Advanced Electronic Materials最新文献

{"title":"Array-Level Characterization of Cryogenic RRAM","authors":"Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu","doi":"10.1002/aelm.202500878","DOIUrl":"https://doi.org/10.1002/aelm.202500878","url":null,"abstract":"As emerging nonvolatile memory, resistive random-access memory (RRAM) holds great promise as a cryogenic memory solution for quantum computing systems. Although device-level cryogenic performance has been previously investigated, the scalability of these observations to RRAM array remains unaddressed. In this work, we report for the first time the comprehensive electrical characterization of a 1024-device HfO₂-based RRAM array from 300 K room temperature to 4 K Helium temperature. Forming voltages increase significantly, with mean value rising from 3.91 V at 300 K to 7.11 V at 4 K, while set and reset voltages exhibit minor increase with average set voltage from 1.30 V at 300 K to 1.46 V at 4 K and average reset voltage from 1.75 V at 300 K to 1.86 V at 4 K. Endurance test demonstrates robust performance over 1 M cycle without degradation at 300, 77, and 4 K, respectively. Most notably, retention and relaxation characteristics are dramatically enhanced at 77 and 4 K. The devices also exhibited strong immunity against read disturb across the investigated temperatures. These findings establish HfO₂-based RRAM array as high-performance cryogenic nonvolatile memory, and pave the way for practical integration of RRAM array in cryogenic quantum computing circuits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147666788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-Destructive, Reference-Free Quantitative Analysis of TaOx Memristive Devices Using Soft X-Ray Radiation","authors":"André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff","doi":"10.1002/aelm.202500784","DOIUrl":"https://doi.org/10.1002/aelm.202500784","url":null,"abstract":"Valence change memristive devices based on tantalum-oxides (TaO_x) exhibit excellent switching performance due to thermodynamics of the oxide phases, resulting in a robust switching mechanism, based on predominant movement of oxygen ions. The accurate physical details of how the conducting filaments form at a quantitative level remain only partially understood, largely because traditional characterization techniques only provide indirect, device-level insights into the complex nanoscale switching dynamics. In this work, we present a quantitative, reference free, non-destructive approach to investigating TaO_x-based memristive devices using nano-X-ray fluorescence analysis with monochromatic synchrotron radiation in the soft X-ray regime. Several spots with different origins and compositions were observed, indicating the switching dynamics are more complex than supposed. Our approach enables direct spatially resolved probing of elemental distributions within the device, including those in the buried layers critical for the resistive switching.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"37 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147666789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase-Transition-Controlled Modulation of Spin–Orbit Torques in VO2-Based Heterostructures by Orbital Hall Effect","authors":"Ye Liu, Yong Wu, Xiaoqian Xie, Jie Zhang, Ang Li, Kangkang Meng, Delin Zhang, Jikun Chen, Xiaoguang Xu, Yong Jiang","doi":"10.1002/aelm.70382","DOIUrl":"https://doi.org/10.1002/aelm.70382","url":null,"abstract":"Spin–orbit torques (SOTs) have emerged as one of the promising means to manipulate the magnetization switching, where tunable and enhanced SOT efficiencies are desirable for functional applications. Vanadium dioxide (VO₂), as a strongly correlated oxide with a metal-insulator transition (MIT) behavior near room temperature, presents an intriguing yet under-explored platform for SOT modulation. Here, current-induced spin–orbit torques in VO₂/Pt/Co/Pt heterostructures are investigated using the second-harmonic Hall voltage measurements across VO₂’s MIT temperature, and a nearly 300% abrupt variation in SOT efficiency is revealed. We experimentally demonstrate that this dramatic modulation originates from the sudden increase of orbital currents in VO₂ metallic phase, which markedly enhances the damping-like SOT efficiency to 0.45 at room temperature—near five times that of archetypal Pt/Co/Pt. Consequently, the critical switching current density decreases to 5.73 × 10⁶ A cm⁻², accompanied by a 60% reduction in the total device power consumption. This work displays a strong tunability of SOT efficiency, highlighting the potential of VO₂ for energy-efficient, thermally programmable memory and logic devices, and paves the way for spin-orbitronics based on strongly correlated oxides.