Advanced Electronic Materials最新文献_第2页

Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects 金刚石和立方氮化硼（111）界面上的二维载气：界面结合和缺陷的作用

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-28 DOI: 10.1002/aelm.70623

Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz

{"title":"Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects","authors":"Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz","doi":"10.1002/aelm.70623","DOIUrl":"https://doi.org/10.1002/aelm.70623","url":null,"abstract":"Diamond and cubic boron nitride (c‐BN) are promising ultrawide‐bandgap semiconductors for next‐generation high‐power and high‐frequency devices. Enabling these devices needs better understanding of interface electronic structure. Here, we investigate the effects of interfacial bonding and antisite point defects on the formation of two‐dimensional (2D) carrier gases at (111) diamond/c‐BN interfaces using hybrid density functional theory. c‐BN can be B‐ or N‐terminated. For each termination type, we identify two distinct interfacial bonding configurations, where a B (or N) atom is bonded to either one or three C atoms, resulting in four bonding types. Our results show that electron‐deficient C−B and electron‐rich C−N interfacial bonds result in 2D hole gas and 2D electron gas, respectively. Configurations with B (or N) bonded to three C atoms exhibit three times higher carrier density (1.3310 ) than those bonded to one C atom (4.4410 ). Furthermore, ‐type and ‐type antisite defects can stabilize C−B and C−N bonded interfaces, respectively, while reducing carrier density. Nevertheless, the carrier density remains high () even with these defects. This work may guide the engineering of diamond/c‐BN interfaces with tunable carrier densities for ‐ or ‐type conduction.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149274827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical Unclonable Functions From Microwave Metasurface Fingerprints 微波超表面指纹的物理不可克隆功能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-28 DOI: 10.1002/aelm.70624

Guanxiong Shen, Jingyi Liang, Xinyu Li, Kezhan Zhao, Jian Wei You

{"title":"Physical Unclonable Functions From Microwave Metasurface Fingerprints","authors":"Guanxiong Shen, Jingyi Liang, Xinyu Li, Kezhan Zhao, Jian Wei You","doi":"10.1002/aelm.70624","DOIUrl":"https://doi.org/10.1002/aelm.70624","url":null,"abstract":"Electromagnetic (EM) metasurfaces enable precise control over wave amplitude, phase, and polarization, and are increasingly used in wireless systems for communications and sensing. As these metasurface‐enabled systems move toward practical deployment, reliable wireless authentication becomes essential for preventing device spoofing and unauthorized access. This work proposes a metasurface‐based physical unclonable function (MetaPUF) that endows a functional metasurface with an additional authentication capability beyond its normal wavefront‐control operation. The key principle is that nominally identical metasurfaces fabricated through the same manufacturing process retain the designed macroscopic wave‐control function, but inevitably contain hardware‐level imperfections during lithography, etching, and material processing. These imperfections cause subtle, device‐specific deviations from the nominal EM response. A neural network extracts these deviations as EM fingerprints, represented by discriminative feature embeddings, for device authentication. The proposed framework supports both closed‐set identification of enrolled metasurfaces and open‐set rejection of previously unseen devices. Experiments on ten fabricated 1‐bit metasurfaces achieve 94.29% closed‐set identification accuracy at 3 dB SNR. For open‐set authentication, Normalized IQ increases the ROC‐AUC from 0.8412 to 0.9011 relative to the baseline. These results demonstrate that ordinary functional metasurfaces can serve as self‐authenticating EM hardware primitives by exploiting fabrication imperfections that are difficult to avoid in practical manufacturing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149274828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic 双缺陷工程氧化氮锌薄膜晶体管在几何对称氧化物逻辑中实现静电电流平衡

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-28 DOI: 10.1002/aelm.70629

Seung Min Lee, Dong Hyeon Kim, Ji Won Woo, Dong Beom Lee, Kye Yeong Jo, Joo Hyun Jeong, Yun Hyeok Jeong, Joon Hwang, Sang Jik Kwon, Eou‐Sik Cho, Min‐Kyu Park

