Advanced Electronic Materials最新文献

{"title":"Ultrahigh Detectivity Colloidal Quantum dot Avalanche Photodetectors Driven by Electron Mobility of the n-Type Layer","authors":"Changjo Kim,&nbsp;Byeongsu Kim","doi":"10.1002/aelm.70584","DOIUrl":"10.1002/aelm.70584","url":null,"abstract":"<p>Colloidal quantum dots (CQDs) are pragmatic candidates for infrared photodetectors due to their high absorption coefficient in the infrared region and solution processability. In addition, an incorporation of avalanche multiplication within the CQD region offers a route to achieve ultrahigh detectivity (<i>D^*</i>) in CQD-based infrared photodetectors. Herein, we clarify how the electron mobility of n-type layer would affect to the detection performances in the CQD-based avalanche photodetector (CQD-APD). The introduction of ZnO nanoparticles (NPs) having high electron mobility as n-type layer suppresses the electron accumulation at the CQD/n-type interfaces, thereby mitigating the defect-mediated trapping-detrapping processes and reducing the flicker noise current in our CQD-APD. Moreover, the reduction of accumulated electrons alleviates a formation of potential barrier at CQD/n-type interfaces, enabling the initiation of avalanche multiplication with lower energy threshold. Our CQD-APD with optimal n-type layer demonstrates an outstanding multiplication gain exceeding 400 and a peak detectivity of 1.4 × 10¹⁵ Jones at a wavelength of 940 nm.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70584","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149019949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green-Synthesized Bi-Doped PEI N-GQDs Enabling Long-Term Stable Silicon Heterojunction Photodetectors","authors":"Zeynep Berktaş,&nbsp;Arun Kumar,&nbsp;Salar H. Sedani,&nbsp;Mustafa Yıldız,&nbsp;İlker Yıdız,&nbsp;Antonio Di Bartolomeo,&nbsp;Elif Orhan","doi":"10.1002/aelm.70517","DOIUrl":"10.1002/aelm.70517","url":null,"abstract":"<p>In this study, BiNPs&amp;PEI N-GQDs nanocomposites were synthesized via a green approach by incorporating bismuth nanoparticles (BiNPs) into polyethyleneimine-functionalized nitrogen-doped graphene quantum dots (PEI N-GQDs). The nanocomposites were characterized using Transmission Electron Microscopy, Ultraviolet–Visible Spectroscopy, Fourier-Transform Infrared Spectroscopy, x-ray Photoelectron Spectroscopy, Ultraviolet Photoelectron Spectroscopy, and Photoluminescence Spectroscopy. The photoluminescence spectra exhibited dual emission bands at ∼2.95 eV (420 nm) and ∼2.42 eV (512 nm). When deposited onto a p-type silicon substrate, the nanocomposites formed a heterojunction with rectifying behavior and pronounced photoresponse under illumination. Current–voltage measurements revealed an illumination-induced shift of the photocurrent onset toward negative bias, suggesting photovoltaic activity. The photocurrent increased significantly with increasing illumination intensity, confirming the photoactive nature of the device. At a bias of 5 V and an illumination intensity of 240 mW cm⁻², the photodetector exhibited a responsivity of 0.16 A W⁻¹and a specific detectivity of ∼7.84 × 10¹⁰ Jones. A comparative analysis with an undoped PEI N-GQDs/p-Si device fabricated under identical conditions was conducted to assess the effect of Bi incorporation. Furthermore, measurements conducted after 24 months showed that the heterojunction retained its electrical and photodetection characteristics, confirming its long-term stability, highlighting its potential for sustainable and low-complexity optoelectronic applications.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70517","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148675265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films","authors":"Laura Mazón-Maldonado,&nbsp;Lucía Nieto Sierra,&nbsp;M. Pilar Villar Castro,&nbsp;Fernando Lloret-Vieira,&nbsp;Isidoro Ruíz-García,&nbsp;Des Gibson,&nbsp;Hadi Heidari,&nbsp;Carlos García Núñez","doi":"10.1002/aelm.70594","DOIUrl":"10.1002/aelm.70594","url":null,"abstract":"<p>Aluminum nitride (AlN) is a biocompatible piezoelectric material with energy harvesting properties. This study examines the effects of post-deposition rapid thermal annealing (RTA) on AlN thin films used in microelectromechanical systems (MEMS) resonators. RTA is performed in a N₂-purged chamber at temperatures ranging from 200°C to 1000°C on AlN thin films deposited via DC reactive magnetron sputtering. The effects of RTA temperature on the crystallinity, morphology, composition, and piezoelectric properties of AlN are systematically analysed. A practical temperature threshold is established at 400°C for AlN, above which the material properties change markedly due to rapid oxidation of the material. Up to that temperature, the grain size decreases, and the grains reorient toward the c-axis of the wurtzite phase. The piezoelectric coefficient (<i>d</i>₃₃) increased approximately 160%, and AlN/Si based MEMS showed an amplification of the electromechanical properties to 400 pm/V altogether with an output power density of ∼0.12 µW/cm³. Furthermore, this work identifies the thermal stability within the CMOS-compatible temperature range. Devices employing Ti/Pt electrodes exhibit a degradation threshold between 400°C and 600°C, where the metals undergo diffusion and form undesired bonds and structures. Meanwhile, the AlN/Ta/Nb devices remained stable for temperatures up to 600°C, indicating their suitability for integration into high-temperature MEMS fabrication.