Advanced Electronic Materials最新文献_第2页

Hierarchical WSe2 Nanoflowers for Efficient Field Emission 高效场发射层次化WSe2纳米花

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-14 DOI: 10.1002/aelm.202500490

Filippo Giubileo, Enver Faella, Sebastiano De Stefano, Loredana Viscardi, Kimberly Intonti, Adolfo Mazzotti, Andrea Sessa, Ofelia Durante, Aniello Pelella, Gang Cheng, Cecilia Mattevi, Maurizio Passacantando, Antonio Di Bartolomeo

{"title":"Hierarchical WSe2 Nanoflowers for Efficient Field Emission","authors":"Filippo Giubileo, Enver Faella, Sebastiano De Stefano, Loredana Viscardi, Kimberly Intonti, Adolfo Mazzotti, Andrea Sessa, Ofelia Durante, Aniello Pelella, Gang Cheng, Cecilia Mattevi, Maurizio Passacantando, Antonio Di Bartolomeo","doi":"10.1002/aelm.202500490","DOIUrl":"https://doi.org/10.1002/aelm.202500490","url":null,"abstract":"This report is on the field emission properties of WSe2 nanoflowers synthesized via a solution‐phase colloidal approach, uniformly deposited on Si/SiO2 substrates. Structural and spectroscopic data confirm the formation of highly crystalline nanoflowers with predominantly 1T′ phase content and minimal surface oxidation. Field emission measurements, performed in vacuum using a nanomanipulated tungsten probe, reveal a low turn‐on voltage and a field enhancement factor ranging from ≈70 at cathode‐anode separation distance of 100 nm, to ≈10 for distance increased to 900 nm, as resulting by the analysis in the framework of the Fowler–Nordheim model. WSe2 nanoflowers offer competitive performance combined with excellent stability, attributable to their hierarchical architecture and metallic character. These results demonstrate the potential of WSe2 nanoflowers as efficient cold cathode materials for next‐generation vacuum electronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"53 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Volume Contraction Upon Resistive Switching in Cr‐Doped V2O3 as a Key Mechanism for Mottronics Applications Cr掺杂V2O3阻性开关时的体积收缩是电子应用的关键机制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-14 DOI: 10.1002/aelm.202500077

Danylo Babich, Julien Tranchant, Coline Adda, Benoit Corraze, Marie‐Paule Besland, Peter Warnicke, Daniel Bedau, Patricia Bertoncini, Jean‐Yves Mevellec, Bernard Humbert, Jonathan Rupp, Tyler Hennen, Dirk Wouters, Roger Llopis, Laurent Cario, Etienne Janod

{"title":"Volume Contraction Upon Resistive Switching in Cr‐Doped V2O3 as a Key Mechanism for Mottronics Applications","authors":"Danylo Babich, Julien Tranchant, Coline Adda, Benoit Corraze, Marie‐Paule Besland, Peter Warnicke, Daniel Bedau, Patricia Bertoncini, Jean‐Yves Mevellec, Bernard Humbert, Jonathan Rupp, Tyler Hennen, Dirk Wouters, Roger Llopis, Laurent Cario, Etienne Janod","doi":"10.1002/aelm.202500077","DOIUrl":"https://doi.org/10.1002/aelm.202500077","url":null,"abstract":"The rise of the electronic age sparked a quest for increasingly faster and smaller switches, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field initiated by an avalanche phenomena. However, the nature of the final switched state is still under debate. The spatially resolved micro‐X‐ray Diffraction imaging and micro‐Raman experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isosymmetric compressed phase without any chemical or symmetry change. This strongly suggests that the avalanche initiated resistive switching mechanism is inherited from the bandwidth‐controlled Mott‐Hubbard transition just like the laser induced insulator to metal transition recently studied in the same system. This discovery may hence ease the development of a new branch of electronics called Mottronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Manual Activation of Metal-Like Patterns in Leather for Stable Electrical Signal Transmission 手动激活皮革中的金属样图案以实现稳定的电信号传输

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-13 DOI: 10.1002/aelm.202500127

Weikang Chen, Weiyao Wu, Yifei Sun, Shuping Jia, Lingling Huang, Fengwei Huo, Ruijie Xie