{"title":"Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic","authors":"Seung Min Lee, Dong Hyeon Kim, Ji Won Woo, Dong Beom Lee, Kye Yeong Jo, Joo Hyun Jeong, Yun Hyeok Jeong, Joon Hwang, Sang Jik Kwon, Eou‐Sik Cho, Min‐Kyu Park","doi":"10.1002/aelm.70629","DOIUrl":"https://doi.org/10.1002/aelm.70629","url":null,"abstract":"In this study, high‐mobility zinc oxynitride (ZnON) thin‐film transistors (TFTs) and geometrically symmetric active depletion‐load hybrid inverters are demonstrated. Through dual‐defect engineering of coupled oxygen‐deficient‐related defect states and nitrogen‐related disordered bonding configurations within the mixed‐anion ZnON matrix, subgap states are effectively controlled during reactive sputtering. The optimized single‐gate ZnON TFT exhibits a field‐effect mobility of 26.58 cm 2 V −1 s −1 . By dual‐gate integration, a negative threshold‐voltage shift of approximately −10 V was observed under zero top‐gate bias. Calibrated technology computer‐aided design (TCAD) simulations reproduce this behavior by introducing a localized interfacial electrostatic contribution while preserving the independently calibrated bulk response. Rather than treating this phenomenon as a process limitation, the resulting depletion‐mode operation is strategically repurposed in a hybrid n‐type metal‐oxide‐semiconductor (NMOS) inverter. Applying a negative top‐gate bias (V TG = −10 V) to the load TFT suppresses the excess load current. This electrical pull‐down‐to‐pull‐up ratio modulation achieves current balancing without geometric asymmetry. Consequently, the inverter demonstrates a high voltage gain of 79.42 V/V together with stable rail‐to‐rail pull‐down operation. This work demonstrates a material‐device‐circuit design strategy in which process‐associated electrostatic modification is repurposed as an electrostatic circuit‐design parameter for geometrically symmetric oxide logic.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"36 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149274829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine Learning-Assisted Design and Performance Prediction of a Compact Dual-Band Polarization-Insensitive THz Metamaterial Absorber for Skin-Cancer-Related Refractive-Index Sensing 用于皮肤癌相关折射率传感的紧凑型双波段偏振不敏感太赫兹超材料吸收器的机器学习辅助设计和性能预测

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-06-01 DOI: 10.1002/aelm.70449

Md. Murad Kabir Nipun, S. M. Rifatur Rana, Md. Golam Morshed, Imrose Jahan, F. A. Sabbir Ahamed, Md. Jahedul Islam

{"title":"Machine Learning-Assisted Design and Performance Prediction of a Compact Dual-Band Polarization-Insensitive THz Metamaterial Absorber for Skin-Cancer-Related Refractive-Index Sensing","authors":"Md. Murad Kabir Nipun, S. M. Rifatur Rana, Md. Golam Morshed, Imrose Jahan, F. A. Sabbir Ahamed, Md. Jahedul Islam","doi":"10.1002/aelm.70449","DOIUrl":"10.1002/aelm.70449","url":null,"abstract":"The proposed metamaterial absorber is built on a compact Quad-Arrow Split Ring Resonator (QASRR) consisting of a diamond-shaped structure with a centrally loaded split circular ring with four arrow-shaped extensions. The absorber exhibits polarization-insensitive dual-band absorption at 3.3 and 4.8 terahertz (THz), with peak absorptivities of 99.91% and 99.96%, respectively. Its normalized size is 0.24λ × 0.24λ × 0.03λ at the first resonance. Using representative refractive indices for normal and cancer-related skin-cell models (n = 1.360 and n = 1.380), the absorber resolves a small refractive-index contrast under a controlled homogeneous analyte model, with sensitivities of 2950 GHz/RIU and 4846 gigahertz per refractive index unit (GHz/RIU). The corresponding figure of merit (FOM) values are 32.13 and 21.5, with Quality-factors of 14.27 and 12.8. Field distributions, surface currents, substrate-dependent parametric studies, and equivalent circuit modeling are used to explain the dual-resonance mechanism and validate the results. The main contribution is a unified framework that links compact QASRR-based dual-band absorption, skin-cancer-related refractive-index sensing, field/current and circuit-based electromagnetic mechanism interpretation, and StackNet-assisted response prediction. StackNet is developed using physics-informed engineered features and compared with k-nearest neighbor (KNN), random forest (RF), extra trees (ET), and extreme gradient boosting (XGBoost) models. It achieves an average coefficient of determination (R2) of 0.9986 across TC-50, TC-60, and TC-40 datasets, indicating reliable prediction of the simulated absorber response.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70449","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148288384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces 可编程元表面中全波验证实时波束形成的物理信息生成代理学习

