Advanced Electronic Materials最新文献_第3页

MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators MBE生长的ScAlN - on - Si薄膜：增强扩展模式BAW谐振器的平面内结晶度

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-06 DOI: 10.1002/aelm.202500217

Shubham Mondal, Shaurya S. Dabas, Garrett Baucom, Jae Hun Kim, Md Mehedi Hasan Tanim, Kaitian Zhang, Hongping Zhao, Honggyu Kim, Roozbeh Tabrizian, Zetian Mi

{"title":"MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators","authors":"Shubham Mondal, Shaurya S. Dabas, Garrett Baucom, Jae Hun Kim, Md Mehedi Hasan Tanim, Kaitian Zhang, Hongping Zhao, Honggyu Kim, Roozbeh Tabrizian, Zetian Mi","doi":"10.1002/aelm.202500217","DOIUrl":"https://doi.org/10.1002/aelm.202500217","url":null,"abstract":"Piezoelectric thin films are playing an increasingly important role in micro‐electromechanical systems (MEMS) as the expansion of 5G networks and the rise of Internet of Things (IoT) technologies fuel the need for smaller, more reliable, and energy‐efficient sensors and actuators. Alloying Aluminum Nitride (AlN) with Scandium (Sc) is a promising approach to enhance piezoelectric properties in wurtzite semiconductors. However, investigations on ScAlN piezo‐on‐Silicon (Si) have been largely focused on sputtered materials, which often limit resonators to operate in the out‐of‐plane mode, resulting in limited Q. In this study, the piezoelectric properties of ScAlN thin films are reported, which are epitaxially grown on AlN‐buffered Si (111) with enhanced in‐plane crystallinity and a high piezoelectric modulus d33 up to 25.7 pC/N for Sc composition of 30%. This enables us to demonstrate extensional mode ScAlN‐on‐Si bulk acoustic wave (BAW) resonators with an ultra‐high Q of ≈97k at 70.28 MHz, resulting in a frequency‐Q product of ≈6.86 × 1012, indicating low energy loss and high frequency precision, making it ideal for emerging wireless technologies with extremely low latency demands.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"100 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145228908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsic Strain‐Driven Topological Evolution in SrRuO3 via Flexural Strain Engineering 基于弯曲应变工程的SrRuO3内禀应变驱动拓扑演化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-06 DOI: 10.1002/aelm.202500364

Liguang Gong, Hongping Jiang, Bin Lao, Xuan Zheng, Xuejiao Chen, Zhicheng Zhong, Yan Sun, Xianfeng Hao, Milan Radovic, Run‐Wei Li, Zhiming Wang

{"title":"Intrinsic Strain‐Driven Topological Evolution in SrRuO3 via Flexural Strain Engineering","authors":"Liguang Gong, Hongping Jiang, Bin Lao, Xuan Zheng, Xuejiao Chen, Zhicheng Zhong, Yan Sun, Xianfeng Hao, Milan Radovic, Run‐Wei Li, Zhiming Wang","doi":"10.1002/aelm.202500364","DOIUrl":"https://doi.org/10.1002/aelm.202500364","url":null,"abstract":"Strain engineering offers a powerful route to tailor topological electronic structures in correlated oxides, yet conventional epitaxial strain approaches introduce extrinsic factors such as substrate‐induced phase transitions and crystalline quality variations, which make the unambiguous identification of the intrinsic strain effects challenging. Here, a flexural strain platform is developed based on van der Waals epitaxy and flexible micro‐fabrication, enabling precise isolation and quantification of intrinsic strain effects on topological electronic structures in correlated oxides without extrinsic interference. Through strain‐dependent transport measurements of the Weyl semimetal SrRuO3, a significant enhancement of anomalous Hall conductivity (AHC) by 21% is observed under a tiny strain level of 0.2%, while longitudinal resistivity remains almost constant—a hallmark of intrinsic topological response. First‐principles calculations reveal a distinct mechanism where strain‐driven non‐monotonic evolution of Weyl nodes across the Fermi level, exclusively governed by lattice constant modulation, drives the striking AHC behavior. This work not only highlights the pivotal role of pure lattice strain in topological regulation but also establishes a universal platform for designing flexible topological oxide devices with tailored functionalities.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145228907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Progress in Sub-10 Nm Nanofabrication for Scaling Down 2D Transistors (Adv. Electron. Mater. 16/2025) 用于缩小二维晶体管尺寸的亚10nm纳米工艺研究进展[j]。板牙。16/2025)

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-05 DOI: 10.1002/aelm.70103

Haichuan Li, Yongyu Wu, Dawei Gao, Kai Xu, Kun Ren, Dianyu Qi

引用次数: 0

Pushing Biomolecule Detection Limit With Graphene Field-effect Transistor Biosensors 石墨烯场效应晶体管生物传感器推动生物分子检测极限

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-03 DOI: 10.1002/aelm.202500368