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147664421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring Magnetic Skyrmion Dimensions via Precise Interface Roughness Modulation in W-Inserted Skyrmion SOT Channel Grown on β-Phase W Seed Layer","authors":"Yohan Choi, Sang-Min Kim, Heonhwan Yeo, Yeonsoo Shin, Min-cheol Kim, Jae-Kyeong Kim, Tae-Hun Shim, Jin-Sub Park, Jea-Gun Park","doi":"10.1002/aelm.202500775","DOIUrl":"https://doi.org/10.1002/aelm.202500775","url":null,"abstract":"For skyrmion-based perpendicular (p) Spin-Orbit-Torque (SOT) magnetic random-access-memory (MRAM), a tungsten (W)-inserted skyrmion SOT channel was designed by a precise modulation of the W insert layer thickness (<i>t_w,insert</i>) having 0.100–0.142 nm as well as the interface roughness (<i>R_a,interf,sky</i>) having 18.13–33.73 pixel density (a.u.) between ferromagnet Co₂Fe₆B₂ free layer and MgO tunneling barrier. An inverse relation was found between <i>R_a,interf,sky</i> and <i>t_w,insert</i>; i.e., a higher <i>R_a,interf,sky</i> required a smaller <i>t_w,insert</i>. In addition, <i>R_a,interf,sky</i> is critically determined by the surface roughness (<i>R_a,surf,seed</i>) of the <i>β</i>-phase SOT seed layer having 0.120–0.138 nm. A higher <i>R_a,surf,seed</i> induced significantly a higher <i>R_a,interf,sky</i>. Particularly, a precise design of the skyrmion diameter (0.96–0.62 µm) and density (0.093–0.140 ea/µm²) found that a higher <i>R_a,interf,sky</i> led to a smaller skyrmion diameter and a higher skyrmion density. These results demonstrate a practical possibility of a skyrmion-based SOT MRAM via a new inserted material and its related precise modulation of <i>R_a,interf,sky</i>.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147664422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"People Counting and Positioning Using Low-Resolution Infrared Images for FeFET-Based In-Memory Computing","authors":"Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe","doi":"10.1002/aelm.202500826","DOIUrl":"https://doi.org/10.1002/aelm.202500826","url":null,"abstract":"Real-time people counting and indoor positioning are essential features for energy-aware and privacy-preserving smart environments. However, achieving low-latency inference under strict power and bandwidth constraints remains challenging, particularly with conventional high-resolution RGB or depth-based vision systems. In this work, we present a fully co-optimized sensing and inference pipeline that combines a low-resolution thermopile infrared sensor with a hardware-tailored detection architecture. A 32<span data-altimg=\"/cms/asset/607c9d3f-0986-44a0-966f-ef9df25f81ac/aelm70375-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"117\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70375-math-0001.png\"><mjx-semantics><mjx-mo data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"times\" data-semantic-type=\"operator\"><mjx-c></mjx-c></mjx-mo></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70375:aelm70375-math-0001\" display=\"inline\" location=\"graphic/aelm70375-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><mo data-semantic-=\"\" data-semantic-role=\"unknown\" data-semantic-speech=\"times\" data-semantic-type=\"operator\">×</mo>$times$</annotation></semantics></math></mjx-assistive-mml></mjx-container>32 passive infrared array is used to collect a custom indoor dataset, and a compact pre-processing chain reduces frame size by over 80% while preserving silhouette information. The resulting binary inputs are processed by a quantization- and pruning-aware YOLOv3-tiny detector, achieving accurate and compact representation suitable for constrained edge devices. To support deployment on In-Memory Accelerators (IMC), we experimentally characterize multi-level cell (MLC) behavior in a fabricated 28 nm FeFET array, including programming voltage characteristics and memory window analysis. Controlled multi-level current accumulation is further validated at crossbar array level, confirming robust analog dot-product behavior under realistic operating conditions. The proposed pipeline demonstrates a holistic approach to embedded perception, spanning sensor data capture, model compression, and experimentally validated non-volatile analog hardware acceleration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147641579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1560-nm-Driven Second-Order Nonlinear Optical Response in CsGeI3: a Room-Temperature Ferroelectric Halide Perovskite","authors":"Hiroaki Fujikawa, Masato Sotome, Takashi Kondo","doi":"10.1002/aelm.202500680","DOIUrl":"https://doi.org/10.1002/aelm.202500680","url":null,"abstract":"Electro-optic (EO) crystals that exhibit strong