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-09-04 DOI: 10.1002/aelm.70480

Wenqian Liu, Weidong Chen, Chang Chen, Xiang Zhang, Sensong An

{"title":"Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces","authors":"Wenqian Liu, Weidong Chen, Chang Chen, Xiang Zhang, Sensong An","doi":"10.1002/aelm.70480","DOIUrl":"10.1002/aelm.70480","url":null,"abstract":"Programmable metasurfaces enable agile electromagnetic beam shaping, yet the inverse design of dense binary apertures is complicated by feed illumination, local coupling, finite aperture effects, and mode dependent state statistics. A physics informed generative surrogate framework is developed for real time beamforming with full wave validation. The framework integrates a conditional state matrix generator, a parametric aperture physics surrogate with hard routed residual experts, two stage NSGA-II optimization, and CST verification. The generator achieves 96.67% binary accuracy and a 94.47% F1 score. The best predictor gives a test RMSE of 1.108 dBi, an MAE of 0.549 dBi, and a peak gain MAE of 0.114 dB. Across 137 optimized full wave validation cases, the mean peak gain bias remains close to -0.13 dB. For 35 paired real time/final cases, the refined search improves the full wave target region gain by 2.943 dB on average and the peak gain by 0.573 dB, indicating that the surrogate can support practical metasurface beam optimization.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70480","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148893584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near-Infrared Tin-Lead Perovskite LEDs 咔唑铵处理改善988 nm近红外锡铅钙钛矿led的空穴传输层表面

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-09-17 DOI: 10.1002/aelm.70566

Jiale Chen, Jiaxiong Li, David Garcia Romero, Lijun Chen, Han Wang, Jane Kardula, Ryan Chiechi, Mordechai Kot, Wouter T. M. Van Gompel, Maria Antonietta Loi

{"title":"Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near-Infrared Tin-Lead Perovskite LEDs","authors":"Jiale Chen, Jiaxiong Li, David Garcia Romero, Lijun Chen, Han Wang, Jane Kardula, Ryan Chiechi, Mordechai Kot, Wouter T. M. Van Gompel, Maria Antonietta Loi","doi":"10.1002/aelm.70566","DOIUrl":"10.1002/aelm.70566","url":null,"abstract":"Incorporating tin (Sn) and lead (Pb) into metal halide perovskites is an effective strategy for reducing bandgap energy, enabling applications in the near-infrared (NIR) spectral region. Recently, we demonstrated light-emitting diodes (LEDs) with long-wavelength emission peaks exceeding 900 nm. However, non-radiative recombination at the perovskite/transport layer interface remains a key limitation to device efficiency. In this work, we introduce carbazole ammonium iodide as an interfacial modifier, forming a hydrophilic thin layer atop the PEDOT:PSS hole transport layer. This interlayer enhances surface wettability, promotes improved perovskite crystallization, and facilitates better interface contact. The resulting perovskite films exhibit extended carrier lifetimes, and the corresponding NIR LEDs show reduced leakage current densities. Additionally, we systematically investigate the influence of annealing temperature on Sn–Pb-based perovskite film formation. X-ray diffraction (XRD) analysis reveals that high-temperature annealing accelerates crystallization but promotes PbI2 formation, leading to rougher surfaces and increased crystal defects. By combining surface modification of the hole transport layer with optimized annealing conditions, we achieve a significant performance enhancement. The NIR LED with an emission peak at 988 nm exhibits a twofold increase in external quantum efficiency (EQE), improving from 0.6% to 1.3%, compared to devices using unmodified PEDOT:PSS.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70566","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148979604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Decoupled Dielectric Optimization and YbOx Contact Engineering in All-Spray-Processed Oxide Thin-Film Transistors 全喷涂氧化薄膜晶体管的解耦介电优化和YbO x接触工程

