study introduces a simple and scalable strategy to realize high-performance and long-term stable OECTs, thereby increasing the material options that can be used for reliable bioelectronic and neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147726571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emergence of Double-Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2 加压Dirac半金属BaMg2Bi2双圆顶超导性的出现

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-21 DOI: 10.1002/aelm.202500806

Qi Wang, Juefei Wu, Cuiying Pei, Yi Zhao, Yiyan Wang, Yanpeng Qi

引用次数: 0

Atomic Layer Deposition of Disordered p-Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P-Channel SnO Thin-Film Transistor Characteristics 用异差锡（II）前驱体沉积无序p型SnO：无序对p沟道SnO薄膜晶体管特性的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-20 DOI: 10.1002/aelm.202500853

Benjamin J. Peek, Kham Man Niang, Benjamin McMitchell, Heath Bagshaw, Karl Dawson, Adrian Gardner, Babak Bakhit, James D. Parish, Oliver W. S. Clark, Joe C. Goodall, Andrew Brookes, Satyajit Das, Feras Alkhalil, Andrew L. Johnson, Andrew J. Flewitt, Paul R. Chalker

{"title":"Atomic Layer Deposition of Disordered p-Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P-Channel SnO Thin-Film Transistor Characteristics","authors":"Benjamin J. Peek, Kham Man Niang, Benjamin McMitchell, Heath Bagshaw, Karl Dawson, Adrian Gardner, Babak Bakhit, James D. Parish, Oliver W. S. Clark, Joe C. Goodall, Andrew Brookes, Satyajit Das, Feras Alkhalil, Andrew L. Johnson, Andrew J. Flewitt, Paul R. Chalker","doi":"10.1002/aelm.202500853","DOIUrl":"https://doi.org/10.1002/aelm.202500853","url":null,"abstract":"The readily scalable deposition of amorphous oxide semiconductor films is desirable for polymer-based flexible and large-area thin-film transistor technology. Here, the atomic layer deposition (ALD) of p-type SnO is demonstrated using a new heteroleptic tin(II) precursor. The films exhibit a disordered microstructure, due to the intercalation of fragments of the precursor ligands. Annealing induces crystallization of SnO, as volatile impurities are expelled from the film. Initial examination of bottom gate SnO thin-film transistors with SiO2 dielectric exhibit a maximum field-effect mobility of 1.9 cm2 V−1 s−1 and a minimum threshold voltage of 2 V, just before the onset of crystallization. Once capped with an alumina passivation layer, the devices have stable transfer characteristics, post annealing, over a period of two years, and a stable field effect mobility under negative bias stress of 1 MV cm−1 for 2 h at ambient. The disordered SnO semiconductor characteristics make it a candidate for polymer-based CMOS electronics, where a low thermal budget meets the requirements of polymeric substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"135 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147719648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoresponse Properties of Ambipolar Transport in WSe2 Field-Effect Transistors WSe2场效应晶体管双极性输运的光响应特性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-19 DOI: 10.1002/aelm.202500669

Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee

{"title":"Photoresponse Properties of Ambipolar Transport in WSe2 Field-Effect Transistors","authors":"Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee","doi":"10.1002/aelm.202500669","DOIUrl":"https://doi.org/10.1002/aelm.202500669","url":null,"abstract":"This study investigates the photoresponse properties of two-dimensional (2D) tungsten diselenide (WSe2) ambipolar field-effect transistors (FETs), distinguishing three distinct transport regions based on major charge carrier types: unipolar, saturation, and ambipolar transport. The ambipolar transport characteristics of WSe2 FETs change under light illumination. Specifically, the critical drain voltage, at which a sharp increase in drain current occurs, shifts under illumination toward the positive gate voltage direction due to the photogating effect. Unlike traditional avalanche photodetectors, which suffer from material degradation due to high-energy collisions of charge carriers such as electrons and holes, the photodetector with ambipolar transport enhances device stability and longevity by operating at lower electric fields. Experimental results demonstrate that the ambipolar WSe2 FETs can achieve a specific detectivity of 3 × 108 Jones in the ambipolar transport region, which is 104 Jones order higher than that in the unipolar region. This study highlights the potential for enhanced performance of ambipolar 2D devices in optoelectronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147719709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation 通过铜注入提高氧化钽忆阻器器件的电阻开关均匀性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-19 DOI: 10.1002/aelm.202600002

