Advanced Electronic Materials最新文献_第3页

Flexible Thermoelectric Generators Based on Single-Walled Carbon Nanotube/Poly(aniline-co-acrylonitrile) Composites 基于单壁碳纳米管/聚苯胺-共丙烯腈复合材料的柔性热电发生器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-28 DOI: 10.1002/aelm.202500026

Fuat Erden, Ilhan Danaci, Salih Ozbay

{"title":"Flexible Thermoelectric Generators Based on Single-Walled Carbon Nanotube/Poly(aniline-co-acrylonitrile) Composites","authors":"Fuat Erden, Ilhan Danaci, Salih Ozbay","doi":"10.1002/aelm.202500026","DOIUrl":"https://doi.org/10.1002/aelm.202500026","url":null,"abstract":"Composites of polyaniline (PANI) with carbon nanotubes (CNTs) are widely studied for thermoelectric applications. In this work, acrylonitrile (AN) is incorporated into the backbone of aniline (ANI) to form a poly(ANI-co-AN) copolymer, which is in situ wrapped around the single-walled carbon nanotubes (SWNTs) to enhance the thermoelectric performance. The idea is to address the well-known inverse relationship between the Seebeck coefficient and electrical conductivity through the carrier concentration, by using the insulating nature of AN to better control the charge transport properties. The results show that the carrier concentration is reduced without deteriorating the carrier mobility in the 70% SWNT/30% poly(90ANI-co-10AN) composites as compared to pristine SWNT/PANI. Consequently, the highest power factor (PF) reached in this work is 201 µWm−1K−2 for the 70% SWNT/30% poly(90ANI-co-10AN) composite, representing a ≈1.7-fold improvement over SWNT/PANI composites prepared under identical conditions. Further, a flexible thermoelectric generator is fabricated using SWNT/poly(ANI-co-AN) composite films, demonstrating a promising output power and power density of 117 nW and 43.3 µWcm−2, respectively, at a temperature difference of 30 K. These findings suggest that wrapping CNTs with copolymers comprising monomers of both conducting and insulating polymers can be a promising strategy to enhance the thermoelectric properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine-Learning-Assisted Understanding of Depth-Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects 机器学习辅助理解由点缺陷引起的铌酸锂的深度相关热导率

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-28 DOI: 10.1002/aelm.202400944

Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue

{"title":"Machine-Learning-Assisted Understanding of Depth-Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects","authors":"Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue","doi":"10.1002/aelm.202400944","DOIUrl":"https://doi.org/10.1002/aelm.202400944","url":null,"abstract":"Lithium niobate (LiNbO3, LN) has unique electro-optic and piezoelectric properties, making it widely used in optical devices, telecommunications, sensors, and acoustic systems. Thermal conductivity κ is a critical property influencing the performance and reliability of these applications. Point defects commonly exist in LN and can significantly reduce its κ. However, the effects of point defects on thermal transport in LN remain poorly understood. In this work, LN crystals are prepared through thermal reduction at 600–800 °C, inducing a depth-dependent distribution of oxygen vacancies (VO) that increases in concentration with increasing reduction temperature. Time-domain thermoreflectance and square-pulsed source measurements reveal a significant suppression and a notable gradient in κ, attributed to the depth-dependent distribution of VO. A machine learning potential with ab initio accuracy is developed to simulate the impact of typical point defects on thermal transport in LN, demonstrating that VO predominantly suppresses κ by affecting the transport of low-frequency phonons below 6 THz. Notably, niobium vacancies and antisite defects exhibit similar effects, whereas lithium vacancies show minimal impact. This work highlights the dominant role of VO in modulating κ and provides insights into defect engineering for advanced LN-based devices and similar ferroelectric crystals.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Elimination of Double-Slope Nonideality in C60 Field Effect Transistors C60场效应晶体管双斜率非理想性的消除

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-28 DOI: 10.1002/aelm.202500101

Xingwei Zeng, Xinyi Zhao, Jianbin Xu, Qian Miao

{"title":"Elimination of Double-Slope Nonideality in C60 Field Effect Transistors","authors":"Xingwei Zeng, Xinyi Zhao, Jianbin Xu, Qian Miao","doi":"10.1002/aelm.202500101","DOIUrl":"https://doi.org/10.1002/aelm.202500101","url":null,"abstract":"Double-slope nonideality, widely observed in organic field-effect transistors (OFETs), leads to inaccurate extraction of field-effect mobility, hindering the evaluation of new organic semiconductors and limiting OFET applications. This study presents a solution to this issue in n-type OFETs based on C60. Applying a pre-scan reversed gate-source bias (PRGSB) eliminates the double-slope nonideality. This discovery emerges serendipitously during an experiment where the source and drain connections are accidentally swapped. On the basis of the gradual formation of the active channel as the gate voltage increases, it is proposed that the double-slope nonideality stems from high-density traps in the semiconductor layer near the source electrode, presumably due to defects introduced during vacuum deposition of gold contact. The application of PRGSB injects positive charges into the dielectric layer via a large source-gate voltage. When this voltage is removed, the trapped charges act as an additional gate voltage during subsequent gate scans, filling the traps near the source and correcting the nonideality in the transfer I–V curve. These findings offer a new approach to addressing the double-slope nonideality challenge in OFET characterization and suggest an unprecedented explanation for this phenomenon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143885430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bias Induced Ambipolar Transport in Organic Heterojunction Sensors 有机异质结传感器中偏压诱导的双极性输运

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-26 DOI: 10.1002/aelm.202400865

Abhishek Kumar, Charles H. Devillers, Rita Meunier‐Prest, Dimitri Sabat, Eric Lesniewska, Marcel Bouvet