second-order nonlinear optical responses in the near-infrared region, especially around 1560 nm, are essential for the advancement of high-speed optical communication technologies. Metal halide perovskites (MHPs), with their low-temperature processability, tunable optoelectronic properties, and emerging ferroelectricity, offer a promising platform for next-generation EO devices. In this study, we report a strong nonlinear optical response; terahertz pulse emission from solution-grown single crystals of ferroelectric halide perovskite CsGeI₃. Under 1560 nm femtosecond laser excitation, CsGeI₃ exhibited broadband terahertz emission by optical rectification with the estimated second-order nonlinear optical susceptibility of 3.9 × 10² pm/V. The mapping of the terahertz amplitude revealed ferroelectric domain structures exceeding 100 µm in size. These results position CsGeI₃ as a scalable nonlinear optical material with an electronic EO response, suitable for integrated photonic devices, high-speed Mach-Zehnder modulators in the telecom band.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147641974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration","authors":"Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang","doi":"10.1002/aelm.202500774","DOIUrl":"https://doi.org/10.1002/aelm.202500774","url":null,"abstract":"The demand for higher computing efficiency in the artificial intelligence era is driving the development of novel memory technologies for computing-in-memory (CIM) and monolithic 3D (M3D) integration. Ferroelectric field-effect transistors employing oxide semiconductor (OS) channels (OS-FeFETs) are a promising candidate, offering scalability and low-power operation. However, their reliability has been fundamentally limited by the thermal and operational instability of conventional amorphous oxide channels. Recently, polycrystalline TiO₂ has emerged as a robust channel material that addresses these stability and compatibility challenges, showing great potential for ferroelectric memory 3D-integration. This review comprehensively summarizes the progress in TiO₂-channel FeFETs. We begin by discussing the material and interfacial characteristics of TiO₂-based ferroelectric gate stacks, along with the physical mechanisms underpinning their superior stability. The device performance and multi-dimensional stability are then quantitively benchmarked against other OS platforms. Furthermore, we review the novel device architectures benefiting from the TiO₂ channel, such as planar double-gate and vertical-channel FeFETs, engineered to leverage these material advantages for M3D integration. Finally, we outline the remaining challenges and future research directions concerning mobility, array-level reliability, and integration pathways.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147641976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electric Field-Induced Hole- and Electron-Type Flat Bands in Twisted Double Bilayer Graphene","authors":"Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Paulina Majchrzak, Kimberly Hsieh, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Yong P. Chen, Jeil Jung, Søren Ulstrup","doi":"10.1002/aelm.202500882","DOIUrl":"https://doi.org/10.1002/aelm.202500882","url":null,"abstract":"Application of a finite electric field and small twist angle between two graphene bilayers leads to widely tunable electronic structures that support emergent phenomena. Here, we measure the electronic structure of twisted double bilayer graphene with twist angles of 3.1&lt;span data-altimg=\"/cms/asset/7916545b-c8ab-42a7-81b6-fbaa28bd7bd0/aelm70377-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"108\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm70377-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-msup data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"Superscript ring\" data-semantic-type=\"superscript\"&gt;&lt;mjx-mrow data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\"&gt;&lt;/mjx-mrow&gt;&lt;mjx-script style=\"vertical-align: 0.363em;\"&gt;&lt;mjx-mo data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-script&gt;&lt;/mjx-msup&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"urn:x-wiley:2199160X:media:aelm70377:aelm70377-math-0001\" display=\"inline\" location=\"graphic/aelm70377-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"&gt;&lt;semantics&gt;&lt;msup data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-role=\"unknown\" data-semantic-speech=\"Superscript ring\" data-semantic-type=\"superscript\"&gt;&lt;mrow data-semantic-=\"\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\"&gt;&lt;/mrow&gt;&lt;mo data-semantic-=\"\" data-semantic-parent=\"2\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\"&gt;∘&lt;/mo&gt;&lt;/msup&gt;$^{circ }$&lt;/annotation&gt;&lt;/semantics&gt;&lt;/math&gt;&lt;/mjx-assistive-mml&gt;&lt;/mjx-container&gt; and 6.0&lt;span data-altimg=\"/cms/asset/cbd2c691-1a43-49d4-b4bc-5b780ce8870b/aelm70377-math-0002.