Advanced Electronic Materials最新文献

{"title":"“Understanding and Overcoming the Poor Efficiency of QLEDs Utilizing Organic Electron Transport Layers”","authors":"B. S. B. Mobarak, Hany Aziz","doi":"10.1002/aelm.202500412","DOIUrl":"https://doi.org/10.1002/aelm.202500412","url":null,"abstract":"Despite their potential advantages over widely used ZnO, the use of organic materials for the electron transport layers (ETLs) in quantum dot light-emitting devices (QLEDs) has been limited by subpar external quantum efficiency (EQE). This work investigates the root causes of this issue and approaches to address them. Contrary to expectations, electron leakage toward the hole transport layer (HTL) is identified as a plays a primary role in limiting the efficiency of these devices. By using a multilayer ETL configuration that includes electron blocking interfaces, electron leakage is reduced, and higher EQE is achieved. Using this approach, a max EQE of ≈10% in green- and red-emitting QLEDs, the highest reported for a green QLED not utilizing a ZnO ETL and among the highest in the case of red QLEDs, has been demonstrated. Tests on electron-only devices as well as transient electroluminescence measurements point to a mechanism where the formation of electron space charges within the organic ETLs may be assisting hole injection in the quantum dot layer, thus helping to reduce leakage. The findings highlight the importance of layer interface engineering and leakage control for achieving higher EQE in QLEDs, and present strategies for the effective utilization of organic ETLs in them.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Women in Emerging Organic and Hybrid Electronic Materials and Interfaces","authors":"Francesca Santoro, Thuc-Quyen Nguyen, Luisa Petti","doi":"10.1002/aelm.202500382","DOIUrl":"https://doi.org/10.1002/aelm.202500382","url":null,"abstract":"<p>The joint special issue “Women in Emerging Organic and Hybrid Electronic Materials and Interfaces” celebrates the scientific excellence, creativity, and leadership of women researchers at the forefront of organic and hybrid electronics. Launched in honor of the International Day of Women and Girls in Science, this initiative presents a compelling collection of original research and perspectives that exemplify the rigor, imagination, and interdisciplinary spirit of women-led work across materials science, physics, chemistry, and biology.</p>\u0000<p>This editorial presents a selection of recent publications selected for the Advanced Electronic Materials audience with a focus on bioelectronics, energy systems, and optoelectronics. Here, in the area of hydrogel engineering, Zhan et al. (202400214) report the synthesis of stretchable, self-healing hydrogels with integrated electrical conductivity and antibacterial properties. These materials are designed for use in soft robotics and bioelectronic sensors. Finster et al. (202400763) complement this with a review of data-driven methods, highlighting the role of computational tools and machine learning in guiding hydrogel formulation for tissue engineering and biosensing applications. Moving to plant bioelectronics, Allarà et al. review (202500080) the functional use of nanomaterials in agriculture, focusing on nutrient delivery and stress resistance. Toward engineering of new materials and device architectures, organic electrochemical transistors (OECTs) are the focus of work by Priyadarshini et al. (202400681) and Simotko et al. (202500085). Both papers propose novel strategies for modulating transistor behavior through material design, expanding their application range in bioelectronics. The work by Ramirez et al. (202500123) is instead focused on OECT facilitating fabrication processes through inkjet printable semiconducting inks development. In polymer synthesis, Lin et al. (202400756) present a series of semiconducting polymers that combine mechanical flexibility with preserved electrical performance, supporting their integration in wearable electronics.</p>\u0000<p>Energy storage advances are demonstrated by Skorupa et al. (202400761) and Alemdag et al (202400818); both highlight scalable approaches to enhancing electrode performance using structured layers and machine learning.