Advanced Electronic Materials最新文献

{"title":"Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide","authors":"Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes","doi":"10.1002/aelm.202400338","DOIUrl":"https://doi.org/10.1002/aelm.202400338","url":null,"abstract":"Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si-JNTs) is demonstrated using gaseous nitrogen dioxide (NO₂). This involves a dual reaction in both <i>p</i>- and <i>n</i>-type conduction, resulting in a significant decrease in the current in <i>n</i>-conduction mode and an increase in the <i>p</i>-conduction mode upon NO₂ exposure. Various Si-JNT parameters, including “on”-current (<i>I_on</i>), threshold voltage (<i>V_th</i>), and mobility (<i>µ</i>) exhibit dynamic changes in both the <i>p</i>- and <i>n</i>-conduction modes of the ambipolar transistor upon interaction with NO₂ (concentration between 2.5 – 50 ppm). Additionally, NO₂ exposure to Si-JNTs with different surface morphologies, that is, unpassivated Si-JNTs with a native oxide or with a thermally grown oxide (10 nm), show distinct influences on <i>I_on</i>, <i>V_th</i>, and <i>µ</i>, highlighting the effect of surface oxide on NO₂-mediated charge transfer. Interaction with NO₂ alters the carrier concentration in the JNT channel, with NO₂ acting as an electron acceptor and inducing holes, as supported by Density Functional Theory (DFT) calculations, providing a pathway for charge transfer and “pseudo” molecular doping in ambipolar Si-JNTs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D α-In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators","authors":"Jiayi Sun, Weifan Cai, Yang Yang, Yihao Zhuang, Qing Zhang","doi":"10.1002/aelm.202400498","DOIUrl":"https://doi.org/10.1002/aelm.202400498","url":null,"abstract":"Tunable and switchable film bulk acoustic resonators (FBARs) with the capability of dynamically adjusting their resonant frequencies hold significant promise for advanced multi-band radio frequency (RF) communication systems. However, tunable and switchable FBARs based on conventional thin ferroelectric materials face several challenges in meeting the demands of advanced RF applications. Specifically, submicron-thick ferroelectric materials suffer from degradation in piezoelectric performance due to the strong scattering of acoustic waves caused by surface defects, as well as the inconsistency in crystal orientation. Recent advances in 2D ferroelectric materials create new opportunities for high-performance tunable and switchable FBARs. Here, the first batch of FBAR chips based on 2D α-In₂Se₃ flakes is reported. The α-In₂Se₃-based FBARs are normally under the on-state and possess a small off-voltage of −4 V. A tuning range of 26 MHz is achieved with a control voltage from −2 to 4 V at the resonant frequency of 8.6 GHz. To the best of the author's knowledge, this is the first batch of tunable FBARs that can function beyond the sub-6 GHz band. This work demonstrates for the first time that 2D ferroelectric materials are very promising for high-frequency tunable and switchable FBARs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Cell Membrane Potential Stimulation and Recording by an Electrolyte-Gated Organic Field-Effect Transistor","authors":"Nicolò Lago, Alessandra Galli, Sarah Tonello, Sara Ruiz-Molina, Saralea Marino, Stefano Casalini, Marco Buonomo, Simona Pisu, Marta Mas-Torrent, Giada Giorgi, Morten Gram Pedersen, Mario Bortolozzi, Andrea Cester","doi":"10.1002/aelm.202400134","DOIUrl":"https://doi.org/10.1002/aelm.202400134","url":null,"abstract":"The reliable stimulation and recording of electrical activity in single cells by means of organic bio-electronics will be an important milestone in developing new low-cost and highly biocompatible medical devices. This paper demonstrates extracellular voltage stimulation and single-cell membrane potential recording by means of a dual-gate electrolyte-gated organic field-effect transistors (EGOFET) employing 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene blended with polystyrene as active material. To obtain a sufficiently small footprint to allow bidirectional communication at the single cell level, the EGOFET technology has been scaled down implementing a Corbino layout, paving the way to the development of novel bidirectional Electrocorticography (ECoG) devices with a high spatial resolution. A specific and thorough analysis of the working mechanisms of EGOFET-based bio-sensors is reported, highlighting the importance of the device design and using an appropriate batch of measurements for the recording of the electrical activity of cells.