Co Dang Pham, Quang Thang Trinh, Jun Zhang, Nam-Trung Nguyen, Tuan-Khoa Nguyen

{"title":"Pushing Biomolecule Detection Limit With Graphene Field-effect Transistor Biosensors","authors":"Co Dang Pham, Quang Thang Trinh, Jun Zhang, Nam-Trung Nguyen, Tuan-Khoa Nguyen","doi":"10.1002/aelm.202500368","DOIUrl":"https://doi.org/10.1002/aelm.202500368","url":null,"abstract":"Ultrasensitive detection of biomarkers at trace levels is essential for early disease diagnoses, preventing further complications and treatment burdens. Advances in material science, micro/nano engineering, and biology have enabled a new generation of point-of-care biosensor devices that rival lab-based diagnostics while remaining portable for wearable or even implantable applications. Graphene, a 2D semiconductor, has gained significant attention as a sensing material due to its large surface area and exceptional electronic properties. These features support the binding of bio-recognition elements and enable signal transduction at the single-molecule level. Among various sensing platforms, graphene-based field-effect transistors (GFETs) stand out for their label-free, real-time detection and simple readout, making them ideal for wearable diagnostics. GFET biosensors hold transformative potential for personalized healthcare by detecting a broad range of biomarkers at ultra-low detection limits. This paper presents a concise overview of recent advancements in ultrasensitive GFET-based biomolecule sensing, with a focus on key factors governing the sensitivity, strategies for producing high-mobility graphene, device engineering, and emerging methods to push the limit of detection and specificity. Finally, emerging trends and future directions for GFETs in wearable diagnostic technologies is highlighted.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145209698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiferroicity in Calcium Manganate via Strain Engineering 应变工程研究锰酸钙的多铁性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-02 DOI: 10.1002/aelm.202500346

Ye Yuan, Zhen Yang, Cheng Ma, Kui‐juan Jin, Shuai Xu, Er‐jia Guo, Chen Ge, Can Wang, Xiulai Xu, Meng He, Guozhen Yang

{"title":"Multiferroicity in Calcium Manganate via Strain Engineering","authors":"Ye Yuan, Zhen Yang, Cheng Ma, Kui‐juan Jin, Shuai Xu, Er‐jia Guo, Chen Ge, Can Wang, Xiulai Xu, Meng He, Guozhen Yang","doi":"10.1002/aelm.202500346","DOIUrl":"https://doi.org/10.1002/aelm.202500346","url":null,"abstract":"Multiferroics have attracted intense interest due to their potential applications in multifunctional devices and high‐density storage for the next‐generation electronic technologies, owing to their multiple ferroic orders, especially ferroelectric and magnetic ones. However, the symmetry constraints imposed by magnetic point groups and the electronic configuration conflicts in d orbitals between ferroelectricity and magnetism hinder the coexistence of ferroelectric and magnetic orders, leading to a scarcity of multiferroics. In this work, multiferroicity is achieved in the non‐ferroelectric magnet Calcium Manganate (CaMnO3) through tensile‐strain engineering. The ferroelectricity with a Curie temperature up to 45 K is evidenced by the polarization‐electric field (P‐E) hysteresis loops, which also suggest that the spontaneous polarization aligns along [100] and [010] directions. Meanwhile, the magnetization below 125 K is confirmed by both the magnetization hysteresis loops and the temperature‐dependent magnetization measurements, providing compelling evidence for the multiferroic nature in the tensile‐strained CaMnO3 films. In addition, an abrupt increase in magnetization is found below 10K, indicating the establishment of a new ferromagnetic order due to the suppression of thermal fluctuations. These findings highlight strain engineering as a universal strategy to induce multiferroicity in non‐ferroelectric magnets.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145203087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer 基于新型等靛蓝基共轭聚合物的非氯化溶剂全溶液加工ofet

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-10-01 DOI: 10.1002/aelm.202500375

Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld

{"title":"All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer","authors":"Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202500375","DOIUrl":"https://doi.org/10.1002/aelm.202500375","url":null,"abstract":"Here, an Isoindigo (IID) comprised with Naphthodithiophene (NDT)‐based low band‐gap donor–acceptor copolymer semiconductor is designed, synthesized, and investigated. The newly reported polymer provides good solubility in a range of halogenated and non‐halogenated solvents due to the attachment of long branched alkyl chains on the Isoindigo core. After optimizing the performance of organic field effect transistors (OFETs) through the use of high‐boiling‐point chlorinated solvents, A similar approach is followed to realize transistors without the need of using halogenated solvents as a green approach. Well‐working transistors are shown with mobility values in a similar range as obtained for OFETs with films prepared from halogenated solvents, while significantly reducing the environmental impact. Finally, all‐solution‐processed, flexible OFETs are prepared without the use of halogenated solvents, which is an important step in the view of potential large area production of flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145203088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution‐Processed Bi2S3 Nanostructures for Flexible Memory and Neuromorphic Computing 溶液处理的Bi2S3纳米结构用于灵活记忆和神经形态计算