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-09-27 DOI: 10.1002/aelm.70598

Ahmed Mohamed, Nathan R. Halcovitch, Oleg V. Kolosov, Arokia Nathan, William I. Milne, George Adamopoulos

{"title":"Decoupled Dielectric Optimization and YbOx Contact Engineering in All-Spray-Processed Oxide Thin-Film Transistors","authors":"Ahmed Mohamed, Nathan R. Halcovitch, Oleg V. Kolosov, Arokia Nathan, William I. Milne, George Adamopoulos","doi":"10.1002/aelm.70598","DOIUrl":"10.1002/aelm.70598","url":null,"abstract":"Control of dielectric transport and contact energetics remains a central challenge in scalable oxide electronics. We present a decoupled optimization strategy for fully spray-processed oxide thin-film transistors with In2O3:W channels, where dielectric densification and interfacial dipole formation are engineered independently. MgO gate dielectrics reveal a transition from trap-assisted to Schottky-dominated leakage with increasing deposition temperature, suppressing defect-mediated conduction and reducing interface trap density. Transistors incorporating MgO deposited at 400°C exhibit improved electrostatic control, with electron mobility approaching 40 cm2 V−1 s−1 and subthreshold swing reduced to 0.35 V dec−1. Introduction of a thermochemically stabilized 3 nm YbOx interlayer between the source/drain electrodes and the In2O3:W channel enhances operation. Kelvin probe measurements reveal a dipole-induced work-function reduction exceeding 1.7 eV. This band-alignment engineering lowers the injection barrier and suppresses contact limitations, enabling a transition from injection-limited toward channel-dominated transport. Consequently, fully spray-processed transistors exhibit electron mobility of 94 cm2 V−1 s−1, subthreshold swing of 191 mV dec−1, and on/off current modulation ratios exceeding 107. Statistical analysis of 104 devices with identical nominal geometry further demonstrates the reproducibility of the optimized transistor characteristics across the evaluated device population. These findings establish a scalable route toward high-performance solution-processed electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metallized Electrospun Nanofiber Networks as Versatile Platforms for Ultra-Flexible and Transparent Electrodes 金属化电纺纳米纤维网络作为超柔性透明电极的通用平台

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-10-20 DOI: 10.1002/aelm.70596

Mihaela Beregoi, Iulia Corina Ciobotaru, Botta, Ionut Enculescu

{"title":"Metallized Electrospun Nanofiber Networks as Versatile Platforms for Ultra-Flexible and Transparent Electrodes","authors":"Mihaela Beregoi, Iulia Corina Ciobotaru,  Botta, Ionut Enculescu","doi":"10.1002/aelm.70596","DOIUrl":"10.1002/aelm.70596","url":null,"abstract":"Transparent electrodes are essential components of flexible optoelectronic devices, incorporating nanofibers into their design enhances the functionality, flexibility, and optical performance. In this work, electrospun freestanding gold or silver metalized networks have been produced combining two simple and industrially scalable techniques, such as electrospinning and sputtering, resulting in readily usable nanofiber electrodes. The metalized nets are thoroughly characterized in terms of morphology, composition, and optical behavior, as a function of mesh transmittance and metal layer thickness, revealing a superior figure of merit (reaching 808 for Au-coated nanofibers). The use of nylon 6/6 enhanced the robustness of the electrodes due to its intrinsic flexibility and resistance, leading to both high conductivity and transparency. Sheet resistances of approximately 3.05 Ω sq−1 for Au and 8.40 Ω sq−1 for Ag are obtained for meshes of up to 95% optical transmittance. At their highest transparency, these electrodes—once transferred onto flexible substrates—function effectively as a conductive medium capable of lighting a commercial LED. They also perform reliably as electrochemical electrodes, demonstrating their suitability for portable electrochemical devices. This fabrication strategy allows the production of large-area transparent electrodes, which can be readily integrated with portable optoelectronic/electrochemical devices, for a broad variety of applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70596","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149248757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrodeposited Piezoelectric Chitosan Films: A New Approach Toward a Scalable and Standardized Fabrication of Sensors 电沉积压电壳聚糖薄膜：一种可扩展和标准化制造传感器的新方法