{"title":"Manual Activation of Metal-Like Patterns in Leather for Stable Electrical Signal Transmission","authors":"Weikang Chen, Weiyao Wu, Yifei Sun, Shuping Jia, Lingling Huang, Fengwei Huo, Ruijie Xie","doi":"10.1002/aelm.202500127","DOIUrl":"https://doi.org/10.1002/aelm.202500127","url":null,"abstract":"Leather has emerged as a prevalent substrate in the realm of flexible electronics, owing to its distinctive breathability and robust structural stability. However, its intricate hierarchical structure presents obstacles in achieving strain-insensitive, low-resistance circuit patterns, thereby impeding the seamless integration of multifunctionality and precise electric signal transmission. In this study, eutectic gallium indium alloy (EGaIn) nanoparticles are successfully compounded with leather to create patterned metal-like leather (MLL) through manual activation, eliminating the need for a mask. The resultant MLL has an electrical conductivity of 246 S m−1, with conductive line widths ranging from 0.5 to 9 mm. Notably, after enduring 500 cycles of rigorous 150° folding and 10 000 cycles of polishing, it retains its exceptional electrical property. Furthermore, the MLL exhibits excellent air permeability and safety. These attributes empower it to detect physiological signals and maintain stable electric signal transmission. The development of MLL also lays the groundwork for the fabrication of multifunctional leather electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"215 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145288824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electropolymerized PEDOT:PSS-Based Memtransistors for Neuromorphic Computing 电聚合PEDOT：用于神经形态计算的基于pss的mem晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-13 DOI: 10.1002/aelm.202500507

Henrique Frulani de Paula Barbosa, Maroua El Abdouni, Andreas Schander, Björn Lüssem

{"title":"Electropolymerized PEDOT:PSS-Based Memtransistors for Neuromorphic Computing","authors":"Henrique Frulani de Paula Barbosa, Maroua El Abdouni, Andreas Schander, Björn Lüssem","doi":"10.1002/aelm.202500507","DOIUrl":"https://doi.org/10.1002/aelm.202500507","url":null,"abstract":"Organic electrochemical transistors (OECT) have been reckoned as promising candidates for neuromorphic computing thanks to their low power consumption, small footprint, access to a multitude of memory levels and superior spatio-temporal dynamics. However, the acquisition of non-volatile memory levels has not been straightforward, as some works require the use of auxiliary components such as resistors, preparation of composite channel materials, or surface treatments on substrates to obtain stable and reproducible results. Aiming to simplify the access to these levels in these devices, a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) electropolymerization process is implemented here to controllably deposit conducting fibers in channels of vertical OECTs. By varying the pulse time, not only the number of memory levels is tuned, but also the onset of the first memory level shift. During writing, energy expenditure per switching event is estimated to be on the nJ scale, with clear potential for further reduction. In addition, erasing of memory levels is as well demonstrated by the application of a train of pulses with increasing voltage. The advancements here presented in reproducibility of writing and erasing non-volatile memory levels in OECTs as well as the simple device structure will enable further implementation of neuromorphic hardware in the future.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"71 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145288823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Time-Domain Content-Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High-Density and Highly-Precise Distance Function Computation 基于单双极性铁电Memcapacitor的高密度高精度距离函数计算时域内容可寻址存储器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-13 DOI: 10.1002/aelm.202500421

Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi

{"title":"Time-Domain Content-Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High-Density and Highly-Precise Distance Function Computation","authors":"Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi","doi":"10.1002/aelm.202500421","DOIUrl":"https://doi.org/10.1002/aelm.202500421","url":null,"abstract":"Single ambipolar ferroelectric memcapacitor-based time-domain (TD) content-addressable memory (CAM) is proposed and experimentally demonstrated. The proposed TD CAM design effectively resolves the critical challenges of limited integration density and computational reliability in conventional ferroelectric memcapacitor-based capacitive CAMs. The band-reject-filter-shaped and symmetric capacitance-voltage characteristics with high dynamic range of a gated p-i-n diode-structured ferroelectric memcapacitor are leveraged. This CAM performs dual-edge search operations, where the Hamming distance (HD) between entry and query vectors is computed based on the modulation of the variable capacitance of cells. The propagation delay of the TD CAM output signal is linearly correlated with the computed HD, enabling improved search accuracy and sensing margin. The error-free classification of previously unseen classes in a five-way one-shot learning task indicates the feasibility of the proposed TD CAM as an associative memory within memory-augmented neural networks toward real-world implementations. Moreover, modeling results confirm that the proposed operation scheme maintains robustness against process variations and interconnect parasitics in massive arrays of highly scaled devices. Overall, the proposed TD CAM array offers exceptional compactness, linearity, and in-memory search reliability, considerably outperforming the conventional ferroelectric CAMs for HD computation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145288822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers 具有SiGeSn势垒的GeSn量子阱的高迁移率和静电特性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-09 DOI: 10.1002/aelm.202500460

