Advanced Electronic Materials最新文献

{"title":"A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High-Bit RIS","authors":"Jun Wei Zhang, Zheng Xing Wang, Wanwan Cao, Zhen Jie Qi, Li Jie Wu, Han Qing Yang, Qun Yan Zhou, Si Ran Wang, Hui Dong Li, Jun Yan Dai, Jiang Luo, Jun Wei Wu, Jia Nan Zhang, Zhen Zhang, Qiang Cheng","doi":"10.1002/aelm.202500446","DOIUrl":"https://doi.org/10.1002/aelm.202500446","url":null,"abstract":"High-performance reconfigurable intelligent surfaces (RISs) are growing in significance for practical applications. However, current design methods typically accommodate one or two properties of RISs, and reliance on time-consuming and burdensome full-wave simulations slows down design efficiency. To overcome these limitations, we propose a general and efficient framework for the rapid design of high-performance RISs. It integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high-performance RISs. To boost efficiency, the framework leverages a multi-port network model to quickly obtain the electromagnetic (EM) responses of RIS units with various loads and employs the genetic algorithm for fast optimization of desired units. For validation, we designed a miniaturized, wideband, and high-bit RIS unit using this framework. It achieves 4-bit phase modulation, 23% relative bandwidth and a <i>λ</i>/5 size. A RIS prototype with a size of 20×10 was designed, simulated, and measured based on this unit. All results are in good agreement, demonstrating effective beam scanning from -50° to 50°. The entire design process takes only 1.2 hours and one full-wave EM simulation. This framework enables rapid high-performance RISs design, facilitating their large-scale applications in communication and radar systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Air Stability of Organic Thin-Film Transistors with Thiol-Functionalized Gold Bottom Source and Drain Contacts","authors":"Tobias Wollandt, Sabrina Steffens, Karla Cordero-Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk","doi":"10.1002/aelm.202500298","DOIUrl":"https://doi.org/10.1002/aelm.202500298","url":null,"abstract":"The contact resistance and the intrinsic channel mobility of p-channel and n-channel organic thin-film transistors (TFTs) based on four different vacuum-deposited small-molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact-semiconductor interface. Across all investigated parameters, DPh-DNTT is found to yield the most air-stable TFTs among the semiconductors investigated here.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compositionally Tunable 2D PtSexTey Alloys Synthesized via Thermally Assisted Conversion for Mid-Wave Infrared Photodetection","authors":"Dongki Shin, Yunjin Lee, Jiyoung Kim, Youngjo Choi, Woong Kim","doi":"10.1002/aelm.202500344","DOIUrl":"https://doi.org/10.1002/aelm.202500344","url":null,"abstract":"Mid-wave infrared (MWIR) photodetectors play a crucial role in thermal imaging, environmental monitoring, and medical diagnostics due to their ability to detect subtle thermal signatures. However, advancements in this field have been limited by the scarcity of suitable semiconductor materials and the high cost of epitaxial growth techniques. 2D materials have emerged as a promising new class of candidates for MWIR photodetectors, offering tunable optical properties and compatibility with scalable, cost-effective fabrication methods. While band gap tuning in the MWIR range has thus far been achieved through thickness modulation and defect engineering, compositional engineering remains largely unexplored. Here, broadband band gap tuning across the MWIR spectrum is demonstrated via compositional engineering in a 2D PtSe<i>_x</i>Te<i>_y</i> system synthesized through direct thermally assisted conversion. Optical characterization reveals a strong correlation between composition and band gap. As the Te content increases and the band gap narrows, a photodetector based on a p-type PtSe<i>_x</i>Te<i>_y</i>/n-type Si heterojunction exhibits significantly enhanced response to 800 °C blackbody radiation, indicating improved MWIR detection capability. These findings underscore the potential of compositional engineering as a straightforward and effective strategy for developing next-generation MWIR photodetectors for advanced optoelectronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"InGaZnO-Based Thin-Film Thermistors on PEEK Fabric for Green Smart Textiles","authors":"Albert Heinrich Lanthaler, Sahira Vasquez, Riccardo Zamboni, Michael Haller, Luisa Petti, Niko Münzenrieder, Giuseppe Cantarella","doi":"10.1002/aelm.202500146","DOIUrl":"https://doi.org/10.1002/aelm.202500146","url":null,"abstract":"Electronic textiles (e-textiles) have recently achieved outstanding results, allowing fast and reliable systems to be directly integrated into fabrics and threads. However, based on the environmental impact of these systems, the improvement of their limited End-of-Life (EoL) strategies is nowadays a major challenge. For this reason, the development of a circular technology for the realization of e-textiles, aiming at waste reduction and support of materials recycling, is highly required. Herein, an innovative and fully recyclable integration of thin-film electronics on a biocompatible polyether ether ketone (PEEK) fabric is presented. Specifically, three different configuration of InGaZnO-based thin-film thermistors are investigated, comparing their capabilities and sustainability. The devices are characterized over a temperature range from 25 to &lt;span