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"109\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm70377-math-0002.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-msup data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"Superscript ring\" data-semantic-type=\"superscript\"&gt;&lt;mjx-mrow data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"empty\"&gt;&lt;/mjx-mrow&gt;&lt;mjx-script style=\"vertical-align: 0.363em;\"&gt;&lt;mjx-mo data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;/mjx-script&gt;&lt;/mjx-msup&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"urn:x-wiley:2199160X:media:aelm70377:aelm70377-math-0002\" display=\"inline\" location=\"graphic/aelm70377-math-0002.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"&gt;&lt;semantics&gt;&lt;msup data-semantic-=\"\" data-seman","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"195 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147641975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics","authors":"Tania Assaf, Menahem Y. Rotenberg","doi":"10.1002/aelm.202600001","DOIUrl":"https://doi.org/10.1002/aelm.202600001","url":null,"abstract":"The ability to interrogate and control bioelectrical activity with high spatial and temporal precision is central to understanding and manipulating complex biological systems. While conventional bioelectronic platforms excel at extracellular recording and stimulation of 2D monolayered cells, they remain fundamentally limited in interfacing with cells within 3D tissue constructs and organoids. Recent advances in optoelectronic materials offer a path toward leadless, genetically independent, and spatially precise biointerfaces capable of overcoming these barriers. This perspective highlights recent advances in optoelectronic biointerfaces, spanning from macroscale flexible silicon and organic devices to nanoscale free-standing nanomaterials, with a particular focus on silicon-based optoelectronics. We discuss the photoelectrochemical (Faradaic and capacitive) phenomenon at the biointerface, and how device geometry, doping configuration, and dimensionality critically determine the balance between capacitive, Faradaic, and photothermal effects. Special emphasis is placed on intracellular silicon nanowires, which uniquely combine spontaneous cellular internalization with subcellular optoelectronic actuation. Finally, we outline key challenges and propose material and device-engineering strategies to advance nanoscale Electrical Modulation, Intracellular, and Leadless, optoelectronics toward practical 3D bioelectronic and biomedical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147641580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coupled Ionic–Electronic Transport in Vertical OECTs: A Combined Experimental and Simulation Study","authors":"Doaa Shamalia, Zachary Laswick, Jonathan Rivnay, Nir Tessler","doi":"10.1002/aelm.202500689","DOIUrl":"https://doi.org/10.1002/aelm.202500689","url":null,"abstract":"Organic electrochemical transistors (OECTs) uniquely couple ionic and electronic transport, enabling high transconductance and low-voltage operation for bioelectronic applications. While the Bernards–Malliaras model successfully describes lateral OECTs, it fails to capture the coupled space- and time-dependent processes that govern vertical OECTs (vOECTs), particularly for disordered semiconductors and high ion concentrations. Here, we present a 2D numerical simulation that self-consistently couples ion transport and electronic charge dynamics, validated against experimental data from n-type poly(benzimidazobenzophenanthroline) (BBL) vOECTs. The simulations reproduce steady-state and transient characteristics, revealing key physical mechanisms including diffusion-dominated electronic transport, contact tunneling, energy loss at the semiconductor/electrolyte interface, and gate-induced ion acceleration via band bending. The simulation also quantifies geometry-dependent mobility discrepancies and anisotropic ionic transport between vertical and lateral architectures, consistent with recent reports on mixed ionic–electronic conductors. By bridging microscopic mechanisms with experimental observables, this work provides a predictive framework for vOECT operation and offers design guidelines for high-performance, high-density bioelectronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"42 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147626030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}