Christopher R. Allemang, David Lidsky, Peter Sharma, Shang Liu, Jifeng Liu, Yunsheng Qiu, Shuiqing Yu, Tzu-Ming Lu

{"title":"High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers","authors":"Christopher R. Allemang, David Lidsky, Peter Sharma, Shang Liu, Jifeng Liu, Yunsheng Qiu, Shuiqing Yu, Tzu-Ming Lu","doi":"10.1002/aelm.202500460","DOIUrl":"https://doi.org/10.1002/aelm.202500460","url":null,"abstract":"GeSn is an emerging material with potential applications in next-generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field-effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field-effect transistors with well/barrier compositions of Ge0.945Sn0.055/Si0.03Ge0.93Sn0.04 and Ge0.9Sn0.1/Si0.017Ge0.927Sn0.056, show peak mobilities of 9000 and 19 000 cm2/Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short-range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non-equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"109 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145255299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High‐Performance Monolayer 1T‐GeO2 Transistors with Low‐Resistance Metal Contacts 具有低电阻金属触点的高性能单层1T - GeO2晶体管

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-09 DOI: 10.1002/aelm.202500407

Shuai Lang, Wei Zhang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong

{"title":"High‐Performance Monolayer 1T‐GeO2 Transistors with Low‐Resistance Metal Contacts","authors":"Shuai Lang, Wei Zhang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong","doi":"10.1002/aelm.202500407","DOIUrl":"https://doi.org/10.1002/aelm.202500407","url":null,"abstract":"As silicon‐based electronics approach their scaling limits in the post‐Moore era, 2D semiconductors offer a promising path forward. In this study, first‐principles calculations are employed, combined with quantum transport simulations to predict that monolayer 1T‐phase germanium dioxide (1T‐GeO2) is an exceptional channel material due to its favorable metal–semiconductor interface properties. Through systematic contact engineering analysis, it is revealed that conventional metals—including Au, Pt, Pd, Ag, Ti, In—form ideal Ohmic contacts with 1T‐GeO2, exhibiting ultralow contact resistances of 35.33–54.03 Ω·µm. Notably, these simulations predict that 1T‐GeO2‐based field‐effect transistors (FETs) with Pd, Au, Ti, and Pt contacts exhibit ultrahigh on‐state currents of up to 1151–3237 nA nm−1 at an 8.5 nm channel length, surpassing the 2028 performance targets set by the International Roadmap for Devices and Systems (IRDS). These performance advantages originate from the intrinsic electronic properties of the metal/1T‐GeO2 interfaces, including small electron effective mass, weak Fermi‐level pinning, moderate orbital overlaps, absence of Schottky barriers, and low tunnel barriers, which enable both efficient carrier injection and excellent channel transport. These results suggest that 1T‐GeO2 is a leading 2D semiconductor candidate for scalable, high‐performance, and energy‐efficient transistors beyond conventional silicon technology.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hardware Security for Edge Computing Via CMOS-Compatible Multi-Level Flash Memory with Hash-Based Key Generation 基于哈希密钥生成的cmos兼容多级闪存的边缘计算硬件安全性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-08 DOI: 10.1002/aelm.202500484

Kyumin Sim, Hyunseok Son, Seokjun Yu, Hae Chul Hwang, Jong Hyun Song, Seung-heon Chris Baek, Hamin Park

{"title":"Hardware Security for Edge Computing Via CMOS-Compatible Multi-Level Flash Memory with Hash-Based Key Generation","authors":"Kyumin Sim, Hyunseok Son, Seokjun Yu, Hae Chul Hwang, Jong Hyun Song, Seung-heon Chris Baek, Hamin Park","doi":"10.1002/aelm.202500484","DOIUrl":"https://doi.org/10.1002/aelm.202500484","url":null,"abstract":"Ensuring secure and energy-efficient authentication of resource-constrained devices has become a critical challenge owing to the rapid expansion of the Internet of Things (IoT) ecosystem. Physically unclonable functions (PUFs) that exploit inherent manufacturing variations to generate device-unique keys have emerged as a promising hardware-based security primitive. In this study, a PUF architecture is proposed that utilizes multi-level programming of flash memory capacitors. Reliable and reproducible binary responses are generated across multiple programmed states by extracting flat-band voltage variations from capacitance–voltage measurements. Performance is evaluated using the uniformity, P-value, inter-Hamming distance, and intra-Hamming distance, which indicated strong randomness, uniqueness, and stability. To further enhance the entropy and cryptographic strength, a hash-based message authentication code (HMAC)-based key derivation function is integrated, which transformed the PUF outputs into high-entropy pseudorandom keys. The final architecture supported key generation with zero standby power and is compatible with commercially available memory structures, thereby enabling low-cost and scalable deployment in secure IoT systems. These results highlight the potential of multi-level memory-based PUFs as a lightweight and robust solution for next-generation hardware security.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions 记忆电容器的神经形态计算：进展、挑战和未来方向