data-altimg=\"/cms/asset/72bf4860-8c0f-4914-9c19-d6e11a9dda08/aelm70069-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"48\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm70069-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3,4\" data-semantic-content=\"5,6\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"60 Superscript ring Baseline normal upper C\" data-semantic-type=\"infixop\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"integer\" data-semantic-type=\"number\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"7\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-msup data-semantic-children=\"1,2\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"unknown\" data-semantic-type=\"superscript\"&gt;&lt;mjx-mspace data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\" style=\"width: 0.16em;\"&gt;&lt;/mjx-mspace&gt;&lt;mjx-script style=\"vertical-align: 0.363em;\"&gt;&lt;mjx-mo data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-script&gt;&lt;/mjx-msup&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"7\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;/mjx-mrow&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altim","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"323 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145068484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning","authors":"Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho","doi":"10.1002/aelm.202500361","DOIUrl":"https://doi.org/10.1002/aelm.202500361","url":null,"abstract":"Optoelectronic neuromorphic devices promise real‐time processing of unstructured biometric data, yet challenges remain in achieving material non‐toxicity and long‐term synaptic retention, along with a clear understanding of the underlying mechanisms. Here, an optical charge trap memory (CTM) is reported based on a graphene/ZnO nanoparticle (GZO) heterostructure that addresses these limitations through its large photoconductive gain and abundant charge trap sites. Distinct from previous nanoparticle/graphene photodetectors, the work leverages interfacial trap‐mediated processes to implement stable optoelectronic neuromorphic functionalities, including long‐term potentiation, retention, and efficient relearning. The GZO CTM exhibits robust charge trapping characteristics, with charge retention exceeding 54 h at the e<jats:sup>−1</jats:sup> loss point, attributed to interfacial trap states and a substantial energy barrier at the GZO interface. These trapped charges enable stable potentiation and efficient memory reprogramming, requiring significantly fewer pulses after partial memory loss. Furthermore, artificial neural network simulations based on GZO CTM characteristics demonstrate rapid convergence and near‐unity accuracy in handwriting recognition tasks within 20 training epochs, even under noise conditions. This study highlights the potential of trap‐engineered GZO heterostructures as scalable, energy‐efficient platforms for biocompatible neuromorphic computing, particularly in wearable systems requiring stable optical memory and real‐time signal processing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145072173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling","authors":"Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia","doi":"10.1002/aelm.202500373","DOIUrl":"https://doi.org/10.1002/aelm.202500373","url":null,"abstract":"Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics‐based compact model for analog filamentary Conductive‐Metal‐Oxide (CMO)/HfO<jats:sub>x</jats:sub> ReRAM, capable of reproducing switching characteristics over a broad range of operating conditions. Compared to the state‐of‐the‐art, the model extends the dynamic interplay between ion migration and electron hopping, while also accounting for parasitic resistive elements. Simulations of various voltage inputs are tested to reproduce quasi‐static <jats:italic>I–V</jats:italic> curves, SET switching kinetics under single‐pulse programming conditions, and analog accumulative conductance modulation upon bipolar identical pulse streams. Additional simulations reveal the physical criterion underlying the stabilization of the CMO/HfO<jats:sub>x</jats:sub>‐based ReRAM memory state around the equilibrium point, namely symmetry point, under pulsing conditions when a fading memory mechanism emerges. Building upon the evidence of such equilibrium stabilization under pulsing and quasi‐static conditions, a procedure is established to visualize and map equilibrium memory states across different input domains. The physical model supports design optimization of switching behavior for analog neuromorphic systems and non‐volatile memory architectures. It also enables accurate integrated circuit simulations with CMO/HfO<jats:sub>x</jats:sub>‐based ReRAM technology.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3","authors":"Matteo Fettizio, Can Onur Avci, Roberto Mantovan, Emanuele Longo","doi":"10.1002/aelm.202500280","DOIUrl":"https://doi.org/10.1002/aelm.202500280","url":null,"abstract":"Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques. Recent studies have validated the topological properties of <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub> thin films grown via metal–organic chemical vapor deposition on 4‐inch wafers. To advance <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>‐based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin‐orbit torque (SOT) and magnetoresistive responses in <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub>, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10<jats:sup>6</jats:sup> . These findings underscore the potential of the <jats:italic>Sb</jats:italic><jats:sub>2</jats:sub><jats:italic>Te</jats:italic><jats:sub>3</jats:sub> TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors","authors":"Shuai Lang, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong","doi":"10.1002/aelm.202500220","DOIUrl":"https://doi.org/10.1002/aelm.202500220","url":null,"abstract":"Complementary metal‐oxide‐semiconductor (CMOS) technology faces challenges in achieving high performance at ultrashort gate lengths. 