Advanced Electronic Materials最新文献_第3页

Rationally Design Thermoelectric Materials Based on Ingenious Machine Learning Methods 基于巧妙的机器学习方法合理设计热电材料

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-14 DOI: 10.1002/aelm.202500210

Yuqing Sun, Xiaorui Chen, Jianzhi Gao, Wenliang Zhu, Minghu Pan

{"title":"Rationally Design Thermoelectric Materials Based on Ingenious Machine Learning Methods","authors":"Yuqing Sun, Xiaorui Chen, Jianzhi Gao, Wenliang Zhu, Minghu Pan","doi":"10.1002/aelm.202500210","DOIUrl":"https://doi.org/10.1002/aelm.202500210","url":null,"abstract":"Data quality, feature interpretability, and model generalization are critical and challenging for applying machine learning (ML) in the design of high-efficiency materials. In this work, an ML framework with integrating multi-step feature engineering is constructed for predicting the figure of merit (ZT) values of thermoelectric materials. By incorporating thermoelectric material data from the Starrydata2 database and implementing rigorous data cleaning, a high-quality ZT prediction dataset is established. An integrated strategy of feature extraction with combining Magpie and CBFV methods is utilized, followed by feature selection via Pearson correlation analysis and LassoCV cross-validation. Finally, the deep neural network model (Model-I) demonstrates excellent predictive performance (R2 = 0.95 on the training set and R2 = 0.90 on the test set), as well as identified successfully promising candidates such as CsCdBr3 and TlBSe3 in screening chalcogenide and halide perovskites. Combined with Density Functional Theory (DFT) calculation, the outstanding thermoelectric performance of CsCdBr3 under p-type doping (ZTmax = 1.64) and the bipolar thermoelectric characteristics of TlBSe3 (ZTmax = 1.04 for n-type and ZTmax = 0.99 for p-type) at 800K are successfully demonstrated, further confirming the reliability of our method. This study provides an applicative data-driven approach for functional material design, balancing predictive accuracy and physical interpretability.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144000659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel Porous Gold Microspheres Anisotropic Conductive Film (PGMS-ACF) with High Compression Ratio for Flip Chip Packaging 用于倒装封装的新型高压缩比多孔金微球各向异性导电膜（PGMS-ACF）

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-12 DOI: 10.1002/aelm.202500045

Li Zhang, Zhaomeng Wang, Geng Wei, Puyue Xia, Sining Fan, Wenhao Zhang, Shaolong Tang

{"title":"Novel Porous Gold Microspheres Anisotropic Conductive Film (PGMS-ACF) with High Compression Ratio for Flip Chip Packaging","authors":"Li Zhang, Zhaomeng Wang, Geng Wei, Puyue Xia, Sining Fan, Wenhao Zhang, Shaolong Tang","doi":"10.1002/aelm.202500045","DOIUrl":"https://doi.org/10.1002/aelm.202500045","url":null,"abstract":"The preparation of conductive filler is a key technology in anisotropic conductive films preparation. In recent decades, research on the preparation of novel conductive particles has reached a bottleneck. Porous gold materials exhibit high compressibility, low density, and excellent conductivity. It is believed that using porous gold microspheres (PGMS) to supersede polymer composite conductive microspheres has the potential to prepare anisotropic conductive film (ACF) with better performance. However, preparing ultrafine (1–10 µm) PGMS remains challenging. Herein, the study presents a novel method for preparing PGMS with controllable particle size and high sphericity. Results show that porous gold microspheres ACF (PGMS-ACF), containing only 5 wt.% particles (size range 4.5–10.5 µm), achieves good conductivity when held at a pressure range of 0.05–0.6 MPa. Its compression ratio is between 33% and 71% at 0.3 MPa. The 4-point probe measurement shows a contact resistance as low as 10 mΩ in 2 mm2. Moreover, PGMS-ACF also exhibits a good linear relationship within 3.3 A. Compared to commercial polymer composite conductive microspheres ACF, PGMS-ACF offers a significant advantage in achieving a large compression ratio, which in turn leads to improved conductivity and reduces the need for precise sorting. The research provides a new approach for the preparation of novel ACF.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Direct Ink Writing of Liquid Metal Foams via Liquid Additives 液体添加剂改善液态金属泡沫的直墨书写性能