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70594","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149048876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrathin, Fully Solution-Processed P(VDF-TrFE) Piezoelectric Sensor Matrix for Electronic Skin","authors":"Ninja Kajas,&nbsp;Karem Lozano Montero,&nbsp;Leena Ukkonen,&nbsp;Veikko Surakka,&nbsp;Matti Mäntysalo","doi":"10.1002/aelm.70516","DOIUrl":"10.1002/aelm.70516","url":null,"abstract":"<p>Electronic skin (e-skin) that enables machines with human-like tactile perception requires a combination of extreme conformability, mechanical robustness, low crosstalk, and scalable, sustainable fabrication. Here, we report a fully solution-processed, metal-free 4<span></span><math>\u0000 <semantics>\u0000 <mo>×</mo>\u0000 <annotation>$times$</annotation>\u0000 </semantics></math>4 piezoelectric sensor array based on an ultrathin P(VDF-TrFE) active layer, designed for skin-conformal tactile sensing. By combining inkjet-printed polymer electrodes with a 226 nm thick spin-coated ferroelectric layer, which is the thinnest active layer reported to date for a P(VDF-TrFE) sensor array, on an ultrathin Parylene C substrate, the resulting device achieves a total thickness of approximately 4.53 <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>μ</mi>\u0000 <mi>m</mi>\u0000 </mrow>\u0000 <annotation>$umu{rm m}$</annotation>\u0000 </semantics></math>, enabling unobtrusive contact with soft and curved surfaces, including human skin. The average piezoelectric sensitivity, <span></span><math>\u0000 <semantics>\u0000 <msub>\u0000 <mi>d</mi>\u0000 <mn>33</mn>\u0000 </msub>\u0000 <annotation>$d_{33}$</annotation>\u0000 </semantics></math>, is 21 pC/N, and the voltage sensitivity ranges from 65 to 221 mV/N. Notably, array-level measurements reveal negligible mechanical crosstalk between neighboring pixels without the use of mechanical isolation structures. The observed low crosstalk is consistent with enhanced strain localization owing to the ultrathin, highly conformable device achitecture. The results highlight ultrathin, all-polymer piezoelectric arrays as a promising design strategy for scalable, sustainable, and mechanically compliant electronic skin systems.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 19","pages":""},"PeriodicalIF":5.9,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70516","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148675036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photo‐Dielectric Synaptic Plasticity in Zn‐Doped BaAl 2 O 4","authors":"Masashi Sugino, Akihide Kuwabara, Mamoru Kitaura, Kazuhiko Deguchi, Hiroki Taniguchi","doi":"10.1002/aelm.70613","DOIUrl":"https://doi.org/10.1002/aelm.70613","url":null,"abstract":"Optically reconfigurable dielectrics represent an emerging route toward low‐power, spatially addressable neuromorphic elements, yet materials capable of exhibiting stable and broadly tunable photo‐induced plasticity remain scarce. Here we report that Zn‐substituted BaAl <jats:sub>2</jats:sub> O <jats:sub>4</jats:sub> , a wide‐bandgap aluminate, hosts an unusual form of light‐controlled dielectric modulation whose magnitude and retention can be programmably engineered. Below‐bandgap excitation at 3.4 eV produces a substantial and long‐lasting increase in permittivity with negligible electronic conduction, revealing a photo‐dielectric state that can be thermally released on demand. The response amplitude is continuously adjustable across six decades through excitation intensity, enabling analog, synapse‐like plasticity within a single inorganic phase. By identifying the microscopic origin of this persistent photo‐dielectric phenomenon, we establish wide‐bandgap aluminates as a materials platform where optical excitation directly manipulates dielectric functionality. This capability provides a route to neuromorphic architectures in which learning operations are executed via photo irradiation, opening new opportunities for photoelectronic information processing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149130611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband Near‐Field Computational Microwave Imaging Enabled by Nonperiodic Dispersive Unit‐Cell Loading in a Passive Metasurface","authors":"Mohammed H. Arif, Firas Slewa Dawod, Henrik Jansen, Caner Kadıoğlu, Sayan Roy, Dirk Heberling, Renato