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"80 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Change Memory: A Review on Electrical Behavior and Use in Analog In-Memory-Computing (A-IMC) Applications","authors":"Mattia Boniardi, Matteo Baldo, Mario Allegra, Andrea Redaelli","doi":"10.1002/aelm.202400599","DOIUrl":"https://doi.org/10.1002/aelm.202400599","url":null,"abstract":"Recent development and progress of Artificial Intelligence (AI) algorithms made clear that this topic is a paradigm shift with respect to the past. High throughput and ability to do complex tasks makes AI a great field of opportunity. This advancement is somehow limited by the physical implementation of the chips that are still bound to the historical von-Neumann Architecture with processing units and memory hardware spatially separated. The way data is bussed and processed needs disruptive innovation, rather than an evolutionary approach, too. In Analog In-Memory Computing (A-IMC) the typical properties of resistance-based memory technologies are used to both store and compute information. This allows for incredibly high parallelism and removes the problems related to the known von-Neumann bottleneck. In the present work, A-IMC networks based on resistive memories and on the Phase Change Memory (PCM) technology, in particular, are extensively discussed. After a first review of the general features of PCM devices, their application to A-IMC is described, aiming at a full description of the current technological scenario.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aqueous Ammonia Sensor with Neuromorphic Detection","authors":"Kateryna Vyshniakova, Mohammad Javad Mirshojaeian Hosseini, Huiwen Bai, Masoome Fatahi, Victor Marco Rocha Malacco, Shawn S Donkin, Richard M Voyles, Robert A. Nawrocki","doi":"10.1002/aelm.202400509","DOIUrl":"https://doi.org/10.1002/aelm.202400509","url":null,"abstract":"A hybrid inorganic–organic neuromorphic sensor utilizing a thin film zinc oxide (ZnO) detector with organic neuromorphic pre-processing is developed to quantify ammonia in aqueous environments, including biological analytes. Impedimetric ZnO sensor, connected to an organic somatic circuit, reliably and accurately detects changes in electrical impedance to measure and quantify variations in the concentration of ammonia. The sensing mechanism of the ZnO thin film sensor is hypothesized to be the cause of the decrease in resistance of a solution with an increase in ammonia concentration. It is found that the surface oxide of the ZnO layer reacts with even very low concentrations of ammonia (&lt;span data-altimg=\"/cms/asset/a36b91bf-f859-44b5-a5d9-080394253626/aelm1030-math-0001.png\"&gt;&lt;/span&gt;&lt;mjx-container ctxtmenu_counter=\"6\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"&gt;&lt;mjx-math aria-hidden=\"true\" location=\"graphic/aelm1030-math-0001.png\"&gt;&lt;mjx-semantics&gt;&lt;mjx-mrow data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3\" data-semantic-content=\"4\" data-semantic- data-semantic-role=\"implicit\" data-semantic-speech=\"upper N upper H 3\" data-semantic-type=\"infixop\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,⁢\" data-semantic-parent=\"5\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\" style=\"margin-left: 0.056em; margin-right: 0.056em;\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mo&gt;&lt;mjx-msub data-semantic-children=\"1,2\" data-semantic- data-semantic-parent=\"5\" data-semantic-role=\"latinletter\" data-semantic-type=\"subscript\"&gt;&lt;mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mi&gt;&lt;mjx-script style=\"vertical-align: -0.15em; margin-left: -0.057em;\"&gt;&lt;mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"3\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"&gt;&lt;mjx-c&gt;&lt;/mjx-c&gt;&lt;/mjx-mn&gt;&lt;/mjx-script&gt;&lt;/mjx-msub&gt;&lt;/mjx-mrow&gt;&lt;/mjx-semantics&gt;&lt;/mjx-math&gt;&lt;mjx-assistive-mml display=\"inline\" unselectable=\"on\"&gt;&lt;math