Advanced Electronic Materials最新文献

{"title":"On the Accessibility of Higher‐n Phases in Formamidinium‐Based Ruddlesden‐Popper and Dion–Jacobson Layered Hybrid Perovskites","authors":"Ghewa AlSabeh, Vladislav Slama, Masaud Almalki, Lena Merten, Paul Zimmermann, Alexander Hinderhofer, Pascal Alexander Schouwink, Virginia Carnevali, Nikolaos Lempesis, Lorenzo Agosta, Frank Schreiber, Ursula Rothlisberger, Michael Grätzel, Jovana V. Milić","doi":"10.1002/aelm.202500164","DOIUrl":"https://doi.org/10.1002/aelm.202500164","url":null,"abstract":"Layered (2D) hybrid perovskites offer a promising alternative for stabilizing halide perovskite materials, with a growing interest in formamidinium (FA<jats:sup>+</jats:sup>) lead iodide derivatives for photovoltaics due to their exceptional optoelectronic properties. While their potential increases with the number of inorganic layers (<jats:italic>n</jats:italic>), the experimental evidence suggests that obtaining <jats:italic>n &gt;</jats:italic> 2 phases is challenging for FA‐based layered perovskites. To address this challenge and identify the conditions governing the formation of higher‐<jats:italic>n</jats:italic> phases, representative FA‐based layered hybrid perovskite materials containing aromatic spacer cations, namely benzylammonium (BNA) and 1,4‐phenylenedimethanammonium (PDMA)—are investigated as model systems for the corresponding Ruddlesden‐Popper and Dion‐Jacobson phases based on (BNA)<jats:sub>2</jats:sub>FA<jats:sub>n–1</jats:sub>Pb<jats:sub>n</jats:sub>I<jats:sub>3n+1</jats:sub> and (PDMA)FA<jats:sub>n–1</jats:sub>Pb<jats:sub>n</jats:sub>I<jats:sub>3n+1</jats:sub> formulations (<jats:italic>n =</jats:italic> 1–3), respectively. Moreover, the effect of Cs<jats:sup>+</jats:sup> cations on the formation of <jats:italic>n &gt;</jats:italic> 1 phases is explored through a combination of X‐ray scattering measurements, solid‐state NMR spectroscopy, optoelectronic characterization, and density functional theory calculations. Despite improved photovoltaic performances, the formation of higher (<jats:italic>n &gt;</jats:italic> 2) phases is excluded, even in the presence of Cs<jats:sup>+</jats:sup>, due to the favorable formation of other low‐dimensional phases revealed by the theoretical investigation. The results contribute to a comprehensive understanding of these materials of broad interest to their application in optoelectronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144566437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy","authors":"Payam Rajabi Kalvani, Antonella Parisini, Maura Pavesi, Francesco Mattei, Piero Mazzolini, Kingsley Egbo, Oliver Bierwagen, Abderrahim Moumen, Salvatore Vantaggio, Samaneh Shapouri, Matteo Bosi, Luca Seravalli, Roberto Fornari","doi":"10.1002/aelm.202500072","DOIUrl":"https://doi.org/10.1002/aelm.202500072","url":null,"abstract":"The impact of thermal treatments on the trapping phenomena in (001) Si‐doped κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> epi‐layers, via optical admittance spectroscopy technique, is reported. Two Pt/κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> Schottky contacts are investigated: one made on top of an as‐grown Si‐doped κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer and the other on a thermally treated one. Three different illumination conditions, including monochromatic UV‐C (<jats:italic>λ</jats:italic> = 254 nm), UV‐B (<jats:italic>λ</jats:italic> = 312 nm), and UV‐A (<jats:italic>λ</jats:italic> = 365 nm), are employed for the capacitance–voltage (<jats:italic>C–V</jats:italic>) measurements at different bias and AC frequencies to investigate traps and deep levels in κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>:Si. The net donor density profiles in dark and approximate density of photoionized traps of the as‐grown and thermally treated samples are extracted from the <jats:italic>C–V</jats:italic> curves in the dual‐frequency mode under different illumination conditions. A SnO/κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> p‐n heterojunction, where the κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>:Si layer underwent a double thermal treatment, is also investigated to better understand the relation between thermal treatment and distribution of trap density. The transient photocapacitance and photocurrent measurements are performed under the same illumination conditions to evaluate the response times of traps. This study provides a better understanding of the trapping phenomena in the as‐grown and thermally treated κ‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>:Si epi‐layers, which are important for UV‐C detection applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"46 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144566436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless Technologies for Wearable Electronics: A Review (Adv. Electron. Mater. 