Advanced Electronic Materials最新文献_第3页

Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400841

Sheng-Yen Zheng, Wei-Ning Kao, Yu-Hsing Chen, Yung-Hsien Wu

{"title":"Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing","authors":"Sheng-Yen Zheng, Wei-Ning Kao, Yu-Hsing Chen, Yung-Hsien Wu","doi":"10.1002/aelm.202400841","DOIUrl":"https://doi.org/10.1002/aelm.202400841","url":null,"abstract":"While n-FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the challenges in achieving desirable Ge interface quality. In this work, ferroelectric HfZrOx (HZO) is integrated with a high-k Al2O3/AlN interfacial layer (IL), along with microwave annealing (MWA), to implement Ge n-FeFET memory devices, and their memory and reliability characteristics, as well as their potential for neuromorphic applications, are extensively explored. A large memory window (MW) of 2.5 V is achieved by applying ±5 V for 5 µs while 3 bits/cell (triple-level cell) operation is demonstrated. By using a recovery scheme, excellent 1-bit/cell (single-level cell) characteristics up to 108 cycles are also obtained. The proposed IL and low thermal budget of MWA alleviate element diffusion and reduce oxygen vacancies, marking the first demonstration of Ge n-FeFET memory devices controlled by dipoles. Furthermore, short-term synaptic plasticity, such as excitatory/inhibitory postsynaptic currents (EPSC/IPSC), which are essential for neuromorphic computing is also achieved. These findings suggest that Ge n-FeFET memory devices could pave the way for high-density embedded memory applications and could further be integrated with existing Ge p-FeFET memory devices to form Ge-based FeCMOS, enabling more versatile circuit functionalities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143575478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400789

Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua

{"title":"Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor","authors":"Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua","doi":"10.1002/aelm.202400789","DOIUrl":"https://doi.org/10.1002/aelm.202400789","url":null,"abstract":"The Hodgkin-Huxley model is an accurate yet convoluted mathematical description of the complex nonlinear dynamics of a biological neuronal axon. Employing four degrees of freedom, three of which embodied by the sodium and potassium memristive ion channels, it is capable to capture the cascade of three fundamental bifurcations, specifically a Hopf supercritical, a Hopf subcritical, and a saddle-node limit cycle bifurcation, marking the life cycle from birth to extinction via All-to-None effect of an electrical spike, also referred to as Action Potential in the literature, across biological axon membranes under monotonic change in the net synaptic current. This paper recurs to powerful concepts from the Local Activity and Edge of Chaos Principle and to methods from Circuit Theory and Nonlinear Dynamics to design the first and simplest ever-reported electrical circuit, which, leveraging the peculiar Negative Differential Resistance effects in a volatile NbOx threshold switch from NaMLab, and including additionally just one capacitor and one DC current source in its minimal topology, undergoes the three-bifurcation cascade, emerging across the fourth-order Hodgkin-Huxley neuron model under monotonic current sweep, while requiring half the number of degrees of freedom, which reveals the promising potential of Memristors on “Edge of Chaos” for energy-efficient bio-inspired electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"67 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143569579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Throughput Production of Electrically Conductive Yarn (E-Yarn) for Smart Textiles

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-06 DOI: 10.1002/aelm.202400700

Jonas Marten, Nathalie Gaukel, Yunkai Hu, Yiliang Wang, Guangjie Yuan, Norbert Willenbacher

{"title":"High-Throughput Production of Electrically Conductive Yarn (E-Yarn) for Smart Textiles","authors":"Jonas Marten, Nathalie Gaukel, Yunkai Hu, Yiliang Wang, Guangjie Yuan, Norbert Willenbacher","doi":"10.1002/aelm.202400700","DOIUrl":"https://doi.org/10.1002/aelm.202400700","url":null,"abstract":"Electrically conductive yarn is essential for developing smart textiles, combining advanced functionalities with the desirable mechanical properties of traditional yarn. This study introduces an innovative method for manufacturing Nylon yarn coated with an electrically conductive, thermoplastic polymer layer. The method is based on the classical wire coating process, thus enabling rapid scale-up. The feasibility of the new approach is demonstrated by coating a Nylon yarn 250 µm in diameter with a 20 µm thermoplastic coating layer consisting of a polyamide (Platamid M1276 F, melting temperature 110–120 °C) matrix including 20 vol% silver flakes (d50 2.5 µm). The resultant resistivity of the coated yarn is ≈7.5 Ω cm−1, and essentially kept constant even after multiple bending and washing cycles simulating typical stresses during textile utilization. Additionally, the yarn is used to fabricate a pressure sensor, demonstrating a pressure sensitivity range of 1–20 kPa, a sensitivity of 10−3 kPa−1, and a response time of 224 ms. This study showcases a versatile manufacturing process for electrically conductive yarn suitable for smart textile applications. It emphasizes the potential for integrating these yarns into functional textile systems and highlights the feasibility of using existing industrial-scale coating equipment, thus facilitating rapid market integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N-Type Small-Molecule Semiconductor Implementation and Thermal Optimization