</p>\u0000<p>Photodetector and sensing applications are addressed in papers by Prescimone et al. (202400762), Macchia et al. (202400908), and Seo et al. (202400816), each presenting device-level innovations for infrared light detection or rapid bioanalytical diagnostics. Additionally, Allarà (202500073) et al. introduce conjugated polymer nanoparticles for use in biophotonic applications, combining visible absorption with NIR emission for potential sensing and therapeutic uses. Biocompatibility and biofunctionality are further explored by Polz et al. (202400899), confirming the non-cytotoxic behavior of PM6:Y6 photovoltaic films in ph","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"53 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Progress in Sub-10 Nm Nanofabrication for Scaling Down 2D Transistors","authors":"Haichuan Li, Yongyu Wu, Dawei Gao, Kai Xu, Kun Ren, Dianyu Qi","doi":"10.1002/aelm.202500306","DOIUrl":"https://doi.org/10.1002/aelm.202500306","url":null,"abstract":"2D field-effect transistors (2D-FETs) leverage atomically thin, dangling-bond-free channels to overcome short-channel effects and surface defects in sub-10 nm nodes. However, conventional lithography hardly meets the requirement of sub-10 nm nanofabrication because of resolution limits, making the fabrication of 2D-FETs with sub-10 nm channel lengths still a significant challenge. Here, strategies of realizing 2D-FETs are reviewed with sub-10 nm channels: i) Ultraprecise nanolithography, including electron-beam lithography, cold development, and block copolymers (BCP)-based directed self-assembly (DSA); ii) Nanogap formation, leveraging stress-induced cracking, grain-boundary widening, electromigration, carbon-nanotube masking, and shadow evaporation; iii) Vertical-channel architectures, where channel length is defined by dielectric thickness in metal–insulator–metal stacks or barristor structures; iv) Self-aligned isolation, employing ultrathin film oxidation, adhesion lithography, and heterostructure undercut processes to precisely define source-drain separations. Key performance metrics are compiled and compared—contact resistance, on-state current, off-state leakage, DIBL, and subthreshold swing—across representative devices, illustrating the robust scaling immunity of 2D materials. Finally, emerging “lab-to-fab” approaches are discussed, such as edge lithography, mechanical cracking, and post-pattern modification, pointing toward scalable, low-cost manufacturing of wafer-scale sub-10 nm 2D-FETs. This outlook provides practical guidelines for future integrated circuit implementations based on 2D semiconductors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors","authors":"Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer","doi":"10.1002/aelm.202500310","DOIUrl":"https://doi.org/10.1002/aelm.202500310","url":null,"abstract":"Research on transistors with various architectures is crucial for developing high‐performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint. Simulation studies have shown that transistors fabricated using a U‐shape channel have a higher functionality as their natural geometry enables the realization of gate‐all‐around structures and long channel lengths within a small footprint. The experimental realization of the transistor is essential for exploring circuit applications. This paper presents the process integration route and the first experimental results of a U‐shape ambipolar Schottky barrier field effect transistor. Also, a detailed explanation of the challenges in fabricating a 3D transistor and the improvement steps are given. The fabricated device demonstrates highly symmetrical on‐currents for both p‐ and n‐branches. Self‐aligned contact formation and atomic force microscopy imaging are used to simplify fabrication and facilitate 3D structural monitoring. In addition, the formation of self‐aligned contacts in the proposed device architecture is significantly simplified compared to traditional 3D architectures. TCAD simulations are also performed to support the experimental findings and demonstrate the device's future potential and scalability. In conclusion, it effectively addresses the challenges of the fabrication of 3D transistors and drives innovations in device design with its silicon‐on‐insulator body.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies","authors":"Md Saifur Rahman, William J. Scheideler","doi":"10.1002/aelm.202500367","DOIUrl":"https://doi.org/10.1002/aelm.202500367","url":null,"abstract":"Liquid metal (LM) materials are redefining the design of soft and stretchable radio frequency (RF) devices by combining high electrical conductivity with mechanical reconfigurability. Recent advances demonstrate the use of LM in a wide range of RF components, including inductors, capacitors, antennas, and sensors, where geometry‐dependent electromagnetic properties enable new forms of wearable, bio‐integrated, and adaptive electronics. This review focuses on the underlying physics of RF loss in LM systems, including skin and proximity effects, magnetic and parasitic losses, and the influence of mechanical strain on resonant behavior. Beyond planar designs, emerging LM‐compatible fabrication methods such as freeze