Negra","doi":"10.1002/aelm.70606","DOIUrl":"https://doi.org/10.1002/aelm.70606","url":null,"abstract":"Computational microwave imaging can reduce reliance on dense antenna arrays and mechanical scanning by encoding scenes using spatially diverse electromagnetic masks. Metasurface apertures are attractive for producing such masks; however, many implementations rely on active tuning, cavity‐backed apertures, folded propagation paths, mechanical reconfiguration, or multiple feeds. This work presents a passive single‐layer randomized leaky‐wave metasurface aperture for broadband near‐field computational microwave imaging. The aperture uses a single feeding port and an integrated 16‐way microstrip power divider to launch guided waves along nonperiodic rows composed of six dispersive H‐shaped unit‐cell types. Eigenmode‐based analysis guides the selection of these unit‐cell types and clarifies how their nonperiodic loading produces frequency‐dependent near‐field masks through leaky‐wave radiation. The fabricated prototype integrates the aperture and feed network on a PCB, demonstrating broadband operation over 18–28 GHz, corresponding to 43.5% fractional bandwidth. Measured near‐field masks confirm broadband low‐redundancy spatial encoding. Imaging experiments demonstrate recovery of test targets and 5 mm two‐target separability in both transverse directions. These results show that static nonperiodic unit‐cell loading and broadband dispersion provide a compact, hardware‐efficient passive route to near‐field computational microwave imaging.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149130613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vertically Weft‐Knitted Smart Kinesiotapes for High‐Sensitivity, Low‐Drift Textile Strain Sensing in Close‐to‐Body Motion Monitoring","authors":"Philippa R. C. Kopelmann,Nadja Schenk,Carola Böhmer,Mareen Warncke,Hans Winger,Hung Le Xuan,Iris Kruppke,Ercan Altinsoy,Chokri Cherif","doi":"10.1002/aelm.70605","DOIUrl":"https://doi.org/10.1002/aelm.70605","url":null,"abstract":"ABSTRACT Textile‐integrated strain sensors enable close‐to‐body motion monitoring, but performance depends strongly on textile architecture. Embroidered and weft‐knitted Smart Kinesiotapes incorporating the same silver‐plated polyamide yarn are compared using five specimens per configuration under cyclic elongation in increments up to . The effects of sensor geometry, sensing‐path length and knitting orientation on base resistance, drift and relative resistance change are evaluated. Vertical orientation reduces one‐line base resistance from to , corresponding to , and four‐line base resistance from to , corresponding to . Compared with the corresponding vertical structures, the relative resistance changes of the horizontal one‐ and four‐line variants are and lower, respectively. The vertical variants provide distinct cyclic signals and close temporal agreement with the applied strain. For the embroidered sensors, the straight geometry provides the largest response, whereas extending the sensing path to four lines increases base resistance without amplifying the relative response. The one‐line vertically knitted sensor provides the most promising combination of low base resistance, high sensitivity and signal interpretability. These findings provide design guidance for body‐conforming textile strain sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149091443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust NbN‐on‐Si/SiGe Hybrid Microwave Quantum Circuits With Long‐Term Stability","authors":"Paniz Foshat,Samane Kalhor,Shima Poorgholam‐khanjari,Douglas Paul,Martin Weides,Kaveh Delfanazari","doi":"10.1002/aelm.202500845","DOIUrl":"https://doi.org/10.1002/aelm.202500845","url":null,"abstract":"ABSTRACT Large‐scale quantum computing requires superconducting microwave circuits that simultaneously exhibit ultra‐low loss, long‐term reliability, and scalable integration with semiconductor technologies. Achieving these capabilities within a CMOS‐compatible platform remains a major challenge, with microwave losses arising from material defects, interfaces, and fabrication processes limiting scalability. Here, we demonstrate robust niobium nitride (NbN) coplanar waveguide resonators fabricated on Si/SiGe quantum‐well heterostructures, establishing a hybrid superconducting–semiconducting microwave platform compatible with scalable silicon quantum technologies. Using temperature‐dependent microwave spectroscopy from the millikelvin regime to kelvin in the single‐photon limit, we systematically identify the dominant dissipation mechanisms governing device performance, including two‐level systems, quasiparticles, and interface‐related scattering, and correlate their contributions with wafer properties and fabrication routes. Despite the complexity of the hybrid architecture, the devices exhibit reproducible low‐loss microwave characteristics and maintain stable operation for more than two years without measurable degradation, demonstrating