10/2025)","authors":"Choong Yeon Kim,&nbsp;Juhyun Lee,&nbsp;Eun Young Jeong,&nbsp;Yeji Jang,&nbsp;Heesoo Kim,&nbsp;Bohyung Choi,&nbsp;Donggi Han,&nbsp;Youngjun Oh,&nbsp;Jae-Woong Jeong","doi":"10.1002/aelm.70022","DOIUrl":"https://doi.org/10.1002/aelm.70022","url":null,"abstract":"<p><b>Advancing Toward Wireless Wearable Electronics</b></p><p>The image illustrates the evolution of wearable electronics from tethered systems to wireless technologies. In article number 2400884, Jae-Woong Jeong and co-workers show that, while once confined to lab equipment, these devices now utilize wireless communication and power solutions for health monitoring and treatment, providing greater mobility and flexibility.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless, Battery-free, Implantable Inductor-Capacitor Based Sensors (Adv. Electron. Mater. 10/2025)","authors":"Baochun Xu,&nbsp;Cunjiang Yu","doi":"10.1002/aelm.70029","DOIUrl":"https://doi.org/10.1002/aelm.70029","url":null,"abstract":"<p><b>Inductor–Capacitor Sensors</b></p><p>Implantable wireless LC sensors enable real-time battery-free monitoring of physiological parameters through resonant frequency shifts detected via magnetic coupling. In article number 2500184, Cunjiang Yu and Baochun Xu present representative applications, such as intracranial pressure, cardiac activity, and gastrointestinal sensing, demonstrating the adaptability of the technology to a broad range of physiological parameters. Compact and biocompatible LC sensors support scalable, minimally invasive systems for next-generation bioelectronic healthcare.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Percolation Effect in Sub-100 Nm Nanograting Structure for High-Performance Bending Insensitive Flexible Pressure Sensor (Adv. Electron. Mater. 10/2025)","authors":"Jae-Soon Yang,&nbsp;Min-Ho Seo,&nbsp;Min-Seung Jo,&nbsp;Kwang-Wook Choi,&nbsp;Jae-Shin Lee,&nbsp;Myung-Kun Chung,&nbsp;Bon-Jae Koo,&nbsp;Jae-Young Yoo,&nbsp;Jun-Bo Yoon","doi":"10.1002/aelm.70023","DOIUrl":"https://doi.org/10.1002/aelm.70023","url":null,"abstract":"<p><b>Flexible Pressure Sensors</b></p><p>In article number 2400980, Jae-Young Yoo, Jun-Bo Yoon, and co-workers develop a high-performance flexible pressure sensor using a sub-100 nm valley nanograting structure to enhance the percolation effect while maintaining bending insensitivity. This sensor reliably detects subtle pressures, such as arterial pulses, even on curved surfaces, making it ideal for wearable healthcare and tactile sensing applications. This cover illustrates the sensor's ability to maintain bending insensitivity while sensitively detecting arterial pulses, suggesting its potential for future applications in plantar pressure mapping.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70023","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Encapsulated Organohydrogel Couplants for Wearable Ultrasounds (Adv. Electron. Mater. 10/2025)","authors":"Xiaoru Dong,&nbsp;Zhi Yang,&nbsp;Chaoran Xu,&nbsp;Jun Zhao,&nbsp;Juntong Zhu,&nbsp;Haokun Yi,&nbsp;Hui Xu,&nbsp;Zhuo Li","doi":"10.1002/aelm.70030","DOIUrl":"https://doi.org/10.1002/aelm.70030","url":null,"abstract":"<p><b>Wearable Ultrasounds</b></p><p>In article number 2400961, Zhuo Li and co-workers present an elastomer-encapsulated organohydrogel couplant designed for long-term wearable ultrasound imaging. By adding an appropriate amount of glycerol and employing elastomer encapsulation, the couplant effectively maintains long-term water retention. Meanwhile, the synergistic combination of glycerol and prefabricated hydrogel templates produces a smooth elastomer–organohydrogel interface, ensuring highly effective long-term ultrasound monitoring.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70030","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetically Compensated Nanometer‐Thin Ga‐Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy","authors":"Carsten Dubs, Oleksii Surzhenko","doi":"10.1002/aelm.202500232","DOIUrl":"https://doi.org/10.1002/aelm.202500232","url":null,"abstract":"Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin‐wave physics and high‐speed magnonic applications. This study reports on key magnetic parameters of nanometer‐thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4π<jats:italic>M</jats:italic><jats:sub>s</jats:sub> below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4π<jats:italic>M</jats:italic><jats:sub>r</jats:sub> and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> are determined and correlated with their Curie temperatures <jats:italic>T</jats:italic><jats:sub>C</jats:sub>. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths Δ<jats:italic>H</jats:italic><jats:sub>FWHM</jats:sub> correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4π<jats:italic>M</jats:italic><jats:sub>eff</jats:sub> and thus enables films with robust PMA. This opens up a new parameter space for the fine‐tuning of potential magnonic spin‐wave devices on commonly used GGG substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers","authors":"Diego R. Hinojosa, Nathan J. Pataki, Francesca Pallini, Guillaume Freychet, Andreas Erhardt, Kevin Schuller, Selina Olthof, Klaus Meerholz, Christopher R. McNeill, Mario Caironi, Florian Günther, Michael Sommer","doi":"10.1002/aelm.202500213","DOIUrl":"https://doi.org/10.1002/aelm.202500213","url":null,"abstract":"Benzodifuranone (BDF)‐isatin‐based conjugated acceptor copolymers with different stereoelectronic properties are designed, guided by density functional theory calculations. <jats:italic>syn</jats:italic>‐ and <jats:italic>anti</jats:italic>‐conformations are predicted to depend on both the presence of chlorine substituents as well as on the steric demand of the comonomer. Backbone torsion decreases with the comonomer of the order thiophene (T) &gt; furan (F) &gt; acetylene (A). Six copolymers of BDF‐isatin with T, F, and A are prepared, referred to as H‐BDF‐T, Cl‐BDF‐T, H‐BDF‐F, Cl‐BDF‐F, H‐BDF‐A, and Cl‐BDF‐A. Electrochemically and spectroscopically determined HOMO and LUMO energy levels align qualitatively and confirm a stabilization of the LUMO of the chlorinated copolymers. The thin film microstructures of H‐BDF‐A and Cl‐BDF‐A, having a linear backbone, are characterized by an edge‐on orientation, while the four remaining copolymers with a more curved backbone predominantly orient face‐on. The non‐chlorinated furan copolymer H‐BDF‐F stands out due to its curved yet coplanar backbone, face‐on orientation, high degree of crystallinity, close <jats:italic>π−π</jats:italic> stacking distance, the highest electrical conductivity of 3 S cm<jats:sup>−1</jats:sup>, the best air stability of electrical conductivity among the series, and an appreciably high power factor. These results demonstrate that theory‐guided design allows for optimizing nonhalogenated n‐type copolymers of low synthetic complexity for thermoelectric applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144547118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Topological Skyrmion‐Based Spin‐Torque‐Diode Effect in Magnetic Tunnel Junctions","authors":"Shuhui Liu, Riccardo Tomasello, Yuxuan Wu, Bin Fang, Aitian Chen, Dongxing Zheng, Baoshun Zhang, Emily Darwin, Hans J. Hug, Mario Carpentieri, Wanjun Jiang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng","doi":"10.1002/aelm.202500130","DOIUrl":"https://doi.org/10.1002/aelm.202500130","url":null,"abstract":"The Internet of Things market's rapid growth is increasing the need for energy‐efficient nanoscale hardware for edge computing and microwave applications. Magnetic tunnel junctions (MTJs), as key components of spintronic microwave technology, offer a promising pathway for compact and high‐performance microwave detectors. Simultaneously, the emerging field of skyrmionics combines concepts from topology and spintronics, opening new avenues for device innovation. This study demonstrates the electrical excitation and detection of skyrmion dynamics using a topological spin‐torque diode (STD) with a nanoscale MTJ on a skyrmionic material at room temperature and for a wide region of applied fields, including the zero‐field case. Quantitative Magnetic Force Microscopy measurements confirm the presence of a single skyrmion in the MTJ‐free layer. Electrical measurements reveal the electrical excitation via spin‐transfer torque (STT) of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics to the breathing mode and highlight the impact of thickness‐dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii–Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone in the development of topological spin microwave devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144546962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Programmable Cryogenic Memory in a Ge/GeSi Heterostructure","authors":"Adelaide Bradicich, Tzu‐Ming Lu","doi":"10.1002/aelm.202500102","DOIUrl":"https://doi.org/10.1002/aelm.202500102","url":null,"abstract":"Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing‐in‐memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field‐effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high‐conductance state. We show that this device can be set to a low‐conductance state by sweeping a negative bias on the device drain, and reset it to its high‐conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 10<jats:sup>3</jats:sup> range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide‐semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group‐IV HFETs to perform as analog cryogenic memory components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"633 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}