casting, 2.5D and 3D printing, and viscosity tuning are explored to construct conformal, high‐performance RF structures. Applications range from deformable Magnetic Resonance Imaging (MRI) coils and reconfigurable antennas to skin‐mounted wireless power transfer systems. The integration of LM with magnetic and dielectric materials to achieve multifunctional RF responses is also discussed. Finally, key opportunities in high‐frequency design, system‐level integration, and scalable soft manufacturing are outlined, positioning LM RF platforms as a versatile foundation for the next generation of communication, sensing, and biomedical technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-Driven Transfer Printing of Hyper-Stretchable Liquid Metal Electronics","authors":"Zhiyuan Ma, Yi Liu, Jian-Guan Hua, Yu Lei, Tao Wang, Lei Zhang, Ning Lin, Cuifang Kuang, Ruixiang Qu, Jin Huang, Yuan Jin, Biwei Deng","doi":"10.1002/aelm.202500244","DOIUrl":"https://doi.org/10.1002/aelm.202500244","url":null,"abstract":"Liquid metal (LM) alloys can conform to large deformations for flexible and stretchable electronics. The high surface energy and low wettability of LM hinder the binding with flexible substrates, making it difficult to precisely pattern LM-only electronic devices. Herein, a laser lift-off-and-fuse (LLOF) process is proposed for transfer printing LM onto flexible substrates with a patterning resolution of hundreds of microns. Liquid metal nanoparticles (LM NPs) from the donor substrate are transferred and subsequently activated on the receiver substrate by laser pulses, resulting in uniform, conductive patterns with arbitrary designs. Specifically, the LLOF method involves two steps: a transferring step by high-fluence laser pulses and an in situ activation step by low-fluence laser pulses. The LLOF method is additive and free of thermal or chemical damage to soft substrates. It brings superior quality and processability for high-precision LM flexible devices on stretchable substrates. Multiphysics numerical simulations provide a detailed demonstration of the transient vaporization of LM NPs and reveal a dynamic vapor-driven droplet transfer process. Finally, LM flexible devices with high conductivity, large ultimate strain, excellent fatigue resistance, and controllable strain conductivity are demonstrated, respectively.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"85 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145103636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrafast Dynamics of Electronic and Structural Modifications Induced by Photoexcitation in Cerium Oxide","authors":"Samuele Pelatti, Eleonora Spurio, Daniele Catone, Patrick O'Keeffe, Stefano Turchini, Giuseppe Ammirati, Fulvio Paleari, Daniele Varsano, Stefania Benedetti, Alessandro di Bona, Sergio D'Addato, Yifeng Jiang, Peter Zalden, Yohei Uemura, Hao Wang, Doriana Vinci, Xinchao Huang, Frederico Lima, Mykola Biednov, Dmitry Khakhulin, Christopher Jackson Milne, Federico Boscherini, Paola Luches","doi":"10.1002/aelm.202500429","DOIUrl":"https://doi.org/10.1002/aelm.202500429","url":null,"abstract":"Pump-probe spectroscopies utilizing X-ray free-electron lasers offer element-specific insights into the processes occurring in photocatalysts following photoexcitation, which are essential for the rational optimization of the efficiency of these materials. This study examines the dynamic evolution of the electronic and atomic structure in stoichiometric cerium oxide films following photoexcitation, employing ultrafast pump-probe X-ray absorption spectroscopy (XAS) at the Ce L₃ edge in both the near-edge and extended energy ranges using an X-ray free electron laser. The results reveal a rapid relaxation pathway occurring within the first few hundred femtoseconds, followed by the formation of an excited state with a lifetime on the order of hundreds of picoseconds. The analysis of pump-probe XAS in the extended energy range identifies a structural distortion consistent with the formation of a photoinduced small polaron state. The observed time correlation between the photoinduced electronic and structural changes further reinforces the hypothesis of photoinduced polaron formation. Constrained density functional theory simulations offer insights into the electronic modifications and structural distortions in the photoexcited material. The consequences of the observed processes on material functionality are discussed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145083907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sign Competing Sources of Berry Curvature and Anomalous Hall Conductance Humps in Topological Ferromagnets","authors":"Wojciech Brzezicki, Carmine Autieri, Mario