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-07-13 DOI: 10.1002/aelm.70471

Valeria D'Errico, Gaia de Marzo, Antonio Qualtieri, Massimo De Vittorio

{"title":"Electrodeposited Piezoelectric Chitosan Films: A New Approach Toward a Scalable and Standardized Fabrication of Sensors","authors":"Valeria D'Errico, Gaia de Marzo, Antonio Qualtieri, Massimo De Vittorio","doi":"10.1002/aelm.70471","DOIUrl":"10.1002/aelm.70471","url":null,"abstract":"The employment of piezoelectric sensors is exponentially increasing in a wide range of applications, from automotive to healthcare, due to their characteristic combination of sensitivity, lightweight, and low cost. The increasing demand for such devices pushes to overcome current fabrication processes’ drawbacks, seeking for more eco-friendly as well as scalable approaches. In this regard, this work explores for the first time electrodeposition as a method to employ chitosan, a common bio-based polymer, for fabricating piezoelectric films. In particular, gold-coated silicon plates, acting as substrate, are immersed in a chitosan solution and subjected to different electrodeposition conditions to obtain thin films. The films are thus characterized to identify the key parameters that influence the fabrication process, influencing in turn the material structure and its piezoelectric properties. Specifically, investigation by polarized light microscopy and X-ray Diffraction is conducted to assess the semi-crystalline and partially ordered nature of chitosan, whereas Piezo-response Force Microscopy is employed to estimate the piezoelectric efficiency of the films. The optimization of the electrodeposition process made it possible to achieve a d33 piezoelectric coefficient as high as 29.52 pC N−1, while improving scalability and standardization of fabrication, thereby encouraging a green transition in the sensors’ industry.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70471","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148428906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D MXene Aerogel Frameworks With In Situ-Grown BiFeO3 for Synergistically Enhanced Thermoelectric Performance 三维MXene气凝胶框架与原位生长的bifeo3协同增强热电性能

IF 5.9 2区材料科学

Advanced Electronic Materials Pub Date : 2026-10-26 Epub Date: 2026-07-13 DOI: 10.1002/aelm.70477

Oju Kwon, Jinhyun Park, Minsu Kim, Dabin Park, Jooheon Kim

{"title":"3D MXene Aerogel Frameworks With In Situ-Grown BiFeO3 for Synergistically Enhanced Thermoelectric Performance","authors":"Oju Kwon, Jinhyun Park, Minsu Kim, Dabin Park, Jooheon Kim","doi":"10.1002/aelm.70477","DOIUrl":"10.1002/aelm.70477","url":null,"abstract":"Three-dimensional BiFeO3@MXene aerogel composites with enhanced thermoelectric performance were developed through in situ interfacial engineering. The MXene aerogel provides continuous electrical transport pathways and intrinsically low thermal conductivity, while uniformly grown BiFeO3 delivers high thermopower and modulates carrier transport via heterointerfaces. As a result, the composites exhibit a significantly enhanced Seebeck coefficient while maintaining moderate electrical conductivity and reduced thermal conductivity. The optimized composite with a BiFeO3-to-MXene mass ratio of 1:1 (B1M1) exhibited a Seebeck coefficient of 192.7 µV/K, an electrical conductivity of 181.3 S/cm, and a low thermal conductivity of 0.32 W/m∙K, leading to a maximum power factor of 612.1 µW/m∙K2 and a peak figure of merit (ZT) of 0.53 at 400 K. In addition, the composite showed good environmental stability under humid air conditions and stable thermoelectric output at the device level. This study demonstrates that in situ growth of oxide phases within a 3D MXene aerogel is an effective strategy for overcoming thermoelectric trade-offs and enabling the development of lightweight, high-performance thermoelectric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 20","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70477","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148428903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0