Shaochuan Chen, Ilia Valov

{"title":"Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation","authors":"Shaochuan Chen, Ilia Valov","doi":"10.1002/aelm.202600002","DOIUrl":"https://doi.org/10.1002/aelm.202600002","url":null,"abstract":"Resistive switching in oxide-based memristor devices is governed by multiple physical and electrochemical phenomena within the oxides. The statistical nature of the defect formation and charge transport make it challenging to control device characteristics, causing high switching and spatial variation. Therefore, improving the quality of the oxide layer by a controlled deposition technique with low film surface roughness and high electrical uniformity is crucial to achieve stable switching characteristics and to reduce cycles and device variation. In this work, we show that the electrical uniformity of Ta2O5 film and its resistive switching performance can be improved by co-sputtering the Ta2O5 layer with Cu. The in situ implanted approach improves the film uniformity and helps achieve lower forming voltages. In contrast to Ta2O5-based memristors, the Cu-doped Ta2O5-based devices exhibit more reliable switching with low cycle-to-cycle and device-to-device variability by reducing the standard deviation and coefficient of variation in SET and RESET voltages. The high resistance and low resistance values are found more stable with minimal spatial variation. Moreover, the proposed devices exhibit sub-10 ns switching speed and multiple resistive states, demonstrating great potential for neuromorphic and computation-in-memory applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147719647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MXenes: Bridging the Gap Between Advanced Materials and Sustainable Technologies in Energy and Environmental Applications MXenes：弥合能源和环境应用中先进材料与可持续技术之间的差距

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-19 DOI: 10.1002/aelm.202500801

Fatemeh Saeedi, Erfan Zare, Reza Ansari, Mojtaba Haghgoo, Saeid Sahmani

{"title":"MXenes: Bridging the Gap Between Advanced Materials and Sustainable Technologies in Energy and Environmental Applications","authors":"Fatemeh Saeedi, Erfan Zare, Reza Ansari, Mojtaba Haghgoo, Saeid Sahmani","doi":"10.1002/aelm.202500801","DOIUrl":"https://doi.org/10.1002/aelm.202500801","url":null,"abstract":"In recent years, MXenes, a new family of two-dimensional materials composed of transition metal carbides, nitrides, and carbonitrides, have garnered substantial scientific attention due to their exceptional and distinctive physical and chemical properties. These properties are largely influenced by their diverse elemental compositions and surface functional groups. MXenes exhibit excellent compatibility with various materials such as polymers, metal oxides, and carbon nanotubes, enabling the fabrication of composites with tailored functionalities. In addition to their recognized use as electrode materials in energy storage devices, MXenes and their composites have also shown significant potential for various environmental applications. These include electrochemical and photocatalytic water splitting, carbon dioxide reduction, water treatment, and sensing technologies, attributed to their high electrical conductivity, strong reduction potential, and biocompatibility. This article delivers an in-depth summary of the various synthesis techniques, fundamental characteristics, and the latest progress in the field of MXenes and their composites, with special emphasis on their practical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147720042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin-Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics 壳聚糖基薄膜热传感器的可持续瞬态电子学研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-16 DOI: 10.1002/aelm.202500699

Ahmed Rasheed, Soufiane Krik, Sundus Riaz, Hafiza Faiqa Maqsood, Jacopo Nicoletti, Riccardo Zamboni, Guglielmo Trentini, Pietro Ibba, Franco Cacialli, Andrea Gaiardo, Giuseppe Cantarella, Niko Münzenrieder, Paolo Lugli, Giovanni Antonio Salvatore, Luisa Petti

{"title":"Thin-Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics","authors":"Ahmed Rasheed, Soufiane Krik, Sundus Riaz, Hafiza Faiqa Maqsood, Jacopo Nicoletti, Riccardo Zamboni, Guglielmo Trentini, Pietro Ibba, Franco Cacialli, Andrea Gaiardo, Giuseppe Cantarella, Niko Münzenrieder, Paolo Lugli, Giovanni Antonio Salvatore, Luisa Petti","doi":"10.1002/aelm.202500699","DOIUrl":"https://doi.org/10.1002/aelm.202500699","url":null,"abstract":"In recent years, transient (bio)electronics has witnessed a remarkable surge for their potential in sustainable and biocompatible electronic solutions. Here, chitosan-based films are demonstrated as versatile transient substrates for thin-film thermal sensors, merging sustainability with standard microfabrication. Two sensor types are fabricated: resistive temperature detectors (RTDs) via sputtering of a 100 nm molybdenum (Mo) layer, and thermistors through subsequent deposition of a 50 nm amorphous indium gallium zinc oxide (a-IGZO) semiconductor layer. Bi-directional thermal characterization in physiologically relevant ranges (25–55 <mjx-container ctxtmenu_counter=\"207\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70302-math-0001.png\"><mjx-semantics><mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"2,3\" data-semantic-content=\"4\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"Superscript ring Baseline normal upper C\" data-semantic-type=\"infixop\"><mjx-msup data-semantic-children=\"0,1\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"unknown\" data-semantic-type=\"superscript\"><mjx-mrow data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\"></mjx-mrow><mjx-script style=\"vertical-align: 0.363em;\"><mjx-mo data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" size=\"s\"><mjx-c></mjx-c></mjx-mo></mjx-script></mjx-msup><mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"5\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"><mjx-c></mjx-c></mjx-mo><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi></mjx-mrow></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70302:aelm70302-math-0001\" display=\"inline\" location=\"graphic/aelm70302-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><mrow data-semantic-=\"\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"2,3\" data-semantic-content=\"4\" data-semantic-role=\"implicit\" data-semantic-speech=\"Superscript ring Baseline normal upper C\" data-semantic-type=\"infixop\"><msup data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-parent=\"5\" data-semantic-role=\"unknown\" data-semantic-type=\"superscript\"><mrow data-semantic-=\"\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\"></mrow><mo data-semantic-=\"\" data-semantic-parent=\"2\" ","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147695797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient In-Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI 利用工业FDSOI上肖特基势垒晶体管双线性特性的高效硬件内矩阵向量乘法和加法