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-30 DOI: 10.1002/aelm.202500370

Sayali Shrishail Harke, Omesh Kapur, Peng Dai, Tongjun Zhang, Bingkai Ding, Bohao Ding, Ruomeng Huang, Chitra Gurnani

{"title":"Solution‐Processed Bi2S3 Nanostructures for Flexible Memory and Neuromorphic Computing","authors":"Sayali Shrishail Harke, Omesh Kapur, Peng Dai, Tongjun Zhang, Bingkai Ding, Bohao Ding, Ruomeng Huang, Chitra Gurnani","doi":"10.1002/aelm.202500370","DOIUrl":"https://doi.org/10.1002/aelm.202500370","url":null,"abstract":"The rapid advancement of wearable computing and edge AI technologies is driving the need for low‐temperature, flexible, and neuromorphic‐compatible electronic materials. In this work, the successful low‐temperature deposition of Bi2S3 thin films via an in situ solvothermal method using the single‐source precursor (SSP) [Bi(S2P(OC3H₇)2)3] is reported. This solution‐processed approach enables the formation of high‐quality, crystalline, and stoichiometric Bi2S3 films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi2S3‐based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long‐term synaptic plasticity, achieving high learning accuracy. These findings establish SSP‐derived Bi2S3 films as a promising material platform for next‐generation flexible neuromorphic computing and memory technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization 28Si聚焦离子束制备平面高富集硅及其实验优化

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-29 DOI: 10.1002/aelm.202500233

Maddison Coke, Mason Adshead, Ravi Acharya, Kexue Li, Katie L. Moore, David N. Jamieson, Richard J. Curry

引用次数: 0

Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs 非平衡态氮峰退火晶化增强实现了高迁移率和高可靠性

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-29 DOI: 10.1002/aelm.202500399

Kuo Zhang, Jiayi Wang, Ziheng Bai, Chunyu Zhang, Tong Yu, Yang Xu, Nannan You, Rui Chen, Zhicheng Wu, Di Geng, Guanhua Yang, Shengkai Wang, Ling Li, Ming Liu

{"title":"Nonequilibrium Nitrogen Spike Annealing for Crystallization Enhancement Achieves High Mobility and Reliability in IGO TFTs","authors":"Kuo Zhang, Jiayi Wang, Ziheng Bai, Chunyu Zhang, Tong Yu, Yang Xu, Nannan You, Rui Chen, Zhicheng Wu, Di Geng, Guanhua Yang, Shengkai Wang, Ling Li, Ming Liu","doi":"10.1002/aelm.202500399","DOIUrl":"https://doi.org/10.1002/aelm.202500399","url":null,"abstract":"Poly-crystallized In-Ga-O (IGO) semiconductor has the potential for application in high-density memory and back end of line (BEOL) integration with CPU. Since the development of In2O3-based multi-cation oxides, i.e., IGZO, such material is very difficult to be poly-crystallized under the limitation of BEOL temperature. Here, a novel Nitrogen-Spike Annealing (NSA) method is demonstrated, this nonequilibrium annealing process utilizes a transient high temperature to induce crystallization while reducing the overall thermal budget. During NSA, the O atoms are more intended to bond with Ga, resulting in a more rigid framework that stabilizes the O atoms. The crystal orientation of the NSA treated IGO film is more concentrated compared with the conventional equilibrium annealed one. Furthermore, poly-IGO thin-film transistors (TFTs) with high crystallinity and more centered crystal orientation are demonstrated through material characterization. Electrical characteristics revealed that the poly-IGO TFT exhibits high mobility of ≈86.2 cm2 V s−1 and enhanced reliability after NSA treatment. These findings will advance the design and improvement of oxide semiconductor memory applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145183246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors 仅用两个动态记忆电阻器的神经信息处理和时间序列预测

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-09-28 DOI: 10.1002/aelm.202500353

Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter

{"title":"Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors","authors":"Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter","doi":"10.1002/aelm.202500353","DOIUrl":"https://doi.org/10.1002/aelm.202500353","url":null,"abstract":"Memristive devices are commonly benchmarked by the multi‐level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical properties of memristors, such as the tailorable response times arising from the exponential voltage dependence of the resistive switching speed remain largely unexploited. Here, an information processing scheme which fundamentally relies on the latter is proposed. Simple dynamical memristor circuits capable of solving complex temporal information processing tasks are realized. A scheme is presented in which a single non‐volatile meristor and a series resistor can perform temporal pattern recognition tasks, such as the discrimination of sub‐threshold and super‐threshold voltage pulses, or the identification of neural spikes buried in high noise. By coupling to an oscillator circuit of a volatile Mott memristor, a complete neural circuit is realized that fires an output pulse upon signal detection and resets itself in a fully autonomous manner. Furthermore, a time series prediction circuit is implemented using a dynamic layer of only two memristors and a readout layer based on the linear combination of their output signals. This scheme can learn the operation of an external dynamical system and predict its output with high accuracy.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145182839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0