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-12 DOI: 10.1002/aelm.202500009

Febby Krisnadi, Tushar Sakorikar, Man Hou Vong, Michael D. Dickey

{"title":"Improved Direct Ink Writing of Liquid Metal Foams via Liquid Additives","authors":"Febby Krisnadi, Tushar Sakorikar, Man Hou Vong, Michael D. Dickey","doi":"10.1002/aelm.202500009","DOIUrl":"https://doi.org/10.1002/aelm.202500009","url":null,"abstract":"Ga-based liquid metals (LMs) are conductive liquids in room conditions, making them attractive for printing conductive patterns. Yet, LM extrudes as droplets because of its high effective interfacial tension and low viscosity. In contrast, liquid metal foams (LMFs) exhibit yield stress and shear-thinning behavior, which are necessary for extruding filaments for direct ink writing (DIW). LMFs are made by stirring LM in air, thereby entraining oxide-lined air capsules. Unlike LM mixtures containing metallic particles, LMFs do not embrittle from intermetallic phase formation. Here, DIW of LMF and the challenge of separation of dissimilar phases during extrusion are explored. Incorporating additives, glycerol and tannic acid (TA), into LMF improves the printability of the mixture. The new formulations, LMFG (LMF + glycerol) and LMFGT (LMF + TA-glycerol solution), extrude more uniformly and produce better print quality than LMF. Interestingly, the viscosity and flow stress of LMF is between that of LMFGT and LMFG. This highlights the limitation of relying on rheological properties alone to predict printability in the case of LMF-based mixtures. With LM as the continuous phase, these LMF-based inks exhibit high electrical conductivity. DIW of LMF-based inks can be done in room conditions without additional pre/ post-processing, among other advantages.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes 绿色发光二极管用ch30 - peabr钝化准二维钙钛矿BA2Cs4Pb5Br16薄膜

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-12 DOI: 10.1002/aelm.202500071

Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai

{"title":"CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes","authors":"Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai","doi":"10.1002/aelm.202500071","DOIUrl":"https://doi.org/10.1002/aelm.202500071","url":null,"abstract":"In this paper, the quasi-2D green perovskite BA2Cs4Pb5Br16 film passivated by the CH3O-PEABr is reported to realize nonradiative defect suppressing. The passivated BA2Cs4Pb5Br16 film has a large exciton binding energy (74.9 meV), which is conducive to efficient radiation recombination. Time-resolved photoluminescence and ultrafast transient absorption spectroscopy show that the carrier lifetime is effectively prolonged after CH3O-PEABr passivation, indicating photoluminescence enhancement is attributed to the nonradiative defect suppressing. Finally, an electroluminescent green light-emitting diodes device is fabricated based on the CH3O-PEABr-passivated BA2Cs4Pb5Br16 thin film, the maximum external quantum efficiency can be 19.47%. The results indicate that the CH3O-PEABr passivated BA2Cs4Pb5Br16 thin film can be a promising material for the high-performance green light-emitting diodes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143940344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mitigating Defectiveness in 2D Materials Devices by a Visualization-Assisted Fabrication Process 通过可视化辅助制造工艺减轻二维材料器件的缺陷

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-08 DOI: 10.1002/aelm.202400900

Bhartendu Papnai, Yen Nguyen, Poonam Subhash Borhade, Hsin-Yi Tiffany Chen, Ya-Ping Hsieh, Mario Hofmann

引用次数: 0

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation 电阻式随机存取存储器中Ta2O5中Ru和氧空位的扩散特性：密度泛函理论研究

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-08 DOI: 10.1002/aelm.202500128

Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy

{"title":"Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation","authors":"Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy","doi":"10.1002/aelm.202500128","DOIUrl":"https://doi.org/10.1002/aelm.202500128","url":null,"abstract":"The resistive switching behavior of memristors is primarily determined by the characteristics of their mobile species, with balancing retention and switching energy being a significant challenge. Ruthenium (Ru) has recently emerged as a potential mobile species, enabling low switching currents, rapid operation, and good retention, addressing critical issues in next-generation memory systems. However, understanding the atomistic details of Ru diffusion in oxides remains lacking but critical for interpreting its promising experimental device behavior. Here, we conduct a comprehensive atomistic analysis of Ru and oxygen vacancy (OV) diffusion in Ta2O5-based memristors utilizing density functional theory computations. Our findings reveal that Ru-doping at interstitial sites demonstrates a noticeably lower diffusion barrier than OVs, signifying improved mobility under an electric field. This underscores the emergence of Ru-based conductive filaments as a crucial mechanism for memristive switching. Formation energy analyses indicate that Ru ions possess lower formation energies than OVs, improving their thermodynamic stability and mobility within the oxide matrix. Moreover, electronic structure studies reveal significant alterations in the local density of states near the Fermi level around Ru and OV sites, influencing the material's conductive properties. These findings establish a strong basis for optimizing Ru-based memristive devices for next-generation memory technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"37 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143920933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Readily Tunable Surface Potential by Functionalizing Pentacene with Dipole Monolayers 偶极子单层功能化并五苯的表面电位可调

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-06 DOI: 10.1002/aelm.202400199

Matthew C. Williams, Jordan MacQueen, Demetra Z. Adrahtas, Kevin C. DePope, Jacob W. Ciszek

{"title":"Readily Tunable Surface Potential by Functionalizing Pentacene with Dipole Monolayers","authors":"Matthew C. Williams, Jordan MacQueen, Demetra Z. Adrahtas, Kevin C. DePope, Jacob W. Ciszek","doi":"10.1002/aelm.202400199","DOIUrl":"10.1002/aelm.202400199","url":null,"abstract":"The surface potential of a prototypical organic semiconductor, pentacene, is chemically modified by the addition of a dipole monolayer on top of the thin film. Changes are afforded by reacting the topmost layer of pentacene to generate the monolayer, and the reactant structure provides a high degree of tunability for surface potential, with shifts up to 800 mV possible. Despite the complexity of the adsorbed layer, the surface potential shift displays a near-linear dependency between dipole strength and surface potential change, and a good degree of predictability via the Helmholtz equation. The large changes in surface potential should be enough to access electron injection in this p-type semiconductor, but device I–V characteristics are not consistent with this behavior. Interactions between the metal top contact and a chemical functional group within the monolayer are the likely culprit, with spectroscopic evidence presented. While tailoring the surface potential of organic surfaces is achievable, maintaining the integrity of surface energetics upon metal deposition remains challenging.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400199","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Ultrathin Optoelectronic Memristor with Dual-Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision 一种具有双功能光电探测器和神经形态视觉光学突触行为的超薄光电忆阻器

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-06 DOI: 10.1002/aelm.202400992

Lilan Zou, Junru An, Haonan Xu, Guizhen Wang, Shiwei Lin

{"title":"An Ultrathin Optoelectronic Memristor with Dual-Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision","authors":"Lilan Zou, Junru An, Haonan Xu, Guizhen Wang, Shiwei Lin","doi":"10.1002/aelm.202400992","DOIUrl":"https://doi.org/10.1002/aelm.202400992","url":null,"abstract":"Integrating multiple functions within a neuromorphic device is essential for simplifying circuit design in compact artificial vision applications. At the same time, there is a constant push to reduce the size of devices to improve integration. Nevertheless, decreasing the thickness of the active layer compromises photoelectric performance, affecting stability, uniformity, endurance, and photosensitivity. An optoelectronic memristor featuring an ultrathin AlOx/TiOy periodic heterostructure is proposed. This design minimizes the active layer thickness without compromising optoelectronic properties and enables multifunctionality as a photodetector, electric synapse, and optical synapse in a single device. The periodic heterostructure is successfully prepared by atomic layer deposition with a thickness of only ≈12 nm. The device enables electric synaptic behaviors, which are essential for neuromorphic computing. Notably, the dual-functional photodetector and optical synapse facilitate the efficient acquisition and processing of visual information following specific application scenarios. It enables visual attention simulation for energy-efficient object detection. Finally, a complete visual system is demonstrated, encompassing sensing, front-end preprocessing, and back-end computing. Based on the proposed system, a six-layer convolutional neural network is built to recognize EMNIST patterns, and front-end preprocessing improves recognition accuracy from 64% to 78%.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Efficiency Optoelectronic Modulation in Quasi-2D Perovskite-Based Transistors for Neuromorphic Computing 用于神经形态计算的准二维钙钛矿基晶体管的高效光电调制