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-15 DOI: 10.1002/aelm.202500864

Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer

{"title":"Efficient In-Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI","authors":"Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer","doi":"10.1002/aelm.202500864","DOIUrl":"https://doi.org/10.1002/aelm.202500864","url":null,"abstract":"Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In-hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency. This work shows that the current of a fully CMOS-compatible Schottky barrier transistor can respond linearly to changes in either the source–gate or the source–drain voltage. This bi-linearity allows analog vector multiplication directly at the device level. Alongside the access to independent biasing through the additional back-gate offered by the FDSOI technology, which can be used to implement addition directly at the device level, it has great potential for in-hardware computation. The performance and multilevel operation are demonstrated by the electrical characterization of a two-transistor system, showcasing how the technology could be implemented in larger crossbar arrays. The potential for in-hardware computation is evaluated against a full in-software solution by comparing the inference performance on the Iris dataset. The simulated in-hardware schemes utilizing the back-biased Schottky barrier transistors can achieve the same accuracy as the digital implementation but with an order of magnitude less power dissipation per operation when compared to CMOS-based digital hardware accelerators proposed in the literature.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"242 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147695798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Temperature Annealed Cu/Al Bilayer Architecture for Highly Stable Flexible Metal-Mesh Transparent Electrodes 高稳定柔性金属网透明电极的低温退火Cu/Al双层结构

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-04-15 DOI: 10.1002/aelm.202600007

Yourong Shu, Ruiyao Liu, Peng Wu, Yongjiang Di, Huichao He, Qian Yang, Wenrong Wang, Hanmei Jiang, Tao Han, Lijian Meng, Haibo Ruan, Sheng Tang

{"title":"Low-Temperature Annealed Cu/Al Bilayer Architecture for Highly Stable Flexible Metal-Mesh Transparent Electrodes","authors":"Yourong Shu, Ruiyao Liu, Peng Wu, Yongjiang Di, Huichao He, Qian Yang, Wenrong Wang, Hanmei Jiang, Tao Han, Lijian Meng, Haibo Ruan, Sheng Tang","doi":"10.1002/aelm.202600007","DOIUrl":"https://doi.org/10.1002/aelm.202600007","url":null,"abstract":"Flexible transparent electrodes (FTEs) are essential for next-generation optoelectronics, yet indium tin oxide (ITO) is limited by brittleness and high cost. Copper metal meshes are promising alternatives but suffer from rapid oxidation. Here, we report a Cu/Al bilayer strategy in which an ultrathin Al overlayer self-passivates into a compact Al2O3 barrier, effectively suppressing Cu degradation while preserving optoelectronic performance. Low-temperature vacuum annealing (≤125°C) further reduces defect induced scattering and improves interfacial conformity, yielding a 36% reduction in sheet resistance (0.196 to 0.125 Ω/□). The resulting Cu/Al films exhibit excellent environmental stability, with negligible resistance change after 168 h of damp-heat aging (85°C/85% RH). Photolithographically patterned hexagonal Cu/Al meshes on PET achieve 4.58 Ω/□ at ≈81% visible transmittance, show only a 12% resistance increase after 150 days of natural aging (vs 42% for Cu), and maintain stable conductivity after 1000 bending cycles at 135°. Integrated into a touch sensor, the meshes demonstrate reliable touch, proximity, and force sensing. This scalable bilayer-and-anneal strategy enables oxidation-resistant, high-performance, ITO-free transparent electrodes for flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147695800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0