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400864

Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu

{"title":"Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N-Type Small-Molecule Semiconductor Implementation and Thermal Optimization","authors":"Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu","doi":"10.1002/aelm.202400864","DOIUrl":"https://doi.org/10.1002/aelm.202400864","url":null,"abstract":"Organic field-effect transistor-based nonvolatile memories (ONVMs) are pivotal in advanced electronic systems but often suffer from limited endurance, a characteristic that remains poorly understood across varying device structures. This work reveals a general mechanism for the deterioration of ONVM endurance related to the imperfect crystallinity of n-type small-molecule-semiconductor charge-trapping layer, N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13). Through the optimization of annealing temperatures aimed at minimizing deep traps, the endurance characteristics of pentacene-based ONVMs are greatly improved, sustaining high ION/IOFF ratios larger than 104 without notable degradation over 104 programming/erasing cycles, a marked improvement over previous configurations. This research not only advances the understanding of the physical mechanisms underlying ONVMs’ degradation but also offers a practical approach to significantly enhance the endurance of memory devices. These insights are crucial for the development of ONVMs with robust performance suitable for advanced electronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143546050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400866

Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang

引用次数: 0

Encapsulated Organohydrogel Couplants for Wearable Ultrasounds

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400961

Xiaoru Dong, Zhi Yang, Chaoran Xu, Jun Zhao, Juntong Zhu, Haokun Yi, Hui Xu, Zhuo Li

{"title":"Encapsulated Organohydrogel Couplants for Wearable Ultrasounds","authors":"Xiaoru Dong, Zhi Yang, Chaoran Xu, Jun Zhao, Juntong Zhu, Haokun Yi, Hui Xu, Zhuo Li","doi":"10.1002/aelm.202400961","DOIUrl":"https://doi.org/10.1002/aelm.202400961","url":null,"abstract":"The couplant layer that transmits sound waves to the skin is essential for ultrasound imaging. Conventional liquid-based couplants are unsuitable for wearable detectors, while polymer-based dry couplants often suffer from high acoustic attenuation. Hydrogel-based couplants possess ideal acoustic and mechanical properties; however, water evaporation restricts their application in long-term monitoring. Current strategies to improve water retention, such as encapsulating hydrogels with elastomers, typically overlook the issue of curing shrinkage. This shrinkage induces a wrinkled interface between the elastomer and hydrogel, which can cause scattering and reflection of acoustic waves, thereby compromising ultrasound quality. To address this problem, a prefabricated hydrogel is employed as a template to mitigate the curing shrinkage at the interface. In the meantime, a large amount of glycerol is added to the template to form the organohydrogel, which reduces interactions between polymer chains, further minimizing curing shrinkage and resulting in a smooth interface. Additionally, the glycerol within the organohydrogel, combined with the external encapsulation layer, enhances long-term water retention. The results demonstrate that the prepared couplants maintain stable attenuation coefficients and produce clear imaging over 8 days.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143546042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Aluminum Scandium Nitride as a Functional Material at 1000 °C

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-05 DOI: 10.1002/aelm.202400849

Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.-L. Feng, Mark Sheplak, Roozbeh Tabrizian

{"title":"Aluminum Scandium Nitride as a Functional Material at 1000 °C","authors":"Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.-L. Feng, Mark Sheplak, Roozbeh Tabrizian","doi":"10.1002/aelm.202400849","DOIUrl":"https://doi.org/10.1002/aelm.202400849","url":null,"abstract":"Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000 °C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors are fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000 °C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 to 1.2 MV cm−1, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm V−1 at 800 °C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient is calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700 °C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-04 DOI: 10.1002/aelm.202400920

Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang

{"title":"Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory","authors":"Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang","doi":"10.1002/aelm.202400920","DOIUrl":"https://doi.org/10.1002/aelm.202400920","url":null,"abstract":"From the perspective of developing low-power mobile healthcare devices capable of real-time electrogram diagnosis, memristor-based physical reservoir computing (PRC) offers a promising alternative to conventional deep neural network (DNN)-based systems. Here, real-time electrocardiogram (ECG) monitoring and arrhythmia detection are demonstrated using electrochemical random-access memory (ECRAM)-based PRC. ECRAM devices provide the millisecond-range temporal resolution required for bio-potential signals like ECG. Through material and process engineering, it is identified that higher ionic conductivity (σion) in the electrolyte layer and lower ionic diffusivity (Dion) in the channel layer are crucial for achieving non-linear dynamics and fading memory characteristics. In addition, LaF3/WOx-based ECRAM exhibits low-power operation (≈300 pW spike−1) with minimal cycle-to-cycle (CTC) variation (<10%). Arrhythmia detection tests confirmed the feasibility of real-time ECG monitoring, achieving a high classification accuracy of 93.04% with a 50-fold reduction in training parameters compared to DNN-based systems. Therefore, the developed LaF3/WOx-based ECRAM with engineering guidelines of ion dynamics makes a significant contribution to mobile healthcare systems for electrogram diagnosis.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143538763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect Density of States of Tin Oxide and Copper Oxide p-type Thin-film Transistors