altimg=\"urn:x-wiley:2199160X:media:aelm1030:aelm1030-math-0001\" display=\"inline\" location=\"graphic/aelm1030-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"&gt;&lt;semantics&gt;&lt;mrow data-semantic-=\"\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"0,3\" data-semantic-content=\"4\" data-semantic-role=\"implicit\" data-semantic-speech=\"upper N upper H 3\" data-semantic-type=\"infixop\"&gt;&lt;mi data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic-parent=","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"250 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid Prototyping for Accelerated Establishment of Film Processing‐Performance Relationships in Silicon Phthalocyanine OFETs","authors":"Rosemary R. Cranston, Jacob Mauthe, Tonghui Wang, Gaurab J. Thapa, Aram Amassian, Benoît H. Lessard","doi":"10.1002/aelm.202400500","DOIUrl":"https://doi.org/10.1002/aelm.202400500","url":null,"abstract":"Understanding the complex relationships underlying the performance of organic electronic devices, such as organic field‐effect transistors (OFETs), requires researchers to navigate a multi‐dimensional parameter space that includes material design, solution formulation, fabrication parameters, and device geometry. Herein, a recently developed materials acceleration platform is demonstrated, named the RoboMapper, to perform direct on‐chip fabrication of OFETs by ultrasonic meniscus printing using silicon phthalocyanine (SiPc) derivatives as the semiconductor. OFETs using bis(tri‐<jats:italic>n</jats:italic>‐butylsilyl oxide) SiPc ((3BS)<jats:sub>2</jats:sub>‐SiPc) exhibited the best device performance characterized by the highest electron field‐effect mobility (<jats:italic>µ<jats:sub>e</jats:sub></jats:italic>). Through optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS), the favorable performance of (3BS)<jats:sub>2</jats:sub>‐SiPc is attributed to the specific film morphology and molecular packing achieved with optimal print conditions. Investigating the impact of deposition parameters reveals the crucial role of solvent evaporation rate and print speed in achieving high‐quality film formation. Overall, optimal fabrication conditions for (3BS)<jats:sub>2</jats:sub>‐SiPc devices include slow print speeds and fast evaporating solutions achieved by using a mixture of co‐solvents and an elevated substrate temperature. The results of this work reveal distinct relationships between deposition conditions, film properties, and device performance for each SiPc derivative and emphasize the necessity of high throughput experimentation to comprehensively understand process‐performance relationships in organic semiconductors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching","authors":"Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter","doi":"10.1002/aelm.202400691","DOIUrl":"https://doi.org/10.1002/aelm.202400691","url":null,"abstract":"2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few‐layer/multilayer SnSe<jats:sub>2</jats:sub> gated by a solution top gate combines very high room‐temperature electron mobility (up to 800 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup>s<jats:sup>−1</jats:sup>), along with large on‐off current ratios (&gt;10<jats:sup>5</jats:sup>) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field‐effect devices, at exceptionally large sheet carrier concentrations of ≈10<jats:sup>13</jats:sup> cm<jats:sup>−2</jats:sup>. Observed mobility enhancements upon partial depletion of the channel point to near‐surface defects or impurities as the mobility‐limiting scattering centers. Under illumination, the resulting gap states give rise to gate‐controlled switching between positive and negative photoconductance. The results qualify SnSe<jats:sub>2</jats:sub> as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"64 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo2O4 Thin Films","authors":"Detian Yang, Arjun Subedi, Chao Liu, Haile Ambaye, Valeria Lauter, Peter A. Dowben, Yaohua Liu, Xiaoshan Xu","doi":"10.1002/aelm.202400149","DOIUrl":"https://doi.org/10.1002/aelm.202400149","url":null,"abstract":"Understanding intrinsic exchange bias in nominally single-component ferromagnetic or ferrimagnetic materials is crucial for simplifying related device architectures. However, the mechanisms behind this phenomenon and its tunability remain elusive, which hinders the efforts to achieve unidirectional magnetization