Cuoco","doi":"10.1002/aelm.202500307","DOIUrl":"https://doi.org/10.1002/aelm.202500307","url":null,"abstract":"The use of Berry-phase concepts has established a strong link between the anomalous Hall effect (AHE) and the topological character of the Hall currents. However, the occurrence of sign competition in the Berry curvature often hinders the topological origin of the observed anomalous Hall effects. Here, a 2D topological ferromagnet is studied with coupled spin and orbital degrees of freedom to assess the anomalous Hall effects in the presence of sign-competing sources of Berry curvature. It is shown that itinerant topological ferromagnets can generally lead to topological metallic bands marked by a non-zero Chern number. It is found that the resulting Berry curvature exhibits a characteristic anisotropic profile with a non-monotonous angular dependence. The sign change of the intrinsic contribution to the anomalous Hall conductance can occur together with topological transitions or be driven by the population imbalance of the topological bands. The breaking of the inversion symmetry introduces the orbital Rashba coupling in the system. The interplay between the orbital Rashba and sign competing sources of Berry curvature leads to anomalies in the anomalous Hall conductance at values of magnetic fields for which the magnetization switches its orientation. The humps in topological ferromagnets arise when the anomalous Hall conductivity is small in absolute value and they can be detected only far from half-filling. This study can be relevant for the family of the topological 2D ferromagnets as well as Weyl ferromagnets, and can particularly account for the variety of unconventional behaviors observed in ultrathin films of SrRuO₃.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"80 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable Anomalous Hall Effect in Non‐Magnetic Topological Semimetal Cd3As2 Nanoplates","authors":"Xin‐Jie Liu, Liang Xiong, Jia‐Peng Peng, Xiang‐Long Yu, Yan‐Fei Wu, Shuo Wang, Ben‐Chuan Lin, Shou‐Guo Wang","doi":"10.1002/aelm.202500384","DOIUrl":"https://doi.org/10.1002/aelm.202500384","url":null,"abstract":"The emergence of topology has profoundly transformed condensed matter physics, driving the discovery of topological materials, including topological semimetals. Here, we report the observation of gate‐tunable anomalous Hall effect (AHE) in the non‐magnetic Dirac semimetal Cd<jats:sub>3</jats:sub>As<jats:sub>2</jats:sub>. The anomalous Hall conductivity reaches the maximum when the gate voltage is near the Dirac point. Fitting the anomalous Hall resistivity using the scaling relationship of AHE reveals that the AHE in Cd<jats:sub>3</jats:sub>As<jats:sub>2</jats:sub> is dominated by the intrinsic contribution of Berry curvature. Our results are valuable for understanding AHE in topological semimetals and could have possible potential applications in topological devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145072172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High-Bit RIS","authors":"Jun Wei Zhang, Zheng Xing Wang, Wanwan Cao, Zhen Jie Qi, Li Jie Wu, Han Qing Yang, Qun Yan Zhou, Si Ran Wang, Hui Dong Li, Jun Yan Dai, Jiang Luo, Jun Wei Wu, Jia Nan Zhang, Zhen Zhang, Qiang Cheng","doi":"10.1002/aelm.202500446","DOIUrl":"https://doi.org/10.1002/aelm.202500446","url":null,"abstract":"High-performance reconfigurable intelligent surfaces (RISs) are growing in significance for practical applications. However, current design methods typically accommodate one or two properties of RISs, and reliance on time-consuming and burdensome full-wave simulations slows down design efficiency. To overcome these limitations, we propose a general and efficient framework for the rapid design of high-performance RISs. It integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high-performance RISs. To boost efficiency, the framework leverages a multi-port network model to quickly obtain the electromagnetic (EM) responses of RIS units with various loads and employs the genetic algorithm for fast optimization of desired units. For validation, we designed a miniaturized, wideband, and high-bit RIS unit using this framework. It achieves 4-bit phase modulation, 23% relative bandwidth and a <i>λ</i>/5 size. A RIS prototype with a size of 20×10 was designed, simulated, and measured based on this unit. All results are in good agreement, demonstrating effective beam scanning from -50° to 50°. The entire design process takes only 1.2 hours and one full-wave EM simulation. This framework enables rapid high-performance RISs design, facilitating their large-scale applications in communication and radar systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}