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-03 DOI: 10.1002/aelm.202400929

Måns J. Mattsson, Kham M. Niang, Jared Parker, David J. Meeth, John F. Wager, Andrew J. Flewitt, Matt W. Graham

{"title":"Defect Density of States of Tin Oxide and Copper Oxide p-type Thin-film Transistors","authors":"Måns J. Mattsson, Kham M. Niang, Jared Parker, David J. Meeth, John F. Wager, Andrew J. Flewitt, Matt W. Graham","doi":"10.1002/aelm.202400929","DOIUrl":"https://doi.org/10.1002/aelm.202400929","url":null,"abstract":"The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu2O. The resulting TFT photoconduction spectra clearly resolve bandgaps that show the presence of interfacial and oxidized minority phases. In tin oxide, the SnO majority phase has a small 0.68 eV bandgap enabling ambipolar or p-mode TFT operation. By contrast, in copper oxide TFTs, an oxidized minority phase with a 1.4 eV bandgap corresponding to CuO greatly reduces the channel hole mobility at the charge accumulation region. Three distinct subgap DoS peaks are resolved for the copper oxide TFT and are best ascribed to copper vacancies, oxygen-on-copper antisites, and oxygen interstitials. For tin oxide TFTs, five subgap DoS peaks are observed and are similarly linked to tin vacancies, oxygen vacancies, and oxygen interstitials. To achieve desirable unipolar p-mode TFTs, the conduction band-edge defect density of oxygen interstitials must be sufficiently large to suppress n-mode conduction. In both channel materials, the metal vacancy peak densities near the valence band edge determine the hole concentrations, which then predict the TFT Fermi level energy, observed on-off ratios, and threshold voltages.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143538907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical Phase Separation in Blended Organic Semiconducting Films and Impact on Their Electrical and Direct X-Ray Detection Properties 混合有机半导体薄膜中的垂直相分离及其对电学和直接 X 射线探测特性的影响

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-03-02 DOI: 10.1002/aelm.202400887

Maria Elisabetta Giglio, Elisabetta Colantoni, Ilaria Fratelli, Carme Martinez-Domingo, Pedro Martinez-Zaragoza, Giulia Napolitano, Enrico Campari, Paolo Branchini, Beatrice Fraboni, Laura Basiricó, Luca Tortora, Marta Mas-Torrent

{"title":"Vertical Phase Separation in Blended Organic Semiconducting Films and Impact on Their Electrical and Direct X-Ray Detection Properties","authors":"Maria Elisabetta Giglio, Elisabetta Colantoni, Ilaria Fratelli, Carme Martinez-Domingo, Pedro Martinez-Zaragoza, Giulia Napolitano, Enrico Campari, Paolo Branchini, Beatrice Fraboni, Laura Basiricó, Luca Tortora, Marta Mas-Torrent","doi":"10.1002/aelm.202400887","DOIUrl":"https://doi.org/10.1002/aelm.202400887","url":null,"abstract":"Blends of small-molecule organic semiconductors (OSCs) and insulating polymers in Organic Field-Effect Transistors (OFETs) are mainly used to assist the solution-processing of OSCs, but they can also reduce interfacial charge traps due to vertical phase separation. Such charge traps are known to affect both the electrical response and radiation-induced charge collection capability in these devices. This study aims to optimize vertical phase separation in blend films of 1,4,8,11-tetramethyl-6,13-triethylsilylethynyl pentacene (TMTES) and polystyrene (PS) to minimize charge trap density at the semiconductor/dielectric interface, thereby enhancing the electrical performance and direct X-ray detection sensitivity in OFETs. A PS mass concentration of 33% is identified as optimal for achieving high-quality phase separation and favorable film morphology. This formulation led to films with reduced interfacial hole trap density and improved electrical and detection capacity, demonstrating a hole field-effect mobility of (1.3 ± 0.4) cm2 V−1 s−1 and X-ray sensitivity of (5.6 ± 0.2) × 103 µC Gy−1 cm−2 at low applied voltages. Remarkably, the molecular weight of PS does not significantly impact vertical phase separation, thin film morphology, or electrical properties. These findings are crucial for the development of high-performance OFETs and their application as X-ray detectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143532426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0