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-08 DOI: 10.1002/aelm.202500250

Nada AbuHamra, Muhammad Umair Khan, Eman Hassan, Mahmoud Al Qutayri, Baker Mohammad

{"title":"Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions","authors":"Nada AbuHamra, Muhammad Umair Khan, Eman Hassan, Mahmoud Al Qutayri, Baker Mohammad","doi":"10.1002/aelm.202500250","DOIUrl":"https://doi.org/10.1002/aelm.202500250","url":null,"abstract":"Modern applications demand immense data processing and computational power, yet conventional architectures, constrained by the Von Neumann bottleneck and data presentation, struggle to meet these requirements. This has driven the rise of neuromorphic computing, which mimics the biological nervous system through spike-encoded data and threshold-based computations for high energy efficiency. However, traditional hardware (CMOS transistors) designed for continuous computations fails to harness this potential fully, necessitating specialized neuromorphic hardware alternatives. Memristors have emerged as key components for neuromorphic hardware but suffer from high static power consumption, sneak-path currents, and reliance on selector devices. In contrast, memcapacitors provide a more efficient alternative, leveraging high resistance and charge-domain computations to overcome these limitations. This review presents a comprehensive analysis of memcapacitors for neuromorphic applications, covering capacitive switching mechanisms and materials, key hardware considerations, and recent advancements. It explores their role in artificial synapses, physical reservoir computing, and crossbar-based accelerators, highlighting their potential for scalable and low-power neuromorphic systems. Finally, key challenges and future research directions are discussed, particularly in materials engineering, device fabrication, and large-scale system integration, positioning memcapacitors as promising candidates for next-generation neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Progress in Quantum Dot Light-Emitting Diodes: Degradation Mechanisms and Strategies for Improving Device Stability and Reliability 量子点发光二极管的最新进展：提高器件稳定性和可靠性的退化机制和策略

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-08 DOI: 10.1002/aelm.202500559

Wenxin Lin, Bangxiong Kang, Paul W. M. Blom, Quan Niu, Yuguang Ma

{"title":"Recent Progress in Quantum Dot Light-Emitting Diodes: Degradation Mechanisms and Strategies for Improving Device Stability and Reliability","authors":"Wenxin Lin, Bangxiong Kang, Paul W. M. Blom, Quan Niu, Yuguang Ma","doi":"10.1002/aelm.202500559","DOIUrl":"https://doi.org/10.1002/aelm.202500559","url":null,"abstract":"Quantum dot light-emitting diodes (QLEDs) employing quantum dots (QDs) as the emissive layer have emerged as pivotal devices for next-generation solution-processed printed displays. However, they encounter significant commercialization challenges due to operational instability and unpredictable shelf-storage behavior. This instability manifests as a complex luminance evolution, characterized by an initial increase (positive aging) followed by irreversible decay (intrinsic degradation) under electrical stress. Furthermore, uncontrolled efficiency enhancement during shelf storage leads to notable performance inconsistencies across different batches. A comprehensive understanding of the various mechanisms in QLEDs during operation and storage is essential for simultaneously improving stability and reliability. Consequently, this review systematically summarizes recent advances in the mechanisms underlying operation-induced positive aging and intrinsic degradation, and shelf-storage-induced positive aging of QLEDs. It is also highlighted how cutting-edge characterization techniques, such as in situ electrical/optical spectroscopy, electrically excited transient absorption spectroscopy, and impedance spectroscopy, provide critical insights into degradation processes beyond the capabilities of conventional methods. Furthermore, corresponding strategies are concluded to mitigate aging and enhance operational lifetime, ranging from material engineering to device architecture optimization, which provide a guideline for fabricating shelf-stable QLEDs with long operational lifetimes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0