2D semiconductors, such as monolayer BX (X = P, As, Sb), offer promise due to their high carrier mobilities for both electrons and holes. This study employs Density Functional Theory (DFT) and the Nonequilibrium Green's Function (NEGF) method to evaluate monolayer BX as channel materials for sub‐10 nm gate‐length metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and tunnel field‐effect transistors (TFETs). Results show that monolayer BP and BAs MOSFETs exhibit high on‐state currents and bipolar symmetry, essential for balanced <jats:italic>n</jats:italic>‐type MOS and <jats:italic>p</jats:italic>‐type MOS performance. In TFET configurations, both materials achieve subthreshold swings (SS) below 60 mV dec<jats:sup>−1</jats:sup>, with BAs under biaxial tensile strain reaching SS values as low as 43.35 mV dec<jats:sup>−1</jats:sup> for <jats:italic>n</jats:italic>‐type and 37.70 mV dec<jats:sup>−1</jats:sup> for <jats:italic>p</jats:italic>‐type. These findings highlight the potential of monolayer BP and BAs to significantly reduce power consumption and improve switching speeds, making them highly competitive for next‐generation CMOS technologies and addressing key challenges in semiconductor miniaturization and performance enhancement.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach","authors":"Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez","doi":"10.1002/aelm.202500374","DOIUrl":"https://doi.org/10.1002/aelm.202500374","url":null,"abstract":"Recent progress in printable electronics and biointerfaces has driven a growing interest in organic electronics for biosensor and neuromorphic applications, offering a valuable complement to traditional silicon technologies. Among organic electronics, organic electrochemical transistors (OECTs) have garnered significant attention for their high transconductance, biocompatibility, and dual ionic‒electronic charge transport capabilities. While OECTs show strong promise, their variability due to fabrication and material inconsistencies, limited insight into charge transport, and absence of standard models hinder their integration. A robust, physics‐based compact model can bridge these gaps and facilitate broader adoption of this device technology. This work presents a physics‐based DC compact model for OECTs, integrating electrochemical interactions using the Nernst equation in the above threshold regime with drain bias‐dependent diffusive charge transport in the subthreshold regime, unified by a hyperbolic tangent transition. It integrates the threshold voltage roll‐off effect and the drain voltage‐dependence of the hole mobility using the Poole‒Frenkel mobility model. The model is validated against experimental data from four distinct geometries of p‐type poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT: PSS) OECTs, which show excellent agreement with the measurements. The model reliably captures DC characteristics, making it suitable for incorporation into circuit simulation tools to support broader application development.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unravel the Role of Atomic Layer Deposited Al2O3 with Different Precursors on Optoelectronic Properties of IGZO Synaptic Transistors","authors":"Yanzhuo Wei, Guohui Li, Hongwei Hao, Chen Chen, Dongdong Li, Yanxia Cui, Shan‐Ting Zhang","doi":"10.1002/aelm.202500052","DOIUrl":"https://doi.org/10.1002/aelm.202500052","url":null,"abstract":"Extending the visible light response of indium gallium zinc oxide (IGZO) phototransistors is crucial for advanced optical neuromorphic computing and artificial visual perception systems. Using water (H<jats:sub>2</jats:sub>O) as the oxidant during atomic layer deposition of aluminum oxide (Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) interlayer introduces hydroxyl impurities within IGZO, generating subgap defects that boost photo‐sensitivity (≥10<jats:sup>6</jats:sup>) and photo‐responsivity (≥0.1 A W<jats:sup>−1</jats:sup>) under 420–620 nm visible light stimuli. The resultant IGZO/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>(H<jats:sub>2</jats:sub>O) synaptic transistor successfully emulates visible‐light‐driven plasticity. In comparison, the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> using ozone (O<jats:sub>3</jats:sub>) as the oxidant is found to produce lesser defects within IGZO but creates a decent amount of negative fixed charges at the interface, improving the contact properties between IGZO and source/drain electrodes. Through innovative experimental design and in‐depth surface analysis, this work offers new insights into the microscopic origin responsible for subgap absorption and contact properties in IGZO/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> structure, serving as guidelines toward designing scalable synaptic devices with enhanced optoelectronic properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145035891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}