for widespread applications. Inspired by the high tunability of ferrimagnetic inverse spinel NiCo₂O₄, the origin of intrinsic exchange bias in NiCo₂O₄ (111) films deposited on Al₂O₃ (0001) substrates are investigated. The comprehensive characterizations, including electron diffraction, X-ray reflectometry and spectroscopy, and polarized neutron reflectometry, reveal that intrinsic exchange bias in NiCo₂O₄ (111)/Al₂O₃ (0001) arises from a reconstructed antiferromagnetic rock-salt Ni<i>_x</i>Co₁<i>_-x</i>O layer at the interface between the film and the substrate due to a significant structural mismatch. Remarkably, by engineering the interfacial structure under optimal growth conditions, it can achieve exchange bias larger than coercivity, leading to unidirectional magnetization. Such giant intrinsic exchange bias can be utilized for realistic device applications. This work establishes a new material platform based on NiCo₂O₄, an emergent spintronics material, to study tunable interfacial magnetic and spintronic properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142643230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Power Density Micro Thermoelectric Generators for Powering IoTs","authors":"Aditya S. Dutt, Nithin B Pulumati, Kangfa Deng, Jens Wagner, Andreas Brönner, Frank Ellinger, Gabi Schierning, Kornelius Nielsch, Heiko Reith","doi":"10.1002/aelm.202400198","DOIUrl":"https://doi.org/10.1002/aelm.202400198","url":null,"abstract":"Micro thermoelectric generators (µTEGs) can harvest waste heat to generate electricity, making them a potential solution to the growing problem of powering autonomous electronics, such as sensors for the Internet of Things. Until now, µTEGs have not been able to provide power for these applications. This is because the output power of µTEGs is limited due to insufficient contacts and poor thermal coupling between the device and the heat source. In this work, the contact resistance as well as the thermal coupling between the heat source and the device through process optimization are improved. The former by improved electrochemical deposition (ECD) conditions, the latter by introducing a thin solder adhesion layer, which smooths the uneven surface of µTEG due to its good wetting properties. Using these improvements in combination with optimized packing density, here the fabrication and characterization of a µTEG with 126 leg pairs connected in series are reported that exhibits an open circuit voltage of 339.2 mV at a temperature difference of 20.6 K and a record-high normalized power density of 25.1 µW cm⁻² K⁻² for ECD based µTEGs. This µTEG is used to power a temperature sensor, bringing this work one step closer to application.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible and Sensitive Triboelectric Nanogenerator Strain Sensors Made of Semi-Embedded Aligned Silver Nanowires","authors":"Yang Ye, Jin Ning, Yuan Meng, Yuxin Wang, Peike Wang, Jingjing Luo, Ao Yin, Zhongqi Ren, Haipeng Liu, Xue Qi, Suzhu Yu, Jun Wei","doi":"10.1002/aelm.202400426","DOIUrl":"https://doi.org/10.1002/aelm.202400426","url":null,"abstract":"Recently, flexible strain sensors have attracted great attention due to their wide applications in human-machine interface interaction, healthcare, soft robotics, etc. While many reported flexible strain sensors are stretchable, the stability of sensors under long-term deformation is still a significant challenge. In this work, a strain sensor has been fabricated by encapsulating semi-embedded aligned silver nanowires with a PDMS layer, showing a maximum gauge factor of 396.3 at 100% strain and a durability of 3000 cycles stretching. The strain-sensitive material also remains stable after multiple bending and twisting during the 10000 cycles test. Furthermore, the strain sensor is endowed with a triboelectric nanogeneration function based on the triboelectric nanogeneration effect. The device has a maximum output power density of 9.36 mW m⁻², allowing it to realize strain sensing while converting the mechanical energy produced by daily activities into electrical power. As proof of demonstration, attaching the device to the finger joint provides accurate real-time strain sensing and stable output of triboelectric power.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"154 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}