IF 6.2 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-05 DOI: 10.1002/aelm.202400947

Wenwen Wang, Yao Li, Jiangdong Zhang, Menghan Chen, Jia Liu, Jiahao Kang, Jinjin Zhao

{"title":"High-Efficiency Optoelectronic Modulation in Quasi-2D Perovskite-Based Transistors for Neuromorphic Computing","authors":"Wenwen Wang, Yao Li, Jiangdong Zhang, Menghan Chen, Jia Liu, Jiahao Kang, Jinjin Zhao","doi":"10.1002/aelm.202400947","DOIUrl":"https://doi.org/10.1002/aelm.202400947","url":null,"abstract":"Optoelectronic modulated transistors based on organic–inorganic halide perovskites can perceive and parse visual information, making them appealing for neuromorphic computing or future vision automation owing to their abundant and tunable optoelectronic properties, high quantum efficiency, and large specific surface area. Herein, quasi-2D (ThMA)2(MA)n-1PbnI3n+1 (n = 4) transistor exhibits n/p-type ambipolar transport characteristics. The remarkable hysteresis behavior observed in the transfer characteristics can be modulated by external voltages and illumination. The ambipolar quasi-2D (ThMA)2(MA)n-1PbnI3n+1 (n = 4) transistor exhibits maximum charge mobility under light illumination with hole mobility (µh\u0000) of ≈1.5 × 10−4 cm2 V−1 s−1 (≈167 times higher than that in the dark condition), threshold voltage (V\u0000th) of 2.1 V, and subthreshold swing (SS) of 3.4 V decade−1 for the p-channel mode, and electron mobility (µe\u0000) of ≈1.9 × 10−4 cm2 V−1 s−1, V\u0000th of 3.1 V, and SS of 1.7 V decade−1 for the n-channel mode, respectively. The effects of light illumination on the potentiation and depression properties of the proposed device are discussed. The Chinese handwritten characters from the Institute of Automation of the Chinese Academy of Sciences are used to simulate the image recognition properties. The quasi-2D perovskite offers a new platform for the development of optoelectronic neuromorphic systems and bionic vision.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143905513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hardware Implementation of Memristor Ratioed Logic Circuits Based on Egg Protein Memristors 基于鸡蛋蛋白忆阻器的忆阻比率逻辑电路的硬件实现

IF 5.3 2区材料科学

Advanced Electronic Materials Pub Date : 2025-05-04 DOI: 10.1002/aelm.202400193

Lu Wang, Ze Zuo, Xiafan Zhang, Dianzhong Wen

{"title":"Hardware Implementation of Memristor Ratioed Logic Circuits Based on Egg Protein Memristors","authors":"Lu Wang, Ze Zuo, Xiafan Zhang, Dianzhong Wen","doi":"10.1002/aelm.202400193","DOIUrl":"10.1002/aelm.202400193","url":null,"abstract":"The demand for processing power has increased dramatically as a result of the growth of information technology. The traditional computing system has the fatal disadvantage of separating storage and computing. Many data are repeatedly moved between storage and computing, and its time cost and energy consumption are incalculable. Compared with traditional logic circuits, memristor-based logic circuits have lower power consumption and smaller circuit areas, so memristor logic circuits are an effective way to realize efficient computing systems. In this paper, an egg albumen (EA)-based memristor with threshold characteristics is fabricated. The device has low power consumption and stable performance and can work in an extensive temperature difference range for a long time. Since the 1S1R (one-selector-one-resistor) unit composed of the device as a selector and another bipolar device can effectively reduce the leakage current, the cross array integrating multiple 1S1R units can achieve high-density storage and calculation. The “AND” and “OR” logic functions based on memristor ratioed logic are realized by the 1S1R memory array. The scheme realizes the integration of storage and computing, breaks the bottleneck of von Neumann, and provides an effective way to build a new and efficient computing system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 7","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400193","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143905515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0