{"title":"Bias Induced Ambipolar Transport in Organic Heterojunction Sensors","authors":"Abhishek Kumar, Charles H. Devillers, Rita Meunier‐Prest, Dimitri Sabat, Eric Lesniewska, Marcel Bouvet","doi":"10.1002/aelm.202400865","DOIUrl":"https://doi.org/10.1002/aelm.202400865","url":null,"abstract":"Interface engineering in organic heterostructures is an important approach to tuning the characteristics of organic electronic devices and improving their performances in applications, such as gas sensing. Herein, organic heterostructures containing, a polyporphine (pZnP‐1), perfluorinated copper phthalocyanine (Cu(F16Pc)), and lutetium bis‐phthalocyanine (LuPc2) are synthesized by a combination of electrochemical and PVD methods for investigation of charge transport and ammonia (NH3) sensing application. pZnP‐1 is synthesized by controlled oxidative electropolymerization and reveals a rough surface, which influences the electrical nature of its interface with the phthalocyanine. The electrical properties of the heterojunction devices reveal distinct interfacial and bulk charge transport properties, which are modulated by the thickness of pZnP‐1 and the external electric field. Indeed, the heterojunction device containing a thin film of pZnP‐1 displays n‐type behavior at low bias and p‐type nature at higher bias; i.e., an ambipolar behavior, in which ambipolarity is triggered by the external electric field. On the other hand, the heterojunction device having a thick film of pZnP‐1 exhibits p‐type behavior at all the studied biases. Investigation of NH3 sensing properties of the heterojunction devices highlights the advantages of introducing pZnP‐1 in the heterostructures, which enhances the sensitivity, stability, repeatability, and humidity tolerance of the sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Control of Vortex Motion in Nanoscale Superconductors 纳米超导体涡旋运动的热控制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-25 DOI: 10.1002/aelm.202400946

Björn Niedzielski, Jamal Berakdar

引用次数: 0

Exploring the Bioengineering Potential of CoFe2O4-BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient 探索CoFe2O4-BaTiO3纳米颗粒的生物工程潜力：深入研究磁电系数

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-25 DOI: 10.1002/aelm.202500014

Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani

{"title":"Exploring the Bioengineering Potential of CoFe2O4-BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient","authors":"Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani","doi":"10.1002/aelm.202500014","DOIUrl":"https://doi.org/10.1002/aelm.202500014","url":null,"abstract":"Magnetoelectric (ME) materials, especially in the form of core–shell nanoparticles, have gained increasing attention for their potential in bioengineering applications. In particular, cobalt ferrite (CoFe2O4) and barium titanate (BaTiO3) core–shell nanoparticles stand out due to their strong Magneto-Electric (ME) properties. This perspective examines the evolution of the state of the art on CoFe2O4-BaTiO3 core–shell ME nanoparticles (MENPs), describing different methodologies adopted to measure their ME coefficient (α), the main critical parameter correlated with their magnetoelectric behavior. The analysis reveals a broad range of ME coefficients measured, mostly due to heterogeneous measurement techniques and samples. Recently, advancements in measurement technologies, such as scanning tunneling microscopy and piezoresponse force microscopy, have enabled more precise characterizations of these nanoparticles at a single particle scale, leading to the measurement of more precise ME coefficients. A systematic discussion of the recent advancements in the field and future research directions is here outlined, with a particular focus on the role of computational simulations to further deepen the understanding of the ME effects in the development of next-generation multifunctional biomedical devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ecofriendly Printing of Silver Nanowires with Cellulose Binder for Highly Robust Flexible Electronics 高鲁棒柔性电子用纤维素粘结剂环保印刷银纳米线

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-24 DOI: 10.1002/aelm.202400983

Yuxuan Liu, Ping Ren, Li Yang, Brendan O'Connor, Jingyan Dong, Yong Zhu

引用次数: 0

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices 基于SnO2/SnS2异质结存储器件的电阻开关机制研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202500037

WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian

{"title":"Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices","authors":"WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian","doi":"10.1002/aelm.202500037","DOIUrl":"https://doi.org/10.1002/aelm.202500037","url":null,"abstract":"This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction. The results indicate that as the annealing temperature increases, the composition of the SnS2 based thin film changes while the cycle-to-cycle stability of the device improved. The thin film is examined by X-ray photoelectron spectroscopy (XPS), scanning electronic microscopy (SEM) and atomic force microscopy (AFM), which proves the formation of SnO2/SnS2 heterojunction. Devices with SnO2/SnS2 heterojunction exhibited lower operating voltages and more uniform resistive switching behavior. The RRAM can be repeatedly and consistently switched between a high-resistance state and a low-resistance state over 1000 cycles, with a long data retention time of > 4 × 104 s at room temperature. Meanwhile, this study explores the relationship between this type of resistive memory and the neuromorphic simulation of the human brain. SnO2/SnS2 heterojunction with 224 PJ set power at 0.4 V pulse shows excellent resistive memory characteristics. This study provides a vital reference for high-performance and long-lifespan heterojunction memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"138 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mesoporous Carbon Sphere-Enhanced Flexible Pressure Sensor with Superior Linearity and Wide Range for Wearable Health Monitoring 介孔碳球增强柔性压力传感器，具有优越的线性和宽范围，可穿戴健康监测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202400985

Tianyu Zhu, Wanqing Xu, Chenlin Peng, Lan Sh, Limin Wu

引用次数: 0

Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures (Adv. Electron. Mater. 5/2025) 基于夹层小分子和绝缘层结构的晶体管隧穿介电厚度依赖行为。板牙。5/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-04-23 DOI: 10.1002/aelm.202570014

Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo

引用次数: 0