exceptional robustness under realistic operating conditions. Our analysis provides quantitative design principles for minimizing microwave loss in hybrid superconducting–semiconducting circuits while preserving compatibility with semiconductor quantum hardware. These results demonstrate the potential of NbN‐on‐Si/SiGe technology as a reliable and scalable microwave platform for monolithically integrated quantum processors, providing a practical route toward large‐scale fault‐tolerant quantum computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149092324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Harnessing the VO 2 Phase Transition for Automatic Gain Control in Transimpedance Amplifiers","authors":"Amir Gildor, Sariel Hodisan, Shahar Kvatinsky, Yoav Kalcheim","doi":"10.1002/aelm.70604","DOIUrl":"https://doi.org/10.1002/aelm.70604","url":null,"abstract":"Transimpedance amplifiers (TIAs) convert input currents into output voltages in sensor electronics. Conventional TIAs utilize fixed‐gain resistors, which saturate under high input currents, resulting in undesirable recovery times. To overcome this, volatile resistive switching devices emerge as a promising alternative, offering intrinsic automatic gain control (AGC). Among these, vanadium dioxide (VO <jats:sub>2</jats:sub> ) devices stand out for their reversible insulator–metal transition (IMT), producing abrupt, energy‐efficient resistance changes near the transition temperature ( <jats:italic> T <jats:sub>C</jats:sub> </jats:italic> ≈ 67°C). In this work, switching devices were fabricated by sputtering a VO <jats:sub>2</jats:sub> thin film and patterning ∼200 nm electrode gaps. Before TIA integration, the switching dynamics were characterized under electrical pulse excitation. Slightly exceeding the temperature‐dependent IMT threshold voltage yields fast, reproducible switching. Pump–probe measurements show that operating well below <jats:italic> T <jats:sub>C</jats:sub> </jats:italic> suppresses short‐term memory effects linked to the stochastic first‐order transition. Leveraging this, a VO <jats:sub>2</jats:sub> ‐based TIA was developed, demonstrating variable gain and AGC functionality. Furthermore, applying a constant DC current bias during switching induced self‐sustained oscillations (∼1.5 pJ per oscillation) of up to ∼60 MHz, consistent with the VO <jats:sub>2</jats:sub> thermal timescale. Overall, these results provide a detailed understanding of VO <jats:sub>2</jats:sub> switching dynamics and demonstrate their potential for enabling compact, energy‐efficient AGC in high‐speed TIAs for advanced sensing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149087555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile One‐Pot Solvothermal Synthesis of Bi 2 Te 3 Nanoplate/Te Nanorod Composites with High Seebeck Coefficients for Flexible Film‐Based Thermoelectric Generators","authors":"Keisuke Kaneko, Keisuke Uchida, Yoshiyuki Shinozaki, Hiroto Nakayama, Shuya Ochiai, Shugo Miyake, Masayuki Takashiri","doi":"10.1002/aelm.70595","DOIUrl":"https://doi.org/10.1002/aelm.70595","url":null,"abstract":"We report a one‐pot solvothermal route to Bi <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> nanoplate/Te nanorod composites, eliminating the multiple synthesis cycles required for hybrid nanostructures. Structural analyses reveal that Sb acts as a growth inhibitor, with no significant lattice incorporation detected. The Bi:Te ratio sets the phase assemblage, whereas Sb regulates crystallite size, so that finely divided 2D nanoplates and 1D nanorods form in a single step. Bulk optimization identified Sb ratios of 0.00 and 0.85 as optimal <jats:italic>n</jats:italic> ‐type and <jats:italic>p</jats:italic> ‐type compositions, balancing Seebeck coefficient against electrical conductivity. Drop‐cast films on polyimide exhibit stable thermoelectric behavior, reaching −127 µV/K ( <jats:italic>n</jats:italic> ‐type) and 323 µV/K ( <jats:italic>p</jats:italic> ‐type) at 393 K, among the highest Seebeck coefficients reported for Bi <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> ‐based flexible films. This primarily reflects the refined nanostructures produced by Sb‐mediated growth suppression, with interfacial energy filtering at most secondary. A flexible <jats:italic>p</jats:italic> ‐ <jats:italic>n</jats:italic> ‐junction thermoelectric generator (TEG) generated 6.2 mV at Δ <jats:italic>T</jats:italic> = 5.6 K (area‐averaged by infrared thermography; 7.7 K inferred from the Seebeck coefficient). Although below the ∼20 mV required by typical DC‐DC converters, the high per‐junction voltage indicates that series scaling can reach this threshold. This one‐step, voltage‐centric strategy offers a scalable route to flexible harvesters addressing the cold‐start voltage barrier of low‐power Internet of Things (IoT) electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149086119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}